JPH01162771A - Heat treatment device - Google Patents
Heat treatment deviceInfo
- Publication number
- JPH01162771A JPH01162771A JP32009787A JP32009787A JPH01162771A JP H01162771 A JPH01162771 A JP H01162771A JP 32009787 A JP32009787 A JP 32009787A JP 32009787 A JP32009787 A JP 32009787A JP H01162771 A JPH01162771 A JP H01162771A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- heat treatment
- wafer
- magnet
- hollow body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 53
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 abstract description 64
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 239000000428 dust Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
熱処理装置の改良に関し、
ウェーハを熱処理装置の真空室に殿入・搬出するにあた
り、擦過にもとづく発塵の生じない熱処理装置を提供す
ることを目的とし、
熱処理領域のみを囲んで加熱手段が設けられ、内部を真
空にし、また、内部に所望のガスを送入しうる流体給送
系を有し、底部が主体部と分離可能である縦型の真空室
と、前記真空室の底部を貫通して前記真空室の軸方向に
伸延し、前記真空室と連通ずる外部中空体と、ウェーハ
受けを支持し、前記外部中空体の内部を上下に移動可能
であり、前記底部と連接する端部とは逆の端部には第１
の磁石が設けられているウェーハ受け支持棒と、前記外
部中空体の外周にそって移動可能であり、前記第１の磁
石を牽引する第２の磁石とをもって構成される。[Detailed Description of the Invention] [Summary] Regarding the improvement of heat treatment equipment, an object of the present invention is to provide a heat treatment equipment that does not generate dust due to abrasion when wafers are transferred into and out of the vacuum chamber of the heat treatment equipment. A vertical vacuum chamber in which a heating means is provided surrounding only the region, the interior is evacuated, and a fluid supply system is provided to feed a desired gas into the interior, and the bottom is separable from the main body. an external hollow body extending through the bottom of the vacuum chamber in the axial direction of the vacuum chamber and communicating with the vacuum chamber; supporting a wafer receiver and movable up and down inside the external hollow body; The end opposite to the end connected to the bottom has a first
A wafer receiving support bar is provided with a magnet, and a second magnet is movable along the outer periphery of the external hollow body and pulls the first magnet.
（産業上の利用分野） 本発明は、熱処理装置の改良に関する。(Industrial application field) The present invention relates to improvements in heat treatment equipment.
半導体装置のゲート？Ｈ極を構成するタングステンある
いはモリブデン等の薄膜の熱処理をなす場合、かかる薄
膜を被着した半導体ウェーハを加熱炉に搬入・搬出する
必要がある。この際に、加熱炉に混入する空気中の酸素
によって半導体ウェーハが酸化されることを防止する方
法として、熱処理完了後、−旦加熱炉を冷却してから、
ウェーハを搬出・搬入し、次に、加熱炉内を真空にした
後、加熱して熱処理する方法があり、広く使用されてい
る。しかし、この方法では、加熱・冷却のための時間が
正味の熱処理時間（所望の熱処理に必要にして十分な時
間）に加算され、生産効率が低下する。その上、上記の
加熱・冷却のための時間にも付加的に熱処理がなされる
結果となり、熱処理制御が容易ではない。この欠点を解
消するため、加熱炉は高温に維持しておき、しかも、半
導体ウェーハの搬出・搬入時に空気が混入せず、その結
果、半導体ウェーへの酸化が起こらないように改良した
第２図に示す熱処理装置が使用されるようになった。Gate of semiconductor device? When heat-treating a thin film of tungsten, molybdenum, or the like constituting the H pole, it is necessary to carry the semiconductor wafer coated with the thin film into and out of a heating furnace. At this time, as a method to prevent the semiconductor wafer from being oxidized by oxygen in the air mixed into the heating furnace, after the heat treatment is completed, the heating furnace is cooled first, and then
There is a widely used method in which the wafer is transported in and out, the inside of the heating furnace is evacuated, and then the wafer is heated and heat treated. However, in this method, the time for heating and cooling is added to the net heat treatment time (the time necessary and sufficient for the desired heat treatment), resulting in a decrease in production efficiency. Moreover, heat treatment is additionally performed during the above-mentioned heating and cooling time, making it difficult to control the heat treatment. In order to eliminate this drawback, the heating furnace is maintained at a high temperature and has been improved to prevent air from entering and exiting the semiconductor wafers, resulting in no oxidation of the semiconductor wafers (see Figure 2). The heat treatment equipment shown in Figure 1 has come into use.
これは、（ａ）中空体よりなり、熱処理領域のみを囲ん
で加熱手段１１が設けられ、一端１２に連通して真空ポ
ンプＰが設けられ、（図に１４をもって示す部材はシー
ル手段である）他端１３はシール手段１４をもって開閉
可能な開口を有する真空室１と、（ｂ）前記シール手段
１４に圧着され前記真空室ｌをシールするシールＭ２６
と、（Ｃ）このシール蓋２６を介して前記真空室１と連
通可能な外部中空体２とを前記真空室１にそって移動可
能にガイドするシール手段用ガイド２］と、（ｄ）前記
外部中空体２中を軸方向に移動可能であり、半導体ウェ
ーハを支持するウェーハ立て２２を前記真空室１に搬入
゛搬出可能であり、前記ウェーハ立て２２と接続される
一端とは逆の一端近傍には第１の磁石２３が設けられて
なるウェーハ立て移動手段２４と、（ｅ）前記外部中空
体２の外周に沿って移動可能であり、前記第１の磁石２
３を牽引する第２の磁石２５とをもって構成される。This consists of (a) a hollow body, a heating means 11 is provided surrounding only the heat treatment area, a vacuum pump P is provided in communication with one end 12, (the member indicated by 14 in the figure is a sealing means); The other end 13 has a vacuum chamber 1 having an opening that can be opened and closed with a sealing means 14, and (b) a seal M26 which is crimped onto the sealing means 14 and seals the vacuum chamber l.
and (C) a sealing means guide 2 that movably guides an external hollow body 2 that can communicate with the vacuum chamber 1 through the seal lid 26 along the vacuum chamber 1], and (d) the A wafer stand 22 that is movable in the axial direction in the external hollow body 2 and supports semiconductor wafers can be carried into and out of the vacuum chamber 1, and near one end opposite to the one end connected to the wafer stand 22. (e) a wafer stand moving means 24 provided with a first magnet 23;
3 and a second magnet 25 that pulls the magnet.
第２の磁石２５を、真空室ｌの方向に移動すると、これ
と吸引しあっている第１の磁石２３は真空室１− の
方向に移動し、第１の磁石２３に支持されているウェー
ハ立て移動手段２４も真空室ｌの方向に移動する。この
動作により、ウェーハ立て２２は真空室１の非加熱領域
にセットされる。この時点では真空室１はまだシールさ
れておらず、その中には酸素は存在するが、真空室１の
非加熱領域の温度は低いので半導体ウェーハが酸化され
ることいはない。When the second magnet 25 is moved in the direction of the vacuum chamber 1, the first magnet 23, which is attracted to it, moves in the direction of the vacuum chamber 1-, and the wafer supported by the first magnet 23 is moved in the direction of the vacuum chamber 1-. The vertical moving means 24 also moves in the direction of the vacuum chamber l. By this operation, the wafer stand 22 is set in the non-heated area of the vacuum chamber 1. At this point, the vacuum chamber 1 is not yet sealed, and although oxygen exists therein, the semiconductor wafer will not be oxidized because the temperature in the unheated region of the vacuum chamber 1 is low.
シール蓋２６を有する外部中空体２を真空室ｌの方向に
移動し、シール手段１４とシール蓋２６とを圧着するこ
とによって真空室１と外部中空体２とを密閉状態にする
。The external hollow body 2 having the sealing lid 26 is moved toward the vacuum chamber 1, and the sealing means 14 and the sealing lid 26 are pressed together, thereby bringing the vacuum chamber 1 and the external hollow body 2 into a sealed state.
真空室１と外部中空体２との内部を真空にし、酸素が存
在しない状態にした後、第２の磁石２５を更に真空室１
の方向に移動することによって、上記と同様の作動原理
にもとづき、ウェーハ立て移動手段２４を真空室１の方
向に移動し、ウェーハ立て２２を加熱領域にセットし、
酸素の無い状態において熱処理を行う。After the inside of the vacuum chamber 1 and the external hollow body 2 are evacuated and oxygen is not present, the second magnet 25 is further inserted into the vacuum chamber 1.
Based on the same operating principle as described above, the wafer stand moving means 24 is moved in the direction of the vacuum chamber 1, and the wafer stand 22 is set in the heating area.
Heat treatment is performed in the absence of oxygen.
従来技術に係る熱処理装置の詳細構造には、上記の他に
いろいろありうるが、いづれにせよ、真空室には石英管
が主として使用されており、ウェーハ立て等ウェーハ支
持手段をウェーハ立て移動手段等によって真空室に搬入
・搬出するにあたり、ウェーハ支持手段と真空室との擦
過にもとづく発塵の可能性が否定し難く、真空室の排気
にあたり、これが半導体ウェーハに付着する可能性があ
る。There are various detailed structures of conventional heat treatment equipment other than those described above, but in any case, a quartz tube is mainly used in the vacuum chamber, and wafer support means such as a wafer stand is used as a wafer stand moving means etc. When carrying the wafer into and out of the vacuum chamber, it is difficult to deny the possibility of dust generation due to friction between the wafer support means and the vacuum chamber, and this may adhere to the semiconductor wafer when the vacuum chamber is evacuated.
本発明の目的は、この欠点を解消することにあり、半導
体ウェーハを熱処理装置の真空室に搬入・搬出するにあ
たり、半導体支持手段と真空室壁とのＦ！Ｉ過にもとづ
く発塵が生じないように改良された熱処理装置を提供す
ることにある。An object of the present invention is to eliminate this drawback, and when carrying a semiconductor wafer into and out of a vacuum chamber of a heat treatment apparatus, the F! An object of the present invention is to provide an improved heat treatment apparatus that prevents generation of dust due to excess heat.
上記の目的は、（ａ）熱処理ｗＩ域のみを囲んで加熱手
段（３４）が設けられ、内部を真空にし、また、内部に
所望のガスを送入しうる流体給送系（３１）を有し、底
部（３２）が主体部（３３）と分離可能であり、前記主
体部（３３）と底部（３２）との間には冷却部（３５）
が介在する縦型の真空室（３）と、（ｂ）前記真空室（
３）の底部（３２）を貫通して前記真空室（３）の軸方
向に伸延し、前記真空室（３）と連通ずる外部中空体（
４）と、（ｃ）ウェーハ受け（５）を支持し、前記外部
中空体（４）の内部を上下に移動可能であり、前記底部
（３２）と連接する端部（３６）とは逆の端部（３７）
には第１の磁石（４１）が設けられているウェーハ受け
支持棒（４３）と、（ｄ）前記外部中空体（４）の外周
にそって移動可能であり、前記第１の磁石（４１）を牽
引する第２の磁石（４２）とを具備してなる縦型構造の
熱処理装置によって達成される。The above objects are as follows: (a) A heating means (34) is provided surrounding only the heat treatment wI region, the interior is evacuated, and the fluid supply system (31) is capable of feeding a desired gas into the interior. The bottom part (32) is separable from the main part (33), and a cooling part (35) is provided between the main part (33) and the bottom part (32).
(b) a vertical vacuum chamber (3) in which the vacuum chamber (
an external hollow body (3) extending in the axial direction of said vacuum chamber (3) through the bottom (32) of said vacuum chamber (3) and communicating with said vacuum chamber (3);
4), and (c) supporting the wafer receiver (5), movable up and down inside the external hollow body (4), and opposite to the end (36) that communicates with the bottom (32). End (37)
(d) a wafer receiving support bar (43) provided with a first magnet (41); (d) movable along the outer periphery of the external hollow body (4); ) and a second magnet (42) that pulls the magnet (42).
上記縦型構造の熱処理装置ににおいて、前記主体部（３
３）と底部（３２）との間に冷却部（３５）を介在する
と、半導体ウェーハの酸化防止効果はさらに向上する。In the heat treatment apparatus having a vertical structure, the main body portion (3
3) and the bottom (32), the effect of preventing oxidation of the semiconductor wafer is further improved.
ウェーハ受け５はウェーハ受け支持棒４３を介して磁石
４１．４２間の吸引力を利用した非接触的手段によって
上下に移動するので、ウェーハ受け５を真空室３に搬入
・搬出するにあたり、ウェーハ受け５が真空室３と接触
することがなく、したがって、擦過にもとづく発塵の可
能性は全くなく、発塵粒子がウェーハに付着する危険性
はない。The wafer receiver 5 is moved up and down by non-contact means using the attraction between the magnets 41 and 42 via the wafer receiver support rod 43, so when carrying the wafer receiver 5 into and out of the vacuum chamber 3, 5 does not come into contact with the vacuum chamber 3, so there is no possibility of dust generation due to abrasion, and there is no risk of dust particles adhering to the wafer.
以下、図面を参照しつ一１本発明の一実施例（特許請求
の範囲第２項に相当する）に係る熱処理装置について説
明する。Hereinafter, a heat treatment apparatus according to an embodiment of the present invention (corresponding to claim 2) will be described with reference to the drawings.
第１ａ図参照
３は継型の真空室であり、その熱処理領域のみを囲んで
加熱手段３４が設けられ、内部を真空にし、また、内部
に所望のガスを送入しうる流体給送系３１を有し、底部
３２が主体部３３と分離可能となっている。Reference numeral 3 in FIG. 1a is a joint-type vacuum chamber, in which a heating means 34 is provided surrounding only the heat treatment area, and a fluid supply system 31 that can evacuate the interior and feed a desired gas into the interior. The bottom portion 32 is separable from the main portion 33.
４は外部中空体であり、前記真空室３の底部３２を貫通
して前記真空室３の軸方向に伸延し、前記真空室３と連
通している。Reference numeral 4 denotes an external hollow body, which extends through the bottom 32 of the vacuum chamber 3 in the axial direction of the vacuum chamber 3 and communicates with the vacuum chamber 3 .
４３はウェーハ受け支持棒であり、ウェーハ受け５を支
持し、前記外部中空体４の内部を上下に移動可能であり
、前記底部３２と連接する端部３６とは逆の端部３７に
は第１の磁石４１が設けられている。Reference numeral 43 denotes a wafer receiver support rod, which supports the wafer receiver 5 and is movable up and down inside the external hollow body 4, and has an end 37 opposite to the end 36 connected to the bottom 32. One magnet 41 is provided.
４１は第２の磁石であり、この縦型構造の熱処理装置の
軸方向に延在するステム６によって、上下方向に移動可
能に支持され、その結果、前記外部中空体４の外周にそ
って移動可能であり、前記第１の磁石４１を牽引する。A second magnet 41 is supported by a stem 6 extending in the axial direction of this vertically structured heat treatment apparatus so as to be movable in the vertical direction, and as a result, it moves along the outer periphery of the external hollow body 4. It is possible to pull the first magnet 41.
上記の熱処理装置を使用するにあたっては、底部３２を
主体部３３から分離しておいた状態で、半導体ウェーハ
をウェーハ受け５にセントし、第２のｔｉ石４２を外部
中空体４に沿って上方に移動することによって、第１の
磁石４１を上方に牽引し、第１の磁石４１に支持されて
いるウェーハ受け支持棒４３を上方に移動し、ウェーハ
がセットされたウェーハ受け５を真空室３の冷却部にセ
ットする。When using the above heat treatment apparatus, the semiconductor wafer is placed in the wafer receiver 5 with the bottom part 32 separated from the main part 33, and the second Ti stone 42 is placed upward along the external hollow body 4. , the first magnet 41 is pulled upward, the wafer receiver support rod 43 supported by the first magnet 41 is moved upward, and the wafer receiver 5 on which the wafer is set is moved to the vacuum chamber 3. Set it in the cooling section.
底部３２を上方に移動し、主体部３３に圧着して真空室
３をシールし、流体給送系３１を使用して真空室３の内
圧を１０−’Ｔｏｒｒ程度の真空とし、場合によっては
窒素ガスあるいはアルゴンガス等の不活性ガスを封入す
る。The bottom part 32 is moved upward and crimped to the main body part 33 to seal the vacuum chamber 3, and the internal pressure of the vacuum chamber 3 is reduced to about 10-' Torr using the fluid supply system 31. Fill with gas or inert gas such as argon gas.
第１ｂ図参照
第２の磁石４２を更に上方に移動することによって、ウ
ェーハ受け支持棒４３上にセントされているウェーハ受
け５を高温部にセットし、熱処理を行う。By moving the second magnet 42 further upward (see FIG. 1b), the wafer receiver 5 placed on the wafer receiver support rod 43 is set in a high temperature section and heat treatment is performed.
第１ａ図再参照
熱処理に必要な所定の加熱時間が経過した後、前記とは
逆の操作によって半導体ウェーハを冷却部３５へ移動し
、冷却の後、流体給送系３１を介して真空室１内を大気
圧に戻し、底部３２を下方に移動し、第２の磁石４２を
下方に移動することによって、ウェーハ受け支持棒４３
上にセットされているウェーハ受け５を真空室１の外に
取り出し、半導体ウェーハを搬出する。Refer back to FIG. 1a After the predetermined heating time necessary for the heat treatment has elapsed, the semiconductor wafer is moved to the cooling section 35 by the operation opposite to the above, and after cooling, it is transferred to the vacuum chamber 1 through the fluid supply system 31. By returning the interior to atmospheric pressure, moving the bottom part 32 downward, and moving the second magnet 42 downward, the wafer receiving support rod 43
The wafer receiver 5 set above is taken out of the vacuum chamber 1, and the semiconductor wafer is carried out.
なお、上記工程において、ウェーハを高温部３３にセッ
トした後、ＣＶＤ処理、例えばシランを供給して多結晶
シリコンを成長するＣＶＤ処理、あるいは、シランとア
ンモニアを供給して窒化シリコンを成長するＣＶＤ処理
等も可能である。In the above process, after setting the wafer in the high temperature section 33, a CVD process is performed, for example, a CVD process in which silane is supplied to grow polycrystalline silicon, or a CVD process in which silane and ammonia are supplied to grow silicon nitride. etc. are also possible.
上記熱処理工程において、底部３２を上下に移動せず固
定しておき、主体部３３を上下に移動しても同一の効果
が得られる。In the heat treatment step, the same effect can be obtained even if the bottom portion 32 is fixed without moving up and down and the main body portion 33 is moved up and down.
なお、本例においては、主体部３３と底部３２との間に
冷却部３５が設けられているが、これは１例であり、冷
却部３５を設けることは必須ではない。Note that in this example, the cooling part 35 is provided between the main body part 33 and the bottom part 32, but this is just one example, and providing the cooling part 35 is not essential.
〔発明の効果］
以上説明せるとおり、本発明に係る熱処理装置において
は、縦型構造よりなり、ウェーハ受けを支持するウェー
ハ受け支持棒を磁石による非接触手段によって上下に移
動するので、ウェーハをウェーハ受けにセットして熱処
理装置の真空室に搬入・搬出するにあたり、ウェーハ受
けと真空室とは接触せず、したがって、擦過にもとづく
発塵が生じない。[Effects of the Invention] As explained above, the heat treatment apparatus according to the present invention has a vertical structure, and the wafer receiver support rod that supports the wafer receiver is moved up and down by non-contact means using magnets, so that the wafer is When the wafer is set on a receiver and carried into and out of the vacuum chamber of a heat treatment apparatus, the wafer receiver and the vacuum chamber do not come into contact with each other, and therefore, no dust is generated due to abrasion.
第１ａ、ｌｂ図は、本発明の一実施例に係る熱処理装置
の断面図である。
第２図は、従来技術に係る熱処理装置の断面図である。
１・・・真空室、
１１・・・加熱手段、
１２・・・端部、
１３・・・端部、
１４・・・シール手段、
２・・・外部中空体、
２］・・・シール手段用ガイド、
２２・・・ウェーハ立て、
２３・・・第１の磁石、
２４・・・ウェーハ立て移動手段、
２５・・・第２の磁石、
２６・・・蓋、
３・・・真空室、
３１・・・流体給送系、
３２・・・底部、
３３・・・主体部、
３４・・・加熱手段、
３５・・・冷却部、
３６・・・端部、
３７・・・端部、
４・・・外部中空体、
４１・・・第１の磁石、
４２・・・第２のｒｉ石、
４３・・・ウェーハ受け支持棒、
５・・・ウェーハ受け、
６・・・ステム、
Ｐ・・・真空ポンプ。Figures 1a and 1b are cross-sectional views of a heat treatment apparatus according to an embodiment of the present invention. FIG. 2 is a sectional view of a heat treatment apparatus according to the prior art. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 11... Heating means, 12... End part, 13... End part, 14... Seal means, 2... External hollow body, 2]... Seal means 22... Wafer stand, 23... First magnet, 24... Wafer stand moving means, 25... Second magnet, 26... Lid, 3... Vacuum chamber, 31... Fluid feeding system, 32... Bottom part, 33... Main body part, 34... Heating means, 35... Cooling part, 36... End part, 37... End part, 4... External hollow body, 41... First magnet, 42... Second rivet stone, 43... Wafer receiver support rod, 5... Wafer receiver, 6... Stem, P ···Vacuum pump.
Claims (1)
られ、内部を真空にし、また、内部に所望のガスを送入
しうる流体給送系（３１）を有し、底部（３２）が主体
部（３３）と分離可能である縦型の真空室（３）と、 前記真空室（３）の底部（３２）を貫通して前記真空室
（３）の軸方向に伸延し、前記真空室（３）と連通する
外部中空体（４）と、 ウェーハ受け（５）を支持し、前記外部中空体（４）の
内部を上下に移動可能であり、前記底部（３２）と連接
する端部（３６）とは逆の端部（３７）には第１の磁石
（４１）が設けられているウェーハ受け支持棒（４３）
と、 前記外部中空体（４）の外周にそって移動可能であり、
前記第１の磁石（４１）を牽引する第２の磁石（４２）
と、 を具備してなることを特徴とする熱処理装置。 ［２］前記真空室（３）の主体部（３３）と底部（３２
）との間には冷却部（３５）が介在してなることを特徴
とする特許請求の範囲第１項記載の熱処理装置。[Scope of Claims] [1] A heating means (34) is provided surrounding only the heat treatment area, and has a fluid supply system (31) capable of evacuating the inside and feeding a desired gas into the inside. a vertical vacuum chamber (3) whose bottom (32) is separable from the main body (33); and an axis of the vacuum chamber (3) passing through the bottom (32) of the vacuum chamber (3). an external hollow body (4) extending in the direction and communicating with the vacuum chamber (3); supporting a wafer receiver (5) and movable up and down inside the external hollow body (4); A wafer receiving support rod (43) with a first magnet (41) provided at an end (37) opposite to the end (36) connected to (32)
and movable along the outer periphery of the external hollow body (4);
A second magnet (42) that pulls the first magnet (41)
A heat treatment apparatus comprising: and. [2] The main part (33) and the bottom part (32) of the vacuum chamber (3)
) A heat treatment apparatus according to claim 1, characterized in that a cooling section (35) is interposed between the heat treatment apparatus and the heat treatment apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62320097A JP2584643B2 (en) | 1987-12-19 | 1987-12-19 | Heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62320097A JP2584643B2 (en) | 1987-12-19 | 1987-12-19 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01162771A true JPH01162771A (en) | 1989-06-27 |
| JP2584643B2 JP2584643B2 (en) | 1997-02-26 |
Family
ID=18117680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62320097A Expired - Lifetime JP2584643B2 (en) | 1987-12-19 | 1987-12-19 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584643B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011040636A (en) * | 2009-08-13 | 2011-02-24 | Tokyo Electron Ltd | Gas port structure and processing apparatus |
-
1987
- 1987-12-19 JP JP62320097A patent/JP2584643B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011040636A (en) * | 2009-08-13 | 2011-02-24 | Tokyo Electron Ltd | Gas port structure and processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2584643B2 (en) | 1997-02-26 |
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