JPH01161732A - Resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a passivation film from cracking due to thermal stress and metal wirings from deforming without altering the width of metal wirings and to supply a large current by forming a predetermined number of grooves on an insulating film, and forming metal wirings having a wide width on the film including the groove. CONSTITUTION:In a semiconductor device in which metal wirings 3 having wide width is formed through an insulating film 2 on a semiconductor substrate 1, a passivation film 4 is further formed on the wirings 3 and the overall is sealed with resin 5, a predetermined number of grooves 2a are formed on the film 2, and the wide wirings 3 are formed on the film 2 including the grooves 2a. For example, an oxide film 2 is formed on the substrate 1, two grooves 2a are formed on the film 2, the wide wirings 3 are formed on the film 2 including the groove 2a, and the surface is covered with the film 4. Thus, it can prevent the passivation film from cracking due to a stress from the sealing resin or the metal wirings from deforming.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a resin-sealed semiconductor device that prevents cracks in a passivation film, which is a protective film, and deformation of metal wiring protected by this badge-vagelon film. It is related to.

[Conventional technology]

FIG. 2 is a cross-sectional view showing a conventional resin-sealed semiconductor device.
An oxide film 2, which is an insulating film, is formed in a planar manner on a semiconductor substrate 1, a metal wiring 3 for circuit wiring in the device is formed on this oxide film 2, and moisture is removed from the surface of the metal wiring 3. After the badge-containing film 4 for preventing the infiltration of impurities is provided, the device is sealed with a sealing resin 5. In the wiring within the device that supplies large current to the metal wiring 3, it is necessary to reduce the current density in order to prevent defects caused by this large current, and for this purpose it is necessary to provide a wiring layer with a wide area, and A wide metal wiring 3 was required.

[Problem that the invention seeks to solve]

Since the conventional resin-sealed semiconductor device is configured as described above, thermal expansion of the sealing resin 5, which is the package material, due to thermal stress such as low-temperature and high-temperature cycles,
There is a problem in that the stress caused by shrinkage causes cracks in the badge-container film 4 and deformation of the metal wiring 3, and this is noticeable when a wide wiring layer is formed around the semiconductor substrate.

This invention was made in order to solve the above-mentioned problems, and it prevents cracks in the passivation film and deformation of the metal wiring due to thermal stress without changing the width of the metal wiring, and also prevents the metal wiring from being deformed due to thermal stress. The purpose of this invention is to obtain a resin-sealed semiconductor device that can be supplied.

[Means for solving problems]

In the resin-sealed semiconductor device according to the present invention, a required number of concave grooves are formed in an insulating film formed on a semiconductor substrate, and a wide metal wiring is formed on the insulating film including the concave grooves. It is something.

(Function) In the semiconductor device of the present invention, a concave groove is formed in an insulating film, and a metal wiring is formed on the insulating film including the concave groove, so that the metal wiring and the passivation film on the insulating film have a concave-convex structure. Therefore, stress applied to the passivation film and metal wiring is dispersed, and cranking of the passivation film and deformation of the metal wiring are prevented.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

As shown in FIG. 1, an oxide film (insulating film) 2 is formed on a semiconductor substrate 1, and a required number of concave grooves 2a, for example two, are formed in this oxide film 2. Oxide film 2 containing
A metal wiring 3 is formed thereon and covered with a passivation film 4 to protect the surface of the metal wiring 3.

As a result, even when a metal wiring 3 with a wide area is provided along the periphery of the substrate to supply a large current, the stress from the sealing resin 5 applied to the passivation film 4 due to thermal stress is dispersed, and the passivation film 4 cracks and
Deformation of the metal wiring 3 can be prevented.

(Effects of the Invention) As explained above, the present invention forms a required number of concave grooves on an insulating film formed on a semiconductor substrate, and places the wide metal on the insulating film including the concave grooves. Since the wiring is formed, the stress from the sealing resin will not cause cracks in the passivation film or deformation of the metal wiring, and a highly reliable semiconductor device can be obtained by simply changing the mask pattern. There is.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a semiconductor device showing an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor device. In the figure, 1 is a semiconductor substrate, 2 is an oxide film, 2a is a concave groove, 3 is a metal wiring, 4 is a passivation film, and 5 is a sealing resin. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Procedure amendment (voluntary) Showa Ma September 6 1, case description Patent application 1986-: (22174 No. 2)
・Invention) Name Resin-encapsulated semiconductor device 3, Person making the amendment Representative Moriya Shiki Mitsubishi Electric Corporation (Contact information: 03 (213) 3421 Patent Department) 5, Claims of the specification to be amended Column and Detailed Description of the Invention, Column 6, Contents of Amendment (1) The claims of the specification are amended as shown in the attached sheet. (2) Insert [[Industrial Application Field]] between lines 12 and 13 on page 1 of the specification. (3) Also on page 1, line 13, “[Industrial application field]”
Delete. (4) Same (correct the word "passivation film" in lines 14-15 of page 1 to "passivation film". (5) Delete "the above" in line 16 of page 4. A wide metal wafer is formed on the semiconductor substrate via an insulating film, and a sintering layer is formed on the metal wiring, and the entire semiconductor is encapsulated in an insulating material. In the resin-sealed semiconductor device, a required number of concave grooves are formed on the insulating film, and the wide metal wiring is formed on the insulation III including the concave grooves. .

Claims (1)

[Claims] In a semiconductor device in which a wide metal wiring is formed on a semiconductor substrate via an insulating film, passivation is further formed on the metal wiring, and the whole is sealed with resin.
A resin-sealed semiconductor device characterized in that a required number of concave grooves are formed on the insulating film, and the wide metal wiring is formed on the insulating film including the concave grooves.