JPH01161065A - Silica and its production - Google Patents
Silica and its productionInfo
- Publication number
- JPH01161065A JPH01161065A JP31861087A JP31861087A JPH01161065A JP H01161065 A JPH01161065 A JP H01161065A JP 31861087 A JP31861087 A JP 31861087A JP 31861087 A JP31861087 A JP 31861087A JP H01161065 A JPH01161065 A JP H01161065A
- Authority
- JP
- Japan
- Prior art keywords
- silica
- particle size
- primary particle
- metal oxide
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 160
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000011164 primary particle Substances 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 239000008393 encapsulating agent Substances 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 abstract description 16
- 239000011347 resin Substances 0.000 abstract description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000465 moulding Methods 0.000 abstract description 4
- 239000003566 sealing material Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000945 filler Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 abstract 1
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 230000003301 hydrolyzing effect Effects 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000007751 thermal spraying Methods 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910001922 gold oxide Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000012255 powdered metal Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、特に半導体封止材用に適したシリカに力し、
詳しくは樹脂を用いる半導体封止材の充填拐として、該
樹脂系封止材における成形性の向上を目的とするシリカ
およびその製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention focuses on silica particularly suitable for semiconductor encapsulant,
Specifically, the present invention relates to silica and a method for producing the same, which is used to improve the moldability of a resin-based encapsulating material as a filler for a semiconductor encapsulating material using a resin.
従来、ダイオード、トランジスター、工Ｃ１ＬＳＩなど
の半導体素子を封止するために、例えばエポキシ樹脂、
シリコーン樹脂などが用いられ、また該樹脂の充埃材と
して粒子径が一般に１〜１５０μｍである粒状のシリカ
が用いられている。このような半導体封止材用の充填材
シリカ（以下、単に半導体封止材用シリカともいう）は
、一般に高熱伝導性、低熱ｒｋ張性の特長を有する結晶
質石英、溶融シリカなどが用いられ、特に礫石を高湿溶
融したシリカを粉砕した粒状物が多く用いられている。Conventionally, in order to seal semiconductor elements such as diodes, transistors, and C1LSIs, epoxy resins,
A silicone resin or the like is used, and granular silica having a particle size of generally 1 to 150 μm is used as a dust filling material for the resin. As filler silica for semiconductor encapsulants (hereinafter also simply referred to as silica for semiconductor encapsulants), crystalline quartz, fused silica, etc., which have the features of high thermal conductivity and low thermal rk tension, are generally used. In particular, granules made of pulverized silica obtained by high-humidity melting of gravel are often used.
さらに近年、半導体の高度集積化にともないＸ線による
ソフトエラーの問題が生じるため、特にウラン含有料の
少ない高純度の半導体封止材用シリカが望まれている。Furthermore, in recent years, as semiconductors have become more highly integrated, the problem of soft errors caused by X-rays has arisen, so there is a particular desire for high-purity silica for semiconductor encapsulants containing less uranium.
したがって、このような高純度の半導体封止材用シリカ
を得るために、例えば低ウラン含有水晶、高純度の５１
０１４ｓｓ１（ＯＲ）４などを原料として合成した低ウ
ラン含有の溶融シリ、力を粉砕する方法、および珪砂。Therefore, in order to obtain such high purity silica for semiconductor encapsulant, for example, low uranium-containing quartz crystal, high purity 51
Low uranium-containing fused silica synthesized from 014ss1(OR)4 etc., a method of crushing force, and silica sand.
水晶、溶融シリカの粉砕粒子あるいは１ｌｌｉ０７４
。Quartz crystal, fused silica crushed particles or 1lli074
.
５ｉ（ｏｎ）４から合成した微粉状シリカをバーナーに
より溶射して球状化する方法が提案されている。A method has been proposed in which finely powdered silica synthesized from 5i(on)4 is thermally sprayed using a burner to make it spheroidal.
しかしながら、上記したような従来の方法により得られ
た半導体封止材用シリカは、樹脂に添加して成形する場
合に、金型より該樹脂が流出して、−わゆるパリの発生
を招く問題があった。また、かかる樹脂の成形における
パリの発生を改善する場合には、流動性が悪化するとい
う患循環を伴う。したがって、従来の半導体封止材用シ
ソ力における成形性の向上を図るために、粒子径１〜１
５０μｍの粒度分布を種々に調整する対策も施されてき
たが、なお十分に満足されない面があった。However, when the silica for semiconductor encapsulant obtained by the conventional method as described above is added to a resin and molded, the resin flows out from the mold, resulting in the problem of causing so-called paris. was there. Furthermore, in order to improve the occurrence of flakes during molding of such resins, fluidity deteriorates, which is a problem. Therefore, in order to improve the moldability under the conventional perforation force for semiconductor encapsulants, the particle size of 1 to 1
Although various measures have been taken to adjust the particle size distribution of 50 μm, there are still aspects that are not fully satisfied.
本発明者らは、上記した特に半導体封止材用シリカの問
題点を解消すべく鋭意研究を重ねた。The present inventors have conducted extensive research in order to solve the above-mentioned problems, especially with silica for semiconductor sealing materials.
その結果、従来の半導体封止材用シリカに１次粒子の粒
子径（以下、単に１次粒子径ともいう）が０．１μｍ以
下である微粉状のシリカを少量混合させて充填した樹脂
組成物は、その成形性が意外にも著しく改善されること
を見出し、本発明を提案するに至ったものである。即ち
、本発明は１次粒子径が０．１μｍ以下である微粉状の
金属酸化物を１〜５重量％の割合で含有するシリカであ
る。As a result, we created a resin composition filled with conventional silica for semiconductor encapsulant mixed with a small amount of finely powdered silica whose primary particle diameter (hereinafter also simply referred to as primary particle diameter) is 0.1 μm or less. discovered that its moldability was surprisingly significantly improved, and came to propose the present invention. That is, the present invention is a silica containing 1 to 5% by weight of a finely divided metal oxide having a primary particle size of 0.1 μm or less.
本発明のシリカは１次粒子径が０，１μｍ以下。The silica of the present invention has a primary particle diameter of 0.1 μm or less.
一般に０．０５〜０．００５μｍである微粉状の金属酸
化物を一般に１〜５重ｉｔ％、好ましくは１〜３重量％
の割合で含有することが極めて重要であり１該シリカを
エポキシ樹脂など半導体素材の封止材に充填した場合に
、従来の半導体封止材用シリカに比べてパリの発生を伴
わない成形性の良好な向上が達成され、流動性の悪化も
殆んど紹められない。Generally 1 to 5 weight %, preferably 1 to 3 weight % of fine powder metal oxide, which is generally 0.05 to 0.005 μm.
It is extremely important to contain the silica in a proportion of A good improvement is achieved and hardly any deterioration in flowability is introduced.
このような本発明のシリカは、従来の半導体封止材用シ
リカの製造において、粉砕手段により特定された粒子径
のシリカを所定の割合に微Ｍ整することによりて得るこ
とも可能である。Such silica of the present invention can also be obtained by finely grinding silica having a specified particle size to a predetermined ratio using a crushing means in the production of conventional silica for semiconductor encapsulant.
しかしながら、従来の半導体封止材用シリカの製造にお
りて、通常の粉砕手段により０１μｍ以下の微粉状シリ
カを１〜５重針％の範囲に微調整することは煩雑で困難
である。したがって、本発明のシリカは、一般に従来の
粒子径が通常の１〜１５０μｍ、特に１〜１００μｍで
ある半導体封止材用粒状シリカに、上記した１次粒子径
が０．１μｍ以下である微粉状の金Ｍ酸化物を混合する
方法によって簡便に得ることが出来る。However, in the conventional production of silica for semiconductor encapsulant materials, it is complicated and difficult to finely adjust finely powdered silica with a diameter of 01 μm or less to a range of 1 to 5 needle % using normal pulverization means. Therefore, the silica of the present invention is generally a fine powder having a primary particle size of 0.1 μm or less, in addition to the conventional granular silica for semiconductor encapsulant having a particle size of 1 to 150 μm, particularly 1 to 100 μm. It can be easily obtained by mixing gold M oxide.
本発明の上記し之１次粒子径が０．１μｍ以下である微
粉状の金ＦＡ酸化物としては、例えば、シリカ、アルミ
ナ、チタニアなど公知のものが特に制限なく用いられる
が、一般に微粉状の非晶質シリカが好ましく用いられる
。このような１次粒径が０．１μｍ以下である微粉状シ
リカは、温下に燃焼し加水分解させる乾式法、珪砂をコ
ークスとアーク炉中で加熱、還元して発生するＳｉＯ蒸
気を空気中で酸化させる方法、前記した如き溶射法によ
るシリカの製法において、例えば石英、ガラスを加熱し
て表面から蒸発するＳｉＯ、５ｉ０２ガスを凝縮して副
生ずる方法、あるいは珪戯ソーダを鉱版と水溶液中で反
応させる湿式法などにより得ることが出来る。As the above-mentioned fine powder gold FA oxide of the present invention having a primary particle size of 0.1 μm or less, known ones such as silica, alumina, titania, etc. can be used without particular restriction, but generally fine powder Amorphous silica is preferably used. Such fine powder silica with a primary particle size of 0.1 μm or less can be produced using a dry process in which it is burned and hydrolyzed at a high temperature, or by heating and reducing silica sand with coke in an arc furnace, and releasing SiO vapor in the air. In the method of manufacturing silica using the thermal spraying method described above, for example, a method of heating quartz or glass and condensing SiO gas that evaporates from the surface and producing a by-product, or a method of oxidizing silica soda in a mineral plate and an aqueous solution. It can be obtained by a wet method such as reacting with
本発明において、１次粒子径が０．１μｍ以下である微
粉状の金属酸化物１〜５重量％を含有する主たるシリカ
９５〜９９１Ｒｆｆｉ％は、粒子径が１〜１２５μｍ、
特に３〜１００μｍである例えば従来公知の半導体封止
材用粒状シリカである。In the present invention, the main silica 95-991Rffi% containing 1-5% by weight of a fine powder metal oxide with a primary particle size of 0.1 μm or less has a particle size of 1-125 μm,
In particular, it is 3 to 100 μm, such as conventionally known granular silica for semiconductor encapsulant.
このような従来公知の半導体封止材用粒状シリカは、前
記した如く、例えば電気炉溶融法、火炎溶融法あるいは
気相合成法で得意溶融石英を所定の粒度に粉砕する方法
、またはバーナーを用いる溶射法により球状のシリカを
製造する方法などにより、得ることが出来る。特に後者
の溶射法により得られる粒子径が１〜１５０μｍである
球状シリカは、球状であるための形状的および表面的特
性により半導体封止材用シリカとして用いた場合にパリ
の発生が多い。したがって、このような従来の半導体封
止材粒状シリカに対しては、特に本発明の１次粒子径が
０．１μｍ以下である微粉状シワ力を１〜５重量％の割
合で混合させる方法が極めて有効である。Such conventionally known granular silica for semiconductor encapsulant materials can be produced by, for example, pulverizing fused silica to a predetermined particle size by electric furnace melting, flame melting, or vapor phase synthesis, or by using a burner. It can be obtained by a method such as producing spherical silica using a thermal spraying method. Particularly, spherical silica having a particle size of 1 to 150 μm obtained by the latter thermal spraying method is likely to generate a lot of flakes when used as silica for semiconductor encapsulant due to its spherical shape and surface characteristics. Therefore, for such conventional semiconductor encapsulant granular silica, there is a method in which 1 to 5% by weight of the present invention's fine powder wrinkling force having a primary particle size of 0.1 μm or less is mixed. Extremely effective.
本発明において、上記した如き従来の半導体封止材用粒
状シリカに１次粒子径が１μｍ以下である微粉状の金属
酸化物を混合させる方法は特に制限されず、従来公知で
ある粉粒状体の混合手段および装置をそのまま採用する
ことが出来る。しかして、本発明のシリカにおいては、
前記したように１次粒径が０１μｍ以下である微粉状の
金包酸化物を１〜５重量％の割合で混合、含有させるこ
とが極めて重要である。即ち１次粒子径が０．１μｍ以
下である微粉状の金用酸化物が１重ｈ１％より少ないシ
リカでは、該シリカを充填した樹脂組成物の成形におい
てパリの発生を伴ない成形性の向上が殆んど達成されな
い。また、１次粒子径が０．１μｍ以下である微粉状の
金属酸化物か５重量％より多−シリカでは、該シリカに
増粘作用が発現するため、樹脂に充填した場合に流動性
の悪化を招く。In the present invention, there is no particular restriction on the method of mixing a finely powdered metal oxide having a primary particle size of 1 μm or less with the conventional granular silica for semiconductor encapsulant as described above, and the method of mixing a finely powdered metal oxide having a primary particle size of 1 μm or less is not particularly limited. The mixing means and equipment can be employed as they are. However, in the silica of the present invention,
As mentioned above, it is extremely important to mix and contain 1 to 5% by weight of finely powdered gold oxide having a primary particle size of 01 μm or less. In other words, silica containing less than 1% by weight of fine gold oxide with a primary particle size of 0.1 μm or less improves moldability without causing flakes when molding a resin composition filled with the silica. is almost never achieved. In addition, if a fine powder metal oxide with a primary particle size of 0.1 μm or less or a silica containing more than 5% by weight is used, the silica exhibits a thickening effect, resulting in poor fluidity when filled in a resin. invite.
本発明の特定したシリカが樹脂に充填された場合に良好
な成形性を発揮する作用機構については次の如く推測す
る。即ち、（１）樹脂組成物において、１次粒子径が０
．１μｍ以下である微粉状の金属酸化物が改質材として
均一に溶は込み該樹脂組成物自体のレオロジー特性が改
質される。 （２）１次粒子径０．１μ攬以下である微
粉状の金に４酸化物が、粒子径が１μｍ以上である粒状
シリカの表面との相互作用により従来の半導体封圧材用
粒状シリカに比べて、該０．１μｍ以上の粒状シリカと
樹脂との接着力が増大し、金型より樹脂の流出が防止さ
れ、パリの発生を伴わない。 （３）１次粒子径が０１
μｍ以下である微粉状の金ｈＳ酸化物が少量であるため
、樹脂組成物において粘度上昇が小さく、流動性の悪化
にまで至らない。The mechanism by which the silica specified by the present invention exhibits good moldability when filled in a resin is presumed as follows. That is, (1) in the resin composition, the primary particle size is 0.
．． A finely divided metal oxide having a diameter of 1 μm or less is uniformly injected as a modifier to modify the rheological properties of the resin composition itself. (2) Tetraoxide in fine powder gold with a primary particle size of 0.1 μm or less interacts with the surface of granular silica with a particle size of 1 μm or more to form conventional granular silica for semiconductor sealing materials. In comparison, the adhesive force between the 0.1 μm or more granular silica and the resin is increased, and the resin is prevented from flowing out from the mold, and no flaking occurs. (3) Primary particle diameter is 01
Since the amount of gold hS oxide in the form of fine powder of μm or less is small, the increase in viscosity in the resin composition is small and does not lead to deterioration of fluidity.
上記した本発明の作用機構から明らかなように、本発明
における微粉状の金属酸化物としては、１次粒子径が０
１μｍ以下であればシリカに限らず、アルミナ、チタニ
アなども同等の効果を発揮されることが容易に期待され
る。As is clear from the mechanism of action of the present invention described above, the fine powder metal oxide in the present invention has a primary particle size of 0.
If the thickness is 1 μm or less, it is easily expected that not only silica but also alumina, titania, etc. will exhibit the same effect.
本発明は、特に半導体封止材用シリカとして有用であり
、従来の半導体封止材用粒状シリカに比べて、樹脂に充
填して成形に供した場合にパリの発生が殆んど解消され
、流動性の悪化を伴うこともなく、成形性の向上が達成
される。The present invention is particularly useful as silica for semiconductor encapsulants, and compared to conventional granular silica for semiconductor encapsulants, when it is filled into a resin and subjected to molding, the generation of paris is almost eliminated, Improved moldability is achieved without deterioration of fluidity.
また、本発明のシリカは、従来の半導体封止材用粒状シ
リカに単に特定した微粉状の金ｙ４酸化物を少量混合す
るだけで、良好な半導体封止材用シリカとして簡便に得
られるため、実用的に極めて有利である。In addition, the silica of the present invention can be easily obtained as a good silica for semiconductor encapsulants by simply mixing a small amount of the specified finely powdered gold y4 oxide with conventional granular silica for semiconductor encapsulants. This is extremely advantageous in practical terms.
以下、本発明の実施例を示すが、本発明はこれらの実施
例に限定されるものではない。Examples of the present invention will be shown below, but the present invention is not limited to these Examples.
実施例１
四塩化珪素（５ｉ（Ａ！４）を原料として、バーナーを
用いて溶射法により、粒径が１〜１０５μｍ（平均粒子
径２５μｍ）である粒状シリカを得た。なお、この粒状
シリカは、１次粒子径が０１μｍ以下である微粉状物の
含有量は約０．４ｆｆｉｆ１％であった。次に、上記の
粒状シリカに１次粒子径が０．０２μｍである微粉状の
シリカ（徳山責達社製、商品名しオロシール）を第１表
に示す所定の含有割合によるように混合して調製した。Example 1 Using silicon tetrachloride (5i (A!4)) as a raw material, granular silica having a particle size of 1 to 105 μm (average particle size 25 μm) was obtained by thermal spraying using a burner. The content of fine powder with a primary particle size of 0.1 μm or less was about 0.4ffif1%.Next, fine powder silica (with a primary particle size of 0.02 μm) was added to the above granular silica ( The product was prepared by mixing the products (trade name: Oroshil, manufactured by Tokuyama Sadatsu Co., Ltd.) according to the predetermined content ratios shown in Table 1.
なお、上記した微粉状シリカの含有量は、苛性溶液を用
いて溶出分析することにより求めることが出来る。Note that the content of the above-mentioned fine powder silica can be determined by elution analysis using a caustic solution.
上記で調製したシリカを半導体封止材用樹脂であるエポ
キシ樹脂材に、それぞれ６５重量％の割合で充填し、溶
融ｆＪ１練して金型による成形に供した。その成形性に
ついて、評価結果を第１表に示した。第１表の成形性は
、従来の半導体封止材用粒状シリカに相当する比較例（
屋１）を基準として、パリの発生および流動性について
優（Ｏ）、良（△）および可（×）として３段階で定性
的評価を行った。The silica prepared above was filled into an epoxy resin material, which is a resin for a semiconductor sealing material, at a ratio of 65% by weight, melted and kneaded with fJ1, and then molded using a mold. Regarding the moldability, the evaluation results are shown in Table 1. The moldability in Table 1 is based on the comparative example (
Based on the standard 1), the generation of paris and fluidity were qualitatively evaluated in three stages: excellent (O), good (△), and fair (x).
第１表Table 1
Claims (1)
化物を１〜５重量％割合で含有するシリカ ２）金属酸化物がシリカである特許請求の範囲第１項記
載のシリカ ３）粒子径が１〜１５０μｍである粒状シリカを主体と
する特許請求の範囲第１項記載のシリカ ４）粒子径が１〜１００μｍである粒状シリカを主体と
する特許請求の範囲第１項記載のシリカ ５）半導体封止材用シリカである特許請求の範囲第１項
記載のシリカ ６）粒子径が１〜１５０μｍである粒状シリカに１次粒
子径が０．１μｍ以下である微粉状の金属酸化物を１〜
５重量％の割合に混合することを特徴とするシリカの製
造方法[Claims] 1) Silica containing 1 to 5% by weight of a finely divided metal oxide having a primary particle size of 0.1 μm or less; 2) The metal oxide is silica. The silica according to claim 1 3) The silica according to claim 1 which is mainly composed of granular silica having a particle size of 1 to 150 μm 4) The patent claim which mainly consists of granular silica having a particle size of 1 to 100 μm 5) The silica according to claim 1, which is silica for semiconductor encapsulant material. 6) The granular silica having a particle size of 1 to 150 μm has a primary particle size of 0.1 μm or less. A certain fine powder metal oxide is
A method for producing silica characterized by mixing at a ratio of 5% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31861087A JPH01161065A (en) | 1987-12-18 | 1987-12-18 | Silica and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31861087A JPH01161065A (en) | 1987-12-18 | 1987-12-18 | Silica and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01161065A true JPH01161065A (en) | 1989-06-23 |
Family
ID=18101060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31861087A Pending JPH01161065A (en) | 1987-12-18 | 1987-12-18 | Silica and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01161065A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01204456A (en) * | 1988-02-09 | 1989-08-17 | Nitto Denko Corp | Semiconductor device |
| WO2007142047A1 (en) | 2006-06-09 | 2007-12-13 | Tokuyama Corporation | Dry-process fine silica particle |
| JP2019516653A (en) * | 2016-05-04 | 2019-06-20 | サウジ アラビアン オイル カンパニーＳａｕｄｉ Ａｒａｂｉａｎ Ｏｉｌ Ｃｏｍｐａｎｙ | Method of treating fumed metal oxides |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56106951A (en) * | 1980-01-14 | 1981-08-25 | Plaskon Prod | Burrrproofing epoxy capsule covered composition and its manufacture |
| JPS57123249A (en) * | 1981-01-26 | 1982-07-31 | Toshiba Corp | Epoxy resin molding compound |
| JPS57195117A (en) * | 1981-05-27 | 1982-11-30 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and its preparation |
| JPS5922955A (en) * | 1982-07-29 | 1984-02-06 | Toshiba Chem Corp | Resin composition for sealing semiconductor |
| JPS59108026A (en) * | 1982-12-10 | 1984-06-22 | Toshiba Chem Corp | Epoxy resin composition for sealing |
-
1987
- 1987-12-18 JP JP31861087A patent/JPH01161065A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56106951A (en) * | 1980-01-14 | 1981-08-25 | Plaskon Prod | Burrrproofing epoxy capsule covered composition and its manufacture |
| JPS57123249A (en) * | 1981-01-26 | 1982-07-31 | Toshiba Corp | Epoxy resin molding compound |
| JPS57195117A (en) * | 1981-05-27 | 1982-11-30 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and its preparation |
| JPS5922955A (en) * | 1982-07-29 | 1984-02-06 | Toshiba Chem Corp | Resin composition for sealing semiconductor |
| JPS59108026A (en) * | 1982-12-10 | 1984-06-22 | Toshiba Chem Corp | Epoxy resin composition for sealing |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01204456A (en) * | 1988-02-09 | 1989-08-17 | Nitto Denko Corp | Semiconductor device |
| WO2007142047A1 (en) | 2006-06-09 | 2007-12-13 | Tokuyama Corporation | Dry-process fine silica particle |
| US7803341B2 (en) | 2006-06-09 | 2010-09-28 | Tokuyama Corporation | Fine dry silica particles |
| JP2019516653A (en) * | 2016-05-04 | 2019-06-20 | サウジ アラビアン オイル カンパニーＳａｕｄｉ Ａｒａｂｉａｎ Ｏｉｌ Ｃｏｍｐａｎｙ | Method of treating fumed metal oxides |
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