JPH01142078A - Sputtering target - Google Patents

Sputtering target

Info

Publication number
JPH01142078A
JPH01142078A JP62300824A JP30082487A JPH01142078A JP H01142078 A JPH01142078 A JP H01142078A JP 62300824 A JP62300824 A JP 62300824A JP 30082487 A JP30082487 A JP 30082487A JP H01142078 A JPH01142078 A JP H01142078A
Authority
JP
Japan
Prior art keywords
target
rare earth
transition metal
earth metal
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62300824A
Other languages
Japanese (ja)
Other versions
JP2744991B2 (en
Inventor
Mieko Kofukada
小深田 美惠子
Toshiaki Kashihara
樫原 俊昭
Rie Kojima
理恵 児島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62300824A priority Critical patent/JP2744991B2/en
Publication of JPH01142078A publication Critical patent/JPH01142078A/en
Application granted granted Critical
Publication of JP2744991B2 publication Critical patent/JP2744991B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To enable the formation of a film having a narrow compsn. distribution and uniform characteristics by regulating the amts. of a rare earth metal, a transition metal and an intermetallic compd. of the metals in the compsn. of a target. CONSTITUTION:This sputtering target is based on a rare earth metal and a transition metal and is composed of rare earth metal grins, transition metal grains and grains of an intermetallic compd. of the metals. The intermetallic compd. is contained by <=20wt.% of the amt. of the target and the grain size of the compd. is 5-50% of the average grain size of the rare earth metal grains or the transition metal grains.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、高密度、大容量記録を可能とした光ディスク
の中で、書きかえ可能な光磁気ディスク作製に用いられ
る希土類・遷移金属を主成分とするスパッタリングター
ゲットに関するものである。
[Detailed Description of the Invention] Industrial Field of Application The present invention is an optical disc that has rare earths and transition metals as its main components and is used in the production of rewritable magneto-optical discs that enable high-density, large-capacity recording. The invention relates to a sputtering target.

従来の技術 スパッタリング法とは、膜の材料物質をターゲットとし
て、加速された止イオンがターゲット表面に衝突するこ
とにより、運動量の交換によってターゲットを構成する
粒子が空間に放出され、る現象を利用して、空間に放出
された粒子を基板上に堆積させて薄膜を形成する技術で
ある。希土類・遷移金属系の媒体を記録媒体とする光磁
気ディスクでは、スパッタリング方法としては、希土類
金属ターゲットと、遷移金属ターゲットという様に、成
分元素の数に応じて複数枚のターゲットを用いてそれぞ
れ、放電パワーなど放電条件の調整を行いながら成膜す
る、いわゆるマルチターゲツト法と、−枚のターゲット
に成分元素をすべて含む、いわゆる合金ターゲットを用
いる方法がある。マルチターゲツト法は、組成変更が用
意であることにより、研究段階でよ(用いられている方
法であるが、ターゲットの数に応じて電極が必要である
ために、量産に際しては合金ターゲツト法が主に利用さ
れる。希土類・遷移金属系の合金ターゲットには、成分
元素の純金属の粉末を混合し、HIPなどの方法により
圧縮プレスしたターゲットや、或は成分元素の金属をす
べて溶融した後粉砕しHIPなどの方法により圧縮プレ
スしたターゲットがある。純金属の粉末を混合し圧縮プ
レスしたタイプの合金ターゲットには金属間化合物は含
まれておらず、また成分元素の金属をすべて溶融した後
粉砕した圧縮プレスしたタイプの合金ターゲット中ト、
組成的に可能な金属間化合物が含まれ、組成的に金属間
化合物とならない成分が純金属或は合金として存在する
The conventional sputtering method utilizes a phenomenon in which particles constituting the target are released into space through an exchange of momentum when accelerated stationary ions collide with the surface of the target using the film material as a target. This is a technique in which particles released into space are deposited on a substrate to form a thin film. For magneto-optical disks that use rare earth/transition metal-based media as recording media, the sputtering method uses multiple targets depending on the number of component elements, such as a rare earth metal target and a transition metal target. There is a so-called multi-target method in which film formation is performed while adjusting discharge conditions such as discharge power, and a method in which a so-called alloy target is used in which two targets contain all the component elements. The multi-target method is often used at the research stage because it allows composition changes, but since electrodes are required depending on the number of targets, the alloy target method is the main method for mass production. Rare earth/transition metal alloy targets include targets that are made by mixing powders of pure metals as constituent elements and compression-pressed using a method such as HIP, or targets that are crushed after all the constituent metals have been melted. There are targets that are compressed and pressed using methods such as HIP.Alloy targets that are made by mixing pure metal powder and compression pressing do not contain intermetallic compounds, and are crushed after all of the component metals have been melted. Compression pressed type alloy target medium,
Compositionally possible intermetallic compounds are included, and components that are not compositionally intermetallic compounds exist as pure metals or alloys.

発明が解決しようとする問題点 しかしながら以上のような従来のターゲットでは、金属
元素により、或は金属間化合物2合金。
Problems to be Solved by the Invention However, in the above-mentioned conventional targets, metal elements or intermetallic compounds or two alloys are used.

純金属によりスパッタの際、粒子の飛び出す向きに分布
があり基板上特性或は組成の均一性が得られないという
問題があった。本発明はががる点に鑑みてなされたもの
で、基板上、組成或は特性の均一性の良好な記録膜を得
るためのものである。
When sputtering pure metal, there is a problem in that the particles are distributed in the direction in which they fly out, making it impossible to obtain uniform properties or composition on the substrate. The present invention has been made in view of the problem of peeling, and is intended to obtain a recording film with good uniformity of composition or characteristics on a substrate.

問題点を解決するための手段 本発明は上記のような問題点を解決するためになされた
もので、ターゲットの組成中、純金属成分と、金属間化
合物の含有量を調節することにより、基板上、特性の均
一性の良い膜が得られるものである。
Means for Solving the Problems The present invention has been made to solve the above problems, and by adjusting the content of pure metal components and intermetallic compounds in the composition of the target, Moreover, a film with good uniformity of properties can be obtained.

作   用 上記のようにターゲットの組成中、純金属成分と、金属
間化合物の含有量を調整することにより、ターゲット中
での成分元素の種類、或は存在形体によって、スパッタ
の際に粒子の飛び出す向きに分布があることを利用して
基板上に特性或は組成の均一な膜が形成される。
Effect As mentioned above, by adjusting the content of pure metal components and intermetallic compounds in the composition of the target, particles flying out during sputtering can be reduced depending on the type or form of the component elements in the target. By utilizing the directional distribution, a film with uniform properties or composition can be formed on the substrate.

実施例 第1図に、本発明の一実施例である、金属間化合物と純
金属が適度に存在しているターゲットの組織図を示す。
Embodiment FIG. 1 shows a structure diagram of a target in which intermetallic compounds and pure metals are present in appropriate amounts, which is an embodiment of the present invention.

例えば、希土類・遷移金属系合金のうちT b−F e
 、Coを例にとると、遷移金属粒子の周囲にTbFe
或はTbCoの金属間化合物が形成されている。このよ
うな組織を有するターゲットは、成分元素の純金属を混
合した後、HIPなどの方法により圧縮プレス、しなか
、ら、或は圧縮プレスした後に熱などのエネルギーをか
けることにより金属間化合物を形成する。エネルギー量
により金属間化合物の量や粒径を調整するのである。又
は、先にT b F e 、 T’ b Coなとの金
属間化合物粉を作っておき、純金属粉と混合し、圧縮プ
レスしても良い。例えばTbは、ターゲット中純金属と
して存在する場合は、第2図aに示すように、比較的、
角度をもってターゲットから飛び出すためにターゲット
の直上に基板が位置する場合基板・の中心部は低濃度に
なり、外になるに従って多く存在するようになるが、第
2図すに示すようにFe、Coなどは逆にターゲットの
直上に飛び出すために基板の中心部の濃度が高くなり外
になるに従って低濃度になる。光磁気媒体の場合、この
濃度差は保磁力の分布として表れる。基−5= 板上で前記のような組成分布があると、保磁力は例えば
第3図に示すような分布になる。第3図の分布は、膜組
成が、基板面上、遷移金属リッチ側にあるような場合の
例である。しかしながら、例えばTbは、ターゲット中
、金属間化合物として存在す4場合は、スパッタの際、
ターゲットの直上により多く飛び出すようになり、逆に
FeやCoは角度をもって飛び出すようになる。このこ
とを利用して、ターゲット成分中、純金属で存在する粒
子と金属間化合物として存在する粒子数を適度にするこ
とにより、第4図に示すように基板上、組成分布を小さ
くおさえることが可能となる。例えば純金属を混合し、
圧縮プレスした後に例えば熱を加えて金属間化合物を形
成する場合は、例えば100μm程度にすれば良い。
For example, among rare earth/transition metal alloys, T b - Fe
, Co as an example, TbFe is placed around the transition metal particles.
Alternatively, an intermetallic compound of TbCo is formed. A target with such a structure can be produced by mixing pure metals as component elements and then compressing and pressing them using a method such as HIP, or applying energy such as heat after compression pressing to form intermetallic compounds. Form. The amount and particle size of intermetallic compounds are adjusted depending on the amount of energy. Alternatively, intermetallic compound powder such as T b Fe or T' b Co may be prepared in advance, mixed with pure metal powder, and compressed. For example, when Tb is present as a pure metal in the target, as shown in Figure 2a, it is relatively
When the substrate is located directly above the target because it flies out from the target at an angle, the concentration of Fe, Co and On the other hand, because they jump out directly above the target, the concentration is high in the center of the substrate and becomes low as it goes outside. In the case of magneto-optical media, this concentration difference appears as a distribution of coercive force. Base-5= If there is a composition distribution as described above on the plate, the coercive force will have a distribution as shown in FIG. 3, for example. The distribution in FIG. 3 is an example where the film composition is on the transition metal rich side on the substrate surface. However, for example, if Tb exists as an intermetallic compound in the target, during sputtering,
More of it will fly out directly above the target, and conversely, Fe and Co will come out at an angle. By taking advantage of this fact and adjusting the number of pure metal particles and intermetallic compound particles in the target component, it is possible to suppress the composition distribution on the substrate as shown in Figure 4. It becomes possible. For example, by mixing pure metals,
If an intermetallic compound is formed by applying heat after compression pressing, the thickness may be, for example, about 100 μm.

発明の効果 以上述べて来たように、ターゲット中での各成分元素の
存在形体を選ぶことにより、基板上、組成分布が小さく
、特性の均一性の良好な膜を形成することが出来、実用
的に極めて有効である。
Effects of the Invention As mentioned above, by selecting the form in which each component element exists in the target, it is possible to form a film on the substrate with a small composition distribution and good uniformity of properties, which is useful for practical use. It is extremely effective.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例であるターゲット組織の模式
図、第2図aは純金属として存在するTb粒子がスパッ
タの際に飛び出す飛行方向分布を示す模式図、第2図す
は純金属として存在するFe粒子がスパッタの際に飛び
出す飛行方向分布を示す模式図、第3図は金属間化合物
の含有量が適当でないターゲットで成膜した膜の基板面
上の保磁力分布のグラフ、第4図は適度に調整された金
属間化合物を含有するターゲットで成膜された膜の基板
上での保磁力の分布のグラフである。 1・・・・・・Fe粒子、2・・・・・・金属間化合物
、3・・・・・・Tb粒子。 代理人の氏名 弁理士 中尾敏男 ほか1名4.0  
                  訳註     
          区 −へ 派               塚
Fig. 1 is a schematic diagram of a target structure according to an embodiment of the present invention, Fig. 2a is a schematic diagram showing the flight direction distribution of Tb particles existing as pure metal flying out during sputtering, and Fig. A schematic diagram showing the flight direction distribution of Fe particles existing as metal flying out during sputtering. Figure 3 is a graph of the coercive force distribution on the substrate surface of a film formed using a target with an inappropriate content of intermetallic compounds. FIG. 4 is a graph of the distribution of coercive force on a substrate of a film formed with a target containing an appropriately adjusted intermetallic compound. 1...Fe particles, 2...Intermetallic compound, 3...Tb particles. Name of agent: Patent attorney Toshio Nakao and 1 other person 4.0
Translation note
Ward-hehazuka

Claims (3)

【特許請求の範囲】[Claims] (1)希土類金属と遷移金属を主成分とし、少なくとも
希土類金属粒子と遷移金属粒子と、希土類金属と遷移金
属との金属間化合物粒子を含むことを特徴とするスパッ
タリングターゲット。
(1) A sputtering target characterized by containing a rare earth metal and a transition metal as main components, and containing at least rare earth metal particles, transition metal particles, and intermetallic compound particles of a rare earth metal and a transition metal.
(2)金属間化合物の質量又は重量が、スパッタリング
ターゲット物質の質量又は重量の20%以内であること
を特徴とする特許請求の範囲第1項記載のスパッタリン
グターゲット。
(2) The sputtering target according to claim 1, wherein the mass or weight of the intermetallic compound is within 20% of the mass or weight of the sputtering target material.
(3)金属間化合物の厚み又は粒径が、希土類金属粒子
又は遷移金属粒子の平均粒径の5%以上50%以下であ
ることを特徴とする特許請求の範囲第1項又は第2項記
載のスパッタリングターゲット。
(3) Claim 1 or 2, characterized in that the thickness or particle size of the intermetallic compound is 5% or more and 50% or less of the average particle size of the rare earth metal particles or transition metal particles. sputtering target.
JP62300824A 1987-11-27 1987-11-27 Sputtering target Expired - Lifetime JP2744991B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62300824A JP2744991B2 (en) 1987-11-27 1987-11-27 Sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62300824A JP2744991B2 (en) 1987-11-27 1987-11-27 Sputtering target

Publications (2)

Publication Number Publication Date
JPH01142078A true JPH01142078A (en) 1989-06-02
JP2744991B2 JP2744991B2 (en) 1998-04-28

Family

ID=17889547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62300824A Expired - Lifetime JP2744991B2 (en) 1987-11-27 1987-11-27 Sputtering target

Country Status (1)

Country Link
JP (1) JP2744991B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422906A (en) * 1990-05-18 1992-01-27 Hitachi Cable Ltd Production of rare earth element-added waveguide
US9579921B2 (en) 2005-08-19 2017-02-28 Giesecke & Devrient Gmbh Card-shaped data carrier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199640A (en) * 1984-10-18 1986-05-17 Mitsubishi Metal Corp Manufacture of composite target material
JPS61119648A (en) * 1984-11-16 1986-06-06 Mitsubishi Metal Corp Sintered composite target material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199640A (en) * 1984-10-18 1986-05-17 Mitsubishi Metal Corp Manufacture of composite target material
JPS61119648A (en) * 1984-11-16 1986-06-06 Mitsubishi Metal Corp Sintered composite target material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0422906A (en) * 1990-05-18 1992-01-27 Hitachi Cable Ltd Production of rare earth element-added waveguide
US9579921B2 (en) 2005-08-19 2017-02-28 Giesecke & Devrient Gmbh Card-shaped data carrier

Also Published As

Publication number Publication date
JP2744991B2 (en) 1998-04-28

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