JPH01140546A - Element for evaluation of radiating beam area - Google Patents

Abstract

PURPOSE:To evaluate the radiating beam area by presenting two or more substances of elements or substances of different conditions in a same surface, surrounding one substance by the other substances in the surface, and arranging plural content of substances with the same structure and different areas. CONSTITUTION:At a specific position of an Al membrane 2 on a Si substrate 1, openings of 0.1 to 10mum are formed selectively increasing the diameter 0.1mum in order. W3 is piled up to fill the opening to make an element to evaluate the analyzing area. A beam is radiated to an area 8 which is smaller than the imaginative beam diameter, and the reflected beam 5 is detected by a detector 7 to get a signal. The areas are irradiated in order of increasing area, the signal of the surrounding substance 2 is extinguished at last, and only the signal of surrounded substance 3 is detected. By measuring the area of the scope in that time, the value is the effective analysis scope. In such a composition, the effective analysis scope of the level of diameter 5mum can be measured at the accuracy of 0.1mum.

Description

Detailed Description of the Invention [Industrial Field of Application] The present invention relates to incident beam diameter measurement in analysis using beams such as X-rays, ions, electrons, and light, and particularly to beam diameter evaluation suitable for analysis using fine beams. Regarding the device for use.

[Prior Art] Conventionally, in the above-mentioned beam-based analysis, the incident beam diameter on a sample is measured by measuring a region coated with a fluorescent substance that emits fluorescence when irradiated with the beam, or a photographic film directly irradiated with the beam. The darkened area on the film was measured using an optical microscope or visually.

[Problems to be Solved by the Invention] In analysis using a fine beam, it is important to measure the effective analysis area on the sample in a state where the incident beam system, the sample system, and the detection system are integrated. However, with the prior art, although it was possible to measure the diameter (area) of the incident beam itself, it was difficult to evaluate the effective analysis area. In addition, the measurement method using a fluorescent screen requires measurement with an optical microscope during beam irradiation, the sample system is located in a vacuum chamber in the case of electron or ion beam devices, and it is dangerous to use X-ray devices, so long periods of time are required. It is necessary to use a focusing microscope. As a result, when the diameter of the irradiated beam on the fluorescent screen is less than 5 to 10 μm, there is a problem in that it is difficult to measure the irradiated beam diameter. Furthermore, although the photographic film method does not require observation using a microscope during beam irradiation as described above, it has been difficult to measure fine beams of several μm or less due to the size of the silver particles coated on the film. An object of the present invention is to enable an analyzer to measure an effective analysis area that includes the entire system, and also to enable accurate measurement of a fine analysis area of several μm or less.

[Means for solving the problem] The above purpose is to arrange substances such that two or more types of substances with different states or elements exist within the same plane, and to arrange the substances so that they are surrounded by other substance groups, and to This can be achieved by manufacturing an element in which a plurality of the above-mentioned enclosed substances having different areas are arranged before and after the incident beam diameter. The element is manufactured by forming a film to serve as the surrounding material on a predetermined substrate, and then removing a predetermined portion of the film by lithography technology and etching technology using plasma or the like, and then drinking it away to form a hole. A substance to be surrounded only in a portion is embedded using the film formation technology and the pattern formation technology described above.

[Operation] The element formed by the above method is set at the sample setting position of the analyzer in which the effective analysis area is to be measured, and first, from the assumed incident beam diameter on the element, the /I41 surrounding material area is irradiated with a beam. and confirm that the detector detects a signal consisting of both the surrounding and the surrounding material. Next, the beam is irradiated to a region where the area of the surrounded substance is large, and the signals from both substances are detected in the same way.6 Gradually, the area of the substance to be surrounded is expanded, and the signal of the surrounded substance disappears, and the signal of the surrounded substance is Measure the area of the region where the substance-only signal is detected. This value becomes the effective analysis area of the entire analyzer system. In manufacturing the above element, by applying electron beam or X-ray exposure technology, the diameter of the material region to be surrounded can be finely formed to 0.1 to 0.2 μm.

An embodiment of the present invention will be described above with reference to FIG.

Afl, 2 was deposited to a thickness of 500 nm on a Si substrate 1, and the diameter was etched at predetermined positions on the AQ by 0.1 μm from 0.1 to 10 μm using an electron beam exposure device, lithography technology, and reactive ion etching technology. different holes were opened. Next, W, 3 was deposited to a thickness of 500 nm, and AQ was removed using the same patterning technique as described above, leaving W only in the holed areas to form a 0-wire element that constituted the analysis area evaluation element of the present invention. Applied to an X-ray diffraction and fluorescence Xa analyzer using a focused X-ray beam, 4, the effective analysis area of about 5 μm diameter, which was previously impossible to measure, was reduced to 0.1
It was possible to measure with an accuracy of μm. The same device was also applied to a secondary ion mass spectrometer using fine primary ions,
It was confirmed that the same device can analyze microscopic areas with a diameter of 0.3 μm. In addition.

It is desirable that the above-mentioned elements be the most sensitive combination in the target analytical device.

[Effects of the Invention] According to the present invention, the beam diameter can be measured under actual measurement conditions by approximately one order of magnitude or more finer than the conventional method, without evaluating the beam diameter using a substitute such as a fluorescent screen or photographic film as in the past. Since the area of the analysis region can be measured with high precision, it is effective in designing beam irradiation, sample holding, and detection systems when developing analytical equipment that uses ultrafine X-ray, ion, electron, or light beams.

[Brief explanation of the drawing]

FIG. 1 shows a cross section of an element for evaluating an analysis area according to an embodiment of the present invention, and the positional relationship of an analyzer beam source, a detector, and incident and reflected beams. FIG. 2 is a top view of the same positional relationship. one\

Claims (1)

[Claims] Two or more substances with different elements or states exist in the same plane, and one of the substances is surrounded in the plane by another substance, and the above-mentioned enclosed substances have the same structure and different areas. An element for evaluating an irradiation beam area, characterized in that a plurality of substances are arranged in the same plane.