JPH01138191A - Crucible for producing single crystal containing oxide - Google Patents
Crucible for producing single crystal containing oxideInfo
- Publication number
- JPH01138191A JPH01138191A JP29439387A JP29439387A JPH01138191A JP H01138191 A JPH01138191 A JP H01138191A JP 29439387 A JP29439387 A JP 29439387A JP 29439387 A JP29439387 A JP 29439387A JP H01138191 A JPH01138191 A JP H01138191A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- main body
- crucible body
- oxidizing gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 36
- 230000001590 oxidative effect Effects 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 abstract description 10
- 229910052741 iridium Inorganic materials 0.000 abstract description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005192 partition Methods 0.000 abstract description 4
- 239000002887 superconductor Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 125000006850 spacer group Chemical group 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000005022 packaging material Substances 0.000 abstract 2
- 239000011148 porous material Substances 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 31
- 239000000155 melt Substances 0.000 description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910002113 barium titanate Inorganic materials 0.000 description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、超電導酸化物単結晶の製造に好適の酸化物単
結晶製造用るつぼに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a crucible for producing an oxide single crystal, which is suitable for producing a superconducting oxide single crystal.
［従来の技術及びその問題点］
Ｙ−Ｂａ−Ｃｕ−０系の酸化物系超電導体は、第２図に
示すように、その融液１が白金製又はイリジウム製るつ
ぼ２内に収納され、酸化物単結晶３となって引き上げら
れる。しかしながら、このＹ −Ｂ ａ −Ｃｕ−０系
等の酸化物単結晶を製造する場合は、その製造過程にお
いて、るつぼ２に穴があく現象が発生することがある。[Prior art and its problems] As shown in FIG. 2, a Y-Ba-Cu-0 based oxide superconductor is produced by storing a melt 1 in a crucible 2 made of platinum or iridium, The oxide single crystal 3 is pulled up. However, when producing a single crystal of an oxide such as Y-B a -Cu-0, a hole may be formed in the crucible 2 during the production process.
なお、るつぼ２内の溶融原料が少なく、るっぽ２の底部
に僅かしか存在しない場合には、このようなるつぼ２に
穴があく現象が生じ４３＜い。Incidentally, if the amount of molten raw material in the crucible 2 is small and only a small amount exists at the bottom of the crucible 2, such a phenomenon occurs in which a hole is formed in the crucible 2.
しかしながら、融液１から単結晶３を成長させる場合に
は、融液１は一定以上の深さを有することが必要であり
、このように単結晶を成長させるために一定深さ以上の
融液深さを確保しようとすると、上記穴あき現象が生じ
る。However, when growing the single crystal 3 from the melt 1, it is necessary that the melt 1 has a depth of a certain level or more. If you try to ensure the depth, the above-mentioned hole formation phenomenon will occur.
本発明はかかる問題点に鑑みてなされたものであって、
るつぼに穴があくことを防止し、酸化物を含有する融液
から安定して単結晶を製造することができる酸化物を含
む単結晶の製造用るつぼを提供することを目的とする。The present invention has been made in view of such problems, and includes:
An object of the present invention is to provide a crucible for producing a single crystal containing an oxide, which prevents holes from forming in the crucible and can stably produce a single crystal from a melt containing the oxide.
［問題点を解決するための手段］
本発明に係る酸化物を含む単結晶の製造用るつぼは、酸
化物を含む単結晶の原料融液が収納されるるつぼ本体と
、このるつぼ本体の外面をその間に適長間隔をおいて取
囲む外包部材と、この外包部材をるつぼ本体に封密的に
取付ける密封部材と、るつぼ本体に設けられたガス透過
孔と、を有し、外包部材とるつぼ本体との間の密封空間
に酸化性ガスを供給することを特徴とする。[Means for Solving the Problems] The crucible for producing a single crystal containing an oxide according to the present invention includes a crucible body in which a raw material melt of a single crystal containing an oxide is stored, and an outer surface of the crucible body. It has an outer envelope member that surrounds the crucible body with an appropriate length interval therebetween, a sealing member that sealsly attaches the outer envelope member to the crucible body, and a gas permeation hole provided in the crucible body, the outer envelope member and the crucible body. It is characterized by supplying an oxidizing gas to the sealed space between the
［作用］
本願発明者等はこのるつぼに穴があく現象について種々
実験研究を重ねた結果、高温で融液中の酸化銅（ＣｕＯ
）成分が銅と酸素とに解離し、金属銅が白金製るつぼの
内表面に拡散して白金と合金化し、低融点の銀白金合金
が生成されてこの部分でるつぼが溶融し、これによりる
つぼが溶損することを見い出した。[Function] As a result of various experimental studies on the phenomenon of holes forming in the crucible, the inventors of the present application found that copper oxide (CuO) in the melt at high temperatures
) components dissociate into copper and oxygen, metallic copper diffuses into the inner surface of the platinum crucible and alloys with platinum, producing a low melting point silver-platinum alloy, which melts the crucible. It was found that the material was melted and damaged.
そして、るつぼの穴開き現象を防止すべく種々検討した
結果、融液中の酸化物の解離を防止するために、酸化性
ガスをるつぼの内面近傍に供給すればよいとの結論に達
して本発明を完成させたものである。これは、融液量が
少ない場合に穴あき現象が生じにくいのは、融液表面か
らの酸素の拡散浸透により酸化物の解離が防止されるか
らであるという考え方に則したものである。As a result of various studies to prevent the phenomenon of crucible pitting, we came to the conclusion that in order to prevent the dissociation of oxides in the melt, it would be sufficient to supply oxidizing gas near the inner surface of the crucible. It is a completed invention. This is based on the idea that the reason why the hole formation phenomenon is less likely to occur when the amount of melt is small is that the dissociation of oxides is prevented by the diffusion and permeation of oxygen from the melt surface.
本発明においては、外包部材とるつぼ本体との間に形成
される密封空間に空気又は酸素ガス等の酸化性ガスを供
給し、この酸化性ガスをるつぼ本体に設けたガス透過孔
を介してるつぼ本体内の酸化物を含む単結晶の原料融液
中に吐出する。そうすると、この酸化性ガスがるつぼ本
体の内面近傍を気泡となりて上昇し、融液中の酸化物（
例えば、Ｃｕ２０）が解離する現象が抑制される。これ
により、るつぼの構成金属と、融液中の酸化物の構成金
属との間の反応が防止され、るつぼに穴があく現象が抑
制される。In the present invention, an oxidizing gas such as air or oxygen gas is supplied to a sealed space formed between an outer packaging member and a crucible body, and the oxidizing gas is passed through a gas permeation hole provided in the crucible body to the crucible. It is discharged into the raw material melt of the single crystal containing the oxide in the main body. Then, this oxidizing gas rises near the inner surface of the crucible body in the form of bubbles, and the oxides (
For example, the phenomenon that Cu20) dissociates is suppressed. This prevents the reaction between the constituent metals of the crucible and the constituent metals of the oxide in the melt, and suppresses the phenomenon of holes forming in the crucible.
［実施例］
以下、添付の図面を参照して本発明の実施例について説
明する。[Embodiments] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第１図は本発明の実施例に係る単結晶製造用るつぼを示
す断面図である。FIG. 1 is a sectional view showing a crucible for producing a single crystal according to an embodiment of the present invention.
白金製又はイリジウム製るつぼ本体４には酸化物系超電
導体の原料融液１が収納される。このるつぼ本体４の側
壁及び底壁には、ガスを透過させるための多数のガス透
過孔５が穿設されている。A raw material melt 1 of an oxide superconductor is stored in a crucible body 4 made of platinum or iridium. A large number of gas permeation holes 5 are bored in the side wall and bottom wall of the crucible body 4 to allow gas to pass therethrough.
そして、このるつぼ本体４を取囲む外包部材６がスペー
サ７によりるつぼ本体４との間に適長間隔をおいて配設
されている。この外包部材６はその上端にて、シール部
材８を介してるつぼ本体４の上端に封密的に固定されて
おり、これにより外包部材６とるつぼ本体４との間に密
封空間９が形成される。外包部材６の側面上端部には酸
化性ガスの供給源に連結された複数個の供給バイブ１０
が密封空間９に連通ずるように取付けられている。An outer envelope member 6 surrounding the crucible body 4 is disposed with a spacer 7 at an appropriate distance from the crucible body 4. The upper end of the outer envelope member 6 is hermetically fixed to the upper end of the crucible body 4 via a seal member 8, thereby forming a sealed space 9 between the outer envelope member 6 and the crucible body 4. Ru. A plurality of supply vibrators 10 connected to an oxidizing gas supply source are provided at the upper end of the side surface of the outer envelope member 6.
is attached so as to communicate with the sealed space 9.
この供給バイブ１０を介して酸化性ガスが密封空間９に
供給される。酸化性ガスとしては、酸素ガス、酸素とア
ルゴンとの混合ガス、酸素と窒素との混合ガス、酸素と
ヘリウムとの混合ガス又は空気等がある。Oxidizing gas is supplied to the sealed space 9 via this supply vibe 10 . Examples of the oxidizing gas include oxygen gas, a mixed gas of oxygen and argon, a mixed gas of oxygen and nitrogen, a mixed gas of oxygen and helium, or air.
るつぼ本体４の内側底部近傍には、アルミナ又はジルコ
ニア等の耐火物製隔壁１１がるつぼ本体４の底面から適
長間隔をおいて水平に設置されている。Near the inner bottom of the crucible body 4, a partition wall 11 made of a refractory material such as alumina or zirconia is installed horizontally at an appropriate distance from the bottom surface of the crucible body 4.
次に、このように構成された単結晶製造用るつぼの動作
について説明する。供給バイブ１０を介して酸化性ガス
を密封空間９に供給し、この酸化性ガスをガス吐出孔５
を介してるつぼ本体４内に吐出させる。次いで、るつぼ
本体４に酸化物超電導体単結晶の原料融液１を装入する
。そうすると、密封空間９に供給された酸化性ガスはる
つぼ本体４に設けられたガス透過孔５を介してるつぼ本
体４内の融液１内に吐出され、融液１中を気泡となって
上昇する。るつぼ本体４の側壁部分から供給される酸化
性ガスはるつぼ本体４の内側面の近傍に気泡流を形成す
る。Next, the operation of the single crystal manufacturing crucible configured as described above will be explained. Oxidizing gas is supplied to the sealed space 9 via the supply vibrator 10, and the oxidizing gas is supplied to the gas discharge hole 5.
The liquid is discharged into the crucible main body 4 through. Next, the raw material melt 1 of the oxide superconductor single crystal is charged into the crucible body 4 . Then, the oxidizing gas supplied to the sealed space 9 is discharged into the melt 1 in the crucible body 4 through the gas permeation hole 5 provided in the crucible body 4, and rises in the melt 1 as bubbles. do. The oxidizing gas supplied from the side wall portion of the crucible body 4 forms a bubble flow near the inner surface of the crucible body 4.
一方、るつぼ本体４と外包部材６との間には、スペーサ
７が設けられているから、るつぼ本体４は融液１の重量
によって圧潰することはない。従って、酸化性ガスが通
流する空間が十分に確保され、るつぼ本体４の底面から
も酸化性ガスが融液中に供給される。このるつぼ本体４
の底面から供給された酸化性ガスは、−旦その底面から
気泡となって融液中を上昇し、次いで、隔壁１１によつ
てその上昇が阻止されてるつぼ本体４の側面近傍にまわ
り込み、側面近傍を上昇する。On the other hand, since the spacer 7 is provided between the crucible body 4 and the outer packaging member 6, the crucible body 4 will not be crushed by the weight of the melt 1. Therefore, a sufficient space for the oxidizing gas to flow is ensured, and the oxidizing gas is also supplied into the melt from the bottom surface of the crucible body 4. This crucible body 4
The oxidizing gas supplied from the bottom surface first rises in the melt as bubbles from the bottom surface, and then wraps around the vicinity of the side surface of the crucible body 4 whose rise is prevented by the partition wall 11. Climb near the side.
このようにして、酸化性ガスの気泡が白金製又はイリジ
ウム製のるつぼ本体４の内面近傍に存在する状態で、酸
化物単結晶３がその中心軸の周りに回転しつつ引き上げ
られる。従って、気泡から拡散浸透する酸素によって、
るつぼ本体４の内面近傍の融液はその酸素濃度が高くな
る。このため、高温にて原料融液中の酸化銅（Ｃｕｂ）
が銅（Ｃｕ）と酸素（０）とに解離する反応が抑制され
、融液中に銅が生成することが防止されるので、るつぼ
本体４の白金又はイリジウムが銅と合金化して溶損する
ことがない。In this manner, the oxide single crystal 3 is pulled up while rotating around its central axis while the oxidizing gas bubbles are present near the inner surface of the crucible body 4 made of platinum or iridium. Therefore, due to oxygen diffusing from the bubbles,
The melt near the inner surface of the crucible body 4 has a high oxygen concentration. Therefore, copper oxide (Cub) in the raw material melt at high temperature
This suppresses the reaction in which copper dissociates into copper (Cu) and oxygen (0), and prevents the formation of copper in the melt, preventing platinum or iridium in the crucible body 4 from alloying with copper and melting away. There is no.
また、この酸化性ガスの気泡が融液１中を上昇しつつ酸
化物単結晶３の引き上げがなされるので、この引き上げ
処理中に周辺部の融液１が気泡によりバブリング攪拌さ
れる。このため、均質な結晶成長が助長される。Further, since the oxide single crystal 3 is pulled up while the bubbles of the oxidizing gas rise in the melt 1, the melt 1 in the peripheral area is bubbling and stirred by the bubbles during this pulling process. Therefore, homogeneous crystal growth is promoted.
更に、隔壁１１を設けであるので、単結晶３の成長部室
下には、融液の乱れが存在しないので、均質な結晶成長
を阻害することはない。Further, since the partition wall 11 is provided, there is no turbulence of the melt under the growth chamber of the single crystal 3, so that homogeneous crystal growth is not inhibited.
次に、本発明の実施例に係るるつぼを使用してチタン酸
バリウムの単結晶を製造した製造試験結果について、従
来のるつぼを使用して製造した場合と比較して説明する
。Next, the results of a manufacturing test in which a single crystal of barium titanate was manufactured using a crucible according to an example of the present invention will be described in comparison with the case where a single crystal of barium titanate was manufactured using a conventional crucible.
先ず、Ｙ２０３ 、ＢａＯ及びＣｕＯの粉体を夫々モル
％で（１）： （４，８）： （１１，５）の比になる
ように混合し、この混合粉体が６０重量％、炭酸ナトリ
ウムが４０重量％になるように、内径が約５０１１１１
１１、深さが約６０市のるつぼ本体内に約６〇−装入し
た。そして、るつぼ本体の内容物を９５０°Ｃに温度制
御すると共に、直径が１市のチタン酸バリウム（ＢａＴ
ｉ０３）の単結晶を毎分２０回転の速度で回転させつつ
、毎時０． １市の速度で引き上げた。この場合に、る
つぼ本体内壁のガス透過孔から空気を０．１１１／分の
流量で融液中に噴出させた。なお、隔壁は直径が４０龍
、厚さが２市のアルミナ製である。First, powders of Y203, BaO, and CuO were mixed in mole % in a ratio of (1): (4,8): (11,5), and this mixed powder was mixed with 60% by weight of sodium carbonate. The inner diameter is approximately 501111 so that the amount is 40% by weight.
11. About 60 mm was charged into the crucible body with a depth of about 60 mm. Then, the temperature of the contents of the crucible body is controlled at 950°C, and barium titanate (BaT) with a diameter of 1 city is heated.
The single crystal of i03) is rotated at a speed of 20 revolutions per minute while rotating at a speed of 0.5 revolutions per hour. It was raised at the speed of one city. In this case, air was blown into the melt from the gas permeation holes in the inner wall of the crucible body at a flow rate of 0.111/min. The bulkhead is made of alumina with a diameter of 40 mm and a thickness of 2 mm.
約１０時間経過後、直径が１．５ｍｍ、長さが０゜８・
ｍｆｆＩのＹＩ Ｂ ａ３ Ｃｕ３０ｘの斜方晶の単結
晶がチタン酸バリウム種結晶の先端に成長していた。After about 10 hours, the diameter was 1.5 mm and the length was 0°8.
An orthorhombic single crystal of YI Ba3 Cu30x of mffI was growing at the tip of the barium titanate seed crystal.
そして、上記操作を２０回繰り返したが、るつぼ本体に
穴があくことがなく、継続して使用することができな。Although the above operation was repeated 20 times, no holes were made in the crucible body, and the crucible could not be used continuously.
一方、従来のるつぼを使用して同じくチタン酸バリウム
の単結晶を製造した場合は、厚さが０゜１ｍｌ１１の白
金るつぼを使用して上記操作を８回繰り返したところ、
るつぼに穴がおいてしまった。On the other hand, when a single crystal of barium titanate was similarly produced using a conventional crucible, the above operation was repeated eight times using a platinum crucible with a thickness of 0°1 ml.
There was a hole in the crucible.
また、白金るつぼではなく、イリジウム製のるつぼを使
用しても、穴があくという現象は同様に生じた。Further, even when an iridium crucible was used instead of a platinum crucible, the same phenomenon of holes occurred.
このように、従来のるつぼにおいては、短期間で穴がお
いてしまったが、本発明の実施例に係るるつぼにおいて
は、酸化物を含有する融液がら単結晶を安定して多数回
に亘り引き上げ処理することができた。In this way, in the conventional crucible, a hole formed in a short period of time, but in the crucible according to the embodiment of the present invention, a single crystal can be stably formed from the oxide-containing melt many times. I was able to pull it up and process it.
なお、るつぼ本体内の融液中に酸化性ガスを供給するガ
ス透過孔の構造は上記実施例に限らず、種々の変形が可
能である。また、ガス透過孔の孔径もるつぼに保持され
る融液の量に基いて適切なものを選定すればよいことは
勿論である。Note that the structure of the gas permeation hole that supplies oxidizing gas into the melt in the crucible body is not limited to the above embodiment, and various modifications are possible. Furthermore, it goes without saying that the diameter of the gas permeation holes may be appropriately selected based on the amount of melt held in the crucible.
［発明の効果］。[Effect of the invention].
本発明によれば、るつぼ本体と外包部材との二重構造に
し、るつぼ本体の内面に酸化性ガスの気泡を供給するか
ら、融液中の酸化物の解離が抑制され、るつぼ本体を構
成する白金又はイリジウム等の金属が溶損することはな
い。従って、安定して酸化物単結晶を成長させることが
できると共に、気泡により融液周辺部が攪拌されるので
、均質な結晶成長が助長される。According to the present invention, since the crucible body and the outer envelope member have a double structure and oxidizing gas bubbles are supplied to the inner surface of the crucible body, dissociation of oxides in the melt is suppressed, and the crucible body is formed. Metals such as platinum or iridium will not be eroded. Therefore, the oxide single crystal can be grown stably, and the surrounding area of the melt is stirred by the bubbles, so that homogeneous crystal growth is promoted.
第１図は本発明の実施例に係る単結晶製造用るつぼを示
す断面図、第２図は従来の単結晶製造用るつぼを示す断
面図である。FIG. 1 is a sectional view showing a crucible for producing a single crystal according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional crucible for producing a single crystal.
Claims (1)
体と、このるつぼ本体の外面をその間に適長間隔をおい
て取囲む外包部材と、この外包部材をるつぼ本体に封密
的に取付ける密封部材と、るつぼ本体に設けられたガス
透過孔と、を有し、外包部材とるつぼ本体との間の密封
空間に酸化性ガスを供給することを特徴とする酸化物を
含む単結晶の製造用るつぼ。A crucible body in which a raw material melt of a single crystal containing an oxide is stored, an outer envelope member surrounding the outer surface of the crucible body with an appropriate distance therebetween, and the outer envelope member is hermetically attached to the crucible body. Production of a single crystal containing an oxide, comprising a sealing member and a gas permeation hole provided in the crucible body, and supplying an oxidizing gas to a sealed space between the outer envelope member and the crucible body. Crucible used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29439387A JPH01138191A (en) | 1987-11-21 | 1987-11-21 | Crucible for producing single crystal containing oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29439387A JPH01138191A (en) | 1987-11-21 | 1987-11-21 | Crucible for producing single crystal containing oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01138191A true JPH01138191A (en) | 1989-05-31 |
Family
ID=17807153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29439387A Pending JPH01138191A (en) | 1987-11-21 | 1987-11-21 | Crucible for producing single crystal containing oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01138191A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0679737A1 (en) * | 1994-04-14 | 1995-11-02 | Sumitomo Electric Industries, Ltd. | Method of retaining melt of oxide and method of preparing oxide crystal |
| JPWO2023149405A1 (en) * | 2022-02-02 | 2023-08-10 |
-
1987
- 1987-11-21 JP JP29439387A patent/JPH01138191A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0679737A1 (en) * | 1994-04-14 | 1995-11-02 | Sumitomo Electric Industries, Ltd. | Method of retaining melt of oxide and method of preparing oxide crystal |
| JPWO2023149405A1 (en) * | 2022-02-02 | 2023-08-10 |
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