JPH01132190A - Semiconductor laser device - Google Patents

Abstract

PURPOSE:To electrically control a deflection of a beam by using a semiconductor laser device itself by a method wherein an active layer of a TJS type semiconductor laser device is composed of two layers and a second clad layer used to guide the beam between the two layers is provided or the like. CONSTITUTION:A semiinsulating substrate 1, a first clad layer 9, a first active layer 10, a second clad layer 11, a second active layer 12, a third clad layer 13 and a contact layer 5 are provided; p-regions 7, 6 which pierce the first clad layer 9, the first active layer 10, the second clad layer 11, the second active layer 12 and the third clad layer 13, which reach the semiinsulating GaAs substrate 1 and where Zn has been diffused in a region not covering a whole laser chip are contained; the contact layer 5 is separated by a p-n junction part; one part of the contact layer 5, the third clad layer 13, the second active layer 12 and the second clad layer 11 is separated inside the p-region 7 where Zn has been diffused. For example, when a voltage is impressed on the separated contact layer 5, it is possible to control a deflection in a longitudinal direction of an output beam.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application 1] The present invention relates to a semiconductor laser device, and particularly to a structure that enables electrical control of the deflection of its beam.

[Prior Art] FIG. 2 shows an example of the structure of a conventional AjGaAa T J S type semiconductor laser device.

This conventional semiconductor laser device has a semi-insulating GaAs substrate (
1) On top, n-type AjGaAa first cladding layer (2), n
A type AjGaAa active layer (3), an n-type A/GaAs second cladding N (4), and an n+ type GaAs contact layer (5) are grown in a liquid phase. More Z.

Expansion 1k Sare k p wA area (6), Kaho Maki Sushita p+
Form wA area (7). Two-way diffused p region (6)
Ga, n-type AjGaA+i first cladding layer (2) and n-type A
jGaAa active layer (3) and n fil A4Ga vessel 2nd
Cladding layer (4) and n-medium GaAa contact layer (5)
This is a region that penetrates through and reaches the amorphous GaAs substrate (1) K, but does not extend over the entire laser chip. In addition, the Zn-diffused p”ff (IK (7) is
6) N-type AjGaAa first Kuhood layer (2
) and n-type Δ/(JaAs layer (3) and n-type AIGaAa
Second Kuhood N(4) and n medium-sized GaAa contact layer (
5) and reaches the semi-insulating GaAa substrate (1).

Further, the part belonging to the pin region (6) in which Zn is diffused in the n-type A/GaAs active Rn (3) is designated as the active H, (8).

moreover? The type GaAs contact layer (5) is separated by etching at the pD junction in FIG. Here, the contact layer (51) inverted to p-type by diffusion is an n-shaped GaAs contact layer (5) separated by etching and inverted to p-type by expansion.

Next, the operation will be explained.

a contact layer (51) inverted to p-type by diffusion;
By applying a forward voltage between it and the 0+ type GaAs contact layer (5), the active@H (8) emits light.

[Problems to be Solved by the Invention] Since the conventional TJS type semiconductor laser device is configured as described above, the semiconductor laser device itself does not have a function to control the beam deflection. There were many problems, such as the need for a separate beam control element.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor laser device that can electrically control one direction of a beam by itself.

Ninth Means for Solving Problem H J The semiconductor laser device according to the present invention has 'L! This is a semiconductor laser device in which a JS type semiconductor laser device has two active layers and a second cladding layer for guiding light between the two layers.

[Operation J] The two active layers of the T and TS type semiconductor laser device in this invention are optically coupled by the second cladding layer provided between the two layers. The polarization of the light can be controlled by controlling the carriers that are widely spread in this layer and are active.

[Embodiment J of the Invention An embodiment of the invention will be described below with reference to the drawings. 1st
The figure shows a semiconductor laser device according to an embodiment of the present invention. This semiconductor laser device uses a semi-insulating GIiAs substrate (
1) On top, an n-type AlGaAs first cladding layer (9), a co-type A/GaA3 first active layer (lO), an n-type A/GaAa
second cladding layer (11), n-type A4GaAs second active layer (12), n-type AjGaAs third cladding layer (13),
A D-type GaAs contact layer (5) is grown by liquid phase growth. Furthermore, the expanded p @ [(6), the expanded p + Suzaka (forms the force. The expanded expanded p tilted castle (6) is the n-type A
/GaAa first cladding layer (9) and 11 type A/GaAs
First active layer (10) and D-type A/GaAs second cladding P
a (11) and type 0 AjGaAs second active NJ (12) and type D A/GaAs @3 clad a (13) and n+
type GaAs contact layer (5) and semi-insulating GaAs
It is an overhead that reaches the s-substrate (1) and does not cover the entire laser chip. The diffused p+ region (7) is
Located inside the expanded and expanded 9m area (6), n fJAAI
GaAs first cladding layer (9), T3 type AlGaAs first active layer (10), and n-type AjGaAs second cladding Z
(11), the n-type A4GaAs second active layer (12), the n-type AI GaAs third quadrant ffi (13), and the D0-type GaAs contact layer (5).
It is an overhead that reaches the substrate (1).

In addition, the part that is diffused in the n-type AlGaAs first active layer (10) and belongs to the p region (6) is defined as the first active region (14), and the part that is diffused in the mouth-type A/GaAs second active layer (12) is defined as the first active region (14). The part belonging to the pM range (6) is the second active region (15).
shall be.

The n+ type GaAs contact N(5) is p in FIG.
- Separate by etching at the D junction. More Z.

The diffused p-type GaAs contact layer (5) and the n-type A/low aA8 third cladding layer (13), each of which has been inverted to the Op type by Zn diffusion, are , n-type k
lGaAs second activity! (12) and n-type A/GaAa
A part of the cladding 11 (11) is separated by etching.

The operation will be explained below.

h diffused. b-diffused 7' separated within the medium chain region
The central part of the chip of the Cn''Q GaAs contact layer (5) is denoted by B, the left end part of the chip is denoted by A, and the n''GaAs contact layer (5) which is not h-diffused is denoted by C.

When a forward voltage is applied between A and 0, the first active head region (
14), and when a forward voltage is applied between B-0, VC carriers are mainly injected into the second active region (15).

The refractive index depends on the carrier density; as the carrier density increases, the refractive index decreases. Furthermore, when the refractive index is small, the phase velocity of light becomes large.

As a result, the output light is deflected to the side with fewer injected carriers and is emitted.

The vertical deflection of the output light can be controlled by voltages applied between the eyebrows, A-C and B-0.

[Effects of the Invention J As described above, according to the present invention, the vertical deflection of output light can be electrically controlled using only the semiconductor laser device, and an external device for controlling six directions is provided. Since there is no need to provide this, the light beam control device can be made safe and highly accurate.

[Brief explanation of the drawing]

FIG. 1 is a chip end view showing a semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is a chip end view showing a conventional semiconductor laser device. (1) is a semi-insulating GaAs substrate, (2) is a D-type AjGa
As first cladding layer, (3) n-type A/GaAs active layer, (4) n-type A/GaAs second cladding layer, (5) n-type contact 6, (6) diffused Zυ. 2 head area,
(7) p” region with diffused flowers, (8) active region, (
9) Wavy type A/GaAs first cladding layer, (10) is 0
Type AIGaAB first active layer, (11) is D type A/GaA
3 second cladding layer, (12) is n-type A/GaAa second active layer, (13) is υ-type A/GaAs third cladding layer, (
14) is the first active area, and (15) is the second active area. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Deputy person Masuo Oiwa 1st figure r: Ir Hanahiro Gkyu A3 grade? :n'l A1. GtxAs% 1') Ra V1
10: n-type ALCnA3$1;-13jLlfj11:
rL flight, ALGaAs $ 27 Latini'412:n
Chestnut Al (ZKU Asly22gi'L, 'i13', n-type ABtzAs$3') - 'J5 = n Ire As coat tact / 6: ZnU & fLL meeting FRi &'7: Zru F expansion; Envy 14: Mostly, most of all, creation! 5: Conflict 2. °9 pieces Figure 2 1'! Flower #=J'nhAsJL&2-n, type AuccAs $I flat-713:
n2A1cra-As;5lL84: n'J
AlCXllAs child 2') Recorded with rad layer 5' punishment A
3 koshi tact 1 6: Z n EtflJLL i'-1'/#'
Jx, -7:zrLEf&tτSF", n*, 15 m, i4, l

Claims (1)

[Claims] A semi-insulating GaAs substrate, a first cladding layer, a first active layer, a second cladding layer, a second active layer, a third cladding layer, and a contact layer, Semi-insulating GaAs is formed through the first cladding layer, the first active layer, the second cladding layer, the second active layer, and the third cladding layer.
The contact layer has a p-n slope with Zn diffused in a region that reaches the substrate but does not cover the entire laser chip.
A contact layer, a third cladding layer, a second active layer, and a second active layer are separated by a junction and in a Zn-diffused p region.
A semiconductor laser device in which a part of the cladding layer is separated.