JPH0113214B2 - - Google Patents
Info
- Publication number
- JPH0113214B2 JPH0113214B2 JP58160073A JP16007383A JPH0113214B2 JP H0113214 B2 JPH0113214 B2 JP H0113214B2 JP 58160073 A JP58160073 A JP 58160073A JP 16007383 A JP16007383 A JP 16007383A JP H0113214 B2 JPH0113214 B2 JP H0113214B2
- Authority
- JP
- Japan
- Prior art keywords
- cylinder
- temperature
- wafer
- window
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58160073A JPS6050917A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ温度制御装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58160073A JPS6050917A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ温度制御装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6050917A JPS6050917A (ja) | 1985-03-22 |
| JPH0113214B2 true JPH0113214B2 (enExample) | 1989-03-03 |
Family
ID=15707296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58160073A Granted JPS6050917A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ温度制御装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050917A (enExample) |
-
1983
- 1983-08-30 JP JP58160073A patent/JPS6050917A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6050917A (ja) | 1985-03-22 |
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