JPH01131059A - Production of furnace core tube of silicon carbide - Google Patents
Production of furnace core tube of silicon carbideInfo
- Publication number
- JPH01131059A JPH01131059A JP62289769A JP28976987A JPH01131059A JP H01131059 A JPH01131059 A JP H01131059A JP 62289769 A JP62289769 A JP 62289769A JP 28976987 A JP28976987 A JP 28976987A JP H01131059 A JPH01131059 A JP H01131059A
- Authority
- JP
- Japan
- Prior art keywords
- furnace core
- core tube
- silicon carbide
- resin
- yarn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 33
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 13
- 239000000835 fiber Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 9
- 238000004804 winding Methods 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000005011 phenolic resin Substances 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 229920001568 phenolic resin Polymers 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体デバイスの製造に用いられる炭化珪素質
炉芯管の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a silicon carbide furnace core tube used in manufacturing semiconductor devices.
半導体デバイスを製造するにあたっては、多くの熱処理
が行なわれる。これらの熱処理工程は、半導体ウェハを
加熱炉の炉芯管内に装入し、所定の雰囲気や反応ガスの
存在下で、外部に設けられた加熱体によって半導体ウェ
ハを加熱するものである。Many heat treatments are performed in manufacturing semiconductor devices. In these heat treatment steps, a semiconductor wafer is charged into a core tube of a heating furnace, and the semiconductor wafer is heated by an external heating element in a predetermined atmosphere or in the presence of a reaction gas.
従来、炉芯管としては石英ガラス製のものが用いられて
いた。しかし、石英ガラス製炉芯管は耐熱性に劣り、長
時間使用すると変形を起すという問題がある。Conventionally, a furnace core tube made of quartz glass has been used. However, the quartz glass furnace core tube has a problem of poor heat resistance and deformation when used for a long time.
そこで、近年、耐熱性に優れた炭化珪素質の炉芯管が使
用されるようになってきている。Therefore, in recent years, furnace core tubes made of silicon carbide, which have excellent heat resistance, have come into use.
従来、炭化珪素質の炉芯管は例えば以下のような方法に
より製造されている。すなわち、炭化珪素粉末に適当な
バインダ、添加剤を加えて炉芯管の形状に成形した後、
焼成する方法、あるいは炭化珪素粉末及び炭素粉末に適
当なバインダを加えて炉芯管の形状に成形した後、溶融
シリコンを含浸させる方法が用いられている。Conventionally, silicon carbide furnace core tubes have been manufactured, for example, by the following method. That is, after adding appropriate binders and additives to silicon carbide powder and forming it into the shape of a furnace tube,
A method of firing or a method of adding a suitable binder to silicon carbide powder and carbon powder, forming it into the shape of a furnace core tube, and then impregnating it with molten silicon is used.
ところで、半導体ウェハを熱処理する場合、半導体デバ
イスの歩留りを向」ニさせるために炉芯管内の温度分布
をできるだけ均一にすることが要求され、半導体ウェハ
の大口径化に伴ってこの要求は益々強くなっている。こ
のためには、炉芯管の熱伝導性を良好にすることが望ま
しく、肉厚の薄い炉芯管が要望されている。By the way, when heat treating semiconductor wafers, it is required to make the temperature distribution within the furnace core tube as uniform as possible in order to improve the yield of semiconductor devices, and this requirement is becoming stronger as the diameter of semiconductor wafers becomes larger. It has become. For this purpose, it is desirable to improve the thermal conductivity of the furnace core tube, and a furnace core tube with a thin wall is desired.
しかし、上述した従来の方法で肉厚の薄い炭化珪素質炉
芯管を製造しようとすると、いずれの場合も炉芯管の機
械的強度の点で問題が生じる。However, when attempting to manufacture a thin-walled silicon carbide furnace core tube using the above-mentioned conventional methods, problems arise in terms of the mechanical strength of the furnace core tube in either case.
本発明は上記問題点を解決するためになされたものであ
り、肉厚が薄く、しかも十分な機械的強度を有する炭化
珪素質炉芯管を製造し得る方法を提供することを目的と
する。The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for manufacturing a silicon carbide furnace core tube that is thin in wall thickness and has sufficient mechanical strength.
本発明の炭化珪素質炉芯管の製造方法は、炭化珪素繊維
を炭化珪素の粉末又はウィスカーを分散させた樹脂に浸
漬した後、この炭化珪素繊維を巻いて管状に成形し、こ
の成形体に溶融シリコンを含浸させることを特徴とする
ものである。The method for producing a silicon carbide furnace core tube of the present invention involves immersing silicon carbide fibers in a resin in which silicon carbide powder or whiskers are dispersed, and then winding the silicon carbide fibers to form a tube shape. It is characterized by being impregnated with molten silicon.
なお、本発明において用いられる樹脂としては例えばフ
ェノール樹脂のような熱硬化性樹脂を挙げることができ
る。In addition, examples of the resin used in the present invention include thermosetting resins such as phenol resins.
本発明方法によれば、繊維径の非常に細い炭化珪素繊維
の表面に炭化珪素の粉末又はウィスカーが分散した樹脂
が付着した状ＩＥｊで、これを巻いて成形することによ
り肉厚の薄い炉芯管形状の成形体が得られ、更に溶融シ
リコンと樹脂との反応により新たに炭化珪素が生成する
。そして、炭化珪素繊維が高強度を有し、新たに生成す
る炭化珪素も予め付着している炭化珪素の粉末又はウィ
スカーによって補強Ｓれるので、製造された炉芯管は十
分な強度を有する。このような肉厚の薄い炉芯管は熱伝
導性が良好であるため、半導体ウェハの熱処理に使用し
た場合に内部の温度分布が均一になる。According to the method of the present invention, silicon carbide fibers having a very small fiber diameter are coated with resin in which silicon carbide powder or whiskers are dispersed, and by winding and forming them, a thin-walled furnace core is formed. A tube-shaped molded body is obtained, and silicon carbide is newly generated by the reaction between the molten silicon and the resin. The silicon carbide fibers have high strength, and the newly generated silicon carbide is also reinforced by the previously attached silicon carbide powder or whiskers, so the manufactured furnace core tube has sufficient strength. Since such a thin-walled furnace core tube has good thermal conductivity, the internal temperature distribution becomes uniform when it is used for heat treatment of semiconductor wafers.
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
まず、繊維径２０ＩＬｍの炭化珪素繊維を炭化珪素粉末
を分散ごせたフェノール樹脂（炭化珪素粉末の含有量は
３０重量％）に浸漬した後、この炭化珪素繊維を巻いて
内径３００ｍｍ、長さ３０００ｍｍの炉芯管の形状に成
形した。この成形体の表面には樹脂がほぼ均一に付着し
ていた。次に、この成形体に熱処理を施して樹脂を硬化
させた。更に、この成形体に１５００℃の溶融シリコン
を含浸させた。First, silicon carbide fibers with a fiber diameter of 20 ILm are immersed in a phenol resin in which silicon carbide powder is dispersed (the content of silicon carbide powder is 30% by weight), and then the silicon carbide fibers are wound to have an inner diameter of 300 mm and a length of 3000 mm. It was molded into the shape of a furnace core tube. The resin adhered almost uniformly to the surface of this molded body. Next, this molded body was heat-treated to harden the resin. Furthermore, this molded body was impregnated with molten silicon at 1500°C.
製造された炭化珪素質炉芯管は、肉厚３．５ｍｍで、強
度が５００ Ｍ Ｐ ａであった。また、拡散炉内で１
０００℃の熱処理に使用した場合、内部の温度分布は±
０．１°Ｃであり良好な均一性を示した。The manufactured silicon carbide furnace core tube had a wall thickness of 3.5 mm and a strength of 500 MPa. In addition, 1
When used for heat treatment at 000℃, the internal temperature distribution is ±
The temperature was 0.1°C, showing good uniformity.
これに対して、従来の方法により製造され、実際に使用
されている炭化珪素質炉芯管は、肉厚７．０ｍｍで、強
度が３００ＭＰａであり、また拡散炉内で１０００℃の
熱処理に使用した場合、内部の温度分布は±０．２°Ｃ
で温度分布が不均一であった。On the other hand, the silicon carbide furnace core tube manufactured by the conventional method and actually used has a wall thickness of 7.0 mm, a strength of 300 MPa, and is used for heat treatment at 1000°C in a diffusion furnace. In this case, the internal temperature distribution is ±0.2°C
The temperature distribution was uneven.
以」二詳述したように本発明方法によれば、肉厚が薄く
、しかも十分な機械的強度を有する炭化珪素質炉芯管を
製造でき、ひいては使用時の内部の温度分布を均一化し
て半導体デバイスの歩留りを向上できる等顕著な効果を
奏するものである。As described in detail below, according to the method of the present invention, a silicon carbide furnace core tube with a thin wall thickness and sufficient mechanical strength can be manufactured, and the internal temperature distribution during use can be made uniform. This has remarkable effects such as improving the yield of semiconductor devices.
出願人代理人 弁理士 鈴社武彦Applicant's agent: Patent attorney Takehiko Suzusha
Claims (2)
分散させた樹脂に浸漬した後、この炭化珪素繊維を巻い
て管状に成形し、この成形体に溶融シリコンを含浸させ
ることを特徴とする炭化珪素質炉芯管の製造方法。(1) Carbonization characterized by immersing silicon carbide fibers in a resin in which silicon carbide powder or whiskers are dispersed, then winding and forming the silicon carbide fibers into a tube shape, and impregnating the formed body with molten silicon. A method for manufacturing a siliceous furnace core tube.
請求の範囲第１項記載の炭化珪素質炉芯管の製造方法。(2) The method for manufacturing a silicon carbide furnace core tube according to claim 1, wherein the resin is a thermosetting resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62289769A JPH01131059A (en) | 1987-11-17 | 1987-11-17 | Production of furnace core tube of silicon carbide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62289769A JPH01131059A (en) | 1987-11-17 | 1987-11-17 | Production of furnace core tube of silicon carbide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01131059A true JPH01131059A (en) | 1989-05-23 |
Family
ID=17747525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62289769A Pending JPH01131059A (en) | 1987-11-17 | 1987-11-17 | Production of furnace core tube of silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01131059A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54112909A (en) * | 1978-02-24 | 1979-09-04 | Kawasaki Heavy Ind Ltd | Silicon carbide composite material |
| JPS61197472A (en) * | 1985-02-27 | 1986-09-01 | 工業技術院長 | Manufacture of sic continuous fiber reinforced sic compositebody |
| JPS627669A (en) * | 1985-07-01 | 1987-01-14 | 東芝セラミツクス株式会社 | Member for semiconductor |
-
1987
- 1987-11-17 JP JP62289769A patent/JPH01131059A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54112909A (en) * | 1978-02-24 | 1979-09-04 | Kawasaki Heavy Ind Ltd | Silicon carbide composite material |
| JPS61197472A (en) * | 1985-02-27 | 1986-09-01 | 工業技術院長 | Manufacture of sic continuous fiber reinforced sic compositebody |
| JPS627669A (en) * | 1985-07-01 | 1987-01-14 | 東芝セラミツクス株式会社 | Member for semiconductor |
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