JPH01130564U - - Google Patents

Info

Publication number

JPH01130564U

JPH01130564U JP2608588U JP2608588U JPH01130564U JP H01130564 U JPH01130564 U JP H01130564U JP 2608588 U JP2608588 U JP 2608588U JP 2608588 U JP2608588 U JP 2608588U JP H01130564 U JPH01130564 U JP H01130564U

Authority

JP

Japan

Prior art keywords

gate insulating

insulating film

amorphous silicon

gate

film

Prior art date

1988-02-29

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
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• 239000010408 film Substances 0.000 claims description 13
• 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
• 239000010409 thin film Substances 0.000 claims description 6
• 239000000758 substrate Substances 0.000 claims description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
• BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
• 229910052814 silicon oxide Inorganic materials 0.000 claims 1
• 229910052715 tantalum Inorganic materials 0.000 claims 1
• GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
• PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 1
• 238000010586 diagram Methods 0.000 description 2
• 230000005669 field effect Effects 0.000 description 1