JPH01128297A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH01128297A
JPH01128297A JP62286705A JP28670587A JPH01128297A JP H01128297 A JPH01128297 A JP H01128297A JP 62286705 A JP62286705 A JP 62286705A JP 28670587 A JP28670587 A JP 28670587A JP H01128297 A JPH01128297 A JP H01128297A
Authority
JP
Japan
Prior art keywords
selector
circuit
defective
memory cell
preliminary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62286705A
Other languages
Japanese (ja)
Other versions
JPH0677400B2 (en
Inventor
Koji Hattori
浩司 服部
Yoshiaki Matsuura
松浦 良昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62286705A priority Critical patent/JPH0677400B2/en
Publication of JPH01128297A publication Critical patent/JPH01128297A/en
Publication of JPH0677400B2 publication Critical patent/JPH0677400B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To reduce a defective generating rate by constituting the selected circuit with the switching of a defective selected circuit to a normal selected circuit when the defective selected circuit exists in the plural selected circuits. CONSTITUTION:When a defective memory MI exists at a position shown in a figure, the fuse link of a selector S3 corresponding to a memory cell array MCI to which the defective memory cell belongs is disconnected. Further, the fuse link of a spare selector SR is disconnected. Thus, the selective signal is outputted as S1 S2 S4 SR, the memory cell array MCI to which the defective memory cell MI belongs is jumped off, and a spare memory cell array MCR is selected instead of it. Thus, the defective generating rate can be reduced.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、複数の被選択回路と、該複数の被選択回路に
順次選択信号を出力する、縦続接続され、た複数のセレ
クタから成るシリアル・セレクタ回路であって、各段セ
レクタは、前段セレクタよりの能動化信号を受け、該能
動化信号により能動化されて上記選択信号を出力すると
共に後段セレクタに能動化信号を出力する構成であるシ
リアル・セレクタ回路とを有する半導体集積回路装置に
関するものであり、特に不良被選択回路を正常な被選択
回路に置き換えるための手段を設けた半導体集積回路装
置を提供するものである。
[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a serial system consisting of a plurality of selected circuits and a plurality of cascade-connected selectors that sequentially output selection signals to the plurality of selected circuits. - The selector circuit is configured such that each stage selector receives an activation signal from a previous stage selector, is activated by the activation signal, outputs the selection signal, and outputs an activation signal to a subsequent stage selector. The present invention relates to a semiconductor integrated circuit device having a serial selector circuit, and particularly to a semiconductor integrated circuit device provided with means for replacing a defective selected circuit with a normal selected circuit.

〈従来の技術〉 まず、従来の半導体集積回路装置の構成をDRAMの場
合を例にとり詳細に説明する。
<Prior Art> First, the configuration of a conventional semiconductor integrated circuit device will be described in detail using a DRAM as an example.

第8図は従来のDRAMの構成図である。FIG. 8 is a block diagram of a conventional DRAM.

図に於いて、MA′はメモリセル・アレイ、RD′ハ行
デコーダ、S A’はセンスアンプ、DI了はデータ保
持回路、T′1.・・・、T′。はNチャネルMOSト
ランジスタ、I O’はI10ポート、ssは、SO信
号入力に基づき上記MO3)ランジスタT1  。
In the figure, MA' is a memory cell array, RD' is a row decoder, SA' is a sense amplifier, DI is a data holding circuit, and T'1. ..., T'. is an N-channel MOS transistor, IO' is the I10 port, and ss is the MO3) transistor T1 based on the SO signal input.

・・・、T′oを順次オンさせる選択信号S’l  +
・・・、S′。
..., selection signal S'l + that turns on T'o sequentially
..., S'.

を出力する、縦続接続されたn個のセレクタS′1゜・
・、S′oから成るシリアル・セレクタ回路C列セレク
タ)である。上記各セレクタの構成を第9図に示す。同
図に於いて、CK’はクロ・ツク信号、R3Tはリセッ
ト信号である。
n cascade-connected selectors S′1°・
, S′o (column C selector). FIG. 9 shows the configuration of each of the above selectors. In the figure, CK' is a clock signal and R3T is a reset signal.

メモリセル・アレイMA′からデータ保持回路DH’に
読み出されたデータは、シリアル・セレクタ回路ss’
より出力される選択信号81  、・・、Snによって
、順次I10ポートI O’に出力される。また、I1
0ポートloよシ順次入力されるデータは、シリアル・
セレクタ回路SS′より出力される選択信号s′1.・
・・、s′oによって、順次データ保持回路DH’に入
力、保持され、その後、メモリセル・アレイMAに書き
込まれる。
The data read from the memory cell array MA' to the data holding circuit DH' is transferred to the serial selector circuit ss'.
The selection signals 81, . Also, I1
The data that is input sequentially from port 0 is serial.
Selection signal s'1. output from selector circuit SS'.・
..., s'o, the data is sequentially input and held in the data holding circuit DH', and then written to the memory cell array MA.

〈発明が解決しようとする問題点〉 従来の半導体集積回路装置をDRAMの場合を例にとり
説明したが、上記従来の半導体集積回路装置に於いては
、複数の被選択回路中に一つでも不良被選択回路が存在
すれば、当該装置は不良品となってしまうという問題点
があった。上記従来のDRAMの場合であれば、メモリ
セル・アレイMA中に1ビツトでも不良メモリセルM′
Iが存在すれば、当該DRAMは不良品となる。
<Problems to be Solved by the Invention> The conventional semiconductor integrated circuit device has been described using a DRAM as an example. There is a problem that if a selected circuit exists, the device becomes a defective product. In the case of the conventional DRAM mentioned above, even one bit of defective memory cell M' exists in the memory cell array MA.
If I exists, the DRAM is defective.

本発明は上記従来の問題点に鑑みてなされたものであり
、複数の被選択回路中に不良被選択回路が存在しても、
該不良被選択回路を正常な被選択ストダウンを図ること
を目的としているものである。
The present invention has been made in view of the above conventional problems, and even if a defective selected circuit exists among a plurality of selected circuits,
The purpose of this is to bring the defective selected circuit down to a normal selected one.

〈問題点を解決するための手段〉 複数の被選択回路と、該複数の被選択回路に順次選択信
号を出力する、縦続接続された複数のセレクタから成る
シリアル・セレクタ回路であって、各段セレクタは、前
段セレクタよりの能動化信号を受け、該能動化信号によ
り能動化されて上記選択信号を出力すると共に後段セレ
クタに能動化信号を出力する構成であるシリアル拳セレ
クタ回路とを有する半導体集積回路装置に於いて、予備
被選択回路及び、能動化信号によって能動化されること
により上記予備被選択回路に選択信号を出力する予備セ
レクタを設け、ヒユーズリンク及び、該ヒユーズリンク
の切断によって、前段セレクタよりの能動化信号による
当該セレクタの能動化を禁止すると共に、上記前段セレ
クタよりの能動化信号を後段セレクタに短絡する切換制
御回路を、上記シリアル・セレクタ回路を構成する各セ
レクタに設けると共に、ヒユーズリンク及び、該ヒユー
ズリンクの切断によって、所定セレクタより入力される
能動化信号による能動化を可能ならしめる切換制御回路
を、上記予備セレクタに設ける。
<Means for solving the problem> A serial selector circuit consisting of a plurality of selected circuits and a plurality of cascade-connected selectors that sequentially output selection signals to the plurality of selected circuits, in which each stage The selector is a semiconductor integrated circuit having a serial selector circuit configured to receive an activation signal from a previous-stage selector, to be activated by the activation signal, and output the selection signal, as well as to output an activation signal to a subsequent-stage selector. The circuit device is provided with a preliminary selected circuit and a preliminary selector that outputs a selection signal to the preliminary selected circuit when activated by an activation signal, and a fuse link, and by disconnecting the fuse link, a preliminary selector is provided. Providing each selector constituting the serial selector circuit with a switching control circuit that prohibits activation of the selector by an activation signal from the selector and short-circuits the activation signal from the preceding selector to the subsequent selector; The preliminary selector is provided with a fuse link and a switching control circuit that enables activation by an activation signal input from a predetermined selector by disconnecting the fuse link.

く作用〉 不良被選択回路に対応するセレクタのヒユーズリンクを
切断することによって、当該セレクタが飛び越される。
Effect> By cutting the fuse link of the selector corresponding to the defective selected circuit, the selector is skipped.

これによって、上記不良被選択回路への選択信号出力が
禁止され、該回路は非選択となる。一方、予備セレクタ
のヒユーズリンクを切断することによって、不活性であ
った当該予備セレクタが活性化される。これによって、
選択を禁止されていた予備被選択回路が選択されるよう
になり、」定記不良被選択回路の非選択を補填する。
As a result, output of the selection signal to the defective selected circuit is prohibited, and the circuit becomes non-selected. On the other hand, by disconnecting the fuse link of the spare selector, the inactive spare selector is activated. by this,
The preliminary selected circuit whose selection was prohibited is now selected, thereby compensating for the non-selection of the specified defective selected circuit.

〈実施例〉 以下、実施例に基づいて本発明の詳細な説明する。<Example> Hereinafter, the present invention will be described in detail based on Examples.

第2図は本発明の一実施例であるDRAMの構成図であ
る。捷た、第1図は同DRAMに於けるシリアル・セレ
クタ回路SSの構成図である。第1図に於いて、CKは
クロック信号、R3Tはリセット信号である。
FIG. 2 is a block diagram of a DRAM which is an embodiment of the present invention. FIG. 1 is a block diagram of the serial selector circuit SS in the same DRAM. In FIG. 1, CK is a clock signal and R3T is a reset signal.

図に於いて、MAはメモリセル・アレイ、MCRはメモ
リセル・アレイM Aに含まれる予備メモリセル列、R
Dは行デコーダ、SAはセンスアンプ、DHはデータ保
持回路、TI+’・・+ Tn + TRはNチャネル
MOSトランジスタ、IOはI10ボートである。SS
は縦続接続されたn個のセレクタSl  、・・、Sn
及び予備セレクタSRから成るシシリアル・セレクタ回
路(列セレクタ)である。
In the figure, MA is a memory cell array, MCR is a spare memory cell column included in the memory cell array MA, and R
D is a row decoder, SA is a sense amplifier, DH is a data holding circuit, TI+'...+Tn+TR is an N-channel MOS transistor, and IO is an I10 port. S.S.
is n selectors Sl,...,Sn connected in cascade
and a spare selector SR.

上記各セレクタSl  、・・・、So及びsR中のヒ
ユーズリンクFl  、・・・、Fo及びFRがすべて
非切断であるときは、シリアル・セレクタ回路SSは、
so信号入力に基づき、」−記MO5)ランジスタTl
  、・・・、Tnを順次オンさせる選択信号Sl  
+・・、snを出力する。この場合、予備セレクタsR
よりの選択信号出力は無い。上記各セレクタSI+・・
、Sn中のヒユーズリンクFl  、・・・、Fnの内
の1つFk及び予備セレクタS2中のヒユーズリンクF
Rが切断されており、他のヒユーズリンクがすべて非切
断であるときは、シリアル・セレクタ回路SSは、So
信号入力に基づき、上記MOSトランジスタTl、 ”
’ + Tk−1+ Tk+1 、”・、Tn。
When the fuse links Fl,..., Fo, and FR in each of the selectors Sl,..., So, and sR are all not disconnected, the serial selector circuit SS is
Based on the so signal input, the transistor Tl
,..., a selection signal Sl that sequentially turns on Tn.
+..., sn is output. In this case, the spare selector sR
There is no selection signal output. Each of the above selectors SI+...
, one of the fuse links Fl in Sn, . . . , Fk of Fn and the fuse link F in the preliminary selector S2
When R is disconnected and all other fuse links are disconnected, the serial selector circuit SS
Based on the signal input, the MOS transistor Tl, ”
'+Tk-1+Tk+1,''・,Tn.

TRを順次オンさせる選択信号SI+ ・・+ 81(
−ItSk+I+・・+Sl’l+SRを出力する。こ
の場合、セレクタSkよりの選択信号出力は無い。
Selection signal SI+...+81(
-ItSk+I+...+Sl'l+SR is output. In this case, there is no selection signal output from selector Sk.

不良メモリセルMIが第2図に示す位置に存在するとき
は、該不良メモリセルが属するメモリセル列MCIに対
応しているセレクタS3のヒユーズリンクF3を切断す
る。また、予備セレクタSRのヒユーズリンクFRを切
断する。これにより、選択信号出力は、Sl−+S2→
S4→・・・→Sn−+SRとなり、不良メモリセルM
Iの属するメモリセル列MCIは飛び越され、代わりに
、予備メチリセル列MCRが選択されることになる。
When the defective memory cell MI exists at the position shown in FIG. 2, the fuse link F3 of the selector S3 corresponding to the memory cell column MCI to which the defective memory cell belongs is cut. Also, the fuse link FR of the spare selector SR is disconnected. As a result, the selection signal output becomes Sl−+S2→
S4→...→Sn-+SR, defective memory cell M
The memory cell column MCI to which I belongs is skipped, and the spare methyl cell column MCR is selected instead.

行方向にもシリアル・アクセスされるDRAMの場合は
、予備メモリセル行を設けると共に、行デコーダとして
、上記シリアル・セレクタ回路SSと同様の構成の回路
を設ける様にしてもよい。
In the case of a DRAM that is serially accessed also in the row direction, a spare memory cell row may be provided, and a circuit having the same configuration as the serial selector circuit SS described above may be provided as a row decoder.

次に第2の実施例を説明する。Next, a second embodiment will be described.

図及び第5図は、それぞれシリアル・セレクタ回路SS
を構成するセレクタsi (i=’ +・−+ n)及
び予備セレクタ5Rj(j=1.2)の構成図である。
5 and 5 respectively show the serial selector circuit SS
FIG. 2 is a configuration diagram of a selector si (i=' +.-+ n) and a spare selector 5Rj (j=1.2) that constitute the.

図に於いて、CL、CLはクロック信号である。また、
第4図及び第5図に於けるMOS)ランシスタは総てN
チャネルMOS)ランジスタである。
In the figure, CL and CL are clock signals. Also,
MOS) run transistors in Figures 4 and 5 are all N.
channel MOS) transistor.

上記各セレクタSl  、・・・、So及び予備セレク
タSR1,SR2中のヒユーズリンクFI+”’+Fn
及びFRI 、 FR2がすべて非切断であるときは、
シリアル・セレクタ回路SSは、SQ信号入力に基づき
、順次位相のずれた選択信号S11+・・・+ 312
を出力する。この場合、予備セレクタSRI、SR2よ
りの選択信号出力はない。
Fuse links FI+"'+Fn in each of the above selectors SL, . . . , So and spare selectors SR1 and SR2
When FRI and FR2 are all uncleaved,
The serial selector circuit SS sequentially outputs phase-shifted selection signals S11+...+312 based on the SQ signal input.
Output. In this case, there is no selection signal output from the preliminary selectors SRI and SR2.

このときのタイムチャートを第6図に示す。A time chart at this time is shown in FIG.

上記各セレクタSl 、・・・、Sn中のヒユーズリン
クFl  、・・・、Fnの内の一つFk及び予備セレ
クタSl又はSR2中のヒユーズリンクFRI又はFR
2が切断されており、他のヒユーズリンクがすべて非切
断であるときは、シリアル・セレクタ回路SSは、SQ
信号入力に基づき、順次位相のずれた選択信号S Il
+ 312+”’+ 5(k−1)I+S(k  I)
2+”(k+I)I 、”(k+1)21”’+SHI
 +Sn2.sR+1(又はS R2+) l S R
+2(又はS R22)を出力する。この場合、セレク
タSk及び予備セレクタ5R2(又は5RI)よりの選
択信号出力は無い。
One Fk of the fuse links Fl,..., Fn in each of the selectors Sl,..., Sn and the fuse link FRI or FR in the spare selector Sl or SR2.
2 is disconnected and all other fuse links are disconnected, the serial selector circuit SS
Based on the signal input, the selection signal S Il is sequentially phase-shifted.
+ 312+”'+ 5(k-1)I+S(k I)
2+”(k+I)I,”(k+1)21”’+SHI
+Sn2. sR+1 (or S R2+) l S R
+2 (or S R22) is output. In this case, there is no selection signal output from selector Sk and reserve selector 5R2 (or 5RI).

セレクタS2中のヒユーズリンクF2及び予備セレクタ
S2中のヒユーズリンクFRIが切断されている場合の
タイムチャートを第7図に示す。
FIG. 7 shows a time chart when the fuse link F2 in the selector S2 and the fuse link FRI in the preliminary selector S2 are disconnected.

〈発明の効果〉 以下詳細に説明したように本発明によれば、複数の被選
択回路中に不良被選択回路が存在しても、該不良被選択
回路を正常な被選択回路に置き換えることが可能となり
、不良発生率の低下、歩留り向上、コストダウンを図る
ことができるものである0
<Effects of the Invention> As explained in detail below, according to the present invention, even if a defective selected circuit exists among a plurality of selected circuits, the defective selected circuit can be replaced with a normal selected circuit. This makes it possible to reduce defective rates, improve yields, and reduce costs.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は回路構成図、第2図はブロック図、第3図はブ
ロック図、第4図は回路構成図、第5図は回路構成図、
第6図はタイムチャート、第7図はタイムチャート、第
8図はブロック図、第9図は回路構成図である。 符号の説明 MA:メモリセル・アレイ、MCR:予備メモリセル列
、MI :不良メモリセル、RD:行デコーダ、SA:
センスアンプ、DH:データ保持回路、” I  + 
”’ + TQ + TR”チャネルMO3)ランジス
タ、I O: I10ポート、SSニジリアル・セレク
タ回路、Sl 、・・、Sn :セレクタ、5R9SR
I + SR2’予備セレクタ、F]  + ”’+F
n + FR+FR1+ FR2’ヒユーズリンク、s
l  +”’+ sl  +SR:選択信号、811 
+ ”’ T Sn2+ SRI++ ”’ +5R2
2:選択信号。 代理人 弁理士 杉 山 毅 至(他1名)、9R 9図
Figure 1 is a circuit configuration diagram, Figure 2 is a block diagram, Figure 3 is a block diagram, Figure 4 is a circuit configuration diagram, Figure 5 is a circuit configuration diagram,
FIG. 6 is a time chart, FIG. 7 is a time chart, FIG. 8 is a block diagram, and FIG. 9 is a circuit configuration diagram. Description of symbols MA: memory cell array, MCR: spare memory cell column, MI: defective memory cell, RD: row decoder, SA:
Sense amplifier, DH: data holding circuit, "I +
"' + TQ + TR" channel MO3) transistor, IO: I10 port, SS serial selector circuit, Sl,..., Sn: selector, 5R9SR
I + SR2' spare selector, F] + "'+F
n + FR+FR1+ FR2' fuse link, s
l +”'+ sl +SR: selection signal, 811
+ ”' T Sn2+ SRI++ ”' +5R2
2: Selection signal. Agent: Patent attorney Takeshi Sugiyama (and 1 other person), 9R, Figure 9

Claims (1)

【特許請求の範囲】 1、複数の被選択回路と、 該複数の被選択回路に順次選択信号を出力する、縦続接
続された複数のセレクタから成るシリアル・セレクタ回
路であって、各段セレクタは、前段セレクタよりの能動
化信号を受け、該能動化信号により能動化されて上記選
択信号を出力すると共に後段セレクタに能動化信号を出
力する構成であるシリアル・セレクタ回路とを有する半
導体集積回路装置に於いて、 予備被選択回路及び、能動化信号によって能動化される
ことにより上記予備被選択回路に選択信号を出力する予
備セレクタを設け、 ヒューズリンク及び、該ヒューズリンクの切断によって
、前段セレクタよりの能動化信号による当該セレクタの
能動化を禁止すると共に、上記前段セレクタよりの能動
化信号を後段セレクタに短絡する切換制御回路を、上記
シリアル・セレクタ回路を構成する各セレクタに設ける
と共に、 ヒューズリンク及び、該ヒューズリンクの切断によって
、所定セレクタより入力される能動化信号による能動化
を可能ならしめる切換制御回路を、上記予備セレクタに
設けたことを特徴とする半導体集積回路装置。
[Claims] 1. A serial selector circuit consisting of a plurality of selected circuits and a plurality of cascade-connected selectors that sequentially output selection signals to the plurality of selected circuits, wherein each stage selector , a serial selector circuit configured to receive an activation signal from a pre-stage selector, be activated by the activation signal, output the selection signal, and output an activation signal to a subsequent-stage selector. A preliminary selected circuit and a preliminary selector that outputs a selection signal to the preliminary selected circuit by being activated by an activation signal are provided, and a fuse link, and when the fuse link is disconnected, a preliminary selector is provided that outputs a selection signal to the preliminary selected circuit. Each selector constituting the serial selector circuit is provided with a switching control circuit that prohibits activation of the selector by the activation signal of the serial selector and short-circuits the activation signal from the preceding selector to the subsequent selector, and a fuse link. and a semiconductor integrated circuit device characterized in that the preliminary selector is provided with a switching control circuit that enables activation by an activation signal input from a predetermined selector by disconnecting the fuse link.
JP62286705A 1987-11-12 1987-11-12 Semiconductor integrated circuit device Expired - Fee Related JPH0677400B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62286705A JPH0677400B2 (en) 1987-11-12 1987-11-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62286705A JPH0677400B2 (en) 1987-11-12 1987-11-12 Semiconductor integrated circuit device

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JPH01128297A true JPH01128297A (en) 1989-05-19
JPH0677400B2 JPH0677400B2 (en) 1994-09-28

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612892A (en) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp Semiconductor storage device
JPH0628845A (en) * 1992-02-20 1994-02-04 Toshiba Corp Semiconductor storage device
WO2005066975A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US6985388B2 (en) 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7379330B2 (en) 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9748001B2 (en) 2009-07-06 2017-08-29 Sandisk Technologies Llc Bad column management with bit information in non-volatile memory systems
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142800A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Semiconductor storage device
JPS6120300A (en) * 1984-07-09 1986-01-29 Hitachi Ltd Semiconductor memory having defect remedying circuit
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142800A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Semiconductor storage device
JPS6120300A (en) * 1984-07-09 1986-01-29 Hitachi Ltd Semiconductor memory having defect remedying circuit
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628845A (en) * 1992-02-20 1994-02-04 Toshiba Corp Semiconductor storage device
JPH0612892A (en) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp Semiconductor storage device
US6985388B2 (en) 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7586793B2 (en) 2001-09-17 2009-09-08 Sandisk Corporation Dynamic column block selection
US7768841B2 (en) 2001-09-17 2010-08-03 Sandisk Corporation Dynamic column block selection
WO2005066975A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7170802B2 (en) 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7405985B2 (en) 2003-12-31 2008-07-29 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7379330B2 (en) 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US7447066B2 (en) 2005-11-08 2008-11-04 Sandisk Corporation Memory with retargetable memory cell redundancy
US9748001B2 (en) 2009-07-06 2017-08-29 Sandisk Technologies Llc Bad column management with bit information in non-volatile memory systems
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects

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