JPH01128297A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH01128297A
JPH01128297A JP28670587A JP28670587A JPH01128297A JP H01128297 A JPH01128297 A JP H01128297A JP 28670587 A JP28670587 A JP 28670587A JP 28670587 A JP28670587 A JP 28670587A JP H01128297 A JPH01128297 A JP H01128297A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
defective
selected
memory
cell
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28670587A
Other versions
JPH0677400B2 (en )
Inventor
Koji Hattori
Yoshiaki Matsuura
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce a defective generating rate by constituting the selected circuit with the switching of a defective selected circuit to a normal selected circuit when the defective selected circuit exists in the plural selected circuits.
CONSTITUTION: When a defective memory MI exists at a position shown in a figure, the fuse link of a selector S3 corresponding to a memory cell array MCI to which the defective memory cell belongs is disconnected. Further, the fuse link of a spare selector SR is disconnected. Thus, the selective signal is outputted as S1→S2→S4→SR, the memory cell array MCI to which the defective memory cell MI belongs is jumped off, and a spare memory cell array MCR is selected instead of it. Thus, the defective generating rate can be reduced.
COPYRIGHT: (C)1989,JPO&Japio
JP28670587A 1987-11-12 1987-11-12 The semiconductor integrated circuit device Expired - Fee Related JPH0677400B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28670587A JPH0677400B2 (en) 1987-11-12 1987-11-12 The semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28670587A JPH0677400B2 (en) 1987-11-12 1987-11-12 The semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPH01128297A true true JPH01128297A (en) 1989-05-19
JPH0677400B2 JPH0677400B2 (en) 1994-09-28

Family

ID=17707924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28670587A Expired - Fee Related JPH0677400B2 (en) 1987-11-12 1987-11-12 The semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH0677400B2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612892A (en) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp Semiconductor storage device
JPH0628845A (en) * 1992-02-20 1994-02-04 Toshiba Corp Semiconductor storage device
WO2005066975A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US6985388B2 (en) 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7379330B2 (en) 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9748001B2 (en) 2009-07-06 2017-08-29 Sandisk Technologies Llc Bad column management with bit information in non-volatile memory systems
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142800A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Semiconductor storage device
JPS6120300A (en) * 1984-07-09 1986-01-29 Hitachi Ltd Semiconductor memory having defect remedying circuit
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142800A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Semiconductor storage device
JPS6120300A (en) * 1984-07-09 1986-01-29 Hitachi Ltd Semiconductor memory having defect remedying circuit
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628845A (en) * 1992-02-20 1994-02-04 Toshiba Corp Semiconductor storage device
JPH0612892A (en) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp Semiconductor storage device
US7586793B2 (en) 2001-09-17 2009-09-08 Sandisk Corporation Dynamic column block selection
US6985388B2 (en) 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7768841B2 (en) 2001-09-17 2010-08-03 Sandisk Corporation Dynamic column block selection
US7405985B2 (en) 2003-12-31 2008-07-29 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
WO2005066975A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7170802B2 (en) 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7379330B2 (en) 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US7447066B2 (en) 2005-11-08 2008-11-04 Sandisk Corporation Memory with retargetable memory cell redundancy
US9748001B2 (en) 2009-07-06 2017-08-29 Sandisk Technologies Llc Bad column management with bit information in non-volatile memory systems
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects

Also Published As

Publication number Publication date Type
JP1945019C (en) grant
JPH0677400B2 (en) 1994-09-28 grant

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Legal Events

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