New! Search for patents from more than 100 countries including Australia, Brazil, Sweden and more

JPH01128297A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH01128297A
JPH01128297A JP62286705A JP28670587A JPH01128297A JP H01128297 A JPH01128297 A JP H01128297A JP 62286705 A JP62286705 A JP 62286705A JP 28670587 A JP28670587 A JP 28670587A JP H01128297 A JPH01128297 A JP H01128297A
Authority
JP
Japan
Prior art keywords
defective
memory cell
selected
selected circuit
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62286705A
Other versions
JPH0677400B2 (en
Inventor
Koji Hattori
Yoshiaki Matsuura
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62286705A priority Critical patent/JPH0677400B2/en
Publication of JPH01128297A publication Critical patent/JPH01128297A/en
Publication of JPH0677400B2 publication Critical patent/JPH0677400B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To reduce a defective generating rate by constituting the selected circuit with the switching of a defective selected circuit to a normal selected circuit when the defective selected circuit exists in the plural selected circuits.
CONSTITUTION: When a defective memory MI exists at a position shown in a figure, the fuse link of a selector S3 corresponding to a memory cell array MCI to which the defective memory cell belongs is disconnected. Further, the fuse link of a spare selector SR is disconnected. Thus, the selective signal is outputted as S1→S2→S4→SR, the memory cell array MCI to which the defective memory cell MI belongs is jumped off, and a spare memory cell array MCR is selected instead of it. Thus, the defective generating rate can be reduced.
COPYRIGHT: (C)1989,JPO&Japio
JP62286705A 1987-11-12 1987-11-12 The semiconductor integrated circuit device Expired - Fee Related JPH0677400B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62286705A JPH0677400B2 (en) 1987-11-12 1987-11-12 The semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62286705A JPH0677400B2 (en) 1987-11-12 1987-11-12 The semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPH01128297A true JPH01128297A (en) 1989-05-19
JPH0677400B2 JPH0677400B2 (en) 1994-09-28

Family

ID=17707924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62286705A Expired - Fee Related JPH0677400B2 (en) 1987-11-12 1987-11-12 The semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH0677400B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612892A (en) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp Semiconductor storage device
JPH0628845A (en) * 1992-02-20 1994-02-04 Toshiba Corp Semiconductor storage device
WO2005066975A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US6985388B2 (en) 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7379330B2 (en) 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9748001B2 (en) 2009-07-06 2017-08-29 Sandisk Technologies Llc Bad column management with bit information in non-volatile memory systems
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142800A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Semiconductor storage device
JPS6120300A (en) * 1984-07-09 1986-01-29 Hitachi Ltd Semiconductor memory having defect remedying circuit
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142800A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Semiconductor storage device
JPS6120300A (en) * 1984-07-09 1986-01-29 Hitachi Ltd Semiconductor memory having defect remedying circuit
JPS6161300A (en) * 1984-09-03 1986-03-29 Hitachi Ltd Defect relief circuit

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628845A (en) * 1992-02-20 1994-02-04 Toshiba Corp Semiconductor storage device
JPH0612892A (en) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp Semiconductor storage device
US7586793B2 (en) 2001-09-17 2009-09-08 Sandisk Corporation Dynamic column block selection
US6985388B2 (en) 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7768841B2 (en) 2001-09-17 2010-08-03 Sandisk Corporation Dynamic column block selection
US7405985B2 (en) 2003-12-31 2008-07-29 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
WO2005066975A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7170802B2 (en) 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US7379330B2 (en) 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US7447066B2 (en) 2005-11-08 2008-11-04 Sandisk Corporation Memory with retargetable memory cell redundancy
US9748001B2 (en) 2009-07-06 2017-08-29 Sandisk Technologies Llc Bad column management with bit information in non-volatile memory systems
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects

Also Published As

Publication number Publication date
JPH0677400B2 (en) 1994-09-28

Similar Documents

Publication Publication Date Title
JPH03214669A (en) Semiconductor storage device and redundant memory repair method
JPH02119241A (en) Semiconductor integrated circuit device
JPS62177794A (en) Semiconductor memory cell
JPS6199999A (en) Semiconductor storage device
JPH02116084A (en) Semiconductor memory
JPH0373497A (en) Non-volatile semiconductor memory device
JPS63205890A (en) Semiconductor memory device
JPH03175720A (en) Semiconductor integrated circuit
JPS589488A (en) Reset mechanism of central arithmetic processor of system having plural central arithmetic processors
JPH0250396A (en) Semiconductor memory
JPH0380500A (en) Semiconductor storage device
JPS58125299A (en) Memory device with redundancy
JPS61267993A (en) Semiconductor memory
JPH04159696A (en) Nonvolatile semiconductor memory
JPH02201800A (en) Semiconductor storage device
JPS60103469A (en) Redundant part of semiconductor memory
JPH02192100A (en) Semiconductor memory device with defect relieve circuit
JPH01128297A (en) Semiconductor integrated circuit device
JPS6379300A (en) Semiconductor storage device
JPH02168494A (en) Semiconductor storage circuit
JPH02208898A (en) Semiconductor memory
JPH0464990A (en) Dual port memory
JPH0287550A (en) Master slice type semiconductor integrated circuit
JPS60145641A (en) Semiconductor integrated circuit device
JPH038200A (en) Failure bit relieving circuit for semiconductor memory

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees