JPH011268A - ceramic circuit board - Google Patents
ceramic circuit boardInfo
- Publication number
- JPH011268A JPH011268A JP62-156197A JP15619787A JPH011268A JP H011268 A JPH011268 A JP H011268A JP 15619787 A JP15619787 A JP 15619787A JP H011268 A JPH011268 A JP H011268A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- ceramic
- ceramic circuit
- conductor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000004020 conductor Substances 0.000 claims description 28
- 238000005219 brazing Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 1
- 239000000843 powder Substances 0.000 description 10
- 229910017944 Ag—Cu Inorganic materials 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 229910052878 cordierite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017770 Cu—Ag Inorganic materials 0.000 description 1
- 101100108073 Drosophila melanogaster Actn gene Proteins 0.000 description 1
- -1 Heg Chemical class 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 101150017109 fliA gene Proteins 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
イ6発明の目的
産業上の利用分野
本発明は民生用やコンピューター用等の電子工業に用い
られるセラミックスの多層配線基板に関する。DETAILED DESCRIPTION OF THE INVENTION A.6 Object of the Invention Industrial Application Field The present invention relates to a ceramic multilayer wiring board used in the electronic industry such as consumer products and computers.
従来技術
従来電子機器類に使用する回路基板としてセラミックス
を絶縁体として使用した配線基板が使用されてきた。そ
の代表的なものとして、WやNoを配線用導体として使
用し、導体が酸化しないように還元雰囲気で焼成する導
体同時焼成セラミック配線基板がある。しかしながらこ
の基板は導体に讐やMOを使用するので、導通抵抗が1
0〜20m ohm /口と高く、又LSIなど半導体
素子を実装したり、部品のハンダ付けを可能にする為に
N1メツキやAuメツキの後処理が必要であだ。BACKGROUND ART Conventionally, wiring boards using ceramics as an insulator have been used as circuit boards for electronic devices. A typical example is a conductor-co-fired ceramic wiring board that uses W or No as a wiring conductor and is fired in a reducing atmosphere to prevent the conductor from oxidizing. However, since this board uses metal or MO for the conductor, the conduction resistance is 1.
It is high at 0 to 20m ohm/mouth, and requires post-processing of N1 plating and Au plating to enable mounting of semiconductor elements such as LSI and soldering of parts.
?[走通これらの問題を解決するためにAg系、Au系
、Cu系などの導通抵抗が小さな導体材料を使用しく以
ドこれ等を低融点金属という)、これらの材料の融点以
ドの温度(800〜1100’C)で焼成できるセラミ
ック材料を絶縁体と・ して用いた導体を同時に焼成
する低温焼成セラミック配線基板が開発されている。
従来のアルミナセラミックス基板の場合は、入出力端子
(■10端子)としてNo又は−の導体バンド]−にN
iをメツキし、この後コバール又は4.2合金のピンも
しくはリードをAg−Cuろう材を使用してろう付けし
ていた。しかしながら低温焼成基板の場合は導体として
へg、Au、C:u系の低融点金属を主体に使用する為
にこれらの金属は−やMOより耐熱性が劣るのでろう材
処理中にろう材中に溶解し強度を得ることができなかっ
た。従って、低温焼成ノ、(板の場合I10端子用のピ
ンやリードは、ハンダにより接続するのが一般的である
。ハンダの問題点としては耐熱温度が150〜200℃
と低くハンダ付けした後は低温で処理できる工程しか行
なえない。たとえばSiチンブのワイヤボンディングを
サーモソニックで行なうと基板温度は200℃以トにも
なってしまう。このようにハンダを使用した場合その後
の作業方法が温度の面から限定されてしまい、実用性が
大幅に低下する。この対策として特開昭Go−1787
61においてはチタン薄膜上に周期率表8属の金属膜を
有するパッドを置きその上にピンをろう付する方法を開
示している。この方法ではろう材料にAuの含有率が8
0%と多いAu−9n系のろう材を使用しているので固
くてもろく、強度がAg−Cuろうより弱く又コストが
高いという問題がある。? [In order to solve these problems, conductive materials with low conduction resistance such as Ag, Au, and Cu are used.These are hereinafter referred to as low melting point metals.]The temperature below the melting point of these materials is A low-temperature fired ceramic wiring board has been developed in which a conductor is simultaneously fired using a ceramic material which can be fired at (800 to 1100'C) as an insulator.
In the case of a conventional alumina ceramics board, the input/output terminal (■10 terminal) is a conductor band of No or -.
After that, Kovar or 4.2 alloy pins or leads were brazed using Ag-Cu brazing material. However, in the case of low-temperature fired substrates, since low melting point metals such as Heg, Au, and C:U are mainly used as conductors, these metals have inferior heat resistance than - and MO, so they are It was not possible to obtain strength due to dissolution. Therefore, in the case of low-temperature firing, pins and leads for I10 terminals are generally connected with solder.
After soldering, only processes that can be performed at low temperatures can be performed. For example, if wire bonding of Si chips is performed using thermosonics, the substrate temperature will rise to over 200°C. When solder is used in this way, subsequent working methods are limited in terms of temperature, which greatly reduces practicality. As a countermeasure to this problem, JP-A-Sho Go-1787
No. 61 discloses a method in which a pad having a metal film belonging to group 8 of the periodic table is placed on a titanium thin film and a pin is brazed thereon. In this method, the content of Au in the brazing material is 8
Since it uses a large amount of Au-9n brazing material (0%), it is hard and brittle, has lower strength than Ag-Cu brazing material, and is expensive.
又アルミナ基板の七に薄膜を形成しAg−Cuろうを使
用1−1ろう付けする方法も知られているがMo、Wの
導体を同時焼成しる場合に使用するアルミナ基板は一般
に表面粗さが悪く、薄膜を形成するのが困難であった。Another known method is to form a thin film on the surface of an alumina substrate and perform 1-1 brazing using Ag-Cu solder, but the alumina substrate used when co-firing Mo and W conductors generally has a rough surface. It was difficult to form a thin film.
発明が解決しようとする問題点
本発明はAg、Au、Cu系の導体を有する低温焼結)
、(板トにこれらの導体と結合している金属パッドにA
g−Cu系のろう材を使用してI10端r−川のピンや
リードを接続したセラミックス回路基板を提供すること
である。Problems to be Solved by the Invention The present invention is characterized by low temperature sintering with Ag, Au, and Cu-based conductors.
, (A to the metal pads connected to these conductors on the plate)
It is an object of the present invention to provide a ceramic circuit board in which pins and leads at the I10 end and r-river are connected using a g-Cu type brazing material.
口1発明の構成
問題点を解決するための手段
本発明は800〜1100℃で焼成され内部に低融点金
属導体による回路配線を有する基板りに1z(脱法よっ
て形成された金属層の−LにI10端子用のピンもしく
はリードを、Cuを含むろう材により結合した構造をも
つことを特徴とするセラミックス回路基板である。なお
低温焼成基板は原材料に多量のガラス成分を含むので表
面粗さが良く薄膜形成に適する利点を右する。Means for Solving the Problems in the Structure of the Invention The present invention is based on a method for solving the problem of the structure of the invention. This is a ceramic circuit board characterized by a structure in which pins or leads for I10 terminals are bonded by a brazing material containing Cu.The low temperature fired board contains a large amount of glass component in its raw materials, so it has a good surface roughness. Advantages suitable for thin film formation.
金属層として周期率表の4A、5AJA、8.IB属の
金属及びこれ等の組合はせからなることを特徴としてい
る。さらにセラミックスノ^板材ネ゛1中のPbOは1
玉ら¥2以ドでろう材処理温度は600℃以1−の中性
又は5光性雰囲気で処理することを特徴としている。
特開昭Go−178761に開示されたろうイ・1方法
の問題点は、ろう材に強度が弱くて高価なAu−5n系
の材料を使用する点にある。本発明はろう材として強度
が強くて安価なAg−Cu系のろうを使用する。Ag−
Cu系のろう材を使用するためAu−3n系のろう材の
約400℃に比較してろう材処理温度は高くなる。Ag
−Guの共晶温度は779℃であるから、ろう材の処理
温度はこれより高くなる。Zn、Bi、等の第3.4成
分を加えれば処理温度は低くなるが800℃以[二の処
理温度は必要である。この処理温度ではAg−Cuろう
中のCuが酸化しないようにろう材処理に際して中性も
しくは還元性雰囲気で行なう必要がある。このろう材処
理に際しては中性もしくはQ元性雰囲気はセラミック基
板にPbO成分が含まれているとPbOを還元させて基
板の絶縁性を劣化させる。従ってセラミックス基板材料
のPbO成分は1z以ドとし、好ましくはL5$以ドが
良い。すなわち使用する基板としてはノ、(末的にpb
oを含まず800〜1100℃で焼成できるもので表面
粗さが良好なものであれば良い。その代表的なものとし
てホウケイ酸ガラスや更に数種類の酸化物(例えばMg
O。4A, 5AJA, 8. of the periodic table as a metal layer. It is characterized by being made of IB metal and a combination of metals. Furthermore, PbO in ceramic plate material N1 is 1.
The brazing material is characterized by being processed in a neutral or 5-light atmosphere at a temperature of 600°C or higher.
The problem with the brazing I-1 method disclosed in Japanese Patent Application Laid-Open No. 178761 is that it uses a weak and expensive Au-5n material as the brazing filler metal. In the present invention, a strong and inexpensive Ag-Cu based brazing material is used as the brazing material. Ag-
Since a Cu-based brazing material is used, the brazing material processing temperature is higher than approximately 400° C. for an Au-3n-based brazing material. Ag
- Since the eutectic temperature of Gu is 779°C, the processing temperature of the brazing filler metal is higher than this. Although the treatment temperature can be lowered by adding the 3.4th component such as Zn, Bi, etc., the second treatment temperature is required to be 800° C. or higher. At this processing temperature, it is necessary to perform the brazing material treatment in a neutral or reducing atmosphere so that the Cu in the Ag--Cu solder does not oxidize. During this brazing filler metal treatment, if the ceramic substrate contains a PbO component, the neutral or Q-element atmosphere reduces the PbO and deteriorates the insulation properties of the substrate. Therefore, the PbO component of the ceramic substrate material should be less than 1z, preferably less than L5. In other words, the substrate to be used is (ultimately pb
Any material may be used as long as it does not contain o and can be fired at 800 to 1100° C. and has good surface roughness. Typical examples include borosilicate glass and several other oxides (such as Mg
O.
SrO,CaO,BaO,AI OK O,Na O,
ZnO,Li2O,Zr2023’2 2
、Tl02)を含むガラス粉末とアルミナ、石英、酸化
クロム、ムライト、コージュライトなどのセラミック粉
末の混合物を原料とするものや、コージュライト系、α
スボジュメン系の結晶が生ずる結晶化ガラス粉末を原料
にするものがある。例えば本発明者等の出願に係る特願
昭59−110973号、特願昭Go−83725号、
特願昭EiO−237458号、特願昭6O−282E
i88号はかかる材料の一例であり、これらの材料の不
純物としてPbOが1%以下が適する。これらの基板の
表面粗さRaは0.05〜0.4ルmでありこの用途に
適する。一方通常のW、Mo導体を回持焼成するのに使
用されるアルミナ基板の場合はRaが0.4〜1.Op
−mと大きく場合によっては研磨を必要とする。SrO, CaO, BaO, AI OK O, Na O,
Those made from a mixture of glass powder containing ZnO, Li2O, Zr2023'2 2, Tl02) and ceramic powder such as alumina, quartz, chromium oxide, mullite, cordierite, cordierite type, α
Some are made from crystallized glass powder that produces subodumene crystals. For example, Japanese Patent Application No. 59-110973, Japanese Patent Application No. 83725 filed by the present inventors,
Patent application No. Sho EiO-237458, Patent application No. Sho 6O-282E
No. i88 is an example of such materials, and these materials suitably contain 1% or less of PbO as an impurity. These substrates have a surface roughness Ra of 0.05 to 0.4 m and are suitable for this use. On the other hand, in the case of an alumina substrate used for recirculating firing of ordinary W and Mo conductors, Ra is 0.4 to 1. Op
-m, which may require polishing in some cases.
Ag−Cu系ろう材の処理温度では低温焼成基板に使用
するAg系、Au系、Cu系の導体がろう付処理中にろ
う材に溶解してしまうので付着強度が劣化し、ビンやリ
ードに必要な接着強度が得られない。本発明ではろう付
処理する金属パッドを耐熱金属よりなる薄膜に形成して
Ag−C:uろう付処理に耐えられるようにして又セ
ラミックスの付着性に優れたものや、Ag−Cuろう材
との濡れ性に優れた金属を組合わせる。これらの薄膜に
使用する金属としては周期率表の4A、5A、fliA
、 8.IB族の中より選択する。At the processing temperature of Ag-Cu brazing filler metal, the Ag, Au, and Cu conductors used in low-temperature fired substrates will dissolve into the brazing filler metal during the brazing process, resulting in a decrease in adhesive strength and damage to bottles and leads. The required adhesive strength cannot be obtained. In the present invention, the metal pad to be brazed is formed into a thin film made of a heat-resistant metal so that it can withstand Ag-C:U brazing processing, and it is also made of a thin film made of a heat-resistant metal, which has excellent adhesion to ceramics, or a thin film made of a heat-resistant metal. Combining metals with excellent wettability. The metals used for these thin films include 4A, 5A, and fliA on the periodic table.
, 8. Select from group IB.
薄膜の形成方法としてはスパッタリング、ノ入着、メツ
キが使用されるが最外層の部分には場合によっては厚膜
を使用しても良い。Sputtering, deposition, and plating are used to form the thin film, but a thick film may be used for the outermost layer depending on the case.
第1図は本発明を示す概念図の一例でセラミックス基板
lにAg系導体15を内蔵し上面にSiチップ7、Au
電極6を搭載している。下面が本発明の具体例で内蔵及
びスルーホール中16のAg系導体15とI10端子と
してのコバーピ5の間をTi−No−Cu薄膜3さらに
Ag−Cuろう 4により接続した例を示している。FIG. 1 is an example of a conceptual diagram showing the present invention, in which an Ag-based conductor 15 is built into a ceramic substrate l, and a Si chip 7 and an Au conductor are mounted on the top surface.
Equipped with electrode 6. The bottom surface shows a specific example of the present invention in which 16 Ag-based conductors 15 in the built-in and through-holes and the cover pin 5 as the I10 terminal are connected by a Ti-No-Cu thin film 3 and an Ag-Cu solder 4. .
実施例1
Cab−At O−5iO2−B203系ガラス粉末と
アルミナ粉末からなるセラミックスグリーンシートにA
g導体ペーストを使用して配線パターンを印刷した後複
数枚を積層し熱圧着した。層間の導体の接続はグリーン
シートにパンチにより形成したスルーホール中に充填し
た導体ペーストにより行った。900℃で焼成した後第
2〜5図の順に薄膜を形成した。第2図に小才ようにセ
ラミ−7クス 1の内蔵導体としてAg導体2からなる
焼成基板上にメタルマスク8を固定しスパッタ装置の中
にセットする。Example 1 A ceramic green sheet made of Cab-At O-5iO2-B203 glass powder and alumina powder
After printing a wiring pattern using g conductor paste, multiple sheets were laminated and bonded by thermocompression. Conductor connections between layers were made using conductor paste filled in through holes punched in the green sheet. After firing at 900°C, thin films were formed in the order shown in Figures 2-5. As shown in FIG. 2, a metal mask 8 is fixed on a fired substrate made of an Ag conductor 2 as a built-in conductor of a ceramic 7x 1 and set in a sputtering apparatus.
次に2 X 1o−6torrまで排気した後Arガス
を導入し、連続しテTi 9. Mo to、 Cu
IIの順にそれぞれ0.1 体m 、1.0w国、2.
0用国の薄膜をIIF苗させた(第3図)。この場合7
1層9はセラミックス 1との付着を得るために、N。Next, after evacuation to 2 x 10-6 torr, Ar gas was introduced, and then Ti was continuously heated.9. Moto, Cu
In order of II, 0.1 body m, 1.0 w country, 2.
IIF seedlings were grown from the thin film of the same country (Figure 3). In this case 7
The first layer 9 is N to obtain adhesion with the ceramic 1.
層10はCu−Agろうへの71層9の拡!牧を防ぐた
めに、Cu層11はAg−Cuろう層13との濡れ性を
11)るためである。この後マスクをはずしく第4図)
、セラミックス基板上の15mmφの金属パッド上にA
g−Cuろうを使用して窒素/水素雰囲気中で850℃
、10分間処理して0.35mmφのビン12を接続し
た(第5図)。ビンの付着強度は5kg以上でビン切れ
した。又150℃@ R,r4−40℃のヒートサイ
クルを100サイクルした後も強度は変化しなかった。Layer 10 is an extension of 71 layer 9 to Cu-Ag wax! This is to improve the wettability of the Cu layer 11 with the Ag--Cu brazing layer 13 in order to prevent fogging. After this, remove the mask (Figure 4)
, A is placed on a 15mmφ metal pad on a ceramic substrate.
850°C in nitrogen/hydrogen atmosphere using g-Cu wax
After processing for 10 minutes, a 0.35 mmφ bottle 12 was connected (FIG. 5). The bottle broke when the adhesive strength of the bottle was 5 kg or more. Further, the strength did not change even after 100 heat cycles at 150°C@R, r4-40°C.
又4.270イのビンを使用した場合も同様の結果を得
た。但しろう材の量が多すぎた場合は強度が低下して好
ましくなかった。又、第5図に示したスルーホール部分
16のAg導体2と薄膜の接続も良好で上記ヒートサイ
クル後も問題は生じなかった。Ti層9の部分をOrに
した場合や、No層10の部分をW 、Nb又はTaに
した場合も同様の結果を得た。又Cu層11の部分はN
i。Similar results were obtained when a 4.270-inch bottle was used. However, if the amount of brazing filler metal was too large, the strength would decrease, which was not preferable. Further, the connection between the Ag conductor 2 and the thin film in the through-hole portion 16 shown in FIG. 5 was good, and no problems occurred even after the heat cycle. Similar results were obtained when the Ti layer 9 was made of Or, and when the No layer 10 was made of W, Nb, or Ta. Also, the part of the Cu layer 11 is N
i.
Ag又はPdにしても同様の結果を得た。Similar results were obtained using Ag or Pd.
実施例2
CaO−MgO−At203−5iO,、−8203系
ガラス粉末とアルミナ粉末からなるセラミックスグリー
ンシートにAg−Pd導体ペース)13を使用して実施
例1と同様な方法で得た積層体を950’Oで焼成した
(第6図)。この後ピンを接続する側の表面に連続しテ
Ti9、Mo1O,Cu1lの順にそれぞれ0.1 g
m、1.0 gm、2.0 graの厚みの薄膜をスパ
ッタリング法で形成しその後フォトリソグラフィーを使
用してレジスト14のマスクを薄膜辷に形成した。その
後の工程は図示していないがCu膜をHCI −F e
CI 2水溶液により、Mo膜をKOH−に3[Fe
(CM)e]5水溶液によりエツチングして薄膜を除去
し、1.5 amφのバンドを得た。残ったパッド上に
0.35mmφのコバー製のピンを850℃窒素還元雰
囲気でAg−Cuろうを使用してろう付した。ピンの付
着強度は5kg以上で総じてピン切れした。150 ’
0捉R,Tう一40℃で100 ヒートサイクル後も同
様の結果を得た。又4.270イのピンを使用した場合
も同様の結果を得た。Ti層9の部分をCrにした場合
やNo層10の部分をW、 Nb又はTaにした場合も
回様な結果であった。又Gulfの1゛クヒをAg、
Pd又はNiにした場合も同様であった。Example 2 A laminate obtained in the same manner as in Example 1 using Ag-Pd conductor paste (13) on a ceramic green sheet made of CaO-MgO-At203-5iO, -8203-based glass powder and alumina powder. It was fired at 950'O (Figure 6). After this, 0.1 g each of Ti9, Mo1O, and Cu1l was applied to the surface of the side where the pin is connected in this order.
A thin film with a thickness of 1.0 gm, 2.0 gra was formed by sputtering, and then a mask of resist 14 was formed on the side of the thin film using photolithography. Although the subsequent steps are not shown, the Cu film is
The Mo film was converted to KOH-3[Fe
The thin film was removed by etching with (CM)e]5 aqueous solution to obtain a band of 1.5 amφ. A 0.35 mm diameter Kovar pin was brazed onto the remaining pad using an Ag-Cu solder in a nitrogen reducing atmosphere at 850°C. The adhesion strength of the pin was generally 5 kg or more, and the pin broke. 150'
Similar results were obtained after 100 heat cycles at 40° C. for R and T. Similar results were also obtained when using a 4.270-inch pin. Similar results were obtained when the Ti layer 9 was made of Cr and when the No layer 10 was made of W, Nb, or Ta. Also, the Gulf's 1st Kuhi is Ag,
The same thing happened when Pd or Ni was used.
実施例3
Si080%、 B、0312%残りが7 )ly f
3 +)金属、及びアルカリ土類金属の酸化物などの組
成からなるゼ均粒度2 gmのガラス粉末50%と1l
均粒1隻54mのアルミナ粉末30%と酸化クロム粉末
20χよりなるセラミック絶縁体用混合粉末を使用して
実施例2と同様な方υ:でAg −Pd導体を内蔵した
セラミンク多層配線基板を作成した。この際焼成は酸化
性雰囲気中で950’CIHr保持の条件で行った。更
に実施例 1と同様な方法でTi、Mo、Cuの各層か
らなる1、5111IIlφの1tν膜パツドを形成し
、Ag−Cuろうを使用して0.35mmφのピンをろ
う伺した。ピンの付1、強度は5kg以)二でピン切し
た。又150℃手R,T5−4o℃のヒートサイクルを
lOOサイクルした後も強度は変化しなかった。又4.
270イのピンを使用した場合も同様の結果を得た。但
しろう材の賃が多すぎた場合は強度が低下して好ましく
なかった。又、第2図に示したスルーホール部分のAg
−Pd導体と薄膜の接続も良好で1−記ヒートサイクル
後も問題は生じなかった。T1の部分をOrにした場合
や、Noの部分を凱Nb又はTaにした場合も同様の結
果を得た。又Cuの部分はNi、Ag又はPdにしても
同様の結果を得た。Example 3 Si080%, B,0312% remaining 7)ly f
3 +) 50% glass powder with an average particle size of 2 gm consisting of metals and oxides of alkaline earth metals and 1 liter
A ceramic insulator multilayer wiring board with a built-in Ag-Pd conductor was created in the same manner as in Example 2 using a mixed powder for ceramic insulators consisting of 30% alumina powder of 54 m uniform grain size and 20x chromium oxide powder. did. At this time, the firing was performed in an oxidizing atmosphere under the conditions of maintaining 950' CIHr. Further, in the same manner as in Example 1, a 1tν film pad of 1,5111 IIlφ consisting of each layer of Ti, Mo, and Cu was formed, and a pin of 0.35 mmφ was soldered using Ag-Cu solder. The pin was attached (1, the strength was 5 kg or more), and the pin was cut with (2). Further, the strength did not change even after 100 cycles of heat cycles of 150°C hand R and T5-4o°C. Also 4.
Similar results were obtained when using 270 i pins. However, if the amount of brazing filler metal was too large, the strength would decrease, which was not desirable. Also, the Ag of the through hole shown in Figure 2
- The connection between the Pd conductor and the thin film was good, and no problems occurred even after the heat cycle described in 1-. Similar results were obtained when the T1 part was set to Or, and when the No part was set to Nb or Ta. Similar results were obtained even when the Cu portion was replaced with Ni, Ag, or Pd.
ハ 発明の効果
従来、使用することのできなかったAg−Cu系のろう
材により低温焼成ノ1(板にI10ビンやリードをろう
付できるようになった。この為接着強度が強いろう付は
ピンやリードを安価に得ることがIIf fkになった
。又この用途に供する低温焼成基板の表面粗さは、I1
0ピンやリードをろう利けする薄膜形成に8縞である利
点を有している。C. Effects of the invention It is now possible to braze I10 bottles and leads to plates using Ag-Cu based brazing materials, which could not be used in the past. Obtaining pins and leads at low cost has become IIf fk.Also, the surface roughness of the low temperature fired substrate used for this purpose is I1
The 8-striped structure has the advantage of forming a thin film for soldering pins and leads.
第1図は本発明を含む概合図の一例を示す。
第2〜6図は本発明の製造法の一例の部分拡大図を示し
たものである。
第2図はメタルマスク内定
第3図は金属薄膜形成
第4図はメタルマスク除去
第5図はAg−C:uろうによりピン接着第6図は薄1
19F−のレジスト形成
lセラミンクスノ、(板2 Ag導体 3 Ti−No
−Cu薄1i!24 Ag−C:uろう 5 コバーピ
ン 13 Au電極7 Siチップ 8 メタルマ
スク9 Ti膜10 No IIQ II C
u膜 12ピン+3 Ag−Pd導体 14
レジスト膜15 Ag系導体16スルーホール17
Au−3iJ%晶特1;1出願人 鳴海製陶株式会社
第1図
第2図
第4図
第5図FIG. 1 shows an example of a schematic diagram incorporating the invention. 2 to 6 show partially enlarged views of an example of the manufacturing method of the present invention. Figure 2: Metal mask preliminary determination Figure 3: Metal thin film formation Figure 4: Metal mask removed Figure 5: Ag-C:U pin bonding Figure 6: Thin 1
19F- resist formation l Ceramin Kusno, (Plate 2 Ag conductor 3 Ti-No
-Cu thin 1i! 24 Ag-C: u wax 5 Cover pin 13 Au electrode 7 Si chip 8 Metal mask 9 Ti film 10 No IIQ II C
U film 12 pins + 3 Ag-Pd conductor 14
Resist film 15 Ag-based conductor 16 Through hole 17
Au-3iJ% crystal special 1;1 Applicant: Narumi Seito Co., Ltd. Figure 1 Figure 2 Figure 4 Figure 5
Claims (4)
導体による回路配線を有する基板上に薄膜法よって形成
された金属層の上にI/0端子用のピンもしくはリード
を、Cuを含むろう材により結合した構造をもつことを
特徴とするセラミックス回路基板(1) A pin or lead for an I/0 terminal is placed on a metal layer formed by a thin film method on a substrate that is fired at 800 to 1100°C and has circuit wiring made of a low-melting point metal conductor inside, using wax containing Cu. A ceramic circuit board characterized by having a structure bonded by materials.
族の金属及びこれ等の組合はせからなることを特徴とす
る特許請求の範囲第1項記載のセラミックス回路基板(2) Metal layer is 4A, 5A, 6A, 8, 1B of the periodic table
The ceramic circuit board according to claim 1, characterized in that the ceramic circuit board is made of a group metal and a combination thereof.
下であることを特徴とする特許請求の範囲第1項記載の
セラミックス回路基板(3) The ceramic circuit board according to claim 1, wherein the content of lead oxide in the ceramic material is 1% by weight or less.
囲気で処理することを特徴とする特許請求の範囲第1項
記載のセラミクス回路基板(4) The ceramic circuit board according to claim 1, wherein the brazing treatment is performed in a neutral or reducing atmosphere of 600° C. or higher.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62156197A JP2589492B2 (en) | 1987-06-23 | 1987-06-23 | Ceramic circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62156197A JP2589492B2 (en) | 1987-06-23 | 1987-06-23 | Ceramic circuit board |
Publications (3)
Publication Number | Publication Date |
---|---|
JPS641268A JPS641268A (en) | 1989-01-05 |
JPH011268A true JPH011268A (en) | 1989-01-05 |
JP2589492B2 JP2589492B2 (en) | 1997-03-12 |
Family
ID=15622488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62156197A Expired - Lifetime JP2589492B2 (en) | 1987-06-23 | 1987-06-23 | Ceramic circuit board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2589492B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2665557B2 (en) * | 1988-09-14 | 1997-10-22 | 日本特殊陶業株式会社 | Bonded structure of ceramic body and external terminals |
JPH0794633A (en) * | 1993-09-24 | 1995-04-07 | Ngk Spark Plug Co Ltd | Ceramic board bonding metal member |
JP4571853B2 (en) * | 2004-12-14 | 2010-10-27 | 日本特殊陶業株式会社 | Wiring board |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6083356A (en) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | Semiconductor device |
-
1987
- 1987-06-23 JP JP62156197A patent/JP2589492B2/en not_active Expired - Lifetime
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