JPH01124271A - Formation of gaas solar cell - Google Patents
Formation of gaas solar cellInfo
- Publication number
- JPH01124271A JPH01124271A JP62281094A JP28109487A JPH01124271A JP H01124271 A JPH01124271 A JP H01124271A JP 62281094 A JP62281094 A JP 62281094A JP 28109487 A JP28109487 A JP 28109487A JP H01124271 A JPH01124271 A JP H01124271A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- gaas
- epitaxial layer
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 7
- 239000007864 aqueous solution Substances 0.000 abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 238000007738 vacuum evaporation Methods 0.000 abstract description 2
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000700560 Molluscum contagiosum virus Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、高品質のＧａＡｓエピタキシャル層を用いた
太陽電池の作成方法に関し、宇宙での使用を可能とする
経世で、耐放射線特性に優れた太陽電池の作成方法に関
する。[Detailed Description of the Invention] (Industrial Field of Application) The present invention relates to a method for producing a solar cell using a high-quality GaAs epitaxial layer, which has excellent radiation resistance properties and can be used in space. This invention relates to a method for making solar cells.
（従来の技術）
従来のＧａＡｓ太陽電池は、ＧａＡｓ単結晶基板の上に
エピタキシャル層を形成したものをもちいていた。Ｇａ
ＡｓはＳｉに比べて吸収係数が大きいので、エピタキシ
ャル層の厚さは３μｍ程度で十分太陽電池の機能を確保
することｈ＜−できるため軽量化に適している。(Prior Art) A conventional GaAs solar cell uses one in which an epitaxial layer is formed on a GaAs single crystal substrate. Ga
Since As has a larger absorption coefficient than Si, the thickness of the epitaxial layer of about 3 μm is enough to ensure the function of the solar cell (h<−), making it suitable for weight reduction.
しかし、基板としてＧ ａ Ａ ｓ ！１１結晶を用い
るために高価となる。However, as a substrate, GaAs! Since it uses 11 crystals, it is expensive.
一方、Ｓｉ基板など安価な異種基板上にＧａＡｓエピタ
キシャル層を形成することが試みられている。このエピ
タキシャル成長技術は最近進歩が著しく歪超格子層を介
してエピタキシャル成長を行うときには、格子不整合に
よる転位などの欠陥は歪み超格子層でストツブさせるこ
とができ、活性層であるエピタキシャル層に欠陥が侵入
することを防止することができ、高品質のＧａＡｓエピ
タキシャル層を得ることができる。On the other hand, attempts have been made to form a GaAs epitaxial layer on an inexpensive foreign substrate such as a Si substrate. This epitaxial growth technology has recently made significant progress. When epitaxial growth is performed through a strained superlattice layer, defects such as dislocations due to lattice mismatch can be stopped in the strained superlattice layer, and defects can invade the epitaxial layer, which is the active layer. This makes it possible to obtain a high quality GaAs epitaxial layer.
しかし、３μｍという薄膜状のＧａＡｓエピタキシャル
層を取り出して太陽電池を形成することはできず、基板
とともに組み込むことになるので、基板とエピタキシャ
ル層との界面の高密度の欠陥層を包含することになり、
太陽電池の性能低下を避けることができない。However, it is not possible to take out a GaAs epitaxial layer as thin as 3 μm to form a solar cell; it must be incorporated together with the substrate, which results in a high-density defect layer at the interface between the substrate and the epitaxial layer. ,
Deterioration in the performance of solar cells cannot be avoided.
（発明が解決しようとする問題点）
本発明は、上記の問題点を解消し、安価な異種基板を用
いて得た高品質のＧａＡｓエピタキシャル層のみを太陽
電池に組み込むことにより、軽量で、高効率のＧａＡｓ
太陽電池の作成を可能とする方法を提供しようとするも
のである。(Problems to be Solved by the Invention) The present invention solves the above problems and incorporates only a high-quality GaAs epitaxial layer obtained using an inexpensive heterogeneous substrate into a solar cell, thereby making it lightweight and highly efficient. Efficiency of GaAs
The aim is to provide a method that allows the creation of solar cells.
（問題点を解決するための手段）
本発明は、異種基板上に歪超格子層を介してＧａＡｓエ
ピタキシャル層を形成し、該エピタキシャル層表面に電
極を形成し、その上に透明保護板を張り付けた後、背面
の異種基板及び歪超格子層をエツチングで除去し、次い
で電極を形成することを特徴とするＧａＡｓ太陽電池の
作成方法である。(Means for Solving the Problems) The present invention forms a GaAs epitaxial layer on a heterogeneous substrate via a strained superlattice layer, forms an electrode on the surface of the epitaxial layer, and affixes a transparent protection plate thereon. This is a method for producing a GaAs solar cell characterized in that the dissimilar substrate and strained superlattice layer on the back surface are removed by etching, and then electrodes are formed.
（作用）
第一図は、本発明に係るＧａＡｓ太陽電池の作成手順を
示したものである。第一工程では、Ｓｉ基板の上に歪超
格子層を介してＧａＡｓエピタキシャル層を形成する。(Function) FIG. 1 shows a procedure for producing a GaAs solar cell according to the present invention. In the first step, a GaAs epitaxial layer is formed on a Si substrate via a strained superlattice layer.
このエピタキシャル成長法はＭｒ３Ｅ法、ＯＭＶＰＥ法
、ＭＯＣＶＤ法等のいずれでもよい。３μｍ以上のエピ
タキシャル層を形成した後、第二工程ではその上に導電
性フィルムなどの透明電極を付着し、さらに、第三工程
でガラスやアクリルなどの透明保護板を窓材として張り
付ける。その後、第四工程でＫ ＯＨ水溶液などのエツ
チング液をもちいてＳｉ基板を除き、第五工程では硫酸
系のエツチング液で歪超格子層を除去する。なお、Ｋ
ＯＨ水溶液はＧａＡｓをほとんど溶かさないので、Ｓｉ
基板の選択的エツチングが容易である。次に、第六工程
でエツチング後の表面に第二工程と同様に電極を形成し
て太陽電池を完成する。なお、電極の形状は第一図のも
のに限られず、全面電極を用いてもよい。This epitaxial growth method may be any of the Mr3E method, OMVPE method, MOCVD method, etc. After forming an epitaxial layer of 3 μm or more, a transparent electrode such as a conductive film is attached thereon in a second step, and a transparent protective plate made of glass or acrylic is attached as a window material in a third step. Thereafter, in the fourth step, the Si substrate is removed using an etching solution such as a KOH aqueous solution, and in the fifth step, the strained superlattice layer is removed using a sulfuric acid-based etching solution. In addition, K
Since OH aqueous solution hardly dissolves GaAs, Si
Selective etching of the substrate is easy. Next, in the sixth step, electrodes are formed on the etched surface in the same manner as in the second step to complete the solar cell. Note that the shape of the electrode is not limited to that shown in FIG. 1, and a full-surface electrode may be used.
このように、歪み超格子層を用いて得た高品質のＧａＡ
ｓエピタキシャル層のみを太陽電池の窓材のうえに取り
出し電池を形成することができたので、軽量で、高効率
のＧａＡｓ太陽電池を安価で製造することが可能となっ
た。In this way, high-quality GaA obtained using a strained superlattice layer
Since it was possible to form a cell by taking out only the s epitaxial layer on the window material of the solar cell, it became possible to manufacture a lightweight, highly efficient GaAs solar cell at low cost.
（実施例）
厚さ約０．７ｍｍのＳｉ基板の上にＭＢＥ法とＭＯＣＶ
Ｄ法で厚さ０．０２μｍの歪超格子層と厚さ３μｍのＧ
ａＡｓエピタキシャル層を形成した。まず、Ｓｉ基板を
８５０℃以上の高温で約１５分間熱処理してから、基板
温度を２５０℃にして、成長速度１０００人／ ｈ ｒ
で１５分間ＧａＡｓのエピタキシャル成長を行い、２５
０人の第一バッファ層を得、次いで、基板温度を５８０
°Ｃに上げて成長速度１μｍ／ｈｒで３０分間ＧａＡｓ
−ｃビタキシャル成長ヲ行い、０．５μｍの第二バッフ
ァ層を得、その後、基板温度を再び２５０℃にしてＩ
ｎ ｏ、ｌａ ａ Ｏ，ＱΔｓ （１０人） ／ Ｇ
ａ Ａｓ（１０人）を成長速度０．１μｍ／ｈｒで１
０周期エピタキシャル成長を行った。そして、３．０μ
ｍのエピタキシャル層を形成し、太陽電池構造とした。(Example) MBE method and MOCV on a Si substrate with a thickness of about 0.7 mm
Using the D method, a strained superlattice layer with a thickness of 0.02 μm and a G layer with a thickness of 3 μm are formed.
An aAs epitaxial layer was formed. First, the Si substrate is heat treated at a high temperature of 850°C or higher for about 15 minutes, then the substrate temperature is increased to 250°C, and the growth rate is 1000 people/hr.
Epitaxial growth of GaAs was performed for 15 minutes at 25
Obtain the first buffer layer of 0 and then increase the substrate temperature to 580
GaAs was grown at a growth rate of 1 μm/hr for 30 min at a temperature of 1 μm/hr.
-c bitaxial growth was performed to obtain a 0.5 μm second buffer layer, and then the substrate temperature was again raised to 250°C and I
no, la a O, QΔs (10 people) / G
a As (10 people) at a growth rate of 0.1 μm/hr 1
Zero-cycle epitaxial growth was performed. And 3.0μ
m epitaxial layers were formed to form a solar cell structure.
電極は第一図に示した形状で、材質としてはＡｕＧｅＮ
ｉを用いて真空蒸行により形成した。そして、その」
；に厚さ約１ｍｍのガラス板をエポキシ樹脂を用いて張
り付けた。エツチングは、重量濃度５０％のＫ Ｏ＋（
水溶液を用いて９０℃で１〜２時間処理してＳｉ基板を
除去し、次いで、重量比ＩＩ、Ｓｏ、： ＩＩ、Ｏ：
Ｈ，Ｏ，＝ １ ： Ｉ ： １００とする硫酸と過酸
化水素含有水溶液を用いて０．５分間処理して歪超格子
層を除去した。The electrode has the shape shown in Figure 1 and is made of AuGeN.
It was formed by vacuum evaporation using i. And that'
A glass plate with a thickness of about 1 mm was attached to the plate using epoxy resin. Etching was performed using K O+ (with a weight concentration of 50%).
The Si substrate was removed by treatment with an aqueous solution at 90° C. for 1 to 2 hours, and then the weight ratio II, So: II, O:
The strained superlattice layer was removed by treatment for 0.5 minutes using an aqueous solution containing sulfuric acid and hydrogen peroxide with H,O,=1:I:100.
その結果、ガラス板の上に２．５μｍのＧａＡｓエピタ
キシャル層が残った。次に、エツチング表面に上記と同
様に電極を形成してＧａＡｓ太陽電池を完成した。As a result, a 2.5 μm GaAs epitaxial layer remained on the glass plate. Next, electrodes were formed on the etched surface in the same manner as above to complete a GaAs solar cell.
この太陽電池の効率は８．５％であった。The efficiency of this solar cell was 8.5%.
（発明の効果）
本発明は、上記の構成を採用することによ超格子層を介
してＧａΔＳエピタキシャル層を形成することにより、
高品質のエピタキシヤル層を得、太陽電池の窓材上に該
エピタキシ會ル層のみを取り出して太陽電池を作成する
ことができたので、高効率のＧａＡｓ太陽電池を安価に
製造することができるようになった。(Effects of the Invention) The present invention employs the above configuration to form a GaΔS epitaxial layer via a superlattice layer, thereby achieving
Since we were able to obtain a high-quality epitaxial layer and create a solar cell by extracting only the epitaxial layer onto the window material of a solar cell, it is possible to manufacture highly efficient GaAs solar cells at low cost. It became so.
この太陽電池は軽量で、耐放射線性に優れているところ
から、宇宙の使用に適したものである。This solar cell is lightweight and has excellent radiation resistance, making it suitable for use in space.
第一図は、本発明のＧａＡｓ太陽電池の作成方法の手順
を説明するための図である。
代理人（弁理士）平ｈイＳ１」ナ
レ １
り ４FIG. 1 is a diagram for explaining the procedure of the method for producing a GaAs solar cell of the present invention. Agent (patent attorney) Hirai S1” story 1 ri 4
Claims (1)
電極を形成し、その上に透明保護板を張り付けた後、背
面の異種基板及び歪超格子層をエッチングで除去し、次
いで電極を形成することを特徴とするＧａＡｓ太陽電池
の作成方法。[Claims] A GaAs epitaxial layer is formed on a different substrate via a strained superlattice layer, an electrode is formed on the surface of the epitaxial layer, and a transparent protective plate is pasted thereon. A method for producing a GaAs solar cell, comprising removing a strained superlattice layer by etching, and then forming an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62281094A JPH01124271A (en) | 1987-11-09 | 1987-11-09 | Formation of gaas solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62281094A JPH01124271A (en) | 1987-11-09 | 1987-11-09 | Formation of gaas solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01124271A true JPH01124271A (en) | 1989-05-17 |
Family
ID=17634254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62281094A Pending JPH01124271A (en) | 1987-11-09 | 1987-11-09 | Formation of gaas solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01124271A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000189883A (en) * | 1994-08-08 | 2000-07-11 | Tokyo Electron Ltd | Method and apparatus for forming coating film |
| EP1246261A2 (en) * | 2001-03-27 | 2002-10-02 | Nagoya Institute of Technoloy | Space solar cell |
| WO2014081048A1 (en) * | 2012-11-26 | 2014-05-30 | Ricoh Company, Ltd. | Photovoltaic cell and photovoltaic cell manufacturing method |
-
1987
- 1987-11-09 JP JP62281094A patent/JPH01124271A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000189883A (en) * | 1994-08-08 | 2000-07-11 | Tokyo Electron Ltd | Method and apparatus for forming coating film |
| EP1246261A2 (en) * | 2001-03-27 | 2002-10-02 | Nagoya Institute of Technoloy | Space solar cell |
| EP1246261A3 (en) * | 2001-03-27 | 2004-04-21 | Nagoya Institute of Technoloy | Space solar cell |
| WO2014081048A1 (en) * | 2012-11-26 | 2014-05-30 | Ricoh Company, Ltd. | Photovoltaic cell and photovoltaic cell manufacturing method |
| JP2014123712A (en) * | 2012-11-26 | 2014-07-03 | Ricoh Co Ltd | Method of manufacturing solar cell |
| CN104937727A (en) * | 2012-11-26 | 2015-09-23 | 株式会社理光 | Photovoltaic cell and photovoltaic cell manufacturing method |
| US9450138B2 (en) | 2012-11-26 | 2016-09-20 | Ricoh Company, Ltd. | Photovoltaic cell and photovoltaic cell manufacturing method |
| US10008627B2 (en) | 2012-11-26 | 2018-06-26 | Ricoh Company, Ltd. | Photovoltaic cell and photovoltaic cell manufacturing method |
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