JPH01123232A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPH01123232A JPH01123232A JP28256987A JP28256987A JPH01123232A JP H01123232 A JPH01123232 A JP H01123232A JP 28256987 A JP28256987 A JP 28256987A JP 28256987 A JP28256987 A JP 28256987A JP H01123232 A JPH01123232 A JP H01123232A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist pattern
- resist
- polymer material
- material film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000002861 polymer material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000000977 initiatory effect Effects 0.000 claims abstract description 9
- 239000000178 monomer Substances 0.000 claims abstract description 7
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 3
- 229910000077 silane Inorganic materials 0.000 claims abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract 2
- 229920000620 organic polymer Polymers 0.000 claims description 14
- 238000006116 polymerization reaction Methods 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract description 2
- 238000009832 plasma treatment Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 30
- 239000007789 gas Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 aromatic silane compound Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010559 graft polymerization reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
この発明はパターン形成方法に関するものであり、特に
、予め被加工基板上に形成されたレジストパターン表面
にのみ選択的に有機高分子材料膜を形成する、パターン
形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] This invention relates to a pattern forming method, and in particular to a method for selectively forming an organic polymer material film only on the surface of a resist pattern previously formed on a substrate to be processed. The present invention relates to a pattern forming method.
［従来の技術］
従来、ＩＣやＬＳＩなどの半導体デバイスの製造は、以
下の工程によって行なわれている。すなわち、被加工基
板面上にレジストと呼ばれる高分子化合物等からなる有
機組成物の溶液を塗布して、薄膜を形成する。次に、そ
の上に、半導体デバイスのパターンが描かれたマスクパ
ターンを、光、電子ビーム、Ｘ線などの高エネルギ線に
より転写し、レジストの化学変化により、上記被加工基
板上に潜像を形成する。その後、現像によりパターン状
のレジスト膜を形成し、これをマスクに用いて波加工基
板面の加工を行なっている。[Prior Art] Conventionally, semiconductor devices such as ICs and LSIs have been manufactured through the following steps. That is, a thin film is formed by applying a solution of an organic composition called resist, which is made of a polymer compound, etc., onto the surface of a substrate to be processed. Next, a mask pattern with a semiconductor device pattern drawn thereon is transferred using high-energy rays such as light, electron beams, or X-rays, and a latent image is created on the substrate by chemical change of the resist. Form. Thereafter, a patterned resist film is formed by development, and this is used as a mask to process the surface of the corrugated substrate.
［発明が解決しようとする問題点コ
ところで、近年、ＬＳＩのパターン寸法の微細化に伴い
、パターン形成に使用されるレジスト材料には、エネル
ギ線に対する高い感度および解像度が要求されており、
さらに基板加工時のドライエツチングに対する高い耐性
も要求されている。[Problems to be Solved by the Invention] In recent years, with the miniaturization of LSI pattern dimensions, resist materials used for pattern formation are required to have high sensitivity and resolution to energy beams.
Furthermore, high resistance to dry etching during substrate processing is also required.
しかしながら、レジスト材料の感度、解像度およびドラ
イエツチング耐性はそれぞれ互いに相反する傾向にあり
、すべての性能を満足する材料は現在のところできてい
ない。たとえば、最近の高解像度ポジ型フォトレジスト
たとえばＭＣＰＲ２０００Ｈ（三菱化成工業（株）製）
では、高解像露光装置を用いても、解像度が「残しパタ
ーン」で０．６μｍ１コンタクトホールのような「抜き
パターン」では０．７μｍが限界である。独立の「残し
パターン」では露光量を多くすれば解像度は上がるが、
レジストの膜厚が減少するという膜減りが生じ、ドライ
エツチング時にレジストもすべてエツチングされてしま
う。また、現在量産工場で使用されている汎用レジスト
では、「残しパターン」がマスクの寸法より細る傾向が
あり、これを防ぐために、予めマスク寸法を太くしてお
く必要があった。However, the sensitivity, resolution, and dry etching resistance of resist materials tend to be contradictory to each other, and a material that satisfies all of these properties has not yet been produced. For example, recent high-resolution positive photoresists such as MCPR2000H (manufactured by Mitsubishi Chemical Industries, Ltd.)
Now, even if a high-resolution exposure device is used, the resolution of a "remaining pattern" is 0.6 .mu.m for a "blank pattern" such as one contact hole, and the limit is 0.7 .mu.m. With independent "remaining patterns", increasing the exposure will increase the resolution, but
A film thinning occurs in which the film thickness of the resist decreases, and the resist is completely etched away during dry etching. Furthermore, in the general-purpose resists currently used in mass-production factories, the "remaining pattern" tends to be thinner than the mask dimensions, and to prevent this, it is necessary to increase the mask dimensions in advance.
この発明は上記のような問題点を解決するためになされ
たもので、パターン形成されたレジストに耐ドライエツ
チング性を持たせることができるとともに、レジストパ
ターンの細る傾向をなくし、さらに、微細な「抜きパタ
ーン」を形成することのできる、パターン形成方法を提
供することを目的とする。This invention was made in order to solve the above-mentioned problems, and it is possible to impart dry etching resistance to the patterned resist, eliminate the tendency of the resist pattern to thin, and furthermore, it is possible to provide fine " It is an object of the present invention to provide a pattern forming method that can form a punched pattern.
［問題点を解決するための手段］ 本発明に係るパターン形成方法は以下の工程を含む。[Means for solving problems] The pattern forming method according to the present invention includes the following steps.
（ａ） 被加工基板上にレジストパターンを形成する
工程。(a) Step of forming a resist pattern on a substrate to be processed.
（ｂ） 上記レジストパターンに気体を用いる低温プ
ラズマ前処理を施し、該レジストパターンの表面に重合
開始種を生成させる工程。(b) A step of subjecting the resist pattern to low-temperature plasma pretreatment using gas to generate polymerization initiation species on the surface of the resist pattern.
（Ｃ） 重合開始種が生成されたレジストパターン表
面に有機単量体ガスを接触させ、該レジストパターン表
面に該有機単量体ガスをグラフト重合させ、該レジスト
パターン表面に有機高分子材料膜を形成する工程。(C) Bringing an organic monomer gas into contact with the surface of the resist pattern on which polymerization initiation species have been generated, graft polymerizing the organic monomer gas onto the surface of the resist pattern, and forming an organic polymer material film on the surface of the resist pattern. The process of forming.
［作用］
レジストパターン表面に有機高分子材料膜を形成するの
で、該レジストがドライエツチング耐性の小さいレジス
トであっても、ドライエツチング耐性が向上する。また
、レジストパターン表面に有機高分子材料膜が形成され
るので、その膜厚の分だけレジストが太る。また、レジ
ストパターン表面に有機高分子材料膜を形成するので、
微細な「抜きパターン」が形成される。[Operation] Since an organic polymer material film is formed on the surface of the resist pattern, even if the resist has low dry etching resistance, the dry etching resistance is improved. Furthermore, since an organic polymer material film is formed on the surface of the resist pattern, the resist becomes thicker by the thickness of the organic polymer material film. In addition, since an organic polymer material film is formed on the resist pattern surface,
A fine "punching pattern" is formed.
［実施例］ 以下、この発明の一実施例を図について説明する。[Example] An embodiment of the present invention will be described below with reference to the drawings.
第１Ａ図〜第１Ｄ図はこの発明の一実施例の工程を断面
図で示したものである。FIGS. 1A to 1D are cross-sectional views showing the steps of an embodiment of the present invention.
まず、フォトリソグラフィによって、レジストパターン
１を被加工基板２」二に形成する（第１Ａ図）。第１Ａ
図において、３は「残しパターン」であり、４は「抜き
パターン」である。First, a resist pattern 1 is formed on a substrate 2'' to be processed by photolithography (FIG. 1A). 1st A
In the figure, 3 is a "remaining pattern" and 4 is a "cutting pattern".
次いで、この基板２をプラズマ反応装置中に導入し、Ｈ
２および／または０２ガスにより低温プラズマ前処理を
行ない、レジスト１表面に重合開始種５を生成する（第
１Ｂ図）。Next, this substrate 2 is introduced into a plasma reactor, and H
A low temperature plasma pretreatment is performed using 2 and/or 02 gas to generate polymerization initiation species 5 on the surface of the resist 1 (FIG. 1B).
その後、同反応装置中に、芳香族シラン化合物たとえば
下記の構造式を有するフェニルシランのガス６を導入し
、プラズマ重合させる（第１Ｃ図）芳香族シラン化合物
において、Ｓｉと、該Ｓｔと結合している有機分子との
間の結合は弱く、プラズマ中で容易に解離して、Ｓｉを
１Ｌ！−格とする重合体を与える重合反応が進行する。Thereafter, an aromatic silane compound, such as phenylsilane gas 6 having the following structural formula, is introduced into the reactor and subjected to plasma polymerization (Fig. 1C). The bond between organic molecules is weak and easily dissociates in plasma, reducing Si to 1L! - The polymerization reaction to give the polymer of interest proceeds.
重合は、第１Ｂ図で示したレジスト表面の重合開始種５
から選択的に起こる（グラフト重合）。この重合反応に
より、レジストパターン１上に、芳香環とＳｉを何する
何機高分子材料膜７が形成される（第１Ｄ図）。この有
機高分子材料膜７は、ドライエッチング耐性に優れた膜
である。第１Ｄ図から明らかなように、「残しパターン
」３では有機高分子材料膜７の分だけ寸法が太り、「抜
きパターン」４では、有機高分子材料膜７の膜厚の分だ
け微細化されたパターンが得られる。Polymerization is carried out by polymerization initiation species 5 on the resist surface shown in Figure 1B.
(graft polymerization). As a result of this polymerization reaction, a polymer material film 7 consisting of an aromatic ring and Si is formed on the resist pattern 1 (FIG. 1D). This organic polymer material film 7 is a film with excellent dry etching resistance. As is clear from FIG. 1D, in the "remaining pattern" 3, the dimensions are increased by the amount of the organic polymer material film 7, and in the "cutout pattern" 4, the dimensions are reduced by the thickness of the organic polymer material film 7. A pattern can be obtained.
なお、上記プラズマ重合の工程（第１Ｃ図）において、
印加電圧、ガス圧、ガス流量を調節することにより、有
機高分子材料膜７の膜厚を調整することができる。In addition, in the plasma polymerization step (Fig. 1C),
The thickness of the organic polymer material film 7 can be adjusted by adjusting the applied voltage, gas pressure, and gas flow rate.
また、上記実施例ではドライエツチング耐性のある膜を
形成する場合について説明したが、この発明の応用はこ
のものに限定されるものでなく、導入するガスの種類を
変えることによって、導電性の膜、光電変換膜、光記憶
膜など種々の機能を有する機能膜の微細パターンを形成
することができる。この場合、導電性の膜および光電変
換膜を作る場合には、チオフェン、ピロール等のガスが
好ましく用いられ、光記憶膜ではポルフィリン。Furthermore, although the above embodiment describes the case where a film with dry etching resistance is formed, the application of the present invention is not limited to this, and by changing the type of gas introduced, a conductive film can be formed. It is possible to form fine patterns of functional films having various functions such as photoelectric conversion films and optical storage films. In this case, gases such as thiophene and pyrrole are preferably used when making conductive films and photoelectric conversion films, and porphyrins are used for optical storage films.
アゾ化合物が好ましく用いられる。Azo compounds are preferably used.
［発明の効果］
以上説明したとおり、この発明によれば、被加工基板上
に形成されたレジストパターン表面に有機高分子材料膜
を形成するので、ドライエツチング耐性の小さいレジス
トでも、ドライエツチング耐性が生じてくる。また、有
機高分子膜が形成された分だけレジストの寸法が太るの
で、従来方法において見られた、パターンの細りがなく
なる。[Effects of the Invention] As explained above, according to the present invention, an organic polymer material film is formed on the surface of a resist pattern formed on a substrate to be processed, so even a resist with low dry etching resistance can have high dry etching resistance. It arises. Furthermore, since the size of the resist increases by the amount of organic polymer film formed, the thinning of the pattern seen in the conventional method is eliminated.
また、「抜きパターン」では、より一層、パターンが微
細化される。なお、本発明に用いる導入ガスの種類を変
えることによって、上記効果が得られるばかりでなく、
導電性膜、光電変換膜、光記憶膜等種々の機能を有する
機能膜の微細パターンを形成することも可能となる。Furthermore, in the case of a "punched pattern", the pattern is made even finer. Note that by changing the type of introduced gas used in the present invention, not only the above effects can be obtained, but also
It is also possible to form fine patterns of functional films having various functions such as conductive films, photoelectric conversion films, and optical storage films.
第１Ａ図、第１Ｂ図、第１Ｃ図および第１Ｄ図はこの発
明の一実施例の工程を断面図で示したものである。
図において、１はレジスト、２は被加工基板、３は「残
しパターン」、４は「抜きパターン」、５は重合開始種
、６は有機単量体ガス、７は有機高分子材料膜である。
なお、各図中同一符号は同一または相当部分を示す。FIGS. 1A, 1B, 1C and 1D are sectional views showing the steps of an embodiment of the present invention. In the figure, 1 is a resist, 2 is a substrate to be processed, 3 is a "remaining pattern", 4 is a "cutout pattern", 5 is a polymerization initiation species, 6 is an organic monomer gas, and 7 is an organic polymer material film. . Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (3)
と、 前記レジストパターンに、気体を用いる低温プラズマ前
処理を施し、該レジストパターンの表面に重合開始種を
生成させる工程と、 前記重合開始種が生成されたレジストパターン表面に有
機単量体ガスを接触させ、該レジストパターン表面に該
有機単量体ガスをグラフト重合させ、該レジストパター
ン表面に有機高分子材料膜を形成する工程と、 を含むパターン形成方法。(1) a step of forming a resist pattern on a substrate to be processed; a step of subjecting the resist pattern to low-temperature plasma pretreatment using gas to generate a polymerization initiation species on the surface of the resist pattern; and a step of generating a polymerization initiation species on the surface of the resist pattern. bringing an organic monomer gas into contact with the surface of the resist pattern on which has been generated, graft polymerizing the organic monomer gas onto the surface of the resist pattern, and forming an organic polymer material film on the surface of the resist pattern; A pattern forming method including.
たはＯ＿２ガスである特許請求の範囲第１項記載のパタ
ーン形成方法。(2) The pattern forming method according to claim 1, wherein the gas used in the low-temperature plasma pretreatment is H_2 or O_2 gas.
範囲第１項または第２項記載のパターン形成方法(3) The pattern forming method according to claim 1 or 2, wherein the organic monomer is an aromatic silane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28256987A JPH01123232A (en) | 1987-11-09 | 1987-11-09 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28256987A JPH01123232A (en) | 1987-11-09 | 1987-11-09 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01123232A true JPH01123232A (en) | 1989-05-16 |
Family
ID=17654193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28256987A Pending JPH01123232A (en) | 1987-11-09 | 1987-11-09 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01123232A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1117008A2 (en) * | 1999-12-02 | 2001-07-18 | Axcelis Technologies, Inc. | UV-assisted chemical modification of photoresist images |
| DE10244767A1 (en) * | 2002-09-26 | 2004-04-08 | Europäisches Laboratorium für Molekularbiologie | Method and device for determining the distance between a reference plane and an inner or outer optical interface of an object, and use thereof for determining a surface profile of an, in particular metallic, object, autofocus module, microscope and method for autofocusing a microscope |
| EP1598858A1 (en) * | 2003-02-28 | 2005-11-23 | Fujitsu Limited | Etching resistant film, process for producing the same, surface cured resist pattern, process for producing the same, semiconductor device and process for producing the same |
| JP2007148992A (en) * | 2005-11-30 | 2007-06-14 | Casio Comput Co Ltd | Electronic device |
| KR100763828B1 (en) * | 2005-05-19 | 2007-10-05 | 도쿄 오카 고교 가부시키가이샤 | Composition for Forming Intermediate Layer Containing Silylphenylene-Based Polymer and Pattern-Forming Method |
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| JPS5957432A (en) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | Forming method for pattern |
| JPS59148335A (en) * | 1983-02-14 | 1984-08-25 | Nippon Telegr & Teleph Corp <Ntt> | Forming method of minute pattern |
| JPS60129745A (en) * | 1983-12-16 | 1985-07-11 | Shuzo Hattori | Resist of three-layer structure and method for achieving high resolution plate making by using it |
| JPS6147641A (en) * | 1984-08-15 | 1986-03-08 | Toshiba Corp | Formation of resist pattern |
| JPS6148921A (en) * | 1984-08-15 | 1986-03-10 | Toshiba Corp | Forming method for resist pattern |
| JPS61138254A (en) * | 1984-12-10 | 1986-06-25 | Matsushita Electric Ind Co Ltd | Formation of pattern resin composition |
| JPS61296716A (en) * | 1985-06-26 | 1986-12-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6285251A (en) * | 1985-10-09 | 1987-04-18 | Nec Corp | Formation of protective coating on film photomask |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1117008A2 (en) * | 1999-12-02 | 2001-07-18 | Axcelis Technologies, Inc. | UV-assisted chemical modification of photoresist images |
| EP1117008A3 (en) * | 1999-12-02 | 2006-03-29 | Axcelis Technologies, Inc. | UV-assisted chemical modification of photoresist images |
| DE10244767A1 (en) * | 2002-09-26 | 2004-04-08 | Europäisches Laboratorium für Molekularbiologie | Method and device for determining the distance between a reference plane and an inner or outer optical interface of an object, and use thereof for determining a surface profile of an, in particular metallic, object, autofocus module, microscope and method for autofocusing a microscope |
| EP1598858A1 (en) * | 2003-02-28 | 2005-11-23 | Fujitsu Limited | Etching resistant film, process for producing the same, surface cured resist pattern, process for producing the same, semiconductor device and process for producing the same |
| US7456103B2 (en) | 2003-02-28 | 2008-11-25 | Fujitsu Limited | Etch-resistant film, forming method thereof, surface-modified resist pattern, forming method thereof, semiconductor device and manufacturing method thereof |
| EP1598858B1 (en) * | 2003-02-28 | 2014-04-09 | Fujitsu Limited | Process for producing etching resistant film, surface cured resist pattern, process for producing surface modified resist pattern, and process for producing semiconductor device |
| KR100763828B1 (en) * | 2005-05-19 | 2007-10-05 | 도쿄 오카 고교 가부시키가이샤 | Composition for Forming Intermediate Layer Containing Silylphenylene-Based Polymer and Pattern-Forming Method |
| JP2007148992A (en) * | 2005-11-30 | 2007-06-14 | Casio Comput Co Ltd | Electronic device |
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