JPH01123171A - Temperature drift tester of semiconductor apparatus - Google Patents

Abstract

PURPOSE:To perform a drift test in low cost with high accuracy, by using the transient heat resistance characteristic of the package of a device to be measured to apply high power within the tolerant limit thereof for a short time and measuring drift quantity. CONSTITUTION:A tester is constituted of a power device 1 having reference voltage 3, a set variable current source 8, a voltmeter 9 equipped with a measuring strobe and a power supply 10. Now, when transient heat resistance at a long time t2 is set to K2, the rise DELTAT2 in the temp. of a pellet at this time becomes DELTAT2=Pd/K2 (Pd; rated power). When a test is performed in such a state that a test time is set to t1, the transient heat resistance at the power applying time t1 is K1 and, therefore, power PdM to be applied necessary for obtaining the rise in the temp. DELTAT2 under said condition becomes PdM=DELTAT2/K1. As a result, when power supply voltage VCCA and a current I2 variable externally are set so as to satisfy DELTAT2/K1=VCCAXICCA+VCCAXI2, the rise in the temp. of the pellet of the device to be measured approaches that of the device to be measured when prescribed power is applied for the time t2 and a highly accurate drift test can be performed within a short time.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a temperature drift test device for semiconductor devices.
In particular, the present invention relates to a test device for fully testing the drift characteristics of power type semiconductors.

[Conventional technology]

FIG. 4 is a diagram showing a drift characteristic testing apparatus that has been conventionally used. In the figure, 1 is a power device having a reference voltage, 2 is a power transistor in the power device 1, and 3 is a power device 1. Reference voltage within,
4 is an output terminal, 5 is a power supply terminal, 6 is a reference voltage output terminal,
7 is a ground terminal, 10 is a power source, 11 is a current source, and 12 is a voltmeter.

In the conventional test, as shown in Figure 5, the rated power is set at time O;
Pd = Vcc++ X Iccm +VcB X
I, (where v cci+ is the power supply voltage and V CEI is Q
Apply the C-2 voltage of p, 11 is the value of Io,
The initial reference voltage (Vrefo) is measured with the voltmeter 9, and the time tz (tz 2 several tens of seconds) after a sufficient period of time has passed.
Then, the reference voltage (Vrefz) is measured again with the voltmeter 9, and the amount of drift (ΔVref'') is determined from this.

ΔVref' = Vref, -Vref.

[Problem that the invention seeks to solve]

In the conventional testing apparatus, as shown in FIG. 5, the reference voltage was measured at the start of the test and at time t2, a sufficient period of time after that, and the drift f was determined from the difference. This method has the problem of not being able to be used for all inspections of products, both from a cost standpoint and from a delivery standpoint.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a temperature drift testing device for semiconductor devices that can perform drift testing with high accuracy and low cost in a short testing time.

[Means for solving problems]

The temperature drift test device for semiconductor devices according to the present invention includes:
Using the transient thermal resistance characteristics of the package of the device under test,
The amount of drift is measured by applying high power for a short time within the allowable limit.

[Effect]

In the semiconductor device temperature drift testing device of the present invention, applying high power for a short time brings the temperature rise of the pellet of the device under test closer to that when applying a specified power for a long time as in the past, and moreover, it is possible to test 100% of the devices. Therefore, the accuracy of measuring the amount of drift can be improved.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing a temperature drift test apparatus for semiconductor devices according to an embodiment of the present invention, FIG. 2 is a transient thermal resistance characteristic diagram of a device under test, and FIG. 3 is a timing chart for the measurement of FIG. 1. be. In the figure, 1 is a power device having a reference voltage, 2 is a power transistor in the power device 1, 3 is a reference voltage in the power device 1, 4 is an output terminal, 5 is a power supply terminal, 6 is a reference voltage output terminal, 7 8 is a ground terminal, 8 is a variable setting current source, 9 is a voltmeter with a measuring strobe, and 10 is a power source.

In the conventional temperature drift test of semiconductor devices, the rated power (Pd, = Vccm X I ccm + Vc
ti X I +) was applied, and changes in parameters after 11 were measured. Here, 11 usually takes a value of around 1 minute.

However, since the temperature drift test measures the variation in parameters due to temperature changes in the pellet of the device under test, the transient thermal resistance characteristics of the device under test shown in Figure 2 are used to determine the temperature during the long-term drift test. It is sufficient to set the conditions for short-term power application so that the pellet temperature rise is close to that of .

Now, assuming that the transient thermal resistance over a long period of time (t) is 2, the temperature rise ΔT2 of the pellet at this time is ΔT2 = Pd
/Kt On the other hand, the test time is 1. (Here, the practical value of t is about 1 second from Ool.) When testing, from Figure 2, the transient thermal resistance when the power is applied for time t is The applied power PdML required to obtain a temperature rise of ΔT2, PdM = ΔTt/+ Therefore, the externally variable power supply voltage VCCA + current ■2, ΔTz/+ = Vcca X Icca +Vct
If the setting is made to satisfy a X Iz, the temperature rise of the pellet of the device under test at this time will approach the temperature rise of the pellet of the device under test when the specified power is applied for a long time (tx), In other words, it becomes possible to perform a drift test with low cost and high accuracy.

〔Effect of the invention〕

As described above, according to the temperature drift testing apparatus for semiconductor devices according to the present invention, by using the transient thermal resistance characteristics of the puff cage of the device under test, high power is applied for a short time within the permissible limit to measure the amount of drift. This method reduces test time, enables high-precision drift testing at low cost, and greatly contributes to improving the quality (performance) level of products.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a temperature drift test apparatus for semiconductor devices according to an embodiment of the present invention, FIG. 2 is a transient thermal resistance characteristic diagram of a device under test, and FIG. 3 is a timing chart diagram of the measurement of FIG. 1. FIG. 4 is a diagram showing a conventional temperature drift test apparatus for semiconductor devices, and FIG. 5 is a diagram showing the timing of measurement in FIG. 4. In the figure, 1 is a power device, 2 is a power transistor, 3 is a reference voltage, 4 is an output terminal, 5 is a power supply terminal, 6
1 is a reference voltage output terminal, 7 is a ground terminal, 8 is a variable setting current source, 9 is a voltmeter with a measuring strobe, and 10 is a power source. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a test device that performs a temperature drift test on a semiconductor device under test, the power to be applied to the semiconductor device under test for the temperature drift test is determined based on the transient thermal resistance characteristics of the semiconductor device under test. A temperature drift testing apparatus for a semiconductor device, characterized in that the amount of drift is measured by applying the electric power to the semiconductor device to be measured.