JPH01118796A - First wall of nuclear fusion device - Google Patents

First wall of nuclear fusion device

Info

Publication number
JPH01118796A
JPH01118796A JP62275717A JP27571787A JPH01118796A JP H01118796 A JPH01118796 A JP H01118796A JP 62275717 A JP62275717 A JP 62275717A JP 27571787 A JP27571787 A JP 27571787A JP H01118796 A JPH01118796 A JP H01118796A
Authority
JP
Japan
Prior art keywords
tape
wall
copper
plasma
lithium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62275717A
Other languages
Japanese (ja)
Other versions
JPH07119815B2 (en
Inventor
Kimihiro Ioki
公裕 伊尾木
Takuro Iwamura
岩村 卓郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Atomic Power Industries Inc
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Atomic Power Industries Inc, Mitsubishi Metal Corp filed Critical Mitsubishi Atomic Power Industries Inc
Priority to JP62275717A priority Critical patent/JPH07119815B2/en
Publication of JPH01118796A publication Critical patent/JPH01118796A/en
Publication of JPH07119815B2 publication Critical patent/JPH07119815B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00Energy generation of nuclear origin
    • Y02E30/10Nuclear fusion reactors

Abstract

PURPOSE:To prevent metal atoms from being mixed with plasma by forming a tape of alloy which containing the same metal materials and low atomic number components of the base material of a 1st wall by quenching, etc., and fixing the tape to a surface of the 1st wall plasma side. CONSTITUTION:The 1st wall 10 is made of copper alloy material formed in a pipe shape, and the outer peripheral surface of the 1st wall 10 is wound with the tape 11 of copper lithium alloy formed by quenching. Further, it is fixed by vacuum soldering. The tape 11 formed by quenching is small in gravitational deviation due to the specific gravity value between copper-lithium alloy. Therefore, when this tape 11 is heated above about 300 deg.C in a process wherein the tape is fixed on the outer peripheral surface of a 1st wall 10 or in a process of exposure of plasma in use, the atom component ratio of the copper and lithium varies continuously from the surface of the tape 11 to the center. Therefore, the tape 11 has superior heat structure soundness and even in sputter damage is caused, the decrement is supplied from inside the tape to maintain long life.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は核融合装置の第1壁に関するものである。尚、
第1壁とはプラズマに面して設置される核融合装置にお
ける構成要素を指し、例えばリミタ、ダイバータ、ブラ
ンケットのプラズマに面する部分などをいうものとする
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a first wall of a nuclear fusion device. still,
The first wall refers to a component in a nuclear fusion device that is installed facing the plasma, such as a limiter, a diverter, a portion of a blanket that faces the plasma, etc.

[従来の技術] 第1壁の構造としては、従来から、その目的や条件に応
じて種々の型式、形状が考案されている。
[Prior Art] Various types and shapes of the structure of the first wall have been devised in the past, depending on the purpose and conditions.

また、第1壁(特に熱負荷の高いダイバータなと)の材
料には、高熱負荷時の熱応力に耐えるものとして、熱伝
導率の大きい金属材料、例えば銅やその合金などが用い
られている。 − 図面の第8図は従来の第1壁の一例であり、この第1壁
1は、銅合金材料から作られたパイプ状のもので、内部
が冷却材を流通させるための冷却チャネルとなっ°てい
る。このような構成では、銅合金材料がプラズマに直接
さらされることになるので、中性子照射を受けるばかり
でなく、高熱・粒子負荷を受け、プラズマに悪影響を及
ぼす銅原子、その他の金属原子が数多くプラズマ中に混
入してしまう、そこで、従来一般には、第9図に示され
るように、第1壁1のプラズマ側表面2に低原子番号材
のコーティング層3を形成することとしている。
In addition, the first wall (particularly the divertor, which has a high heat load) is made of metal materials with high thermal conductivity, such as copper and its alloys, in order to withstand thermal stress during high heat loads. . - Figure 8 of the drawings is an example of a conventional first wall, and this first wall 1 is a pipe-shaped one made of a copper alloy material, and the inside serves as a cooling channel for circulating a coolant. °is. In such a configuration, the copper alloy material is directly exposed to the plasma, so it is not only exposed to neutron irradiation, but also subjected to high heat and particle loads, and a large number of copper atoms and other metal atoms, which have a negative effect on the plasma, are exposed to the plasma. Therefore, conventionally, as shown in FIG. 9, a coating layer 3 of a low atomic number material is formed on the plasma side surface 2 of the first wall 1.

[発明が解決しようとする問題点] しかしながら、低原子番号材のコーティング層3は、鋼
合金材料の第1壁1に対して追随性が悪く、熱膨張率の
差も大きいので、機械荷重時、或は、高熱負荷時に、剥
離やクラックを生じる恐れがある、という問題点があっ
た。
[Problems to be Solved by the Invention] However, the coating layer 3 made of a low atomic number material has poor conformability to the first wall 1 made of a steel alloy material and has a large difference in coefficient of thermal expansion, so Alternatively, there is a problem that peeling or cracking may occur during high heat loads.

従って、本発明の目的は、かかる問題点を除去し、高熱
負荷に耐え得る熱構造特性を有すると同時に、プラズマ
不純物特性に悪影響を及ぼさない第1壁を提供すること
にある。
Therefore, an object of the present invention is to eliminate such problems and provide a first wall that has thermal structural characteristics that can withstand high thermal loads and does not adversely affect plasma impurity characteristics.

[問題点を解決するための手段] 本発明は、核融合装置のプラズマに面して設置される第
1壁において、第1壁の母材と同じ金属材料および低原
子番号材を成分とする合金のテープを急冷法によって作
り、このテープを第1壁の少なくともプラズマ側の表面
に固着したことを特徴としている。
[Means for Solving the Problems] The present invention provides a method in which the first wall installed facing the plasma of a nuclear fusion device contains the same metal material and low atomic number material as the base material of the first wall. It is characterized in that an alloy tape is made by a quenching method, and this tape is fixed to at least the surface of the first wall on the plasma side.

[作用] 上述したような構成の本発明による第1壁にあっては、
固着されたテープが急冷法により製造されているので、
リチウムなどの低原子番号材の含有率の大きい合金を得
ることができ、従って、プラズマの曝射に際し、低原子
番号材がllllt次テープ表面に偏析し、結果的にこ
の低原子番号材により第1壁のプラズマ側表面が従来に
増して長期間覆われることとなる。また、このテープは
、その性質上、第1壁に対して密着性に優れ、第1壁を
確実に保護することができる。
[Function] In the first wall according to the present invention configured as described above,
Since the fixed tape is manufactured using a quenching method,
It is possible to obtain an alloy with a high content of low atomic number materials such as lithium. Therefore, upon plasma exposure, the low atomic number materials segregate on the surface of the tape, and as a result, this low atomic number material causes The plasma side surface of one wall is covered for a longer period of time than in the past. Further, due to its properties, this tape has excellent adhesion to the first wall, and can reliably protect the first wall.

[実施例] 以下、図面と共に本発明に従った核融合装置の第1壁の
好適な実施例について詳細に説明する。
[Embodiments] Hereinafter, preferred embodiments of the first wall of the fusion device according to the present invention will be described in detail with reference to the drawings.

第1図および第2図には本発明が適用された第1壁が示
されている0図示の第1壁10は、先に説明した従来構
成と同様に、パイプ状に構成された銅合金材料製のもの
である。第1壁10の外周面には、急冷法により作られ
た銅−リチウム合金のテープ11が巻き付けられ(第1
図)、更に、真空ろう付け、拡散接合などの既存の固着
技術によって固着されている(第2図)。
1 and 2 show a first wall 10 to which the present invention is applied. The first wall 10 shown in the drawings is made of a pipe-shaped copper alloy, similar to the conventional structure described above. It is made of material. A copper-lithium alloy tape 11 made by a rapid cooling method is wound around the outer peripheral surface of the first wall 10 (first
(Fig. 2), and are further fixed using existing adhesion techniques such as vacuum brazing and diffusion bonding (Fig. 2).

銅−リチウム合金のテープ11は、急冷法、より詳細に
は急冷ロール法により作られている。以下にその製造方
法を第3図のテープ製造装置に沿って説明する。
The copper-lithium alloy tape 11 is made by a quenching method, more specifically a quench roll method. The manufacturing method will be explained below along with the tape manufacturing apparatus shown in FIG.

テープ製造装置の溶解るっぽ15の中には、銅の融点(
1085℃)以上、好適には1100℃以上の銅とリチ
ウムの高温溶湯が作られている。溶解るつぼ15内では
、高温溶湯を均質にするため、撹拌効果が与えられてい
る。溶解るつぼ15の雰囲気ガス(アルゴンガス)に圧
力を加えることにより、高温溶湯は桶16を通って溶湯
噴射ノズル17に送られる。
Melting point of copper (
A high-temperature molten metal of copper and lithium is produced at a temperature of 1085°C or higher, preferably 1100°C or higher. Inside the melting crucible 15, a stirring effect is provided to make the high temperature molten metal homogeneous. By applying pressure to the atmospheric gas (argon gas) in the melting crucible 15, the high-temperature molten metal is sent to the molten metal injection nozzle 17 through the tub 16.

この圧力を変えることにより出湯量を制御することがで
きる。溶湯噴射ノズル17からは高温溶湯が、回転する
冷却ロール18へと吹き付けられ、冷却ロール18の外
周面上で102℃/sec以上の冷却速度で急冷されて
銅−リチウム合金のテープ11が形成される。上記過程
を連続的に行うことにより長尺のテープ11が形成され
、巻取用ロール19に巻き取られていく、これら一連の
製造過程は全てアルゴンガス雰囲気中で行われる。この
製造方法の場合、リチウムの割合を2.6〜20^to
mic%としたリチウム含有率の大きな合金を得ること
ができる。尚、図面の第4図は上記製造過程における銅
とリチウムの相状態変化を参考のために示したものであ
る。
By changing this pressure, the amount of hot water dispensed can be controlled. The high-temperature molten metal is sprayed from the molten metal injection nozzle 17 onto the rotating cooling roll 18, and is rapidly cooled on the outer peripheral surface of the cooling roll 18 at a cooling rate of 102° C./sec or more to form the copper-lithium alloy tape 11. Ru. A long tape 11 is formed by performing the above steps continuously, and is wound onto a take-up roll 19. All of these manufacturing steps are performed in an argon gas atmosphere. In the case of this manufacturing method, the proportion of lithium is 2.6 to 20^to
An alloy with a high lithium content in terms of mic% can be obtained. Incidentally, FIG. 4 of the drawings shows, for reference, the change in the phase states of copper and lithium during the above manufacturing process.

このようにして製造されたテープ11は、銅とリチウム
の比重差による重力偏析が少なく、しかも高濃度の銅−
リチウム合金テープである。従って、このテープ11が
第1壁の外周面に固着する過程において、或は、使用中
プラズマの曝射過程において、概略300℃以上の温度
に加熱されると、第5図に示されるように、銅とリチウ
ムの原子成分比はテープ11の表面から中心部にかけて
連続的に変化する。従って、このテープ11は熱構造健
全性に優れ、また、スパッタ損耗などにより表面からリ
チウムが失われても、減少した分はテープ内部から供給
されるので、テープ表面に偏析しているリチウムの厚さ
が薄くても、従来のものに比べ長寿命であるという効果
を有している。
The tape 11 manufactured in this way has less gravitational segregation due to the difference in specific gravity between copper and lithium, and has a high concentration of copper.
It is a lithium alloy tape. Therefore, when this tape 11 is heated to a temperature of about 300° C. or higher during the process of fixing it to the outer peripheral surface of the first wall or during the plasma exposure process during use, as shown in FIG. The atomic ratio of copper and lithium changes continuously from the surface to the center of the tape 11. Therefore, this tape 11 has excellent thermal structural integrity, and even if lithium is lost from the surface due to sputter wear, etc., the lost amount is supplied from inside the tape, so the thickness of lithium segregated on the tape surface increases. Even though it is thin, it has the advantage of having a longer lifespan than conventional ones.

このようなテープ11が固着された第1壁10は、テー
プ表面に偏析したリチウムにより結果的に外周がリチウ
ムの薄膜で覆われたことになり、プラズマに悪影響を及
ぼす金属原子の放出が防止される。また、このテープ1
1は、その母材として第1壁10の母材と同じ銅が用い
られているので、第1壁10に対して騨染み易く密着性
が高い、また、テ−ブ11と第1壁10とは熱膨張率が
接近しており、テープ11自体も薄く可視性があるので
、高熱負荷時や荷重負荷時にテープ11は第1壁10に
対して良好に追随することができる。
The periphery of the first wall 10 to which such a tape 11 is fixed is covered with a thin lithium film due to the lithium segregated on the tape surface, which prevents the release of metal atoms that adversely affect the plasma. Ru. Also, this tape 1
1 is made of the same copper as the base material of the first wall 10, so it easily stains the first wall 10 and has high adhesion. Since the coefficient of thermal expansion is close to that of the tape 11 and the tape 11 itself is thin and visible, the tape 11 can follow the first wall 10 well during high heat loads or load loads.

上記実施例では本発明をバイブ状の第1壁に適用した場
合であるが、第1壁の形状はパイプ状に限られないこと
は言うまでもない6例えば、第1壁が調合金製の平板状
のものであれば、第6図に示されるように、急冷法によ
り製造された銅−リチウム合金のテープ11を第1壁2
0のプラズマ側表面に並べ、拡散接合などの固着方法で
第7図の如く固着しても良い。
In the above embodiment, the present invention is applied to a vibrator-shaped first wall, but it goes without saying that the shape of the first wall is not limited to a pipe shape. If it is, as shown in FIG.
They may be arranged on the plasma side surface of the substrate 0 and fixed as shown in FIG. 7 by a fixing method such as diffusion bonding.

上記2つの実施例では、銅を母材とする第1壁に銅−リ
チウム合金のテープを固着する構造を示したが、第1壁
の母材に応じてテープの成分は適宜変更可能であり、ア
ルミニウムーリチウム、タングステン−銅−リチウム、
タングステン−アルミニウムーリチウムなどの組み合わ
せが考えられる。これらの組み合わせの場合も、リチウ
ムが表面偏析を起こすことは既に知られている。
In the above two examples, a structure is shown in which a copper-lithium alloy tape is fixed to the first wall having a copper base material, but the components of the tape can be changed as appropriate depending on the base material of the first wall. , aluminum-lithium, tungsten-copper-lithium,
Possible combinations include tungsten-aluminum-lithium. It is already known that lithium also causes surface segregation in the case of these combinations.

[発明の効果] 以上のように、本発明によれば、リチウムなどの低原子
番号材を高濃度とした合金テープを第1壁に固着してい
るため、プラズマの曝射によりリチウムなどの低原子番
号材が第1壁表面からスパッタ損耗しても、減少した分
はテープ内部から順次供給されるので、金属原子がプラ
ズマに混入されるのを防止することができる。また、テ
ープは、第1壁と同じ金属材料を母材としているので、
第1壁に対して密着性および追随性が良く、高熱負荷時
や機械荷重時に剥離やクラック等が生じる恐れがない、
このように、本発明は多数の効果を奏することができる
[Effects of the Invention] As described above, according to the present invention, since the alloy tape containing a high concentration of a low atomic number material such as lithium is fixed to the first wall, the low atomic number material such as lithium is Even if the atomic number material is lost by sputtering from the surface of the first wall, the reduced amount is sequentially supplied from inside the tape, making it possible to prevent metal atoms from being mixed into the plasma. Also, since the base material of the tape is the same metal material as the first wall,
It has good adhesion and conformability to the first wall, and there is no risk of peeling or cracking during high heat loads or mechanical loads.
In this way, the present invention can have many advantages.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本発明が適用された第1壁の一実
施例を示す斜視図であり、第1図は合金のテープの固着
前、第2図はテープの固着後を示す図、第3図は本発明
に用いられるテープを製造するための装置の概略説明図
、第4図は銅とリチウムの相状態図、第5図は合金中に
おける厚さ方向の銅とリチウムの成分比を示すグラフ、
第6図および第7図は本発明の第2の実施例を示す斜視
図であり、第6図はテープの固着前、第7図はテープの
固着後を示す図、第8図および第9図はそれぞれ従来の
第1壁を示す斜視図である0図中、1.10.20:第
1壁   2;プラズマ側表面3:コーティングl  
11:テープ 15;溶解るつぼ   16:桶 17:溶湯噴射ノズル 18:冷却ロール19:巻取用
ロール 特許出願人  三菱原子カニ業株式会社同 上   三
菱金属株式会社 j・リソ′・・□ 第1図 第2図 mO込 %  Lし 第6図       第7図
1 and 2 are perspective views showing an embodiment of the first wall to which the present invention is applied, FIG. 1 showing the state before the alloy tape is fixed, and FIG. 2 the state after the tape is fixed. , Figure 3 is a schematic explanatory diagram of the apparatus for manufacturing the tape used in the present invention, Figure 4 is a phase diagram of copper and lithium, and Figure 5 is the composition of copper and lithium in the thickness direction in the alloy. A graph showing the ratio,
6 and 7 are perspective views showing a second embodiment of the present invention, FIG. 6 is a view before the tape is fixed, FIG. 7 is a view after the tape is fixed, and FIGS. 8 and 9 are perspective views showing the second embodiment of the present invention. Each of the figures is a perspective view showing a conventional first wall. In figure 0, 1.10.20: first wall 2; plasma side surface 3: coating l
11: Tape 15; Melting crucible 16: Pail 17: Molten metal injection nozzle 18: Cooling roll 19: Winding roll Patent applicant Mitsubishi Atomic Crab Industry Co., Ltd. Same as above Mitsubishi Metals Co., Ltd. Fig. 2 mO included % L Fig. 6 Fig. 7

Claims (1)

【特許請求の範囲】[Claims] 核融合装置のプラズマに面して設置される第1壁におい
て、該第1壁の母材と同じ金属材料および低原子番号材
を成分とする合金のテープを急冷法によって作り、該テ
ープを前記第1壁の少なくともプラズマ側の表面に固着
したことを特徴とした核融合装置の第1壁。
In the first wall installed facing the plasma of the fusion device, a tape made of an alloy whose components are the same metal material and low atomic number material as the base material of the first wall is made by a rapid cooling method, and the tape is A first wall of a nuclear fusion device, characterized in that the first wall is fixed to at least a plasma side surface of the first wall.
JP62275717A 1987-11-02 1987-11-02 First wall of fusion device Expired - Lifetime JPH07119815B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62275717A JPH07119815B2 (en) 1987-11-02 1987-11-02 First wall of fusion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62275717A JPH07119815B2 (en) 1987-11-02 1987-11-02 First wall of fusion device

Publications (2)

Publication Number Publication Date
JPH01118796A true JPH01118796A (en) 1989-05-11
JPH07119815B2 JPH07119815B2 (en) 1995-12-20

Family

ID=17559393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62275717A Expired - Lifetime JPH07119815B2 (en) 1987-11-02 1987-11-02 First wall of fusion device

Country Status (1)

Country Link
JP (1) JPH07119815B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130383A (en) * 1985-12-03 1987-06-12 株式会社東芝 Heat receiving plate for nuclear fusion device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130383A (en) * 1985-12-03 1987-06-12 株式会社東芝 Heat receiving plate for nuclear fusion device

Also Published As

Publication number Publication date
JPH07119815B2 (en) 1995-12-20

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