JPH01114110A - Piezoelectric thin film surface acoustic wave device - Google Patents
Piezoelectric thin film surface acoustic wave deviceInfo
- Publication number
- JPH01114110A JPH01114110A JP27136887A JP27136887A JPH01114110A JP H01114110 A JPH01114110 A JP H01114110A JP 27136887 A JP27136887 A JP 27136887A JP 27136887 A JP27136887 A JP 27136887A JP H01114110 A JPH01114110 A JP H01114110A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- piezoelectric thin
- acoustic wave
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 51
- 239000011787 zinc oxide Substances 0.000 abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 12
- 239000000126 substance Substances 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003670 easy-to-clean Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 101100346156 Caenorhabditis elegans moe-3 gene Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
圧ｆｆｉ薄膜とくし形電極とを組合わせて構成され、く
し形電極に高周波電界を印加して表面波を励振、或いは
くし形電極上を伝搬する表面波を電気信号に変換して受
信する圧Ｎ Ｉ ＩＩ！弾性表面波装置に関し、
周波数微調整を容易に、かつ、高精度に行ない得、しか
も、容易に洗浄できて化学的安定性の高い表面波装置を
得ることを目的とし、
圧電体１ＪＩＩＩの表面上に、膜厚を調整して装置の弾
性表面波周波数を調整するための金属薄膜を形成した構
成とする。[Detailed Description of the Invention] [Summary] It is constructed by combining a pressure FFI thin film and comb-shaped electrodes, and applies a high-frequency electric field to the comb-shaped electrodes to excite surface waves or generate surface waves propagating on the comb-shaped electrodes. The pressure N I II is converted into an electrical signal and received! Regarding surface acoustic wave devices, the purpose is to obtain a surface acoustic wave device that allows fine frequency adjustment easily and with high precision, is easy to clean, and has high chemical stability. In addition, a metal thin film is formed to adjust the surface acoustic wave frequency of the device by adjusting the film thickness.
本発明は、圧電薄膜とくし形電極とを組合わせて構成さ
れ、くし形電極に高周波電界を印加して表面波を励振、
或いはくし形電極上を伝搬する表面波を電気信号に変換
して受信する圧電薄膜弾性表面波装置に関する。The present invention is constructed by combining a piezoelectric thin film and comb-shaped electrodes, and applies a high-frequency electric field to the comb-shaped electrodes to excite surface waves.
Alternatively, the present invention relates to a piezoelectric thin film surface acoustic wave device that converts surface waves propagating on comb-shaped electrodes into electrical signals and receives the electrical signals.
このような圧電薄膜弾性表面波装置では、所定の周波数
を得るためにくし形電極の膜厚を削り取る等して周波数
調整を行なうが、このような周波数調整を容易に、かつ
高精度に行なう必要がある。In such piezoelectric thin film surface acoustic wave devices, the frequency is adjusted by shaving off the film thickness of the comb-shaped electrode in order to obtain a predetermined frequency, but it is necessary to perform such frequency adjustment easily and with high precision. There is.
又、くし形電極作製後に装置を洗浄する必要があるが、
この場合も容易に洗浄でき、かつ、化学的変化を生じな
いことが必要である。Also, it is necessary to clean the device after making the comb-shaped electrodes.
In this case as well, it is necessary that it can be easily cleaned and that no chemical changes occur.
弾性表面波を励振或いは受信する基本的な構成は第３図
に示す如くである。同図（Ａ）、（Ｂ）に示すようなア
ルミニウム（Ａｌ＞膜のくし形電極１を同図（Ａ）に示
す圧電体単結晶２の表面に、或いは、同図（Ｂ）に示す
圧電体薄膜３の上下いずれかの面に作製しく同図（Ｂ）
中、４は非圧電体基板）クシ形電極１にへ周波電界を印
加して表面波を励振、或いはくし形ｆｆ１ｉｌ上を伝搬
する表面波を電気信号に変換して受信する。The basic configuration for exciting or receiving surface acoustic waves is shown in FIG. A comb-shaped electrode 1 made of aluminum (Al> film) as shown in (A) and (B) of the same figure is attached to the surface of the piezoelectric single crystal 2 shown in (A) of the same figure, or (B)
4 is a non-piezoelectric substrate) A frequency electric field is applied to the comb-shaped electrode 1 to excite surface waves, or the surface waves propagating on the comb-shaped electrode 1 are converted into electrical signals and received.
ここで、弾性表面波の動作基本周波数をｆｏ＋表面波の
速度をＶとすれば、電極幅りと空隙ａとを等しく構成し
た場合の電極幅りは、ｈ−Ｖ／４ｆｏである。一般に、
表面波の実用周波数範囲は数１０ＭＨｚ〜数ＧＨｚであ
るので、例えばｖ＝４０００ｍ／Ｓとすれば、電極幅り
は１００ｕｒａ （ｆｏ−１０ＭＨｚ ） 〜０．２
μ１（ｆｏ＝５ＧＨｚ ）の範囲に構成される。Here, if the operating fundamental frequency of the surface acoustic wave is fo+the velocity of the surface wave is V, then the electrode width when the electrode width and the gap a are configured to be equal is h-V/4fo. in general,
Since the practical frequency range of surface waves is several tens of MHz to several GHz, for example, if v = 4000 m/S, the electrode width is 100 ura (fo-10 MHz) to 0.2
It is configured in the range of μ1 (fo=5GHz).
ところで、所定の周波数を得るにｉ、電極幅り或いは圧
電体ＷＩ膜の膜厚を所定の随に設定することが必要であ
るが、最終的な周波数機’ａｍは、製作段階においてく
し形電極１の膜厚を削り取ることによってなｉれる。こ
の場合、膜厚を少なく調整すればその分だけ膜による応
力が小さくなるので、この部分の弾性表面波の周波数を
高くすることができる。By the way, in order to obtain a predetermined frequency, it is necessary to set the electrode width or the film thickness of the piezoelectric WI film to a predetermined value. This can be achieved by removing the film thickness of 1. In this case, if the film thickness is adjusted to a smaller value, the stress due to the film will be reduced by that much, so the frequency of the surface acoustic waves in this portion can be increased.
従来、このような周波数微調整の方法としては、化学液
を用いたウェットエツチング法にてくし形電極を削り取
ったり或いはプラズマを用いたドライマツチング法にて
結晶面を削り取る方法がある。Conventionally, such frequency fine adjustment methods include scraping off the comb-shaped electrode by wet etching using a chemical solution, or scraping off the crystal plane by dry matching using plasma.
一方、くし形電極作製後に装置を清浄にする目的で装置
を洗浄する必要がある。このとき、圧電体薄膜の材料と
しては、製造技術及びスパッタ材料の供給という点で安
定しており、且つ電気機械結合係数の大きな酸化亜鉛（
ＺｎＯ）膜が通常用いられる。On the other hand, it is necessary to clean the device after manufacturing the comb-shaped electrodes. At this time, the material for the piezoelectric thin film is zinc oxide (zinc oxide), which is stable in terms of manufacturing technology and sputtering material supply and has a large electromechanical coupling coefficient.
ZnO) films are commonly used.
前述の従来例では、周波数微調整に際して化学液を用い
たウェットエツチング法を行なっているのでくし形電極
の膜厚制御が困難であり、一方のプラズマを用いたドラ
イエツチング法では製造装置が大形化し、コスト高とな
り、工程が多くなる問題点があった。In the conventional example mentioned above, since a wet etching method using a chemical liquid is used to fine-tune the frequency, it is difficult to control the film thickness of the comb-shaped electrode.On the other hand, the dry etching method using plasma requires large manufacturing equipment. There were problems in that the process became more complex, higher costs, and more steps were required.
又、装置の洗浄に関しては次のような問題点があった。Additionally, there were the following problems with cleaning the equipment.
即ち、圧電体薄膜として前記の理由から酸化亜鉛（Ｚｎ
Ｏ）が用いられるが、ＺｎＯ膜は一般に化学的安定性に
欠け、特に、酸に対して溶解性である。このため、第４
図に示すように、非圧電体基板４上にＺｎＯ膜の圧電体
薄膜３を形成され、その表面にくし形電極１を形成され
たものでは、ＺｎＯ膜の圧電体薄膜３が外に露出するの
で、このような構成のものでは圧電体薄膜が溶解してし
まう問題点があった。That is, for the reasons mentioned above, zinc oxide (Zn) is used as the piezoelectric thin film.
Although ZnO films generally lack chemical stability and are particularly soluble in acids. For this reason, the fourth
As shown in the figure, when a piezoelectric thin film 3 of ZnO film is formed on a non-piezoelectric substrate 4 and a comb-shaped electrode 1 is formed on the surface thereof, the piezoelectric thin film 3 of ZnO film is exposed to the outside. Therefore, with such a configuration, there was a problem that the piezoelectric thin film would dissolve.
本発明は、周波数微調整を容易に、かつ、高精度に行な
い得、しかも、容易に洗浄できて化学的安定性の高い圧
電薄膜弾性表面波装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a piezoelectric thin film surface acoustic wave device that allows fine frequency adjustment easily and with high precision, is easy to clean, and has high chemical stability.
上記問題点は、圧電体薄膜の表面上に、膜厚を調整して
装置の弾性表面波周波数を調整するための金ｍ１ｓＩｌ
を形成してなることを特徴とする圧電薄膜弾性表面波装
置によって解決される。The above problem is that gold m1sIl is added on the surface of the piezoelectric thin film to adjust the film thickness and adjust the surface acoustic wave frequency of the device.
The problem is solved by a piezoelectric thin film surface acoustic wave device characterized by forming a piezoelectric thin film surface acoustic wave device.
本発明では、圧電体ＮＷＡの上に金属薄膜を形成する際
、圧電体ｉｓに対する応力が大になり、この部分の弾性
表面波の周波数が低くなる。金属薄膜の膜厚を調整制御
することにより、周波数を微調整し得る。In the present invention, when a metal thin film is formed on the piezoelectric material NWA, stress on the piezoelectric material is increases, and the frequency of the surface acoustic wave in this portion becomes low. By adjusting and controlling the thickness of the metal thin film, the frequency can be finely adjusted.
〔実施例〕
第１図は本発明装置の一実施例の構成図を示し、同図（
Ａ）は斜視図、同図（Ｂ）は断面図である。[Embodiment] Figure 1 shows a configuration diagram of an embodiment of the device of the present invention.
A) is a perspective view, and (B) is a sectional view.
なお、同図（Ａ＞は、図を明瞭にするためにくし形電極
６ａ、６ｂ、酸化シリコン膜７．Ｍ化亜鉛膜８．アルミ
ニウム膜９の各厚み部分を省略して描いである。Note that, in FIG. 2A, the comb-shaped electrodes 6a, 6b, the silicon oxide film 7, the zinc oxide film 8, and the aluminum film 9 are omitted for clarity.
第１図中、５はシリコン基板（非圧電体基板）で、その
表面に例えばアルミニウム（金でもよい）等のくし形電
極６ａ、６ｂが形成されている。７は酸化シリコン（Ｓ
ｆＯｚ）膜（誘電体薄膜）で、シリコン基板５の略仝表
面を覆うように形成されている。８は酸化亜鉛（ＺｎＯ
）膜（圧電体薄膜）で、酸化シリコン膜７の表面上で、
特にくし形電極６ａ、６ｂが交互に連続する部分の上方
に膜厚Ｈで形成されている。９は例えばアルミニウム（
Ａ２）膜（或いは金（Ａｕ）膜でもよい）で、装置の表
面に膜厚ｔでスパッタ蒸着によって形成されている。In FIG. 1, reference numeral 5 denotes a silicon substrate (non-piezoelectric substrate), on the surface of which comb-shaped electrodes 6a, 6b made of, for example, aluminum (or gold may be used) are formed. 7 is silicon oxide (S
fOz) film (dielectric thin film), which is formed to cover substantially the surface of the silicon substrate 5. 8 is zinc oxide (ZnO
) film (piezoelectric thin film) on the surface of the silicon oxide film 7,
In particular, the comb-shaped electrodes 6a and 6b are formed with a film thickness H above the alternately continuous portions. 9 is, for example, aluminum (
A2) A film (or a gold (Au) film may be used), which is formed on the surface of the device by sputter deposition to a thickness t.
上述のような構成になる表面波装置を作製するに際し、
次のような工程で行なう。When creating a surface wave device with the above configuration,
The process is as follows.
先ず、シリコン基板５の表面にくし形電極６ａ。First, a comb-shaped electrode 6a is formed on the surface of a silicon substrate 5.
６ｂを形成し、くし形電極６ａ，５ｂの各電極間に、か
つ、これらの表面を覆うように酸化シリコン膜７を蒸着
する。酸化シリコン膜７は、アルミニウムＩ［１９とく
し形電極６ａ、６ｂとが導通しないように、かつ、シリ
コン基板７上に酸化亜鉛膜８を成長させるためのもので
ある。この場合、酸化シリコンｇＩ７の膜厚２を酸化亜
鉛膜８の膜厚Ｈの１／１０程度にすれば、弾性表面波の
伝搬に悪影響が及ぶことはない。6b is formed, and a silicon oxide film 7 is deposited between each of the comb-shaped electrodes 6a and 5b and so as to cover the surfaces thereof. The silicon oxide film 7 is for preventing conduction between the aluminum I[19 and the interdigitated electrodes 6a, 6b, and for growing the zinc oxide film 8 on the silicon substrate 7. In this case, if the film thickness 2 of the silicon oxide film gI7 is set to about 1/10 of the film thickness H of the zinc oxide film 8, the propagation of surface acoustic waves will not be adversely affected.
続いて、酸化シリコンｌＩ７の表面上で、特にくし形電
極６ａ、６ｂが交互に連続する部分の上方にスパッタ蒸
着によって膜厚Ｈで酸化亜鉛膜８を形成する。ここで、
結晶面（００１）のシリコン基板と結晶口（０００１）
の酸化亜鉛膜とを組合わせた構造の表面波装置を伝搬す
るＲａｙｌｅｉｇｈｗａｖｅｓの分散特性の理論解析結
果を第２図に示す。Subsequently, a zinc oxide film 8 with a thickness H is formed by sputter deposition on the surface of the silicon oxide lI7, particularly above the portions where the comb-shaped electrodes 6a and 6b are alternately continuous. here,
Silicon substrate with crystal plane (001) and crystal mouth (0001)
FIG. 2 shows the results of a theoretical analysis of the dispersion characteristics of Rayleigh waves propagating through a surface acoustic wave device having a structure in which a zinc oxide film is combined with a zinc oxide film.
なお、波長をλとするとに＝２π／λであるので、第２
図の膜厚ＫＨはノンディメンションである。同図より明
らかな如く、酸化亜鉛膜（圧電体薄膜）８のＩｇ！厚を
大にする程、弾性表面波の位相速度（周、波数）は低く
なる。Note that if the wavelength is λ, then = 2π/λ, so the second
The film thickness KH in the figure is non-dimensional. As is clear from the figure, the Ig! of the zinc oxide film (piezoelectric thin film) 8! The larger the thickness, the lower the phase velocity (period, wave number) of the surface acoustic wave.
このように、周波数は酸化亜鉛膜８の膜厚によって決定
されるが、酸化亜鉛膜８そのものの膜厚を制御すること
だけで周波数を高精度に制御することは困難である。そ
こで、本発明は、酸化亜鉛膜８をスパッタ蒸着すること
によって大体の周波数を決定した後、この表面にアルミ
ニウム膜９を例えばスパッタ蒸着（真空蒸着や電解メツ
キでもよい）によって形成し、この膜厚ｔを高精度に制
御して周波数を微調整する。この場合、圧電体薄膜であ
る酸化亜鉛膜８の上にアルミニウム膜９が形成されると
いうことは、酸化亜鉛膜８に対する応力が大になること
であり、これにより、この部分の弾性表面波の周波数が
低くなる。なお、アルミニウムｌＩ９等の金属薄膜を用
いるのは、真空蒸着やスパッタＮ着を行なう際に信頼性
が高く、しかも、弾性表面波の周波数を下げるのが容易
であるからである。As described above, the frequency is determined by the thickness of the zinc oxide film 8, but it is difficult to control the frequency with high precision only by controlling the thickness of the zinc oxide film 8 itself. Therefore, in the present invention, after determining the approximate frequency by sputter-depositing a zinc oxide film 8, an aluminum film 9 is formed on this surface by sputter-deposition (vacuum deposition or electrolytic plating may also be used), and this film thickness is Finely adjust the frequency by controlling t with high precision. In this case, the fact that the aluminum film 9 is formed on the zinc oxide film 8, which is a piezoelectric thin film, means that the stress on the zinc oxide film 8 becomes large, and this causes the surface acoustic wave in this part to increase. frequency becomes lower. The reason why a metal thin film such as aluminum lI9 is used is that it is highly reliable when performing vacuum evaporation or sputtering N deposition, and it is easy to lower the frequency of surface acoustic waves.
このように、アルミニウム膜９の膜厚ｔをスパッタ蒸着
等によって制御することによって周波数を微調整してい
るので、従来例のようなウエットエツヂフグ法にてくし
形電極そのものを削り取る方法に比して高精度に膜厚制
御（周波数調整）し得、又、従来例のようなドライエツ
チング法に比して製造装置が小さくて済み、低コストで
、かつ、少ない工程で済む。In this way, since the frequency is finely adjusted by controlling the film thickness t of the aluminum film 9 by sputter deposition, etc., this method is compared to the conventional wet etching method in which the comb-shaped electrode itself is scraped off. The film thickness can be controlled with high precision (frequency adjustment), and the manufacturing equipment can be smaller than the conventional dry etching method, resulting in lower cost and fewer steps.
上記のように薄膜作製後、装置を洗浄する。この場合、
一般に化学的安定性に欠ける酸化亜鉛膜８はアルミニウ
ムｇ！９に覆われて外気に接しておらず、このため、装
置全体を洗浄しても酸化亜鉛膜８に悪影響が及ぶことは
ない。After forming the thin film as described above, the apparatus is cleaned. in this case,
Zinc oxide film 8, which generally lacks chemical stability, is made of aluminum g! 9 and is not in contact with the outside air, therefore, even if the entire apparatus is cleaned, the zinc oxide film 8 will not be adversely affected.
以上説明した如く、本発明によれば、くし形電極を削り
取る従来例に比して、金［？膜の膜厚を調整することに
よって周波数を高精度に、かつ、容易に微調整し得、し
かも、製造装置が小形で済むので低コストであり、更に
、圧電体薄膜が金属薄膜によって覆われているので、装
置全体を洗浄しても圧電体ｉＦｌに悪影響がなく、化学
的安定性の高い表面波装置を得ることができる。As explained above, according to the present invention, gold [? By adjusting the thickness of the film, the frequency can be finely adjusted with high precision and easily.Moreover, the manufacturing equipment can be small, so the cost is low.Furthermore, the piezoelectric thin film is covered with a metal thin film. Therefore, even if the entire device is cleaned, there is no adverse effect on the piezoelectric material iF1, and a surface wave device with high chemical stability can be obtained.
第１図は本発明装置の構成図、
第２図は酸化亜鉛膜の位相速度特性図、第３図は一般の
装置の概略図、
第４図は酸化亜鉛股上にくし形電極を形成された装置の
断面図である。
図において、
５はシリコン基板（非圧電体基板）、
６ａ、６ｂはくし形電極、
７は酸化シリコン膜（誘電体ｙｓｍ＞、８は酸化亜鉛膜
（圧電体薄膜）、
９はアルミニウムｌ１ｌ（金属薄膜）
を示す。
第１図
嬉２図
（Ａ） （Ｂ）
くし形：’ｔａｔ４フー悄織のダ１鑵崎（面し友儂ａ１
の和ＥＩＩ＆［萌３図
４／
！！４図Figure 1 is a configuration diagram of the device of the present invention, Figure 2 is a phase velocity characteristic diagram of a zinc oxide film, Figure 3 is a schematic diagram of a general equipment, and Figure 4 is a comb-shaped electrode formed on the crotch of zinc oxide. FIG. 2 is a cross-sectional view of the device. In the figure, 5 is a silicon substrate (non-piezoelectric substrate), 6a and 6b are comb-shaped electrodes, 7 is a silicon oxide film (dielectric ysm>), 8 is a zinc oxide film (piezoelectric thin film), and 9 is an aluminum l1l (metal thin film). ) is shown. Figure 1: Figure 2: (A) (B) Comb: 'tat4 Fu Yuori's Da 1 Aizaki (Moshi Yuki a1
Japanese EII & [Moe 3 Figure 4/! ! Figure 4
Claims (3)
）を形成し、更にその上に圧電体薄膜（８）を設けた構
造の圧電薄膜弾性表面波装置において、上記圧電体薄膜
（８）の表面上に、膜厚を調整して装置の弾性表面波周
波数を調整するための金属薄膜（９）を形成してなるこ
とを特徴とする圧電薄膜弾性表面波装置。(1) Comb-shaped electrodes (6a, 6b) on the non-piezoelectric substrate (5)
), and a piezoelectric thin film (8) is further provided on the piezoelectric thin film surface acoustic wave device, the elastic surface of the device is formed by adjusting the film thickness on the surface of the piezoelectric thin film (8). A piezoelectric thin film surface acoustic wave device comprising a thin metal film (9) for adjusting wave frequency.
覆うように形成してなることを特徴とする特許請求の範
囲第１項記載の圧電薄膜弾性表面波装置。(2) The piezoelectric thin film surface acoustic wave device according to claim 1, wherein the metal thin film (9) is formed to cover the entire piezoelectric thin film (8).
間で、該くし形電極（６ａ，６ｂ）の各電極間に、かつ
、これらの表面を覆うように該電体薄膜（７）を形成し
てなることを特徴とする特許請求の範囲第１項記載の圧
電薄膜弾性表面波装置。(3) Between the non-piezoelectric substrate (5) and the piezoelectric thin film (8), between each electrode of the comb-shaped electrodes (6a, 6b) and so as to cover the surfaces thereof. A piezoelectric thin film surface acoustic wave device according to claim 1, characterized in that a thin film (7) is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27136887A JPH01114110A (en) | 1987-10-27 | 1987-10-27 | Piezoelectric thin film surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27136887A JPH01114110A (en) | 1987-10-27 | 1987-10-27 | Piezoelectric thin film surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01114110A true JPH01114110A (en) | 1989-05-02 |
Family
ID=17499096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27136887A Pending JPH01114110A (en) | 1987-10-27 | 1987-10-27 | Piezoelectric thin film surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01114110A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7327069B2 (en) * | 2005-03-04 | 2008-02-05 | Hon Hai Precision Industry Co., Ltd. | Surface acoustic wave device and method for making same and mobile phone having same |
| KR100856217B1 (en) * | 2006-02-28 | 2008-09-03 | 후지쓰 메디아 데바이스 가부시키가이샤 | Elastic boundary wave device, resonator and filter |
-
1987
- 1987-10-27 JP JP27136887A patent/JPH01114110A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7327069B2 (en) * | 2005-03-04 | 2008-02-05 | Hon Hai Precision Industry Co., Ltd. | Surface acoustic wave device and method for making same and mobile phone having same |
| KR100856217B1 (en) * | 2006-02-28 | 2008-09-03 | 후지쓰 메디아 데바이스 가부시키가이샤 | Elastic boundary wave device, resonator and filter |
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