JPH01111321A - Apparatus and method for aligning by excimer laser contraction and projection - Google Patents

Apparatus and method for aligning by excimer laser contraction and projection

Info

Publication number
JPH01111321A
JPH01111321A JP62269657A JP26965787A JPH01111321A JP H01111321 A JPH01111321 A JP H01111321A JP 62269657 A JP62269657 A JP 62269657A JP 26965787 A JP26965787 A JP 26965787A JP H01111321 A JPH01111321 A JP H01111321A
Authority
JP
Japan
Prior art keywords
excimer laser
laser
shutter
exposure
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62269657A
Other languages
Japanese (ja)
Other versions
JP2615687B2 (en
Inventor
Hideo Nakagawa
秀夫 中川
Masataka Endo
政孝 遠藤
Masaru Sasako
勝 笹子
Kazufumi Ogawa
一文 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62269657A priority Critical patent/JP2615687B2/en
Publication of JPH01111321A publication Critical patent/JPH01111321A/en
Application granted granted Critical
Publication of JP2615687B2 publication Critical patent/JP2615687B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To use an excimer laser in a stable state by interrupting the light of an excimer laser by a shutter before an exposure is started and after it is finished, opening or closing the shutter synchronously with an excimer laser pulse, and moving a stage in step and repeat manner. CONSTITUTION:A controller 6 transmits a signal to a excimer laser 1 for oscillation. If a shutter 2 is opened when the laser 1 is stabilized, the energy of the laser light is simultaneously monitored, and the shutter is closed when a predetermined quantity of energy is stored. Simultaneously, a stage 4 is moved to the position of a next chip, and the shutter 2 is again opened. Then, this operation is repeated, and all the chips are exposed. Thus, the exposure is moved in step and repeat manner by one or more of the number of pulses. In this manner, the laser 1 can be continuously oscillated to be used in a stable state.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体製造技術中のリングラフィ技術に用い
るエキシマレーザ縮少投影露光装置及びそれを用いた露
光方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an excimer laser reduction projection exposure apparatus used in phosphorography technology in semiconductor manufacturing technology and an exposure method using the same.

従来の技術 第３図は、エキシマレーザ縮少投影露光装置の概略図を
示すものであり、１は光源であるエキシマレーザ光を発
生するエキシマレーザである。７はレーザ光の向きを変
えるための反射鏡であり、８はレーザ光強度を均一にす
るためのインテグレータである。９はレーザ光を集光す
るためのコンデンサレンズであり、１ｏはレチクルであ
る。BACKGROUND OF THE INVENTION FIG. 3 is a schematic diagram of an excimer laser reduction projection exposure apparatus, in which 1 is a light source, which is an excimer laser that generates excimer laser light. 7 is a reflecting mirror for changing the direction of the laser beam, and 8 is an integrator for making the intensity of the laser beam uniform. 9 is a condenser lens for condensing laser light, and 1o is a reticle.

１１はレチクルの転写像を縮小するためのりダクション
レンズであり、１２はウェハである。４は！、７．２方
向に移動停止可能なウェハステージである。また、第２
図はエキシマレーザ縮少投影露光装置の制御系統の概略
図を示すプロ、ツク図である。11 is a reduction lens for reducing the transferred image of the reticle, and 12 is a wafer. 4 is! , 7. It is a wafer stage that can move and stop in two directions. Also, the second
The figure is a schematic diagram showing a control system of an excimer laser reduction projection exposure apparatus.

以上のように構成された従来のエキシマレーザ縮少投影
露光装置において、露光はエキシマレーザのパワーのＯ
Ｎ、ＯＦＦ　で行われ、１チ、ツブの露光が終了すると
エキシマレーザをＯＦＦ　　Ｌ、ステージ移動を行い、
移動が終るとエキシマレーザをＯＮするという動作を繰
り返すステ・ツブアンドリピート方式であった。In the conventional excimer laser reduction projection exposure apparatus configured as described above, exposure is performed at the power of the excimer laser.
The excimer laser is turned off, the stage is moved, and the excimer laser is turned off when the exposure of one chip or a dot is completed.
It was a step-turn-and-repeat method that repeated the operation of turning on the excimer laser when the movement was completed.

発明が解決しようとする問題点 しかしながら上記のような構成では、ステージが移動す
る間はエキシマレーザがＯＦＦ　状態であり、ステージ
移動する度にエキシマレーザをＯＮ。Problems to be Solved by the Invention However, in the above configuration, the excimer laser is OFF while the stage is moving, and the excimer laser is turned ON every time the stage moves.

ＯＦＦ　　ｌ、なければならないため、１パルスから数
パルスで１チツプの露光を行う際ドーズ量のバラツキが
大きくなったり、スルーブツトの低下やレーザの信頼性
、寿命がおちる欠点を招くという問題点を有していた。OFF l, which causes problems such as large variations in dose when exposing one chip with one pulse to several pulses, lower throughput, and shortened laser reliability and life. Was.

本発明は、かかる点に鑑み、エキシマレーザを連続発振
動作させ安定な状態で使用し、その周波数に同期させて
ステップアンドリピートによる露光が可能なエキシマレ
ーザ縮少投影露光袋ｅおよび露光方法を提供することを
目的とする。In view of the above, the present invention provides an excimer laser reduction projection exposure bag e and an exposure method, which are capable of performing step-and-repeat exposure in synchronization with the frequency of an excimer laser operated in a stable state by operating the excimer laser continuously. The purpose is to

問題点を解決するための手段 本発明は、エネルギーモニタとシャ・フタを備えたエキ
シマレーザと、エキシマレーザの発振周波数に同期して
ステップアンドリピートで移動可能なウェハステージと
、その制御回路を備えたエキシマレーザ縮少投影露光装
置および露光方法である。つまり、レーザおよびステー
ジを停止させることなく連続動作状態で露光するもので
ある。Means for Solving the Problems The present invention includes an excimer laser equipped with an energy monitor and a shaft lid, a wafer stage movable step-and-repeat in synchronization with the oscillation frequency of the excimer laser, and a control circuit thereof. The present invention provides an excimer laser reduction projection exposure apparatus and an exposure method. In other words, exposure is performed in a continuous operating state without stopping the laser and stage.

作　　用 本発明は前記した構成により、露光開始前及び終了後は
エキシマレーザ光をシャワタによシ遮断しておきエキシ
マレーザパルスに同期させてシャッターの開閉及びステ
ージのステップアンドリピート移動を行うことにより、
エキシマレーザ光の安定した状態で１パルスまたはそれ
以上のパルス数で露光することができる。つまり、エキ
シマレーザ、ステージを連続動作状態で露光する装置お
よび方法である。According to the above-described structure, the present invention blocks the excimer laser light with a shower before the start of exposure and after the end of exposure, and opens and closes the shutter and moves the stage step-and-repeat in synchronization with the excimer laser pulse. ,
Exposure can be performed with one pulse or more pulses in a stable state of excimer laser light. That is, an apparatus and method for exposing an excimer laser and stage in continuous operation.

実施例 第１図は、本発明の第１の実施例におけるエキシマレー
ザ縮少投影露光装置の制御系のブロック図を示すもので
ある。第１図において、１は光源であるエキシマレーザ
、２はエキシマレーザ光のエネルギーをチエツクするモ
ニタとエキシマレーザ光を遮断するためのシャワタを備
えた装置、３はエキシマ縮少投影露光装置の光学系、４
はステラファントリピート移動可能なステージ、６はエ
キシマレーザパルスとステージを同期させるための同期
回路、６はエキシマレーザのオン（ＯＮ）。Embodiment FIG. 1 shows a block diagram of a control system of an excimer laser reduction projection exposure apparatus in a first embodiment of the present invention. In Fig. 1, 1 is an excimer laser that is a light source, 2 is a device equipped with a monitor for checking the energy of the excimer laser beam and a shower for blocking the excimer laser beam, and 3 is an optical system of an excimer reduction projection exposure device. , 4
6 is a synchronization circuit for synchronizing the stage with the excimer laser pulse, and 6 is the ON state of the excimer laser.

オフ（ＯＦＦ）などすべて制御するコントローラである
。This is a controller that controls everything, including turning it off.

以上のように構成された本実施例のエキシマレーザ縮少
投影露光装置について、以下その動作を説明する。The operation of the excimer laser reduction projection exposure apparatus of this embodiment configured as described above will be described below.

コントローラ６からエキシマレーザ１に信号を送シエキ
シマレーザ１を発振させ、エキシマレーザ１が安定した
ところで、シャフタ２を開ると同時にレーザ光のエネル
ギーをモニタし、一定量のエネルギーが蓄積された時点
でシャ・フタを閉じる。A signal is sent from the controller 6 to the excimer laser 1 to cause the excimer laser 1 to oscillate, and when the excimer laser 1 becomes stable, the shutter 2 is opened and at the same time the energy of the laser beam is monitored, and when a certain amount of energy has been accumulated. Close the lid.

同時にステージ４を次のチップ位置まで移動し、また、
シャワタ２を開く。以下この動作を繰り返し全チップを
露光する。このようにして、本装置は１パルスまたはそ
れ以上のパルス数で露光がステップアンドリピート移動
で可能となる。At the same time, stage 4 is moved to the next chip position, and
Open shower 2. This operation is then repeated until all chips are exposed. In this manner, the apparatus allows exposure with one or more pulses in a step-and-repeat motion.

以上のように本実施例によれば、エキシマレーザ光の出
射後にレーザ光のエネルギーモニタとレーザ光を遮断す
るンヤッタを備えた装置を設け、さらにステージ及びエ
ネルギーモニタとシャ、フタを備えた装置をエキシマレ
ーザパルス周波数による同期制御回路を設けることによ
シ、エキシマレーザをＯＮ、ＯＦＦすることなく、レー
ザ光の安定なＯＮ状態のｉｔで使用し、１パルスまたは
それ以上のパルス数でステップアンドリピート露光でき
る。As described above, according to this embodiment, after the excimer laser beam is emitted, a device is provided that is equipped with an energy monitor of the laser beam and a shield that blocks the laser beam, and a device that is further equipped with a stage, an energy monitor, a shutter, and a lid. By providing a synchronization control circuit using the excimer laser pulse frequency, the excimer laser can be used in a stable ON state without turning the excimer laser on or off, and can be used for step-and-repeat with one or more pulses. Can be exposed.

発明の詳細 な説明したように、本発明によれば、エキシマレーザを
、よシ極めて安定な状態で使用可能となり、その結果、
連続動作で用いるためＯＮ、ＯＦＦをくり返すとき、レ
ーザ光のエネルギーばらつきやレーザ光面内ばらつきや
むらは大きく低減する。As described in detail, according to the present invention, an excimer laser can be used in a very stable state, and as a result,
When ON and OFF are repeated for continuous operation, variations in the energy of the laser beam and in-plane variations and unevenness of the laser beam are greatly reduced.

しかも、レーザ光のエネルギーモニタで全露光エネルギ
ーをモニタし一定露光エネルギーでシャワタを閉じるた
め、チップ間の露光エネルギーの変動は極めて小さくな
る。また、レーザを動作状態のまま、ステップアンドリ
ピート露光できるために、レーザのＯＮ、ＯＦＦに要す
る時間やコントローラの信号処理時間を低減することが
でき、非常にスループットが向上する。Furthermore, since the total exposure energy is monitored by a laser beam energy monitor and the shower is closed at a constant exposure energy, variations in exposure energy between chips are extremely small. Further, since step-and-repeat exposure can be performed while the laser is in operation, the time required to turn on and off the laser and the signal processing time of the controller can be reduced, and throughput is greatly improved.

このように、安定な定常状態のエキシマレーザ光を用い
連続かつ均一な露光量で高スループ・フトのステヮプア
ンドリピート露光が可能となり、その実用的効果は非常
に大きい。またこれにより、エキシマレーザ縮少投影露
光装置の実用化が大きく前進する。In this way, it is possible to perform step-and-repeat exposure with a continuous and uniform exposure amount using stable steady-state excimer laser light, with a high throughput, and its practical effects are very large. This also greatly advances the practical application of excimer laser reduction projection exposure apparatuses.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例におけるエキシマレーザ縮少
投影露光装置のプロワク図、第２図は従来の装置のプロ
・ツク図、第３図は従来装置の概略斜視図である。 １・・・・・・エキシマレーザ、２・・・・・・エネル
ギーモニタとシャッタ、３・・・・・・光学系、４・・
・・・・ステージ、５・・・・・・同期用制御回路、６
・・・・・・コントローラ、７・・・・・・反射鏡、８
・・・・・・インテグレータ□、９・・・・Ｏ・コンデ
ンサレンズ、１０・・・・・・レチクル、１１・・・・
・・リダクションレンズ、１２・・・・・・ウェハ。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名／−
−−二午シマレーデ ？−−−二不２レギーモニグとシペツダ３−光字系 ４−　ステージ ５−Ｆ１期用付４イ＠ｌ房Ｒ腎ト 第　１　図　　　　　　　　６−１”１）ｌ−ラｌ−−
工午シマレーブ 、３−一一九学系 ４−　ステージ 第２図　　　　　　　　　６−　コントローラ／−一一
二午シマレ−ｊ−９−−−コンヂンプレンス゛４−クエ
ハステーン°　　ｔｏ−ルテクル７−−Ｘ　躬ｌ免ｔ　
ｔ−−−リダクションレンズ′８・−インテゲレーグ　
　　１２−　　ウニへ第３図FIG. 1 is a schematic diagram of an excimer laser reduction projection exposure apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram of a conventional apparatus, and FIG. 3 is a schematic perspective view of the conventional apparatus. 1...Excimer laser, 2...Energy monitor and shutter, 3...Optical system, 4...
... Stage, 5 ... Synchronization control circuit, 6
...Controller, 7...Reflector, 8
...Integrator □, 9...O condenser lens, 10...Reticle, 11...
...Reduction lens, 12...Wafer. Name of agent: Patent attorney Toshio Nakao and 1 other person/-
--Two-day Shimarade? ---Nifu 2 Regimonig and Shipetsuda 3-Light system 4- Stage 5-F1 stage attachment 4 I@l chamber R kidney 1st Figure 6-1"1) l-ra l--
Kogo Shimare, 3-119 Science System 4- Stage 2nd Figure 6- Controller/-112 No. Shimare-j-9---Condense ゛4-Quehastain ° to-Retekuru 7--X
t---Reduction Lens '8・-Integeregu
12- Figure 3 to the sea urchin

Claims (2)

【特許請求の範囲】[Claims] （１）レーザ光のエネルギーをモニタする装置とシャッ
タを備えたエキシマレーザと、エキシマレーザの発振周
波数に同期して移動するウェハステージと、前記ウェハ
ステージの制御回路を備えてなるエキシマレーザ縮少投
影露光装置。(1) Excimer laser reduction projection comprising an excimer laser equipped with a device for monitoring the energy of laser light and a shutter, a wafer stage that moves in synchronization with the oscillation frequency of the excimer laser, and a control circuit for the wafer stage. Exposure equipment. （２）エキシマレーザを連続動作状態で、前記エキシマ
レーザの周波数に同期させ１パルスまたはそれ以上のパ
ルス数ごとのステップアンドリピートにより露光する露
光方法。(2) An exposure method in which an excimer laser is in continuous operation, synchronized with the frequency of the excimer laser, and exposed by step-and-repeat every one or more pulses.
JP62269657A 1987-10-26 1987-10-26 Excimer laser reduction projection exposure method Expired - Lifetime JP2615687B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62269657A JP2615687B2 (en) 1987-10-26 1987-10-26 Excimer laser reduction projection exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62269657A JP2615687B2 (en) 1987-10-26 1987-10-26 Excimer laser reduction projection exposure method

Publications (2)

Publication Number Publication Date
JPH01111321A true JPH01111321A (en) 1989-04-28
JP2615687B2 JP2615687B2 (en) 1997-06-04

Family

ID=17475403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62269657A Expired - Lifetime JP2615687B2 (en) 1987-10-26 1987-10-26 Excimer laser reduction projection exposure method

Country Status (1)

Country Link
JP (1) JP2615687B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612325A (en) * 1984-06-15 1986-01-08 Hitachi Ltd High energy beam machine
JPS62176129A (en) * 1986-01-29 1987-08-01 Canon Inc Exposure apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612325A (en) * 1984-06-15 1986-01-08 Hitachi Ltd High energy beam machine
JPS62176129A (en) * 1986-01-29 1987-08-01 Canon Inc Exposure apparatus

Also Published As

Publication number Publication date
JP2615687B2 (en) 1997-06-04

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