JPH01108780A - Molecular element - Google Patents
Molecular elementInfo
- Publication number
- JPH01108780A JPH01108780A JP62266888A JP26688887A JPH01108780A JP H01108780 A JPH01108780 A JP H01108780A JP 62266888 A JP62266888 A JP 62266888A JP 26688887 A JP26688887 A JP 26688887A JP H01108780 A JPH01108780 A JP H01108780A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- film
- effect transistor
- field effect
- polyacetylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005426 magnetic field effect Effects 0.000 claims abstract description 11
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920001197 polyacetylene Polymers 0.000 claims abstract description 7
- -1 metal complex compound Chemical class 0.000 claims abstract description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 5
- 229920000767 polyaniline Polymers 0.000 claims abstract description 4
- 239000002861 polymer material Substances 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 102000053602 DNA Human genes 0.000 claims 2
- 108020004414 DNA Proteins 0.000 claims 2
- 229920000642 polymer Polymers 0.000 abstract description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052740 iodine Inorganic materials 0.000 abstract description 4
- 239000011630 iodine Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 150000005837 radical ions Chemical class 0.000 abstract description 2
- 229920002377 Polythiazyl Polymers 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/761—Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Biochemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電極ゲートからの磁界によりスイッチ作用を
する分子素子の電極ゲートの材料構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a material configuration of an electrode gate of a molecular device that performs a switching action by a magnetic field from an electrode gate.
従来、磁界センサーとしてはホール効果素子があったが
必ずしもトランジスタとしての作用をするものではなか
った。Conventionally, Hall effect elements have been used as magnetic field sensors, but they do not necessarily function as transistors.
しかし、上記従来技術によると、磁界効果トランジスタ
作用がないと言う問題があった０本発明は、かかる従来
技術の問題点をな（シ、磁界効果トランジスタを分子の
レベルの大きさで製作を可１除とする磁界効果トランジ
スタのゲート電極材料構成を提供する事を目的とする。However, according to the above-mentioned prior art, there was a problem in that the magnetic field effect transistor did not function.The present invention solves the problem of the prior art. It is an object of the present invention to provide a gate electrode material configuration of a magnetic field effect transistor with a ratio of 1.
上紀問厘点を解決するために、本発明は、分子素子に関
し、磁界効果トランジスタのループ状導電電極ゲートに
は（ＳＮ）ｘ１ポリアセチレン、ポリアニリン、金ｇ４
諸化合物等の有機高分子材を用いるか、あるいはベンゼ
ン環あるいはＤＮＡＱの螺腺伏高分子を用いる手段をと
る。In order to solve the above problems, the present invention relates to a molecular device, and the loop-shaped conductive electrode gate of the magnetic field effect transistor contains (SN)x1 polyacetylene, polyaniline, gold g4
Organic polymer materials such as various compounds are used, or a benzene ring or a spiral polymer such as DNAQ is used.
下１図は本発明の一実施例を示す磁界効果トランジスタ
の断面図である。すなわち、ガラス、石英、サアイヤ等
から成る絶縁基板１の表面に、ＬＤ法（ラングシュア、
プロジェット法）によりポリアチレン２等の膜を形成す
るか、あるいはｃＶＤ（化学蒸着法）、ＰＶＤ（物流蒸
ｃ法）法等により半導体や超電導体膜を形成し、その表
面に、Ｌｌｌ法によるポリ・イミド等の高分子絶縁膜や
ｃｖＤ ヤＩ） Ｖ Ｄ法によルＳ １０ ＊ 、３１
３ Ｎ ａ 、Ａ Ｉ、０．笠のゲート絶縁膜３を形成
し、その上にＬＢ法等によるベンゼン環をもつ高分子や
ＤＮＡ。Figure 1 below is a sectional view of a magnetic field effect transistor showing an embodiment of the present invention. That is, the LD method (Langsure,
A film of polyethylene 2 or the like is formed using a polyethylene 2 film (projet method), or a semiconductor or superconductor film is formed using a cVD (chemical vapor deposition method), a PVD (physical vapor deposition method), etc.・Polymer insulating film such as imide or CVD method
3 N a , A I , 0. A gate insulating film 3 of a cap is formed, and a polymer or DNA having a benzene ring is formed on it by LB method or the like.
あるいは（ＳＮ）ｘｌａ；リアセチレン、ポリアニリン
、金属錯化合物等の導電性高分子膜を形成しそのままル
ープあるいは螺腺状態に保つかあるいは電子ビーム又は
イオービームによるオート・リゾグラフィー技術により
ループ状となし、ループ状ゲート・電極４を形成し、該
ループ状あるいは螺腺吠高分子に電流を流して磁界Ｉ！
を発生させる事により本図の場合はヨウ素ドー１６を施
したポリアセチレン２の膜にＮａドープ６を施したソー
ス及びドレイン電極間に電圧を印加し、ヨウ素ドープ５
の部に発生ずるラジカル・イオンのスピン制御による電
４度詞御を行ない、磁界効果トランジスタ作用を行なわ
せるものである。高感磁部分を絶縁基板１に対し本図の
如く横型ではな（縦型に形成し、その周辺にゲート絶縁
ｌＩ２３を介してループ状にゲート電極を形成しても良
い事は言うまでもない。Or (SN) A loop-shaped gate/electrode 4 is formed, and a current is passed through the loop-shaped or spiral polymer to generate a magnetic field I!
In the case of this figure, a voltage is applied between the source and drain electrodes, which are Na-doped 6, to the polyacetylene 2 film doped with iodine 16, and the iodine-doped 5
By controlling the spin of the radical ions generated in the area, electric quadrature control is performed, and a magnetic field effect transistor action is performed. It goes without saying that the highly magnetically sensitive portion may be formed vertically (rather than horizontally as shown in this figure) with respect to the insulating substrate 1, and the gate electrode may be formed in a loop shape around the portion through the gate insulator 123.
（発明の効果〕
本発明により磁界効果トランジスタが分子のレベルで製
作できる効果がある。(Effects of the Invention) The present invention has the advantage that a magnetic field effect transistor can be manufactured at the molecular level.
第１図は本発明の一実施例を示す磁界効果トランジスタ
の断面図である。
１・・・絶縁基板
２・・・ポリアセチレン
３・・・ゲート絶縁膜
４・・・ループ拭ゲート電極
５・・・ヨウ素ドープ
６・・・Ｎａドープ
以 上
出願人 セイコーエプソン株式会社FIG. 1 is a sectional view of a magnetic field effect transistor showing an embodiment of the present invention. 1...Insulating substrate 2...Polyacetylene 3...Gate insulating film 4...Loop wiping gate electrode 5...Iodine dope 6...Na dope and above Applicant Seiko Epson Corporation
Claims (1)
（ＳＮ）＿ｘ、ポリアセチレン、ポリアニリン金属錯化
合物等の有機高分子材を用いるか、あるいはベンゼン環
あるいはＤＮＡ（デオキシ・リボ核酸）等の螺線状高分
子を用いる事を特徴とする分子素子。For the loop-shaped conductive electrode gate of a magnetic field effect transistor, an organic polymer material such as (SN)_x, polyacetylene, or polyaniline metal complex compound is used, or a spiral polymer material such as a benzene ring or DNA (deoxyribonucleic acid) is used. A molecular device characterized by using.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62266888A JPH01108780A (en) | 1987-10-22 | 1987-10-22 | Molecular element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62266888A JPH01108780A (en) | 1987-10-22 | 1987-10-22 | Molecular element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01108780A true JPH01108780A (en) | 1989-04-26 |
Family
ID=17437049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62266888A Pending JPH01108780A (en) | 1987-10-22 | 1987-10-22 | Molecular element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01108780A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2684677A1 (en) * | 1991-12-06 | 1993-06-11 | Alsthom Cge Alcatel | COPOLYMERES WITH MAGNETIC PROPERTIES COMPRISING AMINO AROMATIC GROUPS AND METHOD OF PREPARATION AND APPLICATIONS THEREOF |
| US7176482B1 (en) | 2000-11-28 | 2007-02-13 | Ramot At Tel-Aviv University | DNA-based electronics |
| JP2008034577A (en) * | 2006-07-28 | 2008-02-14 | Sony Corp | Semiconductor thin film, its forming method, and semiconductor device |
| WO2008047586A1 (en) * | 2006-09-26 | 2008-04-24 | Canon Kabushiki Kaisha | Device |
-
1987
- 1987-10-22 JP JP62266888A patent/JPH01108780A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2684677A1 (en) * | 1991-12-06 | 1993-06-11 | Alsthom Cge Alcatel | COPOLYMERES WITH MAGNETIC PROPERTIES COMPRISING AMINO AROMATIC GROUPS AND METHOD OF PREPARATION AND APPLICATIONS THEREOF |
| US5408034A (en) * | 1991-12-06 | 1995-04-18 | Alcatel Alsthom Compagnie Generale D'electricite | Copolymers having magnetic properties |
| US7176482B1 (en) | 2000-11-28 | 2007-02-13 | Ramot At Tel-Aviv University | DNA-based electronics |
| JP2008034577A (en) * | 2006-07-28 | 2008-02-14 | Sony Corp | Semiconductor thin film, its forming method, and semiconductor device |
| WO2008047586A1 (en) * | 2006-09-26 | 2008-04-24 | Canon Kabushiki Kaisha | Device |
| US8450724B2 (en) | 2006-09-26 | 2013-05-28 | Canon Kabushiki Kaisha | Electrical device containing helical substituted polyacetylene |
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