JPH01108249A - Dielectric composition - Google Patents
Dielectric compositionInfo
- Publication number
- JPH01108249A JPH01108249A JP62262779A JP26277987A JPH01108249A JP H01108249 A JPH01108249 A JP H01108249A JP 62262779 A JP62262779 A JP 62262779A JP 26277987 A JP26277987 A JP 26277987A JP H01108249 A JPH01108249 A JP H01108249A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- dielectric composition
- vinylidene
- ionic crystal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 229920001577 copolymer Polymers 0.000 claims abstract description 9
- 229920000642 polymer Polymers 0.000 claims description 9
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 abstract description 7
- 150000003839 salts Chemical class 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 abstract description 5
- 229920001959 vinylidene polymer Polymers 0.000 abstract description 5
- 150000001768 cations Chemical class 0.000 abstract description 3
- 125000001165 hydrophobic group Chemical group 0.000 abstract description 3
- 229920006254 polymer film Polymers 0.000 abstract description 3
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 abstract description 3
- 239000002033 PVDF binder Substances 0.000 abstract description 2
- VZXFEELLBDNLAL-UHFFFAOYSA-N dodecan-1-amine;hydrobromide Chemical compound [Br-].CCCCCCCCCCCC[NH3+] VZXFEELLBDNLAL-UHFFFAOYSA-N 0.000 abstract description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000007334 copolymerization reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000975 dye Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920000131 polyvinylidene Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- FCYVWWWTHPPJII-UHFFFAOYSA-N 2-methylidenepropanedinitrile Chemical compound N#CC(=C)C#N FCYVWWWTHPPJII-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- PYVHTIWHNXTVPF-UHFFFAOYSA-N F.F.F.F.C=C Chemical compound F.F.F.F.C=C PYVHTIWHNXTVPF-UHFFFAOYSA-N 0.000 description 1
- 229940124913 IPOL Drugs 0.000 description 1
- 229920001166 Poly(vinylidene fluoride-co-trifluoroethylene) Polymers 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920006027 ternary co-polymer Polymers 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Organic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】 ［技術分野］ 本発明は高誘電率をもつ誘電体組成物に関する。[Detailed description of the invention] [Technical field] The present invention relates to dielectric compositions with high dielectric constants.
［従来技術］
ビニリデン系重合体の誘電性に関する文献はすでに数多
く報じられており、たとえば、特公昭５ｇ−２３７３４
号公報、特公昭８０−４６５２８号公報等によって、一
般のプラスチック材料よりも数倍高い誘電率を示すこと
が明らかになっている。[Prior Art] Many documents regarding the dielectric properties of vinylidene polymers have already been reported, for example, Japanese Patent Publication No. 5G-23734
It has been revealed in Japanese Patent Publication No. 80-46528 that it exhibits a dielectric constant several times higher than that of general plastic materials.
しかしながらその値は比誘電率ε゛／ε０で換算してｌ
Ｏ〜１５といった程度であった。従ってコンデンサ材料
として小型大容量化を計った場合も限界があった。さら
に、発明者等はＰＶＤ系重合体中に色素を含有させるこ
とにより、ε−／ε。が数百のオーダーまで増加するこ
とを報じたが［Ｐｏ１ｙ＋ｉｅｒ Ｐｒｅｐｒｌｎｔｓ
、Ｊｐｉ、、３８．１０５Ｂ。However, its value is calculated by converting it into relative permittivity ε゛/ε0.
It was about 0 to 15. Therefore, there was a limit when trying to make capacitor materials smaller and larger. Furthermore, the inventors have achieved ε-/ε by incorporating a dye into the PVD polymer. It was reported that the number of cases increases to the order of several hundred [Poly+ier Preprlnts].
, Jpi, , 38.105B.
（１９８７） ｒ含色素フッ化ビニリデン共重合体の誘
電緩和現象」伊達宗宏他］、色素を使用するために光学
的に活性化して保存安定性に問題が生じ、また工業的に
は生産性・コスト等の面で問題があった。(1987) ``Dielectric relaxation phenomenon of dye-containing vinylidene fluoride copolymers'', Munehiro Date et al.], which causes problems with storage stability due to optical activation in order to use dyes, and problems with productivity and industrial productivity. There were problems in terms of cost, etc.
［目 的］
本発明は、かかる事情に鑑み、誘電率が著しく増大した
新規な誘電体材料を提供することを目的とするものであ
る。[Objective] In view of the above circumstances, an object of the present invention is to provide a novel dielectric material having a significantly increased dielectric constant.
［構 成］
本発明者は上記の課題を解決するため、従来より研究を
重ねてきたが、前記したビニリデン系重合体に色素を含
有させることによる誘電率の向上を研究する過程で、誘
電率の増大が色素本体ではな（、その対イオンに基因し
ていることを見出し、本発明に至った。[Structure] In order to solve the above-mentioned problems, the present inventor has been conducting research for a long time. It was discovered that the increase in chromatography was caused not by the dye itself, but by its counter ion, leading to the present invention.
すなわち、本発明はビニリデン系重合体（以下ＰＶＤ系
重合体という）および該重合体中に含有されたイオン性
結晶からなる誘電体組成物である。That is, the present invention is a dielectric composition comprising a vinylidene polymer (hereinafter referred to as PVD polymer) and an ionic crystal contained in the polymer.
本発明で使用されるイオン性結晶とは少なくとも１つ以
上の疎水基を持ったカチオンから成る塩である。これは
該イオン性結晶中のカチオンの正電荷がＰＶＤ系重合体
分子内で分極した負電荷と静電的に結合するだけでなく
、該結晶中の疎水部分がＰＶＤ系重合体中の炭素鎖との
相互作用によって接合されるために、ＰＶＤ系分子分子
イポールに影響を及ぼすと推定される。The ionic crystal used in the present invention is a salt consisting of a cation having at least one hydrophobic group. This is because not only the positive charge of the cation in the ionic crystal is electrostatically combined with the polarized negative charge within the PVD polymer molecule, but also the hydrophobic part in the crystal is connected to the carbon chain in the PVD polymer. It is presumed that the PVD-based molecule affects the molecule ipol because it is bonded by interaction with the PVD-based molecule.
上記の疎水基としては炭素数１以上の炭素鎖が挙げられ
る。従って該イオン性結晶としては具体的にはカチオン
性界面活性物質等が挙げられるが、さらに具体的には゛
アルキルアンモニウム塩、アルキルスルホニウム塩、ア
ルキルホスホニウム塩、アルキルピリジニウム塩等があ
げられる。また該イオン性結晶の対イオンは特に限定さ
れないが、ハロゲン化物等の単純塩が生産コスト上好ま
しい。Examples of the above hydrophobic group include carbon chains having one or more carbon atoms. Therefore, specific examples of the ionic crystal include cationic surface-active substances, and more specific examples include alkylammonium salts, alkylsulfonium salts, alkylphosphonium salts, and alkylpyridinium salts. Further, the counter ion of the ionic crystal is not particularly limited, but simple salts such as halides are preferred from the viewpoint of production cost.
本発明において使用されているＰＶＤ系重合体には種々
の化合物が報告されているが、例えばポリ弗化ビニリデ
ン、ポリシアン化ビニリデン、弗化ビニリデン及び三弗
化エチレン共重合体、弗化ビニリデン及び四弗化エチレ
ン共重合体、弗化ビニリデン及び弗化ビニル共重合体、
弗化ビニリデン及び六弗化アセトン共重合体、弗化ビニ
リデン、四弗化エチレン及び六弗化プロピレン三成分共
重合体、シアン化ビニリデン及び酢酸ビニル共重合体等
が挙げられる。この中でも弗化ビニリデン及び三弗化エ
チレン共重合体［以下Ｐ （ＶＤＦ−ＴｒＦＥ）と略す
］が好ましい。該Ｐ （ＶＤＦ−ＴｒＦＥ）は共重合比
によりその誘電率が変化するが、本発明はこれら共重合
比に限定されるものではなく、また他のＰＶＤ系重合体
についても同様にその組成比により本発明は限定されな
い。Various compounds have been reported as the PVD polymer used in the present invention, such as polyvinylidene fluoride, polyvinylidene cyanide, vinylidene fluoride and ethylene trifluoride copolymer, vinylidene fluoride, and polyvinylidene trifluoride. Ethylene fluoride copolymer, vinylidene fluoride and vinyl fluoride copolymer,
Examples include vinylidene fluoride and acetone hexafluoride copolymers, vinylidene fluoride, ethylene tetrafluoride and propylene hexafluoride ternary copolymers, vinylidene cyanide and vinyl acetate copolymers. Among these, vinylidene fluoride and ethylene trifluoride copolymers [hereinafter abbreviated as P (VDF-TrFE)] are preferred. The dielectric constant of P (VDF-TrFE) changes depending on the copolymerization ratio, but the present invention is not limited to these copolymerization ratios, and the dielectric constant of P (VDF-TrFE) changes depending on the composition ratio. The invention is not limited.
ＰＶＤ系重合体膜を製膜する方法としては浸漬コーティ
ング、スプレーコーティング、スピナーコーティング、
ブレードコーティング、ローラコーティング、カーテン
コーティング等の溶液塗布法やキャスト法、押し出し成
形法等によって形成することができるが、本発明はこれ
ら製膜方法には限定されない。Methods for forming PVD polymer films include dip coating, spray coating, spinner coating,
Although the film can be formed by a solution coating method such as blade coating, roller coating, or curtain coating, a casting method, or an extrusion method, the present invention is not limited to these film forming methods.
本発明はその構成上コンデンサ構造を形成するため、該
ＰＶＤ系重合体膜を一対の電極でサンドイッチするが、
該電極として使用できるものは金属、合金及びこれらの
酸化物あるいは半導体、導電性ポリマー等が挙げられる
が、本発明はこれら電極材料によっても限定されるもの
ではない。In the present invention, in order to form a capacitor structure, the PVD polymer film is sandwiched between a pair of electrodes.
Examples of materials that can be used as the electrode include metals, alloys, oxides or semiconductors thereof, conductive polymers, etc., but the present invention is not limited by these electrode materials.
以下実施例によって本発明を具体的に説明するが、本発
明はこれら実施例にのみ限定されるものではない。EXAMPLES The present invention will be specifically explained below with reference to Examples, but the present invention is not limited only to these Examples.
実施例１
共重合比８５／ ３５のＰ （ＶＤＦ−ＴｒＦＥ）溶液
中に該Ｐ （ＶＤＦ−ＴｒＦＥ）の０．５ｖｔ％量に相
当する臭化テトラブチルアンモニウムを分散して、アル
ミニウムを蒸着したガラス上に、スピンコード法により
厚さ １μｍで塗布し、乾燥後さらに上部電極として該
Ｐ （ＶＤＦ−ＴｒＦＥ）Ｉｌｌｉ上にアルミニウムを
蒸着してサンプルを形成した。比較例と同一周期の交流
電界をＩＯＶ印加し、該Ｐ （ＶＤＦ−ＴｒＦＥ）膜の
比誘電率を測定したところ、明らかに直流伝導とは異な
る誘電率の上昇が観測されて、その値は約８００に達す
ることが判明した。Example 1 Glass on which aluminum was vapor-deposited by dispersing tetrabutylammonium bromide corresponding to 0.5 vt% of P (VDF-TrFE) in a P (VDF-TrFE) solution with a copolymerization ratio of 85/35. A sample was formed by applying aluminum to a thickness of 1 μm on the P (VDF-TrFE) Illi as an upper electrode after drying. When the relative dielectric constant of the P (VDF-TrFE) film was measured by applying an AC electric field with the same period as that of the comparative example at IOV, an increase in the dielectric constant that was clearly different from that of DC conduction was observed, and the value was approximately It turned out that it reached 800.
実施例２
厚さ２０μ−の共重合比７９／ ２１のＰ （ＶＤＦ−
Ｔ ｒ Ｆ Ｅ）キャスト膜を５ν【％濃度の臭化テト
ラブチルアンモニウム水溶液中に含浸させて、一定時間
放置した。乾燥後、該キャスト膜の両面に金を蒸着して
サンプルを形成した。以下比較例と同様の方法で、該サ
ンプルに２５Ｖ・ ２．５１１２の交流電界を印加して
該キャスト膜の比誘電率を測定したところ室温で約４０
０に達することが判明した。Example 2 P (VDF-
T r F E) The cast film was impregnated in an aqueous solution of tetrabutylammonium bromide at a concentration of 5 ν% and left for a certain period of time. After drying, gold was deposited on both sides of the cast film to form a sample. The dielectric constant of the cast film was measured by applying an AC electric field of 25V/2.5112 to the sample in the same manner as in the comparative example, and found that it was approximately 40 at room temperature.
It turns out that it reaches 0.
実施例３
臭化モノドデシルアンモニウム塩を０．５ｗｔ％量加え
た共重合比７３／２７Ｐ （ＶＤＦ−ＴｒＦＥ）溶液か
らキャスト法によって厚さ４０μ−の薄膜を作成して、
その両面に金を蒸着してサンプルを作成した。５０Ｖ・
１ｌｌｚの交流電界を印加してその比誘電率を測定した
ところ該比誘電率が室温で約５００に達することが判明
した。Example 3 A thin film with a thickness of 40μ was created by a casting method from a copolymerization ratio 73/27P (VDF-TrFE) solution to which 0.5 wt% of monododecylammonium bromide salt was added.
A sample was created by depositing gold on both sides. 50V・
When an alternating current electric field of 1 llz was applied and the relative permittivity was measured, it was found that the relative permittivity reached approximately 500 at room temperature.
実施例４
実施例１で使用したサンプルを加温して、８０℃におけ
る比誘電率を２５Ｖ −１０Ｈ２の交流電界を印加して
／ｉＰｊ定を行ったところ、該比誘電率が約１０００に
達することが判明した。Example 4 When the sample used in Example 1 was heated and the relative permittivity at 80°C was determined by applying an AC electric field of 25V-10H2, the relative permittivity reached approximately 1000. It has been found.
実施例５
実施例２で使用したサンプルを加温して、１００℃にお
ける比誘電率を２５Ｖ−１０１（ｚの交流電界を印加し
てｎ１定を行ったところ、該比誘電率が約１２００に達
することが判明した。Example 5 When the sample used in Example 2 was heated and the relative permittivity at 100° C. was 25V-101 (an alternating current electric field of z was applied to perform n1 constant), the relative permittivity was approximately 1200. It turned out that it reached.
比較例
共重合比８５／ ３５のＰ （ＶＤＦ−ＴｒＦＥ）をキ
ャスト法により厚さ２０μ謬の薄膜を製膜した。Comparative Example A thin film having a thickness of 20 μm was formed by casting P (VDF-TrFE) with a copolymerization ratio of 85/35.
さらに該Ｐ （ＶＤＦ−ＴｒＦＥ）ＩＮ！の両面に各々
金を蒸着したサンドイッチ構造のサンプルを作成した。Furthermore, the P (VDF-TrFE)IN! A sample with a sandwich structure was created in which gold was deposited on both sides.
該サンプルの一方の電極に１５ｖ−ＩＨｚの交流電界を
印加し、他方の電極からその応答を電荷増幅器を通して
測定し、該Ｐ（ＶＤＦ−ＴｒＦＥ）の比誘電率を測定し
たところ、２０℃において約１５．０であった。An alternating current electric field of 15 V-IHz was applied to one electrode of the sample, and the response from the other electrode was measured through a charge amplifier, and the dielectric constant of the P(VDF-TrFE) was measured. It was 15.0.
［発明の効果］
以上の説明から明らかなように、本発明の構成による誘
電体組成物は、ＰＶＤ系重合体中にイオン性結晶を含有
せしめるという簡単な方法により得ることができ、しか
もそれによりＰＶＤ系重合体の誘電率を著しく増大する
ことができる。[Effects of the Invention] As is clear from the above description, the dielectric composition according to the present invention can be obtained by a simple method of incorporating ionic crystals into a PVD polymer. The dielectric constant of PVD polymers can be significantly increased.
そして、このように誘電率が増大した本発明の組成物は
、超小型大容量コンデンサ等にを用なものである。The composition of the present invention having such an increased dielectric constant is used for ultra-small, large-capacity capacitors, and the like.
Claims (1)
イオン性結晶からなる誘電体組成物。A dielectric composition comprising a vinylidene copolymer and an ionic crystal contained in the polymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262779A JPH01108249A (en) | 1987-10-20 | 1987-10-20 | Dielectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62262779A JPH01108249A (en) | 1987-10-20 | 1987-10-20 | Dielectric composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01108249A true JPH01108249A (en) | 1989-04-25 |
Family
ID=17380480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62262779A Pending JPH01108249A (en) | 1987-10-20 | 1987-10-20 | Dielectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01108249A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0844652A1 (en) * | 1996-11-08 | 1998-05-27 | Siemens Aktiengesellschaft | Integratable capacitor, its fabrication method and memory array utilizing the capacitor |
-
1987
- 1987-10-20 JP JP62262779A patent/JPH01108249A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0844652A1 (en) * | 1996-11-08 | 1998-05-27 | Siemens Aktiengesellschaft | Integratable capacitor, its fabrication method and memory array utilizing the capacitor |
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