JPH01108221A - Epoxy resin composition and material for sealing semiconductor device and material for laminate - Google Patents

Abstract

PURPOSE:To obtain an epoxy resin composition having excellent heat resistance, low water absorptivity and moisture permeability and useful as a sealing material for semiconductor devices and a material for laminates, by using a polymer having specified structural units. CONSTITUTION:This epoxy resin composition comprises a fluorinated epoxy resin (A) comprising structural units of formula I or II and structural units of formula III or IV or a fluorinated epoxy polymer (B) comprising structural units of formula V and structural units of formula VI, wherein R', R'' and R''' are each F, CF3, C2H5 or C3F7, X1 and X3 are each H, -CH3, -C(CH3)3, -C(CF3)3 or formula VII (wherein R', R'' and R''' are as defined above), formula VIII or the like, and X2 and X4 are each formula IX or the like. This resin composition has excellent heat resistance, low water absorptivity and low moisture absorptivity and is useful as a material for sealing semiconductor devices and a material for laminates.

Description

Detailed Description of the Invention [Industrial Field of Application] The present invention relates to an epoxy resin composition with excellent heat resistance and low water absorption and moisture permeability, an encapsulant for semiconductor devices made of the composition, and a sealant for semiconductor devices comprising the composition. The present invention relates to a laminate material comprising a composition.

[Conventional technology]

Conventionally, epoxy-based materials using a novolac type phenol resin as a curing agent have been the mainstream for resin compositions for encapsulating resin-encapsulated semiconductor devices. However, with the increase in the degree of integration of semiconductor devices and the expansion of applications for resin-sealed semiconductor devices, resin compositions for encapsulation have improved heat resistance, moisture resistance, and adhesion, and are also low-stress. There is a strong desire to develop a resin composition capable of

[Problem that the invention seeks to solve]

However, phenol novolak resin-cured epoxy compositions have a limited ability to improve heat resistance, especially the glass transition point, and have relatively high water absorption and moisture permeability. There was an essential problem in preventing the intrusion. As a countermeasure to this problem, attempts have been made to modify the property by adding siloxane-based or fluoro-based surface treatment agents, but these methods also cause problems such as mold stains during molding and problems that need improvement in the appearance of the molded product. be.

An object of the present invention is to provide an epoxy resin composition with excellent heat resistance and low water absorption and moisture permeability, a sealant for semiconductor devices made of the composition, and a material for laminates made of the composition. It is in.

[Means for solving problems]

The above object is achieved by employing the following configuration. That is, the first invention is an epoxy resin composition characterized by containing the following compound [A] or (B).

[A] Type 2 Constituent unit and formula represented by or A fluorine-containing epoxy resin consisting of the structural unit represented by

[B] A fluorine-containing epoxy polymer comprising a structural unit represented by the following formula and a structural unit represented by the formula.

However, in the above formula, R', R' and R' are F and CFa.

Any of C2FB and C3FT may be the same or different, and XI and X3 are H.

-CHa, -C(CHa) 3? C (CF3)
st\ R″″′ (q is -CHz r C(CHs) 2*C
(CF a ) 2 -〇-, -S- or -8O2
), and X2 and C(CF3)2 are -or s- or -802
)-.

Further, a second invention is a sealant for a semiconductor device comprising the epoxy resin composition of the first invention, and a third invention is a sealant for a laminate comprising the epoxy resin composition of the first invention. It is the material.

Note that in the present invention, conventionally known polyfunctional epoxy resins can also be used. Such substances include, for example, diglycidyl ether of bisphenol A, butadiene diepoxide, 3,4-epoxycyclohexylmethyl-(
3,4-epoxy)cyclohexane carboxylate,
Vinylcyclohexane dioxide, 4,4'-di(1,
2-Epoxyethyl) dibiphenyl ether, 4,4'
-(1,2-epoxyethyl)biphenyl, 2゜2-bis(3,4-epoxycyclohexyl)propane, glycidyl ether of resorcinol, diglycidyl ether of phloroglucin, diglycidyl ether of methylphloroglucin, bis-(2゜3-Epoxycyclopentyl)
Ether, 2-(3,4-epoxy)cyclohexane-
5,5-spiro(3,4-epoxy)-cyclohexane-m-dioxane, bis-(3,4-epoxy-6-methylcyclohexyl)adipate, N,N'-m-phenylenebis(4,5-epoxy Difunctional epoxy compounds such as -1°2-cyclohexane) dicarboximide, triglycidyl ether of paraaminophenol, polyallyl glycidyl ether, 1,3.5-tri(1,
2-epoxyethyl)benzene, 2.2', 4.4'
Tri- or higher functional epoxy compounds are used, such as -tetraglycidoxybenzophenone, tetraglycidoxytetraphenylethane, polyglycidyl ether of phenol formaldehyde novolac, triglycidyl ether of glycerin, and triglycidyl ether of trimethylolbroban.

Fluorine-containing epoxy resin [A] or (B) used in the present invention
is, for example, a phenolic resin and a formula (wherein R is F or C
F s, R', R' and HCF
A fluorine-based compound represented by sHCzF sy Cs F 7 (7) (which may be the same or different) is reacted with heat in the presence of a basic catalyst such as triethylamine. can get. For a detailed explanation of the reaction, reference may be made to the method described in 1, Journal of the Chemical Society of Japan, 1978, p. 253.

Formula [wherein R is F or CFa, R', R' and R
1 is F, CFst C2Fl5. C3F7 (71
They may be the same or different. ] Examples of the fluorine-based compound represented by hexafluoropyrene and/or hexafluoropyrene oligomer include F CF3 F2CF3 / (CFa) 2C=CD-2 \ F CFzCFxCFs F CFa CFs CFzCFa, etc. It is commercially available from ICI Mond Division and others. Among the above compounds, in exerting the effects of the present invention.

CFa \ F / F3 Alternatively, D-2 and T-2 are preferred.

Further, the fluorine-containing epoxy resin (B) is obtained by reacting a hydroxystyrene polymer with the above-mentioned fluorine-based compound.

The reactant obtained by the above reaction is the above (1).

m units of (2) or (5) in one molecule.

It is preferable that n units represented by formula (3), (4) or (6) are included, m is 1 to 18, and m+n is 1 to 20.

Examples of the above reactants include those consisting of the following units.

and so on.

Next, this fluorine-containing phenolic compound is treated in the presence of a hydrogen chloride scavenger 1, such as NaOH, pyridine, etc.
By reacting with epichlorohydrin, a fluorine-containing epoxy compound represented by general formula [A] or [B], which is an essential component of the present invention, can be obtained. That is, in the present invention, the fluorine-containing epoxy resin can be obtained, for example, by the following method.

υ■ In the present invention, the fluorine-containing epoxy resin is, for example,
Specifically, there are the following.

Furthermore, the following formula (wherein, Y
The heat resistance of the cured product can be improved by adding an N,N'-substituted bismaleimide compound represented by (where Z represents a hydrogen atom or a methyl group and Z represents a divalent organic group). . General formula (N, N'- represented by rl)
[Replaced bismaleimide compounds include 1, for example, N,N'-ethylene dimaleimide, N,N'-ethylenebis(2-
methylmaleimide), N,N'-trimethylenecymaleimide, N.

N'-tetramethylene dimaleimide, N,N'-hexamethylene dimaleimide, N,N''-hexamethylene bis(2-methylmaleimide), N,N'-dodecamethylene dimaleimide, N,N'- m-phenylene dimaleimide, N, N'-p-phenylene dimaleimide, N, N
'-(oxy-di-p-phenylene) simaleimide,
N, N'-(methylene-di-p-phenylene) simaleimide, N, N'-2,4-tolylene dimaleimide,
N, N'-2,6-tolylene dimaleimide, N, N'
-m-quidylene dimaleimide, N,N'-p-quidylene dimaleimide and N,N'-oxydipropylene dimaleimide, or/and general formula (II) ([l] (wherein R1-R4 is Represents hydrogen, a lower alkyl group, a lower alkoxy group, chlorine or bromine, and may be the same or different. R5 and R6 are hydrogen, a methyl group, an ethyl group, a trifluoromethyl group, or a trichloromethyl group. , DI, and Dz each represent a divalent organic group having 2 to 24 carbon atoms. , 2,2-bis[3
-Methyl-4-(4-maleimidophenoxy)phenyl]propane, 2,2-bis[3-chloro-4-(4-maleimidophenoxy)phenyl]propane, 2゜2-bis[3-bromo-4-( 4-Maleimidophenoxy)phenyl]propane, 2,2-bis[3-ethyl-4-(
maleimidophenoxy)phenyl]propane, 2,2-
Bis[3-propyl-4-(4-maleimidophenoxy)phenyl]propane, 2゜2-bis[3-isopropyl-4-(4-maleimidophenoxy)phenyl]propane, 2,2-bis[3-butyl- 4-(4-maleimidophenoxy)phenyl]propane, 2,2-bis[3
5ec-butyl-4-(4-maleimidophenoxy)phenyl]propane, 2,2-bis[3-methoxy-4-
(4-maleimidophenoxy)phenyl]propane, 1
゜1-bis(4-(4-maleimidophenoxy)phenyl)ethane, 1,1-bis[3-methyl-4-(4-maleimidophenoxy)phenyl]ethane, 1,1-bis[3-chloro-4 -(4-maleimidophenoxy)phenyl]ethane, 1,1-bis[3-bromo-4-(4-
maleimidophenoxy)phenyl]ethane, bis(4-
(4-Maleimidophenoxy)phenylcomethane, bis[3-methyl-4-(4-maleimidophenoxy)phenylcomethane, bis[3-chloro-4-(4-maleimidophenoxy)phenylcomethane, bis[3- Bromo
4-(4-maleimidophenoxy)phenylcomethane,
i, 1,1,3,3.3-hexafluoro-2,2-bis(4-(4-maleimidophenoxy)phenyl)propane, 1,1,1,3°3.3-hexachloro-2,2
-bis(4-(4-maleimidophenoxy)phenyl)
Propane, 3,3-bis(4-(4-maleimidophenoxy)phenyl)pentane, 1,1-bis(4-(4-
maleimidophenoxy)phenyl]propane, 1°1.
1,3,3.3-hexafluoro-2,2-bis[3,
5-dibromo-4(4-maleimidophenoxy)phenyl]propane, 1,1,1,3゜3.3-hexafluoro-2,2-bis[3-methyl-4(4-maleimidophenoxy)phenyl]propane and so on.

Also, in the epoxy resin composition of the present invention.

General formula Cm), (IV) Alternatively, [where DI, 02 is a divalent organic group having 2 to 24 carbon atoms and containing at least a polymerizable ethylenically unsaturated double bond. They may be the same or different. Also, X3. X4 Ha F3 ■ -C-, -CO-, -〇-, -s-, -so! -F
It is one of a. ), and may be the same or different. Further, R', R', and R'''' are the same as above. ] A fluorine-containing, unsaturated imide compound represented by the following can be added. For example, the epoxy resin composition of the present invention includes:
The following formula [wherein R', R', and R'' are the same as above.

] It is also possible to add a fluorine-containing phenolic resin represented by the following.

Further, the epoxy resin composition of the present invention may be represented by the general formula [■] or the general formula (VI) or Ha ■ [in the formula, X6. No X8, CHz y C+ H
3Fa, and may be the same or different from each other. R', R'', and R'' are the same as above. It is also possible to add a fluorine-containing diallylphenol compound represented by the following formula. Examples of this include:

／　＼ (CF3)2FCCF(CF3)2 and so on.

A conventionally known curing agent can also be used in combination with the epoxy resin composition of the present invention. They are written by Hiroshi Kakiuchi: Epoxy Resin (Published September 1970) 109~]-49 pages, L
ee, by Neville: Epoxy Resin
s(Me Graw-11i11 Book Comp
any Inc: New York.

Published in 1957) pages 63-141, pJ, 3run
is written by: Epoxy Re5ins Technol
ogy (InterscienteePublish
rs, New Work, published 1968) 45~
Compounds described on page 111, such as aliphatic polyamines, aromatic polyamines, amines including secondary and tertiary amines, carboxylic acids, carboxylic acid anhydrides, aliphatic and aromatic polyamide oligomers and polymers. , boron trifluoride-amine complexes, synthetic resin initial condensates such as phenol resin, melamine resin, urea resin, and urethane resin, as well as dicyandiamide, carboxylic acid hydrazide, and polyaminomaleimide.

One or more of these curing agents can be used depending on the use and purpose.

In the resin composition of the present invention, a catalyst that promotes the curing reaction between the epoxy compound and the fluorine-containing novolak phenol resin can be used.

Such catalysts include, for example, tertiary amines such as triethanolamine, tetramethylbutanediamine, tetramethylpetanediamine, tetramethylhexanediamine, triethylenediamine, dimethylaniline, dimethylaminoethanol, dimethylaminopetanol, etc. Oxyalkylamines and tris(dimethylaminomethyl)
There are amines such as phenol, N-methylmorpholine, and N-ethylmorpholine.

Also, cetyltrimethylammonium bromide, cetyltrimethylammonium chloride, dodecyltrimethylammonium iodide, trimethyldodecylammonium chloride, benzyldimethyltetradecylammonium chloride, benzylmethylpalmitylammonium chloride, allyldodecyltrimethylammonium bromide, benzyldimethylstearylammonium bromide, stearyl There are quaternary ammonium salts such as trimethylammonium chloride and benzyldimethyltetradecylammonium acetate.

Also, 2-ethylimidazole, 2-undecylimidazole, 2-heptadecyl imidazole, 2-methyl-
4-ethylimidazole, 1-butylimidazole, 1
-Propyl-2-methylimidazole, 1-benzyl-
2-Methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-azine-2-methylimidazole, 1-azine-2-undecyl Imidazole such as imidazole, triphenylphosphine tetraphenylborate, tetraphenylphosphonium tetraphenylborate, triethylamine tetraphenylborate, N-methylmorpholinte I-raphenylborate, 2-ethyl-4-
Examples include tetraphenylborate such as methylimidazoletetraphenylborate and 2-ethyl-1,4-dimethylimidazoletetraphenylborate.

Also, 1,5-diaza-bicyclo(4,2,O)octene-5,1,8-diaza-bicyclo(7゜2,O)undecene-8,1,4-diaza-bicyclo(3,3, O)
octene-4,3-methyl-1,4-diazabicyclo(
3,3,O)octene-4,3,6,7,7-tetramethyl-1,4-diazadicyclo(3,3,O)octene-4,1,5-diaza-bicyclo(3,4,O ) Nonene-5,1,8-diaza-bicyclo(7,3,O) Dodecene-8,1,7-diazabicyclo(4,3゜0) Nonene-6,1,5-diazabicyclo(4゜4.0 ) Decene-5,1,8-diazabicyclo(7,4,O) Tridecene-8,1,8-diazabicyclo(5,3,O)Decene-7,9-methyl-1,8-diazabicyclo(5,
3,O) Decene-7,1,8-diazabicyclo(5,4
,O) undecene-7,1,6-diazabicyclo(5,
5゜O) dodecene-6,1,7-diazabicyclo(6゜5,O) tridecene-7,1,8-diazabicyclo(7
,5,O) Tetradecene-8,1,10-diazabicyclo(7,3,O) Dodecene-9,1゜10-diazabicyclo(7,4,O) Tridecene-9,1,14
-diazabicyclo(11,3,O)hexadecene-13
Also useful are diazabicyclo-alkenes such as , 1,14-diazabicyclo(11,4,0)butadecene-13. One or more of these compounds can be used in combination depending on the purpose and use. Among these compounds, especially 1,8-diazabicyclo(5,4,O)undecene-
7 (DBU) and carboxylic acid salts of this compound are effective in exhibiting the effects of the present invention.

In the present invention, various inorganic substances and additives can be added to the resin composition depending on the purpose and use. Specific examples include zircon, silica, fused silica glass, alumina, aluminum hydroxide, glass, quartz glass, calcium silicate, gypsum, calcium carbonate, magnesite, and clay.

Kaolin, talc, iron powder, copper powder, mica, asbestos,
silicon carbide, boron nitride, molybdenum disulfide, lead compounds,
Fillers such as lead oxide, zinc white, titanium white, carbon black, mold release agents such as higher fatty acids and waxes, epoxysilane, vinylsilane, aminosilane, borane compounds, alkoxytitanate compounds, aluminum chelate compounds, etc. coupling agents, etc. Furthermore, known flame retardants containing antimony, phosphorus compounds, bromine and chlorine can be used.

The epoxy resin composition of the present invention has excellent heat resistance, low water absorption and moisture permeability, and good adhesion to total bending, so it is useful as a sealant for semiconductor devices, and is useful as a sealant for semiconductor devices. It is used to cover and seal lead wires.

When the composition of the present invention is used to seal a semiconductor device, the method is not particularly limited, and known methods such as casting and transfer molding can be applied.

Furthermore, since the epoxy resin composition of the present invention has excellent heat resistance and moisture resistance, it is also useful as a material for stacking boards.

[Example]゛1-6 Next, the present invention will be explained by examples.

-Production of fluorine-containing modified polymer- 100 parts by weight of novolac type phenolic resin HP-607N (manufactured by Hitachi Chemical Co., Ltd.) is heated to 100 to 120°C to melt it, and hexafluoropropylene (HEP) is added to this.
Trimer (T-2), 1.0 parts by weight, 5.0 parts by weight, 1
0 parts by weight of each were added separately and 0.0 parts by weight of triethylamine.
2 mQ was added thereto, and the mixture was heated and reacted at 100 to 120°C for 15 minutes to obtain three types of hexafluoropropylene-modified phenol resins.

1, OP-T-2A 5, OP-T-2B 10P-T-2C ・HEP dimer (D-2) was added to 100 parts by weight of P-hydroxystyrene polymer M resin (manufactured by Maruzen Oil Co., Ltd.).

(CF3) ZC=CFCF2CF3 and HEP trimer (T-1) F CFzCFzCF3 and 20 parts by weight of HEP trimer (T-2) were added separately,
Add 0.5 mQ of triethylamine to these, heat and melt reaction to obtain hexafluoropropylene modified P-
Three types of hydroxystyrene polymers were obtained.

Type of HEP oligomer Reactant HEP dimer (D-2) M-D-2AHEP dimer (T
-1) M-T-IA (T-2) M-T
-2A As described above, six types of fluorine-containing phenol resins and six types of fluorine-containing M resin were reacted with epichlorohydrin to obtain six types of fluorine-containing epoxy resins.

[Example] 7 to 17 As an epoxy compound, PT-2AE, PT-2B
E, PT-2GE, M-D-2AE.

We picked up six types of M-T-LAE and M-T-2AE,
As a curing agent, PT-2A, M, T-2A.

Novolak type phenolic resin HP-607N (manufactured by Hitachi Chemical Co., Ltd.), poly P-hydroxystyrene M resin (Maruzen Oil Co., Ltd. 1a), and 2,2-bis[4-(4-maleimidophenoxy)phenyl]hexafluoropropane. Eleven types of formulations were made by selecting various types and blending them in the predetermined amounts listed in Table 1. This blend contains 3.0 parts by weight of triphenylphosphine as a catalyst, an amylate alkoxy titanate compound, and 2.0 parts of S-181 (manufactured by Nippon Soda Co., Ltd.) as a coupling agent.
parts by weight, 0.6 parts by weight of epoxy silane compound KBM403 (manufactured by Shin-Etsu Chemical Co., Ltd.), 2.5 parts by weight of carnabe wax as a mold release agent, 3 parts by weight of addition-type imide coat red phosphorus as a flame retardant, and filling. As materials, 30 weight percent of spherical fused silica glass powder, 60 weight percent of spherical alumina powder with an average particle size of 1 μm, and as a coloring agent, 2 parts by weight of carbon black (manufactured by Cabot Corporation) were blended.

Next, the mixture was heated and mixed for a minute using two 8-inch diameter rolls heated to 75 to 85°C, cooled, and coarsely pulverized to obtain the desired resin composition for semiconductor encapsulation.

The resin composition was heated at 180° C., 70 kg/c+J, 1.
Table 1 shows the results of measuring the water absorption rate of the cured product that was transfer molded for 5 minutes.

Moreover, using this resin composition, IM bit D-RAM
Memory LSI, 180℃, 70 kg/aJ.

Transfer molding was performed for 1.5 minutes. Fifty resin-sealed LSIs were left in supersaturated water vapor at 121 degrees Celsius for a predetermined period of time (Pressure Test (PCT)), then taken out and tested to see if the LSIs operated electrically. I checked.

For defective products, the metal on the LSI element (AQ
) It was confirmed that the problem was caused by corrosion of the wiring. The moisture resistance reliability of the resin-sealed LSI was evaluated based on the degree of occurrence of the defective rate. In addition, solder bath (260
℃) for 15 seconds, the same evaluation of moisture resistance reliability as above was performed.

The results are shown in Table 1.

[Example] 18 Epoxy compound + PT-2AE, 40.0 parts by weight, 2,2-bis(4-(4-maleimidophenoxy)phenyl]hexafluoropropane 40 parts by weight, dicyandiamide 8 parts by weight, Imidazole 2E4MZ-CN
0.5 parts by weight (manufactured by Shikoku Kasei Co., Ltd.) was dissolved in a mixture of equal amounts of N-methyl-2-pyrrolidone and MEK to prepare 8 weight percent varnish 10100O. Then, it was immersed in a glass fiber cloth (WF-230 manufactured by Nittobo Co., Ltd.). This impregnated prepreg sheet was heated and dried at 100 to 120'C for about 3 hours to obtain a prepreg. The resin content of this prepreg was 49% by weight.

Next, the six prepregs obtained were stacked at 150-160°C.
Compression molding was carried out under the conditions of 50 kg-f/a If for 2 hours.

The tensile strength of the molded product is 19.5 kg/datloo℃
(ASTM, D-638), bending strength is 20.8 kg
/'cofatl OO℃(A S TM, D”79
0), Izotsu impact strength (with notch) is 15 kg-
cnl aJ at 25°C (ASTM, D-256)
Met.

This polymer was dissolved in toluene to prepare a 1% by weight resin solution. The device structure when this solution is used as a multilayer (two-layer) wiring insulating film is shown in FIGS. 2 and 3.

The structure of the device consists of a 5iC1z insulating layer on a Si device substrate,
Polysilicon layer, and then the first layer of aluminum wiring (
41), a resin coating material was applied (using a spinner) and baked (250°C, 60 minutes) (3-1).
) After that, a positive resist was applied and patterning of the multi-holes was performed. Next, plasma etching was performed using CFa-Ox as a reaction gas. Next, the positive resist was removed by a plasma asher using O2 as a reactive gas.

Next, after forming the second layer of aluminum wiring (4-11), the above-mentioned resin liquid was further applied and baked (under the same conditions as above). (3-11 layers) FIG. 2 shows a case (5 layers) in which polyimide resin (PIQ, manufactured by Hitachi Chemical) was used as the coating resin for the second layer.

Memory LSI products (], M-bit D-RAM, in which the semiconductor device of the present invention is resin-packaged using an epoxy resin molding material using phenol novolac resin as a hardening agent)
memory) is 85°C.

Even after 2,000 hours of application of bias in 85% relative humidity,
There were no disconnection failures due to corrosion of the AQ wiring, and an LSI with excellent moisture resistance and reliability was obtained.

(Epoxy resin acid for sealing) Novolac type epoxy resin 100 parts by weight Phenol-formaldehyde resin 55 parts by weight Imidazole catalyst 3 parts by weight Fused silica glass powder 480 parts by weight Epoxy silane
2 parts by weight of wax
2 parts by weight carbon black
1 part by weight of this blended composition, 70-80%
After kneading for ten minutes using two rolls heated to 0.degree. C., the mixture was roughly pulverized to prepare a sealing resin composition.

In addition to resin sealing, sealing using cans, solder-fused ceramics, glass-fused ceramics, etc. can be employed as a method for sealing the semiconductor element coated with this coating.

〔Effect of the invention〕

A molded article obtained by curing the resin composition of the present invention has a low water absorption rate and excellent heat resistance. For this reason, by applying it to laminated materials, molding materials, etc., products using these,
For example, it has an effect on the reliability of LSI.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a resin-encapsulated semiconductor device using the resin composition of the present invention as a coating material, and FIGS. FIG. 3 is a cross-sectional view of a portion of the LSI when DESCRIPTION OF SYMBOLS 1... Lead wire, 2... Semiconductor element, 3... Protective coating resin, 5... Condensed polyimide PIQ, 6...
Mold resin, 7... thermal oxidation film.

Claims (1)

[Claims] 1. An epoxy resin composition comprising the following compound [A] or [B]. [A]: Formula▲There are mathematical formulas, chemical formulas, tables, etc.▼(1) Or, formula▲There are mathematical formulas, chemical formulas, tables, etc.▼(2) There are ▼ (3) or ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (4) A fluorine-containing epoxy resin consisting of the structural units shown. [B]: Formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (5) A structural unit represented by the formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (5) Fluorine-containing epoxy polymer consisting of the structural unit represented by Combined. However, in the above formula, R', R'' and R''' are F, CF_3,
C_2F_5, C_3F_7, which may be the same or different, and X_1 and X_3 are H, -CH_3, -C(CH_3)_3, -C(CF
＿３）＿３、▲There are mathematical formulas, chemical formulas, tables, etc.▼(R'
, R″ and R′″ are the same as above), ▲Mathematical formulas, chemical formulas, tables, etc.▼・CH_
2・▲There are mathematical formulas, chemical formulas, tables, etc.▼ or▲There are mathematical formulas, chemical formulas, tables, etc.▼・CH_2・▲
There are mathematical formulas, chemical formulas, tables, etc. ▼ (q is -CH_2-, -C(CH_3)_2-, -C(
CF_3)_2-, -O-, -S- or -SO_2-)
and X_2 and X_4 are ▲There are mathematical formulas, chemical formulas, tables, etc.▼or▲There are mathematical formulas, chemical formulas, tables, etc.▼q- (q is -CH_
2-, -C(CH_3)_2-, -C(CF_3)_2
-, -O-, -S- or -SO_2)-. 2. An encapsulant for semiconductor devices comprising an epoxy resin composition containing the compound according to claim 1. 3. A laminate material comprising an epoxy resin composition containing the compound according to claim 1.