JPH01104535U - - Google Patents
Info
- Publication number
- JPH01104535U JPH01104535U JP20045887U JP20045887U JPH01104535U JP H01104535 U JPH01104535 U JP H01104535U JP 20045887 U JP20045887 U JP 20045887U JP 20045887 U JP20045887 U JP 20045887U JP H01104535 U JPH01104535 U JP H01104535U
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- optical sensor
- semiconductor element
- photovoltaic
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
第１図は本考案の実施例である光センサーの構
造を示す斜視図、第２図は本考案の他の実施例の
構造を示す斜視図、第３図は従来技術になる光セ
ンサーの構造を示す斜視図である。
１１…基板、１２…透明電極、１２ｂ…外部出
力端子、１２ｃ…透明導電膜、１２ｄ，１５…抵
抗体、１３…アモルフアスシリコン膜、１４…背
面電極、１６…トリミング。
Fig. 1 is a perspective view showing the structure of an optical sensor according to an embodiment of the present invention, Fig. 2 is a perspective view showing the structure of another embodiment of the invention, and Fig. 3 is a structure of a conventional optical sensor. FIG. DESCRIPTION OF SYMBOLS 11... Substrate, 12... Transparent electrode, 12b... External output terminal, 12c... Transparent conductive film, 12d, 15... Resistor, 13... Amorphous silicon film, 14... Back electrode, 16... Trimming.
Claims (1)
上記光起電力半導体素子の出力端子間にその出力
を電圧信号に変換する抵抗体を設けて成る光セン
サーにおいて、該抵抗体は、光起電力半導体素子
が形成されたのと同じ基板上の前記出力端子間に
形成された膜状抵抗体からなることを特徴とする
光センサー。 (2) 実用新案登録請求の範囲第１項において、
前記抵抗体は、前記光起電力素子の透明電極層と
一体の透明導電膜により形成されたことを特徴と
する光センサー。[Scope of claims for utility model registration] (1) A photovoltaic semiconductor element is formed on a substrate,
In the optical sensor comprising a resistor for converting the output into a voltage signal between the output terminals of the photovoltaic semiconductor element, the resistor is arranged on the same substrate on which the photovoltaic semiconductor element is formed. An optical sensor comprising a film resistor formed between output terminals. (2) In paragraph 1 of the claims for utility model registration,
The optical sensor is characterized in that the resistor is formed of a transparent conductive film that is integrated with the transparent electrode layer of the photovoltaic element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987200458U JPH0516505Y2 (en) | 1987-12-30 | 1987-12-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987200458U JPH0516505Y2 (en) | 1987-12-30 | 1987-12-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01104535U true JPH01104535U (en) | 1989-07-14 |
| JPH0516505Y2 JPH0516505Y2 (en) | 1993-04-30 |
Family
ID=31490864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987200458U Expired - Lifetime JPH0516505Y2 (en) | 1987-12-30 | 1987-12-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0516505Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58156232U (en) * | 1982-04-13 | 1983-10-19 | 株式会社村田製作所 | Pyroelectric electromagnetic wave detector |
-
1987
- 1987-12-30 JP JP1987200458U patent/JPH0516505Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58156232U (en) * | 1982-04-13 | 1983-10-19 | 株式会社村田製作所 | Pyroelectric electromagnetic wave detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0516505Y2 (en) | 1993-04-30 |