JPH01100284A - Treatment apparatus using corrosive gas - Google Patents
Treatment apparatus using corrosive gasInfo
- Publication number
- JPH01100284A JPH01100284A JP14223687A JP14223687A JPH01100284A JP H01100284 A JPH01100284 A JP H01100284A JP 14223687 A JP14223687 A JP 14223687A JP 14223687 A JP14223687 A JP 14223687A JP H01100284 A JPH01100284 A JP H01100284A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- main chamber
- pin
- corrosive gas
- preliminary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007789 sealing Methods 0.000 claims abstract description 21
- 238000005192 partition Methods 0.000 claims abstract description 12
- 238000004891 communication Methods 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 23
- 239000000356 contaminant Substances 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は腐蝕性ガス使用の処理装置に係り、特にエツチ
ングガスとして例えば塩素系やフッ素系等の腐蝕性ガス
を使用するプラズマエツチング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a processing apparatus using a corrosive gas, and particularly to a plasma etching apparatus using a corrosive gas such as chlorine-based or fluorine-based gas as an etching gas.
［従来の技術］
反応性イオンエツチング装置等のプラズマエツチング装
置は、一般に真空容器即ち真空チャンバ内に一対の上部
及び下部電極を配置し、エツチングガスとして腐蝕性反
応ガスを封入しかつ上記両電極間に高周波電力を印加し
プラズマを発生して被処理物のエツチングを行っている
。この被処理物は下部電極に載置され、この載置は外部
より駆動される昇降装置により行われる。[Prior Art] A plasma etching apparatus such as a reactive ion etching apparatus generally has a pair of upper and lower electrodes disposed in a vacuum container, that is, a vacuum chamber, and a corrosive reactive gas as an etching gas is sealed between the two electrodes. High-frequency power is applied to generate plasma to etch the object. The object to be processed is placed on the lower electrode, and this placement is performed by a lifting device driven from the outside.
第３図及び第４図はこのような昇降装置と真空チャンバ
との関係を示したもので、真空チャンバ１の上部には腐
蝕性ガスを導入するガスノズル２が取付けられ、チャン
バ下部には昇降装置３が設けられている。この昇降装置
３は、ピン部材４とこのピン部材４を駆動するエアシリ
ンダ５とを有し、このピン部材４のピンはチャンバ１の
外壁を貫通してチャンバ内に挿入される。このピン挿入
孔のシールは、０リング６によって行われるか、または
第４図に示した溶接ベロー７によって行われる。搬送袋
＠８によって搬送されたウェハ等の被処理物９は、上昇
位置にあるピン部材先端に引渡され、このピン部材４の
下降によって下部電極に載置される。Figures 3 and 4 show the relationship between such a lifting device and a vacuum chamber.A gas nozzle 2 for introducing corrosive gas is installed at the top of the vacuum chamber 1, and a lifting device is installed at the bottom of the chamber. 3 is provided. This elevating device 3 has a pin member 4 and an air cylinder 5 that drives this pin member 4, and the pin of this pin member 4 penetrates the outer wall of the chamber 1 and is inserted into the chamber. This pin insertion hole is sealed by an O-ring 6 or by a welded bellows 7 shown in FIG. The object 9 to be processed, such as a wafer, transported by the transport bag @8 is delivered to the tip of the pin member in the raised position, and placed on the lower electrode by the lowering of the pin member 4.
［発明が解決しようとする問題点］
ところが、腐蝕性ガスによりチャンバ１の材料成分、例
えばステンレス製チャンバの場合には鉄やニッケルやク
ロム等がチャンバ内に放出され、Ｏリング６または溶接
ベロー７を汚染しそれらを著しく劣化させる。[Problems to be Solved by the Invention] However, corrosive gas releases material components of the chamber 1, such as iron, nickel, chromium, etc. in the case of a stainless steel chamber, and the O-ring 6 or the welded bellows 7. contaminates and seriously deteriorates them.
また、エツチング中に発生するエツチング生成物がＯリ
ング６または溶接ベロー７に付着汚染し、これにより、
Ｏリング６は摩擦係数が増大しピン部材４の移動に支障
をきたし、ベロー７はその付着物１０のために亀裂１１
が生じリークが発生してしまう。このような事態を防ぐ
ためにはＯリングやベロー等のシール部を常に清掃して
汚染物を除去しなければならないが、これらのシール部
は清掃が非常に困難でありメンテナンス性が低く装置の
稼働率を大幅に低下させていた。特に溶接ベローの内部
清掃は実質的に不可能であった。In addition, etching products generated during etching adhere to and contaminate the O-ring 6 or the welding bellows 7, resulting in
The O-ring 6 has an increased coefficient of friction, which hinders the movement of the pin member 4, and the bellows 7 has cracks 11 due to the deposits 10.
This will cause a leak. In order to prevent this kind of situation, seals such as O-rings and bellows must be constantly cleaned to remove contaminants, but these seals are extremely difficult to clean and have poor maintenance, resulting in poor equipment operation. rate was significantly reduced. In particular, it was virtually impossible to clean the inside of the welding bellows.
そこで、本発明の目的は、シール部の汚染を十分に低減
しメンテナンス性を向上させた腐蝕性ガス使用の処理装
置を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a processing apparatus using corrosive gas that sufficiently reduces contamination of the seal portion and improves maintainability.
［問題点を解決するための手段］
この目的を達成するために、本発明は、高真空状態で封
入された腐蝕性ガスの雰囲気で被処理物を処理する主チ
ャンバと；上記主チャンバから隔壁によって仕切られた
予備チャンバと；上記予備チャンバ内に位置するピン本
体と上記隔壁の貫通孔を貫通して上記主チャンバ内に位
置するピン先端部とから構成され、上記ピン先端部にお
いて上記被処理物を保持するピン部材と；外部に配置さ
れ、上記ピン部材を往復動させる外部駆動装置と；上記
予備チャンバの外壁に形成された貫通開口を貫通し、上
記外部駆動装置と上記ピン本体とを連結する連結部材と
；上記貫通孔をシールする第１シール手段と；上記貫通
開口をシールする第２シール手段と；を具備することを
特徴とするものである。[Means for Solving the Problems] In order to achieve this object, the present invention includes: a main chamber for processing a workpiece in an atmosphere of corrosive gas sealed in a high vacuum state; and a partition wall from the main chamber. a preliminary chamber partitioned by; a pin body located within the preliminary chamber; and a pin tip portion penetrating the through hole of the partition wall and positioned within the main chamber; a pin member that holds an object; an external drive device that is disposed outside and reciprocates the pin member; a pin member that passes through a through opening formed in an outer wall of the preliminary chamber and connects the external drive device and the pin body. The present invention is characterized by comprising: a connecting member that connects; a first sealing means that seals the through hole; and a second sealing means that seals the through opening.
［作 用］
外部駆動装置は連結部材を介して予備チャンバ内のピン
本体を駆動し、これによりピン先端部を主チャンバ内で
往復動し被処理物を移動させる。[Function] The external drive device drives the pin body in the preliminary chamber via the connecting member, thereby reciprocating the pin tip within the main chamber and moving the object to be processed.
予備チャンバは、隔壁と第１シール手段とにより主チャ
ンバから隔離されているので１、主チャンバからの汚染
物の侵入が少なく、比較的清浄な状態に保たれる。従っ
て、予備チャンバと外部との間を真空シールする第２シ
ール手段は、上記汚染物による汚染が大幅に低減される
。Since the pre-chamber is isolated from the main chamber by the partition wall and the first sealing means, 1 there is little intrusion of contaminants from the main chamber, and the pre-chamber is kept relatively clean. Therefore, the second seal means for vacuum sealing between the preliminary chamber and the outside is greatly reduced in contamination by the above-mentioned contaminants.
第１シール手段は主チャンバからの汚染物により汚染さ
れるが、しかしながらこの第１シール手段は、主チャン
バから予備チャンバへの汚染物の流入をできるだけ抑え
るものであるので、多少の汚染を受けても問題とならな
い。The first sealing means is contaminated by contaminants from the main chamber; however, since the first sealing means is intended to minimize the flow of contaminants from the main chamber into the preliminary chamber, it may be subject to some contamination. is not a problem either.
［実施例コ
以下本発明による腐蝕性ガス使用の処理装置の一実施例
を第３図及び第４図と同部分に同一符号を付して示した
第１図と第２図を参照して説明する。[Example 1] Hereinafter, an embodiment of a processing apparatus using corrosive gas according to the present invention will be described with reference to FIGS. 1 and 2, in which the same parts as in FIGS. explain.
第１図において、主真空チャンバ１の上部には腐蝕性ガ
スを導入するガスノズル２が取付けられ、チャンバ１の
下部には予備チャンバ１２が付設されている。この予備
チャンバ１２は隔壁１３によって主チャンバ１から隔離
され、この予備チャンバ１２内にはピン部材４のピン本
体４ａが収容されている。このピン部材４のピン先端部
４ｂは隔壁１３の貫通孔１４を貫通し主チャンバ１内に
進入され、このピン先端部４ｂには第２図に示したよう
にその先端にフランジ４Ｃが突設されている。In FIG. 1, a gas nozzle 2 for introducing a corrosive gas is attached to the upper part of a main vacuum chamber 1, and a preliminary chamber 12 is attached to the lower part of the chamber 1. This auxiliary chamber 12 is separated from the main chamber 1 by a partition wall 13, and the pin body 4a of the pin member 4 is accommodated in this auxiliary chamber 12. The pin tip 4b of the pin member 4 passes through the through hole 14 of the partition wall 13 and enters the main chamber 1, and the pin tip 4b has a flange 4C projecting from its tip as shown in FIG. has been done.
隔壁１３の上面には貫通孔１４を取囲むようにＯリング
１５が取付けられている。このＯリング１５に上記フラ
ンジ４Ｃの下面が当接すると、貫通孔１４が主チャンバ
１に対してシールされる、即ち予備チャンバ１２が主チ
ャンバ１からシールされる。An O-ring 15 is attached to the upper surface of the partition wall 13 so as to surround the through hole 14. When the lower surface of the flange 4C comes into contact with this O-ring 15, the through hole 14 is sealed from the main chamber 1, that is, the preliminary chamber 12 is sealed from the main chamber 1.
外部に設けられた外部駆動装置であるエアシリンダ５と
ピン本体４ａとは、連結部材１６によって互いに連結さ
れ、この連結部材１６は予備チャンバ１２の外壁の貫通
開口１７を往復動可能に貫通している。予備チャンバ１
２の下面には溶接ベロー１８が付設され、こ野溶接ベロ
ー１８は貫通開口１７を外部から真空シールしている。The air cylinder 5, which is an external drive device provided outside, and the pin body 4a are connected to each other by a connecting member 16, and this connecting member 16 reciprocably passes through a through opening 17 in the outer wall of the preliminary chamber 12. There is. Preliminary chamber 1
A welding bellows 18 is attached to the lower surface of the opening 2, and the welding bellows 18 vacuum-seals the through opening 17 from the outside.
搬送装置８はウェハ等の被処理物９をピン先端部４ｂに
引渡す。The transfer device 8 transfers a workpiece 9 such as a wafer to the pin tip 4b.
次にこのような構成の腐蝕性ガス使用の処理装置の作用
を説明する。Next, the operation of the processing apparatus using corrosive gas having such a configuration will be explained.
エアシリンダ５がピン部材４をフランジ４ＣがＯリング
１５から充分に離間した連通位置まで上昇させて連通孔
１４によって予備チャンバ１２を主チャンバ１に連通し
た状態において、主チャンバ１が高真空に引かれこれに
より連通孔１４を介して予備チャンバ１２も高真空とな
る。この状態で搬送装置８が被処理物９を搬送しこれを
連通位置のピン先端部４ｂに載置すると、エアシリンダ
５は、ピン部材４を下降させて、下部電極（不図示）上
に載置すると共にピン部材のフランジ４ＣをＯリング１
５に圧接する。この圧接によって予備チャンバ１２と主
チャンバ１との連通を断った後に、腐蝕性反応ガスがガ
スノズル２から主チャンバ１に導入される。この時、予
備チャンバ１２はＯリング１５とフランジ４Ｃとによっ
てシールされているので、予備チャンバ１２への腐蝕性
ガスの進入は実質的になく予備チャンバ１２は清浄な状
態に保たれる。この後に、被処理物９のエツチング処理
が行われ、次いで腐蝕性反応ガスが排気され主チャンバ
１が再び清浄な高真空状態にされると、ピン部材４がエ
アシリンダ５により処理済の被処理物９を上昇させ、搬
送装置８がこの被処理物９を搬送する。When the air cylinder 5 raises the pin member 4 to the communication position where the flange 4C is sufficiently spaced from the O-ring 15 and communicates the preliminary chamber 12 with the main chamber 1 through the communication hole 14, the main chamber 1 is pulled into a high vacuum. As a result, the preliminary chamber 12 is also brought into a high vacuum via the communication hole 14. In this state, when the transport device 8 transports the workpiece 9 and places it on the pin tip 4b at the communicating position, the air cylinder 5 lowers the pin member 4 and places it on the lower electrode (not shown). At the same time, attach the flange 4C of the pin member to the O-ring 1.
5. After the communication between the preparatory chamber 12 and the main chamber 1 is cut off by this pressure contact, the corrosive reaction gas is introduced into the main chamber 1 from the gas nozzle 2 . At this time, since the preliminary chamber 12 is sealed by the O-ring 15 and the flange 4C, corrosive gas does not substantially enter the preliminary chamber 12, and the preliminary chamber 12 is kept in a clean state. After this, the object to be processed 9 is etched, and then the corrosive reaction gas is exhausted and the main chamber 1 is brought into a clean high vacuum state again. The object 9 is raised, and the transport device 8 transports the object 9 to be processed.
このように、予備チャンバ１２は、腐蝕性ガスの導入前
に主チャンバ１に対してシールされるので、腐蝕性ガス
はもちろんエツチング生成物や主チャンバからの放出物
等の汚染物も予備チャンバ１２にほとんど侵入せず、溶
接ベロー１８は、汚染物が付着せず性能の劣化が防止さ
れる。In this manner, the pre-chamber 12 is sealed to the main chamber 1 prior to the introduction of the corrosive gas, so that not only the corrosive gas but also contaminants such as etching products and emissions from the main chamber are kept in the pre-chamber 12. The welding bellows 18 is free from contaminants and its performance is prevented from deteriorating.
０リング１５は上記汚染物の付着を被るが、しかしなが
らこのＯリング１５は、溶接ベロー１８のような真空シ
ールを行うものではなく、高真空状態の両チャンバ１．
１２の間をシールするものであるので、この汚染物の付
着はほとんど問題を生じない。また、この０リング１５
からその付着汚染物を除去することは非常に容易に行う
ことができるので、メンテナンス性が向上する。The O-ring 15 is subject to the above-mentioned contaminants, however, this O-ring 15 does not provide a vacuum seal like the welded bellows 18, and is not used to seal both chambers 1.1 in a high vacuum state.
12, the adhesion of this contaminant hardly causes any problems. Also, this 0 ring 15
Since it is very easy to remove the adhered contaminants from the surface, maintenance efficiency is improved.
なお、上記実施例では貫通開口１７のシールに溶接ベロ
ー１８を使用したが、真空シール手段であれば任意のシ
ールを使用することができる。またＯリング１５も主チ
ャンバ１とに備チャンバ１２との連通及びその遮断を制
御できるものであるなら任意のシールを使用することが
できる。In the above embodiment, the welded bellows 18 was used to seal the through opening 17, but any vacuum sealing means may be used. Further, any seal can be used for the O-ring 15 as long as it can control the communication between the main chamber 1 and the reserve chamber 12 and the interruption thereof.
上記実施例はプラズマエツチング装置の例であったが、
本発明はこれに限られるものではなく、イオンブレーテ
ィング装置等の腐蝕性ガスを使用する化学的または物理
的処理装置にも適用することができる。Although the above embodiment was an example of a plasma etching apparatus,
The present invention is not limited to this, but can also be applied to chemical or physical processing equipment that uses corrosive gas, such as an ion blating equipment.
［発明の効果］
以上の説明から明らかなように、本発明によれば予備チ
ャンバを隔壁を介して主チャンバに付設し、ピン本体を
この予備チャンバ内に収容し予備チャンバを主チャンバ
からシールしたため、主チャンバから予備チャンバへの
腐蝕性ガスやその他の汚染物の侵入が防止でき予備チャ
ンバと外部との間のシール装置の寿命を著しく伸ばすこ
とができる。[Effects of the Invention] As is clear from the above description, according to the present invention, the preliminary chamber is attached to the main chamber through the partition wall, the pin body is housed in the preliminary chamber, and the preliminary chamber is sealed from the main chamber. The intrusion of corrosive gases and other contaminants from the main chamber to the preliminary chamber can be prevented, and the life of the sealing device between the preliminary chamber and the outside can be significantly extended.
第１図は本発明による腐蝕性ガス使用の処理装置の一実
施例を示した断面図、第２図は第１図の一部−を詳細に
示した拡大断面図、第３図と第４図は従来のプラズマエ
ツチング装置の一例を示した断面図である。
１・・・主チャンバ、４・・・ピン部材、４ ａ・・・
ピン本体、４ｂ・・・ピン先端部、５・・・駆動装置（
エアシリンダ）、１２・・・予備チャンバ、１３・・・
隔壁、１４・・・貫通孔、１５・・・第１シール手段、
１６・・・連結部材、１７・・・貫通開口、１８・・・
第２シール手段。
出願人代理人 佐 藤 −雄
第１図
Ｃ
第２図
第３図
千４図
手続辛膚１ｊ−正書（方式）
１．事件の表示
昭和６２年特許願第１．４２２３６号
２、発明の名称
腐蝕性ガス使用の処理装置
３６ 抽圧をする者
事件との関係 特許出願人
株式会社 徳用製作所
４、代 理 人 （郵便番号１００）
昭和６３年１０月５日
（発送口 昭和６３年１０月２５目）FIG. 1 is a sectional view showing an embodiment of a processing apparatus using corrosive gas according to the present invention, FIG. 2 is an enlarged sectional view showing a part of FIG. 1 in detail, and FIGS. The figure is a sectional view showing an example of a conventional plasma etching apparatus. 1... Main chamber, 4... Pin member, 4 a...
Pin body, 4b... Pin tip, 5... Drive device (
air cylinder), 12... spare chamber, 13...
Partition wall, 14... through hole, 15... first sealing means,
16... Connecting member, 17... Through opening, 18...
Second sealing means. Applicant's agent Mr. Sato Figure 1 C Figure 2 Figure 3 Figure 14 Procedures Shinhaka 1j - Ordinary book (method) 1. Indication of the case 1985 Patent Application No. 1.422362, Name of the invention Processing device using corrosive gas 36 Relationship to the case of person who extracts pressure Patent applicant Co., Ltd. Tokuyo Seisakusho 4, Agent (postal code) 100) October 5, 1988 (Shipping port: October 25, 1988)
Claims (1)
理物を処理する主チャンバと；上記主チャンバから隔壁
によって仕切られた予備チャンバと；上記予備チャンバ
内に位置するピン本体と上記隔壁の貫通孔を貫通して上
記主チャンバ内に位置するピン先端部とから構成され、
上記ピン先端部において上記被処理物を保持するピン部
材と；外部に配置され、上記ピン部材を往復動させる外
部駆動装置と；上記予備チャンバの外壁に形成された貫
通開口を貫通し、上記外部駆動装置と上記ピン本体とを
連結する連結部材と；上記貫通孔をシールする第１シー
ル手段と；上記貫通開口をシールする第２シール手段と
；を具備することを特徴とする腐蝕性ガス使用の処理装
置。 ２、上記第２シール手段は溶接ベローであることを特徴
とする特許請求の範囲第１項記載の腐蝕性ガス使用の処
理装置。 ３、上記第１シール手段は上記主チャンバ内の上記隔壁
表面に上記貫通孔を囲むように設けられたＯリングを有
し；上記ピン部材は、上記主チャンバ内に位置する上記
ピン先端部に突設されたフランジを有し；上記外部駆動
装置は、上記ピン部材を、上記フランジが上記Ｏリング
に当接して上記貫通孔をシールするシール位置と上記フ
ランジが上記Ｏリングから離間して上記主チャンバと予
備チャンバとを上記貫通孔を介して連通させる連通位置
との間を往復動させ；上記主チャンバは、上記ピン部材
が上記連通位置にある時に高真空化され、上記シール位
置にある時に上記腐蝕性ガスの封入が行われることを特
徴とする特許請求の範囲第２項記載の腐蝕性ガス使用の
処理装置。[Claims] 1. A main chamber for processing a workpiece in a corrosive gas atmosphere sealed in a high vacuum state; a preliminary chamber partitioned from the main chamber by a partition wall; located within the preliminary chamber; and a pin tip portion located in the main chamber by penetrating the through hole of the partition wall,
a pin member that holds the object to be processed at the tip end of the pin; an external drive device that is disposed outside and reciprocates the pin member; A method using a corrosive gas characterized by comprising: a connecting member that connects the drive device and the pin body; a first sealing means that seals the through hole; and a second sealing means that seals the through opening. processing equipment. 2. The processing apparatus using corrosive gas according to claim 1, wherein the second sealing means is a welded bellows. 3. The first sealing means has an O-ring provided on the surface of the partition wall in the main chamber so as to surround the through hole; a protruding flange; the external driving device moves the pin member between a sealing position where the flange contacts the O-ring and seals the through hole, and a sealing position where the flange is spaced apart from the O-ring and seals the through hole; The main chamber is reciprocated between a communication position where the main chamber and the preliminary chamber are communicated through the through hole; the main chamber is evacuated to a high vacuum when the pin member is in the communication position, and is in the sealing position. 3. The processing apparatus using a corrosive gas according to claim 2, wherein the corrosive gas is sometimes enclosed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62142236A JPH0686669B2 (en) | 1987-06-09 | 1987-06-09 | Processing equipment using corrosive gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62142236A JPH0686669B2 (en) | 1987-06-09 | 1987-06-09 | Processing equipment using corrosive gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01100284A true JPH01100284A (en) | 1989-04-18 |
| JPH0686669B2 JPH0686669B2 (en) | 1994-11-02 |
Family
ID=15310594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62142236A Expired - Lifetime JPH0686669B2 (en) | 1987-06-09 | 1987-06-09 | Processing equipment using corrosive gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0686669B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001262375A (en) * | 2000-03-22 | 2001-09-26 | Shibaura Mechatronics Corp | Dry etching apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61260634A (en) * | 1985-05-15 | 1986-11-18 | Hitachi Ltd | Plasma processor |
-
1987
- 1987-06-09 JP JP62142236A patent/JPH0686669B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61260634A (en) * | 1985-05-15 | 1986-11-18 | Hitachi Ltd | Plasma processor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001262375A (en) * | 2000-03-22 | 2001-09-26 | Shibaura Mechatronics Corp | Dry etching apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0686669B2 (en) | 1994-11-02 |
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