JP7841818B2 - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatusInfo
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- JP7841818B2 JP7841818B2 JP2022091774A JP2022091774A JP7841818B2 JP 7841818 B2 JP7841818 B2 JP 7841818B2 JP 2022091774 A JP2022091774 A JP 2022091774A JP 2022091774 A JP2022091774 A JP 2022091774A JP 7841818 B2 JP7841818 B2 JP 7841818B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
- H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/20—Diffusion for doping of insulating layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/338—Changing chemical properties of treated surfaces
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Description
本開示は、基板処理方法及び基板処理装置に関する。 This disclosure relates to a substrate processing method and a substrate processing apparatus.
半導体基板と、該半導体基板の上に形成されたゲート絶縁膜との界面に、自然界に存在する重水素と水素の比率よりも大きな比率で重水素を含有させる技術が知られている（例えば、特許文献１参照）。 A technique is known for incorporating deuterium at the interface between a semiconductor substrate and a gate insulating film formed on the semiconductor substrate, in a ratio greater than that of deuterium to hydrogen found in nature (see, for example, Patent Document 1).
本開示は、絶縁膜中への重水素の導入量を制御できる技術を提供する。 This disclosure provides a technology that can control the amount of deuterium introduced into an insulating film.
本開示の一態様による基板処理方法は、処理容器内に絶縁膜を表面に有する基板を収容する工程と、前記処理容器内に収容された前記基板を第１温度に維持した状態で重水素ガスを含むガスから生成したプラズマに前記絶縁膜を晒し、前記絶縁膜に重水素を導入する工程と、前記処理容器内に収容された前記基板を前記第１温度と異なる第２温度に制御した状態で前記絶縁膜を前記プラズマに晒すことなく熱処理し、前記絶縁膜に導入された前記重水素の濃度を調整する工程と、を有する。 A substrate processing method according to one aspect of this disclosure comprises the steps of: housing a substrate having an insulating film on its surface in a processing container; exposing the insulating film to a plasma generated from a gas containing deuterium gas while maintaining the substrate housed in the processing container at a first temperature, thereby introducing deuterium into the insulating film; and heat-treating the substrate housed in the processing container at a second temperature different from the first temperature, without exposing the insulating film to the plasma, thereby adjusting the concentration of deuterium introduced into the insulating film.
本開示によれば、絶縁膜中への重水素の導入量を制御できる。 According to this disclosure, the amount of deuterium introduced into the insulating film can be controlled.
以下、添付の図面を参照しながら、本開示の限定的でない例示の実施形態について説明する。添付の全図面中、同一又は対応する部材又は部品については、同一又は対応する参照符号を付し、重複する説明を省略する。 The following describes exemplary embodiments of this disclosure, not limited to those described herein, with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.
〔基板処理方法〕
図１及び図２を参照し、実施形態に係る基板処理方法について説明する。図１は、実施形態に係る基板処理方法を示すフローチャートである。図２は、実施形態に係る基板処理方法を示すタイミングチャートである。図２は、実施形態に係る基板処理方法の各工程における基板の温度を示す。
[Substrate processing method]
The substrate processing method according to the embodiment will be described with reference to Figures 1 and 2. Figure 1 is a flowchart of the substrate processing method according to the embodiment. Figure 2 is a timing chart showing the substrate processing method according to the embodiment. Figure 2 shows the temperature of the substrate at each step of the substrate processing method according to the embodiment.
図１に示されるように、実施形態に係る基板処理方法は、準備工程Ｓ１０と、温度安定化工程Ｓ２０と、重水素プラズマ工程Ｓ３０と、濃度調整工程Ｓ４０とを有する。 As shown in Figure 1, the substrate processing method according to the embodiment includes a preparation step S10, a temperature stabilization step S20, a deuterium plasma step S30, and a concentration adjustment step S40.
準備工程Ｓ１０は、絶縁膜を表面に有する基板を準備することを含む。基板は、例えば半導体ウエハであってよい。絶縁膜は、例えばシリコン窒化膜、シリコン酸窒化膜であってよい。 Preparation step S10 includes preparing a substrate having an insulating film on its surface. The substrate may be, for example, a semiconductor wafer. The insulating film may be, for example, a silicon nitride film or a silicon oxynitride film.
温度安定化工程Ｓ２０は、準備工程Ｓ１０の後に行われる。温度安定化工程Ｓ２０は、基板の温度を第１温度に調整して安定化させることを含む。第１温度は、例えば６００℃以上７００℃以下であってよい。図２の（ａ）～（ｃ）の例では、第１温度は６３０℃である。 The temperature stabilization step S20 is performed after the preparation step S10. The temperature stabilization step S20 includes adjusting and stabilizing the substrate temperature to a first temperature. The first temperature may be, for example, 600°C or higher and 700°C or lower. In the examples of Figures 2(a) to (c), the first temperature is 630°C.
重水素プラズマ工程Ｓ３０は、温度安定化工程Ｓ２０の後に行われる。重水素プラズマ工程Ｓ３０は、基板の温度を第１温度に維持した状態で、重水素ガスを含むプラズマ生成ガスから生成したプラズマに絶縁膜を晒し、絶縁膜に重水素を導入する。プラズマ生成ガスは、不活性ガスを更に含んでもよい。不活性ガスは、例えば窒素ガス、アルゴンガスであってよい。 The deuterium plasma process S30 is performed after the temperature stabilization process S20. In the deuterium plasma process S30, while maintaining the substrate temperature at a first temperature, the insulating film is exposed to plasma generated from a plasma generation gas containing deuterium gas, thereby introducing deuterium into the insulating film. The plasma generation gas may further contain an inert gas. The inert gas may be, for example, nitrogen gas or argon gas.
濃度調整工程Ｓ４０は、重水素プラズマ工程Ｓ３０の後に行われる。濃度調整工程Ｓ４０は、基板の温度を第１温度と異なる第２温度に制御した状態で、絶縁膜をプラズマに晒すことなく熱処理し、絶縁膜に導入された重水素の濃度を調整することを含む。絶縁膜は、プラズマに晒されることなく熱処理される場合、温度が高いほど絶縁膜から重水素が脱離しやすくなると考えられる。このため、基板の温度を第１温度と異なる第２温度に制御した状態で、絶縁膜をプラズマに晒すことなく熱処理することで、絶縁膜中の重水素濃度を調整できる。 The concentration adjustment step S40 is performed after the deuterium plasma step S30. The concentration adjustment step S40 includes adjusting the concentration of deuterium introduced into the insulating film by heat-treating the insulating film without exposing it to plasma, while controlling the substrate temperature to a second temperature different from the first temperature. It is believed that when the insulating film is heat-treated without exposure to plasma, deuterium is more easily detached from the insulating film at higher temperatures. Therefore, by heat-treating the insulating film without exposure to plasma while controlling the substrate temperature to a second temperature different from the first temperature, the deuterium concentration in the insulating film can be adjusted.
第２温度は、例えば第１温度よりも高い温度であってよい。この場合、絶縁膜が第１温度よりも高い温度で熱処理されるため、絶縁膜が第１温度で熱処理される場合と比較して、絶縁膜中から重水素が脱離しやすい。このため、絶縁膜中の重水素濃度が低下する。第２温度は、例えば第１温度よりも低い温度であってよい。この場合、絶縁膜が第１温度よりも低い温度で熱処理されるため、絶縁膜が第１温度で熱処理される場合と比較して、絶縁膜中から重水素が脱離しにくい。このため、絶縁膜中の重水素濃度が上昇する。第２温度は、例えば一定の温度であってよく、時間と共に変化する温度であってもよい。図２の（ａ）では、第２温度は７００℃である。図２の（ｃ）では、第２温度は６３０℃から時間と共に５７０℃まで連続的に変化する温度である。図２の（ｂ）には、比較のために第２温度が第１温度と同じ温度である場合を示す。 The second temperature may be, for example, higher than the first temperature. In this case, since the insulating film is heat-treated at a higher temperature than the first temperature, deuterium is more easily desorbed from the insulating film compared to when the insulating film is heat-treated at the first temperature. Therefore, the deuterium concentration in the insulating film decreases. The second temperature may be, for example, lower than the first temperature. In this case, since the insulating film is heat-treated at a lower temperature than the first temperature, deuterium is less easily desorbed from the insulating film compared to when the insulating film is heat-treated at the first temperature. Therefore, the deuterium concentration in the insulating film increases. The second temperature may be, for example, a constant temperature, or a temperature that changes over time. In Figure 2(a), the second temperature is 700°C. In Figure 2(c), the second temperature is a temperature that continuously changes from 630°C to 570°C over time. Figure 2(b) shows the case where the second temperature is the same as the first temperature for comparison.
第２温度は、例えば所望の重水素濃度に基づいて定められてよい。第２温度は、例えば所望の重水素濃度と、重水素濃度と第２温度との関係を示す関係情報とに基づいて定められてよい。該関係情報は、例えば予め実験を行うことにより算出される。 The second temperature may be determined, for example, based on a desired deuterium concentration. The second temperature may also be determined based on, for example, a desired deuterium concentration and relationship information showing the relationship between the deuterium concentration and the second temperature. This relationship information can be calculated, for example, by conducting experiments beforehand.
濃度調整工程Ｓ４０は、例えば基板に重水素ガスを供給することを含んでもよい。濃度調整工程Ｓ４０は、例えば基板に重水素ガスを供給することなく行われてもよい。濃度調整工程Ｓ４０は、例えば基板に不活性ガスを供給することを含んでもよい。 The concentration adjustment step S40 may include, for example, supplying deuterium gas to the substrate. The concentration adjustment step S40 may also be performed without supplying deuterium gas to the substrate. The concentration adjustment step S40 may also include, for example, supplying an inert gas to the substrate.
以上に説明したように、実施形態に係る基板処理方法によれば、重水素プラズマ工程Ｓ３０の後に濃度調整工程Ｓ４０を実施する。重水素プラズマ工程Ｓ３０では、基板の温度を第１温度に維持した状態で、重水素ガスを含むプラズマ生成ガスから生成したプラズマに絶縁膜を晒し、絶縁膜に重水素を導入する。濃度調整工程Ｓ４０では、基板の温度を第１温度と異なる第２温度に制御した状態で、絶縁膜をプラズマに晒すことなく熱処理し、絶縁膜に導入された重水素の濃度を調整する。このように、実施形態に係る基板処理方法によれば、重水素プラズマ工程Ｓ３０の条件を変更することなく、濃度調整工程Ｓ４０における基板の温度を変更することで、絶縁膜中への重水素の導入量を制御できる。 As described above, according to the substrate processing method of the embodiment, a concentration adjustment step S40 is performed after the deuterium plasma step S30. In the deuterium plasma step S30, while maintaining the substrate temperature at a first temperature, the insulating film is exposed to plasma generated from a plasma generation gas containing deuterium gas, thereby introducing deuterium into the insulating film. In the concentration adjustment step S40, while controlling the substrate temperature to a second temperature different from the first temperature, the insulating film is heat-treated without exposure to plasma, thereby adjusting the concentration of deuterium introduced into the insulating film. In this way, according to the substrate processing method of the embodiment, the amount of deuterium introduced into the insulating film can be controlled by changing the substrate temperature in the concentration adjustment step S40 without changing the conditions of the deuterium plasma step S30.
ところで、絶縁膜中への重水素の導入量を増やしたい場合、重水素プラズマ工程Ｓ３０において基板の温度を高めたり、ＲＦ電力を高めたり、絶縁膜を重水素プラズマに晒す時間を長くしたりする等、重水素プラズマ工程Ｓ３０の条件を変更する方法が考えられる。しかし、安全性の観点から、重水素プラズマ工程Ｓ３０の条件を変更できない場合がある。これに対し、実施形態に係る基板処理方法では、重水素プラズマ工程Ｓ３０の条件を変更することなく、絶縁膜中への重水素の導入量を制御できるので、重水素プラズマ工程Ｓ３０の条件を変更できない場合に特に有効である。 Incidentally, if it is desired to increase the amount of deuterium introduced into the insulating film, one possible method is to change the conditions of the deuterium plasma process S30, such as increasing the substrate temperature, increasing the RF power, or extending the exposure time of the insulating film to the deuterium plasma. However, from a safety standpoint, there are cases where the conditions of the deuterium plasma process S30 cannot be changed. In contrast, the substrate processing method according to this embodiment allows for the control of the amount of deuterium introduced into the insulating film without changing the conditions of the deuterium plasma process S30, making it particularly effective when the conditions of the deuterium plasma process S30 cannot be changed.
〔基板処理装置〕
図３及び図４を参照し、実施形態に係る基板処理装置１００について説明する。図３及び図４に示されるように、基板処理装置１００は、主として、処理容器１と、ガス供給部２０と、プラズマ生成部３０と、排気部４０と、加熱部５０と、制御部６０とを備える。
[Substrate Processing Equipment]
Referring to Figures 3 and 4, the substrate processing apparatus 100 according to the embodiment will be described. As shown in Figures 3 and 4, the substrate processing apparatus 100 mainly comprises a processing container 1, a gas supply unit 20, a plasma generation unit 30, an exhaust unit 40, a heating unit 50, and a control unit 60.
処理容器１は、下端が開口された有天井の縦型の筒体状を有する。処理容器１の全体は、例えば石英により形成される。処理容器１内の上端近傍には天井板２が設けられ、天井板２の下側の領域が封止される。天井板２は、例えば石英により形成される。処理容器１の下端の開口には、筒体状に成形された金属製のマニホールド３がシール部材４を介して連結される。シール部材４は、例えばＯリングであってよい。 The processing container 1 has a vertical, cylindrical shape with a cap and an open lower end. The entire processing container 1 is made of, for example, quartz. A cap plate 2 is provided near the upper end of the processing container 1, and the area below the cap plate 2 is sealed. The cap plate 2 is also made of, for example, quartz. A cylindrical metal manifold 3 is connected to the opening at the lower end of the processing container 1 via a sealing member 4. The sealing member 4 may be, for example, an O-ring.
マニホールド３は、処理容器１の下端を支持する。マニホールド３の下方からボート５が処理容器１内に挿入される。ボート５は、複数枚（例えば２５枚～１５０枚）の基板Ｗを上下方向に沿って間隔を有して略水平に保持する。基板Ｗは、例えば半導体ウエハであってよい。ボート５は、例えば石英により形成される。ボート５は、例えば３本の支柱６を有し、支柱６に形成された溝により複数枚の基板Ｗが支持される。 The manifold 3 supports the lower end of the processing container 1. A boat 5 is inserted into the processing container 1 from below the manifold 3. The boat 5 holds multiple substrates W (e.g., 25 to 150) in a substantially horizontal position with spacing along the vertical direction. The substrates W may be, for example, semiconductor wafers. The boat 5 is formed of, for example, quartz. The boat 5 has, for example, three support columns 6, and the multiple substrates W are supported by grooves formed in the support columns 6.
ボート５は、保温筒７を介して回転台８の上に載置される。保温筒７は、例えば石英により形成される。保温筒７は、マニホールド３の下端の開口からの放熱を抑制する。回転台８は、回転軸１０の上に支持される。マニホールド３の下端の開口は、蓋体９によって開閉される。蓋体９は、例えばステンレス鋼等の金属材料により形成される。回転軸１０は、蓋体９を貫通する。 The boat 5 is placed on the turntable 8 via an insulating tube 7. The insulating tube 7 is made of, for example, quartz. The insulating tube 7 suppresses heat dissipation from the opening at the lower end of the manifold 3. The turntable 8 is supported on the rotating shaft 10. The opening at the lower end of the manifold 3 is opened and closed by a cover 9. The cover 9 is made of, for example, a metal material such as stainless steel. The rotating shaft 10 passes through the cover 9.
回転軸１０の貫通部には、磁性流体シール１１が設けられる。磁性流体シール１１は、回転軸１０を気密に封止し、かつ回転可能に支持する。蓋体９の周辺部とマニホールド３の下端との間には、処理容器１内の気密性を保持するためのシール部材１２が設けられる。シール部材１２は、例えばＯリングであってよい。 A magnetic fluid seal 11 is provided at the penetration point of the rotating shaft 10. The magnetic fluid seal 11 hermetically seals the rotating shaft 10 and supports it rotatably. A sealing member 12 is provided between the periphery of the lid 9 and the lower end of the manifold 3 to maintain airtightness within the processing container 1. The sealing member 12 may be, for example, an O-ring.
回転軸１０は、例えばボートエレベータ等の昇降機構に支持されたアーム１３の先端に取り付けられる。アーム１３が昇降することにより、ボート５、保温筒７、回転台８及び蓋体９が回転軸と一体で昇降し、処理容器１内に対して挿脱される。 The rotating shaft 10 is attached to the tip of an arm 13 supported by a lifting mechanism, such as a boat elevator. As the arm 13 moves up and down, the boat 5, insulation cylinder 7, turntable 8, and lid 9 move up and down together with the rotating shaft, and are inserted into and removed from the processing container 1.
ガス供給部２０は、処理容器１内へ各種のガスを供給する。ガス供給部２０は、例えば４本のガスノズル２１～２４を有する。ガス供給部２０は、例えば４本のガスノズル２１～２４に加えて更に別のガスノズルを有してもよい。 The gas supply unit 20 supplies various gases into the processing container 1. The gas supply unit 20 has, for example, four gas nozzles 21-24. The gas supply unit 20 may also have, for example, additional gas nozzles in addition to the four gas nozzles 21-24.
ガスノズル２１は、例えば石英により形成され、マニホールド３の側壁を内側へ貫通して上方へ屈曲されて垂直に伸びるＬ字形状を有する。ガスノズル２１は、その垂直部分がプラズマ生成空間Ｐの外部、例えば処理容器１内における該処理容器１の中心Ｃよりもプラズマ生成空間Ｐの側に設けられる。ガスノズル２１は、例えばその垂直部分が処理容器１内における該処理容器１の中心Ｃよりも排気口４１の側に設けられてもよい。ガスノズル２１は、１又は２以上の処理ガスの供給源と接続される。ガスノズル２１の垂直部分には、ボート５の基板支持範囲に対応する上下方向の長さに亘って複数のガス孔２１ａが間隔を空けて形成される。ガス孔２１ａは、例えば処理容器１の中心Ｃに配向し、処理容器１の中心Ｃに向かって水平方向に処理ガスを吐出する。ガス孔２１ａは、例えばプラズマ生成空間Ｐ側に配向してもよく、処理容器１の近傍の内壁側に配向してもよい。 The gas nozzle 21 is formed, for example, from quartz and has an L-shape that penetrates the side wall of the manifold 3 inward, is bent upward, and extends vertically. The vertical portion of the gas nozzle 21 is located outside the plasma generation space P, for example, on the side of the plasma generation space P that is closer to the center C of the processing vessel 1 within the processing vessel 1. The vertical portion of the gas nozzle 21 may also be located on the side of the exhaust port 41 that is closer to the center C of the processing vessel 1 within the processing vessel 1. The gas nozzle 21 is connected to one or more processing gas supply sources. Multiple gas holes 21a are formed at intervals in the vertical portion of the gas nozzle 21 over a length corresponding to the substrate support range of the boat 5. The gas holes 21a are oriented, for example, toward the center C of the processing vessel 1 and discharge the processing gas horizontally toward the center C of the processing vessel 1. The gas holes 21a may be oriented toward the plasma generation space P side, or toward the inner wall side near the processing vessel 1.
ガスノズル２２は、例えば石英により形成され、マニホールド３の側壁を内側へ貫通して上方へ屈曲されて垂直に伸びるＬ字形状を有する。ガスノズル２２は、その垂直部分がプラズマ生成空間Ｐの外部、例えば処理容器１内における該処理容器１の中心Ｃよりもプラズマ生成空間Ｐの側に設けられる。ガスノズル２２は、例えばその垂直部分が処理容器１内における該処理容器１の中心Ｃよりも排気口４１の側に設けられてもよい。ガスノズル２２は、１又は２以上の処理ガスの供給源と接続される。ガスノズル２２の垂直部分には、ボート５の基板支持範囲に対応する上下方向の長さ方向に亘って複数のガス孔２２ａが間隔を空けて形成される。ガス孔２２ａは、例えば処理容器１の中心Ｃに配向し、処理容器１の中心Ｃに向かって水平方向に処理ガスを吐出する。ガス孔２２ａは、例えばプラズマ生成空間Ｐ側に配向してもよく、処理容器１の近傍の内壁側に配向してもよい。 The gas nozzle 22 is formed, for example, from quartz and has an L-shape that penetrates the side wall of the manifold 3 inward, is bent upward, and extends vertically. The vertical portion of the gas nozzle 22 is located outside the plasma generation space P, for example, on the side of the plasma generation space P that is closer to the center C of the processing vessel 1 within the processing vessel 1. The vertical portion of the gas nozzle 22 may also be located on the side of the exhaust port 41 that is closer to the center C of the processing vessel 1 within the processing vessel 1. The gas nozzle 22 is connected to one or more processing gas supply sources. Multiple gas holes 22a are formed at intervals along the vertical length corresponding to the substrate support range of the boat 5. The gas holes 22a are oriented, for example, toward the center C of the processing vessel 1 and discharge the processing gas horizontally toward the center C of the processing vessel 1. The gas holes 22a may be oriented toward the plasma generation space P side, or toward the inner wall side near the processing vessel 1.
ガスノズル２３は、例えば石英により形成され、マニホールド３の側壁を内側へ貫通して上方へ屈曲されて垂直に伸びるＬ字形状を有する。ガスノズル２３は、その垂直部分がプラズマ生成空間Ｐに設けられる。ガスノズル２３は、１又は２以上の処理ガスの供給源と接続される。該処理ガスの供給源は、例えば重水素ガスの供給源を含んでよい。ガスノズル２３の垂直部分には、ボート５の基板支持範囲に対応する上下方向の長さ方向に亘って複数のガス孔２３ａが間隔を空けて形成される。ガス孔２３ａは、例えば処理容器１の中心Ｃに配向し、処理容器１の中心Ｃに向かって水平方向に処理ガスを吐出する。 The gas nozzle 23 is made of, for example, quartz and has an L-shape that penetrates the side wall of the manifold 3 inward, is bent upward, and extends vertically. The vertical portion of the gas nozzle 23 is provided in the plasma generation space P. The gas nozzle 23 is connected to one or more processing gas supply sources. These processing gas supply sources may include, for example, a deuterium gas supply source. Multiple gas holes 23a are formed at intervals along the vertical length of the gas nozzle 23, corresponding to the substrate support area of the boat 5. The gas holes 23a are oriented, for example, toward the center C of the processing container 1, and discharge the processing gas horizontally toward the center C of the processing container 1.
ガスノズル２４は、例えば石英により形成され、マニホールド３の側壁を貫通して水平に伸びる直管形状を有する。ガスノズル２４は、その先端部分がプラズマ生成空間Ｐの外部、例えば処理容器１内に設けられる。ガスノズル２４は、パージガスの供給源と接続される。ガスノズル２４は、先端部分が開口しており、開口から処理容器１内にパージガスを供給する。パージガスとしては、例えばアルゴンガス、窒素ガス等の不活性ガスが挙げられる。 The gas nozzle 24 is made of, for example, quartz and has a straight pipe shape that extends horizontally through the side wall of the manifold 3. The tip of the gas nozzle 24 is located outside the plasma generation space P, for example, inside the processing container 1. The gas nozzle 24 is connected to a purge gas supply source. The tip of the gas nozzle 24 is open, and the purge gas is supplied into the processing container 1 from this opening. Examples of purge gases include inert gases such as argon and nitrogen.
プラズマ生成部３０は、処理容器１の側壁の一部に設けられる。プラズマ生成部３０は、ガスノズル２３から供給される処理ガスからプラズマを生成する。プラズマ生成部３０は、プラズマ区画壁３２と、一対のプラズマ電極３３と、給電ライン３４と、ＲＦ電源３５と、絶縁保護カバー３６とを有する。 The plasma generation unit 30 is provided in a part of the side wall of the processing vessel 1. The plasma generation unit 30 generates plasma from the processing gas supplied from the gas nozzle 23. The plasma generation unit 30 includes a plasma compartment wall 32, a pair of plasma electrodes 33, a power supply line 34, an RF power supply 35, and an insulating protective cover 36.
プラズマ区画壁３２は、処理容器１の外壁に気密に溶接される。プラズマ区画壁３２は、例えば石英により形成される。プラズマ区画壁３２は断面凹状をなし、処理容器１の側壁に形成された開口３１を覆う。開口３１は、ボート５に支持される全ての基板Ｗを上下方向にカバーできるように、上下方向に細長く形成される。プラズマ区画壁３２により規定されると共に処理容器１内と連通する内側空間であるプラズマ生成空間Ｐにはガスノズル２３が配置される。ガスノズル２１及びガスノズル２２は、プラズマ生成空間Ｐの外部の処理容器１の内側壁に沿った基板Ｗに近い位置に設けられる。 The plasma compartment wall 32 is hermetically welded to the outer wall of the processing vessel 1. The plasma compartment wall 32 is formed, for example, from quartz. The plasma compartment wall 32 has a concave cross-section and covers the opening 31 formed in the side wall of the processing vessel 1. The opening 31 is elongated in the vertical direction so as to cover all the substrates W supported by the boat 5 in the vertical direction. Gas nozzles 23 are positioned in the plasma generation space P, which is an inner space defined by the plasma compartment wall 32 and communicating with the inside of the processing vessel 1. Gas nozzles 21 and 22 are located near the substrates W along the inner wall of the processing vessel 1, outside the plasma generation space P.
一対のプラズマ電極３３は、それぞれ細長い形状を有し、プラズマ区画壁３２の両側の壁の外面に、上下方向に沿って対向して配置される。各プラズマ電極３３の下端には、給電ライン３４が接続される。 Each of the pair of plasma electrodes 33 has an elongated shape and is positioned opposite to the outer surfaces of the walls on both sides of the plasma compartment wall 32, along the vertical direction. A power supply line 34 is connected to the lower end of each plasma electrode 33.
給電ライン３４は、各プラズマ電極３３とＲＦ電源３５とを電気的に接続する。給電ライン３４は、例えば一端が各プラズマ電極３３の短辺の側部である下端に接続され、他端がＲＦ電源３５と接続される。 The power supply line 34 electrically connects each plasma electrode 33 to the RF power supply 35. For example, one end of the power supply line 34 is connected to the lower end, which is the side of the short edge of each plasma electrode 33, and the other end is connected to the RF power supply 35.
ＲＦ電源３５は、各プラズマ電極３３の下端に給電ライン３４を介して電気的に接続される。ＲＦ電源３５は、一対のプラズマ電極３３に例えば１３．５６ＭＨｚのＲＦ電力を供給する。これにより、プラズマ区画壁３２により規定されたプラズマ生成空間Ｐに、ＲＦ電力が印加される。 The RF power supply 35 is electrically connected to the lower end of each plasma electrode 33 via a power supply line 34. The RF power supply 35 supplies RF power, for example, 13.56 MHz, to the pair of plasma electrodes 33. This applies RF power to the plasma generation space P defined by the plasma partition wall 32.
絶縁保護カバー３６は、プラズマ区画壁３２の外側に、該プラズマ区画壁３２を覆うようにして取り付けられる。絶縁保護カバー３６の内側部分には、冷媒通路（図示せず）が設けられる。冷媒通路に冷却された窒素ガス等の冷媒を流すことにより、プラズマ電極３３が冷却される。プラズマ電極３３と絶縁保護カバー３６との間に、プラズマ電極３３を覆うようにシールド（図示せず）が設けられてもよい。シールドは、例えば金属等の良導体により形成され、電気的に接地される。 The insulating protective cover 36 is attached to the outside of the plasma compartment wall 32, covering the plasma compartment wall 32. A refrigerant passage (not shown) is provided in the inner portion of the insulating protective cover 36. The plasma electrode 33 is cooled by flowing a refrigerant, such as cooled nitrogen gas, through the refrigerant passage. A shield (not shown) may be provided between the plasma electrode 33 and the insulating protective cover 36, covering the plasma electrode 33. The shield is formed from a good conductor, such as metal, and is electrically grounded.
排気部４０は、開口３１に対向する処理容器１の側壁部分に形成された排気口４１に設けられる。排気口４１は、ボート５に対応して上下に細長く形成される。処理容器１の排気口４１に対応する部分には、排気口４１を覆うように断面Ｕ字状に成形されたカバー部材４２が取り付けられる。カバー部材４２は、処理容器１の側壁に沿って上方に延びる。カバー部材４２の下部には、排気配管４３が接続される。排気配管４３には、ガスの流通方向の上流側から下流側に向かって順に、圧力調整弁４４及び真空ポンプ４５が設けられる。排気部４０は、制御部６０の制御に基づき圧力調整弁４４及び真空ポンプ４５を動作して、真空ポンプ４５に処理容器１内のガスを吸引しながら、圧力調整弁４４により処理容器１内の圧力を調整する。 The exhaust unit 40 is provided in an exhaust port 41 formed in the side wall portion of the processing container 1 facing the opening 31. The exhaust port 41 is elongated vertically, corresponding to the boat 5. A cover member 42, shaped in a U-shape cross-section, is attached to the portion of the processing container 1 corresponding to the exhaust port 41. The cover member 42 extends upward along the side wall of the processing container 1. An exhaust pipe 43 is connected to the lower part of the cover member 42. A pressure regulating valve 44 and a vacuum pump 45 are provided in the exhaust pipe 43, in order from the upstream side to the downstream side in the gas flow direction. Based on the control of the control unit 60, the exhaust unit 40 operates the pressure regulating valve 44 and the vacuum pump 45, adjusting the pressure inside the processing container 1 by using the pressure regulating valve 44 while simultaneously drawing gas from the processing container 1 into the vacuum pump 45.
加熱部５０は、ヒータ５１を含む。ヒータ５１は、処理容器１の径方向外側において処理容器１を囲む円筒形状を有する。ヒータ５１は、処理容器１の側周囲全体を加熱することで、処理容器１内に収容された各基板Ｗを加熱する。 The heating section 50 includes a heater 51. The heater 51 has a cylindrical shape that surrounds the processing container 1 on its radially outer side. The heater 51 heats each substrate W contained within the processing container 1 by heating the entire side circumference of the processing container 1.
制御部６０は、例えば基板処理装置１００の各部の動作を制御する。制御部６０は、例えばコンピュータであってよい。また、基板処理装置１００の各部の動作を行うコンピュータのプログラムは、記憶媒体に記憶されている。記憶媒体は、例えばフレキシブルディスク、コンパクトディスク、ハードディスク、フラッシュメモリ、ＤＶＤ等であってよい。 The control unit 60 controls the operation of each part of the substrate processing apparatus 100. The control unit 60 may be, for example, a computer. The computer program that controls the operation of each part of the substrate processing apparatus 100 is stored in a storage medium. The storage medium may be, for example, a flexible disk, compact disk, hard disk, flash memory, DVD, etc.
〔基板処理装置の動作〕
基板処理装置１００において実施形態に係る基板処理方法を実施する場合の動作について説明する。
[Operation of the circuit board processing unit]
The operation when the substrate processing method according to the embodiment is carried out in the substrate processing apparatus 100 will be described below.
まず、制御部６０は、昇降機構を制御して、複数枚の基板Ｗを保持したボート５を処理容器１内に搬入し、蓋体９により処理容器１の下端の開口を気密に塞ぎ、密閉する。各基板Ｗは、絶縁膜を表面に有する基板である。 First, the control unit 60 controls the lifting mechanism to move the boat 5, which holds multiple substrates W, into the processing container 1. The lid 9 then airtightly closes the opening at the lower end of the processing container 1, sealing it. Each substrate W has an insulating film on its surface.
続いて、制御部６０は、温度安定化工程Ｓ２０を実行するように、排気部４０及び加熱部５０を制御する。具体的には、まず、制御部６０は、排気部４０を制御して処理容器１内を所定の圧力に減圧し、加熱部５０を制御して基板Ｗの温度を第１温度に調整して安定化させる。 Next, the control unit 60 controls the exhaust unit 40 and the heating unit 50 to execute the temperature stabilization process S20. Specifically, first, the control unit 60 controls the exhaust unit 40 to reduce the pressure inside the processing container 1 to a predetermined level, and then controls the heating unit 50 to adjust and stabilize the temperature of the substrate W to a first temperature.
続いて、制御部６０は、重水素プラズマ工程Ｓ３０を実行するように、ガス供給部２０、プラズマ生成部３０、排気部４０及び加熱部５０を制御する。具体的には、まず、制御部６０は、加熱部を制御して基板Ｗの温度を第１温度に維持した状態で、ガス供給部２０を制御して処理容器１内に重水素ガスを供給し、プラズマ生成部３０を制御してＲＦ電源３５から一対のプラズマ電極３３にＲＦ電力を供給する。これにより、処理容器１内に供給された重水素ガスからプラズマが生成される。その結果、重水素ガスから生成されたプラズマに絶縁膜が晒され、絶縁膜に重水素が導入される。 Next, the control unit 60 controls the gas supply unit 20, plasma generation unit 30, exhaust unit 40, and heating unit 50 to execute the deuterium plasma process S30. Specifically, first, the control unit 60 controls the heating unit to maintain the temperature of the substrate W at a first temperature, then controls the gas supply unit 20 to supply deuterium gas into the processing container 1, and controls the plasma generation unit 30 to supply RF power from the RF power supply 35 to the pair of plasma electrodes 33. As a result, plasma is generated from the deuterium gas supplied into the processing container 1. Consequently, the insulating film is exposed to the plasma generated from the deuterium gas, and deuterium is introduced into the insulating film.
続いて、制御部６０は、濃度調整工程Ｓ４０を実行するように、ガス供給部２０、プラズマ生成部３０、排気部４０及び加熱部５０を制御する。具体的には、まず、制御部６０は、プラズマ生成部３０を制御してＲＦ電源３５から一対のプラズマ電極３３へのＲＦ電力の供給を停止する。次いで、制御部６０は、ガス供給部２０を制御して処理容器１内への重水素ガスの供給を停止する。また、制御部６０は、加熱部５０を制御して基板Ｗの温度を第２温度に制御する。これにより、絶縁膜はプラズマに晒されることなく熱処理され、絶縁膜に導入された重水素の濃度が調整される。 Next, the control unit 60 controls the gas supply unit 20, plasma generation unit 30, exhaust unit 40, and heating unit 50 to execute the concentration adjustment process S40. Specifically, first, the control unit 60 controls the plasma generation unit 30 to stop the supply of RF power from the RF power supply 35 to the pair of plasma electrodes 33. Then, the control unit 60 controls the gas supply unit 20 to stop the supply of deuterium gas into the processing container 1. Furthermore, the control unit 60 controls the heating unit 50 to control the temperature of the substrate W to a second temperature. As a result, the insulating film is heat-treated without being exposed to plasma, and the concentration of deuterium introduced into the insulating film is adjusted.
続いて、制御部６０は、処理容器１内を大気圧に昇圧し、処理容器１内を搬出温度に降温させた後、昇降機構を制御してボート５を処理容器１内から搬出する。 Next, the control unit 60 increases the pressure inside the processing container 1 to atmospheric pressure, then lowers the temperature inside the processing container 1 to the discharge temperature, and finally controls the lifting mechanism to discharge the boat 5 from inside the processing container 1.
〔実施例〕
実施形態に係る基板処理方法により絶縁膜への重水素の導入量を制御できることを確認した実施例について説明する。
[Examples]
This section describes an example in which it was confirmed that the amount of deuterium introduced into the insulating film can be controlled by the substrate processing method according to the embodiment.
実施例では、シリコン窒化膜を表面に有する基板を準備し、準備した基板を前述の基板処理装置１００内に収容し、以下に示される条件１～３によりシリコン窒化膜に重水素を導入した。次いで、二次イオン質量分析法（Secondary Ion Mass Spectrometry：ＳＩＭＳ)により、シリコン窒化膜中の重水素濃度を測定した。シリコン窒化膜は、絶縁膜の一例である。 In this example, a substrate having a silicon nitride film on its surface was prepared. The prepared substrate was placed in the aforementioned substrate processing apparatus 100, and deuterium was introduced into the silicon nitride film under conditions 1 to 3 shown below. Subsequently, the deuterium concentration in the silicon nitride film was measured by secondary ion mass spectrometry (SIMS). The silicon nitride film is an example of an insulating film.
（条件１）
条件１では、準備した基板に対して温度安定化工程Ｓ２０、重水素プラズマ工程Ｓ３０及び濃度調整工程Ｓ４０をこの順番で実施した。温度安定化工程Ｓ２０及び重水素プラズマ工程Ｓ３０では、基板の温度を６３０℃に維持した。濃度調整工程Ｓ４０では、基板の温度を７００℃に制御した状態で、シリコン窒化膜をプラズマに晒すことなく処理容器１内に重水素ガス及び窒素ガスを供給しながら熱処理を行った。
(Condition 1)
Under condition 1, the temperature stabilization step S20, the deuterium plasma step S30, and the concentration adjustment step S40 were performed on the prepared substrate in this order. In the temperature stabilization step S20 and the deuterium plasma step S30, the substrate temperature was maintained at 630°C. In the concentration adjustment step S40, with the substrate temperature controlled to 700°C, heat treatment was performed while supplying deuterium gas and nitrogen gas into the processing container 1 without exposing the silicon nitride film to plasma.
（条件２）
条件２では、濃度調整工程Ｓ４０において、基板の温度を６３０℃に制御した状態で、シリコン窒化膜をプラズマに晒すことなく処理容器１内に窒素ガスのみを供給しながら熱処理を行った。その他の条件は、条件１と同じである。
(Condition 2)
In condition 2, during the concentration adjustment step S40, the substrate temperature was controlled to 630°C, and heat treatment was performed by supplying only nitrogen gas into the processing container 1 without exposing the silicon nitride film to plasma. All other conditions were the same as in condition 1.
（条件３）
条件３では、濃度調整工程Ｓ４０において、基板の温度を６３０℃から５７０℃まで連続的に低下させながら、シリコン窒化膜をプラズマに晒すことなく処理容器１内に窒素ガスのみを供給しながら熱処理を行った。その他の条件は、条件１と同じである。
(Condition 3)
In condition 3, during the concentration adjustment step S40, the substrate temperature was continuously reduced from 630°C to 570°C while heat treatment was performed by supplying only nitrogen gas into the processing container 1 without exposing the silicon nitride film to plasma. All other conditions were the same as in condition 1.
図５は、シリコン窒化膜中の重水素濃度の測定結果を示す図である。図５には、条件１～３により重水素が導入されたシリコン窒化膜中の重水素濃度を示す。図５中、横軸は濃度調整工程Ｓ４０における基板の温度［℃］を示し、縦軸はシリコン窒化膜中の重水素濃度［ａｔｏｍｓ／ｃｍ３］を示す。シリコン窒化膜中の重水素濃度は、ＳＩＭＳにより測定したシリコン窒化膜中の重水素濃度の膜厚方向における最大値を示す。 Figure 5 shows the measurement results of the deuterium concentration in the silicon nitride film. Figure 5 shows the deuterium concentration in the silicon nitride film into which deuterium has been introduced according to conditions 1 to 3. In Figure 5, the horizontal axis represents the substrate temperature [°C] in the concentration adjustment process S40, and the vertical axis represents the deuterium concentration [atoms/ cm³ ] in the silicon nitride film. The deuterium concentration in the silicon nitride film represents the maximum value in the film thickness direction of the deuterium concentration in the silicon nitride film measured by SIMS.
図５に示されるように、条件１では、条件２に比べてシリコン窒化膜中の重水素濃度が低いことが分かる。この結果から、重水素プラズマ工程Ｓ３０の後に処理容器１内に重水素ガスを供給しながら基板の温度を重水素プラズマ工程Ｓ３０の際の基板の温度よりも高くすることで、シリコン窒化膜中の重水素濃度を低くできることが示された。 As shown in Figure 5, the deuterium concentration in the silicon nitride film is lower under condition 1 compared to condition 2. This result indicates that the deuterium concentration in the silicon nitride film can be lowered by supplying deuterium gas into the processing vessel 1 after the deuterium plasma process S30 while raising the substrate temperature above the substrate temperature during the deuterium plasma process S30.
図５に示されるように、条件３では、条件２に比べてシリコン窒化膜中の重水素濃度が高いことが分かる。この結果から、重水素プラズマ工程Ｓ３０の後に処理容器１内に重水素ガスを供給することなく基板の温度を重水素プラズマ工程Ｓ３０の際の基板の温度よりも低くすることで、シリコン窒化膜中の重水素濃度を高くできることが示された。 As shown in Figure 5, the deuterium concentration in the silicon nitride film is higher under condition 3 compared to condition 2. This result demonstrates that the deuterium concentration in the silicon nitride film can be increased by lowering the substrate temperature below that of the substrate during the deuterium plasma process S30, without supplying deuterium gas into the processing vessel 1 after the deuterium plasma process S30.
以上の実施例により、重水素プラズマ工程Ｓ３０の後に、シリコン窒化膜をプラズマに晒すことなく基板の温度を変更して熱処理することで、シリコン窒化膜中への重水素の導入量を制御できると言える。 Based on the above examples, it can be said that the amount of deuterium introduced into the silicon nitride film can be controlled by changing the substrate temperature and performing heat treatment after the deuterium plasma process S30 without exposing the silicon nitride film to plasma.
今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.
上記の実施形態では、基板処理装置が複数の基板に対して一度に処理を行うバッチ式の装置である場合を説明したが、本開示はこれに限定されない。例えば、基板処理装置は基板を１枚ずつ処理する枚葉式の装置であってもよい。 In the above embodiment, a case was described where the substrate processing apparatus is a batch-type apparatus that processes multiple substrates at once, but this disclosure is not limited thereto. For example, the substrate processing apparatus may be a single-wafer apparatus that processes substrates one at a time.
Ｓ１０ 準備工程
Ｓ２０ 温度安定化工程
Ｓ３０ 重水素プラズマ工程
Ｓ４０ 濃度調整工程
S10 Preparation process S20 Temperature stabilization process S30 Deuterium plasma process S40 Concentration adjustment process
Claims (9)
前記処理容器内に収容された前記基板を第１温度に維持した状態で重水素ガスを含むガスから生成したプラズマに前記絶縁膜を晒し、前記絶縁膜に重水素を導入する工程と、
前記処理容器内に収容された前記基板を前記第１温度と異なる第２温度に制御した状態で前記絶縁膜を前記プラズマに晒すことなく熱処理し、前記絶縁膜に導入された前記重水素の濃度を調整する工程と、
を有する、基板処理方法。 A process of housing a substrate having an insulating film on its surface inside a processing container,
The process involves maintaining the substrate housed in the processing container at a first temperature, exposing the insulating film to a plasma generated from a gas containing deuterium gas, thereby introducing deuterium into the insulating film;
A step of heat-treating the insulating film without exposing it to the plasma while controlling the substrate housed in the processing container to a second temperature different from the first temperature, thereby adjusting the concentration of deuterium introduced into the insulating film,
A substrate processing method having the following characteristics.
請求項１に記載の基板処理方法。 The second temperature is determined based on a desired deuterium concentration.
The substrate processing method according to claim 1.
請求項１に記載の基板処理方法。 The adjustment step includes supplying an inert gas into the processing container.
The substrate processing method according to claim 1.
請求項１に記載の基板処理方法。 The second temperature is lower than the first temperature.
The substrate processing method according to claim 1.
請求項４に記載の基板処理方法。 The adjustment step is carried out without supplying the deuterium gas into the processing container.
The substrate processing method according to claim 4.
請求項１に記載の基板処理方法。 The second temperature is higher than the first temperature.
The substrate processing method according to claim 1.
請求項６に記載の基板処理方法。 The adjustment step includes supplying the deuterium gas into the processing container.
The substrate processing method according to claim 6.
請求項１に記載の基板処理方法。 The insulating film is a silicon nitride film.
The substrate processing method according to claim 1.
前記処理容器内にガスを供給するガス供給部と、
前記ガスからプラズマを生成するプラズマ生成部と、
制御部と、
を備え、
前記制御部は、
前記処理容器内に絶縁膜を表面に有する基板を収容する工程と、
前記処理容器内に収容された前記基板を第１温度に維持した状態で重水素ガスを含むガスから生成したプラズマに前記絶縁膜を晒し、前記絶縁膜に重水素を導入する工程と、
前記処理容器内に収容された前記基板を前記第１温度と異なる第２温度に制御した状態で前記絶縁膜を前記プラズマに晒すことなく熱処理し、前記絶縁膜に導入された前記重水素の濃度を調整する工程と、
を実行するように前記ガス供給部及び前記プラズマ生成部を制御するよう構成される、
基板処理装置。 A processing container and a gas supply unit that supplies gas into the processing container,
A plasma generation unit that generates plasma from the aforementioned gas,
Control unit and
Equipped with,
The control unit,
A step of housing a substrate having an insulating film on its surface in the processing container,
The process involves maintaining the substrate housed in the processing container at a first temperature, exposing the insulating film to a plasma generated from a gas containing deuterium gas, thereby introducing deuterium into the insulating film;
A step of heat-treating the insulating film without exposing it to the plasma while controlling the substrate housed in the processing container to a second temperature different from the first temperature, thereby adjusting the concentration of deuterium introduced into the insulating film,
The gas supply unit and the plasma generation unit are configured to be controlled to perform the following actions:
Circuit board processing equipment.
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