JP7651230B2 - 積層構造体、電子デバイス、電子機器及びシステム - Google Patents

積層構造体、電子デバイス、電子機器及びシステム Download PDF

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Publication number
JP7651230B2
JP7651230B2 JP2024508143A JP2024508143A JP7651230B2 JP 7651230 B2 JP7651230 B2 JP 7651230B2 JP 2024508143 A JP2024508143 A JP 2024508143A JP 2024508143 A JP2024508143 A JP 2024508143A JP 7651230 B2 JP7651230 B2 JP 7651230B2
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Japan
Prior art keywords
film
laminated structure
epitaxial
substrate
applied voltage
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JP2024508143A
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English (en)
Japanese (ja)
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JPWO2023176757A1 (https=
Inventor
健 木島
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Gaianixx Inc
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Gaianixx Inc
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Publication of JPWO2023176757A1 publication Critical patent/JPWO2023176757A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2024508143A 2022-03-14 2023-03-13 積層構造体、電子デバイス、電子機器及びシステム Active JP7651230B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022038742 2022-03-14
JP2022038742 2022-03-14
JP2022138841 2022-08-31
JP2022138841 2022-08-31
PCT/JP2023/009575 WO2023176757A1 (ja) 2022-03-14 2023-03-13 圧電体、積層構造体、電子デバイス、電子機器及びこれらの製造方法

Publications (2)

Publication Number Publication Date
JPWO2023176757A1 JPWO2023176757A1 (https=) 2023-09-21
JP7651230B2 true JP7651230B2 (ja) 2025-03-26

Family

ID=88023707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024508143A Active JP7651230B2 (ja) 2022-03-14 2023-03-13 積層構造体、電子デバイス、電子機器及びシステム

Country Status (3)

Country Link
JP (1) JP7651230B2 (https=)
TW (1) TW202401860A (https=)
WO (1) WO2023176757A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165243A (ja) 2002-11-11 2004-06-10 Seiko Epson Corp 圧電体デバイス、液体吐出ヘッド、強誘電体デバイス及び電子機器並びにこれらの製造方法
JP2011093788A (ja) 2009-10-01 2011-05-12 Canon Inc 強誘電体薄膜
JP2018081975A (ja) 2016-11-15 2018-05-24 株式会社ユーテック 膜構造体及びその製造方法
JP2019216181A (ja) 2018-06-13 2019-12-19 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165243A (ja) 2002-11-11 2004-06-10 Seiko Epson Corp 圧電体デバイス、液体吐出ヘッド、強誘電体デバイス及び電子機器並びにこれらの製造方法
JP2011093788A (ja) 2009-10-01 2011-05-12 Canon Inc 強誘電体薄膜
JP2018081975A (ja) 2016-11-15 2018-05-24 株式会社ユーテック 膜構造体及びその製造方法
JP2019216181A (ja) 2018-06-13 2019-12-19 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法

Also Published As

Publication number Publication date
WO2023176757A1 (ja) 2023-09-21
TW202401860A (zh) 2024-01-01
JPWO2023176757A1 (https=) 2023-09-21

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