JP7548022B2 - 受光モジュールの製造方法 - Google Patents
受光モジュールの製造方法 Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
- G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
Description
最初に、本開示の実施形態の内容を列記して説明する。本開示の一実施形態に係る受光モジュールの製造方法は、受光素子を配置する工程と、受光素子に光を集光するレンズを配置する工程と、レンズから一定距離離間した位置に光ファイバの先端面が位置するように光ファイバを配置する工程と、を備え、一定距離は、レンズの焦点距離からオフセットした距離である。
以下では、図面を参照しながら本開示に係る受光モジュールの製造方法の具体例について説明する。なお、本発明は後述する例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の範囲における全ての変更が含まれることが意図される。図面の説明において、同一又は相当する要素には同一の符号を付し、重複する説明を適宜省略する。図面は、理解の容易化のため、一部を簡略化又は誇張して描いている場合があり、寸法比率等は図面に記載のものに限定されない。
以下では、本開示に係る受光モジュールの製造方法の実施例について説明する。なお、本発明は、以下の実施例には限定されない。実施例では、受光モジュール1の光学系Aを用いて受光素子21が受光するビームに関する種々のシミュレーションを行った。まず、図2に示されるように、光ファイバ13の先端面13bとレンズ23との距離が300μmであるときにビームの中心が受光素子21の受光面の中心に位置するように光ファイバ13の位置を決定した。レンズ23と受光素子21との距離Eは、2160μmとした。ビームの波長は1310nmとし、光ファイバ13の先端面13bにおけるMFDは9.2μmとした。光ファイバ13の先端面13bは、フェルール11の中心軸線に垂直な面に対して4°傾斜させた。レンズ23としては非球面レンズを用いた。受光素子21の受光径R1は230μmである。また、レンズ23の中心に対して受光素子21の受光面の中心をX方向に100μmオフセットして配置した。
10…光レセプタクル
11…フェルール
11b…第1端面
11c…第2端面
11d…外周面
11f…ファイバ保持孔
12…ファイバスタブ
13…光ファイバ
13b,13c…先端面
14…スリーブ
14b…貫通孔
14c…基端面
14d…先端面
14f…外周面
16…コネクタスリーブ
16b…基端
16c…先端
16d…外周面
16f…内周面
19…接続スリーブ
20…受光部
21…受光素子
21b…受光部
21c…電極
21d…パッド電極
21f…弧状部
21g…接続部
22…レンズホルダ
22b…一端
22c…他端
23…レンズ
23b…樹脂
24…ステム
24b…主面
25…キャリア
26…集積回路チップ
27…リードピン
29…金具
29b…一端面
29c…他端面
29d…窓穴
A…光学系
D…ディップ
E…距離
L…光
R1…受光径
R2…集光径
Z…距離
Z1…一定距離
Claims (6)
- 受光素子を配置する工程と、
前記受光素子に光を集光するレンズを配置する工程と、
前記レンズから一定距離離間した位置に光ファイバの先端面が位置するように前記光ファイバを配置する工程と、
を備え、
前記一定距離は、前記レンズの焦点距離からオフセットした距離であり、
前記光ファイバを配置する工程よりも前に、前記一定距離を定める工程を備え、
前記一定距離を定める工程では、前記受光素子が受光する光の感度が、前記光ファイバが前記レンズから前記焦点距離離間した位置に配置された場合における最大感度の一定割合以上となる距離を前記一定距離として定め、
前記一定距離を定める工程は、前記受光素子に第1の光を入力する工程と、前記受光素子に前記第1の光よりも強度が小さい第2の光を入力する工程と、を含んでおり、
前記第1の光を入力する工程では、前記受光素子が受光する光の感度が低下する前記レンズから前記光ファイバまでの距離であるディップ距離を測定し、
前記第2の光を入力する工程では、前記ディップ距離から離れた距離であって、且つ、前記受光素子が受光する光の感度が前記最大感度の一定割合以上となる距離を前記一定距離として定める、
受光モジュールの製造方法。 - 前記一定距離は、前記焦点距離よりも長い、
請求項1に記載の受光モジュールの製造方法。 - 前記一定距離は、前記焦点距離よりも短い、
請求項1に記載の受光モジュールの製造方法。 - 前記レンズは、非球面レンズである、
請求項1から請求項3のいずれか一項に記載の受光モジュールの製造方法。 - 前記レンズは、レンズホルダによって保持されており、
前記光ファイバは、筒状のスリーブに保持されており、
前記レンズを配置する工程の後に、前記レンズホルダ及び前記スリーブに接合される接合スリーブを配置する工程を更に備える、
請求項1から請求項4のいずれか一項に記載の受光モジュールの製造方法。 - 前記受光素子における光の受光径が前記レンズの集光径よりも大きい、
請求項1から請求項5のいずれか一項に記載の受光モジュールの製造方法。
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JP2021003503A JP7548022B2 (ja) | 2021-01-13 | 2021-01-13 | 受光モジュールの製造方法 |
US17/570,067 US12099244B2 (en) | 2021-01-13 | 2022-01-06 | Method of manufacturing light receiving module |
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JP2021003503A JP7548022B2 (ja) | 2021-01-13 | 2021-01-13 | 受光モジュールの製造方法 |
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JP7548022B2 true JP7548022B2 (ja) | 2024-09-10 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005250117A (ja) | 2004-03-04 | 2005-09-15 | Hitachi Cable Ltd | 波長多重光受信モジュール |
JP2010278285A (ja) | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 受光モジュールの製造方法及び製造装置 |
CN109633825A (zh) | 2017-10-06 | 2019-04-16 | 住友电气工业株式会社 | 波分解复用系统和光接收器模块 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0552792A1 (en) * | 1992-01-24 | 1993-07-28 | Nec Corporation | Photoreceiver having semi-conductor light receiving element and lens |
JPH0621485A (ja) | 1992-06-30 | 1994-01-28 | Nec Corp | 半導体受光モジュール |
JP3324286B2 (ja) * | 1994-06-29 | 2002-09-17 | 住友電気工業株式会社 | アナログpdモジュール及びその製造方法 |
JP3937911B2 (ja) * | 2002-05-10 | 2007-06-27 | 住友電気工業株式会社 | 光送受信モジュール及びこれを用いた光通信システム |
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- 2021-01-13 JP JP2021003503A patent/JP7548022B2/ja active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005250117A (ja) | 2004-03-04 | 2005-09-15 | Hitachi Cable Ltd | 波長多重光受信モジュール |
JP2010278285A (ja) | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 受光モジュールの製造方法及び製造装置 |
CN109633825A (zh) | 2017-10-06 | 2019-04-16 | 住友电气工业株式会社 | 波分解复用系统和光接收器模块 |
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US12099244B2 (en) | 2024-09-24 |
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