JP7522899B1 - Semiconductor Processing Equipment - Google Patents

Abstract

[Problem] To provide a high-temperature compatible vacuum gate valve for use in semiconductor processing equipment and a method for blocking radiant heat for a high-temperature compatible vacuum gate valve, which can prevent adverse effects of heat on the sealant and valve body. [Solution] A high-temperature compatible vacuum gate valve 50 for use in a semiconductor processing equipment 10 having a space 12 for processing an object to be processed, which comprises a valve body 56 and a sealant 62 provided on the valve body 56 for maintaining the space 12 airtight, and a radiant heat shield for blocking radiant heat is provided on the surface of the valve body 56 exposed on the side of the space 12, the radiant heat shield being a reflector 68 which covers at least a portion of the valve body 56 and reflects radiant heat. [Selected Figure] Figure 9

Description

The present invention relates to a semiconductor processing apparatus equipped with a high temperature compatible vacuum gate valve .

In conventional vacuum heat treatment equipment, such as vacuum annealing furnaces, high-temperature oxidation furnaces, high-temperature CVD furnaces, and epitaxial growth furnaces, when a workpiece such as a silicon substrate is transferred from an atmospheric pressure environment to the inside of the treatment chamber, a load lock chamber is provided to prevent contamination of the inside of the treatment chamber, and a process is required in which the atmosphere in a vacuum spare chamber such as the load lock chamber is evacuated or replaced with an inert atmosphere such as nitrogen gas to remove residual moisture adhering to the workpiece. For this reason, for example, a gate valve is provided between the atmospheric pressure environment and the load lock chamber, and between the load lock chamber and the treatment chamber to separate the atmospheric pressure from the vacuum.

In semiconductor manufacturing using substrate materials such as silicon, GaN, and SiC, there are several hundred processing steps, such as heat treatment, oxidation, nitridation, film formation, and etching, many of which are carried out in a vacuum or airtight environment. In atmospheric pressure processes, if impurities containing oxygen or moisture remain in the processing chamber and on the surface of the workpiece, they can affect the process characteristics, so it is necessary to remove the impurities from the surface of the workpiece inside a vacuum reserve chamber such as a load lock chamber. In this case, gate valves are installed between the atmospheric pressure environment side and the load lock chamber, and between the load lock chamber and the processing chamber, and the inside of the vacuum reserve chamber such as the load lock chamber is evacuated from atmospheric pressure to a vacuum to remove moisture and other remaining on the surface of the workpiece.

As shown in Patent Document 1, when a transfer chamber is connected to transfer workpieces from a load lock chamber to multiple processing chambers using a vacuum robot, multiple gate valves are required. Depending on the conditions of use, the gate valves are affected by pressure differences, environmental temperature, and in the case of CVD and etching, the atmosphere is affected by the type of material gas, resulting in film formation, erosion, etc. As a result, there are problems with product yields and a shortened product lifespan of the gate valves. To prevent these problems, in addition to the pressure difference between atmospheric pressure and vacuum and heat leakage to the outside of the processing chamber, the gate valves require technical measures to eliminate minute foreign objects.

JP 2022-65559 A JP 2020-125815 A JP 2016-4985 A International Publication WO2011/43189 JP 2020-61493 A JP 2019-91930 A JP 2018-56566 A JP 2022-175988 A

However, because the inside of the processing chamber reaches high temperatures of 800 to 2000°C, the thermal energy received by the gate valve that separates the processing chamber directly heats the valve body and sealing material that make up the gate valve. This causes the sealing material, which has a low melting point, to melt and disappear or evaporate. Furthermore, depending on the material of the valve body, the valve body itself may deform or melt.

In view of the above circumstances, an object of the present invention is to provide a semiconductor processing apparatus capable of preventing adverse effects of heat on the seal material and valve body of a high-temperature resistant vacuum gate valve .

The first invention is a semiconductor processing apparatus having a space for processing a workpiece , the space having a heat source holding mechanism in which a heat source made of a light-transmitting material is supported by a support part via an airtight member, a radiant heat blocking part for blocking radiant heat is provided on an optical path along which light is irradiated to the airtight member at a contact part of the heat source with the airtight member , an outlet is formed in the space through which the workpiece can pass , and a high-temperature compatible vacuum gate valve is provided at the outlet , the high-temperature compatible vacuum gate valve has a valve body and a sealing material provided on the valve body for maintaining the space airtight, and a radiant heat shielding part for blocking radiant heat is provided on the surface of the valve body exposed to the space side.

In the first invention, the radiant heat shielding portion may be a reflector that covers at least a portion of the valve body and reflects the radiant heat.

In the first invention, the reflector may be made of a ceramic material.

In the first invention, the reflector may be formed with a metal film that reflects the radiant heat.

In the first invention, the reflector may be provided with an optical film that reflects the radiant heat.

In the first invention, the reflector may be made of opaque quartz that reflects the radiant heat.

The present invention makes it possible to prevent adverse effects of heat on the sealing material and valve body.

1 is a vertical cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention; 2 is a vertical cross-sectional view of a lid constituting the semiconductor processing apparatus according to the embodiment of the present invention. FIG. 1 is a plan view of a quartz heater that is a heat source used in a semiconductor processing apparatus according to an embodiment of the present invention. 1 is a plan view of a configuration in which a plurality of quartz heaters, which are heat sources used in a semiconductor processing apparatus according to an embodiment of the present invention, are arranged in a ring shape. 1 is an enlarged vertical cross-sectional view showing a heat source holding mechanism in which a quartz heater used in a semiconductor processing apparatus according to an embodiment of the present invention is attached to a lid portion. 1 is a vertical cross-sectional view showing the thermal propagation of heating energy generated by a quartz heater used in a semiconductor processing apparatus. 1 is a vertical cross-sectional view of a configuration in which a metal film is applied to a part of a quartz heater of a heat source holding mechanism according to an embodiment of the present invention. FIG. FIG. 11 is a vertical cross-sectional view of a configuration in which a portion of a quartz heater of a heat source holding mechanism according to an embodiment of the present invention is made of opaque quartz. 1 is a conceptual diagram of a semiconductor processing apparatus provided with a high-temperature compatible vacuum gate valve according to an embodiment of the present invention. 1A is a schematic diagram of a high-temperature vacuum gate valve according to one embodiment of the present invention, in which a valve body having a movable reflector on one side closes the passage port of the valve body, and FIG. 1B is a schematic diagram of a high-temperature vacuum gate valve according to one embodiment of the present invention, in which a valve body having a movable reflector on one side opens (opens) the passage port of the valve body. 1A is a schematic diagram of a valve body having movable reflectors on one and the other side of a high-temperature-compatible vacuum gate valve according to one embodiment of the present invention, with the valve body closing the passage port of the valve body; and FIG. 1B is a schematic diagram of a valve body having movable reflectors on one and the other side of a high-temperature-compatible vacuum gate valve, with the valve body opening (released) the passage port of the valve body. 1A is a schematic diagram of a valve body having a reflector fixed to one side of a high-temperature-compatible vacuum gate valve according to one embodiment of the present invention, with the valve body closing the passage port of the valve body; and FIG. 1B is a schematic diagram of a valve body having a reflector fixed to one side of a high-temperature-compatible vacuum gate valve, with the valve body opening (open) the passage port of the valve body. 1A is a schematic diagram of a valve body having reflectors fixed to one and the other sides of a high-temperature-compatible vacuum gate valve according to one embodiment of the present invention, with the valve body's passage port closed; and FIG. 1B is a schematic diagram of a valve body having reflectors fixed to one and the other sides of a high-temperature-compatible vacuum gate valve, with the valve body's passage port open. 1A is a schematic diagram of a high-temperature vacuum gate valve according to one embodiment of the present invention, in which a valve body having a movable reflector with a radiant heat shielding portion on one side closes the passage port of the valve body, and FIG. 1B is a schematic diagram of a high-temperature vacuum gate valve according to one embodiment of the present invention, in which a valve body having a movable reflector with a radiant heat shielding portion on one side closes the passage port of the valve body. 1A is a schematic diagram of a valve body having a reflector that is movable on one side and has a radiant heat shielding portion on one side and the other side of a high-temperature-compatible vacuum gate valve according to one embodiment of the present invention, with the passage port of the valve body closed; and FIG. 1B is a schematic diagram of a valve body having a reflector that is movable on one side and has a radiant heat shielding portion on one side and the other side of a high-temperature-compatible vacuum gate valve, with the passage port of the valve body open (open). FIG. 1A is a schematic diagram of a valve body fixed to one side of a high-temperature vacuum gate valve according to one embodiment of the present invention, the valve body being equipped with a reflector having a radiant heat shielding portion and closing the passage port of the valve body; FIG. 1B is a schematic diagram of a valve body fixed to one side of a high-temperature vacuum gate valve, the valve body being equipped with a reflector having a radiant heat shielding portion and opening (opening) the passage port of the valve body. FIG. 1A is a schematic diagram of a valve body having a reflector with a radiant heat shielding portion fixed to one side and the other side of a high-temperature-compatible vacuum gate valve according to one embodiment of the present invention, with the valve body having a reflector with a radiant heat shielding portion closing the passage port of the valve body; and FIG. 1B is a schematic diagram of a valve body having a reflector with a radiant heat shielding portion fixed to one side and the other side of a high-temperature-compatible vacuum gate valve, with the valve body opening (opening) the passage port of the valve body. FIG. 1A is a schematic diagram of a valve body having a refrigerant flow path through which a refrigerant flows of a high-temperature compatible vacuum gate valve according to one embodiment of the present invention, with the valve body's passage opening closed; FIG. 1B is a schematic diagram of a valve body having a refrigerant flow path through which a refrigerant flows of a high-temperature compatible vacuum gate valve, with the valve body's passage opening opened. 1A is a schematic diagram of a high-temperature vacuum gate valve according to one embodiment of the present invention, showing a valve body having a refrigerant flow path through which a refrigerant flows and a radiant heat shielding portion with the valve body opening closed; and FIG. 1B is a schematic diagram of a high-temperature vacuum gate valve according to one embodiment of the present invention, showing a valve body having a refrigerant flow path through which a refrigerant flows and a radiant heat shielding portion with the valve body opening (open).

A high-temperature compatible vacuum gate valve and a method for blocking radiant heat from a high-temperature compatible vacuum gate valve used in a semiconductor processing apparatus according to one embodiment of the present invention will be described with reference to the drawings.

[Overall configuration of semiconductor processing equipment]
As shown in FIG. 1, the semiconductor processing apparatus 10 is an apparatus for accommodating a workpiece (e.g., a silicon substrate, a semiconductor wafer, or a silicon wafer; not shown) in a space 12 formed inside the apparatus and for heating the workpiece to perform heat treatment. The semiconductor processing apparatus 10 is composed of a base 14 on which the workpiece is placed, a lid 16 that covers the base 14 from above, and a peripheral wall 18 that surrounds the base 14 and the lid 16. The space 12 surrounded by the base 14, the lid 16, and the peripheral wall 18 becomes an airtight space that can isolate the workpiece from the atmosphere during heat treatment. In other words, the semiconductor processing apparatus 10 is also called a heat treatment chamber. The space 12 is also called a treatment space.

As shown in FIG. 2, the lid 16 has a lid body 20 and a heating source 22 arranged on the inner surface side of the lid body 20. The heating source 22 is made of a light-transmitting material, such as a halogen heater, and specifically, a quartz heater is used. In addition to quartz, the heating source 22 may be made of glass, sapphire ceramic materials, acrylic resin, plastic resin, magnesium fluoride, calcium fluoride, or other crystalline materials, as long as the material is light-transmitting. In the following, the heating source 22 will be described using a quartz heater 22H as an example. In this case, the semiconductor processing device 10 is referred to as a halogen heater container.

As shown in Figures 3 and 4, since the workpiece is formed in a disk shape in a plan view, it is preferable that the quartz heater 22H is formed in a circular and annular shape in a plan view.

The quartz heater 22H has gaps 24 that are partially discontinuous along the circumferential direction in a plan view. These gaps 24 are non-light-emitting portions 24N. For example, in the quartz heater shown in FIG. 4, four non-light-emitting portions 24N are formed along the circumference, but the number is not limited to four.

The quartz heater 22H is made up of multiple circular, annular quartz heaters with different diameters arranged along the radial direction. In the quartz heater 22H of this arrangement, multiple non-light-emitting portions 24N are present on a straight line along the radial direction, and light-emitting portions 25B (see FIG. 4) of the quartz heater 22H are interposed between adjacent non-light-emitting portions 24N along the radial direction. The light-emitting portions 25B refer to the portions where the quartz tube of the quartz heater 22H is present.

As shown in FIG. 1, a reflective treatment plate 26 is provided on the inner surface of the lid body 20. The reflective treatment plate 26 reflects the radiant heat emitted from the quartz heater 22H, preventing the heat from being transferred to the inside of the lid body 20. This prevents thermal damage to the lid body 20 due to fixed conduction heat. This is not limited to the reflective treatment plate 26, and a reflective treatment film may be applied to the inner surface of the lid body 20.

A cooling liquid flow path 28 for flowing the cooling liquid is formed inside the lid body 20. The entire lid 16 is cooled by flowing (circulating) the cooling liquid through the cooling liquid flow path 28.

[Heat source holding mechanism]
Next, a heat source holding mechanism used in the semiconductor processing apparatus will be described.

As shown in Figures 1 and 2, the quartz heater 22H is held by the lid 16. The lid 16 is formed with a mounting flange 30 that extends vertically (in the direction of gravity). Therefore, the lid 16 is formed with a recess 32 surrounded by the inner surface of the lid 16 and the mounting flange 30. The quartz heater 22H is located in this recess 32. The reflection treatment plate 26 is provided from the inner surface of the lid 16 to the mounting flange 30, and reflects radiant heat.

As shown in FIG. 5, the quartz heater 22H is composed of a first heater portion 23A extending horizontally and a second heater portion 23B that is connected to the first heater portion 23A and extends vertically (in the direction of gravity). A through hole 34 is formed in the lid body 20, penetrating it in the thickness direction, and the second heater portion 23B of the quartz heater 22H is inserted into the through hole 34. Note that, for example, the second heater portion 23B is formed by bending it vertically to the first heater portion 23A, but the two may also be formed of separate members and connected to each other.

As a result, the circumferentially adjacent quartz heaters 22H are discontinuous at the second heater portion 23B, as shown in Figures 3 and 4, forming non-light-emitting portions 24N. In addition, the separation distance between the first heater portions 23A of the circumferentially adjacent quartz heaters 22H can be set to the minimum distance T (see Figure 5), minimizing the non-light-emitting portions 24N and preventing the semiconductor processing device 10 from becoming larger.

The second heater portion 23B of the quartz heater 22H is formed, for example, as a non-heat generating portion.

As shown in FIG. 5, an airtight member 36 is disposed on the inner peripheral surface of a through hole 34 that penetrates the lid body 20 in the thickness direction. The airtight member 36 holds the quartz heater 22H by pressing against the second heater portion 23B of the quartz heater 22H. The airtight member 36 is, for example, an elastic member, and is constituted by an O-ring. The O-ring is made of an elastomer material. For example, a bind rubber or a fluororubber is used as the elastomer material.

A compression ring 38 for pressing against the airtight member 36 and a retaining flange 40 for fixing the compression ring 38 to the lid body 20 are provided on the inner circumferential surface of the through hole 34. As a result, the airtight member 36 is fixed to the inner circumferential surface of the through hole 34.

A current introduction part 42 that connects to the second heater part 23B of the quartz heater 22H protrudes from the upper side (atmosphere side) of the lid part 16. When a voltage is applied to the current introduction part 42, the first heater part 23A of the quartz heater 22H generates heat, and the workpiece is heated. Because the current introduction part 42 is exposed to the atmosphere side, there is no heat transfer to the current introduction part 42, and no technical problems due to heat generation occur.

[Radiation heat blocking treatment of heat source holding mechanism]
Next, a radiant heat blocking process for the heat source holding mechanism used in the semiconductor processing apparatus 10 will be described.

As shown in FIG. 7, a radiant heat blocking portion that blocks radiant heat is provided near the quartz heater 22H, that is, at a position on the optical path where the light from the quartz heater 22H can be irradiated to the airtight member 36. For example, a radiant heat blocking portion that blocks radiant heat is provided at the outer surface of the quartz heater 22H and the contact portion with the airtight member 36. In other words, a metal film (metal reflective film) X1 is applied to the outer surface of the second heater section 23B of the quartz heater 22H as a radiant heat blocking portion. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high thermal reflectivity and are difficult to absorb heat, or is made of a mixture of any material. The metal film X1 reflects the radiant heat from the first heater section 23A of the quartz heater 22H, and prevents the heat from being transferred to the inside of the second heater section 23B. Therefore, the second heater section 23B maintains its function as a non-heat generating section.

In addition, as an alternative to applying a metal film (metal reflective film) X1 to the outer surface of the second heater part 23B of the quartz heater 22H, for example, it is also possible to form the metal film X1 as a separate member and cover or wrap it around the outer surface of the second heater part 23B of the quartz heater 22H.

In another embodiment, an optical film (optical filter film, infrared filter film, not shown) is applied to the outer surface of the second heater section 23B of the quartz heater 22H as a radiant heat blocking section. The optical film reflects the radiant heat from the quartz heater 22H and prevents the heat from being transferred to the inside of the second heater section 23B. Therefore, the second heater section 23B maintains its function as a non-heat generating section. As the optical film, for example, frosted glass, a material that causes diffuse reflection on quartz, or a metal that is foamed to scatter light or has a different refractive index to prevent light from passing through may be used.

In addition, instead of applying an infrared filter film (optical filter film) to the surface of the second heater part 23B of the quartz heater 22H, for example, it is also possible to form an infrared filter film from a separate material and cover or wrap it around the surface of the second heater part 23B of the quartz heater 22H.

As another embodiment, as shown in FIG. 8, the material of the second heater section 23B of the quartz heater 22H may be made of opaque quartz X2, the material of the first heater section 23A may be made of transparent quartz, and the end of the opaque quartz X2 and the end of the transparent quartz may be fused and connected. Although the connection section between the end of the opaque quartz X2 and the end of the transparent quartz is made of transparent quartz, a radiant heat blocking section can be formed in the second heater section 23B. This allows the second heater section 23B to maintain its function as a non-heat generating section.

In addition, instead of constructing the second heater section 23B of the quartz heater 22H from opaque quartz X2, it is also possible to, for example, create a radiant heat reflecting member made of opaque quartz X2 as a separate member, and cover or wrap the outer surface of the second heater section 23B of the quartz heater 22H with the radiant heat reflecting member.

Next, we will explain the effect of the radiant heat blocking process on the heat source holding mechanism used in the semiconductor processing device 10.

As shown in Figures 5 to 8, in a configuration in which the second heater portion 23B of the quartz heater 22H is inserted into the through hole 34 of the lid body 20 and the airtight member 36 is in contact with and holds the second heater portion 23B, the heating energy (see the arrow in Figure 6) generated in the first heater portion 23A of the quartz heater 22H is thermally propagated toward the second heater portion 23B, causing the temperature of the second heater portion 23B to become high. At this time, the heating energy is also thermally propagated to the airtight member 36 in contact with the second heater portion 23B, causing the temperature of the airtight member 36 to become high.

In more detail, quartz can generally be applied with heat energy in the range of visible light 400 nm to infrared light 2700 nm, but it has the property of penetrating in the radial direction (pipe cross-sectional direction) of the quartz tube centered on the heat source, as well as in the axial direction of the quartz tube. For this reason, in a configuration in which the quartz heater 22H is supported vertically (in the direction of gravity) by the airtight member 36, the airtight member 36 is affected by the heat of visible light to infrared light transmitted through the wall of the quartz tube. For this reason, the heating energy is also transmitted to the airtight member 36 in contact with the second heater section 23B, causing it to become hot, and if this temperature reaches or exceeds the heat resistance temperature of the airtight member 36, the airtight member 36 will melt or burn.

For these reasons, during heat treatment in the semiconductor processing device 10, the airtight member 36 reaches an abnormally high temperature, causing the airtight member 36 to melt or carbonize, and even to lose elasticity. This can result in a gap being formed between the quartz heater 22H and the through-hole 34 of the lid body 20, which can cause a technical problem of heat escaping to the outside. If heat leaks to the outside, the heat treatment of the workpiece becomes insufficient, which can cause defects. Furthermore, if the airtight member 36 melts, the holding force that holds the quartz heater 22H weakens, and there is a risk of the quartz heater 22H falling off.

In this embodiment, as shown in FIG. 7, a metal film (metal reflective film) X1 is applied to the outer surface of the second heater section 23B of the quartz heater 22H as a radiant heat blocking section. Therefore, the heating energy generated by the first heater section 23A of the quartz heater 22H is blocked by the metal film X1, and the heat is not conducted to the second heater section 23B. This makes it possible to prevent the temperature of the second heater section 23B from becoming too high. As a result, it is also possible to prevent the temperature of the airtight member 36 in contact with the second heater section 23B from becoming too high, and deterioration of the airtight member 36 can be prevented.

Because deterioration of the airtight member 36 can be prevented, the holding force of the airtight member 36 for the second heater section 23B can be secured. This prevents heat leakage to the outside and the quartz heater 22H from falling off.

The same effect can also be obtained by applying an infrared filter film (optical filter film) made of metal or dielectric material to the outer surface of the second heater section 23B of the quartz heater 22H as a radiant heat blocking section.

As shown in FIG. 8, the same effect can be obtained even if the material of the second heater section 23B of the quartz heater 22H is made of opaque quartz X2.

[High-temperature resistant vacuum gate valve and method for blocking radiant heat from the high-temperature resistant vacuum gate valve]
Next, the configuration of the high-temperature resistant vacuum gate valve and the radiant heat blocking method for the high-temperature resistant vacuum gate valve installed in the semiconductor processing equipment will be described in detail. The high-temperature resistant vacuum gate valve and the radiant heat blocking method for the high-temperature resistant vacuum gate valve are mainly divided into two embodiments. Below, the first embodiment and the second embodiment will be described separately.

[First embodiment]
The high-temperature resistant vacuum gate valve and the method for blocking radiant heat of the high-temperature resistant vacuum gate valve of the first embodiment are configured to provide the high-temperature resistant vacuum gate valve with a reflector. The "reflector" is also called a radiation shield (hereinafter the same).

As shown in FIG. 9, the semiconductor processing apparatus 10 is provided with a high-temperature compatible vacuum gate valve 50. The high-temperature compatible vacuum gate valve 50 is preferably disposed on the atmospheric pressure environment side of the semiconductor processing apparatus 10. Specifically, an unloading port 11 through which the workpiece can pass is formed in the side wall of the semiconductor processing apparatus 10. The high-temperature compatible vacuum gate valve 50 is provided so as to communicate with the unloading port 11.

The high-temperature compatible vacuum gate valve 50 is composed of a valve box 54 having a passage port 52 connected to the discharge port 11, a valve body 56 capable of opening and closing the passage port 52 of the valve box 54, and a sealant 62 provided at the tip of the valve body 56 and pressed against an inner wall 60 located on the outer cylinder 58 of the valve box 54 when the valve body 56 closes (closes) the passage port 52 of the valve box 54.

The outer cylinder 58 constitutes at least a part of the valve box 54. The inner wall 60 constitutes at least a part of the outer cylinder 58.

The sealing material 62 is made of, for example, an elastomer material, rubber, etc. The sealing material 62 may be made of the same material as other sealing materials used in general semiconductor manufacturing equipment.

The inside of the valve body 56 shown in Figures 10 to 14 does not have a cooling mechanism, and no refrigerant such as cooling water flows (circulates). This eliminates the possibility of refrigerant such as cooling water leaking and entering the space 12 of the semiconductor processing device 10.

As shown in FIG. 9, the space 12 of the semiconductor processing apparatus 10 reaches 800 to 2000°C when the workpiece is being processed. Therefore, the thermal energy received by the high-temperature vacuum gate valve 50 that separates the space 12 directly heats the valve body 56 and the sealant 62 that make up the high-temperature vacuum gate valve 50. This causes the sealant 62, which has a low melting point, to melt and disappear or evaporate. Furthermore, depending on the material of the valve body 56, the valve body may deform or melt. This embodiment can solve these technical problems.

As shown in FIG. 10, the valve box 54 has a retraction section 64 for the valve body 56 to retract. The retraction section 64 is, for example, a space in which the valve body 56 is stored. When the passage port 52 of the valve box 54 is opened (opened), the valve body 56 is positioned in the retraction section 64. On the other hand, when the passage port 52 of the valve box 54 is closed, the valve body 56 is sent out from the retraction section 64 and positioned so as to block the passage port 52. When the valve body 56 moves to a position where it blocks the passage port 52, the sealant 62 is pressed against the inner wall 60 of the outer tube 58 of the valve box 54 and is in an elastically deformed state. This achieves airtightness of the space 12.

The driving source for driving the valve body 56 is not shown, but may be a motor or a cylinder (air or hydraulic), etc.

A recess 66 is formed on the surface of the valve body 56 exposed on the space 12 side when viewed from the side (see FIG. 10). A reflector 68 is arranged to cover the recess 66 of the valve body 56 and acts as a radiant heat blocking part that reflects radiant heat. Therefore, the reflector 68 covers at least a part of the surface of the valve body 56 exposed on the space side.

A recess 66 is located between the valve body 56 and the reflector 68, resulting in a structure in which a predetermined gap 70 is formed. It is preferable that this gap 70 is set to a depth such that when the valve body 56 blocks the passage port 52 as shown in FIG. 10(A), the distance between the valve body 56 and the reflector 68 is, for example, 1 mm or more. Also, when the valve body 56 opens the passage port 52 as shown in FIG. 10(B), the distance between the valve body 56 and the reflector 68 may be, for example, 1 mm or more, or there may be no gap.

As shown in FIG. 10(B), when the valve body 56 is stored in the evacuation section 64, the reflector 68 enters the gap 70 in the recess 66. This allows the valve body 56 to be stored in the evacuation section 64 without the reflector 68 interfering with any part of the valve box 54. On the other hand, as shown in FIG. 10(A), when the valve body 56 leaves the evacuation section 64 to block the passage port 52, the sealant 62 is pressed against the inner wall 60 of the outer cylinder 58 of the valve box 54, sealing the space 12 (see FIG. 9). In this state, a predetermined gap 70 is formed between the reflector 68 and the valve body 56.

Note that the mechanism or structure for allowing the reflector 68 to enter the gap 70 of the recess 66 is not shown, but may be, for example, a link mechanism or a slide mechanism.

The valve body 56, reflector 68, link mechanism (not shown), and slide mechanism (not shown) are preferably made of metal, ceramic material, or other material with a high melting point that can withstand the processing temperature of the workpiece. These materials refer to materials with a melting point higher than the heating temperature of the heat source 22. Materials used for gate valves installed in conventional semiconductor processing equipment can be used.

When the reflector 68 is made of a ceramic material, it is preferable to increase the reflectivity by polishing the ceramic material, for example.

As a result, when processing of the workpiece is being performed, as shown in FIG. 10(A), the valve body 56 closes the passage port 52 and the space 12 is sealed, but even if thermal energy from the heating source 22 is irradiated onto the reflector 68, it is reflected by the reflector 68 and is difficult to transfer to the valve body 56. In particular, since a gap 70 is formed between the reflector 68 and the valve body 56, the heat received by the reflector 68 is difficult to transfer to the valve body 56 due to the gap 70, and the heat is diffused as it passes through the gap 70 by the air flow.

Here, the recess 66 formed in the valve body 56 is not limited to only the surface on one side of the valve body 56. For example, as shown in FIG. 11, a structure in which the recess 66 is formed on both sides of the valve body 56 on one side and the other side is also possible. Specifically, when a space for heat-treating the object to be treated is provided on both sides of the valve body 56, thermal energy from the space 70 is irradiated to both sides of the valve body 56. In this configuration, recesses 66 are formed on both sides of the valve body 56 on one side and the other side, and a reflector 68 is installed to cover each recess 66, and when the valve body 56 blocks the passage port 52, a predetermined gap 70 is formed between the surface on one side of the valve body 56 and the reflector 68. Also, if a predetermined gap 70 is formed between the surface on the other side of the valve body 56 and the reflector 68, the reflector 68 can block the thermal energy from the space 12, and the valve body 56 can be prevented from being irradiated with thermal energy.

It is also possible to adopt a configuration in which the recess 66 is not formed on the surface of the valve body 56. For example, as shown in FIG. 12, a reflector 68 is disposed on the surface of the valve body 56 exposed to the space 12 side, and the reflector 68 is fixed to the valve body 56 side by an arm member 72. The arm member 72 is preferably formed of a metal or ceramic material or other material that has a melting point higher than the temperature of the heat source 22.

In a configuration in which the reflector 68 is fixed to the valve body 56 side by the arm member 72, the reflector 68 does not approach the valve body side even when the valve body 56 is stored in the retraction section 64. Even when the valve body 56 is blocking the passage port 52, the distance between the valve body 56 and the reflector 68 does not change. This eliminates the need for a mechanism that moves the reflector 68 to change the distance between the reflector 68 and the valve body 56, making it possible to reduce the number of parts. As a result, the durability of the valve body 56 is increased, and maintenance efficiency is improved.

As shown in FIG. 13, arm members 72 may be provided on one side and the other side of the valve body 56, and reflectors 68 may be arranged on both sides.

As described above, by reflecting the radiant heat with the reflector 68, the temperature rise of the valve body 56 can be suppressed, and the temperature of the valve body 56 can be controlled to be below the melting point of the sealing material 62. In addition, the heat transfer effect from the valve body 56 to the sealing material 62 arranged at the tip of the valve body 56 is weakened, suppressing the temperature rise of the sealing material 62. As a result, the temperature of the sealing material 62 becomes below the melting point, and the sealing material 62 can be prevented from melting or disappearing.

Next, we will explain a configuration (improvement example) that further improves the radiant heat blocking function for the valve body.

As shown in Figures 14 to 17, a reflector 68 is disposed near the valve body 56, and the surface of the reflector 68 exposed to the space 12 side is coated with a metal film (metal reflective film) X1 as a radiant heat blocking section that reflects radiant heat. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have high thermal reflectivity and do not easily absorb heat, either alone or as a mixture of any other material. The metal film X1 reflects the radiant heat from the space 12, preventing it from being transferred to the reflector 68.

In addition, instead of applying a metal film (metal reflective film) X1 to the reflector 68, for example, it is also possible to form the metal film X1 from a separate member and cover or wrap it around the outer surface of the reflector 68.

In another embodiment, an optical film (optical filter film, infrared filter film) X3 is applied to the outer surface of the reflector 68 as a radiant heat blocking section that reflects radiant heat. The optical film X3 reflects the radiant heat from the space 12, preventing the heat from being transferred to the reflector 68. For example, the optical film X3 may be made of frosted glass, a material that causes diffuse reflection like quartz, or a metal that is foamed to scatter light or has a different refractive index to prevent light from passing through.

In addition, instead of applying an infrared filter film (optical filter film) to the surface of the reflector 68, for example, it is also possible to form an infrared filter film from a separate material and cover or wrap the surface of the reflector 68.

In another embodiment, at least a portion of the reflector 68 may be made of opaque quartz X2. This allows the reflector 68 to have a radiant heat blocking section.

In addition, instead of constructing at least a portion of the reflector 68 from opaque quartz X2, it is also possible to, for example, create a radiant heat reflecting member made of opaque quartz X2 as a separate member and cover or wrap the outer surface of the reflector 68 with the radiant heat reflecting member.

The effect of the metal film, optical film, and opaque quartz applied to the surface of the reflector 68 is the same radiant heat blocking effect as that described above when they are applied to the heat source 22, so a detailed description will be omitted here.

[Second embodiment]
The high-temperature resistant vacuum gate valve and the radiant heat blocking method of the high-temperature resistant vacuum gate valve of the second embodiment are configured to have a refrigerant flow (circulate) inside the high-temperature resistant vacuum gate valve. Note that the same reference numerals are used to designate the same components as those of the first embodiment, and the description thereof will be omitted as appropriate.

As shown in FIG. 18, a flow path 74 through which a refrigerant such as cooling water flows is arranged inside the valve body 56. Similarly, flow paths 74 through which a refrigerant such as cooling water flows are arranged in the outer tube 58 of the valve box 54 and in the storage wall 76 near the retreated portion. As the refrigerant flows (circulates) through the flow path 74, the valve body 56 and the valve box 54 are cooled and maintained at a temperature below the melting point of the sealing material 62.

The refrigerant is, for example, cooling water.

As shown in FIG. 19, a metal film (metal reflective film) X1 is applied to the surface of the valve body 56, which is the exposed surface exposed to the space 12, as a radiant heat blocking section that reflects radiant heat. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high thermal reflectivity and do not easily absorb heat, either alone or as a mixture of any other material. The metal film X1 reflects the radiant heat from the space 12, preventing the heat from being transferred to the valve body 56.

In addition, instead of applying a metal film (metal reflective film) X1 to the valve body 56, for example, it is also possible to form the metal film X1 as a separate member and attach it to the exposed surface of the valve body 56.

In another embodiment, an optical film (optical filter film, infrared filter film) X3 is applied to the exposed surface of the valve body 56 as a radiant heat blocking section that reflects radiant heat. The optical film X3 reflects the radiant heat from the space 12, preventing the heat from being transferred to the valve body 56. For example, the optical film X3 may be made of frosted glass, a material that causes diffuse reflection like quartz, or a metal that is foamed to scatter light or has a different refractive index to prevent light from passing through.

In addition, instead of applying an infrared filter film (optical filter film) to the exposed surface of the valve body 56, for example, it is also possible to form an infrared filter film from a separate material and attach it to the exposed surface of the valve body 56.

In another embodiment, at least a portion of the exposed surface of the valve body 56 may be made of opaque quartz X2. This allows a radiant heat blocking portion to be formed on the exposed surface of the valve body 56.

In addition, instead of constructing at least a portion of the exposed surface of the valve body 56 from opaque quartz X2, it is also possible to, for example, create a radiant heat reflecting member made of opaque quartz X2 as a separate member and attach the radiant heat reflecting member to the exposed surface of the valve body 56.

Similarly, a metal film (metal reflective film) X1 is applied to the inner wall 60 of the outer cylinder 58 of the valve box 62, where the seal material 62 abuts, as a radiant heat blocking section that reflects radiant heat. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have high thermal reflectivity and do not easily absorb heat, either alone or as a mixture of any other material. The metal film X1 reflects the radiant heat from the space 12, preventing it from being transferred to the outer cylinder 58.

In addition, as an alternative to applying a metal film (metal reflective film) X1 to the outer cylinder 58, for example, it is also possible to form the metal film X1 as a separate member and attach it to the inner wall 60 of the outer cylinder 58 of the valve box 54 at a location where the seal material 62 abuts.

In addition, an optical film (optical filter film, infrared filter film) X3 is applied to the inner wall 60 of the outer tube 58 of the valve box 54, where the sealant 62 abuts, as a radiant heat blocking section that reflects radiant heat. The optical film X3 reflects the radiant heat from the space 12, preventing the heat from being transferred to the outer tube 58. For example, frosted glass, a material that causes diffuse reflection like quartz, or a metal that is foamed to scatter light or change the refractive index to prevent light from passing through may be used as the optical film X3.

In addition, as a configuration other than applying an infrared filter film (optical filter film) to the portion of the inner wall 60 of the outer tube 58 of the valve box 54 where the sealing material 62 abuts, it is also possible to form an infrared filter film from a separate member and attach it to the portion of the inner wall 60 of the outer tube 58 of the valve box 54 where the sealing material 62 abuts.

In another embodiment, at least a portion of the inner wall 60 of the outer tube 58 of the valve box 54, where the sealant 62 abuts, may be made of opaque quartz X2. This allows a radiant heat blocking portion to be formed in the inner wall 60 of the outer tube 58 of the valve box 54, where the sealant 62 abuts.

In addition, instead of using opaque quartz X2 for at least a portion of the inner wall 60 of the outer tube 58 of the valve box 54 where the sealing material 62 comes into contact, it is also possible to create a radiant heat reflecting member made of opaque quartz X2 as a separate member and attach the radiant heat reflecting member to the inner wall 60 of the outer tube 58 of the valve box 54 where the sealing material 62 comes into contact.

As described above, the temperature of the portion of the valve body 56 and the outer cylinder 58 of the valve box 54 where the sealing material 62 comes into contact can be controlled to be below the melting point of the sealing material 62. In other words, the heat transfer effect from the valve body 56 and the outer cylinder to the sealing material 62 arranged at the tip of the valve body 56 is weakened, and the temperature rise of the sealing material 62 is suppressed. As a result, the temperature of the sealing material 62 becomes below the melting point, and the sealing material 62 can be prevented from melting or disappearing.

Even if the valve body 56 and the valve box 54 are not provided with a flow path 74 through which a refrigerant such as cooling water flows, the valve body 56 and the valve box 54 may be formed with a radiant heat blocking portion that reflects radiant heat.

Even if the valve body 56 and the valve box 54 are not provided with a radiant heat blocking portion that reflects radiant heat, a configuration may be adopted in which a flow path 74 through which a refrigerant such as cooling water flows is arranged in the valve body 56 and the valve box 54.

The sealing material 62 may also contain a metal (not shown). By including a metal in the sealing material 62, the thermal conductivity of the sealing material 62 itself is improved. In particular, by including a metal in the material forming the sealing material 62, when the sealing material 62 comes into contact with the inner wall 60 of the outer tube 58 of the valve box 54, the thermal conductivity between the sealing material 62 and the outer tube 58 of the valve box 54, and between the sealing material 62 and the valve body 56 is increased, and the amount of heat accumulated in the sealing material 62 can be quickly transferred to the valve box 54 and the valve body 56. In addition, in a configuration in which metal is exposed on the surface of the sealing material 62, the heat dissipation from the sealing material 62 to the air proceeds smoothly due to the effect of the so-called cooling fin. As a result, the temperature of the sealing material 62 can be maintained below the melting point, so that the sealing material 62 does not melt or disappear.

The above embodiment is merely one example that embodies the technical concept of the present invention. Naturally, the present invention is not limited to this embodiment, but includes all aspects that utilize the technical concept of the present invention.

10 Semiconductor processing device 11 Carry-out port 12 Space portion 14 Base portion 16 Lid portion (support portion)
Reference Signs List 18 Peripheral wall portion 20 Lid portion main body 22 Heat source 22H Quartz heater 23A First heater portion 23B Second heater portion 24 Gap portion 24N Non-light-emitting portion 25B Light-emitting portion 26 Reflection treatment plate 28 Cooling liquid flow path 30 Mounting flange 32 Recess 34 Through hole 36 Airtight member 38 Compression ring 40 Retaining flange 42 Current introduction portion 50 High-temperature compatible vacuum gate valve 52 Passage port 54 Valve box 56 Valve body 58 Outer cylinder 60 Inner wall 62 Sealing material 64 Retraction portion 66 Recess 68 Reflection plate 70 Gap 72 Arm member 74 Flow path X1 Metal film X2 Opaque quartz X3 Optical film

Claims (6)

A semiconductor processing apparatus having a space for processing a workpiece ,
The space portion has a heat source holding mechanism in which a heat source made of a light-transmitting member is supported by a support portion via an airtight member, and a radiant heat blocking portion that blocks radiant heat is provided at a contact portion of the heat source with the airtight member on an optical path along which light is irradiated to the airtight member,
The space is provided with an outlet through which the object to be processed can pass ,
The discharge port is provided with a high-temperature compatible vacuum gate valve ,
The high-temperature-compatible vacuum gate valve in the semiconductor processing apparatus has a valve body, and a sealing material provided on the valve body to maintain the space airtight, and a radiant heat shielding portion is provided on the surface of the valve body exposed on the side of the space to shield against radiant heat. The semiconductor processing apparatus according to claim 1 , wherein the radiant heat shield is a reflector that covers at least a portion of the valve body to reflect the radiant heat. The semiconductor processing apparatus of claim 2 , wherein the reflector is made of a ceramic material. The semiconductor processing apparatus according to claim 2 , wherein the reflector plate is provided with a metal film for reflecting the radiant heat. The semiconductor processing apparatus according to claim 2 , wherein the reflecting plate is provided with an optical film for reflecting the radiant heat. The semiconductor processing apparatus according to claim 2 , wherein the reflector is made of opaque quartz that reflects the radiant heat.

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