JP7492666B2 - Light emitting element - Google Patents

Light emitting element Download PDF

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JP7492666B2
JP7492666B2 JP2022010696A JP2022010696A JP7492666B2 JP 7492666 B2 JP7492666 B2 JP 7492666B2 JP 2022010696 A JP2022010696 A JP 2022010696A JP 2022010696 A JP2022010696 A JP 2022010696A JP 7492666 B2 JP7492666 B2 JP 7492666B2
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semiconductor layer
insulating film
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refractive index
electrode
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JP2023109274A (en
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拡二 藤本
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Nichia Corp
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Description

実施形態は、発光素子に関する。 The embodiment relates to a light-emitting element.

発光素子として、ｐ型半導体層、活性層及びｎ型半導体層を積層させた発光ダイオード（Light Emitting Diode：ＬＥＤ）が開発されている。このような発光素子においては、ｐ型半導体層及びｎ型半導体層のそれぞれに接続された電極が発光素子の光取出面に配置される場合がある。このような場合においても、光取出効率の向上が望まれている。 Light-emitting diodes (LEDs) have been developed as light-emitting elements, in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked. In such light-emitting elements, electrodes connected to the p-type semiconductor layer and the n-type semiconductor layer may be arranged on the light extraction surface of the light-emitting element. Even in such cases, there is a demand for improving the light extraction efficiency.

特開２０１１－１００８３９号公報JP 2011-100839 A

本発明の実施形態は、上述の問題点に鑑みてなされたものであって、光取出効率が高い発光素子を提供することを目的とする。 The embodiment of the present invention was made in consideration of the above-mentioned problems, and aims to provide a light-emitting element with high light extraction efficiency.

本発明の実施形態に係る発光素子は、第１導電型の第１半導体層と、前記第１半導体層の上面の一部に配置され、前記第１半導体層と電気的に接続された第１電極と、前記第１半導体層の上面において前記第１電極が配置されていない領域に配置された活性層と、前記活性層の上面に配置された第２導電型の第２半導体層と、前記第２半導体層の上面の一部に配置された第１絶縁膜と、前記第２半導体層の上面であって前記第１絶縁膜が配置されていない領域の一部に配置された第２絶縁膜と、前記第２半導体層の上面に配置され、前記第２半導体層と電気的に接続され、前記第１絶縁膜及び前記第２絶縁膜を覆う透光性導電層と、前記透光性導電層の上面の一部に配置され、前記第２半導体層と電気的に接続された第２電極と、を備える。断面視において、前記第１絶縁膜は、前記第２半導体層と前記第２電極との間に配置される。前記第２半導体層の屈折率と前記第２絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも小さい。前記第２半導体層の屈折率と前記第１絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも大きい。 A light-emitting element according to an embodiment of the present invention includes a first semiconductor layer of a first conductivity type, a first electrode disposed on a portion of the upper surface of the first semiconductor layer and electrically connected to the first semiconductor layer, an active layer disposed in a region of the upper surface of the first semiconductor layer where the first electrode is not disposed, a second semiconductor layer of a second conductivity type disposed on the upper surface of the active layer, a first insulating film disposed on a portion of the upper surface of the second semiconductor layer, a second insulating film disposed on a portion of the upper surface of the second semiconductor layer where the first insulating film is not disposed, a translucent conductive layer disposed on the upper surface of the second semiconductor layer, electrically connected to the second semiconductor layer, and covering the first insulating film and the second insulating film, and a second electrode disposed on a portion of the upper surface of the translucent conductive layer and electrically connected to the second semiconductor layer. In a cross-sectional view, the first insulating film is disposed between the second semiconductor layer and the second electrode. The absolute value of the difference between the refractive index of the second semiconductor layer and the refractive index of the second insulating film is smaller than the absolute value of the difference between the refractive index of the second semiconductor layer and the refractive index of the translucent conductive layer. The absolute value of the difference between the refractive index of the second semiconductor layer and the refractive index of the first insulating film is greater than the absolute value of the difference between the refractive index of the second semiconductor layer and the refractive index of the translucent conductive layer.

本発明の実施形態によれば、光取出効率が高い発光素子を実現できる。 According to an embodiment of the present invention, a light-emitting element with high light extraction efficiency can be realized.

第１の実施形態に係る発光素子を示す上面図である。FIG. 2 is a top view showing the light emitting element according to the first embodiment. 図１に示すII－II線による断面図である。2 is a cross-sectional view taken along line II-II shown in FIG. 図１に示すIII－III線による断面図である。3 is a cross-sectional view taken along line III-III shown in FIG. 第１の実施形態に係る発光素子の動作を示す模式的な断面図である。5A to 5C are schematic cross-sectional views showing the operation of the light-emitting element according to the first embodiment. 比較例に係る発光素子を示す上面図である。FIG. 11 is a top view showing a light emitting element according to a comparative example. 図５のVI－VI線による断面図である。6 is a cross-sectional view taken along line VI-VI in FIG. 5. 比較例に係る発光素子の動作を示す模式的な断面図である。5A to 5C are schematic cross-sectional views showing the operation of a light-emitting element according to a comparative example. 第１の実施形態の第１の変形例に係る発光素子を示す上面図である。FIG. 4 is a top view showing a light-emitting element according to a first modified example of the first embodiment. 第１の実施形態の第２の変形例に係る発光素子を示す上面図である。FIG. 4 is a top view showing a light-emitting element according to a second modified example of the first embodiment. 第１の実施形態の第３の変形例に係る発光素子を示す上面図である。FIG. 11 is a top view showing a light-emitting element according to a third modified example of the first embodiment. 第２の実施形態に係る発光素子を示す上面図である。FIG. 11 is a top view showing a light-emitting element according to a second embodiment. 第２の実施形態の変形例に係る発光素子を示す上面図である。FIG. 13 is a top view showing a light-emitting element according to a modified example of the second embodiment. 第３の実施形態に係る発光素子を示す上面図である。FIG. 13 is a top view showing a light-emitting element according to a third embodiment. 第４の実施形態に係る発光素子を示す上面図である。FIG. 13 is a top view showing a light-emitting element according to a fourth embodiment. 第５の実施形態に係る発光素子を示す上面図である。FIG. 13 is a top view showing a light-emitting element according to a fifth embodiment.

＜第１の実施形態＞
図１は、本実施形態に係る発光素子を示す上面図である。
図２は、図１に示すII－II線による断面図である。
図３は、図１に示すIII－III線による断面図である。
なお、各図は模式的なものであり、適宜簡略化及び強調されている。例えば、一部の構成要素は、実際よりも少なく且つ大きく描かれている。また、図間において、構成要素の数、位置及び寸法比は必ずしも整合していない。後述する他の図においても同様である。また、図を見やすくするために、図１において、第１絶縁膜４０及び第２絶縁膜５０にドットを付している。後述する他の上面図についても同様である。 First Embodiment
FIG. 1 is a top view showing a light emitting device according to the present embodiment.
FIG. 2 is a cross-sectional view taken along line II-II shown in FIG.
FIG. 3 is a cross-sectional view taken along line III-III shown in FIG.
Note that each figure is schematic and appropriately simplified and emphasized. For example, some components are drawn fewer and larger than in reality. Furthermore, the number, positions, and dimensional ratios of components are not necessarily consistent between the figures. This also applies to other figures described later. Also, in order to make the figures easier to see, the first insulating film 40 and the second insulating film 50 are marked with dots in FIG. 1. This also applies to other top views described later.

先ず、本実施形態に係る発光素子１の構成を概略的に説明する。
発光素子１は、ｎ型の第１半導体層１１と、第１半導体層１１の上面の一部に配置され、第１半導体層１１と電気的に接続された第１電極２０と、第１半導体層１１の上面において第１電極２０が配置されていない領域に配置された活性層１２と、活性層１２の上面に配置されたｐ型の第２半導体層１３と、第２半導体層１３の上面１３ａの一部に配置された第１絶縁膜４０と、第２半導体層１３の上面１３ａであって第１絶縁膜４０が配置されていない領域の一部に配置された第２絶縁膜５０と、第２半導体層１３の上面１３ａに配置され、第２半導体層１３と電気的に接続され、第１絶縁膜４０及び第２絶縁膜５０を覆う透光性導電層６０と、透光性導電層６０の上面の一部に配置され、第２半導体層１３と電気的に接続された第２電極３０と、を備える。断面視において、第１絶縁膜４０は、第２半導体層１３と第２電極３０との間に配置される。第２半導体層１３の屈折率と第２絶縁膜５０の屈折率との差の絶対値は、第２半導体層１３の屈折率と透光性導電層６０の屈折率との差の絶対値よりも小さい。第２半導体層１３の屈折率と第１絶縁膜４０の屈折率との差の絶対値は、第２半導体層１３の屈折率と透光性導電層６０の屈折率との差の絶対値よりも大きい。 First, the configuration of the light-emitting element 1 according to this embodiment will be roughly described.
The light-emitting element 1 includes an n-type first semiconductor layer 11, a first electrode 20 disposed on a portion of the upper surface of the first semiconductor layer 11 and electrically connected to the first semiconductor layer 11, an active layer 12 disposed in a region of the upper surface of the first semiconductor layer 11 where the first electrode 20 is not disposed, a p-type second semiconductor layer 13 disposed on the upper surface of the active layer 12, a first insulating film 40 disposed on a portion of the upper surface 13a of the second semiconductor layer 13, a second insulating film 50 disposed on a portion of the upper surface 13a of the second semiconductor layer 13 where the first insulating film 40 is not disposed, a light-transmitting conductive layer 60 disposed on the upper surface 13a of the second semiconductor layer 13, electrically connected to the second semiconductor layer 13, and covering the first insulating film 40 and the second insulating film 50, and a second electrode 30 disposed on a portion of the upper surface of the light-transmitting conductive layer 60 and electrically connected to the second semiconductor layer 13. In a cross-sectional view, the first insulating film 40 is disposed between the second semiconductor layer 13 and the second electrode 30. The absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the second insulating film 50 is smaller than the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the translucent conductive layer 60. The absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the first insulating film 40 is larger than the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the translucent conductive layer 60.

以下、発光素子１の構成を詳細に説明する。
図１～図３に示すように、発光素子１は、基板１００上に配置されている。基板１００の種類は特に限定されない。基板１００は、例えば、半導体構造体１０を結晶成長させるためのサファイア基板である。発光素子１の形状は概ね直方体である。発光素子１は、半導体構造体１０、第１電極２０、第２電極３０、第１絶縁膜４０、第２絶縁膜５０、及び、透光性導電層６０を有している。 The configuration of the light-emitting element 1 will now be described in detail.
1 to 3, the light-emitting element 1 is disposed on a substrate 100. The type of the substrate 100 is not particularly limited. The substrate 100 is, for example, a sapphire substrate for crystal growth of the semiconductor structure 10. The shape of the light-emitting element 1 is generally a rectangular parallelepiped. The light-emitting element 1 has the semiconductor structure 10, a first electrode 20, a second electrode 30, a first insulating film 40, a second insulating film 50, and a light-transmitting conductive layer 60.

以下、本明細書においては、説明の便宜上、ＸＹＺ直交座標系を採用する。発光素子１の長手方向を「第１方向Ｘ」とし、発光素子１の短手方向を「第２方向Ｙ」とし、第１方向Ｘ及び第２方向Ｙに直交する方向を「第３方向Ｚ」とする。第３方向Ｚのうち、基板１００から発光素子１に向かう方向（＋Ｚ）を「上」ともいい、その逆方向（－Ｚ）を「下」ともいうが、この表現も便宜的なものであり、重力の方向とは無関係である。また、本明細書において「上面視」とは上から見ることをいい、「断面視」とは第３方向Ｚを含む断面を見ることをいう。 For the sake of convenience, the present specification will adopt an XYZ Cartesian coordinate system. The longitudinal direction of the light-emitting element 1 is the "first direction X", the lateral direction of the light-emitting element 1 is the "second direction Y", and the direction perpendicular to the first direction X and the second direction Y is the "third direction Z". Within the third direction Z, the direction from the substrate 100 toward the light-emitting element 1 (+Z) is also referred to as "up", and the opposite direction (-Z) is also referred to as "down", but these expressions are also for convenience and are unrelated to the direction of gravity. In addition, in this specification, "top view" refers to a view from above, and "cross-sectional view" refers to a view of a cross section including the third direction Z.

半導体構造体１０は、基板１００側から順に、第１半導体層１１、活性層１２、及び、第２半導体層１３を有する。第１半導体層１１の導電型は第１導電型であり、例えば、ｎ型である。第２半導体層１３の導電型は第２導電型であり、例えば、ｐ型である。なお、第１半導体層１１がｐ型であり、第２半導体層１３がｎ型であってもよい。 The semiconductor structure 10 has, in order from the substrate 100 side, a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13. The first semiconductor layer 11 has a first conductivity type, e.g., n-type. The second semiconductor layer 13 has a second conductivity type, e.g., p-type. Note that the first semiconductor layer 11 may be p-type and the second semiconductor layer 13 may be n-type.

活性層１２及び第２半導体層１３には開口部１４が配置されている。開口部１４の底部には第１半導体層１１が露出している。第１半導体層１１の上面のうち開口部１４の底部に露出した領域には、第１電極２０が配置されている。第１電極２０は、第１半導体層１１の上面の一部に配置されている。活性層１２は、第１半導体層１１の上面において第１電極２０が配置されていない領域に配置されている。第２半導体層１３は、活性層１２の上面に配置されている。開口部１４を除けば、上面視で、第１半導体層１１、活性層１２及び第２半導体層１３の形状は矩形である。 An opening 14 is arranged in the active layer 12 and the second semiconductor layer 13. The first semiconductor layer 11 is exposed at the bottom of the opening 14. A first electrode 20 is arranged in a region of the upper surface of the first semiconductor layer 11 exposed at the bottom of the opening 14. The first electrode 20 is arranged on a part of the upper surface of the first semiconductor layer 11. The active layer 12 is arranged in a region of the upper surface of the first semiconductor layer 11 where the first electrode 20 is not arranged. The second semiconductor layer 13 is arranged on the upper surface of the active layer 12. Except for the opening 14, the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13 are rectangular in shape when viewed from above.

第１電極２０は、導電性材料からなる。第１電極２０は、第１パッド部２１と、第１パッド部２１から延伸する第１延伸部２２とを有する。第１パッド部２１は、例えば、第１方向Ｘの＋Ｘ側であって第２方向Ｙの中央部に配置されている。上面視で、第１パッド部２１の形状は例えば円形である。本実施形態において、第１延伸部２２は、２本配置されている。２本の第１延伸部２２は、第１パッド部２１から第２方向Ｙの両側に延び、弧を描いて延伸方向が連続的に変化し、第１方向Ｘに沿った直線部を有している。 The first electrode 20 is made of a conductive material. The first electrode 20 has a first pad portion 21 and a first extension portion 22 extending from the first pad portion 21. The first pad portion 21 is disposed, for example, on the +X side of the first direction X and in the center of the second direction Y. When viewed from above, the shape of the first pad portion 21 is, for example, circular. In this embodiment, two first extension portions 22 are disposed. The two first extension portions 22 extend from the first pad portion 21 to both sides in the second direction Y, and the extension direction changes continuously in an arc, and have a straight portion along the first direction X.

断面視で、第１半導体層１１と第１パッド部２１との間には、第１絶縁膜４０の第１部分４１が配置されている。上面視で、第１部分４１の形状は例えば円形である。上面視において、第１部分４１の直径は、第１電極２０の第１パッド部２１の直径よりも大きい。第１パッド部２１は第１部分４１上に配置されている。第１半導体層１１と第１延伸部２２との間には、第１絶縁膜４０は配置されておらず、第１延伸部２２は第１半導体層１１に接している。第１延伸部２２が第１半導体層１１に接することにより、第１電極２０は第１半導体層１１に電気的に接続されている。 In a cross-sectional view, a first portion 41 of a first insulating film 40 is disposed between the first semiconductor layer 11 and the first pad portion 21. In a top view, the shape of the first portion 41 is, for example, circular. In a top view, the diameter of the first portion 41 is larger than the diameter of the first pad portion 21 of the first electrode 20. The first pad portion 21 is disposed on the first portion 41. The first insulating film 40 is not disposed between the first semiconductor layer 11 and the first extension portion 22, and the first extension portion 22 is in contact with the first semiconductor layer 11. The first electrode 20 is electrically connected to the first semiconductor layer 11 by the first extension portion 22 being in contact with the first semiconductor layer 11.

第２半導体層１３の上面１３ａの一部には、第１絶縁膜４０の第２部分４２、第３部分４３及び第４部分４４、並びに第２絶縁膜５０が配置されている。第２絶縁膜５０の材料は第１絶縁膜４０の材料とは異なる。第１絶縁膜４０の膜厚は第２絶縁膜５０の膜厚よりも厚い。第２絶縁膜５０は、第２半導体層１３の上面１３ａであって第１絶縁膜４０が配置されていない領域の一部に配置されている。第１絶縁膜４０及び第２絶縁膜５０の平面配置については後述する。 The second portion 42, the third portion 43, and the fourth portion 44 of the first insulating film 40, and the second insulating film 50 are arranged on a portion of the upper surface 13a of the second semiconductor layer 13. The material of the second insulating film 50 is different from the material of the first insulating film 40. The film thickness of the first insulating film 40 is thicker than the film thickness of the second insulating film 50. The second insulating film 50 is arranged on a portion of the region of the upper surface 13a of the second semiconductor layer 13 where the first insulating film 40 is not arranged. The planar arrangement of the first insulating film 40 and the second insulating film 50 will be described later.

第２半導体層１３の上面１３ａには、透光性導電層６０が配置されている。透光性導電層６０は開口部１４内には配置されていない。透光性導電層６０は、透光性であり且つ導電性である材料を用いることができる。透光性導電層６０は、第２半導体層１３に配置された第１絶縁膜４０及び第２絶縁膜５０を覆い、第２半導体層１３の上面１３ａにおける第１絶縁膜４０及び第２絶縁膜５０が配置されていない領域に接している。これにより、透光性導電層６０は第２半導体層１３に電気的に接続されている。断面視で、第１絶縁膜４０の第２部分４２、第３部分４３及び第４部分４４、並びに、第２絶縁膜５０は、第２半導体層１３と透光性導電層６０との間に配置されている。第１絶縁膜４０及び第２絶縁膜５０は、第２半導体層１３及び透光性導電層６０に接している。 A light-transmitting conductive layer 60 is disposed on the upper surface 13a of the second semiconductor layer 13. The light-transmitting conductive layer 60 is not disposed in the opening 14. The light-transmitting conductive layer 60 may be made of a material that is light-transmitting and conductive. The light-transmitting conductive layer 60 covers the first insulating film 40 and the second insulating film 50 disposed on the second semiconductor layer 13, and contacts the area on the upper surface 13a of the second semiconductor layer 13 where the first insulating film 40 and the second insulating film 50 are not disposed. As a result, the light-transmitting conductive layer 60 is electrically connected to the second semiconductor layer 13. In a cross-sectional view, the second portion 42, the third portion 43, and the fourth portion 44 of the first insulating film 40, and the second insulating film 50 are disposed between the second semiconductor layer 13 and the light-transmitting conductive layer 60. The first insulating film 40 and the second insulating film 50 contact the second semiconductor layer 13 and the light-transmitting conductive layer 60.

透光性導電層６０の上面の一部には、第２電極３０が配置されている。第２電極３０は、導電性材料からなる。第２電極３０は、第２パッド部３１と、第２パッド部３１から延伸する第２延伸部３２、３３とを有する。本実施形態では、第２延伸部３２、３３は、例えば３本配置されている。第２パッド部３１は、例えば、第１方向Ｘの－Ｘ側であって第２方向Ｙの中央部に配置されている。上面視で、第２パッド部３１の形状は例えば円形である。 A second electrode 30 is disposed on a portion of the upper surface of the translucent conductive layer 60. The second electrode 30 is made of a conductive material. The second electrode 30 has a second pad portion 31 and second extension portions 32, 33 extending from the second pad portion 31. In this embodiment, for example, three second extension portions 32, 33 are disposed. The second pad portion 31 is disposed, for example, on the -X side of the first direction X and in the center in the second direction Y. When viewed from above, the shape of the second pad portion 31 is, for example, circular.

１本の第２延伸部３２は、第２パッド部３１から第１方向Ｘの＋Ｘ側に直線状に延びている。２本の第２延伸部３３は、第２パッド部３１から第２方向Ｙの両側に延び、弧を描いて延伸方向が連続的に変化し、第１方向Ｘに沿った直線部を有している。また、第２延伸部３３は、第１方向Ｘに沿って延び、弧を描いて延伸方向が連続的に変化し、第２方向Ｙに沿った直線部を有している。第２延伸部３３の一部は、第１パッド部２１よりも第１方向Ｘの＋Ｘ側に位置している。第１延伸部２２の直線部は、第２方向Ｙにおいて、第２延伸部３２と第２延伸部３３との間に配置されている。 The second extension portion 32 extends linearly from the second pad portion 31 toward the +X side of the first direction X. The second extension portions 33 extend from the second pad portion 31 to both sides in the second direction Y, and have a straight portion along the first direction X, with the extension direction continuously changing in an arc. The second extension portion 33 extends along the first direction X, and has a straight portion along the second direction Y, with the extension direction continuously changing in an arc. A part of the second extension portion 33 is located on the +X side of the first direction X relative to the first pad portion 21. The straight portion of the first extension portion 22 is disposed between the second extension portion 32 and the second extension portion 33 in the second direction Y.

上面視において、第２電極３０の第２延伸部３２は、第２方向Ｙにおいて、第２半導体層１３の上面１３ａのうち第１電極２０の２本の第１延伸部２２の間に位置する第１領域Ｒ１に配置されている。また、上面視において、第１電極２０の第１パッド部２１と第１延伸部２２は、第２方向Ｙにおいて、第２半導体層１３の上面１３ａのうち第２電極３０の２本の第２延伸部３３の間に位置する第２領域Ｒ２に配置されている。第１領域Ｒ１は第２領域Ｒ２の一部である。 In top view, the second extension portion 32 of the second electrode 30 is disposed in a first region R1 located between the two first extension portions 22 of the first electrode 20 on the upper surface 13a of the second semiconductor layer 13 in the second direction Y. Also, in top view, the first pad portion 21 and the first extension portion 22 of the first electrode 20 are disposed in a second region R2 located between the two second extension portions 33 of the second electrode 30 on the upper surface 13a of the second semiconductor layer 13 in the second direction Y. The first region R1 is a part of the second region R2.

第２パッド部３１、第２延伸部３２及び３３は、透光性導電層６０に接している。これにより、第２電極３０は透光性導電層６０を介して第２半導体層１３に電気的に接続されている。 The second pad portion 31 and the second extension portions 32 and 33 are in contact with the translucent conductive layer 60. As a result, the second electrode 30 is electrically connected to the second semiconductor layer 13 via the translucent conductive layer 60.

第１絶縁膜４０の詳細構造について説明する。
第１絶縁膜４０は、第１部分４１、第２部分４２、第３部分４３、及び第４部分４４を有する。第２部分４２、第３部分４３、及び第４部分４４は、第２半導体層１３の上面１３ａに配置されている。断面視で、第２部分４２は、第２半導体層１３と第２パッド部３１との間に配置されている。上面視で、第２部分４２の形状は例えば円形である。第２部分４２の直径は第２パッド部３１の直径よりも大きい。第２パッド部３１は第２部分４２上に配置されている。 The detailed structure of the first insulating film 40 will be described.
The first insulating film 40 has a first portion 41, a second portion 42, a third portion 43, and a fourth portion 44. The second portion 42, the third portion 43, and the fourth portion 44 are disposed on the upper surface 13a of the second semiconductor layer 13. In a cross-sectional view, the second portion 42 is disposed between the second semiconductor layer 13 and the second pad portion 31. In a top view, the shape of the second portion 42 is, for example, circular. The diameter of the second portion 42 is larger than the diameter of the second pad portion 31. The second pad portion 31 is disposed on the second portion 42.

断面視で、第３部分４３は、第２半導体層１３と第２延伸部３２との間に配置されている。上面視で、第３部分４３は、第１方向Ｘに沿った直線部を有する。第２延伸部３２は第３部分４３上に配置されている。第２方向Ｙにおいて、第３部分４３の幅は第２延伸部３２の幅よりも大きい。また、断面視で、第４部分４４は、第２半導体層１３と第２延伸部３３との間に配置されている。上面視で、第４部分４４は、第１方向Ｘに沿った直線部を有する。第２方向Ｙにおいて、第４部分４４の幅は第２延伸部３３の幅よりも大きい。第２延伸部３３は第４部分４４上に配置されている。 In a cross-sectional view, the third portion 43 is disposed between the second semiconductor layer 13 and the second extension portion 32. In a top view, the third portion 43 has a straight portion along the first direction X. The second extension portion 32 is disposed on the third portion 43. In the second direction Y, the width of the third portion 43 is greater than the width of the second extension portion 32. In a cross-sectional view, the fourth portion 44 is disposed between the second semiconductor layer 13 and the second extension portion 33. In a top view, the fourth portion 44 has a straight portion along the first direction X. In the second direction Y, the width of the fourth portion 44 is greater than the width of the second extension portion 33. The second extension portion 33 is disposed on the fourth portion 44.

このように、第２半導体層１３と第２電極３０との間には、第１絶縁膜４０の第２部分４２、第３部分４３及び第４部分４４が配置されている。そして、上面視において、第２電極３０は、第２半導体層１３の上面１３ａにおける第１絶縁膜４０が配置された領域内に配置されている。これにより、第２電極３０による光吸収を低減し、光取出効率を高くすることができる。 In this manner, the second portion 42, the third portion 43, and the fourth portion 44 of the first insulating film 40 are disposed between the second semiconductor layer 13 and the second electrode 30. In addition, in a top view, the second electrode 30 is disposed within the region on the upper surface 13a of the second semiconductor layer 13 where the first insulating film 40 is disposed. This reduces light absorption by the second electrode 30 and increases the light extraction efficiency.

第２絶縁膜５０の詳細構造について説明する。
第２絶縁膜５０は、例えば、複数のドット部分を有する。ドット部分は例えば相互に離隔している。上面視で、各ドット部分の形状は例えば円形状、楕円形状である。但し、これには限定されず、上面視で、各ドット部分の形状は、例えば多角形であってもよく、例えば三角形状又は四角形状であってもよい。また、隣り合うドット部分同士が連結していてもよい。例えば、第２絶縁膜５０の複数のドット部分は、第１方向Ｘ及び第２方向Ｙに沿ってマトリクス状に配列されている。但し、これには限定されず、上面視で、第２絶縁膜５０の複数のドット部分は、例えば同心円状に配置されていてもよい。又は、第２絶縁膜５０は格子状に配置してもよい。 The detailed structure of the second insulating film 50 will be described.
The second insulating film 50 has, for example, a plurality of dot portions. The dot portions are, for example, spaced apart from each other. In top view, the shape of each dot portion is, for example, a circular shape or an elliptical shape. However, this is not limited thereto, and in top view, the shape of each dot portion may be, for example, a polygonal shape, for example, a triangular shape or a rectangular shape. In addition, adjacent dot portions may be connected to each other. For example, the plurality of dot portions of the second insulating film 50 are arranged in a matrix shape along the first direction X and the second direction Y. However, this is not limited thereto, and in top view, the plurality of dot portions of the second insulating film 50 may be arranged in a concentric circle shape, for example. Alternatively, the second insulating film 50 may be arranged in a lattice shape.

本実施形態において、第２絶縁膜５０は、第２半導体層１３の上面１３ａにおける第１絶縁膜４０及び開口部１４が配置されていない領域に配置されている。 In this embodiment, the second insulating film 50 is disposed in an area of the upper surface 13a of the second semiconductor layer 13 where the first insulating film 40 and the opening 14 are not disposed.

各部材の材料及び寸法の一例を説明する。
半導体構造体１０は、例えば窒化ガリウム（ＧａＮ）、窒化インジウムガリウム（ＩｎＧａＮ）等の窒化物半導体を含む。第１電極２０及び第２電極３０は導電性材料からなり、例えば金属層が複数された多層膜である。第１電極２０は、例えば、ニッケル（Ｎｉ）、ロジウム（Ｒｈ）、銅（Ｃｕ）、金（Ａｕ）、チタン（Ｔｉ）、クロム（Ｃｒ）、タングステン（Ｗ）又はこれらの金属を含む合金を用いることができる。第２方向Ｙにおいて、第１電極２０の第１延伸部２２の幅、並びに、第２電極３０の第２延伸部３２、３３の幅は、それぞれ例えば２μｍ以上５μｍ以下である。 An example of the material and dimensions of each member will be described below.
The semiconductor structure 10 includes a nitride semiconductor such as gallium nitride (GaN) or indium gallium nitride (InGaN). The first electrode 20 and the second electrode 30 are made of a conductive material, and are multilayer films having a plurality of metal layers. The first electrode 20 can be made of, for example, nickel (Ni), rhodium (Rh), copper (Cu), gold (Au), titanium (Ti), chromium (Cr), tungsten (W), or an alloy containing these metals. In the second direction Y, the width of the first extension 22 of the first electrode 20 and the width of the second extensions 32 and 33 of the second electrode 30 are, for example, 2 μm or more and 5 μm or less.

第１絶縁膜４０は、例えば、酸窒化シリコン（ＳｉＯＮ）、酸化シリコン（ＳｉＯ２）、酸化アルミニウム（Ａｌ２Ｏ３）、酸化チタン（ＴｉＯ）又は酸化ニオブ（Ｎｂ２Ｏ５）からなり、例えば酸窒化シリコン（ＳｉＯＮ）からなる。第１絶縁膜４０の厚さは、例えば５０ｎｍ以上５００ｎｍ以下である。第１絶縁膜４０の厚さは、例えば２７０ｎｍである。第２方向Ｙにおいて、第１絶縁膜４０の第３部分４３の幅及び第４部分４４の幅は、例えば５μｍ以上２０μｍ以下である。第１絶縁膜４０の第３部分４３の幅及び第１絶縁膜４０の第４部分４４の幅は、例えばそれぞれ１１μｍである。 The first insulating film 40 is made of, for example, silicon oxynitride (SiON), silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO) or niobium oxide (Nb 2 O 5 ), for example, silicon oxynitride (SiON). The thickness of the first insulating film 40 is, for example, 50 nm or more and 500 nm or less. The thickness of the first insulating film 40 is, for example, 270 nm. In the second direction Y, the width of the third portion 43 and the width of the fourth portion 44 of the first insulating film 40 are, for example, 5 μm or more and 20 μm or less. The width of the third portion 43 of the first insulating film 40 and the width of the fourth portion 44 of the first insulating film 40 are, for example, 11 μm, respectively.

第２絶縁膜５０は、例えば、酸化タンタル（Ｔａ２Ｏ５）、窒化アルミニウム（ＡｌＮ）又は窒化シリコン（ＳｉＮ）からなり、例えば酸化タンタル（Ｔａ２Ｏ５）からなる。第２絶縁膜５０の厚さは、例えば５ｎｍ以上１００ｎｍ以下である。第２絶縁膜５０の厚さは、例えば１０ｎｍである。第２絶縁膜５０が複数のドット部分を有する場合、第２絶縁膜５０の各ドット部分の直径は、例えば、２μｍ以上１０μｍ以下である。第１絶縁膜４０の厚さは、第２絶縁膜５０の厚さよりも厚いことが好ましい。これにより、第１絶縁膜４０と第２半導体層１３との界面における反射効率を高くするとともに、第２絶縁膜５０により透光性導電層６０が断線することを低減することができる。第１絶縁膜４０の厚さは、例えば第２絶縁膜５０の厚さの１０倍以上３０倍以下であることが好ましい。第２半導体層１３の上面からの透光性導電層６０の厚さは、例えば１０ｎｍ以上１００ｎｍ以下である。透光性導電層６０の厚さは、例えば６０ｎｍである。透光性導電層６０は、例えば、ＩＴＯ（Indium-Tin-Oxide：酸化インジウムスズ）からなる。 The second insulating film 50 is made of, for example, tantalum oxide (Ta 2 O 5 ), aluminum nitride (AlN) or silicon nitride (SiN), for example, tantalum oxide (Ta 2 O 5 ). The thickness of the second insulating film 50 is, for example, 5 nm or more and 100 nm or less. The thickness of the second insulating film 50 is, for example, 10 nm. When the second insulating film 50 has a plurality of dot portions, the diameter of each dot portion of the second insulating film 50 is, for example, 2 μm or more and 10 μm or less. The thickness of the first insulating film 40 is preferably thicker than the thickness of the second insulating film 50. This increases the reflection efficiency at the interface between the first insulating film 40 and the second semiconductor layer 13, and reduces the disconnection of the transparent conductive layer 60 due to the second insulating film 50. The thickness of the first insulating film 40 is preferably, for example, 10 times or more and 30 times or less than the thickness of the second insulating film 50. The thickness of the transparent conductive layer 60 from the upper surface of the second semiconductor layer 13 is, for example, 10 nm or more and 100 nm or less. The transparent conductive layer 60 has a thickness of, for example, 60 nm. The transparent conductive layer 60 is made of, for example, ITO (Indium-Tin-Oxide).

第２半導体層１３の屈折率ｎ１３と第２絶縁膜５０の屈折率ｎ５０との差の絶対値（｜ｎ１３－ｎ５０｜）は、第２半導体層１３の屈折率ｎ１３と透光性導電層６０の屈折率ｎ６０との差の絶対値（｜ｎ１３－ｎ６０｜）よりも小さい。また、第２半導体層１３の屈折率ｎ１３と第１絶縁膜４０の屈折率ｎ４０との差の絶対値（｜ｎ１３－ｎ４０｜）は、第２半導体層１３の屈折率ｎ１３と透光性導電層６０の屈折率ｎ６０との差の絶対値（｜ｎ１３－ｎ６０｜）よりも大きい。 The absolute value (| n13 - n50 |) of the difference between the refractive index n13 of the second semiconductor layer 13 and the refractive index n50 of the second insulating film 50 is smaller than the absolute value (| n13-n60|) of the difference between the refractive index n13 of the second semiconductor layer 13 and the refractive index n60 of the translucent conductive layer 60. In addition, the absolute value (|n13 - n40 | ) of the difference between the refractive index n13 of the second semiconductor layer 13 and the refractive index n40 of the first insulating film 40 is larger than the absolute value (| n13 - n60 |) of the difference between the refractive index n13 of the second semiconductor layer 13 and the refractive index n60 of the translucent conductive layer 60.

例えば、第２半導体層１３の主成分は窒化ガリウム（ＧａＮ）であり、屈折率ｎ１３は約２．４である。第１絶縁膜４０は酸窒化シリコン（ＳｉＯＮ）からなり、屈折率ｎ４０は約１．６である。第２絶縁膜５０は酸化タンタル（Ｔａ２Ｏ５）からなり、屈折率ｎ５０は約２．２である。透光性導電層６０はＩＴＯからなり、屈折率ｎ６０は約２．０である。 For example, the main component of the second semiconductor layer 13 is gallium nitride (GaN) and has a refractive index n 13 of about 2.4. The first insulating film 40 is made of silicon oxynitride (SiON) and has a refractive index n 40 of about 1.6. The second insulating film 50 is made of tantalum oxide (Ta 2 O 5 ) and has a refractive index n 50 of about 2.2. The transparent conductive layer 60 is made of ITO and has a refractive index n 60 of about 2.0.

したがって、第２半導体層１３の屈折率ｎ１３（約２．４）と第２絶縁膜５０の屈折率ｎ５０（約２．２）との差の絶対値（｜ｎ１３－ｎ５０｜）は約０．２である。第２半導体層１３の屈折率ｎ１３（約２．４）と透光性導電層６０の屈折率ｎ６０（約２．０）との差の絶対値（｜ｎ１３－ｎ６０｜）は約０．４である。第２半導体層１３の屈折率ｎ１３（約２．４）と第１絶縁膜４０の屈折率ｎ４０（約１．６）との差の絶対値（｜ｎ１３－ｎ４０｜）は約０．８である。 Therefore, the absolute value (|n 13 - n 50 |) of the difference between the refractive index n 13 (about 2.4) of the second semiconductor layer 13 and the refractive index n 50 (about 2.2) of the second insulating film 50 is about 0.2. The absolute value (|n 13 - n 60 | ) of the difference between the refractive index n 13 (about 2.4) of the second semiconductor layer 13 and the refractive index n 60 (about 2.0) of the light-transmitting conductive layer 60 is about 0.4. The absolute value (|n 13 - n 40 |) of the difference between the refractive index n 13 (about 2.4) of the second semiconductor layer 13 and the refractive index n 40 (about 1.6) of the first insulating film 40 is about 0.8.

このため、第２半導体層１３の屈折率と第２絶縁膜５０の屈折率との差の絶対値（約０．２）は、第２半導体層１３の屈折率と透光性導電層６０の屈折率との差の絶対値（約０．４）よりも小さい。また、第２半導体層１３の屈折率と第１絶縁膜４０の屈折率との差の絶対値（約０．８）は、第２半導体層１３の屈折率と透光性導電層６０の屈折率との差の絶対値（約０．４）よりも大きい。すなわち、下記数式（１）が成立する。 Therefore, the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the second insulating film 50 (about 0.2) is smaller than the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the translucent conductive layer 60 (about 0.4). In addition, the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the first insulating film 40 (about 0.8) is larger than the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the translucent conductive layer 60 (about 0.4). In other words, the following formula (1) is established.

｜ｎ１３－ｎ５０｜＜｜ｎ１３－ｎ６０｜＜｜ｎ１３－ｎ４０｜ （１） |n 13 −n 50 |<|n 13 −n 60 |<|n 13 −n 40 | (1)

次に、本実施形態に係る発光素子の動作について説明する。
図４は、本実施形態に係る発光素子の動作を示す模式的な断面図である。 Next, the operation of the light emitting device according to this embodiment will be described.
FIG. 4 is a schematic cross-sectional view showing the operation of the light-emitting device according to this embodiment.

図４に示すように、発光素子１においては、光路Ｌ１で示すように、半導体構造体１０の活性層１２において発生した光の一部は、透光性導電層６０を透過して外部に出射する。 As shown in FIG. 4, in the light-emitting element 1, a portion of the light generated in the active layer 12 of the semiconductor structure 10 passes through the transparent conductive layer 60 and is emitted to the outside, as shown by the optical path L1.

また、光路Ｌ２で示すように、半導体構造体１０の活性層１２において発生した光の他の一部は、第２半導体層１３から第２絶縁膜５０に屈折して入射し、第２絶縁膜５０から透光性導電層６０に屈折して入射し、透光性導電層６０を透過して外部に出射する。このとき、第２半導体層１３の屈折率と第２絶縁膜５０の屈折率との差の絶対値は、第２半導体層１３の屈折率と透光性導電層６０の屈折率との差の絶対値よりも小さいため、第２半導体層１３と第２絶縁膜５０との界面においては、第２半導体層１３と透光性導電層６０との界面よりも、光が反射されにくい。仮に第２絶縁膜５０が配置されていないと、第２半導体層１３から透光性導電層６０に入射した光は第２半導体層１３と透光性導電層６０との界面において反射されやすい。この結果、発光素子１の光取出効率が低くなる。 As shown by the optical path L2, another part of the light generated in the active layer 12 of the semiconductor structure 10 is refracted from the second semiconductor layer 13 to the second insulating film 50, refracted from the second insulating film 50 to the transparent conductive layer 60, and transmitted through the transparent conductive layer 60 to be emitted to the outside. At this time, the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the second insulating film 50 is smaller than the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the transparent conductive layer 60, so that light is less likely to be reflected at the interface between the second semiconductor layer 13 and the second insulating film 50 than at the interface between the second semiconductor layer 13 and the transparent conductive layer 60. If the second insulating film 50 is not arranged, the light incident on the transparent conductive layer 60 from the second semiconductor layer 13 is more likely to be reflected at the interface between the second semiconductor layer 13 and the transparent conductive layer 60. As a result, the light extraction efficiency of the light-emitting element 1 is reduced.

更に、光路Ｌ２で示すように、活性層１２から出射した光は、第２半導体層１３と第２絶縁膜５０との界面、及び、第２絶縁膜５０と透光性導電層６０との界面において屈折する。 Furthermore, as shown by optical path L2, the light emitted from the active layer 12 is refracted at the interface between the second semiconductor layer 13 and the second insulating film 50, and at the interface between the second insulating film 50 and the translucent conductive layer 60.

更にまた、光路Ｌ３で示すように、活性層１２において発生した光の更に他の一部は、第２半導体層１３と第１絶縁膜４０との界面で反射され、半導体構造体１０内を伝播した後、透光性導電層６０を介して外部に出射する。仮に第１絶縁膜４０が配置されていないと、活性層１２において発生した光の更に他の一部は、第２半導体層１３及び透光性導電層６０を透過して第２電極３０に到達し、第２電極３０に到達した光の一部は第２電極３０に吸収されてしまう。この結果、発光素子１の光取出効率が低くなる。 Furthermore, as shown by optical path L3, a further portion of the light generated in the active layer 12 is reflected at the interface between the second semiconductor layer 13 and the first insulating film 40, propagates through the semiconductor structure 10, and is then emitted to the outside via the translucent conductive layer 60. If the first insulating film 40 were not provided, a further portion of the light generated in the active layer 12 would pass through the second semiconductor layer 13 and the translucent conductive layer 60 to reach the second electrode 30, and a portion of the light that reaches the second electrode 30 would be absorbed by the second electrode 30. As a result, the light extraction efficiency of the light-emitting element 1 would be reduced.

また、発光素子１においては、電流経路Ｉ１で示すように、第２電極３０から透光性導電層６０内に流入した電流が、第１絶縁膜４０及び第２絶縁膜５０によりＸＹ平面に沿って拡がる。これにより、発光素子１における電流分布を改善することができる。 In addition, in the light-emitting element 1, as shown by current path I1, the current that flows from the second electrode 30 into the translucent conductive layer 60 spreads along the XY plane due to the first insulating film 40 and the second insulating film 50. This improves the current distribution in the light-emitting element 1.

本実施形態の効果について説明する。
本実施形態に係る発光素子１においては、断面視で、第２半導体層１３と透光性導電層６０との間に第２絶縁膜５０が配置されており、第２半導体層１３の屈折率と第２絶縁膜５０の屈折率との差の絶対値が、第２半導体層１３の屈折率と透光性導電層６０の屈折率との差の絶対値よりも小さい。そのため、活性層１２からの光が第２半導体層１３から出射する際に、第２半導体層１３と透光性導電層６０との界面での反射を低減し、光取出効率を向上させることができる。 The effects of this embodiment will be described.
In the light-emitting element 1 according to this embodiment, in a cross-sectional view, the second insulating film 50 is disposed between the second semiconductor layer 13 and the translucent conductive layer 60, and the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the second insulating film 50 is smaller than the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the translucent conductive layer 60. Therefore, when light from the active layer 12 is emitted from the second semiconductor layer 13, reflection at the interface between the second semiconductor layer 13 and the translucent conductive layer 60 can be reduced, and the light extraction efficiency can be improved.

更に、発光素子１においては、断面視で第２半導体層１３と第２電極３０との間に第１絶縁膜４０が配置されている。第２半導体層１３の屈折率と第１絶縁膜４０の屈折率との差の絶対値は、第２半導体層１３の屈折率と透光性導電層６０の屈折率との差の絶対値よりも大きいため、第２半導体層１３から出射して第１絶縁膜４０に到達した光は、第２半導体層１３と第１絶縁膜４０との界面で反射されやすい。これにより、活性層１２から出射した光が第２電極３０に到達することを低減し、光が第２電極３０に吸収されることを低減できる。第１絶縁膜４０によって反射された光は、例えば、基板１００と第１絶縁膜４０との間で反射を繰り返して半導体構造体１０内を伝播し、いずれ発光素子１から出射される可能性が高い。これによっても、光取出効率が向上する。 Furthermore, in the light-emitting element 1, the first insulating film 40 is disposed between the second semiconductor layer 13 and the second electrode 30 in a cross-sectional view. Since the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the first insulating film 40 is greater than the absolute value of the difference between the refractive index of the second semiconductor layer 13 and the refractive index of the translucent conductive layer 60, the light emitted from the second semiconductor layer 13 and reaching the first insulating film 40 is likely to be reflected at the interface between the second semiconductor layer 13 and the first insulating film 40. This reduces the light emitted from the active layer 12 from reaching the second electrode 30, and reduces the absorption of the light by the second electrode 30. The light reflected by the first insulating film 40 is likely to propagate through the semiconductor structure 10, for example, by repeatedly reflecting between the substrate 100 and the first insulating film 40, and eventually be emitted from the light-emitting element 1. This also improves the light extraction efficiency.

更にまた、発光素子１においては、第１絶縁膜４０及び第２絶縁膜５０により、第２電極３０と第２半導体層１３との電流経路Ｉ１がＸＹ平面に沿って拡がるため、上面視で電流密度分布を均一に近づけ、発光素子１の発光強度分布を均一に近づけることができる。 Furthermore, in the light-emitting element 1, the first insulating film 40 and the second insulating film 50 cause the current path I1 between the second electrode 30 and the second semiconductor layer 13 to expand along the XY plane, making it possible to make the current density distribution more uniform when viewed from above, and thus the light-emitting intensity distribution of the light-emitting element 1 more uniform.

＜比較例＞
図５は、本比較例に係る発光素子を示す上面図である。
図６は、図５のVI－VI線による断面図である。
図７は、本比較例に係る発光素子の動作を示す模式的な断面図である。 Comparative Example
FIG. 5 is a top view showing a light emitting element according to this comparative example.
FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
FIG. 7 is a schematic cross-sectional view showing the operation of the light-emitting element according to this comparative example.

図５及び図６に示すように、本比較例に係る発光素子１０１は、第１の実施形態に係る発光素子１と比較して、第１絶縁膜４０及び第２絶縁膜５０が配置されていない点が異なっている。 As shown in Figures 5 and 6, the light-emitting element 101 of this comparative example is different from the light-emitting element 1 of the first embodiment in that the first insulating film 40 and the second insulating film 50 are not arranged.

図７に示すように、発光素子１０１においても、光路Ｌ１で示すように、半導体構造体１０の活性層１２において発生した光の一部は、透光性導電層６０を透過して外部に出射する。しかしながら、光路Ｌ４で示すように、半導体構造体１０の活性層１２において発生した光の他の一部は、第２半導体層１３と透光性導電層６０との界面において反射される。また、光路Ｌ５で示すように、活性層１２において発生した光の更に他の一部は、透光性導電層６０を介して第２電極３０に入射し、第２電極３０に吸収される。このため、本比較例に係る発光素子１０１の光取出効率は、第１の実施形態に係る発光素子１の光取出効率よりもが低くなる。 7, in the light emitting device 101, as shown by the optical path L1, a part of the light generated in the active layer 12 of the semiconductor structure 10 passes through the transparent conductive layer 60 and is emitted to the outside. However, as shown by the optical path L4, another part of the light generated in the active layer 12 of the semiconductor structure 10 is reflected at the interface between the second semiconductor layer 13 and the transparent conductive layer 60. In addition, as shown by the optical path L5, still another part of the light generated in the active layer 12 enters the second electrode 30 through the transparent conductive layer 60 and is absorbed by the second electrode 30. Therefore, the light extraction efficiency of the light emitting device 101 according to this comparative example is lower than the light extraction efficiency of the light emitting device 1 according to the first embodiment.

また、電流経路Ｉ２で示すように、第２電極３０と第２半導体層１３との間の電流は、第２電極３０と第２半導体層１３とを最短距離で結ぶ領域に集中しやすい。このため、上面視で、電流密度分布が不均一となりやすく、発光素子１０１の発光強度分布が不均一となる。 In addition, as shown by current path I2, the current between the second electrode 30 and the second semiconductor layer 13 tends to concentrate in the area that connects the second electrode 30 and the second semiconductor layer 13 by the shortest distance. As a result, the current density distribution tends to be non-uniform when viewed from above, and the light emission intensity distribution of the light emitting element 101 becomes non-uniform.

＜第１の実施形態の第１の変形例＞
図８は、本変形例に係る発光素子を示す上面図である。
本変形例においては、第１の実施形態と異なる部分を主として説明し、第１の実施形態と同様な構成、動作及び効果は、説明を省略する。後述する他の変形例及び実施形態についても同様である。 <First Modification of the First Embodiment>
FIG. 8 is a top view showing the light emitting element according to this modification.
In this modification, differences from the first embodiment will be mainly described, and descriptions of configurations, operations, and effects similar to those of the first embodiment will be omitted. The same applies to other modifications and embodiments described later.

図８に示すように、本変形例に係る発光素子１ａにおいては、上面視で、第２領域Ｒ２における第２絶縁膜５０の面密度が、第２領域Ｒ２を除く第２半導体層１３の上面１３ａの領域における第２絶縁膜５０の面密度よりも高い。一例では、第２領域Ｒ２における第２絶縁膜５０の面密度は、第２領域Ｒ２を除く第２半導体層１３の上面１３ａの領域における第２絶縁膜５０の面密度の約２倍である。 As shown in FIG. 8, in the light-emitting element 1a according to this modification, the surface density of the second insulating film 50 in the second region R2 is higher than the surface density of the second insulating film 50 in the region of the upper surface 13a of the second semiconductor layer 13 excluding the second region R2 when viewed from above. In one example, the surface density of the second insulating film 50 in the second region R2 is approximately twice the surface density of the second insulating film 50 in the region of the upper surface 13a of the second semiconductor layer 13 excluding the second region R2.

第２絶縁膜５０の面密度とは、単位面積当たりの第２絶縁膜５０が占める割合である。例えば、第２絶縁膜５０が複数のドット部分を有する場合は、ドット部分の数が一定であれば、各ドット部分の面積が大きいほど第２絶縁膜５０の面密度は増加し、各ドット部分の面積が一定であれば、ドット部分の数が多いほど第２絶縁膜５０の面密度は増加する。また、第１の実施形態において説明したように、第２領域Ｒ２は、第２方向Ｙにおいて、第２半導体層１３の上面１３ａのうち第２電極３０の２本の第２延伸部３３の間に位置する領域である。 The surface density of the second insulating film 50 is the proportion of the second insulating film 50 per unit area. For example, if the second insulating film 50 has multiple dot portions, if the number of dot portions is constant, the surface density of the second insulating film 50 increases as the area of each dot portion increases, and if the area of each dot portion is constant, the surface density of the second insulating film 50 increases as the number of dot portions increases. Also, as described in the first embodiment, the second region R2 is a region located between the two second extensions 33 of the second electrode 30 on the upper surface 13a of the second semiconductor layer 13 in the second direction Y.

本変形例では、第２領域Ｒ２における第２絶縁膜５０の面密度を、第２領域Ｒ２を除く領域における第２絶縁膜５０の面密度よりも高くしている。これにより、第２領域Ｒ２以外の領域に比較して高い電流密度となりやすい第２領域Ｒ２における光取出効率を向上させつつ、第２領域Ｒ２以外の領域における第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 In this modification, the surface density of the second insulating film 50 in the second region R2 is made higher than the surface density of the second insulating film 50 in the region other than the second region R2. This improves the light extraction efficiency in the second region R2, which tends to have a higher current density than the region other than the second region R2, while ensuring the contact area between the second semiconductor layer 13 and the translucent conductive layer 60 in the region other than the second region R2, thereby reducing deterioration of the forward voltage.

＜第１の実施形態の第２の変形例＞
図９は、本変形例に係る発光素子を示す上面図である。
図９に示すように、本変形例に係る発光素子１ｂにおいては、上面視で、第１領域Ｒ１における第２絶縁膜５０の面密度が、第１領域Ｒ１を除く第２半導体層１３の上面１３ａの領域における第２絶縁膜５０の面密度よりも高い。一例では、第１領域Ｒ１における第２絶縁膜５０の面密度は、第２半導体層１３の上面１３ａのうち第１領域Ｒ１を除く領域における第２絶縁膜５０の面密度の約２倍である。第１の実施形態において説明したように、第１領域Ｒ１は、第２方向Ｙにおいて、第２半導体層１３の上面１３ａのうち第１電極２０の一対の第１延伸部２２の間に位置する領域である。 <Second Modification of the First Embodiment>
FIG. 9 is a top view showing the light emitting element according to this modification.
9, in the light emitting element 1b according to this modification, the surface density of the second insulating film 50 in the first region R1 is higher than the surface density of the second insulating film 50 in a region of the upper surface 13a of the second semiconductor layer 13 excluding the first region R1, as viewed from above. In one example, the surface density of the second insulating film 50 in the first region R1 is about twice the surface density of the second insulating film 50 in a region of the upper surface 13a of the second semiconductor layer 13 excluding the first region R1. As described in the first embodiment, the first region R1 is a region of the upper surface 13a of the second semiconductor layer 13 located between a pair of first extension portions 22 of the first electrode 20 in the second direction Y.

本変形例では、第１領域Ｒ１における第２絶縁膜５０の面密度を、第１領域Ｒ１を除く領域における第２絶縁膜５０の面密度よりも高くしている。これにより、第１領域Ｒ１以外の領域に比較して高い電流密度となりやすい第１領域Ｒ１における光取出効率を向上させつつ、第１領域Ｒ１以外の領域における第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 In this modification, the surface density of the second insulating film 50 in the first region R1 is made higher than the surface density of the second insulating film 50 in the region other than the first region R1. This improves the light extraction efficiency in the first region R1, which tends to have a higher current density than the region other than the first region R1, while ensuring the contact area between the second semiconductor layer 13 and the translucent conductive layer 60 in the region other than the first region R1, thereby reducing deterioration of the forward voltage.

＜第１の実施形態の第３の変形例＞
図１０は、本変形例に係る発光素子を示す上面図である。
図１０に示すように、本変形例に係る発光素子１ｃにおいては、上面視で、第３領域Ｒ３における第２絶縁膜５０の面密度が、第３領域Ｒ３を除く第２半導体層１３の上面１３ａの領域における第２絶縁膜５０の面密度よりも高い。一例では、第３領域Ｒ３における第２絶縁膜５０の面密度は、第２半導体層１３の上面１３ａのうち第３領域Ｒ３を除く領域における第２絶縁膜５０の面密度の約２倍である。第３領域Ｒ３とは、第１領域Ｒ１において、第１方向Ｘの中央部に位置する領域であり、例えば、第１方向Ｘを長軸とする楕円形の領域である。第２方向Ｙにおける第３領域Ｒ３の長さは第１領域Ｒ１の長さと同じであり、第１方向Ｘにおける第３領域Ｒ３の長さは第１領域Ｒ１の長さよりも短い。このため、第３領域Ｒ３の外縁のうち、第２方向Ｙの両端部は第１領域Ｒ１の外縁に達し、それ以外の部分は第１領域Ｒ１の内部に位置している。図１０に示す例では、第２電極３０の第２延伸部３２の先端は、第３領域Ｒ３の内部に位置する。なお、第３領域Ｒ３の形状は、長円形又は矩形であってもよい。第３領域Ｒ３は第１領域Ｒ１の一部である。 <Third Modification of the First Embodiment>
FIG. 10 is a top view showing the light emitting element according to this modification.
As shown in FIG. 10, in the light emitting element 1c according to this modification, the surface density of the second insulating film 50 in the third region R3 is higher than the surface density of the second insulating film 50 in the region of the upper surface 13a of the second semiconductor layer 13 excluding the third region R3, as viewed from above. In one example, the surface density of the second insulating film 50 in the third region R3 is about twice the surface density of the second insulating film 50 in the region of the upper surface 13a of the second semiconductor layer 13 excluding the third region R3. The third region R3 is a region located in the center of the first region R1 in the first direction X, and is, for example, an elliptical region with the first direction X as its major axis. The length of the third region R3 in the second direction Y is the same as the length of the first region R1, and the length of the third region R3 in the first direction X is shorter than the length of the first region R1. Therefore, of the outer edge of the third region R3, both ends in the second direction Y reach the outer edge of the first region R1, and the other parts are located inside the first region R1. 10, the tip of the second extension portion 32 of the second electrode 30 is located inside the third region R3. The shape of the third region R3 may be an ellipse or a rectangle. The third region R3 is a part of the first region R1.

本変形例では、第１領域Ｒ１のうち電流密度がより高くなりやすい第３領域Ｒ３における第２絶縁膜５０の面密度を、第３領域Ｒ３を除く領域における第２絶縁膜５０の面密度よりも高くしている。これにより、第３領域Ｒ３における光取出効率を向上させつつ、第３領域Ｒ３以外の領域における第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 In this modification, the surface density of the second insulating film 50 in the third region R3, which is the first region R1 where the current density is likely to be higher, is made higher than the surface density of the second insulating film 50 in the region other than the third region R3. This improves the light extraction efficiency in the third region R3 while ensuring the contact area between the second semiconductor layer 13 and the translucent conductive layer 60 in the region other than the third region R3, thereby reducing deterioration of the forward voltage.

＜第２の実施形態＞
図１１は、本実施形態に係る発光素子を示す上面図である。
図１１に示すように、本実施形態に係る発光素子２は、第１の実施形態に係る発光素子１と比較して、上面視において、第２絶縁膜５０が、第２半導体層１３の上面１３ａのうち第２半導体層１３の角部Ｒ４を除く領域に配置されている点が異なっている。すなわち、発光素子２においては、４つの角部Ｒ４には第２絶縁膜５０は配置されていない。本実施形態においては、上面視で、各角部Ｒ４の形状は直角三角形である。 Second Embodiment
FIG. 11 is a top view showing the light emitting device according to this embodiment.
11 , the light-emitting element 2 according to this embodiment differs from the light-emitting element 1 according to the first embodiment in that, in top view, the second insulating film 50 is disposed in a region of the upper surface 13a of the second semiconductor layer 13 excluding the corners R4 of the second semiconductor layer 13. That is, in the light-emitting element 2, the second insulating film 50 is not disposed at the four corners R4. In this embodiment, in top view, the shape of each corner R4 is a right-angled triangle.

第１電極２０及び第２電極３０が配置されていない角部Ｒ４は、他の領域に比較して低い電流密度となる領域である。本実施形態においては、角部Ｒ４以外の領域に第２絶縁膜５０を配置し、角部Ｒ４に第２絶縁膜５０を配置しないことにより、光取出効率を向上させつつ、角部Ｒ４における第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 The corner R4, where the first electrode 20 and the second electrode 30 are not arranged, is a region where the current density is lower than other regions. In this embodiment, by arranging the second insulating film 50 in regions other than the corner R4 and not arranging the second insulating film 50 at the corner R4, it is possible to improve the light extraction efficiency while ensuring the contact area between the second semiconductor layer 13 and the translucent conductive layer 60 at the corner R4 and reduce deterioration of the forward voltage.

＜第２の実施形態の変形例＞
図１２は、本変形例に係る発光素子を示す上面図である。
図１２に示すように、本変形例に係る発光素子２ａにおいては、第２半導体層１３の４つの角部Ｒ５には第２絶縁膜５０は配置されていない。第１電極２０及び第２電極３０が配置されていない角部Ｒ５は、上述した角部Ｒ４と同様に、他の領域に比較して低い電流密度となる領域である。本変形例においては、上面視で、各角部Ｒ５の形状は矩形である。また、第２領域Ｒ２における第２絶縁膜５０の面密度が、第２半導体層１３の上面１３ａのうち角部Ｒ５及び第２領域Ｒ２を除く領域における第２絶縁膜５０の面密度よりも高い。これにより、第２の実施形態の発光素子２と同様に、光取出効率を向上させつつ、角部Ｒ５における第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 <Modification of the second embodiment>
FIG. 12 is a top view showing the light emitting element according to this modification.
As shown in FIG. 12, in the light emitting element 2a according to this modification, the second insulating film 50 is not arranged at the four corners R5 of the second semiconductor layer 13. The corners R5 where the first electrode 20 and the second electrode 30 are not arranged are regions where the current density is lower than other regions, similar to the above-mentioned corners R4. In this modification, the shape of each corner R5 is rectangular when viewed from above. In addition, the surface density of the second insulating film 50 in the second region R2 is higher than the surface density of the second insulating film 50 in the region of the upper surface 13a of the second semiconductor layer 13 excluding the corners R5 and the second region R2. As a result, like the light emitting element 2 of the second embodiment, the contact area between the second semiconductor layer 13 and the transparent conductive layer 60 at the corners R5 can be secured and the deterioration of the forward voltage can be reduced while improving the light extraction efficiency.

＜第３の実施形態＞
図１３は、本実施形態に係る発光素子を示す上面図である。
図１３に示すように、本実施形態に係る発光素子３は、第１の実施形態に係る発光素子１と比較して、上面視において、第２絶縁膜５０が、第２領域Ｒ２のみに配置されている点が異なっている。これにより、第２領域Ｒ２における光取出効率を向上させつつ、第２領域Ｒ２以外の領域において第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 Third Embodiment
FIG. 13 is a top view showing the light emitting device according to this embodiment.
13, the light emitting element 3 according to this embodiment is different from the light emitting element 1 according to the first embodiment in that the second insulating film 50 is disposed only in the second region R2 in a top view. This makes it possible to improve the light extraction efficiency in the second region R2 while ensuring the contact area between the second semiconductor layer 13 and the light-transmitting conductive layer 60 in regions other than the second region R2 and reducing deterioration of the forward voltage.

なお、本実施形態において、第１領域Ｒ１における第２絶縁膜５０の面密度を、第２領域Ｒ２のうち第１領域Ｒ１を除く領域における第２絶縁膜５０の面密度よりも高くしてもよい。また、第３領域Ｒ３における第２絶縁膜５０の面密度を、第２領域Ｒ２のうち第３領域Ｒ３を除く領域における第２絶縁膜５０の面密度よりも高くしてもよい。 In this embodiment, the surface density of the second insulating film 50 in the first region R1 may be higher than the surface density of the second insulating film 50 in the region of the second region R2 excluding the first region R1. Also, the surface density of the second insulating film 50 in the third region R3 may be higher than the surface density of the second insulating film 50 in the region of the second region R2 excluding the third region R3.

＜第４の実施形態＞
図１４は、本実施形態に係る発光素子を示す上面図である。
図１４に示すように、本実施形態に係る発光素子４は、第１の実施形態に係る発光素子１と比較して、上面視において、第２絶縁膜５０が、第１領域Ｒ１のみに配置されている点が異なっている。これにより、第１領域Ｒ１における光取出効率を向上させつつ、第１領域Ｒ１以外の領域において第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 Fourth Embodiment
FIG. 14 is a top view showing the light emitting device according to this embodiment.
14, the light emitting element 4 according to this embodiment is different from the light emitting element 1 according to the first embodiment in that the second insulating film 50 is disposed only in the first region R1 when viewed from the top. This makes it possible to improve the light extraction efficiency in the first region R1 while ensuring the contact area between the second semiconductor layer 13 and the light-transmitting conductive layer 60 in regions other than the first region R1 and reducing deterioration of the forward voltage.

なお、本実施形態において、第３領域Ｒ３における第２絶縁膜５０の面密度を、第１領域Ｒ１のうち第３領域Ｒ３を除く領域における第２絶縁膜５０の面密度よりも高くしてもよい。 In this embodiment, the surface density of the second insulating film 50 in the third region R3 may be higher than the surface density of the second insulating film 50 in the region of the first region R1 excluding the third region R3.

＜第５の実施形態＞
図１５は、本実施形態に係る発光素子を示す上面図である。
図１５に示すように、本実施形態に係る発光素子５は、第１の実施形態に係る発光素子１と比較して、上面視において、第２絶縁膜５０が、第３領域Ｒ３のみに配置されている点が異なっている。これにより、第３領域Ｒ３における光取出効率を向上させつつ、第３領域Ｒ３以外の領域において第２半導体層１３と透光性導電層６０との接触面積を確保し順方向電圧の悪化を低減することができる。 Fifth embodiment
FIG. 15 is a top view showing the light emitting device according to this embodiment.
15, the light emitting element 5 according to this embodiment is different from the light emitting element 1 according to the first embodiment in that the second insulating film 50 is disposed only in the third region R3 in a top view. This makes it possible to improve the light extraction efficiency in the third region R3 while ensuring the contact area between the second semiconductor layer 13 and the light-transmitting conductive layer 60 in regions other than the third region R3 and reducing deterioration of the forward voltage.

前述の各実施形態及びその変形例は、本発明を具現化した例であり、本発明はこれらの実施形態及び変形例には限定されない。例えば、前述の各実施形態及び各変形例において、いくつかの構成要素を追加、削除又は変更したものも本発明に含まれる。また、前述の各実施形態及び各変形例は、相互に組み合わせて実施することができる。 The above-described embodiments and their modifications are examples of the realization of the present invention, and the present invention is not limited to these embodiments and modifications. For example, the present invention also includes the above-described embodiments and modifications in which some components are added, deleted, or modified. Furthermore, the above-described embodiments and modifications can be implemented in combination with each other.

例えば、第２絶縁膜５０の面密度は、３段階以上に設定してもよい。例えば、第３領域Ｒ３における第２絶縁膜５０の面密度を最も高くし、第１領域Ｒ１における第２絶縁膜５０の面密度を次に高くし、第２領域Ｒ２における第２絶縁膜５０の面密度を次に高くし、第２半導体層１３の上面１３ａにおける第２領域Ｒ２及び角部Ｒ４又はＲ５を除く領域における第２絶縁膜５０の面密度を最も低くし、角部Ｒ４又はＲ５には第２絶縁膜５０を配置しない形態としてもよい。発光素子における発光強度分布を均一に近づけるためには、上面視で、発光素子の中央部分における第２絶縁膜５０の面密度を高くし、発光素子の周辺に向かうほど第２絶縁膜５０の面密度を低くすることが好ましい。 For example, the surface density of the second insulating film 50 may be set to three or more stages. For example, the surface density of the second insulating film 50 in the third region R3 may be the highest, the surface density of the second insulating film 50 in the first region R1 may be the next highest, the surface density of the second insulating film 50 in the second region R2 may be the next highest, and the surface density of the second insulating film 50 in the region excluding the second region R2 and the corners R4 or R5 on the upper surface 13a of the second semiconductor layer 13 may be the lowest, and the second insulating film 50 may not be disposed in the corners R4 or R5. In order to make the light emission intensity distribution in the light emitting element closer to uniform, it is preferable to increase the surface density of the second insulating film 50 in the center part of the light emitting element in a top view, and decrease the surface density of the second insulating film 50 toward the periphery of the light emitting element.

本発明は、例えば、照明装置及び表示装置の光源等に利用することができる。 The present invention can be used, for example, as a light source for lighting devices and display devices.

１、１ａ、１ｂ、１ｃ、２、２ａ、３、４、５：発光素子
１０：半導体構造体
１１：第１半導体層
１２：活性層
１３：第２半導体層
１３ａ：第２半導体層の上面
１４：開口部
２０：第１電極
２１：第１パッド部
２２：第１延伸部
３０：第２電極
３１：第２パッド部
３２、３３：第２延伸部
４０：第１絶縁膜
４１：第１部分
４２：第２部分
４３：第３部分
４４：第４部分
５０：第２絶縁膜
６０：透光性導電層
１００：基板
１０１：発光素子
Ｉ１、Ｉ２：電流経路
Ｌ１、Ｌ２、Ｌ３、Ｌ４、Ｌ５：光路
Ｒ１：第１領域
Ｒ２：第２領域
Ｒ３：第３領域
Ｒ４：角部
Ｒ５：角部
Ｘ：第１方向
Ｙ：第２方向
Ｚ：第３方向 1, 1a, 1b, 1c, 2, 2a, 3, 4, 5: Light emitting element 10: Semiconductor structure 11: First semiconductor layer 12: Active layer 13: Second semiconductor layer 13a: Upper surface of second semiconductor layer 14: Opening 20: First electrode 21: First pad portion 22: First extension portion 30: Second electrode 31: Second pad portion 32, 33: Second extension portion 40: First insulating film 41: First portion 42: Second portion 43: Third portion 44: Fourth portion 50: Second insulating film 60: Light-transmitting conductive layer 100: Substrate 101: Light emitting element I1, I2: Current path L1, L2, L3, L4, L5: Optical path R1: First region R2: Second region R3: Third region R4: Corner portion R5: Corner portion X: First direction Y: Second direction Z: Third direction

Claims (11)

第１導電型の第１半導体層と、
前記第１半導体層の上面の一部に配置され、前記第１半導体層と電気的に接続された第１電極と、
前記第１半導体層の上面において前記第１電極が配置されていない領域に配置された活性層と、
前記活性層の上面に配置された第２導電型の第２半導体層と、
前記第２半導体層の上面の一部に配置され、前記第２半導体層に接した第１絶縁膜と、
前記第２半導体層の上面であって前記第１絶縁膜が配置されていない領域の一部に配置され、前記第２半導体層に接した第２絶縁膜と、
前記第２半導体層の上面に配置され、前記第２半導体層と電気的に接続され、前記第２半導体層及び前記第２絶縁膜に接し、前記第１絶縁膜及び前記第２絶縁膜を覆う透光性導電層と、
前記透光性導電層の上面の一部に配置され、前記第２半導体層と電気的に接続された第２電極と、
を備え、
断面視において、前記第１絶縁膜は、前記第２半導体層と前記第２電極との間に配置され、
前記第２半導体層の屈折率と前記第２絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも小さく、
前記第２半導体層の屈折率と前記第１絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも大きい発光素子。 A first semiconductor layer of a first conductivity type;
a first electrode disposed on a portion of an upper surface of the first semiconductor layer and electrically connected to the first semiconductor layer;
an active layer disposed on a region of the upper surface of the first semiconductor layer where the first electrode is not disposed;
a second semiconductor layer of a second conductivity type disposed on an upper surface of the active layer;
a first insulating film disposed on a portion of an upper surface of the second semiconductor layer and in contact with the second semiconductor layer ;
a second insulating film disposed on a portion of an upper surface of the second semiconductor layer where the first insulating film is not disposed, and in contact with the second semiconductor layer;
a transparent conductive layer disposed on an upper surface of the second semiconductor layer, electrically connected to the second semiconductor layer, in contact with the second semiconductor layer and the second insulating film, and covering the first insulating film and the second insulating film;
a second electrode disposed on a portion of an upper surface of the light-transmitting conductive layer and electrically connected to the second semiconductor layer;
Equipped with
In a cross-sectional view, the first insulating film is disposed between the second semiconductor layer and the second electrode,
an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the second insulating film is smaller than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the translucent conductive layer;
A light-emitting element in which an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the first insulating film is larger than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the translucent conductive layer. 断面視において、前記第１絶縁膜は、前記第１半導体層と前記第１電極との間に更に配置された請求項１に記載の発光素子。 The light-emitting element according to claim 1, wherein, in a cross-sectional view, the first insulating film is further disposed between the first semiconductor layer and the first electrode. 前記第１電極は、第１パッド部と、前記第１パッド部から延びた第１延伸部とを有し、
断面視において、前記第１絶縁膜は、前記第１半導体層と前記第１パッド部の間に更に配置された請求項１または２に記載の発光素子。 the first electrode has a first pad portion and a first extension portion extending from the first pad portion;
The light-emitting element according to claim 1 , wherein in a cross-sectional view, the first insulating film is further disposed between the first semiconductor layer and the first pad portion. 前記第２電極は、第２パッド部と、前記第２パッド部から延びた第２延伸部とを有し、
断面視において、前記第１絶縁膜は、前記第２半導体層と前記第２パッド部との間及び前記第２半導体層と前記第２延伸部との間に配置され、前記第１半導体層と前記第１延伸部との間には配置されていない請求項３に記載の発光素子。 the second electrode has a second pad portion and a second extension portion extending from the second pad portion,
4. The light-emitting element of claim 3, wherein, in a cross-sectional view, the first insulating film is arranged between the second semiconductor layer and the second pad portion and between the second semiconductor layer and the second extension portion, and is not arranged between the first semiconductor layer and the first extension portion. 第１導電型の第１半導体層と、
前記第１半導体層の上面の一部に配置され、前記第１半導体層と電気的に接続された第１電極と、
前記第１半導体層の上面において前記第１電極が配置されていない領域に配置された活性層と、
前記活性層の上面に配置された第２導電型の第２半導体層と、
前記第２半導体層の上面の一部に配置され、前記第２半導体層に接した第１絶縁膜と、
前記第２半導体層の上面であって前記第１絶縁膜が配置されていない領域の一部に配置され、前記第２半導体層に接した第２絶縁膜と、
前記第２半導体層の上面に配置され、前記第２半導体層と電気的に接続され、前記第２半導体層及び前記第２絶縁膜に接し、前記第１絶縁膜及び前記第２絶縁膜を覆う透光性導電層と、
前記透光性導電層の上面の一部に配置され、前記第２半導体層と電気的に接続された第２電極と、
を備え、
断面視において、前記第１絶縁膜は、前記第２半導体層と前記第２電極との間に配置され、
前記第２半導体層の屈折率と前記第２絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも小さく、
前記第２半導体層の屈折率と前記第１絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも大きく、
前記第１電極は、第１パッド部と、前記第１パッド部から延びた複数の第１延伸部とを有し、
前記第２電極は、第２パッド部と、前記第２パッド部から前記第１パッド部に向かう第１方向に前記第２パッド部から延びた第２延伸部とを有し、
上面視において、前記第２延伸部は、前記第１方向に直交する第２方向において、前記第２半導体層の上面のうち前記第１延伸部の間に位置する第１領域に配置され、
前記第１領域における前記第２絶縁膜の面密度は、前記第１領域を除く前記第２半導体層の上面の領域における前記第２絶縁膜の面密度よりも高い発光素子。 A first semiconductor layer of a first conductivity type;
a first electrode disposed on a portion of an upper surface of the first semiconductor layer and electrically connected to the first semiconductor layer;
an active layer disposed on a region of the upper surface of the first semiconductor layer where the first electrode is not disposed;
a second semiconductor layer of a second conductivity type disposed on an upper surface of the active layer;
a first insulating film disposed on a portion of an upper surface of the second semiconductor layer and in contact with the second semiconductor layer ;
a second insulating film disposed on a portion of an upper surface of the second semiconductor layer where the first insulating film is not disposed , and in contact with the second semiconductor layer ;
a transparent conductive layer disposed on an upper surface of the second semiconductor layer, electrically connected to the second semiconductor layer, in contact with the second semiconductor layer and the second insulating film, and covering the first insulating film and the second insulating film;
a second electrode disposed on a portion of an upper surface of the light-transmitting conductive layer and electrically connected to the second semiconductor layer;
Equipped with
In a cross-sectional view, the first insulating film is disposed between the second semiconductor layer and the second electrode,
an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the second insulating film is smaller than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the translucent conductive layer;
an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the first insulating film is greater than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the translucent conductive layer;
the first electrode has a first pad portion and a plurality of first extension portions extending from the first pad portion;
the second electrode has a second pad portion and a second extension portion extending from the second pad portion in a first direction from the second pad portion toward the first pad portion,
When viewed from above, the second extension portion is disposed in a first region located between the first extension portions of the upper surface of the second semiconductor layer in a second direction perpendicular to the first direction,
A light emitting element in which the surface density of the second insulating film in the first region is higher than the surface density of the second insulating film in a region of the upper surface of the second semiconductor layer excluding the first region. 第１導電型の第１半導体層と、
前記第１半導体層の上面の一部に配置され、前記第１半導体層と電気的に接続された第１電極と、
前記第１半導体層の上面において前記第１電極が配置されていない領域に配置された活性層と、
前記活性層の上面に配置された第２導電型の第２半導体層と、
前記第２半導体層の上面の一部に配置され、前記第２半導体層に接した第１絶縁膜と、
前記第２半導体層の上面であって前記第１絶縁膜が配置されていない領域の一部に配置され、前記第２半導体層に接した第２絶縁膜と、
前記第２半導体層の上面に配置され、前記第２半導体層と電気的に接続され、前記第２半導体層及び前記第２絶縁膜に接し、前記第１絶縁膜及び前記第２絶縁膜を覆う透光性導電層と、
前記透光性導電層の上面の一部に配置され、前記第２半導体層と電気的に接続された第２電極と、
を備え、
断面視において、前記第１絶縁膜は、前記第２半導体層と前記第２電極との間に配置され、
前記第２半導体層の屈折率と前記第２絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも小さく、
前記第２半導体層の屈折率と前記第１絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも大きく、
前記第１電極は、第１パッド部と、前記第１パッド部から延びた第１延伸部とを有し、
前記第２電極は、第２パッド部と、前記第２パッド部から延びた複数の第２延伸部とを有し、
前記第１延伸部及び前記第２延伸部は、前記第２パッド部から前記第１パッド部に向かう第１方向に沿った部分を有し、
上面視において、前記第１パッド部と前記第１延伸部は、前記第１方向に直交する第２方向において、前記第２半導体層の上面のうち前記第２延伸部の間に位置する第２領域に配置され、
前記第２領域における前記第２絶縁膜の面密度は、前記第２領域を除く前記第２半導体層の上面の領域における前記第２絶縁膜の面密度よりも高い発光素子。 A first semiconductor layer of a first conductivity type;
a first electrode disposed on a portion of an upper surface of the first semiconductor layer and electrically connected to the first semiconductor layer;
an active layer disposed on a region of the upper surface of the first semiconductor layer where the first electrode is not disposed;
a second semiconductor layer of a second conductivity type disposed on an upper surface of the active layer;
a first insulating film disposed on a portion of an upper surface of the second semiconductor layer and in contact with the second semiconductor layer ;
a second insulating film disposed on a portion of an upper surface of the second semiconductor layer where the first insulating film is not disposed , and in contact with the second semiconductor layer ;
a transparent conductive layer disposed on an upper surface of the second semiconductor layer, electrically connected to the second semiconductor layer, in contact with the second semiconductor layer and the second insulating film, and covering the first insulating film and the second insulating film;
a second electrode disposed on a portion of an upper surface of the light-transmitting conductive layer and electrically connected to the second semiconductor layer;
Equipped with
In a cross-sectional view, the first insulating film is disposed between the second semiconductor layer and the second electrode,
an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the second insulating film is smaller than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the translucent conductive layer;
an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the first insulating film is greater than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the light-transmitting conductive layer;
the first electrode has a first pad portion and a first extension portion extending from the first pad portion;
the second electrode has a second pad portion and a plurality of second extension portions extending from the second pad portion;
the first extending portion and the second extending portion have a portion along a first direction from the second pad portion toward the first pad portion,
When viewed from above, the first pad portion and the first extension portion are disposed in a second region of the upper surface of the second semiconductor layer that is located between the second extension portions in a second direction perpendicular to the first direction,
A light emitting element in which the surface density of the second insulating film in the second region is higher than the surface density of the second insulating film in a region of the top surface of the second semiconductor layer excluding the second region. 第１導電型の第１半導体層と、
前記第１半導体層の上面の一部に配置され、前記第１半導体層と電気的に接続された第１電極と、
前記第１半導体層の上面において前記第１電極が配置されていない領域に配置された活性層と、
前記活性層の上面に配置された第２導電型の第２半導体層と、
前記第２半導体層の上面の一部に配置され、前記第２半導体層に接した第１絶縁膜と、
前記第２半導体層の上面であって前記第１絶縁膜が配置されていない領域の一部に配置され、前記第２半導体層に接した第２絶縁膜と、
前記第２半導体層の上面に配置され、前記第２半導体層と電気的に接続され、前記第２半導体層及び前記第２絶縁膜に接し、前記第１絶縁膜及び前記第２絶縁膜を覆う透光性導電層と、
前記透光性導電層の上面の一部に配置され、前記第２半導体層と電気的に接続された第２電極と、
を備え、
断面視において、前記第１絶縁膜は、前記第２半導体層と前記第２電極との間に配置され、
前記第２半導体層の屈折率と前記第２絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも小さく、
前記第２半導体層の屈折率と前記第１絶縁膜の屈折率との差の絶対値は、前記第２半導体層の屈折率と前記透光性導電層の屈折率との差の絶対値よりも大きく、
前記第２半導体層の形状は、上面視において矩形であり、
上面視において、前記第２絶縁膜は、前記第２半導体層の上面のうち前記第２半導体層の角部を除く領域に配置された発光素子。 A first semiconductor layer of a first conductivity type;
a first electrode disposed on a portion of an upper surface of the first semiconductor layer and electrically connected to the first semiconductor layer;
an active layer disposed on a region of the upper surface of the first semiconductor layer where the first electrode is not disposed;
a second semiconductor layer of a second conductivity type disposed on an upper surface of the active layer;
a first insulating film disposed on a portion of an upper surface of the second semiconductor layer and in contact with the second semiconductor layer ;
a second insulating film disposed on a portion of an upper surface of the second semiconductor layer where the first insulating film is not disposed , and in contact with the second semiconductor layer ;
a transparent conductive layer disposed on an upper surface of the second semiconductor layer, electrically connected to the second semiconductor layer, in contact with the second semiconductor layer and the second insulating film, and covering the first insulating film and the second insulating film;
a second electrode disposed on a portion of an upper surface of the light-transmitting conductive layer and electrically connected to the second semiconductor layer;
Equipped with
In a cross-sectional view, the first insulating film is disposed between the second semiconductor layer and the second electrode,
an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the second insulating film is smaller than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the translucent conductive layer;
an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the first insulating film is greater than an absolute value of a difference between a refractive index of the second semiconductor layer and a refractive index of the light-transmitting conductive layer;
The second semiconductor layer has a rectangular shape in a top view,
When viewed from above, the second insulating film is disposed in a region of the upper surface of the second semiconductor layer excluding corners of the second semiconductor layer. 上面視において、前記第２電極は、前記第２半導体層の上面の前記第１絶縁膜が配置された領域内に配置された請求項１～７のいずれか１つに記載の発光素子。 The light-emitting element according to any one of claims 1 to 7, wherein, when viewed from above, the second electrode is disposed within a region of the upper surface of the second semiconductor layer where the first insulating film is disposed. 前記第１絶縁膜の膜厚は、前記第２絶縁膜の膜厚よりも厚い請求項１～８のいずれか１つに記載の発光素子。 The light-emitting device according to any one of claims 1 to 8, wherein the thickness of the first insulating film is thicker than the thickness of the second insulating film. 前記第２絶縁膜は、複数のドット部分を有する請求項１～９のいずれか１つに記載の発光素子。 The light-emitting element according to any one of claims 1 to 9, wherein the second insulating film has a plurality of dot portions. 前記透光性導電層は、前記第１絶縁膜に接した請求項１～１０のいずれか１つに記載の発光素子。11. The light-emitting device according to claim 1, wherein the transparent conductive layer is in contact with the first insulating film.
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