JP7482760B2 - Charged particle beam irradiation equipment - Google Patents

Charged particle beam irradiation equipment Download PDF

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JP7482760B2
JP7482760B2 JP2020193563A JP2020193563A JP7482760B2 JP 7482760 B2 JP7482760 B2 JP 7482760B2 JP 2020193563 A JP2020193563 A JP 2020193563A JP 2020193563 A JP2020193563 A JP 2020193563A JP 7482760 B2 JP7482760 B2 JP 7482760B2
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charged particle
particle beam
lid
vacuum vessel
beam irradiation
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和宏 岸
通広 川口
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Nuflare Technology Inc
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Description

本発明は、荷電粒子ビーム照射装置に関する。 The present invention relates to a charged particle beam irradiation device.

従来、試料室内のステージに載置された試料に荷電粒子ビームを照射する荷電粒子ビーム照射装置においては、試料室を構成する真空容器が大気圧変動の影響によって微小に変形することで、ステージの位置精度が劣化することがあった。ステージの位置精度が劣化することで、試料への荷電粒子ビームの照射精度が低下してしまっていた。 Conventionally, in a charged particle beam irradiation device that irradiates a sample placed on a stage in a sample chamber with a charged particle beam, the vacuum container that constitutes the sample chamber can deform slightly due to the effects of atmospheric pressure fluctuations, which can degrade the positional accuracy of the stage. This deterioration in the positional accuracy of the stage reduces the accuracy of irradiation of the charged particle beam onto the sample.

このようなステージの位置精度の劣化を抑制するため、試料室を内側容器と外側容器との二重密閉容器構造に形成し、内側容器と外側容器との間の空間を一定の圧力に保持する荷電粒子ビーム照射装置が提案されている（例えば、特許文献１参照）。 In order to prevent such deterioration in the positional accuracy of the stage, a charged particle beam irradiation device has been proposed in which the sample chamber is formed into a double sealed container structure consisting of an inner container and an outer container, and the space between the inner container and the outer container is maintained at a constant pressure (see, for example, Patent Document 1).

特開２００３－１７３９４号公報JP 2003-17394 A

しかしながら、前述した二重密閉容器構造を有する荷電粒子ビーム照射装置では、装置が複雑化してしまい、また、内側容器および外側容器を開閉する機構を試料室の外側に設けなければならないため、装置が大型化してメンテナンス性が低下してしまう。 However, a charged particle beam irradiation device with the above-mentioned double sealed container structure is complicated, and the mechanisms for opening and closing the inner and outer containers must be provided outside the sample chamber, which makes the device larger and reduces maintainability.

本発明の目的は、装置の複雑化および大型化を抑制しつつ大気圧変動による荷電粒子ビームの照射精度の低下を抑えることができる荷電粒子ビーム照射装置を提供することにある。 The object of the present invention is to provide a charged particle beam irradiation device that can suppress the deterioration of the irradiation accuracy of the charged particle beam caused by atmospheric pressure fluctuations while suppressing the complexity and size of the device.

本発明の一態様である荷電粒子ビーム照射装置は、試料に荷電粒子ビームを照射する光学系が内部に配置された光学鏡筒と、上部に光学鏡筒が配置され、下部に開口が設けられ、内部に試料が収容される真空容器と、開口を塞ぐように真空容器の下部に取り付けられ、試料が載置されるステージが取り付けられる内蓋と、内蓋の外側において開口を塞ぐように真空容器の下部に取り付けられる外蓋と、を有する。 The charged particle beam irradiation device according to one aspect of the present invention has an optical barrel in which an optical system for irradiating a sample with a charged particle beam is disposed, a vacuum vessel in which the optical barrel is disposed at the top and which has an opening at the bottom and in which the sample is housed, an inner lid attached to the bottom of the vacuum vessel so as to cover the opening and on which a stage on which the sample is placed is attached, and an outer lid attached to the bottom of the vacuum vessel so as to cover the opening on the outside of the inner lid.

上述の荷電粒子ビーム照射装置において、ステージは、内蓋が真空容器の下部に取り付けられる際に開口を通して真空容器内に収容されてもよい。 In the above-mentioned charged particle beam irradiation device, the stage may be housed in the vacuum vessel through the opening when the inner lid is attached to the bottom of the vacuum vessel.

上述の荷電粒子ビーム照射装置において、光学鏡筒の中心軸は、試料室の気圧変形中心上に位置していてもよい。 In the above-mentioned charged particle beam irradiation device, the central axis of the optical column may be located on the center of air pressure deformation of the sample chamber.

上述の荷電粒子ビーム照射装置において、真空容器および外蓋は、室温で２×１０－６ ／Ｋ以下の線膨張係数を有する材料によって形成されていてもよい。 In the above-mentioned charged particle beam irradiation device, the vacuum vessel and the outer lid may be formed from a material having a linear expansion coefficient of 2×10 −6 / K or less at room temperature.

上述の荷電粒子ビーム照射装置において、ステージの平面積は、内蓋の平面積よりも小さく、外蓋の平面積は、内蓋の平面積よりも大きく、開口の内周面は、外蓋が当接した状態で取り付けられる取付面を有するように段差状に形成されていてもよい。 In the above-mentioned charged particle beam irradiation device, the planar area of the stage may be smaller than that of the inner lid, the planar area of the outer lid may be larger than that of the inner lid, and the inner peripheral surface of the opening may be formed in a stepped shape so as to have a mounting surface against which the outer lid is attached in abutting contact.

本発明によれば、装置の複雑化および大型化を抑制しつつ大気圧変動による荷電粒子ビームの照射精度の低下を抑えることができる。 The present invention makes it possible to suppress the deterioration of the irradiation accuracy of the charged particle beam caused by atmospheric pressure fluctuations while suppressing the increase in the complexity and size of the device.

本実施形態による荷電粒子ビーム照射装置の一例を示す図である。1 is a diagram showing an example of a charged particle beam irradiation apparatus according to an embodiment of the present invention; 本実施形態による荷電粒子ビーム照射装置において、試料の収容工程および内蓋の取り付け工程を示す図である。1A to 1C are diagrams showing a sample accommodation step and an inner lid attachment step in the charged particle beam irradiation device according to the present embodiment. 本実施形態による荷電粒子ビーム照射装置において、外蓋の取り付け工程を示す図である。11A to 11C are diagrams showing a process of attaching an outer lid in the charged particle beam irradiation device according to the present embodiment. 本実施形態による荷電粒子ビーム照射装置の作用を示す図である。5A to 5C are diagrams illustrating the operation of the charged particle beam irradiation apparatus according to the present embodiment.

以下、図面を参照して本発明に係る実施形態を説明する。実施形態は、本発明を限定するものではない。また、実施形態で参照する図面において、同一部分または同様な機能を有する部分には同一の符号または類似の符号を付し、その繰り返しの説明は省略する。 Below, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiment. In addition, in the drawings referred to in the embodiment, the same parts or parts having similar functions are given the same or similar symbols, and repeated explanations are omitted.

図１は、本実施形態による荷電粒子ビーム照射装置の一例を示す図である。図１の荷電粒子ビーム照射装置１は、電子銃から出射された荷電粒子ビームを、光学系を介して試料に照射するように構成されている。例えば、試料は、フォトリソグラフィに用いられるマスクであり、荷電粒子ビームは、マスク上にパターンを描画する。 Figure 1 is a diagram showing an example of a charged particle beam irradiation device according to this embodiment. The charged particle beam irradiation device 1 in Figure 1 is configured to irradiate a sample with a charged particle beam emitted from an electron gun via an optical system. For example, the sample is a mask used in photolithography, and the charged particle beam draws a pattern on the mask.

図１に示すように、荷電粒子ビーム照射装置１は、光学鏡筒の一例である電子鏡筒２と、試料室３と、ステージ４とを備える。 As shown in FIG. 1, the charged particle beam irradiation device 1 includes an electron lens barrel 2, which is an example of an optical lens barrel, a sample chamber 3, and a stage 4.

電子鏡筒２は、荷電粒子ビームを出射する電子銃および電子銃から出射された荷電粒子ビームを試料５に照射する光学系が内部に配置されている。光学系は、例えば、各種の偏向器やアパーチャ部材などである。 The electron tube 2 contains an electron gun that emits a charged particle beam and an optical system that irradiates the charged particle beam emitted from the electron gun onto the sample 5. The optical system includes, for example, various deflectors and aperture members.

試料室３は、内部に試料５が収容される中空の構造体である。試料室３は、真空容器３１と、内蓋３２と、外蓋３３とを有する。 The sample chamber 3 is a hollow structure in which the sample 5 is housed. The sample chamber 3 has a vacuum container 31, an inner lid 32, and an outer lid 33.

真空容器３１は、上部に電子鏡筒２が固定され、下部に開口３１ａが設けられ、内部に試料５が収容される容器である。真空容器３１は、試料５に荷電粒子ビームが照射される際に真空に保持される。真空容器３１は、図示しない真空ポンプによって排気されることで真空状態に保持される。真空容器３１は、例えば立方体状または直方体状である。真空容器３１は、円柱状であってもよい。真空容器３１の下部には、真空容器３１すなわち荷電粒子ビーム照射装置１を所定の固定面（床面）上に固定する固定具が設けられていてもよい。 The vacuum vessel 31 is a vessel to which the electron lens column 2 is fixed at the top, has an opening 31a at the bottom, and contains the sample 5 inside. The vacuum vessel 31 is maintained in a vacuum when the sample 5 is irradiated with the charged particle beam. The vacuum vessel 31 is maintained in a vacuum state by being evacuated by a vacuum pump (not shown). The vacuum vessel 31 is, for example, cubic or rectangular. The vacuum vessel 31 may also be cylindrical. A fixture may be provided at the bottom of the vacuum vessel 31 to fix the vacuum vessel 31, i.e., the charged particle beam irradiation device 1, to a predetermined fixed surface (floor surface).

内蓋３２は、開口３１ａを塞ぐように真空容器３１の下部に取り付けられる。なお、図１に示される例において、開口３１ａの上端は、内蓋３２の平面積（すなわち平面視したときの内蓋３２の面積）よりも開口面積が小さく形成されている。これにより、内蓋３２は、開口３１ａの上端の内周縁部３１ｂに下方から当接し、この内周縁部３１ｂにおいて真空容器３１の下部に取り付けられている。このような真空容器３１の下部への内蓋３２の取り付けは、例えば、図1に示すように、ネジ等の固定部材３４によって内周縁部３１ｂに内蓋３２を固定することで行ってもよい。これにより、簡易な構成によって真空容器３１の下部に内蓋３２を取り付けることができる。 The inner lid 32 is attached to the lower part of the vacuum vessel 31 so as to close the opening 31a. In the example shown in FIG. 1, the upper end of the opening 31a is formed with an opening area smaller than the planar area of the inner lid 32 (i.e., the area of the inner lid 32 when viewed from above). As a result, the inner lid 32 abuts against the inner peripheral edge 31b of the upper end of the opening 31a from below, and is attached to the lower part of the vacuum vessel 31 at this inner peripheral edge 31b. The inner lid 32 may be attached to the lower part of the vacuum vessel 31 in this manner by fixing the inner lid 32 to the inner peripheral edge 31b with a fixing member 34 such as a screw, for example, as shown in FIG. 1. This allows the inner lid 32 to be attached to the lower part of the vacuum vessel 31 with a simple configuration.

内蓋３２上には、試料５が載置されるステージ４が取り付けられる。ただし、ステージ４は、試料５上への荷電粒子ビームの照射位置を変更するために、内蓋３２上において所定の方向（例えば、Ｘ方向、Ｙ方向、θ方向）に移動することができる。ステージ４の平面積は内蓋３２の平面積や開口３１ａの上端の平面積よりも小さく、平面の形としてはすっぽり中に入る形となっている。ステージ４は、内蓋３２が真空容器３１の下部に取り付けられる際に開口３１ａを通して試料室３内に収容される。これにより、内蓋３２上にステージ４を容易に取り付けることができ、かつ、内蓋３２を真空容器３１の下部に取り付けるときに、開口３１ａを通してステージ４を開口３１ａや内周縁部３１ｂに当てることなく試料室３内に収容することができる。なお、図１に示される例において、ステージ４の平面積は電子鏡筒２の断面積よりも大きい。 On the inner lid 32, a stage 4 on which a sample 5 is placed is attached. However, the stage 4 can be moved in a predetermined direction (for example, the X direction, the Y direction, or the θ direction) on the inner lid 32 in order to change the irradiation position of the charged particle beam on the sample 5. The planar area of the stage 4 is smaller than the planar area of the inner lid 32 and the planar area of the upper end of the opening 31a, and the planar shape is such that it fits completely inside. The stage 4 is accommodated in the sample chamber 3 through the opening 31a when the inner lid 32 is attached to the lower part of the vacuum vessel 31. This makes it possible to easily attach the stage 4 on the inner lid 32, and when the inner lid 32 is attached to the lower part of the vacuum vessel 31, the stage 4 can be accommodated in the sample chamber 3 through the opening 31a without hitting the opening 31a or the inner peripheral part 31b. In the example shown in FIG. 1, the planar area of the stage 4 is larger than the cross-sectional area of the electron microscope column 2.

外蓋３３は、内蓋３２の外側（真空容器３１の容器としての外側）すなわち下側において開口３１ａを塞ぐように真空容器３１の下部に取り付けられている。外蓋３３の平面積は内蓋３２の平面積よりも大きい。開口３１ａの内周面は、外蓋３３が下方から当接した状態で取り付けられる水平な取付面３１ｃを有するように、段差状に形成されている。取付面３１ｃへの外蓋３３の取り付けは、例えば、図1に示すように、ネジ等の固定部材３５によって取付面３１ｃに外蓋３３を固定することで行ってもよい。これにより、簡易な構成によって真空容器３１の下部に外蓋３３を取り付けることができる。 The outer lid 33 is attached to the bottom of the vacuum vessel 31 so as to close the opening 31a on the outside of the inner lid 32 (the outside of the vacuum vessel 31 as a vessel), i.e., on the lower side. The planar area of the outer lid 33 is larger than that of the inner lid 32. The inner peripheral surface of the opening 31a is formed in a stepped shape so as to have a horizontal mounting surface 31c to which the outer lid 33 is attached in abutting contact from below. The outer lid 33 may be attached to the mounting surface 31c by fixing the outer lid 33 to the mounting surface 31c with a fixing member 35 such as a screw, for example, as shown in FIG. 1. This allows the outer lid 33 to be attached to the bottom of the vacuum vessel 31 with a simple configuration.

外蓋３３は、内蓋３２に対して上下方向に間隔を開けて配置される。外蓋３３と内蓋３２との間隔は、大気圧変動によって外蓋３３が変形したときに、変形した外蓋３３が内蓋３２に突き当たらない程度の間隔であることが好ましい。内蓋３２が大気圧に晒されることによって内蓋３２が大気圧変動の影響を受けないようにするため、内蓋３２と外蓋３３との間の空間は、図示しない真空ポンプによって排気されて真空状態に保持される。内蓋３２と外蓋３３との間の空間の真空状態は、真空容器３１内（すなわち真空容器３１と内蓋３２で閉じられた空間）の真空状態よりも低真空（高圧）であってもよい。あるいは、真空容器３１内と、内蓋３２と外蓋３３との間の空間とを連通するように内蓋３２に貫通孔を設け、真空容器３１内および内蓋３２と外蓋３３との間の空間を共通の真空ポンプで排気してもよい。 The outer lid 33 is disposed at a distance from the inner lid 32 in the vertical direction. The distance between the outer lid 33 and the inner lid 32 is preferably such that when the outer lid 33 is deformed due to atmospheric pressure fluctuations, the deformed outer lid 33 does not hit the inner lid 32. In order to prevent the inner lid 32 from being affected by atmospheric pressure fluctuations due to exposure of the inner lid 32 to atmospheric pressure, the space between the inner lid 32 and the outer lid 33 is evacuated by a vacuum pump (not shown) and maintained in a vacuum state. The vacuum state of the space between the inner lid 32 and the outer lid 33 may be lower vacuum (higher pressure) than the vacuum state inside the vacuum container 31 (i.e., the space closed by the vacuum container 31 and the inner lid 32). Alternatively, a through hole may be provided in the inner lid 32 to communicate with the inside of the vacuum container 31 and the space between the inner lid 32 and the outer lid 33, and the inside of the vacuum container 31 and the space between the inner lid 32 and the outer lid 33 may be evacuated by a common vacuum pump.

このように、本実施形態による荷電粒子ビーム照射装置１は、試料室３が、内蓋３２および外蓋３３による二重蓋構造を有する。二重蓋構造を有することで、装置の複雑化および大型化を抑制しつつ大気圧変動による荷電粒子ビームの照射精度の低下を抑えることができる。 As described above, in the charged particle beam irradiation device 1 according to this embodiment, the sample chamber 3 has a double lid structure consisting of an inner lid 32 and an outer lid 33. By having a double lid structure, it is possible to suppress the deterioration of the irradiation accuracy of the charged particle beam due to atmospheric pressure fluctuations while suppressing the increase in complexity and size of the device.

なお、真空容器３１および外蓋３３は、室温で２×１０－６ ／Ｋ以下の線膨張係数を有する材料によって形成されていてもよい。これにより、温度変化にともなう真空容器３１および外蓋３３の変形を抑制することができる。 The vacuum vessel 31 and the outer lid 33 may be formed from a material having a linear expansion coefficient of 2×10 −6 / K or less at room temperature, which can suppress deformation of the vacuum vessel 31 and the outer lid 33 due to temperature changes.

また、外蓋３３は、真空容器３１を真空密閉する密閉構造を有していてもよい。密閉構造は、例えば、Ｏ－リングやシール材であってもよい。これにより、真空容器３１の密閉性をより有効に確保して大気圧変動による荷電粒子ビームの照射精度の低下をより効果的に抑えることができる。 The outer lid 33 may also have a sealing structure that vacuum-seals the vacuum vessel 31. The sealing structure may be, for example, an O-ring or a sealant. This more effectively ensures the airtightness of the vacuum vessel 31, and more effectively prevents a decrease in the irradiation accuracy of the charged particle beam due to atmospheric pressure fluctuations.

また、電子鏡筒２の中心軸は、真空容器３１の気圧変形中心上に位置していてもよい。気圧変形中心とは、真空容器３１のうち大気圧変動によるたわみ（すなわち、変形量）が最大となる点である。例えば、気圧変形中心は、真空容器３１における電子鏡筒２の取付面（すなわち、真空容器３１の上面）のうち、大気圧変動によるたわみが最大となる点であってもよい。また、真空容器３１が立方体、直方体または円柱などの単純形状の場合、気圧変形中心は、真空容器３１の重心であってもよい。電子鏡筒２の中心軸が真空容器３１の気圧変形中心上に位置することで、電子鏡筒２を試料室３の気圧変形が小さい位置に配置することができる。これにより、試料室３の気圧変形にともなう電子鏡筒２の倒れを防止することができる。 The central axis of the electron lens barrel 2 may be located on the center of air pressure deformation of the vacuum vessel 31. The center of air pressure deformation is the point of the vacuum vessel 31 where the deflection (i.e., the amount of deformation) due to atmospheric pressure fluctuations is the maximum. For example, the center of air pressure deformation may be the point of the mounting surface of the electron lens barrel 2 in the vacuum vessel 31 (i.e., the upper surface of the vacuum vessel 31) where the deflection due to atmospheric pressure fluctuations is the maximum. In addition, when the vacuum vessel 31 has a simple shape such as a cube, a rectangular parallelepiped, or a cylinder, the center of air pressure deformation may be the center of gravity of the vacuum vessel 31. By positioning the central axis of the electron lens barrel 2 on the center of air pressure deformation of the vacuum vessel 31, the electron lens barrel 2 can be placed at a position where the air pressure deformation of the sample chamber 3 is small. This makes it possible to prevent the electron lens barrel 2 from falling over due to the air pressure deformation of the sample chamber 3.

図２は、本実施形態による荷電粒子ビーム照射装置１において、試料５の収容工程および内蓋３２の取り付け工程を示す図である。以上のように構成された荷電粒子ビーム照射装置１を使用する際には、図２に示すように、内蓋３２上にステージ４を取り付け、かつ、ステージ４上に試料５を載置した後に、真空容器３１の開口３１ａを通して内蓋３２を真空容器３１の下部に取り付ける。このとき、開口３１ａを通して内蓋３２上のステージ４を開口３１ａや内周縁部３１ｂに当てることなく真空容器３１内に収容することができる。 Figure 2 is a diagram showing the process of storing the sample 5 and the process of attaching the inner lid 32 in the charged particle beam irradiation device 1 according to this embodiment. When using the charged particle beam irradiation device 1 configured as described above, as shown in Figure 2, the stage 4 is attached to the inner lid 32, the sample 5 is placed on the stage 4, and then the inner lid 32 is attached to the bottom of the vacuum container 31 through the opening 31a of the vacuum container 31. At this time, the stage 4 on the inner lid 32 can be stored in the vacuum container 31 through the opening 31a without hitting the opening 31a or the inner peripheral portion 31b.

図３は、本実施形態による荷電粒子ビーム照射装置１において、外蓋３３の取り付け工程を示す図である。真空容器３１の下部に内蓋３２を取り付けた後、図３に示すように、内蓋３２の外側（下側）の開口３１ａ内に設けられた取付面３１ｃに外蓋３３を下方から当接させ、取付面３１ｃに外蓋３３を取り付ける。 Figure 3 is a diagram showing the process of attaching the outer lid 33 in the charged particle beam irradiation device 1 according to this embodiment. After the inner lid 32 is attached to the bottom of the vacuum vessel 31, as shown in Figure 3, the outer lid 33 is abutted from below against the attachment surface 31c provided in the opening 31a on the outside (lower side) of the inner lid 32, and the outer lid 33 is attached to the attachment surface 31c.

このようにして、本実施形態による荷電粒子ビーム照射装置１は、真空容器３１を開閉するための大型で複雑な機構を要することなく、真空容器３１の下部内に収まるような内蓋３２および外蓋３３からなる簡易かつコンパクトな二重蓋構造によって試料室３内に試料５を密閉状態に収容することができる。 In this way, the charged particle beam irradiation device 1 according to this embodiment can accommodate the sample 5 in a sealed state in the sample chamber 3 using a simple and compact double lid structure consisting of an inner lid 32 and an outer lid 33 that fit within the lower part of the vacuum vessel 31, without requiring a large and complex mechanism for opening and closing the vacuum vessel 31.

図４は、本実施形態による荷電粒子ビーム照射装置１の作用を示す図である。また、図４に示すように、本実施形態による荷電粒子ビーム照射装置１は、大気圧変動が生じた場合に、真空容器３１および外蓋３３は変形するが、内蓋３２は殆ど変形しない。これは、外蓋３３が大気圧に晒されるのに対して、内蓋３２は真空内に位置して大気圧に晒されないためである。このように、大気圧変動にともなう内蓋３２の変形を抑えることができるので、内蓋３２上に取り付けられたステージ４の位置精度の低下を抑制することができる。ステージ４の位置精度の低下が抑制されることで、大気圧変動による荷電粒子ビームの照射精度の低下を抑えることができる。 Figure 4 is a diagram showing the operation of the charged particle beam irradiation device 1 according to this embodiment. As shown in Figure 4, in the charged particle beam irradiation device 1 according to this embodiment, when atmospheric pressure fluctuations occur, the vacuum container 31 and the outer lid 33 are deformed, but the inner lid 32 is hardly deformed. This is because the outer lid 33 is exposed to atmospheric pressure, whereas the inner lid 32 is located in a vacuum and is not exposed to atmospheric pressure. In this way, deformation of the inner lid 32 due to atmospheric pressure fluctuations can be suppressed, and therefore the deterioration of the positional accuracy of the stage 4 attached on the inner lid 32 can be suppressed. By suppressing the deterioration of the positional accuracy of the stage 4, the deterioration of the irradiation accuracy of the charged particle beam due to atmospheric pressure fluctuations can be suppressed.

以上述べたように、本実施形態によれば、試料室３が内蓋３２および外蓋３３による二重蓋構造を有することで、装置の複雑化および大型化を抑制しつつ大気圧変動による荷電粒子ビームの照射精度の低下を抑えることができる。 As described above, according to this embodiment, the sample chamber 3 has a double lid structure consisting of an inner lid 32 and an outer lid 33, which makes it possible to suppress the deterioration of the irradiation accuracy of the charged particle beam due to atmospheric pressure fluctuations while suppressing the complexity and size of the device.

上述の実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。 The above-described embodiments are presented as examples and are not intended to limit the scope of the invention. The embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are within the scope of the invention and its equivalents as set forth in the claims, as well as the scope and spirit of the invention.

１ 荷電粒子ビーム照射装置
２ 電子鏡筒
３ 試料室
３１ 真空容器
３１ａ 開口
３２ 内蓋
３３ 外蓋
５ 試料 1 Charged particle beam irradiation device 2 Electron lens column 3 Sample chamber 31 Vacuum container 31a Opening 32 Inner lid 33 Outer lid 5 Sample

Claims (6)

試料に荷電粒子ビームを照射する光学系が内部に配置された光学鏡筒と、
上部に前記光学鏡筒が配置され、下部に開口が設けられ、内部に前記試料が収容される真空容器と、
前記開口を塞ぐように前記真空容器の下部内に取り付けられ、前記試料が載置されるステージが取り付けられる内蓋と、
前記内蓋の外側において前記開口を塞ぐように前記真空容器の下部内に取り付けられる外蓋と、を有し、
前記外蓋の平面積は、前記内蓋の平面積よりも大きいことを特徴とする荷電粒子ビーム照射装置。 an optical column having an optical system disposed therein for irradiating a sample with a charged particle beam;
a vacuum vessel having an upper portion in which the optical column is disposed, an opening provided at a lower portion, and in which the sample is accommodated;
an inner lid that is attached to a lower portion of the vacuum vessel so as to close the opening and on which a stage on which the sample is placed is attached;
an outer lid attached to a lower part of the vacuum vessel so as to close the opening on the outside of the inner lid ;
13. A charged particle beam irradiation device, comprising : a first lid and a second lid; a second lid and a third lid; 前記ステージは、前記内蓋が前記真空容器の下部内に取り付けられる際に前記開口を通して前記真空容器内に収容されることを特徴とする請求項１に記載の荷電粒子ビーム照射装置。 2. The charged particle beam irradiation device according to claim 1, wherein the stage is accommodated in the vacuum vessel through the opening when the inner lid is attached to the lower part of the vacuum vessel. 前記光学鏡筒の中心軸は、前記真空容器の気圧変形中心上に位置することを特徴とする請求項１～２のいずれか１項に記載の荷電粒子ビーム照射装置。 The charged particle beam irradiation device according to any one of claims 1 to 2, characterized in that the central axis of the optical barrel is located on the center of air pressure deformation of the vacuum vessel. 前記真空容器および前記外蓋は、２×１０－６ ／Ｋ以下の線膨張係数を有する材料によって形成されていることを特徴とする請求項１～３のいずれか１項に記載の荷電粒子ビーム照射装置。 4. The charged particle beam irradiation device according to claim 1, wherein the vacuum vessel and the outer lid are formed from a material having a linear expansion coefficient of 2×10 −6 / K or less. 前記ステージの平面積は、前記内蓋の平面積よりも小さく、
前記開口の内周面は、前記外蓋が下方から当接した状態で取り付けられる取付面を有するように段差状に形成されていることを特徴とする請求項１～４のいずれか１項に記載の荷電粒子ビーム照射装置。 The planar area of the stage is smaller than the planar area of the inner lid ,
The charged particle beam irradiation device according to any one of claims 1 to 4, characterized in that an inner surface of the opening is formed in a stepped shape so as to have a mounting surface to which the outer lid is attached in abutting contact from below. 前記内蓋は、前記開口の上端の内周縁部に下方から当接した状態で取り付けられることで、前記真空容器の下部内に取り付けられることを特徴とする請求項１～５のいずれか１項に記載の荷電粒子ビーム照射装置。The charged particle beam irradiation device according to any one of claims 1 to 5, characterized in that the inner lid is attached to the lower part of the vacuum vessel by being attached in abutting contact with the inner peripheral edge of the upper end of the opening from below.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284219A (en) 2000-03-30 2001-10-12 Toshiba Corp Charged particle beam device and sample chamber therefor
JP2004237262A (en) 2003-02-10 2004-08-26 Sumitomo Heavy Ind Ltd Airtight treating device
JP2005019708A (en) 2003-06-26 2005-01-20 Sumitomo Heavy Ind Ltd Vacuum equipment and electronic beam proximity exposure device
JP2010056390A (en) 2008-08-29 2010-03-11 Nuflare Technology Inc Charged particle beam drawing apparatus and method of designing the same
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