JP7478815B2 - ディープラーニング及びｅｆｇテクニック方法による導電型酸化ガリウムの品質予測方法、製造方法及びそのシステム - Google Patents
ディープラーニング及びｅｆｇテクニック方法による導電型酸化ガリウムの品質予測方法、製造方法及びそのシステム Download PDFInfo
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- JP7478815B2 JP7478815B2 JP2022520438A JP2022520438A JP7478815B2 JP 7478815 B2 JP7478815 B2 JP 7478815B2 JP 2022520438 A JP2022520438 A JP 2022520438A JP 2022520438 A JP2022520438 A JP 2022520438A JP 7478815 B2 JP7478815 B2 JP 7478815B2
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims description 149
- 229910001195 gallium oxide Inorganic materials 0.000 title claims description 149
- 238000000034 method Methods 0.000 title claims description 146
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 238000013135 deep learning Methods 0.000 title claims description 33
- 239000013078 crystal Substances 0.000 claims description 309
- 238000002360 preparation method Methods 0.000 claims description 155
- 238000012549 training Methods 0.000 claims description 136
- 238000003062 neural network model Methods 0.000 claims description 100
- 239000012535 impurity Substances 0.000 claims description 41
- 239000013598 vector Substances 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 230000007613 environmental effect Effects 0.000 claims description 28
- 230000006698 induction Effects 0.000 claims description 26
- 238000007781 pre-processing Methods 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 11
- 238000004590 computer program Methods 0.000 claims description 10
- 230000008602 contraction Effects 0.000 claims description 10
- 238000000605 extraction Methods 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 241001632422 Radiola linoides Species 0.000 claims 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 48
- 238000009413 insulation Methods 0.000 description 28
- 230000006870 function Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000011176 pooling Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
- G16C20/30—Prediction of properties of chemical compounds, compositions or mixtures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
- G16C20/10—Analysis or design of chemical reactions, syntheses or processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
- G16C20/70—Machine learning, data mining or chemometrics
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C60/00—Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Computing Systems (AREA)
- Theoretical Computer Science (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Bioinformatics & Computational Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Databases & Information Systems (AREA)
- Health & Medical Sciences (AREA)
- Artificial Intelligence (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- General Health & Medical Sciences (AREA)
- Medical Informatics (AREA)
- Software Systems (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011638965.5A CN112837758A (zh) | 2020-12-31 | 2020-12-31 | 一种基于深度学习和导模法的导电型氧化镓的质量预测方法、制备方法及系统 |
| CN202011638965.5 | 2020-12-31 | ||
| PCT/CN2021/076070 WO2022141764A1 (zh) | 2020-12-31 | 2021-02-08 | 一种基于深度学习和导模法的导电型氧化镓的质量预测方法、制备方法及系统 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023512382A JP2023512382A (ja) | 2023-03-27 |
| JP7478815B2 true JP7478815B2 (ja) | 2024-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022520438A Active JP7478815B2 (ja) | 2020-12-31 | 2021-02-08 | ディープラーニング及びｅｆｇテクニック方法による導電型酸化ガリウムの品質予測方法、製造方法及びそのシステム |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP4047608A4 (de) |
| JP (1) | JP7478815B2 (de) |
| CN (1) | CN112837758A (de) |
| WO (1) | WO2022141764A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116187112B (zh) * | 2023-05-04 | 2023-08-11 | 北京大学 | 基于大数据的提高单晶生长热对流分布均匀的方法及系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006024195A (ja) | 2004-06-03 | 2006-01-26 | National Cheng Kung Univ | 生産工程の品質予測システムおよびその方法 |
| JP2016013970A (ja) | 2015-09-02 | 2016-01-28 | 株式会社タムラ製作所 | β−Ｇａ２Ｏ３系単結晶基板の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2754736A4 (de) * | 2011-09-08 | 2015-06-24 | Tamura Seisakusho Kk | Kristallschichtstruktur und verfahren zu ihrer herstellung |
| CN103290471A (zh) * | 2013-06-08 | 2013-09-11 | 中国科学院上海光学精密机械研究所 | 导模法生长片状氧化镓晶体的方法 |
| EP3042986A1 (de) * | 2015-01-09 | 2016-07-13 | Forschungsverbund Berlin e.V. | Verfahren zur Herstellung des ß-Ga2O3 Einkristalle, dem in einem Metalltiegel enthaltenen ist, durch Erstarrungs des Schmelzs und dem Sauerstoffsdruck. |
| US20200294630A1 (en) * | 2019-03-12 | 2020-09-17 | California Institute Of Technology | Systems and Methods for Determining Molecular Structures with Molecular-Orbital-Based Features |
| CN111695287B (zh) * | 2020-04-22 | 2023-04-25 | 山东天岳先进科技股份有限公司 | 一种预测SiC单晶炉内整体温度场的方法及设备 |
-
2020
- 2020-12-31 CN CN202011638965.5A patent/CN112837758A/zh active Pending
-
2021
- 2021-02-08 WO PCT/CN2021/076070 patent/WO2022141764A1/zh unknown
- 2021-02-08 JP JP2022520438A patent/JP7478815B2/ja active Active
- 2021-02-08 EP EP21870468.2A patent/EP4047608A4/de active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006024195A (ja) | 2004-06-03 | 2006-01-26 | National Cheng Kung Univ | 生産工程の品質予測システムおよびその方法 |
| JP2016013970A (ja) | 2015-09-02 | 2016-01-28 | 株式会社タムラ製作所 | β−Ｇａ２Ｏ３系単結晶基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112837758A (zh) | 2021-05-25 |
| JP2023512382A (ja) | 2023-03-27 |
| WO2022141764A1 (zh) | 2022-07-07 |
| EP4047608A4 (de) | 2023-04-12 |
| EP4047608A1 (de) | 2022-08-24 |
| US20230162819A1 (en) | 2023-05-25 |
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