JP7468241B2 - Film forming apparatus, film forming method, and program - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method, and a program.

A deposition apparatus is known that has multiple electrodes inside a vacuum chamber, and generates a discharge by applying a voltage between the electrodes to perform sputtering. In such a deposition apparatus, a target and an object to be deposited are placed inside the vacuum chamber. Particles are emitted from the target in the form of atoms or molecules due to collisions of ions generated by the discharge, and these particles or particles obtained by reaction of these particles with a gas introduced into the vacuum chamber enter the object to be deposited, forming a film on the surface of the object to be deposited.

In film formation equipment, maintenance such as target replacement is performed to prevent deterioration of the quality of the film being formed. Predicting the timing of maintenance and performing maintenance at the appropriate time is important for maintaining the quality of the film being formed. Patent Document 1 lists the number of occurrences of abnormal arc discharge as important information for knowing when to replace the target.

Japanese Patent Application Laid-Open No. 10-88338

Accurately predicts maintenance timing for deposition equipment based on deposition conditions.

A first aspect of the present invention relates to a film formation apparatus comprising: a film formation unit having a plurality of electrodes including at least a first electrode and a second electrode electrically connectable to a target; and a voltage application unit that applies a DC voltage between the first electrode and the second electrode and temporarily stops the application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target, the film formation apparatus further comprising an information generation unit that generates information regarding the timing of maintenance of the film formation apparatus based on at least one of the number of times, frequency, and intervals of the stops.
A second aspect of the present invention relates to a film formation method using a film formation apparatus including a film formation unit having a plurality of electrodes including at least a first electrode and a second electrode electrically connectable to a target, the film formation method comprising: applying a DC voltage between the first electrode and the second electrode; temporarily stopping the application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target; and generating information regarding the timing of maintenance of the film formation apparatus based on at least one of the number of times, frequency, and intervals of the stopping.
A third aspect of the present invention relates to a program for causing a processing device of a film formation apparatus having a film formation unit with a plurality of electrodes including at least a first electrode and a second electrode electrically connectable to a target to perform processing, the processing comprising a voltage control process for applying a DC voltage between the first electrode and the second electrode and temporarily stopping the application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target, and an information generation process for generating information regarding the timing of maintenance of the film formation apparatus based on at least one of the number of times, frequency and intervals of the stopping.

The present invention makes it possible to accurately predict the timing of maintenance of a film forming device according to film forming conditions, etc.

FIG. 1 is a conceptual diagram showing the configuration of a film forming apparatus according to one embodiment. FIG. 2 is a conceptual diagram showing the configuration of the control unit. FIG. 3 is a flowchart showing the flow of a film forming method according to one embodiment. FIG. 4 is a conceptual diagram showing the configuration of a film forming apparatus according to a modified example. FIG. 5 is a conceptual diagram for explaining the provision of a program.

Below, we will explain the form for implementing the present invention with reference to the drawings.

-First embodiment-
1 is a conceptual diagram showing the configuration of the film forming apparatus of this embodiment. The film forming apparatus 1 includes a vacuum container 10, a first electrode 21, a second electrode 22, a voltage application unit 30, a vacuum exhaust system 40, a gas supply unit 50, a display unit 60, and a control unit 100. The voltage application unit 30 includes a DC power supply unit 31 and a stop unit 32. A film forming target Wp is disposed on the second electrode side of the first electrode 21. A target T is disposed on the first electrode side of the second electrode 22. The second electrode 22 and the target T are electrically connected to each other and constitute a target electrode 220.

The vacuum vessel 10 functions as a film formation section in which a film is formed. The vacuum vessel 10 has a first electrode 21 and a second electrode 22 inside. During film formation, a target T and a film formation target Wp are placed inside the vacuum vessel 10. The vacuum vessel 10 is grounded by a ground section E1.

In the following embodiment, the film forming apparatus 1 is a DC sputtering apparatus capable of applying a DC voltage between the first electrode 21, which is an anode, and the second electrode 22, which is a cathode. The first electrode 21 is grounded by the grounding section E2. The second electrode 22 is disposed opposite the first electrode 21 and functions as an opposing electrode of the first electrode 21. The second electrode 22 is installed in the vacuum vessel 10 via an insulating member (not shown) and is electrically connected to the voltage application section 30. The first electrode 21 and the second electrode 22 are preferably flat plate electrodes disposed approximately parallel to each other, but as long as a film can be formed on the film forming target Wp with the desired accuracy, their shapes, positions, etc. are not particularly limited.

The voltage application unit 30 applies a voltage between the first electrode 21 and the second electrode 22. The DC power supply unit 31 includes a DC power supply and applies a DC voltage between the first electrode 21 and the second electrode 22. In the example of FIG. 1, the DC power supply unit 31, which is grounded by the ground unit E3, applies a negative voltage of several hundred volts to the second electrode 22. Since the first electrode 21 is also grounded, a negative voltage of several hundred volts is applied to the second electrode 22 relative to the first electrode 21.

A voltage applied between the first electrode 21 and the second electrode 22 generates a glow discharge inside the vacuum vessel 10. The glow discharge ionizes an inert gas, such as argon gas, introduced into the vacuum vessel 10 from the gas supply unit 50 described later. The ionized inert gas collides with the target T. This collision causes the target material constituting the target T to be ejected from the target T in the form of atoms. These atoms are called target atoms. The target atoms enter the film-forming target Wp and form a film on its surface. In the case of reactive sputtering, a reactive gas, such as oxygen gas, introduced into the vacuum vessel 10 from the gas supply unit 50 described later, reacts with the target atoms, and the molecules produced by this reaction enter the film-forming target Wp and form a film on its surface.

The stop unit 32 includes an arc counting device, and temporarily stops the application of the DC voltage generated between the first electrode 21 and the second electrode 22 based on at least one of the current and voltage measured in the circuit electrically connected to the target T. Here, the measured current and voltage are called the measured current and the measured voltage, respectively. The stop unit 32 detects a change in the measured current or the measured voltage that occurs before an abnormal discharge occurs inside the vacuum vessel 10, and temporarily stops the output of the DC power supply unit 31 to suppress the abnormal discharge. The method by which the stop unit 32 stops the output of the DC power supply unit 31 is not particularly limited, and for example, the current flowing between the DC power supply unit 31 and the target electrode 220 can be interrupted. Here, the temporary stop of the output of the DC power supply unit 31 also includes reducing the voltage between the first electrode 21 and the second electrode 22 to a degree that can suppress the abnormal discharge.

The abnormal discharge referred to here is, for example, an arc discharge. During an arc discharge, energy is concentrated locally on the target T, causing clumps of particles to scatter from the target T, adversely affecting the performance of the film formed on the film-forming object Wp.

During an abnormal discharge such as an arc discharge, the resistance between the first electrode 21 and the second electrode 22 decreases, creating a state similar to a short circuit. Just before such a discharge, the resistance decreases. Because a negative voltage is applied to the second electrode 22 relative to the first electrode 21, the decrease in resistance is accompanied by a change in the current or voltage of the target electrode 220. Therefore, by measuring the current or voltage at a location electrically connected to the target T, such as the target electrode 220 or its vicinity, it is possible to detect in advance whether the deposition apparatus 1 is in a state where an arc discharge is likely to occur.

The length of time for which the output of the DC power supply unit 31 is temporarily stopped by the stop unit 32 is not particularly limited, but can be, for example, several msec. The number of times that the output of the DC power supply unit 31 is temporarily stopped by the stop unit 32 is called the number of stops. This number of stops is stored in a storage medium (not shown) connected so as to be accessible from the control unit 100. The number of stops can be reset to 0 each time a film is formed, but is not limited to this.

The vacuum exhaust system 40 reduces the pressure inside the vacuum vessel 10 to a pressure of 10 Pa or less. The configuration of the vacuum exhaust system 40 is not particularly limited as long as it can maintain the vacuum vessel 10 at the desired pressure. For example, the vacuum exhaust system 40 can include a turbomolecular pump and an auxiliary pump such as a rotary pump. For example, the vacuum exhaust system 40 reduces (roughly pumps) the pressure inside the vacuum vessel 10 to about 100 Pa using the auxiliary pump, and then reduces the pressure to 10 Pa or less using the turbomolecular pump.

The gas supply unit 50 supplies gases required for the film formation process to the inside of the vacuum vessel 10. The gas supply unit 50 includes a gas storage vessel (not shown) and a flow rate control valve (not shown) for controlling the flow rate of gas introduced from the gas storage vessel to the vacuum vessel 10. The gas supply unit 50 introduces into the vacuum vessel 10 an inert gas such as argon, a reactive gas such as oxygen gas that reacts with target atoms.
A gas supply unit for introducing a reaction gas into the vacuum vessel 10 may be provided separately from the gas supply unit 50 .

The display unit 60 is equipped with a display device such as a display monitor, and displays the maintenance information described below and the analysis conditions of the film forming device 1.

The control unit 100 is equipped with a processing device such as a Programmable Logic Controller (PLC) for executing the operation of the film forming apparatus 1, a storage medium on which a program is stored, and a memory for temporarily storing data necessary for operation, and is the main body that controls the operation of each part of the film forming apparatus 1.
It should be noted that the physical configuration of the control unit 100 is not particularly limited as long as it is capable of performing the processes of the control unit 100 in the following embodiments.

Figure 2 is a conceptual diagram showing the configuration of the control unit 100. The control unit 100 includes a voltage control unit 110, an information generation unit 120, and a display control unit 130.

The voltage control unit 110 controls the voltage application unit 30 and controls the DC voltage applied between the first electrode 21 and the second electrode 22. The voltage control unit 110 receives the measured current or voltage in the circuit connected to the target T, measured by an ammeter or voltmeter (not shown). The voltage control unit 110 detects a predetermined change in the measured current or voltage. For example, the voltage control unit 110 detects that the measured voltage of the target electrode 220 is equal to or greater than a predetermined threshold. In this case, the voltage control unit 110 determines that abnormal discharge is likely to occur, sends a control signal to the stop unit 32 to cut off the output from the DC discharge unit 31, and further accesses the storage medium in which the number of stops is stored to increment the number of stops by one.

The information generating unit 120 generates information regarding the timing of maintenance of the film forming apparatus 1 based on the added number of stops. Hereinafter, this information will be referred to as maintenance information. There is no particular limit to the way in which the maintenance information is expressed as long as it can indicate the timing of maintenance. For example, the maintenance information can be binary information, with 1 indicating that the maintenance timing is approaching and 0 indicating that the maintenance timing is not approaching. In addition, the cases in which maintenance is necessary may be indicated by numbers, with 2 being indicated, or each of these cases may be indicated by a symbol. The maintenance information may indicate within how many days maintenance should be performed. Alternatively, the maintenance information may indicate information about maintenance in text, etc.

The maintenance in the maintenance information is not particularly limited, but may include, for example, performing a glow discharge at a specified output and colliding ions generated by the glow discharge with the surface of the target T to clean it, replacing the target, or replacing the adhesion protection plate, etc., as appropriate.

When the number of stoppages satisfies a condition based on a predetermined threshold, the information generating unit 120 generates maintenance information indicating that the time for maintenance is approaching. This threshold is called the maintenance threshold. The maintenance threshold is set in advance based on the relationship between the maintenance time and the number of stoppages, and is stored in a storage medium (not shown) that can be referenced by the control unit 100. For example, when the number of stoppages in one film formation or one day of use of the film formation apparatus 1 exceeds the maintenance threshold, the information generating unit 120 generates maintenance information indicating that the time for maintenance is approaching. The maintenance information can be generated after the film formation is completed, but is not limited to this.

The information generating unit 120 is set so that the method of deriving the maintenance timing differs based on the film forming conditions. Here, deriving the maintenance timing may appropriately include determining whether the maintenance timing is approaching or not, determining whether maintenance is necessary or not, etc. For example, the above-mentioned maintenance thresholds that differ depending on the film forming conditions are set in a storage medium that can be referenced by the control unit 100. The information generating unit 120 refers to the maintenance thresholds that correspond to the film forming conditions set by the user of the film forming apparatus 1 (hereinafter simply referred to as the user).

Examples of the deposition conditions can be the type and conductivity of the target material that constitutes the target T, or the type of reactive gas. These can be combined to set the maintenance threshold for different cases.

When the method of deriving the maintenance timing differs depending on the type of target material, a corresponding maintenance threshold is set for each type of target material. The information generating unit 120 acquires the type of target T from the film formation conditions set by the user. The information generating unit 120 acquires a maintenance threshold corresponding to the acquired type of target T, which is stored in a storage medium that can be referenced by the control unit 100. When the number of stops exceeds the maintenance threshold, the information generating unit 120 can generate maintenance information indicating that the time for maintenance, particularly the time to replace the target, is approaching.

When the method of deriving the maintenance timing differs depending on the conductivity of the target material, a different maintenance threshold can be set depending on the conductivity of the target material. The information generating unit 120 acquires information about the conductivity of the target T from a storage medium that can be referenced by the control unit 100 based on the film formation conditions set by the user. The information generating unit 120 acquires a maintenance threshold corresponding to the conductivity that is stored in a storage medium that can be referenced by the control unit 100. When the number of stops exceeds the maintenance threshold, the information generating unit 120 can generate maintenance information indicating that the time for maintenance, particularly the time to replace the target, is approaching.

When the method of deriving the maintenance timing differs depending on the type of reactive gas, a corresponding maintenance threshold is set for each type of reactive gas. The information generating unit 120 acquires the type of reactive gas from the film formation conditions set by the user. The information generating unit 120 acquires the maintenance threshold corresponding to the type of reactive gas stored in a storage medium that can be referenced by the control unit 100. When the number of stops exceeds the maintenance threshold, the information generating unit 120 can generate maintenance information indicating that the time for maintenance is approaching.

The display control unit 130 controls the display unit 60 to display the maintenance information and at least one of a notice and a warning based on the maintenance information on the display screen of the display unit 60. The display control unit 130 refers to the maintenance information, and when the maintenance information indicates, for example, that the time for maintenance is approaching, the display control unit 130 displays a notice indicating this on the display screen. When the maintenance information indicates that maintenance is necessary, the display control unit 130 displays a warning indicating this on the display screen. When the maintenance information is expressed in text, the display control unit 130 may display the text of the maintenance information as is.

Figure 3 is a flow chart showing the flow of the film formation method according to this embodiment. This film formation method is performed by the film formation apparatus 1. In step S101, the vacuum exhaust system 40 reduces the pressure inside the vacuum vessel 10 into which the film formation target Wp has been carried. When step S101 is completed, step S103 is started. In step S103, the gas supply unit 50 introduces an inert gas into the vacuum vessel 10. When step S103 is completed, step S105 is started.

In step S105, the voltage application unit 30 applies a DC voltage to the first electrode 21 and the second electrode 22, which are electrodes for sputtering, the stop unit 32 stops the output based on the measured current or voltage, and the control unit 100 records the number of stops. When step S105 is completed, step S107 is started. In step S107, the control unit 110 ends the film formation process by, for example, ending the application of the DC voltage by the voltage application unit 30. When step S107 is completed, step S109 is started.

In step S109, the information generation unit 120 generates maintenance information. When step S109 is completed, step S111 is started. In step S111, the display control unit 130 controls the display unit 60 to display the maintenance information. When step S111 is completed, the process ends.

The film forming apparatus 1 of this embodiment can accurately predict the timing of maintenance. The film forming apparatus 1 of this embodiment is particularly effective when the vacuum vessel 10 is open to the atmosphere for a long time and the target T and the like placed inside the film forming apparatus 1 are prone to deterioration, as it can detect the effects of deterioration. From this perspective, the film forming apparatus 1 can suppress deterioration particularly effectively when there is no antechamber (load lock chamber) between the vacuum vessel 10 and the atmosphere.

The following modifications are also within the scope of the present invention and can be combined with the above-described embodiment. In the following modifications, parts and the like that have the same structure and function as the above-described embodiment will be referred to by the same reference numerals and descriptions will be omitted as appropriate.

(Variation 1)
In the above-described embodiment, the film forming apparatus may include a CVD (Chemical Vapor Deposition) electrode inside the vacuum chamber. In such a case, the target T and the like arranged inside the film forming apparatus 1 are likely to deteriorate due to the influence of CVD, but the deterioration can be particularly effectively suppressed by the method of the above-described embodiment.

Figure 4 is a conceptual diagram showing the configuration of the film forming apparatus 2 of this modified example. The film forming apparatus 2 has a configuration partially similar to that of the film forming apparatus 1 of the above-mentioned embodiment. However, the film forming apparatus 2 differs from the film forming apparatus 1 in that it includes a CVD electrode 34, a matcher 35 for applying a high frequency to the CVD electrode 34, and a high frequency power supply 36, and that the first electrode 21a is movable in the left-right direction in the figure. Furthermore, the film forming apparatus 2 includes a vacuum vessel 10a instead of the vacuum vessel 10. Moreover, the film forming apparatus 2 includes a gas supply unit 50a instead of the gas supply unit 50, and is configured to be able to introduce gas of a silane compound such as hexamethyldisiloxane (HMDSO) in addition to the above-mentioned inert gas and reactive gas.

When the opening/closing part 12 is in the closed state (FIG. 4), the vacuum vessel 10a is sealed by a packing 13 sandwiched between the vacuum vessel body 11 and the opening/closing part 12. The first electrode 21a is configured so that a film-forming target Wp can be placed on a placement surface 210 and can move between a position P1 where the film-forming target Wp faces the CVD electrode 34 and a position P2 where the film-forming target Wp faces the target electrode 220.
The film forming apparatus 2 may be provided with a removable shutter for covering the target T during CVD.

(Variation 2)
In the above embodiment, the information generating unit 120 is configured to calculate the maintenance information based on the number of stops. However, the information generating unit 120 can calculate the maintenance information based on the frequency or interval of the output stop of the DC power supply unit 31 by the stop unit 32. In this case, the information generating unit 120 calculates the frequency or average interval of the output stop, and can generate the maintenance information by determining whether or not the maintenance time is approaching depending on whether or not the calculated value satisfies the condition based on the corresponding maintenance threshold. The average value may be calculated as a daily average value, a weekly average value, or a monthly average value, or may be calculated from the number of stops that occur during one continuous operation other than the average by time. For example, the method of determining the maintenance threshold value may be a method of setting conditions in which the control unit 100 stores the frequency of output stop at the time of product shipment in the storage unit, and a value at which an unacceptable difference occurs between the stored frequency and the actually measured frequency occurs as the maintenance threshold value.

(Variation 3)
In the second modification, when the information generating unit 120 generates the maintenance information based on the frequency of output stop, the frequency may be calculated at each predetermined time during film formation, and the maintenance information may be generated based on the change in the frequency. For example, the information generating unit 120 may calculate the change in the frequency over time using a slope corresponding to a difference or a differential coefficient, and calculate a predicted value for the maintenance time using the calculated value. Alternatively, the information generating unit 120 may generate the maintenance information by determining whether or not the maintenance time is approaching depending on whether or not the calculated value satisfies a condition based on a corresponding maintenance threshold value.

(Variation 4)
A program for realizing the information processing function of the film forming apparatuses 1 and 2 may be recorded on a computer-readable recording medium, and the program recorded on the recording medium for controlling the processing of the control unit 100 and related processing may be read and executed by a computer system. The term "computer system" as used herein includes an operating system (OS) and hardware peripherals. The term "computer-readable recording medium" refers to a portable recording medium such as a flexible disk, a magneto-optical disk, an optical disk, a memory card, and a storage device such as a hard disk or a solid state drive (SSD) built into a computer system. The term "computer-readable recording medium" may also include a storage device that dynamically holds a program for a short period of time, such as a communication line when a program is transmitted via a network such as the Internet or a telephone line, or a storage device that holds a program for a certain period of time, such as a volatile memory inside a computer system that is a server or client in that case. The above-mentioned program may be for realizing part of the above-mentioned functions, or may be for realizing the above-mentioned functions in combination with a program already recorded in the computer system.

When applied to a personal computer (hereinafter referred to as PC), the above-mentioned control program can be provided through a recording medium such as a CD-ROM or a data signal from the Internet. FIG. 5 shows this state. PC950 receives the program through CD-ROM953. PC950 also has a connection function to communication line951. Computer952 is a server computer that provides the above-mentioned program, and stores the program in a recording medium such as a hard disk. Communication line951 is a communication line such as the Internet or personal computer communication, or a dedicated communication line. Computer952 reads the program using the hard disk and transmits the program to PC950 through communication line951. That is, the program is carried as a data signal by a carrier wave and transmitted through communication line951. In this way, the program can be supplied as a computer-readable computer program product in various forms such as a recording medium or a carrier wave.

(Aspects)
It will be appreciated by those skilled in the art that the exemplary embodiments described above are examples of the following aspects.

(1) A film formation apparatus according to one embodiment includes a film formation unit having a plurality of electrodes including at least a first electrode and a second electrode connected to a target, and a voltage application unit that applies a DC voltage between the first electrode and the second electrode and temporarily stops the application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target, and includes an information generation unit that generates information about the timing of maintenance of the film formation apparatus based on at least one of the number of times, frequency, and interval of the stoppage. This makes it possible to accurately predict the timing of maintenance of the film formation apparatus according to the film formation conditions, etc.

(2) In another aspect of the film forming apparatus, the information generating unit uses a different method of deriving the maintenance timing based on the film forming conditions in the film forming apparatus of the first aspect. This makes it possible to accurately predict the maintenance timing of the film forming apparatus according to the film forming conditions.

(Clause 3) In another embodiment of the film forming apparatus, the film forming conditions in the film forming apparatus of the embodiment of clause 2 are at least one of the type and conductivity of the material constituting the target, and the type of reactive gas. This makes it possible to accurately predict the timing of maintenance of the film forming apparatus according to the conditions of the target or reactive gas.

(4) In another aspect of the film forming apparatus, in the film forming apparatus of the aspect of paragraphs 2 or 3, the information generating unit generates information about the timing of replacing the target based on the film forming conditions. This makes it possible to accurately predict the timing of replacing the target in the film forming apparatus according to the film forming conditions.

(5) In another embodiment of the film forming apparatus, in any one of the embodiments from 2 to 4, the information generating unit generates the information based on whether at least one of the number of stops, the frequency, and the interval satisfies a condition based on a predetermined threshold, and the information generating unit varies the threshold based on the film forming conditions. This makes it possible to more accurately predict the timing of maintenance of the film forming apparatus using the threshold set according to the film forming conditions.

(6) In another aspect of the film forming apparatus, in any one of the aspects of the film forming apparatus from 1 to 4, the information generating unit generates information about the maintenance timing based on a change in the frequency of the stoppage. This makes it possible to more accurately predict the maintenance timing of the film forming apparatus.

(7) In another embodiment of the film forming apparatus, the film forming apparatus according to any one of the embodiments 1 to 6 is provided with a display control unit that displays the information and at least one of a notice and a warning based on the information on a screen. This makes it possible to convey information about the timing of maintenance to the user in an easy-to-understand manner.

(Item 8) In another aspect of the film formation apparatus, in the film formation apparatus of any of items 1 to 7, the film formation section further includes a CVD electrode. In such a case, film formation components such as targets are prone to deterioration, increasing the need to accurately predict maintenance times, and therefore the film formation apparatus of each of the above aspects can be suitably applied.

(Item 9) In one embodiment, the film formation method is a film formation method using a film formation apparatus having a film formation unit with a plurality of electrodes including at least a first electrode and a second electrode connected to a target, and includes applying a DC voltage between the first electrode and the second electrode, temporarily stopping the application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target, and generating information about the timing of maintenance of the film formation apparatus based on at least one of the number of times, frequency, and interval of the stopping. This makes it possible to accurately predict the timing of maintenance of the film formation apparatus depending on the film formation conditions, etc.

(Item 10) In one embodiment, the program is for causing a processing device of a film formation apparatus having a film formation unit with a plurality of electrodes including at least a first electrode and a second electrode connected to a target to perform a process, the process comprising: a voltage control process (corresponding to step S105 in the flowchart of FIG. 3) that applies a DC voltage between the first electrode and the second electrode, and temporarily stops the application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target; and an information generation process (corresponding to step S109) that generates information about the timing of maintenance of the film formation apparatus based on at least one of the number of times, frequency, and interval of the stop. This makes it possible to accurately predict the timing of maintenance of the film formation apparatus according to the film formation conditions, etc.

The present invention is not limited to the above-described embodiment. Other aspects that are conceivable within the scope of the technical concept of the present invention are also included in the scope of the present invention.

1, 2...film formation device, 10, 10a...vacuum vessel, 11...vacuum vessel body, 12...opening/closing section, 21, 21a...first electrode, 22...second electrode, 30...voltage application section, 31...DC power supply section, 32...stopping section, 34...CVD electrode, 35...matching box, 36...high frequency power supply, 40...vacuum exhaust system, 50, 50a...gas supply section, 60...display section, 100...control section, 110...voltage control section, 120...information generation section, 130...display control section, T...target, Wp...film formation target.

Claims (9)

a film forming unit including a plurality of electrodes including at least a first electrode and a second electrode electrically connectable to a target;
a voltage application unit that applies a DC voltage between the first electrode and the second electrode, and temporarily stops application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target,
The film forming apparatus includes an information generating unit that calculates a change in the frequency of stoppage over time based on a slope, and calculates a predicted value for a maintenance timing of the film forming apparatus based on the calculated value. 2. The film forming apparatus according to claim 1,
The film forming apparatus according to claim 1 , wherein the information generating unit varies a method of deriving the maintenance timing based on a film forming condition. 3. The film forming apparatus according to claim 2,
The film formation conditions are at least one of the type and conductivity of a material constituting the target, and the type of a reactive gas. 4. The film forming apparatus according to claim 2,
The information generating unit generates information regarding a timing for replacing the target based on the film formation conditions. a film forming unit including a plurality of electrodes including at least a first electrode and a second electrode electrically connectable to a target;
a voltage application unit that applies a DC voltage between the first electrode and the second electrode, and temporarily stops application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target,
A storage medium in which different maintenance thresholds are set depending on film formation conditions;
an information generating unit that refers to the maintenance threshold value corresponding to the film forming condition set based on a user operation, and calculates a predicted value of a maintenance timing of the film forming apparatus based on whether or not at least one of the number of times, frequency, and interval of the stoppages satisfies a condition based on the referred maintenance threshold value;
A film forming apparatus comprising: 6. The film forming apparatus according to claim 1,
A film forming apparatus including a display control unit that displays, on a screen, the predicted value and at least one of a notice and a warning based on the predicted value . 7. The film forming apparatus according to claim 1,
The film forming apparatus, wherein the film forming section further includes a CVD electrode. A film formation method using a film formation apparatus including a film formation unit having a plurality of electrodes including at least a first electrode and a second electrode electrically connectable to a target,
applying a DC voltage between the first electrode and the second electrode, and temporarily stopping application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target;
calculating a change over time in the frequency of the stoppages from a slope, and calculating a predicted value for a maintenance timing of the film formation apparatus based on the calculated value. A program for causing a processing device of a film formation apparatus including a film formation unit including a plurality of electrodes including at least a first electrode and a second electrode electrically connectable to a target to perform a process,
The process comprises:
a voltage control process of applying a DC voltage between the first electrode and the second electrode, and temporarily stopping the application of the DC voltage based on at least one of a current and a voltage measured in a circuit connected to the target;
and an information generating process for calculating a change over time in the frequency of the stoppages based on a slope, and calculating a predicted value of a maintenance timing for the film forming apparatus based on the calculated value.

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