JP7467274B2 - Temperature estimation method and film forming apparatus - Google Patents

Description

This disclosure relates to a temperature estimation method and a film forming apparatus.

A technology is known in which a sensor measures the thermal characteristics of a wafer, and the temperature of multiple regions of the wafer is independently adjusted based on the measured values to process the wafer (see, for example, Patent Document 1).

JP 2006-283173 A

This disclosure provides technology that can estimate the temperature of a substrate before it is placed on a mounting table.

A temperature estimation method according to one aspect of the present disclosure is a method for estimating a temperature of a substrate before it is placed on a mounting table including a heater, the method comprising the steps of: positioning the substrate above the mounting table at a distance from a mounting surface; measuring a first output of the heater for maintaining the mounting table at a target temperature with the substrate positioned at a distance from the mounting surface; placing the substrate on the mounting surface after measuring the first output; measuring a second output of the heater during a transition period from when the substrate is placed on the mounting surface until when the mounting table reaches the target temperature; and estimating the temperature of the substrate before it is placed on the mounting surface based on the first output and the second output, the estimating step including the steps of: calculating energy applied by the heater to the mounting table from when the substrate is placed on the mounting surface until when the mounting table reaches the target temperature based on the first output and the second output; and calculating the temperature of the substrate before it is placed on the mounting surface based on the energy and the heat capacity of the substrate .

According to the present disclosure, it is possible to estimate the temperature of the substrate before it is placed on the mounting table.

1 is a schematic diagram showing an example of a film forming apparatus according to an embodiment; FIG. 2 is a diagram showing an example of a heat reflector included in the film forming apparatus of FIG. 1 is a flowchart showing an example of a temperature estimation method according to an embodiment. FIG. 13 is a diagram showing an example of a change in heater output over time. FIG. 1 is a diagram showing an example of a change in energy for heating a mounting table over time. FIG. 13 is a diagram showing an example of the relationship between preheating time and temperature before placement.

Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the attached drawings. In all the attached drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and duplicate descriptions will be omitted.

[Film forming device]
An example of a film forming apparatus according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of a film forming apparatus according to an embodiment.

The film forming apparatus 1 has a processing vessel 31. The processing vessel 31 has a generally cylindrical shape that is airtight. A mounting table 32 is disposed within the processing vessel 31. The mounting table 32 is formed of ceramics such as aluminum nitride (AlN). The mounting table 32 has a mounting surface that horizontally supports a substrate W. The substrate W is, for example, a semiconductor wafer. The mounting table 32 is supported by a support member 33 at the lower center. A guide ring 34 is provided on the periphery of the mounting table 32. The guide ring 34 surrounds the periphery of the substrate W. The guide ring 34 guides the position of the substrate W.

Heaters 35a and 35b are embedded in the mounting table 32. The heater 35a is embedded in the center of the mounting table 32. The heater 35b is embedded in a ring shape outside the heater 35a, i.e., in the peripheral portion of the mounting table 32. The heaters 35a and 35b heat the mounting table 32 to a predetermined temperature by being supplied with power from a heater power source 36. The heaters 35a and 35b may be, for example, independently controllable resistance heaters. Temperature sensors 37 are connected to the center and peripheral portions of the mounting table 32, respectively. The temperature sensors 37 measure the temperatures of the center and peripheral portions of the mounting table 32 and transmit the measured values to the control unit 90. The temperature sensors 37 may be, for example, thermocouples.

A shower head 40 is provided on the ceiling 31a of the processing vessel 31 via an insulating member 39. The shower head 40 includes an upper block body 40a, a middle block body 40b, and a lower block body 40c.

A first gas inlet 41 and a second gas inlet 42 are formed on the top surface of the upper block body 40a. A number of gas flow paths 43 branching off from the first gas inlet 41 are formed inside the upper block body 40a. A number of gas flow paths 44 branching off from the second gas inlet 42 are formed inside the upper block body 40a.

The middle block body 40b is connected to the underside of the upper block body 40a. A gas flow path 45 is formed in the middle block body 40b. The gas flow path 45 communicates with the gas flow path 43 via a horizontally extending communication passage 43a. A gas flow path 46 is formed in the middle block body 40b. The gas flow path 46 communicates with the gas flow path 44.

The lower block body 40c is connected to the underside of the middle block body 40b. The lower block body 40c has a number of discharge holes 47 and a number of discharge holes 48 that penetrate vertically. The discharge holes 47 and the discharge holes 48 are arranged alternately. The discharge holes 47 communicate with the gas flow path 45. The discharge holes 48 communicate with the gas flow path 46 via a communication path 46a that extends horizontally inside the middle block body 40b.

The gas supply mechanism 20 includes a first gas supply source 21, a second gas supply source 22, a gas supply line 23, and a gas supply line 24.

The first gas supply source 21 includes, for example, a _ClF3 gas supply source, a _TiCl4 gas supply source, and a _N2 gas supply source. _{The ClF3} gas supply source supplies _ClF3 gas, which is a cleaning gas. _{The TiCl4} gas supply source supplies _TiCl4 gas, which is a Ti-containing gas. The _N2 gas supply source supplies _N2 gas.

The second gas supply source 22 includes, for example, an _NH3 gas supply source and an _N2 gas supply source. The _NH3 gas supply source supplies _NH3 gas. The _N2 gas supply source supplies _N2 gas.

The gas supply line 23 connects the first gas supply source 21 and the first gas inlet 41. The gas supply line 23 transports _ClF3 gas, _TiCl4 gas, and _N2 gas from the first gas supply source 21 to the shower head 40 via the first gas inlet 41. The gas supply line 23 is provided with a mass flow controller, a valve, and the like.

The gas supply line 24 connects the second gas supply source 22 and the second gas inlet 42. The gas supply line 24 transports the _NH3 gas and _N2 gas from the second gas supply source 22 to the shower head 40 via the second gas inlet 42. The gas supply line 24 is provided with a mass flow controller, a valve, etc.

An RF power supply 64 is connected to the shower head 40 via a matching device 63. The matching device 63 matches the impedance of the load side as seen from the RF power supply 64 to the output impedance of the RF power supply 64. The RF power supply 64 applies RF power to the shower head 40.

A circular opening 65 is formed in the center of the bottom 31b of the processing vessel 31. An exhaust chamber 66 is provided in the bottom 31b, which protrudes downward to cover the opening 65. An exhaust pipe 67 is connected to the side of the exhaust chamber 66. An exhaust device 68 is connected to the exhaust pipe 67. The exhaust device 68 reduces the pressure inside the processing vessel 31 to a predetermined vacuum level via the exhaust pipe 67.

The mounting table 32 is provided with three lift pins 69 (only two are shown) for supporting and raising and lowering the substrate W. The lift pins 69 are fixed to a support plate 70. The support plate 70 is connected to a drive mechanism 71 such as an air cylinder. The drive mechanism 71 raises and lowers the lift pins 69 via the support plate 70. In the raised position, the tips of the lift pins 69 protrude above the mounting surface of the mounting table 32. This supports the substrate W above the mounting table 32 at a position separated from the mounting surface. In the lowered position, the tips of the lift pins 69 are accommodated below the mounting surface of the mounting table 32. This allows the substrate W to be placed on the mounting surface. That is, the substrate W comes into contact with the mounting surface.

A loading/unloading port 72 is formed in the side wall of the processing vessel 31. The substrate W is loaded into the processing vessel 31 through the loading/unloading port 72. The substrate W is unloaded from the processing vessel 31 through the loading/unloading port 72. The loading/unloading port 72 is opened and closed by a gate valve G.

Above the mounting surface of the mounting table 32, a heat reflecting plate 80 (see FIG. 2) is provided, which is disposed opposite the mounting surface. In FIG. 1, the heat reflecting plate 80 is omitted. The heat reflecting plate 80 has, for example, a disk shape with an outer diameter larger than that of the substrate W. The heat reflecting plate 80 moves between a first position (solid line in FIG. 2) facing the mounting surface and a second position (two-dot chain line in FIG. 2) not facing the mounting surface. At the first position, the heat reflecting plate 80 reflects heat from the heaters 35a and 35b. As a result, when a substrate W with high transmittance is placed on the mounting surface and heated, the heat that has passed through the substrate W is reflected by the heat reflecting plate 80 and returns to the substrate W, thereby increasing the heating rate of the substrate W. Examples of substrates W with high transmittance include silicon wafers coated with oxide and silicon wafers on which no film has been formed. On the other hand, examples of substrates W with low transmittance include silicon wafers coated with a metal film. Hereinafter, a silicon wafer coated with an oxide is referred to as "Si oxide," a silicon wafer on which no film is formed is referred to as "bare Si," and a silicon wafer coated with a metal film is referred to as "Si metal." The heat reflection coefficient of the heat reflector 80 may be the same or approximately the same over the entire region, for example. The heat reflection coefficient of the heat reflector 80 may be higher at the periphery than at the center. When the heat reflection coefficient of the periphery is higher than that of the center, the temperature of the periphery of the substrate W can be increased without using a multi-zone heater or a lamp heating method.

The film forming apparatus 1 further includes a control unit 90. The control unit 90 controls each part of the film forming apparatus 1. The control unit 90 may be, for example, a computer. Furthermore, a computer program that controls the operation of each part of the film forming apparatus 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, etc.

However, in the case of the mounting table 32 in which the heaters 35a and 35b are embedded, it takes time for the temperature of the mounting table 32 to reach the target temperature, so the substrate W is often placed on the mounting table 32 in a state where the temperature has been raised to the target temperature in advance. In this case, if the temperature of the substrate W is low, the substrate may crack due to the temperature difference between the mounting table 32 and the substrate W. Therefore, it is preferable to preheat the substrate W while lifting the substrate W from the mounting surface by the lift pins 69. When preheating, it is preferable to measure the actual temperature of the substrate W and place the substrate W on the mounting surface after the measured temperature reaches a predetermined temperature, for example, a temperature at which the substrate does not crack. However, when measuring the temperature of the substrate W while lifting the substrate W from the mounting surface by the lift pins 69, a thermocouple or a radiation thermometer is placed in the processing vessel 31, which complicates the device configuration. In particular, in the case of the mounting table 32 that employs a multi-zone heater divided into multiple regions (zones), multiple thermocouples and radiation thermometers are placed, which makes the device configuration even more complicated.

There is also a method in which, without measuring the actual temperature of the substrate W, the substrate W is lifted from the support surface for a predetermined time, and then the substrate W is placed on the support surface. In this case, depending on the type of film formed on the substrate W, the preheating may be insufficient or excessive, making it difficult to set the preheating time.

Below, we will explain a method for estimating the temperature of the substrate W before it is placed on the placement surface without using a temperature sensor such as a thermocouple or a radiation thermometer.

[Temperature estimation method]
A method for estimating the temperature of a substrate W before it is placed on a support surface (hereinafter referred to as a "temperature estimation method") will be described with reference to Figures 3 to 6. The temperature estimation method is performed, for example, on the first substrate W in a lot, or the first substrate W after several lots have been processed. However, the timing at which the temperature estimation method is performed is not limited to this.

In the temperature estimation method, the heater output is PID controlled based on the measurement value of the temperature sensor 37 so that the temperature of the mounting table 32 is maintained at a target temperature. In addition, in the temperature estimation method, when the substrate W is placed on the mounting surface, a heat transfer gas is introduced between the mounting surface and the back surface of the substrate W. In the following explanation, a case where one heater 35 is embedded in the mounting table 32 is taken as an example.

First, in step S1, the control unit 90 positions the substrate W above the mounting table 32 and away from the mounting surface. For example, the control unit 90 controls the drive mechanism 71 to raise the lift pins 69 and receive the substrate W being loaded into the processing vessel 31 via the load/unload port 72. Then, by pre-heating the substrate W while it is positioned above the mounting table 32 and away from the mounting surface, it is possible to prevent substrate cracks from occurring due to the temperature difference between the mounting table 32 and the substrate W when the substrate W is placed on the mounting surface.

Next, in step S2, the control unit 90 measures the output of the heater 35 (hereinafter referred to as "first output P1") for maintaining the mounting table 32 at the target temperature with the substrate W separated from the mounting surface. For example, the state in which the substrate W is separated from the mounting surface is a state in which the lower surface of the substrate W is supported by the lift pins 69. The first output P1 is often smaller than the output of the heater 35 for maintaining the mounting table 32 at the target temperature with the substrate W not positioned thereon (hereinafter referred to as "initial output P0").

Figure 4 shows an example of the change in heater output over time, with the horizontal axis showing time [seconds] and the vertical axis showing heater output [W]. Figure 4 shows the output of the heater 35 when three oxidized silicon wafers, three bare silicon wafers, and three metal silicon wafers are supported by the lift pins 69 and then placed on the placement surface. For example, as shown in Figure 4, the initial output P0 is 1360 W, whereas the first output P1 when the oxidized silicon wafers and bare silicon wafers are placed is 1340 W. The first output P1 when the metal silicon wafers are placed is 1280 W. The reason why the first output P1 is smaller than the initial output P0 is that the heat of the heater 35 is reflected by the substrate W toward the placement table 32 instead of being transmitted to the inner wall of the processing vessel 31.

In step S2, the control unit 90 may generate correspondence information that associates the difference value P0-P1 between the initial output P0 and the first output P1 with the type of the substrate W. As described above, the difference value P0-P1 indicates a different value depending on the type of substrate W. Therefore, when an unknown type of substrate W is placed above the mounting table 32 away from the mounting surface, the difference value P0-P1 is measured, and the type of substrate W can be estimated based on the difference value P0-P1 and the correspondence information. For example, when an unknown type of substrate W is placed above the mounting table 32 away from the mounting surface and the difference value P0-P1 is 20 W, the control unit 90 estimates that the substrate W is oxidized Si or bare Si. Also, for example, when an unknown type of substrate W is placed above the mounting table 32 away from the mounting surface and the difference value P0-P1 is 80 W, the control unit 90 estimates that the substrate W is metal Si.

Next, in step S3, the control unit 90 places the substrate W on the placement surface. For example, the control unit 90 controls the drive mechanism 71 to lower the lift pins 69 so that their tips are housed below the placement surface, thereby placing the substrate W on the placement surface.

Next, in step S4, the control unit 90 measures the output of the heater 35 (hereinafter referred to as the "second output P2") over time during a transition period x from when the substrate W is placed on the placement surface until the placement table 32 reaches the target temperature. For example, as shown in FIG. 4, the second output P2 fluctuates greatly immediately after the substrate W is placed on the placement surface, and the fluctuation gradually decreases. This fluctuation occurs because the temperature of the placement table 32 drops suddenly due to contact of the substrate W with the placement surface or heat transfer gas introduced between the placement surface and the substrate W, and the output of the heater 35 tries to follow the sudden fluctuation in the temperature of the placement table 32. The transition period x may be, for example, the period until the amplitude of the fluctuation becomes less than 10% of the maximum amplitude.

Next, in step S5, the control unit 90 estimates the temperature of the substrate W before it is placed on the placement surface based on the first output P1 and the second output P2.

In step S5, first, the control unit 90 calculates the energy applied by the heater 35 to the mounting table 32 from the time the substrate W is placed on the mounting surface until the mounting table 32 reaches the target temperature, based on the first output P1 and the second output P2. As shown in the following formula (1), the energy is calculated as the time integral value of the difference between the second output P2 and the first output P1 during the transition period x.

For example, if the target temperature is 400°C and the substrate W is Si oxide, the energy is E1 [J] as shown in Figure 5. For example, if the target temperature is 400°C and the substrate W is bare Si, the energy is E2 [J] as shown in Figure 5.

In step S5, the control unit 90 then calculates the temperature of the substrate W before it is placed on the mounting surface, based on the calculated energy and the heat capacity C(T) of the substrate W. The target temperature _Tset is calculated by the following formula (2) using the temperature of the substrate W before it is placed on the mounting surface (hereinafter referred to as the "pre-placement temperature _T0 "), the calculated time integral value, and the heat capacity C(T) of the substrate W.

Transforming equation (2) gives us equation (3) below.

In this way, the pre-placement temperature T ₀ is calculated by the formula (3).

Next, in step S6, the control unit 90 determines the apparatus parameters based on the estimated pre-placement temperature T _0. The apparatus parameters include, for example, the time during which the substrate W is heated while being held away from the placement surface (hereinafter referred to as the "pre-heating time"). For example, the control unit 90 lengthens the pre-heating time when the estimated pre-placement temperature T ₀ is lower than a predetermined temperature. Also, for example, the control unit 90 shortens the pre-heating time when the estimated pre-placement temperature T ₀ is higher than a predetermined temperature. Also, the apparatus parameters may include the output ratio between the multiple heaters 35. For example, the control unit 90 determines that the radiation from the substrate W is small when the estimated pre-placement temperature T ₀ is lower than a predetermined temperature, and increases the output of the heater embedded in the peripheral portion of the placement table 32. Also, for example, the control unit 90 determines that the radiation from the substrate W is large when the estimated pre-placement temperature T ₀ is higher than a predetermined temperature, and does not change the output of the heater embedded in the peripheral portion of the placement table 32.

As described above, the control unit 90 can estimate the pre-placement temperature T ₀ by executing steps S1 to S6 without using a temperature sensor.

Furthermore, the control unit 90 may execute steps S1 to S6 under a plurality of conditions with different preheating times, thereby making it possible to estimate the relationship between the preheating time and the pre-placement temperature _T0 without using a temperature sensor.

Furthermore, the control unit 90 may execute steps S1 to S6 under a plurality of conditions for different types of substrates W. This makes it possible to estimate the relationship between the pre-heating time and the pre-positioning temperature _T0 for each type of substrate W without using a temperature sensor.

Figure 6 is a diagram showing an example of the relationship between preheating time and pre-placement temperature, where the horizontal axis indicates preheating time [seconds] and the vertical axis indicates pre-placement temperature [°C]. The example in Figure 6 shows the relationship between preheating time and pre-placement temperature when the substrate W is bare Si, oxidized Si, or metallic Si.

As shown in FIG. 6, the temperature rise rates are different among metal Si, silicon oxide, and bare Si even with the same preheating time. Specifically, the temperature rise rates are higher for metal Si, silicon oxide, and bare Si in the order of highest to lowest for the same preheating time. Therefore, the control unit 90 performs the above-mentioned steps S1 to S6 on the substrate W of unknown type to estimate the pre-positioning temperature T _0. The control unit 90 can estimate the type of the unknown substrate W by comparing the preheating time and the estimated pre-positioning temperature T ₀ when steps S1 to S6 are performed with the relationship between the preheating time and the pre-positioning temperature T ₀ for each type of substrate W shown in FIG. 6. For example, consider a case where the preheating time when steps S1 to S6 are performed is 300 seconds and the estimated pre-positioning temperature T ₀ is 300° C. In FIG. 6, the substrate W whose temperature is closest to 300° C. when the preheating time is 300 seconds is silicon oxide. Therefore, the control unit 90 estimates that the substrate W of unknown type is silicon oxide.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

REFERENCE SIGNS LIST 1 Film forming apparatus 31 Processing vessel 32 Mounting stage 35, 35a, 35b Heater 90 Control unit P1 First output P2 Second output T _Set target temperature x Transition period W Substrate

Claims (10)

1. A method for estimating a temperature of a substrate before it is placed on a placement table including a heater, comprising:
disposing the substrate above the mounting table at a distance from a mounting surface;
measuring a first output of the heater for maintaining the mounting table at a target temperature in a state in which the substrate is disposed away from the mounting surface;
After measuring the first output, placing the substrate on the placement surface;
measuring a second output of the heater during a transition period from when the substrate is placed on the placement surface until when the placement table reaches the target temperature;
estimating a temperature of the substrate before being placed on the placement surface based on the first output and the second output;
having
The estimating step includes:
calculating, based on the first output and the second output, energy applied by the heater to the mounting table from when the substrate is placed on a mounting surface until the mounting table reaches the target temperature;
calculating a temperature of the substrate before it is placed on the placement surface based on the energy and a heat capacity of the substrate;
including,
Temperature estimation method. The energy is calculated by a time integral value of a difference value between the second output and the first output during the transition period.
The temperature estimation method according to claim 1 . 1. A method for estimating a temperature of a substrate before it is placed on a placement table including a heater, comprising:
disposing the substrate above the mounting table at a distance from a mounting surface;
measuring a first output of the heater for maintaining the mounting table at a target temperature in a state in which the substrate is disposed away from the mounting surface;
After measuring the first output, placing the substrate on the placement surface;
measuring a second output of the heater during a transition period from when the substrate is placed on the placement surface until when the placement table reaches the target temperature;
estimating a temperature of the substrate before being placed on the placement surface based on the first output and the second output;
having
The state in which the substrate is separated from the placement surface is a state in which the lower surface of the substrate is supported by lift pins.
Temperature estimation method. 1. A method for estimating a temperature of a substrate before it is placed on a placement table including a heater, comprising:
disposing the substrate above the mounting table at a distance from a mounting surface;
measuring a first output of the heater for maintaining the mounting table at a target temperature in a state in which the substrate is disposed away from the mounting surface;
After measuring the first output, placing the substrate on the placement surface;
measuring a second output of the heater during a transition period from when the substrate is placed on the placement surface until when the placement table reaches the target temperature;
estimating a temperature of the substrate before being placed on the placement surface based on the first output and the second output;
having
determining an equipment parameter based on the temperature of the substrate estimated in the estimating step;
The apparatus parameters include a time for heating the substrate while separated from the mounting surface.
Temperature estimation method. the mounting table includes a plurality of heaters arranged in different regions within a surface thereof;
the device parameters include a power ratio between the plurality of heaters;
The temperature estimation method according to claim 4 . A processing vessel;
a mounting table for mounting a substrate in the processing chamber;
a heater for heating the mounting table;
A control unit;
having
The control unit is
disposing the substrate above the mounting table at a distance from a mounting surface;
measuring a first output of the heater for maintaining the mounting table at a target temperature in a state in which the substrate is disposed away from the mounting surface;
After measuring the first output, placing the substrate on the placement surface;
measuring a second output of the heater during a transition period from when the substrate is placed on the placement surface until when the placement table reaches the target temperature;
estimating a temperature of the substrate before being placed on the placement surface based on the first output and the second output;
is configured to run
The estimating step includes:
calculating, based on the first output and the second output, energy applied by the heater to the mounting table from when the substrate is placed on a mounting surface until the mounting table reaches the target temperature;
calculating a temperature of the substrate before it is placed on the placement surface based on the energy and a heat capacity of the substrate;
including,
Film forming equipment. A processing vessel;
a mounting table for mounting a substrate in the processing chamber;
a heater for heating the mounting table;
A control unit;
having
The control unit is
disposing the substrate above the mounting table at a distance from a mounting surface;
measuring a first output of the heater for maintaining the mounting table at a target temperature in a state in which the substrate is disposed away from the mounting surface;
After measuring the first output, placing the substrate on the placement surface;
measuring a second output of the heater during a transition period from when the substrate is placed on the placement surface until when the placement table reaches the target temperature;
estimating a temperature of the substrate before being placed on the placement surface based on the first output and the second output;
is configured to run
The present invention further includes a heat reflector disposed above the mounting surface and facing the mounting surface,
The heat reflection coefficient of the heat reflector is higher at the periphery than at the center.
Film forming equipment. A processing vessel;
a mounting table for mounting a substrate in the processing chamber;
a heater for heating the mounting table;
A control unit;
having
The control unit is
disposing the substrate above the mounting table at a distance from a mounting surface;
measuring a first output of the heater for maintaining the mounting table at a target temperature in a state in which the substrate is disposed away from the mounting surface;
After measuring the first output, placing the substrate on the placement surface;
measuring a second output of the heater during a transition period from when the substrate is placed on the placement surface until when the placement table reaches the target temperature;
estimating a temperature of the substrate before being placed on the placement surface based on the first output and the second output;
is configured to run
The device further includes a heat reflector disposed above the mounting surface and facing the mounting surface,
The heat reflector moves between a first position facing the mounting surface and a second position not facing the mounting surface.
Film forming equipment. The control unit is
moving the heat reflector to the first position when measuring the first output and the second output;
moving the heat reflector to the second position when processing the substrate;
The film forming apparatus according to claim 8 . A processing vessel;
a mounting table for mounting a substrate in the processing chamber;
a heater for heating the mounting table;
A control unit;
having
The control unit is
disposing the substrate above the mounting table at a distance from a mounting surface;
measuring a first output of the heater for maintaining the mounting table at a target temperature in a state in which the substrate is disposed away from the mounting surface;
After measuring the first output, placing the substrate on the placement surface;
measuring a second output of the heater during a transition period from when the substrate is placed on the placement surface until when the placement table reaches the target temperature;
estimating a temperature of the substrate before being placed on the placement surface based on the first output and the second output;
is configured to run
the control unit is configured to execute the placing step, the step of measuring the first output, the placing step, the step of measuring the second output, and the step of estimating for each lot.
Film forming equipment.

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