JP7454439B2 - semiconductor light emitting device - Google Patents

semiconductor light emitting device Download PDF

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JP7454439B2
JP7454439B2 JP2020076894A JP2020076894A JP7454439B2 JP 7454439 B2 JP7454439 B2 JP 7454439B2 JP 2020076894 A JP2020076894 A JP 2020076894A JP 2020076894 A JP2020076894 A JP 2020076894A JP 7454439 B2 JP7454439 B2 JP 7454439B2
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light emitting
semiconductor light
emitting device
pressing ring
substrate
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JP2021174852A (en
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真一 宮村
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Description

本発明は、半導体発光装置、特に紫外光を放射する半導体発光素子が内部に封入された半導体発光装置に関する。 The present invention relates to a semiconductor light emitting device, and particularly to a semiconductor light emitting device in which a semiconductor light emitting element that emits ultraviolet light is enclosed.

従来、半導体素子を半導体パッケージの内部に封入する半導体装置が知られている。半導体発光モジュールの場合では、半導体発光素子が載置された支持体に、発光素子からの光を透過するガラスなどの透明窓部材が接合されて気密封止される。 2. Description of the Related Art Conventionally, semiconductor devices are known in which a semiconductor element is enclosed inside a semiconductor package. In the case of a semiconductor light emitting module, a transparent window member such as glass that transmits light from the light emitting element is bonded to a support body on which the semiconductor light emitting element is placed and hermetically sealed.

例えば、特許文献１、２には、半導体発光素子を収容する凹部が設けられた基板と、窓部材とが接合された半導体発光モジュールが開示されている。 For example, Patent Documents 1 and 2 disclose semiconductor light emitting modules in which a window member is joined to a substrate provided with a recess for accommodating a semiconductor light emitting element.

また、特許文献３、４には、紫外線発光素子が搭載された実装基板と、スペーサと、ガラスにより形成されたカバーとが接合された紫外光発光装置が開示されている。 Moreover, Patent Documents 3 and 4 disclose an ultraviolet light emitting device in which a mounting board on which an ultraviolet light emitting element is mounted, a spacer, and a cover formed of glass are joined together.

特開２０１５－１８８７３号公報Japanese Patent Application Publication No. 2015-18873 特開２０１８－９３１３７号公報JP2018-93137A 特開２０１６－１２７２５５号公報JP2016-127255A 特開２０１６－１２７２４９号公報Japanese Patent Application Publication No. 2016-127249

しかしながら、基板と窓部材との間の封止性、接合信頼性について一層の向上が求められている。紫外光を放射する半導体発光素子、特にＡｌＧａＮ系の半導体発光素子は、気密が不十分であると劣化し易く、当該半導体発光素子が搭載された半導体装置には高い気密性が求められる。 However, there is a need for further improvement in sealing performance and bonding reliability between the substrate and the window member. Semiconductor light-emitting devices that emit ultraviolet light, particularly AlGaN-based semiconductor light-emitting devices, are susceptible to deterioration if airtightness is insufficient, and a semiconductor device equipped with such semiconductor light-emitting devices is required to have high airtightness.

また、ＡｌＧａＮ系結晶は水分によって劣化する。特に、発光波長が短波長になるほどＡｌ組成が増加して劣化し易い。そこで、発光素子を収めるパッケージ内部に水分が侵入しない気密構造として、基板とガラス蓋を金属接合材で気密する構造が採用されていたが、多湿環境下又は水回りで使用される場合に気密が十分でないという問題があった。 Furthermore, AlGaN-based crystals deteriorate due to moisture. In particular, as the emission wavelength becomes shorter, the Al composition increases and deterioration tends to occur more easily. Therefore, to create an airtight structure that prevents moisture from entering the inside of the package containing the light-emitting element, a structure was adopted in which the substrate and the glass lid were made airtight using a metal bonding material. The problem was that it wasn't enough.

本発明は上記した点に鑑みてなされたものであり、高接合性及び高気密性を有するとともに、高い信頼度及び高い耐環境性を有する半導体装置を提供することを目的とする。 The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor device having high bonding properties and high airtightness, as well as high reliability and high environmental resistance.

本発明の１実施形態による半導体発光装置は、
半導体発光素子と、
前記半導体発光素子が搭載されるとともに、基板金属層で被覆された基板接合面を有する基板と、
前記半導体発光素子の放射光を透過する窓部と、内縁が円形状のフランジ接合面を有するフランジとを備え、前記半導体発光素子を収容する空間を有して前記基板に封止接合された透光性キャップを有し、
前記フランジ接合面は、表面が金属層であり、平坦部と前記平坦部から突出し当該円形状の前記内縁と同心の円環状凸部である押圧環とを有し、
前記基板金属層及び前記フランジ金属層は、前記基板金属層と前記押圧環の頂部とが一定の間隔で接合材によって接合されている。 A semiconductor light emitting device according to an embodiment of the present invention includes:
A semiconductor light emitting device,
a substrate on which the semiconductor light emitting element is mounted and has a substrate bonding surface covered with a substrate metal layer;
A transparent transparent material having a window portion that transmits light emitted from the semiconductor light emitting device, and a flange having a circular inner edge and a flange joint surface, having a space for accommodating the semiconductor light emitting device, and sealingly bonded to the substrate. has a photosensitive cap;
The flange joint surface has a metal layer on the surface, and has a flat part and a pressing ring that protrudes from the flat part and is an annular convex part concentric with the circular inner edge,
In the substrate metal layer and the flange metal layer, the substrate metal layer and the top of the pressing ring are bonded to each other at regular intervals using a bonding material.

第１の実施形態による半導体発光装置１０の上面を模式的に示す平面図である。FIG. 2 is a plan view schematically showing the top surface of the semiconductor light emitting device 10 according to the first embodiment. 半導体発光装置１０の側面を模式的に示す図である。1 is a diagram schematically showing a side surface of a semiconductor light emitting device 10. FIG. 半導体発光装置１０の裏面を模式的に示す平面図である。FIG. 2 is a plan view schematically showing the back surface of the semiconductor light emitting device 10. FIG. 半導体発光装置１０の内部構造を模式的に示す図である。1 is a diagram schematically showing the internal structure of a semiconductor light emitting device 10. FIG. 第１の実施形態の透光キャップ１３の１／４部分を模式的に示す斜視図である。FIG. 2 is a perspective view schematically showing a quarter portion of the light-transmitting cap 13 of the first embodiment. 図１ＡのＡ－Ａ線に沿った半導体発光装置１０の断面を模式的に示す断面図である。1A is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 10 taken along line AA in FIG. 1A. 基板１１と透光キャップ１３の接合前の状態を模式的に示す断面図である。FIG. 3 is a cross-sectional view schematically showing a state before the substrate 11 and the light-transmitting cap 13 are bonded. 基板１１と透光キャップ１３の接合後の状態を模式的に示す断面図である。FIG. 3 is a cross-sectional view schematically showing a state after the substrate 11 and the light-transmitting cap 13 are bonded. 基板１１及びフランジ部１３Ｂの接合部の断面を拡大して示す部分拡大断面図である。FIG. 3 is a partially enlarged sectional view showing a cross section of a joint between the substrate 11 and the flange portion 13B. 基板１１及びフランジ部１３Ｂの接合部の断面を拡大して示す部分拡大断面図である。FIG. 3 is a partially enlarged sectional view showing a cross section of a joint between the substrate 11 and the flange portion 13B. 第２の実施形態による半導体発光装置３０の上面を模式的に示す平面図である。FIG. 3 is a plan view schematically showing the top surface of a semiconductor light emitting device 30 according to a second embodiment. 半導体発光装置３０の側面を模式的に示す図である。3 is a diagram schematically showing a side surface of a semiconductor light emitting device 30. FIG. 半導体発光装置３０の裏面を模式的に示す図である。3 is a diagram schematically showing the back surface of a semiconductor light emitting device 30. FIG. 半導体発光装置３０の内部構造を模式的に示す図である。3 is a diagram schematically showing the internal structure of a semiconductor light emitting device 30. FIG. 第２の実施形態の透光キャップ１３の１／４部分を模式的に示す斜視図である。FIG. 7 is a perspective view schematically showing a 1/4 portion of a light-transmitting cap 13 according to a second embodiment. 図５ＡのＢ－Ｂ線に沿った半導体発光装置３０の断面を模式的に示す断面図である。5A is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 30 along line BB in FIG. 5A. FIG. 基板１１及びフランジ部１３Ｂの接合部を拡大して示す部分拡大断面図である。FIG. 3 is a partially enlarged cross-sectional view showing a joint portion between the substrate 11 and the flange portion 13B. 接合部の部分拡大断面図であり、押圧環２１Ａの頂部が基板金属層１２に突き当たっている場合を示している。3 is a partially enlarged sectional view of the joint, showing a case where the top of the pressing ring 21A is in contact with the substrate metal layer 12. FIG. 第２の実施形態の改変例を模式的に示す平面図である。FIG. 7 is a plan view schematically showing a modified example of the second embodiment. 第２の実施形態の改変例のフランジ部１３Ｂの角部を拡大して示す上面図である。It is a top view which expands and shows the corner of the flange part 13B of the modified example of 2nd Embodiment. 第２の実施形態の改変例のフランジ部１３Ｂの角部を拡大して示す上面図であるIt is a top view which expands and shows the corner of the flange part 13B of the modified example of 2nd Embodiment. 第２の実施形態の他の改変例を示す上面図である。It is a top view which shows the other modified example of 2nd Embodiment. フランジ部１３Ｂの底面が平坦面である場合を示す部分拡大断面図である。FIG. 7 is a partially enlarged sectional view showing a case where the bottom surface of the flange portion 13B is a flat surface. 押圧環２１Ａの外側に、押圧環２１Ａと同心の円環状凸部である補助押圧環２１Ｃが設けられた場合を示す平面図である。It is a top view which shows the case where 21 C of auxiliary|assistant press rings which are annular convex parts concentric with 21 A of press rings are provided on the outer side of 21 A of press rings.

以下においては、本発明の好適な実施例について説明するが、これらを適宜改変し、組合せてもよい。また、以下の説明及び添付図面において、実質的に同一又は等価な部分には同一の参照符を付して説明する。
［第１の実施形態］
図１Ａは、本発明の第１の実施形態による半導体発光装置１０の上面を模式的に示す平面図である。図１Ｂは、半導体発光装置１０の側面を模式的に示す図である。図１Ｃは、半導体発光装置１０の裏面を模式的に示す平面図である。図１Ｄは、半導体発光装置１０の内部構造を模式的に示す図である。また、図２は、図１ＡのＡ－Ａ線に沿った半導体発光装置１０の断面を模式的に示す断面図である。 Preferred embodiments of the present invention will be described below, but these may be modified and combined as appropriate. Further, in the following description and the accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals.
[First embodiment]
FIG. 1A is a plan view schematically showing the top surface of a semiconductor light emitting device 10 according to a first embodiment of the present invention. FIG. 1B is a diagram schematically showing a side surface of the semiconductor light emitting device 10. FIG. 1C is a plan view schematically showing the back surface of the semiconductor light emitting device 10. FIG. 1D is a diagram schematically showing the internal structure of the semiconductor light emitting device 10. Further, FIG. 2 is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 10 along line AA in FIG. 1A.

図１Ａ及び図１Ｂに示すように、半導体発光装置１０は、矩形板形状の基板１１と、半円球状のガラスからなる透光性窓である透光キャップ１３と、が接合されて構成されている。より詳細には、基板１１の上面上には、円環状の金属層１２（以下、基板金属層１２ともいう。）が形成され、透光キャップ１３と接合されている。 As shown in FIGS. 1A and 1B, the semiconductor light emitting device 10 is constructed by bonding a rectangular plate-shaped substrate 11 and a transparent cap 13, which is a transparent window made of semicircular glass. There is. More specifically, an annular metal layer 12 (hereinafter also referred to as substrate metal layer 12) is formed on the upper surface of the substrate 11, and is bonded to a light-transmitting cap 13.

なお、基板１１の側面がｘ方向及びｙ方向に平行であり、基板１１の上面がｘｙ平面に平行であるとして示している。 Note that the side surfaces of the substrate 11 are shown as being parallel to the x direction and the y direction, and the top surface of the substrate 11 is shown as being parallel to the xy plane.

図１Ｅ及び図２に示すように、透光キャップ１３は、半円球状のドーム部１３Ａと、ドーム部１３Ａの底部に設けられたフランジ部１３Ｂとからなる。なお、図１Ｅは、透光キャップ１３の１／４部分を模式的に示す斜視図である。 As shown in FIGS. 1E and 2, the light-transmitting cap 13 includes a semicircular dome portion 13A and a flange portion 13B provided at the bottom of the dome portion 13A. Note that FIG. 1E is a perspective view schematically showing a quarter portion of the light-transmitting cap 13.

フランジ部１３Ｂは円環板形状を有している。フランジ部１３Ｂの底面にはフランジ金属層２１が固着されており、フランジ接合面が形成されている。基板金属層１２上に接合層２２によってフランジ金属層２１が接合されることによって、基板１１と透光キャップ１３との気密が保たれている。 The flange portion 13B has an annular plate shape. A flange metal layer 21 is fixed to the bottom surface of the flange portion 13B, forming a flange joint surface. By bonding the flange metal layer 21 onto the substrate metal layer 12 by the bonding layer 22, airtightness between the substrate 11 and the transparent cap 13 is maintained.

基板１１は、ガス等を透過しないセラミック基板である。例えば、高い熱伝導率を有し、気密性に優れた窒化アルミニウム（ＡｌＮ）が用いられる。なお、基板１１の基材としては、アルミナ（Ａｌ２Ｏ３）等の気密性に優れた他のセラミックを用いることができる。 The substrate 11 is a ceramic substrate that does not transmit gas or the like. For example, aluminum nitride (AlN), which has high thermal conductivity and excellent airtightness, is used. Note that as the base material of the substrate 11, other ceramics having excellent airtightness such as alumina (Al 2 O 3 ) can be used.

透光キャップ１３は、半導体発光装置１０内に配された発光素子１５からの放射光を透過するガラスからなる。例えば、石英ガラス又はホウ珪酸ガラスを好適に用いることができる。 The light-transmitting cap 13 is made of glass that transmits light emitted from the light-emitting element 15 disposed within the semiconductor light-emitting device 10 . For example, quartz glass or borosilicate glass can be suitably used.

半導体発光装置１０内の封入ガスとしては、ドライな窒素ガスや空気などを用いることができ、あるいは内部を真空としてもよい。 As the gas sealed inside the semiconductor light emitting device 10, dry nitrogen gas, air, or the like may be used, or the inside may be kept in a vacuum.

図１Ｄに示すように、基板１１上には、半導体発光装置１０内の配線電極である第１配線電極（例えば、アノード電極）１４Ａ及び第２配線電極（例えば、カソード電極）１４Ｂが備えられている（以下、特に区別しない場合には、配線電極１４と称する。）。発光ダイオード（ＬＥＤ）又は半導体レーザなどの半導体発光素子１５が第１配線電極１４Ａ上に金属接合層１５Ａによって接合され、発光素子１５のボンディングパッド１５Ｂがボンディングワイヤ１８Ｃを介して第２配線電極１４Ｂに電気的に接続されている。 As shown in FIG. 1D, a first wiring electrode (for example, an anode electrode) 14A and a second wiring electrode (for example, a cathode electrode) 14B, which are wiring electrodes in the semiconductor light emitting device 10, are provided on the substrate 11. (hereinafter referred to as wiring electrode 14 unless otherwise specified). A semiconductor light emitting element 15 such as a light emitting diode (LED) or a semiconductor laser is bonded onto the first wiring electrode 14A by a metal bonding layer 15A, and a bonding pad 15B of the light emitting element 15 is connected to the second wiring electrode 14B via a bonding wire 18C. electrically connected.

発光素子１５は、ｎ型半導体層、発光層及びｐ型半導体層を含む半導体構造層が形成されたアルミ窒化ガリウム（ＡｌＧａＮ）系の半導体発光素子（ＬＥＤ）である。また、発光素子１５は、半導体構造層が、反射層を介して導電性の支持基板（シリコン：Ｓｉ）上に形成（接合）されている。 The light emitting device 15 is an aluminum gallium nitride (AlGaN)-based semiconductor light emitting device (LED) in which a semiconductor structure layer including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer is formed. Further, in the light emitting element 15, a semiconductor structure layer is formed (bonded) on a conductive support substrate (silicon: Si) via a reflective layer.

発光素子１５は、支持基板の半導体構造層が接合された面の反対面（発光素子１５の裏面とも称する）にアノード電極を備え（図示せず）、基板１１上の第１配線電極１４Ａに電気的に接続されている。また、発光素子１５は、半導体構造層の支持基板が接合された面の反対面（発光素子１５の表面とも称する）にカソード電極（カソード電極パッド１５Ｂ）を備え、ボンディングワイヤを介して第２配線電極１４Ｂに電気的に接続されている。 The light emitting element 15 includes an anode electrode (not shown) on the opposite surface of the support substrate to which the semiconductor structure layer is bonded (also referred to as the back surface of the light emitting element 15), and the first wiring electrode 14A on the substrate 11 is provided with an anode electrode (not shown). connected. Further, the light emitting element 15 includes a cathode electrode (cathode electrode pad 15B) on the opposite surface of the semiconductor structure layer to the surface to which the support substrate is bonded (also referred to as the surface of the light emitting element 15), and a second wiring line is connected via a bonding wire. It is electrically connected to electrode 14B.

発光素子１５は、波長２６５～４１５ｎｍの紫外光を発光する窒化アルミ系の発光素子であることが好適である。具体的には、発光中心波長が、２６５ｎｍ、２７５ｎｍ、３５５ｎｍ、３６５ｎｍ、３８５ｎｍ、４０５ｎｍ又は４１５ｎｍの発光素子を用いた。 The light emitting element 15 is preferably an aluminum nitride light emitting element that emits ultraviolet light with a wavelength of 265 to 415 nm. Specifically, a light emitting element having a center emission wavelength of 265 nm, 275 nm, 355 nm, 365 nm, 385 nm, 405 nm or 415 nm was used.

窒化アルミ系の紫外線を放射する発光素子（ＵＶ-ＬＥＤ素子）を構成する半導体結晶のＡｌ組成は高く、酸素（Ｏ2）や水分（Ｈ2Ｏ）によって酸化劣化され易い。 Semiconductor crystals constituting aluminum nitride-based light emitting devices (UV-LED devices) that emit ultraviolet rays have a high Al composition and are easily oxidized and deteriorated by oxygen (O 2 ) and moisture (H 2 O).

また、基板１１上には、第１配線電極１４Ａ及び第２配線電極１４Ｂに接続されたツェナーダイオード（ＺＤ）である保護素子１６が設けられ、発光素子１５の静電破壊を防止する。 Further, a protection element 16 which is a Zener diode (ZD) connected to the first wiring electrode 14A and the second wiring electrode 14B is provided on the substrate 11 to prevent electrostatic damage to the light emitting element 15.

図１Ｃに示すように、基板１１の裏面には、第１配線電極１４Ａ及び第２配線電極１４Ｂにそれぞれ接続された第１実装電極１７Ａ及び第２実装電極１７Ｂ（以下、特に区別しない場合には、実装電極１７と称する。）が設けられている。具体的には、第１配線電極１４Ａ及び第２配線電極１４Ｂの各々は、例えば銅（Ｃｕ）からなる金属ビア１８Ａ、１８Ｂを介してそれぞれ第１実装電極１７Ａ及び第２実装電極１７Ｂに接続されている。 As shown in FIG. 1C, the back surface of the substrate 11 has a first mounting electrode 17A and a second mounting electrode 17B (hereinafter, when not particularly distinguished, , referred to as mounting electrodes 17) are provided. Specifically, each of the first wiring electrode 14A and the second wiring electrode 14B is connected to the first mounting electrode 17A and the second mounting electrode 17B, respectively, via metal vias 18A and 18B made of, for example, copper (Cu). ing.

図２を参照すると、半導体発光装置１０は配線回路基板（図示しない）上に実装され、第１実装電極１７Ａ及び第２実装電極１７Ｂへの電圧印加によって、発光素子１５は発光し、発光素子１５の表面（光取り出し面）からの放射光ＬＥは透光キャップ１３を経て外部に放射される。 Referring to FIG. 2, the semiconductor light emitting device 10 is mounted on a printed circuit board (not shown), and the light emitting element 15 emits light by applying voltage to the first mounting electrode 17A and the second mounting electrode 17B. The emitted light LE from the surface (light extraction surface) is emitted to the outside through the light-transmitting cap 13.

次に、基板１１と透光キャップ１３のフランジ部１３Ｂとの接合について説明する。
（透光キャップ１３及びフランジ部１３Ｂ）
また、図１Ａ及び図１Ｂに示すように、透光キャップ１３は、半円球状の窓部であるドーム部１３Ａと、ドーム部１３Ａの底部に設けられたフランジ部１３Ｂとからなる。フランジ部１３Ｂは円柱状の外形を有している。より詳細には、フランジ部１３Ｂの底面はドーム部１３Ａの中心と同心の円環形状（中心：Ｃ）を有している。すなわち、フランジ部１３Ｂの外縁（外周）は、フランジ部１３Ｂの内縁（内周）と同心である。 Next, the joining between the substrate 11 and the flange portion 13B of the light-transmitting cap 13 will be described.
(Transparent cap 13 and flange portion 13B)
Further, as shown in FIGS. 1A and 1B, the light-transmitting cap 13 includes a dome portion 13A, which is a semicircular window portion, and a flange portion 13B provided at the bottom of the dome portion 13A. The flange portion 13B has a cylindrical outer shape. More specifically, the bottom surface of the flange portion 13B has an annular shape (center: C) concentric with the center of the dome portion 13A. That is, the outer edge (outer circumference) of the flange portion 13B is concentric with the inner edge (inner circumference) of the flange portion 13B.

図３Ａは、基板１１と透光キャップ１３の接合前の状態を模式的に示す断面図である。フランジ部１３Ｂの円環状底面の半径方向（幅方向）の中央部には、フランジ部１３Ｂの底面（フランジ接合面）と同心円の円周に沿って凸部１３Ｃが形成されている。すなわち、フランジ部１３Ｂの底面は、平坦面と当該平坦面から突出した凸部１３Ｃとが形成されている（以後、円環状凸部と称することもある）。また、円環状凸部１３Ｃの当該同心円の円周に垂直な断面形状は半円形であるが、これに限定されない。例えば、矩形状又は台形状であってもよい。
（フランジ金属層２１）
また、フランジ部１３Ｂの底面には金属層２１が固着されている。凸部１３Ｃ及びフランジ金属層２１によって、フランジ部１３Ｂの底面に沿って、表面が金属で被覆された円環状の凸部である押圧環２１Ａが形成されている。
（基板金属層１２）
図１Ａ及び図１Ｄに示すように、基板１１上には、円環形状を有する金属環体である基板金属層１２が固着され、基板接合面が形成されている。より詳細には、基板金属層１２が固着されている基板１１の接合領域は平坦であり、基板金属層１２は、フランジ部１３Ｂの底面に対応する形状（すなわち、円環形状）及び大きさを有している。 FIG. 3A is a cross-sectional view schematically showing the state of the substrate 11 and the transparent cap 13 before they are bonded. A convex portion 13C is formed at the center in the radial direction (width direction) of the annular bottom surface of the flange portion 13B along a circumference concentric with the bottom surface (flange joint surface) of the flange portion 13B. That is, the bottom surface of the flange portion 13B is formed with a flat surface and a convex portion 13C protruding from the flat surface (hereinafter also referred to as an annular convex portion). Further, the cross-sectional shape of the annular convex portion 13C perpendicular to the circumference of the concentric circle is semicircular, but is not limited to this. For example, it may be rectangular or trapezoidal.
(Flange metal layer 21)
Furthermore, a metal layer 21 is fixed to the bottom surface of the flange portion 13B. The convex portion 13C and the flange metal layer 21 form a pressing ring 21A, which is an annular convex portion whose surface is coated with metal, along the bottom surface of the flange portion 13B.
(Substrate metal layer 12)
As shown in FIGS. 1A and 1D, a substrate metal layer 12, which is a metal ring having an annular shape, is fixed on the substrate 11 to form a substrate bonding surface. More specifically, the bonding area of the substrate 11 to which the substrate metal layer 12 is fixed is flat, and the substrate metal layer 12 has a shape (that is, an annular shape) and a size corresponding to the bottom surface of the flange portion 13B. have.

また、基板金属層１２は、フランジ部１３Ｂの底面のフランジ金属層２１の全体を包含する大きさを有している。基板金属層１２は、第１配線電極１４Ａ、第２配線電極１４Ｂ、発光素子１５及び保護素子１６とは電気的に絶縁され、これらを取り囲むように形成されている。 Further, the substrate metal layer 12 has a size that includes the entire flange metal layer 21 on the bottom surface of the flange portion 13B. The substrate metal layer 12 is electrically insulated from the first wiring electrode 14A, the second wiring electrode 14B, the light emitting element 15, and the protection element 16, and is formed so as to surround them.

円環状の基板金属層１２上に、円環状の接合材が載置され、加熱しつつ、透光キャップ１３に力Ｆを印加し押圧することによって、図３Ｂに示すように、基板１１に透光キャップ１３が接合された円環状のキャップ接合層２２が形成される。 An annular bonding material is placed on the annular substrate metal layer 12, and by pressing and applying force F to the transparent cap 13 while heating, the substrate 11 is made transparent as shown in FIG. 3B. An annular cap bonding layer 22 to which the optical cap 13 is bonded is formed.

基板金属層１２は、基板１１上に、順にタングステン、ニッケル、金を積層した構造（Ｗ／Ｎｉ／Ａｕ）あるいは、ニッケルクロム、金、ニッケル、金 を積層した構造（ＮｉＣｒ／Ａｕ／Ｎｉ／Ａｕ）を有している。 The substrate metal layer 12 has a structure in which tungsten, nickel, and gold are laminated in this order on the substrate 11 (W/Ni/Au), or a structure in which nickel chromium, gold, nickel, and gold are laminated (NiCr/Au/Ni/Au). )have.

フランジ部１３Ｂの底面の金属層２１は、フランジ部１３Ｂの基材（ガラス）上に、順にクロム、ニッケル、金を積層した構造（Ｃｒ／Ｎｉ／Ａｕ）、あるいはチタン、パラジウム、銅、ニッケル、金を積層した構造（Ｔｉ／Ｐｄ／Ｃｕ／Ｎｉ／Ａｕ）を有している。 The metal layer 21 on the bottom surface of the flange part 13B has a structure (Cr/Ni/Au) in which chromium, nickel, and gold are laminated in this order on the base material (glass) of the flange part 13B, or titanium, palladium, copper, nickel, It has a structure in which gold is laminated (Ti/Pd/Cu/Ni/Au).

キャップ接合層２２となる接合材は、例えば、フラックスを含まない円環状のＡｕＳｎ（金スズ）シートであり、Ｓｎを２２ｗｔ％含有するもの（溶融温度：約３００℃）を用いた。金スズ合金シートの両表面に、Ａｕ（１０～３０ｎｍ）層を備えることもできる。ＡｕＳｎ合金の酸化を防ぎ、気密性を向上する。また、このＡｕ層は、溶融固化（接合）時に、キャップ接合層２２に溶解される。
［発光装置１０の製造方法］
以下に、発光装置１０の製造方法について、詳細かつ具体的に説明する。
（素子接合工程）
まず、基板１１の第１配線電極１４Ａ上にＡｕＳｎ揮発性ソルダーペーストはんだを塗布する。次に、発光素子１５を揮発性ソルダーペースト上に載せて、基板を３００℃まで加熱して、ＡｕＳｎを溶融・固化して第１配線電極１４Ａ上に発光素子１５を接合する。なお、保護素子１６を搭載する場合には同時に行う。このとき、揮発性ソルダーペーストに含まれるフラックスは殆ど揮発する。 The bonding material that becomes the cap bonding layer 22 is, for example, an annular AuSn (gold tin) sheet that does not contain flux and contains 22 wt % Sn (melting temperature: approximately 300° C.). Au (10-30 nm) layers can also be provided on both surfaces of the gold-tin alloy sheet. Prevents oxidation of AuSn alloy and improves airtightness. Further, this Au layer is dissolved into the cap bonding layer 22 during melting and solidification (bonding).
[Method for manufacturing light emitting device 10]
Below, the method for manufacturing the light emitting device 10 will be described in detail and specifically.
(Element bonding process)
First, AuSn volatile solder paste solder is applied onto the first wiring electrode 14A of the substrate 11. Next, the light emitting element 15 is placed on the volatile solder paste, the substrate is heated to 300° C., the AuSn is melted and solidified, and the light emitting element 15 is bonded onto the first wiring electrode 14A. Note that when mounting the protection element 16, it is carried out at the same time. At this time, most of the flux contained in the volatile solder paste evaporates.

次に、発光素子１５の上部電極のボンディングパッド１５Ｂと第２配線電極１４Ｂとの間をボンディングワイヤ１８Ｃ（Ａｕワイヤ）によって電気的に接続する。
（フラックス追揮発工程）
上記のように発光素子１５が接合された基板１１をヒーターにセットし、窒素雰囲気下で、アニール温度３２０℃で２０秒加熱して、揮発性ソルダーペーストの残留物（フラックス）を揮発させる。 Next, the bonding pad 15B of the upper electrode of the light emitting element 15 and the second wiring electrode 14B are electrically connected by a bonding wire 18C (Au wire).
(Flux volatilization process)
The substrate 11 to which the light emitting element 15 is bonded as described above is set in a heater and heated in a nitrogen atmosphere at an annealing temperature of 320° C. for 20 seconds to volatilize the volatile solder paste residue (flux).

追揮発温度の下限は、残留物（フラックス）が揮発する３００℃以上（すなわち、接合層２２の溶融温度以上）が好ましい。また、追揮発温度の上限は、接合層２２が再溶融しない温度以下、例えば３３０℃以下が好ましい。
（エキシマ光洗浄工程）
追揮発後の基板１１をエキシマ－光照射装置にセットし、2000 mJ/cm2以上のエキシマ光を基板に照射する。これにより、基板１１及び発光素子１５の表面に吸着している残留物（フラックス）を分解除去した。
（キャップ接合工程）
エキシマ光洗浄工程後の基板１１と、透光キャップ１３とをキャップ接合装置にセットする。次に、基板１１及び透光キャップ１３の雰囲気を真空状態にし、温度２７５℃で１５分加熱処理（アニール処理）する。 The lower limit of the additional volatilization temperature is preferably 300° C. or higher (that is, higher than the melting temperature of the bonding layer 22) at which the residue (flux) is volatilized. Further, the upper limit of the volatilization temperature is preferably below a temperature at which the bonding layer 22 does not re-melt, for example below 330°C.
(Excimer light cleaning process)
The substrate 11 after volatilization is set in an excimer light irradiation device, and the substrate is irradiated with excimer light of 2000 mJ/cm 2 or more. As a result, the residue (flux) adsorbed on the surfaces of the substrate 11 and the light emitting element 15 was decomposed and removed.
(Cap joining process)
The substrate 11 after the excimer light cleaning process and the transparent cap 13 are set in a cap bonding device. Next, the atmosphere around the substrate 11 and the transparent cap 13 is made into a vacuum state, and heat treatment (annealing treatment) is performed at a temperature of 275° C. for 15 minutes.

続いて、基板１１及び透光キャップ１３の雰囲気を封入ガスであるドライ窒素（Ｎ２）ガス、１気圧（１０１．３ｋＰａ）で満たす。次に、基板１１の基板金属層１２上に環状ＡｕＳｎシート（キャップ接合層２２の接合材）載せ、さらにその上に透光キャップ１３を載せ押圧する。 Subsequently, the atmosphere around the substrate 11 and the transparent cap 13 is filled with dry nitrogen (N 2 ) gas, which is a filler gas, at 1 atm (101.3 kPa). Next, an annular AuSn sheet (bonding material for the cap bonding layer 22) is placed on the substrate metal layer 12 of the substrate 11, and the transparent cap 13 is further placed on top of it and pressed.

図３Ａに示すように、透光キャップ１３を環状ＡｕＳｎシートに押圧しつつ、３２０℃まで加熱する。加熱により、ＡｕＳｎシートは押圧環２１Ａに密着した部分から内側および外側に向かって溶融し、金属層１２および２１の金を若干量溶融しつつ固化する、又は冷却により固化する。以上のように、基板１１及び透光キャップ１３が接合され、半導体発光装置１０が完成する。
［基板１１及びフランジ部１３Ｂの接合部］
上記した基板１１及びフランジ部１３Ｂの接合によって、図４Ａに示すように、押圧環２１Ａが溶融したＡｕＳｎを押し広げた円環状の領域が狭窄接合領域ＪＮを形成する。また、押圧環２１Ａの内側及び外側、すなわち狭窄接合領域ＪＮの内側及び外側に、上面視において（フランジ部１３Ｂに垂直な方向（ｚ方向）から視たとき）、それぞれ円環状の内側接合領域ＪＩと外側接合領域ＪＯが形成される。 As shown in FIG. 3A, the transparent cap 13 is heated to 320° C. while being pressed against the annular AuSn sheet. By heating, the AuSn sheet melts inward and outward from the portion in close contact with the pressing ring 21A, and solidifies while melting a small amount of gold in the metal layers 12 and 21, or solidifies by cooling. As described above, the substrate 11 and the transparent cap 13 are bonded, and the semiconductor light emitting device 10 is completed.
[Joint portion between substrate 11 and flange portion 13B]
By joining the substrate 11 and the flange portion 13B as described above, as shown in FIG. 4A, the annular region in which the pressing ring 21A expands the molten AuSn forms a narrowed joining region JN. In addition, an annular inner joint region JI is provided on the inside and outside of the pressing ring 21A, that is, on the inside and outside of the constriction joint region JN, when viewed from above (when viewed from the direction (z direction) perpendicular to the flange portion 13B). and an outer joining region JO is formed.

この場合、押圧環２１Ａの頂部及び基板金属層１２は、押圧環２１Ａの頂部の全周に渡って一定の間隔（間隙）ＧＡで接合される。なお、以下においては、説明及び理解の容易さのため、内側領域ＪＩ、狭窄接合領域ＪＮ及び外側接合領域ＪＯの幅をそれぞれ同一符号（ＪＩ、ＪＮ、ＪＯ）を用いて説明する。 In this case, the top of the pressing ring 21A and the substrate metal layer 12 are joined at a constant interval (gap) GA over the entire circumference of the top of the pressing ring 21A. Note that, in the following, for ease of explanation and understanding, the widths of the inner region JI, the narrowed junction region JN, and the outer junction region JO will be described using the same symbols (JI, JN, JO), respectively.

なお、上記接合工程において、さらに押圧環２１Ａが溶融したＡｕＳｎを押し広げ、押圧環２１Ａの頂部が基板金属層１２に突き当たるまで押圧することができる。この場合、図４Ｂに示すように、押圧環２１Ａの頂部と基板金属層１２とが接する円形状の接続線、すなわち押圧環２１Ａ及び基板金属層１２の間に接合材（ＡｕＳｎ）が存在しない円形状の接続部ＪＬが形成され、この部分に線状の気密構造が形成される。 In addition, in the above-mentioned joining process, the press ring 21A can further spread the molten AuSn and press it until the top of the press ring 21A abuts against the substrate metal layer 12. In this case, as shown in FIG. 4B, a circular connection line where the top of the pressing ring 21A and the substrate metal layer 12 touch, that is, a circle in which no bonding material (AuSn) is present between the pressing ring 21A and the substrate metal layer 12. A shaped connecting portion JL is formed, and a linear airtight structure is formed in this portion.

すなわち、押圧環２１Ａの頂部が基板金属層１２に密着した円形状の気密構造が形成される。この場合、円形状の接続部ＪＬにおいて、押圧環２１Ａの頂部及び基板金属層１２の間隔（間隙）ＧＡ＝０である。 That is, a circular airtight structure is formed in which the top of the pressing ring 21A is in close contact with the substrate metal layer 12. In this case, in the circular connecting portion JL, the distance (gap) between the top of the pressing ring 21A and the substrate metal layer 12 is GA=0.

上記したように、押圧環２１Ａによって、キャップ接合層２２は、押圧環２１Ａの中心を境に、内側接合領域ＪＩ、狭窄接合領域ＪＮ及び外側接合領域ＪＯの３領域に区分される。押圧環２１Ａは、接合材の押圧部であると同時に、キャップ接合層２２の領域区分、及び位置決めの機能を有する。 As described above, the pressing ring 21A divides the cap bonding layer 22 into three areas, the inner bonding area JI, the narrowing bonding area JN, and the outer bonding area JO, with the center of the pressing ring 21A as a border. The pressing ring 21A serves as a pressing part for the bonding material, and at the same time has the function of dividing and positioning the cap bonding layer 22.

また、押圧環２１Ａは、押圧環２１Ａの頂部と基板金属層１２との間の間隙（ギャップ）ＧＡの制御による接合材のオーバーフロー防止の機能を有する。 Further, the pressing ring 21A has a function of preventing overflow of the bonding material by controlling the gap GA between the top of the pressing ring 21A and the substrate metal layer 12.

内側接合領域ＪＩ及び外側接合領域ＪＯは、押圧環２１Ａに対してフィレットとしての機能を有し、シェア強度、すなわち横方向（接合面に平行な方向）の破壊強度を向上する。 The inner joint region JI and the outer joint region JO have a function as a fillet for the pressing ring 21A, and improve shear strength, that is, fracture strength in the lateral direction (direction parallel to the joint surface).

さらに、間隙ＧＡ＝０の場合には、狭窄接合領域ＪＮは、押圧環２１Ａの頂部と基板金属層１２とが位置ＪＬ（図４Ｂ）で線状（円状）に接した線状気密として働き、内側接合領域ＪＩ及び外側接合領域ＪＯは、帯状気密として働く。 Further, when the gap GA=0, the narrowed joint region JN acts as a linear airtight area where the top of the pressing ring 21A and the substrate metal layer 12 are linearly (circularly) in contact at position JL (FIG. 4B). , the inner joining region JI and the outer joining region JO act as a band-like airtight.

従って、接合結晶部を薄く、もしくは無くすことができ、リーク発生の原因となる金属粒界面の面積を極小化できるため、気密歩留まりを向上できる。 Therefore, the bonding crystal part can be thinned or eliminated, and the area of the metal grain interface that causes leakage can be minimized, so that the hermetic yield can be improved.

また、内側接合領域ＪＩ及び外側接合領域ＪＯのキャップ接合層２２は、押圧環２１Ａを起点に内側および外側に向かって溶融しつつ固化するので応力の内在を防ぎ、接合層２２を形成する金属粒界間に間隙ができることを防止できるため、気密歩留まりを向上できる。 In addition, since the cap bonding layer 22 of the inner bonding region JI and the outer bonding region JO melts and solidifies from the pressing ring 21A toward the inside and outside, stress is prevented from being present, and the metal particles forming the bonding layer 22 are solidified. Since it is possible to prevent gaps from forming between the boundaries, the hermetic yield can be improved.

狭窄接合領域を採用し、線状気密又は帯状気密にすることにより、接合不良が発生する領域を小さくできるため、気密性を向上することができる。また、リーク発生の原因となる金属粒界面の面積を極小化できるため、気密性を向上することができる。さらに、狭窄接合領域とその両側に気密構造を有するため高い気密信頼性が得られる。また、さらに、金属粒界間に間隙ができることを防止できるため、気密性を向上することができる。 By employing a narrowed joint region and creating a linear or band-like hermetic seal, the area where a joint failure occurs can be made smaller, and thus the airtightness can be improved. Furthermore, since the area of metal grain interfaces that cause leakage can be minimized, airtightness can be improved. Furthermore, since the narrow junction region and its both sides have an airtight structure, high airtight reliability can be obtained. Furthermore, since the formation of gaps between metal grain boundaries can be prevented, airtightness can be improved.

なお、押圧環２１Ａは、内側接合領域ＪＩ及び外側接合領域ＪＯの幅が等しくなる（すなわち、幅ＪＩ＝ＪＯ）ように構成されていることが好ましい。すなわち、押圧環２１Ａは、円環状のフランジ金属層２１（フランジ接合面）の当該円環の幅の中心を円周とする円に沿って設けられている。 In addition, it is preferable that the press ring 21A is configured so that the widths of the inner joint region JI and the outer joint region JO are equal (that is, width JI=JO). That is, the pressing ring 21A is provided along a circle whose circumference is the center of the width of the annular ring of the annular flange metal layer 21 (flange joint surface).

また、透光キャップ１３の窓部であるドーム部１３Ａの肉厚は、全体が等厚であるように、又は中央部を厚く（凸メニスカスレンズ）して配光を狭くし、又は周囲を厚く（凹メニスカスレンズ）して配光を広くすることができる
［第２の実施形態］
図５Ａは、本発明の第２の実施態様による半導体発光装置３０の上面を模式的に示す平面図である。図５Ｂ及び図５Ｃは、それぞれ半導体発光装置３０の側面及び裏面を模式的に示す図である。図５Ｄは、半導体発光装置３０の内部構造を模式的に示す図である。図５Ｅは、透光キャップ１３の１／４の部分を模式的に示す斜視図である。また、図６は、図５ＡのＢ－Ｂ線に沿った半導体発光装置３０の断面を模式的に示す断面図である。なお、図６は、図面及び説明の明確さのため透光キャップ１３の片側１／２の部分を示している。 The thickness of the dome portion 13A, which is the window portion of the light-transmitting cap 13, may be set so that the entire thickness is the same, or the center portion is thickened (convex meniscus lens) to narrow the light distribution, or the periphery is thickened. (Concave meniscus lens) to widen light distribution [Second embodiment]
FIG. 5A is a plan view schematically showing the top surface of a semiconductor light emitting device 30 according to the second embodiment of the present invention. 5B and 5C are diagrams schematically showing a side surface and a back surface of the semiconductor light emitting device 30, respectively. FIG. 5D is a diagram schematically showing the internal structure of the semiconductor light emitting device 30. FIG. 5E is a perspective view schematically showing a 1/4 portion of the transparent cap 13. FIG. Further, FIG. 6 is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 30 along line BB in FIG. 5A. Note that FIG. 6 shows 1/2 of one side of the light-transmitting cap 13 for clarity of drawing and explanation.

図５Ａ及び図５Ｂに示すように、半導体発光装置３０は、矩形の板形状の基板１１と、半円球状のガラスからなる透光性窓である透光キャップ１３と、が接合されて構成されている。より詳細には、図５Ｄに示すように、基板１１の上面上には、基板金属層１２が形成され、透光キャップ１３と接合されている。以下に、基板１１と透光キャップ１３のフランジ部１３Ｂとの接合について、より詳細に説明する。
（透光キャップ１３及びフランジ部１３Ｂ）
図５Ａ及び図６に示すように、第２の実施形態の透光キャップ１３は、半円球状の窓部であるドーム部１３Ａと、ドーム部１３Ａの底部に設けられたフランジ部１３Ｂとからなる。 As shown in FIGS. 5A and 5B, the semiconductor light emitting device 30 is constructed by bonding a rectangular plate-shaped substrate 11 and a transparent cap 13, which is a transparent window made of semicircular glass. ing. More specifically, as shown in FIG. 5D, a substrate metal layer 12 is formed on the upper surface of the substrate 11, and is bonded to a transparent cap 13. Below, the bonding between the substrate 11 and the flange portion 13B of the light-transmitting cap 13 will be described in more detail.
(Transparent cap 13 and flange portion 13B)
As shown in FIGS. 5A and 6, the light-transmitting cap 13 of the second embodiment includes a dome portion 13A, which is a semicircular window portion, and a flange portion 13B provided at the bottom of the dome portion 13A. .

図５Ａ及び図５Ｅに示すように、本実施形態の透光キャップ１３は、第１の実施形態の透光キャップ１３とは異なり、フランジ部１３Ｂは角柱状の外形を有している。より詳細には、フランジ部１３Ｂは外縁（外周）が矩形である板形状を有している。ここでは、フランジ部１３Ｂが正方形状の外縁を有している場合について説明する。なお、フランジ部１３Ｂの内縁はドーム部１３Ａの縁部に接続されており、円形状（中心：Ｃ）を有している。 As shown in FIGS. 5A and 5E, the light-transmitting cap 13 of this embodiment differs from the light-transmitting cap 13 of the first embodiment in that the flange portion 13B has a prismatic outer shape. More specifically, the flange portion 13B has a plate shape with a rectangular outer edge (outer circumference). Here, a case will be described in which the flange portion 13B has a square outer edge. Note that the inner edge of the flange portion 13B is connected to the edge of the dome portion 13A, and has a circular shape (center: C).

図５Ａ及び図６に示すように、フランジ部１３Ｂの底面には、ドーム部１３Ａと同心円（中心：Ｃ）の円環状の凸部１３Ｃが形成されている。円環状凸部１３Ｃの当該同心円の円周に垂直な断面形状は半円形であるが、これに限定されない。例えば、矩形状又は台形状であってもよい。 As shown in FIGS. 5A and 6, an annular convex portion 13C that is concentric with the dome portion 13A (center: C) is formed on the bottom surface of the flange portion 13B. The cross-sectional shape of the annular convex portion 13C perpendicular to the circumference of the concentric circle is semicircular, but is not limited to this. For example, it may be rectangular or trapezoidal.

さらに、正方形状の外縁を有するフランジ部１３Ｂの対角線ＤＬ上であって、円環状凸部１３Ｃの外側に円環状凸部１３Ｃから離間して半円球状の凸部１３Ｄが設けられている
（フランジ金属層２１）
また、図６に示すように、フランジ部１３Ｂの底面にはフランジ金属層２１が固着されている。すなわち、フランジ接合面は、内縁が円形状を有し、外縁が矩形状を有している。 Further, a semicircular convex portion 13D is provided on the diagonal line DL of the flange portion 13B having a square outer edge and on the outside of the annular convex portion 13C, spaced apart from the annular convex portion 13C. metal layer 21)
Further, as shown in FIG. 6, a flange metal layer 21 is fixed to the bottom surface of the flange portion 13B. That is, the flange joint surface has a circular inner edge and a rectangular outer edge.

凸部１３Ｃ及びフランジ金属層２１によって、フランジ部１３Ｂの底面に沿った円環状の凸部である押圧環２１Ａが形成されている。また、凸部１３Ｄの表面がフランジ金属層２１によって被覆された凸部である補助押圧部２１Ｂが形成されている。
（基板金属層１２）
図５Ａ及び図５Ｄに示すように、基板１１には、外縁が矩形形状の基板金属層１２が固着され、基板接合面が形成されている。すなわち、基板金属層１２は、内縁（内周）が円形状で外縁が矩形形状のフランジ部１３Ｂの底面に対応する形状を有している。また、基板金属層１２は、フランジ部１３Ｂの底面のフランジ金属層２１の全体を包含する大きさを有している。 The convex portion 13C and the flange metal layer 21 form a pressing ring 21A, which is an annular convex portion along the bottom surface of the flange portion 13B. Further, an auxiliary pressing portion 21B is formed, which is a convex portion in which the surface of the convex portion 13D is covered with the flange metal layer 21.
(Substrate metal layer 12)
As shown in FIGS. 5A and 5D, a substrate metal layer 12 having a rectangular outer edge is fixed to the substrate 11 to form a substrate bonding surface. That is, the substrate metal layer 12 has a shape corresponding to the bottom surface of the flange portion 13B, which has a circular inner edge (inner periphery) and a rectangular outer edge. Further, the substrate metal layer 12 has a size that includes the entire flange metal layer 21 on the bottom surface of the flange portion 13B.

基板金属層１２は、第１配線電極１４Ａ、第２配線電極１４Ｂ、発光素子１５及び保護素子１６とは電気的に絶縁され、これらの周囲を取り囲むように形成されている。 The substrate metal layer 12 is electrically insulated from the first wiring electrode 14A, the second wiring electrode 14B, the light emitting element 15, and the protection element 16, and is formed to surround these.

基板金属層１２上に、フランジ部１３Ｂの底面に対応する形状及び大きさを有する接合シートである接合層２２が載置され、加熱しつつ、透光キャップ１３に力Ｆを印加し押圧することによって、図６に示すように、基板１１と透光キャップ１３とを接合することができる。すなわち、フランジ金属層２１が接合層２２によって基板金属層１２に接合されることによって、基板１１と透光キャップ１３との気密が保たれている。
［基板１１及びフランジ部１３Ｂの接合部］
図７Ａは基板１１及びフランジ部１３Ｂの接合部を拡大して示す部分拡大断面図である。上記した基板１１及びフランジ部１３Ｂの接合によって、押圧環２１Ａが溶融したＡｕＳｎを押し広げた円環状の領域が第１の狭窄接合領域ＪＮ１を形成する。また、押圧環２１Ａの内側及び外側、すなわち第１の狭窄接合領域ＪＮ１の内側及び外側にそれぞれ内側接合領域ＪＩと中間接合領域ＪＭが形成される。 A bonding layer 22, which is a bonding sheet having a shape and size corresponding to the bottom surface of the flange portion 13B, is placed on the substrate metal layer 12, and is pressed by applying a force F to the transparent cap 13 while being heated. As shown in FIG. 6, the substrate 11 and the transparent cap 13 can be bonded together. That is, by bonding the flange metal layer 21 to the substrate metal layer 12 by the bonding layer 22, airtightness between the substrate 11 and the transparent cap 13 is maintained.
[Joint portion between substrate 11 and flange portion 13B]
FIG. 7A is a partially enlarged sectional view showing the joint between the substrate 11 and the flange portion 13B. By joining the substrate 11 and the flange portion 13B as described above, the annular region in which the pressing ring 21A spreads the molten AuSn forms the first narrowed joining region JN1. Furthermore, an inner joint region JI and an intermediate joint region JM are formed on the inside and outside of the pressing ring 21A, that is, on the inside and outside of the first narrow joint region JN1, respectively.

本実施形態の場合、内側接合領域ＪＩは、上面視において円環状形状を有する。また、中間接合領域ＪＭは、フランジ部１３Ｂの対角線ＤＬに沿った帯状の領域として形成される。 In the case of this embodiment, the inner joining region JI has an annular shape when viewed from above. Further, the intermediate joint region JM is formed as a belt-shaped region along the diagonal line DL of the flange portion 13B.

また、当該接合時に、補助押圧部２１Ｂによって、接合材ＡｕＳｎが押し広げた第２の狭窄接合領域ＪＮ２が形成される。すなわち、補助押圧部２１Ｂが半円球状の場合、フランジ部１３Ｂの対角線ＤＬ上であって押圧環２１Ａの外側に、上面視において（フランジ部１３Ｂに垂直な方向から視たとき）円形の第２の狭窄接合領域ＪＮ２が形成される。 Further, during the bonding, a second constricted bonding region JN2 is formed in which the bonding material AuSn is expanded by the auxiliary pressing portion 21B. That is, when the auxiliary pressing part 21B is semicircular, a circular second part is provided on the diagonal line DL of the flange part 13B and on the outside of the pressing ring 21A when viewed from above (when viewed from a direction perpendicular to the flange part 13B). A narrow junction region JN2 is formed.

第２の狭窄接合領域ＪＮ２の内側の領域は中間接合領域ＪＭであり、第２の狭窄接合領域ＪＮ２の外側には外側接合領域ＪＯが形成される。 A region inside the second narrowed junction region JN2 is an intermediate junction region JM, and an outer junction region JO is formed outside the second narrowed junction region JN2.

以下においては、補助押圧部２１Ｂの高さ（突起の高さ）Ｈ２は、押圧環２１Ａの高さＨ１よりも小さい場合について説明する。しかし、補助押圧部２１Ｂ及び押圧環２１Ａが同じ高さを有していてもよい（Ｈ１＝Ｈ２）。 In the following, a case will be described in which the height H2 of the auxiliary pressing portion 21B (height of the protrusion) is smaller than the height H1 of the pressing ring 21A. However, the auxiliary pressing portion 21B and the pressing ring 21A may have the same height (H1=H2).

押圧環２１Ａの頂部及び基板金属層１２は、間隙ＧＡを有して接合される。また、補助押圧部２１Ｂ及び基板金属層１２は、間隙ＧＢを有して接合され、間隙ＧＡは間隙ＧＢよりも小さい（ＧＡ＜ＧＢ）。 The top of the pressing ring 21A and the substrate metal layer 12 are joined with a gap GA. Further, the auxiliary pressing portion 21B and the substrate metal layer 12 are joined with a gap GB, and the gap GA is smaller than the gap GB (GA<GB).

なお、第１の実施形態の場合と同様に、上記接合工程において、さらに押圧環２１Ａが溶融したＡｕＳｎを押し広げ、押圧環２１Ａの頂部が基板金属層１２に突き当たるまで押圧することができる。この場合、図７Ｂに示すように、押圧環２１Ａの頂部と基板金属層１２とが直接に接する円形の接続線、すなわち押圧環２１Ａ及び基板金属層１２の間に接合材（ＡｕＳｎ）が存在しない円形の接続部ＪＬが形成され、線状の気密構造が形成される。 Note that, as in the case of the first embodiment, in the above bonding step, the press ring 21A can further spread the molten AuSn and press it until the top of the press ring 21A abuts against the substrate metal layer 12. In this case, as shown in FIG. 7B, there is no bonding material (AuSn) between the circular connection line where the top of the pressing ring 21A and the substrate metal layer 12 are in direct contact, that is, the pressing ring 21A and the substrate metal layer 12. A circular connecting portion JL is formed, and a linear airtight structure is formed.

すなわち、押圧環２１Ａの頂部が基板金属層１２に密着した円形状の気密構造が形成される。この場合、円形状の接続部ＪＬにおいて、押圧環２１Ａの頂部及び基板金属層１２の間隔（S間隙）ＧＡ＝０である。
（補助押圧部２１Ｂの機能）
基板１１とフランジ部１３Ｂとの接合（すなわち、接合材の溶融及び固化）は、押圧環２１Ａからフランジ１３Ｂの外側方向へ接合が進むのが好ましい。しかし、フランジ部１３Ｂが矩形の場合では、押圧環２１Ａから離れた部分において接合、すなわちＡｕＳｎ接合材の溶融及び固化が押圧環２１Ａの部分よりも遅れる場合がある。 That is, a circular airtight structure is formed in which the top of the pressing ring 21A is in close contact with the substrate metal layer 12. In this case, in the circular connecting portion JL, the distance (S gap) between the top of the pressing ring 21A and the substrate metal layer 12 (spacing) GA=0.
(Function of auxiliary pressing part 21B)
It is preferable that the bonding between the substrate 11 and the flange portion 13B (that is, melting and solidification of the bonding material) progresses from the pressing ring 21A toward the outside of the flange 13B. However, in the case where the flange portion 13B is rectangular, the joining, that is, the melting and solidification of the AuSn bonding material may be delayed in the portion away from the pressing ring 21A than in the portion of the pressing ring 21A.

本実施形態においては、押圧環２１Ａからの距離が遠いフランジ部１３Ｂの角部領域（対角線ＤＬ方向）に補助押圧部２１Ｂを設けているので、当該領域における接合遅れを防止でき、フランジ部１３Ｂの全面に渡る安定な接合が可能である。また、接合遅れを防止することでＡｕＳｎ接合材の結晶粒界間に間隙ができることも防止できる。
［第２の実施形態の改変例］
図８Ａは第２の実施形態の改変例であり、半導体発光装置３０の上面から視た構成を模式的に示す平面図である。また、図８Ｂは、フランジ部１３Ｂの角部を拡大して示す上面図である。本改変例においては、当該角部に複数の押圧要素２１Ｂ１，２１Ｂ２，２１Ｂ３からなる補助押圧部２１Ｂが設けられている。 In this embodiment, since the auxiliary pressing portion 21B is provided in the corner region of the flange portion 13B (in the direction of the diagonal line DL) which is far from the pressing ring 21A, it is possible to prevent a delay in joining in this region, and the flange portion 13B is Stable bonding over the entire surface is possible. Furthermore, by preventing the delay in bonding, it is also possible to prevent gaps from forming between grain boundaries of the AuSn bonding material.
[Modification example of second embodiment]
FIG. 8A is a modified example of the second embodiment, and is a plan view schematically showing the configuration of the semiconductor light emitting device 30 viewed from the top. Further, FIG. 8B is a top view showing an enlarged corner of the flange portion 13B. In this modified example, an auxiliary pressing portion 21B consisting of a plurality of pressing elements 21B1, 21B2, and 21B3 is provided at the corner.

より詳細には、上面視において矩形のフランジ部１３Ｂの対角線ＤＬ上に配された１つの押圧要素２１Ｂ１と、対角線ＤＬから外れた位置に複数の（本改変例では２つの）押圧要素２１Ｂ２，２１Ｂ３とが設けられている。このように複数の押圧要素２１Ｂｎ（ｎは２以上の整数）からなる補助押圧部２１Ｂを設ける場合には、少なくとも１つの押圧要素は対角線ＤＬ上に設けられていることが好ましい。また、補助押圧部２１Ｂは、フランジ部１３Ｂの４つの角部の全てに設けられていることが好ましい。 More specifically, one pressing element 21B1 is arranged on the diagonal line DL of the rectangular flange portion 13B when viewed from above, and a plurality of (two in this modified example) pressing elements 21B2 and 21B3 are located at positions off the diagonal line DL. and is provided. When providing the auxiliary pressing section 21B including a plurality of pressing elements 21Bn (n is an integer of 2 or more) in this way, it is preferable that at least one pressing element is provided on the diagonal line DL. Moreover, it is preferable that the auxiliary|assistant press part 21B is provided in all the four corner parts of the flange part 13B.

あるいは、図８Ｃに示すように、複数の押圧要素２１Ｂｎが、押圧環２１Ａと同心円ＣＣ（中心：Ｃ）の円周上に、すなわち押圧環２１Ａから等距離であるように配されていてもよい。 Alternatively, as shown in FIG. 8C, the plurality of pressing elements 21Bn may be arranged on the circumference of a concentric circle CC (center: C) with the pressing ring 21A, that is, at the same distance from the pressing ring 21A. .

また、図９は、他の改変例を示す上面図である。当該改変例においては、補助押圧部２１Ｂは、押圧環２１Ａの外側に、押圧環２１Ａと同心であり、押圧環２１Ａよりも径の大きな円環の一部である円環部分として対角線ＤＬ上に配されている場合を示している。 Moreover, FIG. 9 is a top view showing another modified example. In this modified example, the auxiliary pressing part 21B is provided on the diagonal line DL as a circular ring part that is concentric with the pressing ring 21A and has a larger diameter than the pressing ring 21A, on the outside of the pressing ring 21A. This shows the case where the

なお、補助押圧部２１Ｂとして、押圧環２１Ａと同心円環であり、押圧環２１Ａよりも径の大きな円環全体である補助押圧環を設けてもよい。 In addition, as the auxiliary|assistant press part 21B, you may provide the auxiliary|assistant press ring which is a circular ring concentric with 21 A of press rings, and is the whole ring with a diameter larger than 21 A of press rings.

本改変例においても、第２の実施形態と同様に、フランジ部１３Ｂの全面に渡る安定な接合が可能である。 Also in this modified example, as in the second embodiment, stable joining over the entire surface of the flange portion 13B is possible.

また、本実施形態においても、第１の実施形態と同様に、押圧環２１Ａによる領域区分、位置決めの機能、及び接合材のオーバーフロー防止の機能を有する。また、内側接合領域ＪＩ及び中間接合領域ＪＭは、押圧環２１Ａに対してフィレットとしての機能を有し、シェア強度の破壊強度を向上する機能を有する点も同様である。 Also, in this embodiment, similarly to the first embodiment, the press ring 21A has the function of area division and positioning, and the function of preventing overflow of the bonding material. Further, the inner joint region JI and the intermediate joint region JM have a function as a fillet for the pressing ring 21A, and similarly have a function of improving the breaking strength of the shear strength.

さらに、間隙ＧＡ＝０の場合には、狭窄接合領域ＪＮは、押圧環２１Ａの頂部と基板金属層１２とが位置ＪＬで直接に接し、線状（上面視で円形）に接した線状気密として働く。一方、内側接合領域ＪＩ及び中間接合領域ＪＭは帯状気密として働く。
［さらなる改変例］
上記した実施形態においては、フランジ部１３Ｂの外縁が円形状を有する場合（第１の実施形態）、及び矩形の場合（第２の実施形態）について説明したが、フランジ部１３Ｂの外縁はｎ角形（ｎは３以上の整数）の多角形状を有する場合であってもよい。 Further, when the gap GA=0, the narrowed joint area JN is a linear airtight area in which the top of the pressing ring 21A and the substrate metal layer 12 directly contact each other at a position JL, and are linearly (circular in top view) in contact with each other. Work as. On the other hand, the inner joint region JI and the intermediate joint region JM function as a belt-like airtight member.
[Further modification examples]
In the embodiments described above, the case where the outer edge of the flange portion 13B has a circular shape (first embodiment) and the case where it has a rectangular shape (second embodiment) has been described, but the outer edge of the flange portion 13B has an n-gon shape. (n is an integer of 3 or more) may have a polygonal shape.

フランジ部１３Ｂの外縁が円形状又はｎ角形状を有する場合、図１１に示すように、押圧環２１Ａの外側に、補助押圧部２１Ｂとして押圧環２１Ａと同心であり、フランジ部１３Ｂの底面の平坦部から突出した円環状凸部であって押圧環２１Ａよりも径の大きな補助押圧環２１Ｃを設けてもよい。 When the outer edge of the flange portion 13B has a circular shape or an n-gon shape, as shown in FIG. An auxiliary pressing ring 21C, which is an annular convex portion protruding from the portion and having a larger diameter than the pressing ring 21A, may be provided.

また、フランジ部１３Ｂの外縁（外形）がｎ角形状（ｎは３以上の整数）を有する場合においても、補助押圧部２１Ｂとして押圧環２１Ａと同心円環であり、押圧環２１Ａよりも径の大きな補助押圧環を設けてもよい。特に、フランジ部１３Ｂの外形が回転対称性の低い、又は回転対称性を有しない形状を有する場合に、高い気密性を得ることができる。 Further, even when the outer edge (outside shape) of the flange portion 13B has an n-gon shape (n is an integer of 3 or more), the auxiliary pressing portion 21B is a concentric ring with the pressing ring 21A, and has a larger diameter than the pressing ring 21A. An auxiliary pressing ring may also be provided. In particular, when the outer shape of the flange portion 13B has a shape with low or no rotational symmetry, high airtightness can be obtained.

なお、上記した実施形態及び改変例においては、押圧環２１Ａ及び補助押圧部２１Ｂが、凸部１３Ｃ及び１３Ｄを有するフランジ部１３Ｂの底面に金属が被覆された構成として説明したが、これに限定されない。 In addition, in the above-described embodiment and modification example, the press ring 21A and the auxiliary press part 21B have been described as having a configuration in which the bottom surface of the flange part 13B having the convex parts 13C and 13D is coated with metal, but the present invention is not limited to this. .

例えば、図１０に示すように、フランジ部１３Ｂの底面の全体又は一部が平坦面であって、当該底面上に金属層が押圧環２１Ａ又は補助押圧部２１Ｂとして機能する凸部を有するように構成されていてもよい。図１０は第２の実施形態の場合について示す断面図であるが、第１の実施形態の場合についても同様に適用可能である。また、当該凸部は、断面が半円状に限らず、矩形状、台形状、逆三角状（Ｖ字状）であってもよい。 For example, as shown in FIG. 10, the entire or part of the bottom surface of the flange portion 13B is a flat surface, and the metal layer has a convex portion functioning as the pressing ring 21A or the auxiliary pressing portion 21B on the bottom surface. may be configured. Although FIG. 10 is a sectional view showing the case of the second embodiment, it is similarly applicable to the case of the first embodiment. Further, the cross section of the convex portion is not limited to a semicircular shape, but may be rectangular, trapezoidal, or inverted triangular (V-shaped).

また、上記した半導体材料及び金属材料、数値等は、特記した場合を除いて、例示であり、限定的に解釈されない。また、本明細書において、用語「円環」は、楕円環、長円環、オーバル形の環等を含み、円、円球等についても同様である。また、用語「矩形」は、正方形、長方形、及びこれらの角部が面取りされた形状を含む。 Further, the semiconductor materials, metal materials, numerical values, etc. described above are merely examples, and should not be interpreted in a limited manner, unless otherwise specified. Further, in this specification, the term "circle" includes an elliptical ring, an elliptical ring, an oval ring, etc., and the same applies to a circle, a round sphere, etc. Furthermore, the term "rectangle" includes squares, rectangles, and shapes with chamfered corners.

以上、詳細に説明したように、本発明によれば、高接合性及び高気密性を有するとともに、多湿などの悪環境下においても高い耐環境性を有する、高信頼度及び長寿命の半導体装置を提供することができる。 As described in detail above, according to the present invention, a highly reliable and long-life semiconductor device has high bonding properties and high airtightness, and also has high environmental resistance even in adverse environments such as high humidity. can be provided.

１０，３０ 半導体発光装置
１１ 基板
１２ 基板金属層
１３ 透光キャップ
１３Ａ 窓部
１３Ｂ フランジ部
１３Ｃ，１３Ｄ 凸部
２１ フランジ金属層
２１Ａ 押圧環
２１Ｂ 補助押圧部
２１Ｂ１，２１Ｂ２，２１Ｂ３ 補助押圧要素
２１Ｃ 補助押圧環
２２ キャップ接合層
Ｃ 円中心
ＣＣ 同心円
ＧＡ，ＧＢ 間隙
ＤＬ 対角線
ＪＩ 内側接合領域
ＪＭ 中間接合領域
ＪＮ，ＪＮ１，ＪＮ２ 狭窄接合領域
ＪＯ 外側接合領域 10, 30 Semiconductor light emitting device 11 Substrate 12 Substrate metal layer 13 Transparent cap 13A Window portion 13B Flange portion 13C, 13D Convex portion 21 Flange metal layer 21A Pressing ring 21B Auxiliary pressing portion 21B1, 21B2, 21B3 Auxiliary pressing element 21C Auxiliary pressing ring 22 Cap bonding layer C Circle center CC Concentric circle GA, GB Gap DL Diagonal JI Inner bonding area JM Middle bonding area JN, JN1, JN2 Narrowing bonding area JO Outer bonding area

Claims (14)

半導体発光素子と、
前記半導体発光素子が搭載されるとともに、基板金属層で被覆された基板接合面を有する基板と、
前記半導体発光素子の放射光を透過する窓部と、内縁が円形状のフランジ接合面を有するフランジとを備え、前記半導体発光素子を収容する空間を有して前記基板に封止接合された透光性キャップを有し、
前記フランジ接合面は、表面が金属層であり、平坦部と前記平坦部から突出し当該円形状の前記内縁と同心の円環状凸部である押圧環とを有し、
前記基板金属層及び前記金属層は、前記基板金属層と前記押圧環の頂部とが一定の間隔で接合材によって接合されている、半導体発光装置。 A semiconductor light emitting device,
a substrate on which the semiconductor light emitting element is mounted and has a substrate bonding surface covered with a substrate metal layer;
A transparent transparent material having a window portion that transmits light emitted from the semiconductor light emitting device, and a flange having a circular inner edge and a flange joint surface, having a space for accommodating the semiconductor light emitting device, and sealingly bonded to the substrate. has a photosensitive cap;
The flange joint surface has a metal layer on the surface, and has a flat part and a pressing ring that protrudes from the flat part and is an annular convex part concentric with the circular inner edge,
The substrate metal layer and the metal layer are semiconductor light emitting devices, wherein the substrate metal layer and the top of the pressing ring are bonded to each other at regular intervals using a bonding material. 前記フランジ接合面は円環形状を有し、
前記押圧環は、前記フランジ接合面の当該円環と同心である同心円に沿って設けられている、請求項１に記載の半導体発光装置。 The flange joint surface has an annular shape,
2. The semiconductor light emitting device according to claim 1, wherein the pressing ring is provided along a concentric circle that is concentric with the ring on the flange joint surface. 前記押圧環は、前記フランジ接合面の当該円環の幅の中心を円周とする前記同心円に沿って設けられている、請求項２に記載の半導体発光装置。 3. The semiconductor light emitting device according to claim 2, wherein the pressing ring is provided along the concentric circle whose circumference is the center of the width of the ring on the flange joint surface. 前記押圧環は、前記同心円の円周に垂直な断面において半円形状、矩形状又は台形状を有する、請求項２または３に記載の半導体発光装置。 4. The semiconductor light emitting device according to claim 2 , wherein the pressing ring has a semicircular shape, a rectangular shape, or a trapezoidal shape in a cross section perpendicular to the circumference of the concentric circle. 前記押圧環の頂部及び前記基板金属層は、前記押圧環の頂部の全周に渡って一定の間隙で接合されている、請求項１ないし４のいずれか一項に記載の半導体発光装置。 5. The semiconductor light emitting device according to claim 1, wherein the top of the pressing ring and the substrate metal layer are joined with a constant gap over the entire circumference of the top of the pressing ring. 前記押圧環は、前記押圧環の頂部の全周に渡って前記頂部が前記基板金属層に直接に接している、請求項１ないし５のいずれか一項に記載の半導体発光装置。 6. The semiconductor light emitting device according to claim 1, wherein the pressing ring has a top portion directly in contact with the substrate metal layer over the entire circumference of the top portion of the pressing ring. 前記フランジ接合面は、前記押圧環と同心であり、前記平坦部から突出した円環状凸部であって前記押圧環よりも径の大きな補助押圧環を有する、請求項１ないし６のいずれか一項に記載の半導体発光装置。 Any one of claims 1 to 6, wherein the flange joint surface is concentric with the pressing ring and has an auxiliary pressing ring that is an annular convex portion protruding from the flat portion and has a larger diameter than the pressing ring. The semiconductor light-emitting device described in . 前記フランジ接合面は矩形状の外縁を有し、
前記フランジ接合面は、前記フランジ接合面の対角線上であって、前記押圧環の外側に、前記平坦部から突出した凸部である補助押圧部をさらに有する、請求項１ないし７のいずれか一項に記載の半導体発光装置。 The flange joint surface has a rectangular outer edge,
The flange joint surface further includes an auxiliary pressing portion that is a convex portion protruding from the flat portion on a diagonal line of the flange joint surface and on the outside of the pressing ring. The semiconductor light-emitting device described in . 前記補助押圧部の突出高さは前記押圧環の突出高さよりも小さい、請求項８に記載の半導体発光装置。 9. The semiconductor light emitting device according to claim 8, wherein the protruding height of the auxiliary pressing part is smaller than the protruding height of the pressing ring. 前記補助押圧部は、複数の補助押圧要素からなり、前記複数の補助押圧要素のうち少なくとも１つは前記対角線上に位置している、請求項８又は９に記載の半導体発光装置。 The semiconductor light emitting device according to claim 8 or 9, wherein the auxiliary pressing section includes a plurality of auxiliary pressing elements, and at least one of the plurality of auxiliary pressing elements is located on the diagonal line. 前記複数の補助押圧要素は、前記押圧環の外側であって、前記押圧環の同心円上に配されている、請求項１０に記載の半導体発光装置。 The semiconductor light emitting device according to claim 10 , wherein the plurality of auxiliary pressing elements are arranged outside the pressing ring and on a concentric circle of the pressing ring. 前記半導体発光素子は窒化アルミ系の発光素子である、請求項１ないし１１のいずれか一項に記載の半導体発光装置。 12. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is an aluminum nitride light emitting element. 前記半導体発光素子は、波長２６５～４１５ｎｍの紫外光を発光する発光素子である、請求項１２に記載の半導体発光装置。 13. The semiconductor light emitting device according to claim 12, wherein the semiconductor light emitting element is a light emitting element that emits ultraviolet light with a wavelength of 265 to 415 nm. 前記透光性キャップは、石英ガラス又はホウ珪酸ガラスからなる、請求項１ないし１３のいずれか一項に記載の半導体発光装置。
 14. The semiconductor light emitting device according to claim 1, wherein the light-transmitting cap is made of quartz glass or borosilicate glass.
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