JP7432906B2 - 電極活物質、電極、電気化学デバイス、モジュール及び方法 - Google Patents
電極活物質、電極、電気化学デバイス、モジュール及び方法 Download PDFInfo
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- JP7432906B2 JP7432906B2 JP2023029337A JP2023029337A JP7432906B2 JP 7432906 B2 JP7432906 B2 JP 7432906B2 JP 2023029337 A JP2023029337 A JP 2023029337A JP 2023029337 A JP2023029337 A JP 2023029337A JP 7432906 B2 JP7432906 B2 JP 7432906B2
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- anhydride
- carbonate
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- 239000007772 electrode material Substances 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 28
- -1 fluoride ions Chemical class 0.000 claims description 168
- 229910052731 fluorine Inorganic materials 0.000 claims description 114
- 150000001875 compounds Chemical class 0.000 claims description 85
- 229910052744 lithium Inorganic materials 0.000 claims description 81
- 239000008151 electrolyte solution Substances 0.000 claims description 67
- 239000011737 fluorine Substances 0.000 claims description 61
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 60
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 59
- 239000003575 carbonaceous material Substances 0.000 claims description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 30
- 238000007599 discharging Methods 0.000 claims description 25
- 239000011135 tin Substances 0.000 claims description 17
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 16
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 13
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 238000004458 analytical method Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
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- 239000010439 graphite Substances 0.000 claims description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 description 145
- 125000004432 carbon atom Chemical group C* 0.000 description 99
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- 239000002904 solvent Substances 0.000 description 57
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- 125000005843 halogen group Chemical group 0.000 description 42
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- 125000003118 aryl group Chemical group 0.000 description 31
- 125000001424 substituent group Chemical group 0.000 description 28
- 239000007774 positive electrode material Substances 0.000 description 26
- 150000005678 chain carbonates Chemical class 0.000 description 25
- 150000002430 hydrocarbons Chemical group 0.000 description 25
- 239000000203 mixture Substances 0.000 description 25
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 24
- 125000004093 cyano group Chemical group *C#N 0.000 description 22
- 150000002170 ethers Chemical class 0.000 description 22
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- 239000011230 binding agent Substances 0.000 description 18
- 238000003860 storage Methods 0.000 description 18
- 239000010936 titanium Substances 0.000 description 18
- 229910019142 PO4 Inorganic materials 0.000 description 17
- 125000000524 functional group Chemical group 0.000 description 17
- 235000021317 phosphate Nutrition 0.000 description 17
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- 238000006713 insertion reaction Methods 0.000 description 16
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- 229910003002 lithium salt Inorganic materials 0.000 description 16
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- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 14
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 14
- 229910001416 lithium ion Inorganic materials 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 14
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 13
- 125000003342 alkenyl group Chemical group 0.000 description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 13
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 125000000732 arylene group Chemical group 0.000 description 11
- 238000009835 boiling Methods 0.000 description 11
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 239000011255 nonaqueous electrolyte Substances 0.000 description 11
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 11
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 10
- 239000004698 Polyethylene Substances 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 239000007983 Tris buffer Substances 0.000 description 10
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- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 10
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- 150000002500 ions Chemical class 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
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- 229910052717 sulfur Inorganic materials 0.000 description 10
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 10
- VAYTZRYEBVHVLE-UHFFFAOYSA-N 1,3-dioxol-2-one Chemical group O=C1OC=CO1 VAYTZRYEBVHVLE-UHFFFAOYSA-N 0.000 description 9
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- MUTGBJKUEZFXGO-UHFFFAOYSA-N hexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21 MUTGBJKUEZFXGO-UHFFFAOYSA-N 0.000 description 1
- YAPPHJBROGJEPD-UHFFFAOYSA-N hexane-1,3,5-tricarbonitrile Chemical compound N#CC(C)CC(C#N)CCC#N YAPPHJBROGJEPD-UHFFFAOYSA-N 0.000 description 1
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- ANJPRQPHZGHVQB-UHFFFAOYSA-N hexyl isocyanate Chemical compound CCCCCCN=C=O ANJPRQPHZGHVQB-UHFFFAOYSA-N 0.000 description 1
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- 238000006460 hydrolysis reaction Methods 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- LRDFRRGEGBBSRN-UHFFFAOYSA-N isobutyronitrile Chemical compound CC(C)C#N LRDFRRGEGBBSRN-UHFFFAOYSA-N 0.000 description 1
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- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- LAQPNDIUHRHNCV-UHFFFAOYSA-N isophthalonitrile Chemical compound N#CC1=CC=CC(C#N)=C1 LAQPNDIUHRHNCV-UHFFFAOYSA-N 0.000 description 1
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- 229910052745 lead Inorganic materials 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
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- VRQMRGCRRPGZNH-UHFFFAOYSA-M lithium 2,2,2-trifluoroethyl sulfate Chemical compound S(=O)(=O)(OCC(F)(F)F)[O-].[Li+] VRQMRGCRRPGZNH-UHFFFAOYSA-M 0.000 description 1
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 description 1
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- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
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- IGILRSKEFZLPKG-UHFFFAOYSA-M lithium;difluorophosphinate Chemical compound [Li+].[O-]P(F)(F)=O IGILRSKEFZLPKG-UHFFFAOYSA-M 0.000 description 1
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- ZDGGJQMSELMHLK-UHFFFAOYSA-N m-Trifluoromethylhippuric acid Chemical compound OC(=O)CNC(=O)C1=CC=CC(C(F)(F)F)=C1 ZDGGJQMSELMHLK-UHFFFAOYSA-N 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- CUONGYYJJVDODC-UHFFFAOYSA-N malononitrile Chemical compound N#CCC#N CUONGYYJJVDODC-UHFFFAOYSA-N 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- GBPVMEKUJUKTBA-UHFFFAOYSA-N methyl 2,2,2-trifluoroethyl carbonate Chemical class COC(=O)OCC(F)(F)F GBPVMEKUJUKTBA-UHFFFAOYSA-N 0.000 description 1
- JMKJCPUVEMZGEC-UHFFFAOYSA-N methyl 2,2,3,3,3-pentafluoropropanoate Chemical compound COC(=O)C(F)(F)C(F)(F)F JMKJCPUVEMZGEC-UHFFFAOYSA-N 0.000 description 1
- CSSYKHYGURSRAZ-UHFFFAOYSA-N methyl 2,2-difluoroacetate Chemical compound COC(=O)C(F)F CSSYKHYGURSRAZ-UHFFFAOYSA-N 0.000 description 1
- CTSAXXHOGZNKJR-UHFFFAOYSA-N methyl 2-diethoxyphosphorylacetate Chemical compound CCOP(=O)(OCC)CC(=O)OC CTSAXXHOGZNKJR-UHFFFAOYSA-N 0.000 description 1
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- RVNWLMWNUJPCQD-UHFFFAOYSA-N methyl 4,4,4-trifluorobutanoate Chemical compound COC(=O)CCC(F)(F)F RVNWLMWNUJPCQD-UHFFFAOYSA-N 0.000 description 1
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- BYVCTYDTPSKPRM-UHFFFAOYSA-N naphthalene-1-carbonyl naphthalene-1-carboxylate Chemical compound C1=CC=C2C(C(OC(=O)C=3C4=CC=CC=C4C=CC=3)=O)=CC=CC2=C1 BYVCTYDTPSKPRM-UHFFFAOYSA-N 0.000 description 1
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- 150000004010 onium ions Chemical class 0.000 description 1
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- PFPYHYZFFJJQFD-UHFFFAOYSA-N oxalic anhydride Chemical compound O=C1OC1=O PFPYHYZFFJJQFD-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 230000036961 partial effect Effects 0.000 description 1
- 238000003921 particle size analysis Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0564—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of organic materials only
- H01M10/0566—Liquid materials
- H01M10/0569—Liquid materials characterised by the solvents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
本開示は、炭素材料を含み、放電時、金属フッ化物が形成され、充電時、前記金属フッ化物から脱離したフッ化物イオンが前記炭素材料に挿入される電極活物質(以下、「本開示の第1の電極活物質」とも記載する。)に関する。
本開示はまた、放電後、炭素材料及び金属フッ化物を含み、充電後、前記炭素材料にフッ化物イオンが挿入されている電極活物質(以下、「本開示の第2の電極活物質」とも記載する。)に関する。
また、正極及び負極間でフッ化物イオンをやり取りするロッキングチェア型の二次電池とする場合、フッ化物イオンを吸蔵・脱離できる電極材料を正極及び負極の両方に使用する必要があるが、このような電極材料には限りがあるため、電池設計の幅に制限があった。
本開示の第2の電極活物質は、上述のコンバージョン反応を経たインサーション反応が生じる電極活物質を、本開示の第1の電極活物質とは異なる表現で記載したものである。
以下、本開示の第1の電極活物質及び本開示の第2の電極活物質を総称して、本開示の電極活物質とも記載する。
そして、特許文献1の実施例は、作動電圧が4.8Vであるため、実験1の比較例と同様、上述のコンバージョン反応を経たインサーション反応が生じていないと考えられる。
上記アニオン受容体として例示されているのは、AR1~AR3で示された構造を有するホウ素系の化合物であるが、後述の実験2の比較例で示しているように、当該化合物を電解液の材料として使用した場合、作動電圧を5V以上にしても、良好なサイクル性能は得られない。よって、上記アニオン受容体を使用した場合、フッ化物塩のフッ化物イオンに配位する上記アニオン受容体がフッ化物イオンの生成を促進させ、フッ化物イオンと正負極両方の活物質との反応が優先的に進行し、上述の単極でのコンバージョン反応を経たインサーション反応が生じていないと考えられる。
上記カチオン受容体として例示されているのはクラウンエーテル類等であるが、これらを使用した場合、フッ化物塩の金属イオンに配位する上記カチオン受容体がフッ化物イオンの生成を促進させ、フッ化物イオンと正負極両方の活物質との反応が優先的に進行し、上記アニオン受容体を使用した場合と同様、上述の単極でのコンバージョン反応を経たインサーション反応が生じていないと考えられる。
上記表面のフッ素濃度は、アルゴンイオンエッチングを用いたXPS測定によって評価できる。例えばアルゴンイオンエッチング(10mA、0.5kV)のもと、C1sにおけるCF2に相当するピークの経時変化に関して、(100秒後のピーク強度)/(0秒時のピーク強度)の値を表面フッ素指数Iとしたとき、本開示の電極活物質では、このIが好ましくは0.30以下、より好ましくは0.20以下、更に好ましくは0.10以下である。下限は特に限定されないが、好ましくは0.01以上である。
ここで、CF2に相当するピークは、原料となる炭素材料の種類やスパッタの進行度合いにより、295eV~290eVの範囲で移動する。本明細書において、CF2に相当するピークのピーク強度は、ピークトップが明瞭である場合はピークトップ、ピークトップが明瞭でない場合は上記領域での最大値とする。
本開示の電極活物質の比表面積は、好ましくは100m2/g以上、より好ましくは150m2/g以上、更に好ましくは300m2/g以上であり、また、好ましくは3000m2/g以下、より好ましくは2000m2/g以下、更に好ましくは1000m2/g以下、更により好ましくは500m2/g以下である。
上記比表面積は窒素ガス吸着法によるBET法で解析して求めた値である。
また、本開示の電極活物質がCFxで表されるフッ化カーボンである場合、xが上述の範囲であれば、フッ化カーボンの比表面積が前段落に記載した範囲内に収まりやすい傾向がある。
また、状態2は、充電後、放電後、充放電の途中、のいずれであってもよい。
本開示はまた、本開示の電極活物質を含む電極にも関する。
また、上記正極活物質層は、正極活物質を含む正極合剤で構成される。
上記正極活物質としては、電気二重層容量を付与し得る高比表面積材料や、電気化学的にリチウムイオンを吸蔵・放出可能な材料等を用いることができ、具体的には、リチウム含有遷移金属複合酸化物、リチウム含有遷移金属リン酸化合物、硫化物(硫黄系材料)、導電性高分子等が挙げられる。なかでも、リチウム含有遷移金属複合酸化物、リチウム含有遷移金属リン酸化合物が好ましく、特に、高電圧を産み出すリチウム含有遷移金属複合酸化物が好ましい。
上記結着剤としては、電極製造時に使用する溶媒や電解液に対して安全な材料であれば、任意のものを使用することができ、例えば、ポリエチレン、ポリプロピレン、ポリエチレンテレフタレート、ポリメチルメタクリレート、芳香族ポリアミド、キトサン、アルギン酸、ポリアクリル酸、ポリイミド、セルロース、ニトロセルロース等の樹脂系高分子;SBR(スチレン・ブタジエンゴム)、イソプレンゴム、ブタジエンゴム、フッ素ゴム、NBR(アクリロニトリル・ブタジエンゴム)、エチレン・プロピレンゴム等のゴム状高分子;スチレン・ブタジエン・スチレンブロック共重合体又はその水素添加物;EPDM(エチレン・プロピレン・ジエン三元共重合体)、スチレン・エチレン・ブタジエン・スチレン共重合体、スチレン・イソプレン・スチレンブロック共重合体又はその水素添加物等の熱可塑性エラストマー状高分子;シンジオタクチック-1,2-ポリブタジエン、ポリ酢酸ビニル、エチレン・酢酸ビニル共重合体、プロピレン・α-オレフィン共重合体等の軟質樹脂状高分子;ポリフッ化ビニリデン、ポリテトラフルオロエチレン、フッ化ビニリデン共重合体、テトラフルオロエチレン・エチレン共重合体等のフッ素系高分子;アルカリ金属イオン(特にリチウムイオン)のイオン伝導性を有する高分子組成物等が挙げられる。これらは、1種を単独で用いても、2種以上を任意の組み合わせ及び比率で併用してもよい。
本開示はまた、本開示の電極を含む電気化学デバイスにも関する。
一方、本開示の電気化学デバイスは、本開示の電極において、上述のコンバージョン反応を経たインサーション反応を利用して充放電を行うものであるため、反応物質を電解液中に貯蔵し、電極近傍の反応物質と反応するリザーブ型の二次電池とすることができる。これにより、上述のロッキングチェア型の二次電池のように、電解液中のフッ化物イオン濃度を高くしなくても、十分な充放電を行うことが可能となる。
以下、本開示の電気化学デバイスをリザーブ型の二次電池とする場合の好適な構成について、より詳細に説明する。
本開示の電気化学デバイスにおいて、正極は、上述の本開示の電極であることが好ましい。
負極は、負極活物質を含む負極活物質層と、集電体とから構成される。
また、Si又はSnを第一の構成元素とし、それに加えて第2、第3の構成元素を含む複合材料が挙げられる。第2の構成元素は、例えば、コバルト、鉄、マグネシウム、チタン、バナジウム、クロム、マンガン、ニッケル、銅、亜鉛、ガリウム及びジルコニウムのうち少なくとも1種である。第3の構成元素は、例えば、ホウ素、炭素、アルミニウム及びリンのうち少なくとも1種である。
特に、高い電池容量及び優れた電池特性が得られることから、上記金属材料として、ケイ素又はスズの単体(微量の不純物を含んでよい)、SiOv(0<v≦2)、SnOw(0≦w≦2)、Si-Co-C複合材料、Si-Ni-C複合材料、Sn-Co-C複合材料、Sn-Ni-C複合材料が好ましい。
LixTiyMzO4
[式中、Mは、Na、K、Co、Al、Fe、Ti、Mg、Cr、Ga、Cu、Zn及びNbからなる群より選ばれる少なくとも1種の元素を表わす。]
で表される化合物であることが好ましい。
上記組成の中でも、
(i)1.2≦x≦1.4、1.5≦y≦1.7、z=0
(ii)0.9≦x≦1.1、1.9≦y≦2.1、z=0
(iii)0.7≦x≦0.9、2.1≦y≦2.3、z=0
の構造が、電池性能のバランスが良好なため特に好ましい。
水系溶媒としては、水、アルコール等が挙げられ、有機系溶媒としてはN-メチルピロリドン(NMP)、N-ブチルピロリドン(NBP)、3-メトキシ-N,N-ジメチルプロピオンアミド、ジメチルホルムアミド、ジメチルアセトアミド、メチルエチルケトン、シクロヘキサノン、酢酸メチル、アクリル酸メチル、ジエチルトリアミン、N,N-ジメチルアミノプロピルアミン、テトラヒドロフラン(THF)、トルエン、アセトン、ジエチルエーテル、ジメチルアセトアミド、ヘキサメチルホスファルアミド、ジメチルスルホキシド、ベンゼン、キシレン、キノリン、ピリジン、メチルナフタレン、ヘキサン等が挙げられる。
電解質は、溶媒及び電解質塩を含む電解液であってもよいし、固体電解質であってもよい。
また、上記溶媒として、これらのフッ素化物を用いてフッ素系電解液とすることで、高電圧を特徴とするフッ化物イオン電池においても、サイクル性能をより良好に維持することが可能となる。
なお、本明細書において「高電圧」とは、4.2V以上の電圧をいう。また、「高電圧」の上限は5.5Vが好ましく、5.4Vがより好ましい。
なお、本明細書中で「エーテル結合」は、-O-で表される結合である。
炭素数が大きくなりすぎると低温特性が低下したり、電解質塩の溶解性が低下したりするおそれがあり、炭素数が少な過ぎると、電解質塩の溶解性の低下、放電効率の低下、更には粘性の増大等がみられることがある。
Ra1-Ra2- (a-1)
(式中、Ra1はフッ素原子を有していてもよい炭素数1以上のアルキル基;Ra2はフッ素原子を有していてもよい炭素数1~3のアルキレン基;ただし、Ra1及びRa2の少なくとも一方はフッ素原子を有している)で示されるフッ素化アルキル基が、電解質塩の溶解性が良好な点から好ましく例示できる。
なお、Ra1及びRa2は、更に、炭素原子、水素原子及びフッ素原子以外の、その他の原子を有していてもよい。
-CH2-、-CHF-、-CF2-、-CHCl-、-CFCl-、-CCl2-
-CH2-、-CHF-、-CF2-、-CHCl-、-CFCl-、-CCl2-
R3-(OR4)n1- (b-1)
(式中、R3はフッ素原子を有していてもよい、好ましくは炭素数1~6のアルキル基;R4はフッ素原子を有していてもよい、好ましくは炭素数1~4のアルキレン基;n1は1~3の整数;ただし、R3及びR4の少なくとも1つはフッ素原子を有している)で示されるものが挙げられる。
フッ素化アルキル基(a)、エーテル結合を有するフッ素化アルキル基(b)、及び、フッ素化アルコキシ基(c)のフッ素含有率は、各基の構造式に基づいて、{(フッ素原子の個数×19)/各基の式量}×100(%)により算出した値である。
なお、上記フッ素化飽和環状カーボネートのフッ素含有率は、フッ素化飽和環状カーボネートの構造式に基づいて、{(フッ素原子の個数×19)/フッ素化飽和環状カーボネートの分子量}×100(%)により算出した値である。
Rf2OCOOR7 (B)
(式中、Rf2は、炭素数1~7のフッ素化アルキル基であり、R7は、炭素数1~7のフッ素原子を含んでいてもよいアルキル基である。)で示される化合物を挙げることができる。
上記フッ素化アルキル基は、アルキル基が有する水素原子の少なくとも1つをフッ素原子で置換したものである。R7がフッ素原子を含むアルキル基である場合、フッ素化アルキル基となる。
Rf2及びR7は、低粘性である点で、炭素数が1~7であることが好ましく、1~2であることがより好ましい。
炭素数が大きくなりすぎると低温特性が低下したり、電解質塩の溶解性が低下したりするおそれがあり、炭素数が少な過ぎると、電解質塩の溶解性の低下、放電効率の低下、更には粘性の増大等がみられることがある。
Rd1-Rd2- (d-1)
(式中、Rd1はフッ素原子を有していてもよい炭素数1以上のアルキル基;Rd2はフッ素原子を有していてもよい炭素数1~3のアルキレン基;ただし、Rd1及びRd2の少なくとも一方はフッ素原子を有している)で示されるフッ素化アルキル基が、電解質塩の溶解性が良好な点から好ましく例示できる。
なお、Rd1及びRd2は、更に、炭素原子、水素原子及びフッ素原子以外の、その他の原子を有していてもよい。
-CH2-、-CHF-、-CF2-、-CHCl-、-CFCl-、-CCl2-
なお、本開示においてフッ素含有率は、上記フッ素化鎖状カーボネートの構造式に基づいて、
{(フッ素原子の個数×19)/フッ素化鎖状カーボネートの分子量}×100(%)
により算出した値である。
R31COOR32
(式中、R31及びR32は、互いに独立に、炭素数1~4のフッ素原子を含んでいてもよいアルキル基であり、R31及びR32の少なくとも一方はフッ素原子を含む。)で示されるフッ素化鎖状カルボン酸エステルが、他溶媒との相溶性や耐酸化性が良好な点から好ましい。
なかでもCF3CH2C(=O)OCH3、HCF2C(=O)OCH3、HCF2C(=O)OC2H5、CF3C(=O)OCH2C2F5、CF3C(=O)OCH2CF2CF2H、CF3C(=O)OCH2CF3、CF3C(=O)OCH(CF3)2、ペンタフルオロ酪酸エチル、ペンタフルオロプロピオン酸メチル、ペンタフルオロプロピオン酸エチル、ヘプタフルオロイソ酪酸メチル、トリフルオロ酪酸イソプロピル、トリフルオロ酢酸エチル、トリフルオロ酢酸tert-ブチル、トリフルオロ酢酸n-ブチル、テトラフルオロ-2-(メトキシ)プロピオン酸メチル、酢酸2,2-ジフルオロエチル、酢酸2,2,3,3-テトラフルオロプロピル、CH3C(=O)OCH2CF3、酢酸1H,1H-ヘプタフルオロブチル、4,4,4-トリフルオロ酪酸メチル、4,4,4-トリフルオロ酪酸エチル、3,3,3-トリフルオロプロピオン酸エチル、3,3,3-トリフルオロプロピオン酸3,3,3-トリフルオロプロピル、3-(トリフルオロメチル)酪酸エチル、2,3,3,3-テトラフルオロプロピオン酸メチル、2,2-ジフルオロ酢酸ブチル、2,2,3,3-テトラフルオロプロピオン酸メチル、2-(トリフルオロメチル)-3,3,3-トリフルオロプロピオン酸メチル、ヘプタフルオロ酪酸メチルが、他溶媒との相溶性及びレート特性が良好な点から好ましく、CF3CH2C(=O)OCH3、HCF2C(=O)OCH3、HCF2C(=O)OC2H5、CH3C(=O)OCH2CF3がより好ましく、HCF2C(=O)OCH3、HCF2C(=O)OC2H5、CH3C(=O)OCH2CF3が特に好ましい。
上記の組成の溶媒を含有する電解液は、電気化学デバイスの高温保存特性やサイクル特性を一層向上させることができる。
上記溶媒の含有量は、電解液中70~99.999質量%であることが好ましく、80質量%以上がより好ましく、92質量%以下がより好ましい。
X201は、O、S、炭素数1~10のアルキレン基、炭素数1~10のハロゲン化アルキレン基、炭素数6~20のアリーレン基又は炭素数6~20のハロゲン化アリーレン基(アルキレン基、ハロゲン化アルキレン基、アリーレン基、及び、ハロゲン化アリーレン基はその構造中に置換基、ヘテロ原子を持っていてもよく、またn202が1でn203が2~4のときにはn203個のX201はそれぞれが結合していてもよい)。
L201は、ハロゲン原子、シアノ基、炭素数1~10のアルキル基、炭素数1~10のハロゲン化アルキル基、炭素数6~20のアリール基、炭素数6~20のハロゲン化アリール基(アルキレン基、ハロゲン化アルキレン基、アリーレン基、及び、ハロゲン化アリーレン基はその構造中に置換基、ヘテロ原子を持っていてもよく、またn201が2~8のときにはn201個のL201はそれぞれが結合して環を形成してもよい)又は-Z203Y203。
Y201、Y202及びZ203は、それぞれ独立でO、S、NY204、炭化水素基又はフッ素化炭化水素基。Y203及びY204は、それぞれ独立でH、F、炭素数1~10のアルキル基、炭素数1~10のハロゲン化アルキル基、炭素数6~20のアリール基又は炭素数6~20のハロゲン化アリール基(アルキル基、ハロゲン化アルキル基、アリール基及びハロゲン化アリール基はその構造中に置換基、ヘテロ原子を持っていてもよく、Y203又はY204が複数個存在する場合にはそれぞれが結合して環を形成してもよい)。
なお、本明細書において、フッ素化炭化水素基は、炭化水素基の水素原子の少なくとも1つがフッ素原子に置換された基である。
化合物(5)としては、リチウムビス(オキサラト)ボレートが特に好ましい。
上記リチウム塩として任意のものを用いることができ、具体的には以下のものが挙げられる。例えば、LiPF6、LiBF4、LiClO4、LiAlF4、LiSbF6、LiTaF6、LiWF7、LiAsF6、LiAlCl4、LiI、LiBr、LiCl、LiB10Cl10、Li2SiF6、Li2PFO3、LiPO2F2等の無機リチウム塩;
LiWOF5等のタングステン酸リチウム類;
HCO2Li、CH3CO2Li、CH2FCO2Li、CHF2CO2Li、CF3CO2Li、CF3CH2CO2Li、CF3CF2CO2Li、CF3CF2CF2CO2Li、CF3CF2CF2CF2CO2Li等のカルボン酸リチウム塩類;
FSO3Li、CH3SO3Li、CH2FSO3Li、CHF2SO3Li、CF3SO3Li、CF3CF2SO3Li、CF3CF2CF2SO3Li、CF3CF2CF2CF2SO3Li、リチウムメチルサルフェート、リチウムエチルサルフェート(C2H5OSO3Li)、リチウム2,2,2-トリフルオロエチルサルフェート等のS=O基を有するリチウム塩類;
LiN(FCO)2、LiN(FCO)(FSO2)、LiN(FSO2)2、LiN(FSO2)(CF3SO2)、LiN(CF3SO2)2、LiN(C2F5SO2)2、リチウムビスパーフルオロエタンスルホニルイミド、リチウム環状1,2-パーフルオロエタンジスルホニルイミド、リチウム環状1,3-パーフルオロプロパンジスルホニルイミド、リチウム環状1,2-エタンジスルホニルイミド、リチウム環状1,3-プロパンジスルホニルイミド、リチウム環状1,4-パーフルオロブタンジスルホニルイミド、LiN(CF3SO2)(FSO2)、LiN(CF3SO2)(C3F7SO2)、LiN(CF3SO2)(C4F9SO2)、LiN(POF2)2等のリチウムイミド塩類;
LiC(FSO2)3、LiC(CF3SO2)3、LiC(C2F5SO2)3等のリチウムメチド塩類;
その他、式:LiPFa(CnF2n+1)6-a(式中、aは0~5の整数であり、nは1~6の整数である)で表される塩(例えばLiPF3(C2F5)3、LiPF3(CF3)3、LiPF3(iso-C3F7)3、LiPF5(iso-C3F7)、LiPF4(CF3)2、LiPF4(C2F5)2)、LiPF4(CF3SO2)2、LiPF4(C2F5SO2)2、LiBF3CF3、LiBF3C2F5、LiBF3C3F7、LiBF2(CF3)2、LiBF2(C2F5)2、LiBF2(CF3SO2)2、LiBF2(C2F5SO2)2等の含フッ素有機リチウム塩類、LiSCN、LiB(CN)4、LiB(C6H5)4、Li2(C2O4)、LiP(C2O4)3、Li2B12FbH12-b(bは0~3の整数)等が挙げられる。
Y21及びZ21が複数存在する場合、複数存在するY21及びZ21は同じであっても異なっていてもよい。
Z21としては、H-、F-、CH3-、CH3CH2-、CH3CH2CH2-、CF3-、CF3CF2-、CH2FCH2-及びCF3CF2CF2-からなる群より選択される少なくとも1種が好ましい。
これにより、電気化学デバイスの高温保存特性を向上させることができる。上記ニトリル化合物を単独で用いてもよく、2種以上を任意の組み合わせ及び比率で併用してもよい。
ハロゲン原子としては、例えば、フッ素原子、塩素原子、臭素原子、ヨウ素原子が挙げられる。中でもフッ素原子が好ましい。
アルキル基としては、炭素数1~5のものが好ましい。アルキル基の具体例としては、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert-ブチル基等が挙げられる。
アルキル基の少なくとも一部の水素原子をハロゲン原子で置換した基としては、上述したアルキル基の少なくとも一部の水素原子を上述したハロゲン原子で置換した基が挙げられる。
Ra及びRbがアルキル基、又は、アルキル基の少なくとも一部の水素原子をハロゲン原子で置換した基である場合は、RaとRbとが互いに結合して環構造(例えば、シクロヘキサン環)を形成していてもよい。
Ra及びRbは、水素原子又はアルキル基であることが好ましい。
ジニトリルの具体例としては、マロノニトリル、スクシノニトリル、グルタロニトリル、アジポニトリル、ピメロニトリル、スベロニトリル、アゼラニトリル、セバコニトリル、ウンデカンジニトリル、ドデカンジニトリル、メチルマロノニトリル、エチルマロノニトリル、イソプロピルマロノニトリル、tert-ブチルマロノニトリル、メチルスクシノニトリル、2,2-ジメチルスクシノニトリル、2,3-ジメチルスクシノニトリル、2,3,3-トリメチルスクシノニトリル、2,2,3,3-テトラメチルスクシノニトリル、2,3-ジエチル-2,3-ジメチルスクシノニトリル、2,2-ジエチル-3,3-ジメチルスクシノニトリル、ビシクロヘキシル-1,1-ジカルボニトリル、ビシクロヘキシル-2,2-ジカルボニトリル、ビシクロヘキシル-3,3-ジカルボニトリル、2,5-ジメチル-2,5-ヘキサンジカルボニトリル、2,3-ジイソブチル-2,3-ジメチルスクシノニトリル、2,2-ジイソブチル-3,3-ジメチルスクシノニトリル、2-メチルグルタロニトリル、2,3-ジメチルグルタロニトリル、2,4-ジメチルグルタロニトリル、2,2,3,3-テトラメチルグルタロニトリル、2,2,4,4-テトラメチルグルタロニトリル、2,2,3,4-テトラメチルグルタロニトリル、2,3,3,4-テトラメチルグルタロニトリル、1,4-ジシアノペンタン、2,6-ジシアノヘプタン、2,7-ジシアノオクタン、2,8-ジシアノノナン、1,6-ジシアノデカン、1,2-ジジアノベンゼン、1,3-ジシアノベンゼン、1,4-ジシアノベンゼン、3,3’-(エチレンジオキシ)ジプロピオニトリル、3,3’-(エチレンジチオ)ジプロピオニトリル、3,9-ビス(2-シアノエチル)-2,4,8,10-テトラオキサスピロ[5,5]ウンデカン、ブタンニトリル、フタロニトリル等を例示できる。これらのうち、特に好ましいのはスクシノニトリル、グルタロニトリル、アジポニトリルである。
また、トリカルボニトリルの具体例としては、ペンタントリカルボニトリル、プロパントリカルボニトリル、1,3,5-ヘキサントリカルボニトリル、1,3,6-ヘキサントリカルボニトリル、ヘプタントリカルボニトリル、1,2,3-プロパントリカルボニトリル、1,3,5-ペンタントリカルボニトリル、シクロヘキサントリカルボニトリル、トリスシアノエチルアミン、トリスシアノエトキシプロパン、トリシアノエチレン、トリス(2-シアノエチル)アミン等が挙げられ特に好ましいものは、1,3,6-ヘキサントリカルボニトリル、シクロヘキサントリカルボニトリルであり、最も好ましいものはシクロヘキサントリカルボニトリルである。
ハロゲン原子、アルキル基、及び、アルキル基の少なくとも一部の水素原子をハロゲン原子で置換した基については、上記一般式(1a)について例示したものが挙げられる。
上記NC-Rc1-Xc1-におけるRc1はアルキレン基である。アルキレン基としては、炭素数1~3のアルキレン基が好ましい。
Rc、Rd及びReは、それぞれ独立して、水素原子、ハロゲン原子、アルキル基、又は、アルキル基の少なくとも一部の水素原子をハロゲン原子で置換した基であることが好ましい。
Rc、Rd及びReの少なくとも1つは、ハロゲン原子、又は、アルキル基の少なくとも一部の水素原子をハロゲン原子で置換した基であることが好ましく、フッ素原子、又は、アルキル基の少なくとも一部の水素原子をフッ素原子で置換した基であることがより好ましい。
Rd及びReがアルキル基、又は、アルキル基の少なくとも一部の水素原子をハロゲン原子で置換した基である場合は、RdとReとが互いに結合して環構造(例えば、シクロヘキサン環)を形成していてもよい。
ハロゲン原子、アルキル基、及び、アルキル基の少なくとも一部の水素原子をハロゲン原子で置換した基については、上記一般式(1a)について例示したものが挙げられる。
シアノ基を含む基としては、シアノ基のほか、アルキル基の少なくとも一部の水素原子をシアノ基で置換した基が挙げられる。この場合のアルキル基としては、上記一般式(1a)について例示したものが挙げられる。
Rf、Rg、Rh及びRiのうち少なくとも1つはシアノ基を含む基である。好ましくは、Rf、Rg、Rh及びRiのうち少なくとも2つがシアノ基を含む基であることであり、より好ましくは、Rh及びRiがシアノ基を含む基であることである。Rh及びRiがシアノ基を含む基である場合、Rf及びRgは、水素原子であることが好ましい。
このような化合物を含有することにより、電極界面の安定性が向上し、電気化学デバイスの特性を向上させることができる。
上記ポリエチレンオキシドとしては、例えば、ポリエチレンオキシドモノオール、ポリエチレンオキシドカルボン酸、ポリエチレンオキシドジオール、ポリエチレンオキシドジカルボン酸、ポリエチレンオキシドトリオール、ポリエチレンオキシドトリカルボン酸等が挙げられる。これらは単独で使用してもよいし、2種以上を併用してもよい。
なかでも、電気化学デバイスの特性がより良好となる点で、ポリエチレンオキシドモノオールとポリエチレンオキシドジオールの混合物、及び、ポリエチレンカルボン酸とポリエチレンジカルボン酸の混合物であることが好ましい。
上記重量平均分子量は、ゲルパーミエーションクロマトグラフィー(GPC)法によるポリスチレン換算により測定することができる。
上記ポリエチレンオキシドの含有量は、5×10-6mol/kg以上であることがより好ましい。
フッ素化不飽和環状カーボネートは、不飽和結合とフッ素原子とを有する環状カーボネートである。フッ素化不飽和環状カーボネートが有するフッ素原子の数は1以上があれば、特に制限されない。中でもフッ素原子が通常6以下、好ましくは4以下であり、1個又は2個のものが最も好ましい。
三重結合を有する化合物の具体例としては、例えば、以下の化合物が挙げられる。
1-ペンチン、2-ペンチン、1-ヘキシン、2-ヘキシン、3-ヘキシン、1-ヘプチン、2-ヘプチン、3-ヘプチン、1-オクチン、2-オクチン、3-オクチン、4-オクチン、1-ノニン、2-ノニン、3-ノニン、4-ノニン、1-ドデシン、2-ドデシン、3-ドデシン、4-ドデシン、5-ドデシン、フェニルアセチレン、1-フェニル-1-プロピン、1-フェニル-2-プロピン、1-フェニル-1-ブチン、4-フェニル-1-ブチン、4-フェニル-1-ブチン、1-フェニル-1-ペンチン、5-フェニル-1-ペンチン、1-フェニル-1-ヘキシン、6-フェニル-1-ヘキシン、ジフェニルアセチレン、4-エチニルトルエン、ジシクロヘキシルアセチレン等の炭化水素化合物;
フルオロベンゼン、ジフルオロベンゼン、ヘキサフルオロベンゼン、ベンゾトリフルオライド、モノフルオロベンゼン、1-フルオロ-2-シクロヘキシルベンゼン、1-フルオロ-4-tert-ブチルベンゼン、1-フルオロ-3-シクロヘキシルベンゼン、1-フルオロ-2-シクロヘキシルベンゼン、フッ素化ビフェニル等の含フッ素芳香族化合物;
エリスリタンカーボネート、スピロ-ビス-ジメチレンカーボネート、メトキシエチル-メチルカーボネート等のカーボネート化合物;
ジオキソラン、ジオキサン、2,5,8,11-テトラオキサドデカン、2,5,8,11,14-ペンタオキサペンタデカン、エトキシメトキシエタン、トリメトキシメタン、グライム、エチルモノグライム等のエーテル系化合物;
ジメチルケトン、ジエチルケトン、3-ペンタノン等のケトン系化合物;
2-アリル無水コハク酸等の酸無水物;
シュウ酸ジメチル、シュウ酸ジエチル、シュウ酸エチルメチル、シュウ酸ジ(2-プロピニル)、シュウ酸メチル2-プロピニル、コハク酸ジメチル、グルタル酸ジ(2-プロピニル)、ギ酸メチル、ギ酸エチル、ギ酸2-プロピニル、2-ブチン-1,4-ジイルジホルメート、メタクリル酸2-プロピニル、マロン酸ジメチル等のエステル化合物;
アセトアミド、N-メチルホルムアミド、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド等のアミド系化合物;
硫酸エチレン、硫酸ビニレン、亜硫酸エチレン、フルオロスルホン酸メチル、フルオロスルホン酸エチル、メタンスルホン酸メチル、メタンスルホン酸エチル、ブスルファン、スルホレン、ジフェニルスルホン、N,N-ジメチルメタンスルホンアミド、N,N-ジエチルメタンスルホンアミド、ビニルスルホン酸メチル、ビニルスルホン酸エチル、ビニルスルホン酸アリル、ビニルスルホン酸プロパルギル、アリルスルホン酸メチル、アリルスルホン酸エチル、アリルスルホン酸アリル、アリルスルホン酸プロパルギル、1,2-ビス(ビニルスルホニロキシ)エタン、無水プロパンジスルホン酸、無水スルホ酪酸、無水スルホ安息香酸、無水スルホプロピオン酸、無水エタンジスルホン酸、メチレンメタンジスルホネート、メタンスルホン酸2-プロピニル、ペンテンサルファイト、ペンタフルオロフェニルメタンスルホネート、プロピレンサルフェート、プロピレンサルファイト、プロパンサルトン、ブチレンサルファイト、ブタン-2,3-ジイルジメタンスルホネート、2-ブチン-1,4-ジイルジメタンスルホネート、ビニルスルホン酸2-プロピニル、ビス(2-ビニルスルホニルエチル)エーテル、5-ビニル-ヘキサヒドロ-1,3,2-ベンゾジオキサチオール-2-オキシド、2-(メタンスルホニルオキシ)プロピオン酸2-プロピニル、5,5-ジメチル-1,2-オキサチオラン-4-オン2,2-ジオキシド、3-スルホ-プロピオン酸無水物トリメチレンメタンジスルホネート2-メチルテトラヒドロフラン、トリメチレンメタンジスルホネート、テトラメチレンスルホキシド、ジメチレンメタンジスルホネート、ジフルオロエチルメチルスルホン、ジビニルスルホン、1,2-ビス(ビニルスルホニル)エタン、エチレンビススルホン酸メチル、エチレンビススルホン酸エチル、エチレンサルフェート、チオフェン1-オキシド等の含硫黄化合物;
1-メチル-2-ピロリジノン、1-メチル-2-ピペリドン、3-メチル-2-オキサゾリジノン、1,3-ジメチル-2-イミダゾリジノン及びN-メチルスクシンイミド、ニトロメタン、ニトロエタン、エチレンジアミン等の含窒素化合物;
亜リン酸トリメチル、亜リン酸トリエチル、亜リン酸トリフェニル、リン酸トリメチル、リン酸トリエチル、リン酸トリフェニル、メチルホスホン酸ジメチル、エチルホスホン酸ジエチル、ビニルホスホン酸ジメチル、ビニルホスホン酸ジエチル、ジエチルホスホノ酢酸エチル、ジメチルホスフィン酸メチル、ジエチルホスフィン酸エチル、トリメチルホスフィンオキシド、トリエチルホスフィンオキシド、リン酸ビス(2,2-ジフルオロエチル)2,2,2-トリフルオロエチル、リン酸ビス(2,2,3,3-テトラフルオロプロピル)2,2,2-トリフルオロエチル、リン酸ビス(2,2,2-トリフルオロエチル)メチル、リン酸ビス(2,2,2-トリフルオロエチル)エチル、リン酸ビス(2,2,2-トリフルオロエチル)2,2-ジフルオロエチルリン酸ビス(2,2,2-トリフルオロエチル)2,2,3,3-テトラフルオロプロピル、リン酸トリブチル、リン酸トリス(2,2,2-トリフルオロエチル)、リン酸トリス(1,1,1,3,3,3-ヘキサフルオロプロパン-2-イル)、リン酸トリオクチル、リン酸2-フェニルフェニルジメチル、リン酸2-フェニルフェニルジエチル、リン酸(2,2,2-トリフルオロエチル)(2,2,3,3-テトラフルオロプロピル)メチル、メチル2-(ジメトキシホスホリル)アセテート、メチル2-(ジメチルホスホリル)アセテート、メチル2-(ジエトキシホスホリル)アセテート、メチル2-(ジエチルホスホリル)アセテート、メチレンビスホスホン酸メチル、メチレンビスホスホン酸エチル、エチレンビスホスホン酸メチル、エチレンビスホスホン酸エチル、ブチレンビスホスホン酸メチル、ブチレンビスホスホン酸エチル、酢酸2-プロピニル2-(ジメトキシホスホリル)、酢酸2-プロピニル2-(ジメチルホスホリル)、酢酸2-プロピニル2-(ジエトキシホスホリル)、酢酸2-プロピニル2-(ジエチルホスホリル)、リン酸トリス(トリメチルシリル)、リン酸トリス(トリエチルシリル)、リン酸トリス(トリメトキシシリル)、亜リン酸トリス(トリメチルシリル)、亜リン酸トリス(トリエチルシリル)、亜リン酸トリス(トリメトキシシリル)、ポリリン酸トリメチルシリル等の含燐化合物;
ホウ酸トリス(トリメチルシリル)、ホウ酸トリス(トリメトキシシリル)等の含ホウ素化合物;
ジメトキシアルミノキシトリメトキシシラン、ジエトキシアルミノキシトリエトキシシラン、ジプロポキシアルミノキシトリエトキシシラン、ジブトキシアルミノキシトリメトキシシラン、ジブトキシアルミノキシトリエトキシシラン、チタンテトラキス(トリメチルシロキシド)、チタンテトラキス(トリエチルシロキシド)、テトラメチルシラン等のシラン化合物;
等が挙げられる。これらは1種を単独で用いても、2種以上を併用してもよい。これらの助剤を添加することにより、高温保存後の容量維持特性やサイクル特性を向上させることができる。
上記その他の助剤としては、なかでも、含燐化合物が好ましく、リン酸トリス(トリメチルシリル)、亜リン酸(トリストリメチルシリル)が好ましい。
で示される含フッ素ラクトンが挙げられる。
で示される含フッ素ラクトン等も挙げられる。
で示される5員環構造が、合成が容易である点、化学的安定性が良好な点から好ましく挙げられ、更には、AとBの組合せにより、下記式(F):
で示される含フッ素ラクトンと、下記式(G):
で示される含フッ素ラクトンがある。
フッ素化環状カルボン酸エステルを含有させることにより、イオン伝導度の向上、安全性の向上、高温時の安定性向上といった効果が得られる。
炭素数2~10の鎖状エーテルとしては、ジメチルエーテル、ジエチルエーテル、ジ-n-ブチルエーテル、ジメトキシメタン、メトキシエトキシメタン、ジエトキシメタン、ジメトキシエタン、メトキシエトキシエタン、ジエトキシエタン、エチレングリコールジ-n-プロピルエーテル、エチレングリコールジ-n-ブチルエーテル、ジエチレングリコール、ジエチレングリコールジメチルエーテル、ペンタエチレングリコール、トリエチレングリコールジメチルエーテル、トリエチレングリコール、テトラエチレングリコール、テトラエチレングリコールジメチルエーテル、ジイソプロピルエーテル等が挙げられる。
上記フッ素化エーテルとしては、下記一般式(I):
Rf3-O-Rf4 (I)
(式中、Rf3及びRf4は同じか又は異なり、炭素数1~10のアルキル基又は炭素数1~10のフッ素化アルキル基である。ただし、Rf3及びRf4の少なくとも一方は、フッ素化アルキル基である。)
で表されるフッ素化エーテル(I)が挙げられる。フッ素化エーテル(I)を含有させることにより、電解液の難燃性が向上するとともに、高温高電圧での安定性、安全性が向上する。
なかでも、Rf3及びRf4が、同じか又は異なり、Rf3が炭素数3~6のフッ素化アルキル基であり、かつ、Rf4が炭素数2~6のフッ素化アルキル基であることがより好ましい。
上記フッ素含有率の下限は、45質量%がより好ましく、50質量%が更に好ましく、55質量%が特に好ましい。上限は70質量%がより好ましく、66質量%が更に好ましい。
なお、フッ素化エーテル(I)のフッ素含有率は、フッ素化エーテル(I)の構造式に基づいて、{(フッ素原子の個数×19)/フッ素化エーテル(I)の分子量}×100(%)により算出した値である。
なかでも、高沸点、他の溶媒との相溶性や電解質塩の溶解性が良好な点で有利なことから、HCF2CF2OCH2CF2CF2H、HCF2CF2CH2OCF2CFHCF3(沸点106℃)、CF3CF2CH2OCF2CFHCF3(沸点82℃)、HCF2CF2CH2OCF2CF2H(沸点92℃)及びCF3CF2CH2OCF2CF2H(沸点68℃)からなる群より選択される少なくとも1種であることが好ましく、HCF2CF2OCH2CF2CF2H、HCF2CF2CH2OCF2CFHCF3(沸点106℃)及びHCF2CF2CH2OCF2CF2H(沸点92℃)からなる群より選択される少なくとも1種であることがより好ましく、HCF2CF2OCH2CF2CF2Hが更に好ましい。
Rf5COO-M+ (30)
(式中、Rf5は炭素数3~10のエーテル結合を含んでいてもよい含フッ素アルキル基;M+はLi+、Na+、K+又はNHR’3 +(R’は同じか又は異なり、いずれもH又は炭素数が1~3のアルキル基)である)
で表される含フッ素カルボン酸塩や、下記式(40):
Rf6SO3 -M+ (40)
(式中、Rf6は炭素数3~10のエーテル結合を含んでいてもよい含フッ素アルキル基;M+はLi+、Na+、K+又はNHR’3 +(R’は同じか又は異なり、いずれもH又は炭素数が1~3のアルキル基)である)
で表される含フッ素スルホン酸塩等が好ましい。
A-(D)-B (101)
[式中、Dは式(201):
-(D1)n-(FAE)m-(AE)p-(Y)q- (201)
(式中、D1は、式(2a):
で示される側鎖に含フッ素エーテル基を有するエーテル単位;
FAEは、式(2b):
で示される側鎖にフッ素化アルキル基を有するエーテル単位;
AEは、式(2c):
で示されるエーテル単位;
Yは、式(2d-1)~(2d-3):
nは0~200の整数;mは0~200の整数;pは0~10000の整数;qは1~100の整数;ただしn+mは0ではなく、D1、FAE、AE及びYの結合順序は特定されない);
A及びBは同じか又は異なり、水素原子、フッ素原子及び/又は架橋性官能基を含んでいてもよいアルキル基、フッ素原子及び/又は架橋性官能基を含んでいてもよいフェニル基、-COOH基、-OR(Rは水素原子又はフッ素原子及び/又は架橋性官能基を含んでいてもよいアルキル基)、エステル基又はカーボネート基(ただし、Dの末端が酸素原子の場合は-COOH基、-OR、エステル基及びカーボネート基ではない)]
で表される側鎖に含フッ素基を有する非晶性含フッ素ポリエーテル化合物である。
なお、添加剤として化合物(7)を使用する場合、上述した電解質塩としては、化合物(7)以外の化合物を使用することが好ましい。
上記S=O基を有するリチウム塩類としては、モノフルオロスルホン酸リチウム(FSO3Li)、メチル硫酸リチウム(CH3OSO3Li)、エチル硫酸リチウム(C2H5OSO3Li)、2,2,2-トリフルオロエチル硫酸リチウム等が挙げられる。
化合物(7)としては、中でも、LiPO2F2、FSO3Li、C2H5OSO3Liが好ましい。
HFの含有量は、5ppm以上がより好ましく、10ppm以上が更に好ましく、20ppm以上が特に好ましい。HFの含有量はまた、200ppm以下がより好ましく、100ppm以下が更に好ましく、80ppm以下が更により好ましく、50ppm以下が特に好ましい。
HFの含有量は、中和滴定法により測定することができる。
セパレータの材質や形状は、特に限定されず、公知のものを使用することができる。なかでも、樹脂、ガラス繊維、無機物等が用いられ、保液性に優れた多孔性シート又は不織布状の形態の物等を用いるのが好ましい。
電極群は、上記の正極板と負極板とを上記のセパレータを介してなる積層構造のもの、及び上記の正極板と負極板とを上記のセパレータを介して渦巻き状に捲回した構造のもののいずれでもよい。電極群の体積が電池内容積に占める割合(以下、電極群占有率と称する)は、通常40%以上であり、50%以上が好ましく、また、通常90%以下であり、80%以下が好ましい。
本開示の電気化学デバイスを4.9V以上(好ましくは5.0V以上)の電圧下で使用する方法も本開示の一つである。上限は、5.5Vが好ましく、5.4Vがより好ましい。
下記の条件でフッ化カーボンのX線光電子分光法(XPS)分析を実施し、表面フッ素指数Iを算出した。
図1は、実験1で使用するフッ化カーボンの分析結果である。図1にあるように、アルゴンイオンによるスパッタリング(エッチング)に伴い、C1sにおける291eVのピーク強度(CF2に相当するピークのピークトップ)が減少していることから、表面のフッ素濃度が高いことがわかる。
・条件
アルバック・ファイ社製VersaProbeII
アルゴンガスクラスターイオンビーム
スパッタ条件0.5kV、10mA
X線ビーム径100μm
測定範囲1000μm×300μm
光電子の取り出し角度45度
自動比表面積計(BELSORP-mini、日本ベル株式会社製)を用いて、フッ化カーボンの比表面積を測定した。具体的には、液体窒素温度下における窒素ガス吸着法にて、吸着等温線を測定した後、BET法にて解析し、比表面積を求めた。
なお、試料の前処理として、Belprep vac-II(日本ベル株式会社製)を用いて100℃にて10時間真空脱気を行った。
(電解液の調製)
高誘電率溶媒であるプロピレンカーボネートおよび低粘度溶媒であるエチルメチルカーボネートを体積比1対1で混合し、これにLiBF4を1.0モル/リットルの濃度で添加して、非水電解液を得た。
正極活物質としてのCF0.45(I:0.21、比表面積:111m2/g)を80質量%と、導電材としてのアセチレンブラック10質量%と、結着剤としてのポリフッ化ビニリデン(PVdF)10質量%とを、N-メチルピロリドン溶媒中で混合して、スラリー化した。アルミ集電体上に、得られた正極合剤スラリーを均一に塗布し、乾燥して正極活物質層(厚さ50μm)を形成し、その後、ローラープレス機により圧縮成形して、正極積層体を製造した。正極積層体を打ち抜き機で直径1.3mmの大きさに打ち抜き、円状の正極を作製した。
別途、厚さ0.1mmのリチウム金属箔を打ち抜き機で直径1.6mmの大きさに打ち抜き、円状の負極を作製した。
上記の円状の正極及び負極を厚さ20μmの微孔性ポリエチレンフィルム(セパレータ)を介して対向させ、上記で得られた電解液を注入し、電解液がセパレータなどに充分に浸透した後、封止し予備充電、エージングを行い、コイン型の二次電池を作製した。
得られたコイン型の二次電池について、電流密度50mA/gで充放電した際の10サイクル後の放電容量を測定した。作動電圧は、上限電圧(充電電圧)を5.0V(実施例1)又は4.8V(比較例1)、下限電圧を1.5Vとした。結果を表1に示す。
正極に対し、充放電前、最初の放電後、5.0Vへの再充電後、5.3Vへの再充電後、X線光電子分光法(XPS)による分析を行った。条件はフッ化カーボンに対して実施した際と同じである。結果を図2に示す。
図2にあるように、(c)の5.0Vへの再充電後、(d)の5.3Vへの再充電後には、C1sの295~290eV付近にC-F結合のピークが検出されている。よって、再充電時にフッ化物イオンのカーボンへのインサーション反応が生じていること、すなわち、CFxの形成が可逆的に起こることが分かる。
正極に対し、最初の放電後、5.0Vへの再充電後、再放電後、電子顕微鏡による画像観察を行った。結果を図3に示す。
図3にあるように、(a)の放電後にフッ化リチウムが生成していること、(b)の5.0Vへの再充電後にフッ化リチウムが消失すること、(c)の再放電後にフッ化リチウムが再度生成していることが確認できた。
画像観察で使用した試料と、充放電前の正極とについて、下記の条件でX線回折法(XRD)による分析を行った。結果を図4に示す。
図4においても、図3と同様、(a)の放電後にフッ化リチウムが生成していること、(b)の5.0Vへの再充電後にフッ化リチウムが消失すること、(c)の再放電後にフッ化リチウムが再度生成していることが確認できた。
・条件
XRD装置:リガク製SmartLab(登録商標)
X線種:Cu-Kα線
Kβ線除去方法:Niフィルター
X線出力:40kV、40mA
測定範囲:5.0~100.0deg.
スキャンスピード:1.0deg./min.
(電解液の調製)
表2に記載の組成で溶媒を混合し、リチウム塩を1.2モル/リットルの濃度で添加して、非水電解液を得た。
・溶媒
PC:プロピレンカーボネート
EC:エチレンカーボネート
FEC:モノフルオロエチレンカーボネート
DMC:ジメチルカーボネート
DEC:ジエチルカーボネート
DME:1,2-ジメトキシエタン
F1:CF3CH2OCOOCH3
F2:CF3CH2COOCH3
F3:CF2HCOOCH3
F4:HCF2CF2OCH2CF2CF2H
・添加剤
B1:トリス(ペンタフルオロフェニル)ボラート
・リチウム塩
L1:LiBF4
L2:LiPF6
L3:LiFSI
L4:LiTFSI
CF0.5(I:0.13、比表面積:263m2/g)とカーボンブラックとポリフッ化ビニリデンを85/10/5(質量比)で混合し、N-メチル-2-ピロリドンに分散してスラリー状とした正極合剤スラリーを準備した。アルミ集電体上に、得られた正極合剤スラリーを均一に塗布し、乾燥して正極活物質層(厚さ50μm)を形成し、その後、ローラープレス機により圧縮成形して、正極積層体を製造した。正極積層体を打ち抜き機で直径1.3mmの大きさに打ち抜き、円状の正極を作製した。
別途、各種材料をコーティングした厚さ0.1mmのリチウム金属箔を打ち抜き機で直径1.6mmの大きさに打ち抜き、円状の負極を作製した。
上記の円状の正極及び負極を厚さ20μmの微孔性ポリエチレンフィルム(セパレータ)を介して対向させ、上記で得られた電解液を注入し、電解液がセパレータなどに充分に浸透した後、封止し予備充電、エージングを行い、コイン型の二次電池を作製した。
得られたコイン型の二次電池について、次の要領で容量維持率を調べた。結果を表2に示す。
・充放電条件
充電:100mA/gの充電電流で5.05Vになるまで充電を行った。
放電:100mA/gの放電電流で1.8Vになるまで放電を行った。
試験温度:25℃
・算出式
容量維持率(%)=100サイクル後の放電容量(mAh)/3サイクル後の放電容量(mAh)×100
初期放電容量の評価が終了した二次電池を、25℃にて、100mA/gの電流で初期放電容量の半分の容量となるよう充電した。これを25℃において、200mA/gで放電させ、その10秒時の電圧を測定した。放電時の電圧の降下から抵抗を算出し、IV抵抗とした。結果を表2に示す。
(電解液の調製)
高誘電率溶媒であるモノフルオロエチレンカーボネートおよび低粘度溶媒であるエチルメチルーボネートと、F4:(HCF2CF2OCH2CF2CF2H)とを、体積比3対4対3になるように混合し、これにLiFSIを1.0モル/リットルの濃度となるように添加して、非水電解液を得た。
正極活物質としてのCF0.8(I:0.09、比表面積:370m2/g)を80質量%と、導電材としてのアセチレンブラック10質量%と、結着剤としてのポリフッ化ビニリデン(PVdF)10質量%とを、N-メチルピロリドン溶媒中で混合して、スラリー化した。アルミ集電体上に、得られた正極合剤スラリーを均一に塗布し、乾燥して正極活物質層(厚さ50μm)を形成し、その後、ローラープレス機により圧縮成形して、正極積層体を製造した。正極積層体を打ち抜き機で直径1.3mmの大きさに打ち抜き、円状の正極を作製した。
Anode1、2、4の活物質については、活物質とグラファイトを10対90の重量比で、蒸留水で分散させたスチレン-ブタジエンゴムを固形分で6質量%となるように加え、ディスパーザーで混合してスラリー状としたものを負極集電体(厚さ10μmの銅箔)上に均一に塗布し、乾燥し、負極合剤層を形成した。その後、ローラープレス機により圧縮成形し、打ち抜き機で直径1.6mmの大きさに打ち抜き、円状の負極を作製した。Anode3については実験1と同様に準備をした。
上記の円状の正極及び負極を厚さ20μmの微孔性ポリエチレンフィルム(セパレータ)を介して対向させ、上記で得られた電解液を注入し、電解液がセパレータなどに充分に浸透した後、封止し予備充電、エージングを行い、コイン型の二次電池を作製した。
・負極活物質
Anode1:SiOx
Anode2:Sn
Anode3:Li
Anode4:Li4/3Ti5/3O4
Anode5:Si
得られたコイン型の二次電池について、次の要領で容量維持率を調べた。結果を表3に示す。
・充放電条件
充電:100mA/gの充電電流で5.05Vになるまで充電を行った。
放電:100mA/gの放電電流で1.8Vになるまで放電を行った。
試験温度:5℃
・算出式
容量維持率(%)=20サイクル後の放電容量(mAh)/3サイクル後の放電容量(mAh)×100
(セルの作製)
固体電解質であるLi2S-SiS2を、実験1と同様の条件で作製した正極及び負極で挟み、セルを構築した。
得られたコイン型の二次電池について、次の要領で容量維持率を調べた。結果を表4に示す。
・充放電条件
充電:10mA/gの充電電流で5.0Vになるまで充電を行った。
放電:10mA/gの放電電流で2.0Vになるまで放電を行った。
試験温度:45℃
・算出式
容量維持率(%)=5サイクル後の放電容量(mAh)/2サイクル後の放電容量(mAh)×100
実験1、実施例1の電池を用いて同様の試験条件で5サイクル目の容量維持率を算出した。
・算出式
容量維持率(%)=5サイクル後の放電容量(mAh)/2サイクル後の放電容量(mAh)×100(実施例19)
Claims (14)
- 炭素材料を含み、
放電時、金属フッ化物が形成され、
充電時、前記金属フッ化物から脱離したフッ化物イオンが前記炭素材料と反応し、C-F結合が形成され、
X線光電子分光法分析において、10mA、0.5kVのアルゴンイオンエッチングのもと、C1sにおけるCF 2 に相当するピークのピーク強度を測定したとき、(100秒後のピーク強度)/(0秒時のピーク強度)の値である表面フッ素指数Iが0.30以下である電極活物質。 - 放電後、炭素材料及び金属フッ化物を含み、
充電後、C-F結合を含み、
X線光電子分光法分析において、10mA、0.5kVのアルゴンイオンエッチングのもと、C1sにおけるCF 2 に相当するピークのピーク強度を測定したとき、(100秒後のピーク強度)/(0秒時のピーク強度)の値である表面フッ素指数Iが0.30以下である電極活物質。 - 充電後にフッ化カーボンが存在する請求項1又は2記載の電極活物質。
- 請求項1又は2記載の電極活物質を含む電極。
- 正極である請求項4記載の電極。
- 請求項4記載の電極を含む電気化学デバイス。
- 請求項4記載の電極の対極として、充放電時にフッ化物イオンとの結合が形成されない電極を含む請求項6記載の電気化学デバイス。
- 含フッ素化合物を含む電解液を含む請求項6記載の電気化学デバイス。
- 請求項4記載の電極を正極とする請求項6記載の電気化学デバイス。
- リチウムを貯蔵可能な材料を負極とする請求項6記載の電気化学デバイス。
- 前記リチウムを貯蔵可能な材料は、黒鉛、スズ、ケイ素、酸化ケイ素及びリチウムから選択される少なくとも一種である請求項10記載の電気化学デバイス。
- 4.9V以上の電圧下で使用される、請求項6記載の電気化学デバイス。
- 請求項6記載の電気化学デバイスを備えるモジュール。
- 請求項6記載の電気化学デバイスを4.9V以上の電圧下で使用する方法。
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