JP7412620B2 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置 Download PDF

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JP7412620B2
JP7412620B2 JP2023030736A JP2023030736A JP7412620B2 JP 7412620 B2 JP7412620 B2 JP 7412620B2 JP 2023030736 A JP2023030736 A JP 2023030736A JP 2023030736 A JP2023030736 A JP 2023030736A JP 7412620 B2 JP7412620 B2 JP 7412620B2
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voltage
high frequency
plasma processing
processing apparatus
chamber
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JP2023067921A (ja
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幸一 永海
辰郎 大下
一也 永関
慎司 檜森
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2023218154A priority patent/JP7719162B2/ja
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Priority to JP2025122058A priority patent/JP7799128B2/ja
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  • Drying Of Semiconductors (AREA)
JP2023030736A 2022-04-18 2023-03-01 プラズマ処理方法及びプラズマ処理装置 Active JP7412620B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023030736A JP7412620B2 (ja) 2022-04-18 2023-03-01 プラズマ処理方法及びプラズマ処理装置
JP2023218154A JP7719162B2 (ja) 2022-04-18 2023-12-25 プラズマ処理装置
JP2025122058A JP7799128B2 (ja) 2022-04-18 2025-07-22 プラズマ処理方法及びプラズマ処理装置

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JP2022068191A JP7238191B2 (ja) 2018-04-27 2022-04-18 プラズマ処理方法及びプラズマ処理装置
JP2023030736A JP7412620B2 (ja) 2022-04-18 2023-03-01 プラズマ処理方法及びプラズマ処理装置

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JP2022068191A Division JP7238191B2 (ja) 2018-04-27 2022-04-18 プラズマ処理方法及びプラズマ処理装置

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JP2023218154A Division JP7719162B2 (ja) 2022-04-18 2023-12-25 プラズマ処理装置

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JP7412620B2 true JP7412620B2 (ja) 2024-01-12

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JP2023218154A Active JP7719162B2 (ja) 2022-04-18 2023-12-25 プラズマ処理装置
JP2025122058A Active JP7799128B2 (ja) 2022-04-18 2025-07-22 プラズマ処理方法及びプラズマ処理装置

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000328248A (ja) 1999-05-12 2000-11-28 Nissin Electric Co Ltd 薄膜形成装置のクリーニング方法及び薄膜形成装置
JP2004193564A (ja) 2002-11-29 2004-07-08 Hitachi High-Technologies Corp サグ補償機能付き高周波電源を有するプラズマ処理装置およびプラズマ処理方法
JP2008243568A (ja) 2007-03-27 2008-10-09 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法
JP2012204644A (ja) 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
JP5542509B2 (ja) * 2010-04-05 2014-07-09 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
JP6670697B2 (ja) * 2016-04-28 2020-03-25 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000328248A (ja) 1999-05-12 2000-11-28 Nissin Electric Co Ltd 薄膜形成装置のクリーニング方法及び薄膜形成装置
JP2004193564A (ja) 2002-11-29 2004-07-08 Hitachi High-Technologies Corp サグ補償機能付き高周波電源を有するプラズマ処理装置およびプラズマ処理方法
JP2008243568A (ja) 2007-03-27 2008-10-09 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法
JP2012204644A (ja) 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

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JP2023067921A (ja) 2023-05-16
JP2024038094A (ja) 2024-03-19
JP7799128B2 (ja) 2026-01-14
JP2025157468A (ja) 2025-10-15
JP7719162B2 (ja) 2025-08-05

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