JP7381910B2 - light emitting device - Google Patents

Description

Embodiments according to the present invention relate to a light emitting device.

A light emitting device is known that includes a wire that connects an electrode pad of a semiconductor chip and a connection terminal. Patent Document 1 describes a first bonding section where a wire is bonded to an electrode pad of a semiconductor chip, a second bonding section where a wire is bonded to a connecting terminal, and a second bonding section formed continuously from the first bonding section. It is disclosed that wire breakage can be suppressed by providing a loop portion having a folded portion on the opposite side.

Japanese Patent Application Publication No. 2015-106602

There is a demand for further miniaturization of light emitting devices. Embodiments of the present invention aim to provide a light-emitting device and a method of manufacturing the light-emitting device that can be miniaturized.

According to one aspect of the present invention, a light emitting device includes: a support body including a first connection part; a light emitting element placed on the support body and including a second connection part; a wire that electrically connects the second connecting portion, and a coating resin that covers the light emitting element and the wire, the wire is connected to the first wire connecting portion; a first wire extension part connected to the first wire connection part and extending from the first wire connection part in a first direction opposite to the second connection part; and a first wire extension part connected to the first wire extension part and bent. a second wire bending part connected to the first wire bending part and extending in a second direction opposite to the first direction; and a second wire bending part connected to the second wire bending part and bent. The first wire extending portion and the second wire extending portion are located below the upper surface of the light emitting device.

According to one aspect of the present invention, a method for manufacturing a light emitting device includes a wire that electrically connects a first connection portion of a support and a second connection portion of a light emitting element placed on the support. A method for manufacturing a light emitting device, comprising the steps of: preparing the support on which the light emitting element is placed; forming an initial ball on a wire inserted into a capillary; a first connecting step of contacting and connecting the capillary to the first connecting portion of the support; a first moving step of moving the capillary to a first point located above the first connecting portion; and a first moving step of moving the capillary to a first point located above the first connecting portion; a second moving step of moving the capillary from the first point to a second point located in a first direction opposite to the second connection portion and located below the first point; a third moving step of moving the capillary from the third point to a third point located above the second point; and moving the capillary from the third point in a second direction opposite to the first direction and in the second direction. a fourth moving step of moving the capillary to a fourth point located below the third point; and a fifth moving step of moving the capillary from the fourth point to a fifth point located above the fourth point. , a sixth moving step of moving the capillary from the fifth point to a sixth point located closer to the first direction than the fifth point; and a sixth moving step of moving the capillary from the sixth point to the sixth point. a seventh moving step of moving the capillary to a seventh point located above the capillary, and moving the capillary from the seventh point to the second connection portion to connect the wire to the second connection portion of the light emitting element. and a covering resin forming step of forming a covering resin covering the light emitting element and the wire.

According to the light emitting device and the method for manufacturing the light emitting device according to an embodiment of the present invention, the light emitting device can be downsized.

FIG. 1 is a schematic perspective view showing a light emitting device according to an embodiment. FIG. 1 is a schematic top view showing a light emitting device according to an embodiment. 3 is a schematic cross-sectional view taken along line III-III in FIG. 2. FIG. 4 is a schematic cross-sectional view showing region IV in FIG. 3. FIG. FIG. 3 is a schematic cross-sectional view showing a second wire extension part of the light emitting device according to the embodiment. FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a light emitting device according to an embodiment. FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a light emitting device according to an embodiment. FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a light emitting device according to an embodiment. FIG. 2 is a schematic cross-sectional view showing a movement locus of a capillary in a method for manufacturing a light emitting device according to an embodiment.

Hereinafter, embodiments will be described with reference to the drawings. Since each drawing schematically shows an embodiment, the scale, spacing, positional relationship, etc. of each member may be exaggerated, or illustration of some members may be omitted. For example, the coating resin 40 is omitted in FIGS. 1 and 2 to show the internal structure of the light emitting device. The schematic top view of the light emitting device shown in FIG. 2 is a diagram of the light emitting device viewed from above. In this specification, the direction of the arrow on the Z-axis is defined as upward, and the direction opposite to the direction of the arrow on the Z-axis is defined as downward. As a sectional view, an end view showing only the cut surface may be shown.

In the following description, components having substantially the same functions are indicated by common reference numerals, and the description thereof may be omitted. In addition, terms indicating a specific direction or position (eg, "above", "below", and other terms including those terms) may be used. However, these terms are used only for clarity of relative orientation or position in the referenced drawings. If the relative directions or positional relationships using terms such as "upper" and "lower" in the referenced drawings are the same, the arrangement may not be the same in drawings other than this disclosure, actual products, etc. as in the referenced drawings. It's okay. In this specification, the positional relationship expressed as "above" includes cases in which they are in contact with each other, and cases in which they are not in contact with each other but are located above. Moreover, in this specification, "covering" is not limited to covering directly, but also includes covering via another member.

[Embodiment]
A light emitting device 100 according to an embodiment will be described with reference to FIGS. 1 to 5. The light emitting device 100 includes a support 10, a light emitting element 20, a wire 30, and a coating resin 40. The support body 10 includes a first connection portion 11 . The light emitting element 20 is arranged on the support body 10. The light emitting element 20 includes a second connection portion 21 . The wire 30 electrically connects the first connection portion 11 of the support body 10 and the second connection portion 21 of the light emitting element 20 . The wire 30 includes a first wire connection part 31 , a first wire extension part 32 , a first wire bend part 33 , a second wire extension part 34 , and a second wire bend part 35 . The first wire connection part 31 is connected to the first connection part 11 of the support body 10 . The first wire extending portion 32 is connected to the first wire connecting portion 31 and extends from the first wire connecting portion 31 in a first direction opposite to the second connecting portion 21 . The first wire bending section 33 is connected to the first wire extension section 32 and bent. The second wire extending portion 34 is connected to the first wire bending portion 33 and extends in a second direction opposite to the first direction. The second wire bending section 35 is connected to the second wire extension section 34 and bent. The first wire extending portion and the second wire extending portion are located below the upper surface 20A of the light emitting element 20. The coating resin 40 covers the light emitting element 20 and the wire 30. The first direction and the second direction are parallel to at least a portion of the lower surface 20B of the light emitting element 20. Further, the first direction and the second direction are perpendicular to the direction of the Z-axis arrow. In FIGS. 4 and 8, the first direction is a direction from the right side to the left side. In FIGS. 4 and 8, the second direction is a direction from the left side to the right side. Note that when the light emitting device includes a plurality of wires, the first direction and the second direction may differ depending on each wire. For example, the first and second directions of the left wire 30 and the right wire shown in FIGS. 2 and 3 are different. In FIGS. 4 and 8, the first direction from the right side to the left side is the direction in the left wire 30 shown in FIGS. 2 and 3. In this specification, the direction from the lower surface 20B side of the light emitting element 20 toward the upper surface 20A side of the light emitting element 20 is referred to as a third direction. The third direction is the same as the direction of the Z-axis arrow.

In the light emitting device 100 of the embodiment, the first wire extending portion 32 and the second wire extending portion 34 are located below the upper surface 20A of the light emitting element 20. Therefore, it becomes easier to lower the height of the wire 30 in the third direction than when the first wire extending portion 32 and the second wire extending portion 34 are located above the upper surface 20A of the light emitting element 20. Thereby, the light emitting device 100 can be downsized in the third direction. Furthermore, even if the coating resin 40 covering the wire 30 expands due to heat, the first wire extending portion 32, the first wire bending portion 33, and/or the second wire extending portion 34, etc. of the wire 30 may be deformed. The stress applied to the wire 30 can be alleviated. Thereby, breaking of the wire 30 can be suppressed.

Each element constituting the light emitting device 100 will be explained in detail below.

(Support 10)
The support body 10 is a member on which the light emitting element 20 is placed. The support body 10 includes a first connection portion 11 . The first connecting portion 11 has electrical conductivity. As shown in FIGS. 2 and 3, the support body 10 includes a lead frame 10A and a resin molded body 10B. The lead frame 10A has conductivity and functions as an electrode for feeding power to the light emitting element 20. In this embodiment, the first connection portion 11 of the support body 10 is a part of the lead frame 10A. The lead frame 10A is held by a resin molded body 10B. The upper surface of the resin molded body 10B defines a recess for accommodating the light emitting element 20. The light emitting element 20 is mounted on the lead frame 10A.

As the lead frame 10A, for example, a metal such as copper, aluminum, gold, silver, iron, nickel, or an alloy thereof, phosphor bronze, iron-containing copper, etc. is used, and the metal is rolled, punched, extruded, or etched by wet or dry etching. Alternatively, it can be formed into a predetermined shape by processing a combination of these. These may be a single layer or may have a laminated structure (for example, a cladding material). In particular, it is preferable to use copper, which is inexpensive and has high heat dissipation properties. Further, the lead frame 10A may include a plating layer on the surface. For the plating layer, for example, gold, silver, copper, platinum, aluminum, or an alloy containing one of these may be used for the purpose of improving reflectance. Since gold is less likely to corrode than silver or the like, when the plating layer contains gold, the reliability of the light emitting device 100 can be improved. When the plating layer contains silver, it is preferable to provide a protective layer such as silicon oxide on the surface of the plating layer. Thereby, it is possible to suppress discoloration of the plating layer containing silver due to sulfur components in the atmosphere. Examples of the method for forming the protective layer include known methods such as a vacuum process such as sputtering.

For the resin molded body 10B, a known material such as a thermosetting resin or a thermoplastic resin can be used as a resin material serving as a base material. In the case of thermoplastic resin, for example, polyphthalamide resin, polybutylene terephthalate (PBT), unsaturated polyester, etc. can be used. In the case of thermosetting resin, for example, epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, etc. can be used. In particular, it is preferable to use thermosetting resins such as epoxy resins and silicone resins, which have excellent heat resistance and light resistance, as the resin material.

It is preferable that the resin molded body 10B contains a light-reflective substance in the resin material serving as the above-mentioned base material. As the light-reflecting substance, it is preferable to use a member that is difficult to absorb light from the light-emitting element 20 and has a large difference in refractive index with respect to the base resin material. Examples of such light-reflective substances include titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, and aluminum nitride.

A black resin or a gray resin may be used as the resin molded body 10B. By using black resin or gray resin for the resin molded body 10B, even if the resin molded body 10B is discolored, it is possible to suppress a decrease in the light extraction efficiency of the light emitting device. The black resin and gray resin may contain fillers such as carbon such as acetylene black, activated carbon, and graphite, transition metal oxides such as iron oxide, manganese dioxide, cobalt oxide, and molybdenum oxide, or colored organic pigments. Examples include resins such as The density of colors such as black and gray may be adjusted by adjusting the amount of filler added. Examples of the resin include the resin material that serves as the base material of the resin molded body 10B described above.

As the support body 10, a wiring board including a substrate and wiring may be used. The substrate can be constructed using resin, ceramics, glass, or the like. Examples of the resin include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, and mixtures thereof. The wiring can be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. It may be a single layer or multiple layers of these metals or alloys.

(Light emitting element 20)
The light emitting element 20 is a semiconductor element that emits light by itself when a voltage is applied, and a known semiconductor element made of a nitride semiconductor or the like can be used. An example of the light emitting element is an LED chip. The light emitting element 20 is placed with the surface on which the electrodes are formed facing upward. The second connection portion 21 of the light emitting element 20 is electrically connected to the first connection portion 11 of the support body 10 via the wire 30. The conductive bumps placed on the electrodes of the light emitting element 20 and the wires 30 are directly connected. Thereby, the light emitting element 20 is electrically connected to the first connection part 11 of the support body 10 via the bump. When the conductive member such as a bump placed on the electrode of the light emitting element 20 is directly connected to the wire 30, the conductive member such as the bump placed on the electrode of the light emitting element 20 is directly connected to the wire 30. The second connection portion 21 is as follows. That is, in this specification, when the wire 30 is directly connected to a conductive member such as a bump arranged on the electrode of the light emitting element 20, the bump or the like arranged on the electrode of the light emitting element 20 The conductive member is included in the light emitting element 20. Note that the electrode of the light emitting element 20 and the wire 30 may be directly connected.

The light emitting element 20 includes a semiconductor stack. The semiconductor stack includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer sandwiched therebetween. The light emitting layer may have a structure such as a double heterojunction or a single quantum well (SQW), or may have a structure including a group of active layers such as a multiple quantum well (MQW). good. The semiconductor stack is configured to be able to emit visible light or ultraviolet light. A semiconductor stack including such a light emitting layer can include, for example, In _x Al _y Ga _1-xy N (0≦x, 0≦y, x+y≦1).

The semiconductor stack may have a structure including one or more light-emitting layers between an n-type semiconductor layer and a p-type semiconductor layer, or may have a structure including one or more light-emitting layers between an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. It may have a structure in which the structures included in this order are repeated multiple times. When the semiconductor laminate includes a plurality of light-emitting layers, it may contain light-emitting layers with different light-emitting peak wavelengths, or may contain light-emitting layers with the same light-emitting peak wavelength. Note that the expression that the emission peak wavelengths are the same includes cases where there is a variation within ±10 nm. The combination of emission peak wavelengths between the plurality of light emitting layers can be selected as appropriate. For example, if the semiconductor stack includes two light emitting layers, blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or , the light-emitting layer can be selected by a combination of green light and red light, etc. Each light-emitting layer may include a plurality of active layers having different emission peak wavelengths, or may include a plurality of active layers having the same emission peak wavelength.

Only one light-emitting element 20 may be mounted in one light-emitting device, or a plurality of light-emitting elements 20 may be mounted. In this case, in order to improve luminous intensity, a plurality of light emitting elements having the same emission peak wavelength may be combined. Further, for example, color reproducibility may be improved by combining a plurality of light emitting elements with different emission peak wavelengths so as to correspond to red, green, and blue. When the light-emitting device includes a plurality of light-emitting elements, all of them may be connected in series, in parallel, or in a combination of series and parallel connections.

(Wire 30)
The wire 30 is a conductive member that electrically connects the first connection portion 11 of the support body 10 and the second connection portion 21 of the light emitting element 20. As shown in FIG. 4, the wire 30 includes a first wire connecting portion 31, a first wire extending portion 32, a first wire bending portion 33, a second wire extending portion 34, and a second wire bending portion 35. ,including. The first wire connection part 31 is connected to the first connection part 11 of the support body 10 . The first wire extending portion 32 is connected to the first wire connecting portion 31 and extends from the first wire connecting portion 31 in a first direction opposite to the second connecting portion 21 . The first wire bending section 33 is connected to the first wire extension section 32 and bent. The second wire extending portion 34 is connected to the first wire bending portion 33 and extends in a second direction opposite to the first direction. The second wire bending section 35 is connected to the second wire extension section 34 and bent. The first wire extending portion 32 and the second wire extending portion 34 are located below the upper surface 20A of the light emitting element 20. Therefore, it becomes easier to reduce the height of the wire 30 in the third direction. This makes it easier to downsize the light emitting device 100 in the third direction. Further, even if the coating resin 40 covering the wire 30 expands due to heat, the first wire extending portion 32, the first wire bending portion 33, and/or the second wire extending portion 34, etc. of the wire 30 are deformed, so that the wire 30 Such stress can be alleviated. Thereby, breaking of the wire 30 can be suppressed.

As shown in FIG. 4, it is preferable that there is a gap between the first wire extension part 32 and the second wire extension part 34. As a result, the first wire extending portion 32 and the second wire extending portion 34 are easily deformed, so that it is possible to suppress the wire 30 from breaking. It is preferable that the first wire extending portion 32 and the second wire extending portion 34 are separated.

As shown in FIG. 4, in a cross-sectional view, the gap between the first wire extending portion 32 and the second wire extending portion 34 in the third direction from the lower surface 20B side of the light emitting element 20 to the upper surface 20A side of the light emitting element 20. The maximum length L1 is preferably shorter than the maximum length L2 of the second wire extension portion 34 in the third direction. Therefore, the volume of the coating resin 40 disposed in the gap between the first wire extending section 32 and the second wire extending section 34 can be reduced. Thereby, deformation of the wire 30 by the coating resin 40 disposed in the gap between the first wire extending portion 32 and the second wire extending portion 34 can be suppressed. Note that in the third direction, at least a portion of the first wire extending section 32 overlaps with the second wire extending section 34.

As shown in FIG. 4, it is preferable that at least a portion of the first wire extension section 32 slopes downward as it progresses in the first direction. Thereby, the volume of the coating resin 40 disposed below the first wire extension part 32 can be reduced, so that deformation of the wire 30 can be suppressed.

In a top view, it is preferable that at least a portion of the surface of the second wire extending portion 34 is flat. In other words, as shown in FIG. 5, it is preferable that at least a portion of the surface of the second wire extending portion 34 facing upward has a flat portion 34A that is a flat surface. By doing so, the length L3 of the second wire extension portion 34 in the fourth direction perpendicular to the first direction and the third direction can be increased. Thereby, deformation of the wire 30 due to force from the fourth direction can be suppressed. Note that in FIG. 5, the first direction is a direction from the front side to the back side. In FIG. 5, the third direction is a direction from the bottom to the top. In FIG. 5, the fourth direction is a direction from the right side to the left side. At least a portion of the surface of the second wire extending portion 34 facing downward may have a flat portion 34B that is a flat surface.

As shown in FIG. 5, the maximum length L3 of the second wire extension part 34 in the fourth direction is preferably longer than the maximum length L4 of the second wire extension part 34 in the third direction. Thereby, deformation of the wire 30 due to force from the fourth direction can be suppressed.

As shown in FIG. 4, the wire 30 may further include a third wire extension part 36, a third wire bending part 37, a fourth wire extension part 38, and a second wire connection part 39. good. The third wire extending portion 36 is connected to the second wire bending portion 35 and extends upward and in the second direction. The third wire bending section 37 is connected to the third wire extension section 36 and bent. The fourth wire extending portion 38 is connected to the third wire bending portion 37 and extends downward and in the second direction. The second wire connection portion 39 is connected to the fourth wire extension portion 38 and connected to the second connection portion 21 of the light emitting device 20 .

As the material of the wire 30, for example, metals such as gold, copper, silver, platinum, aluminum, palladium, or alloys containing one or more of these can be used. When the material of the wire 30 contains gold, it has excellent thermal resistance and is less likely to break due to stress from the coating resin 40. When the material of the wire 30 contains silver, the light reflectance of the wire can be easily improved, so that the light extraction efficiency of the light emitting device 100 can be improved. When the wire 30 is a wire containing both gold and silver, the content ratio of silver is, for example, 15% to 20%, 45% to 55%, 70% to 90%, or 95% to 99%. It can be a range. In particular, when the content ratio of silver is 45% or more and 55% or less, the possibility of sulfidation can be reduced while obtaining a high light reflectance. The wire diameter of the wire can be selected as appropriate, and can be, for example, 5 μm or more and 50 μm or less. The diameter of the wire is more preferably 10 μm or more and 40 μm or less, even more preferably 15 μm or more and 30 μm or less.

(Coating resin 40)
The coating resin 40 is a member that covers the light emitting element 20 and the wire 30. Thereby, the light emitting element 20 and the wire 30 can be protected from external force. The coating resin 40 covers the first wire connection part 31, the first wire extension part 32, the first wire bend part 33, the second wire extension part 34, and the second wire bend part 35 of the wire 30. ing. The coating resin 40 may cover the third wire extension part 36, the third wire bending part 37, the fourth wire extension part 38, and the second wire connection part 39 of the wire 30.

The coating resin 40 can have functions such as wavelength conversion and/or light reflection depending on the particles added to the coating resin 40. Specifically, the coating resin 40 may contain a fluorescent material and/or a light reflective substance in the resin material. As the resin material of the coating resin 40, known materials such as thermosetting resins and thermoplastic resins can be used. In the case of thermoplastic resin, for example, polyphthalamide resin, polybutylene terephthalate (PBT), unsaturated polyester, etc. can be used. In the case of thermosetting resin, for example, epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, etc. can be used. In particular, it is preferable to use thermosetting resins such as epoxy resins and silicone resins, which have excellent heat resistance and light resistance, as the resin material.

When the coating resin 40 contains a phosphor, color adjustment of the light emitting device 100 becomes easy. Examples of the phosphor include yttrium-aluminum-garnet-based phosphor (e.g., Y ₃ (Al, Ga) ₅ O ₁₂ :Ce), lutetium-aluminum-garnet-based phosphor (e.g., Lu ₃ (Al, Ga) ₅ O). ₁₂ :Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb ₃ (Al, Ga) ₅ O ₁₂ :Ce), CCA-based phosphor (e.g., Ca ₁₀ (PO ₄ ) ₆ Cl ₂ :Eu), SAE-based phosphors (e.g., Sr ₄ Al ₁₄ O ₂₅ :Eu), chlorosilicate-based phosphors (e.g., Ca ₈ MgSi ₄ O ₁₆ Cl ₂ :Eu), β-sialon-based phosphors (e.g., (Si, Al)) ₃ (O,N) ₄ :Eu), α-sialon-based phosphor (e.g., Ca(Si,Al) ₁₂ (O,N) ₁₆ :Eu), SLA-based phosphor (e.g., SrLiAl ₃ N ₄ :Eu) , nitride-based phosphors such as CASN-based phosphors (e.g., CaAlSiN ₃ :Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN ₃ :Eu), KSF-based phosphors (e.g., K ₂ SiF ₆ :Mn), KSAF-based phosphor (for example, K ₂ Si _0.99 Al _0.01 F _5.99 :Mn) or MGF-based phosphor (for example, 3.5MgO・0.5MgF ₂・GeO ₂ :Mn) fluoride-based phosphors such as, phosphors having a perovskite structure (e.g., CsPb(F,Cl,Br,I) ₃ ), quantum dot phosphors (e.g., CdSe, InP, AgInS ₂ or AgInSe ₂ ), etc. can be used.

The KSAF-based phosphor may have a composition represented by the following formula (I).
M ₂ [Si _p Al _q Mn _r F _s ] (I)

In formula (I), M represents an alkali metal and may contain at least K. Mn may be a tetravalent Mn ion. p, q, r, and s may satisfy 0.9≦p+q+r≦1.1, 0<q≦0.1, 0<r≦0.2, and 5.9≦s≦6.1. Preferably, 0.95≦p+q+r≦1.05 or 0.97≦p+q+r≦1.03, 0<q≦0.03, 0.002≦q≦0.02 or 0.003≦q≦0.015. , 0.005≦r≦0.15, 0.01≦r≦0.12 or 0.015≦r≦0.1, 5.92≦s≦6.05 or 5.95≦s≦6.025 It may be. For example, K ₂ [Si _0.946 Al _0.005 Mn _0.049 F _5.995 ], K ₂ [Si _0.942 Al _0.008 Mn _0.050 F _5.992 ], K ₂ [Si _{0. 939} Al _0.014 Mn _0.047 F _5.986 ]. According to such a KSAF-based phosphor, it is possible to obtain red light emission with high brightness and a narrow half-width of the emission peak wavelength.

When the coating resin 40 contains a light-reflecting substance, the light distribution of the light emitting device 100 can be easily adjusted. As the light-reflecting substance, it is preferable to use a member that is difficult to absorb light from the light-emitting element 20 and has a large refractive index difference with respect to the resin material of the coating resin 40. Examples of such light-reflective substances include titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, and aluminum nitride. For example, the light-reflective substance can be contained in an amount of 10% by weight or more and 90% by weight or less based on the resin material of the coating resin 40.

The maximum length of the coating resin 40 in the vertical direction is not particularly limited. In other words, the maximum length of the coating resin 40 in the third direction is not particularly limited. It is preferable that the maximum length of the coating resin 40 in the vertical direction (third direction) is 1.5 times or more and 1.9 times or less the maximum length of the light emitting element 20 in the vertical direction (third direction). When the maximum length of the coating resin 40 in the vertical direction is 1.5 times or more the maximum length of the light emitting element 20 in the vertical direction, it is possible to suppress the wire 30 from being exposed from the coating resin 40. Since the maximum length of the covering resin 40 in the vertical direction is 1.9 times or less the maximum length of the light emitting element 20 in the vertical direction, it becomes easier to downsize the light emitting device 100 in the vertical direction. For example, the maximum length of the coating resin 40 in the vertical direction may be 250 μm or more and 350 μm or less. The maximum length of the light emitting element 20 in the vertical direction may be 150 μm or more and 250 μm or less.

It is preferable that the maximum length of the coating resin 40 in the vertical direction (third direction) is 1.1 times or more and 1.5 times or less the maximum length of the wire 30 in the vertical direction (third direction). When the maximum length of the coating resin 40 in the vertical direction is 1.1 times or more the maximum length of the wire 30 in the vertical direction, it is possible to suppress the wire 30 from being exposed from the coating resin 40. Since the maximum length of the coating resin 40 in the vertical direction is 1.5 times or less the maximum length of the wire 30 in the vertical direction, it becomes easier to downsize the light emitting device 100 in the vertical direction. For example, the maximum length of the wire 30 in the vertical direction may be 170 μm or more and 300 μm or less.

The maximum length from the top surface of the light emitting element 20 to the top surface of the coating resin 40 in the vertical direction is not particularly limited. In other words, the maximum length from the top surface of the light emitting element 20 to the top surface of the coating resin 40 in the third direction is not particularly limited. The maximum length from the top surface of the light emitting element 20 to the top surface of the coating resin 40 in the vertical direction (third direction) is 0.6 or more times 0.9 of the maximum length of the light emitting element 20 in the vertical direction (third direction) It is preferable that the amount is less than twice that. The wire 30 is exposed from the coating resin 40 because the maximum length from the top surface of the light emitting element 20 in the vertical direction to the top surface of the coating resin 40 is 0.6 times or more the maximum length of the light emitting device 20 in the vertical direction. can be restrained from doing so. Since the maximum length from the top surface of the light emitting element 20 to the top surface of the coating resin 40 in the vertical direction is 0.9 times or less the maximum length of the light emitting element 20 in the vertical direction, the light emitting device 100 can be made smaller in the vertical direction. It becomes easier to become For example, the maximum length from the top surface of the light emitting element 20 to the top surface of the coating resin 40 in the vertical direction may be 50 μm or more and 200 μm or less.

The maximum length from the top surface of the light emitting element 20 to the top of the wire 30 in the vertical direction is not particularly limited. In other words, the maximum length from the top surface of the light emitting element 20 to the top of the wire 30 in the third direction is not particularly limited. The maximum length from the top surface of the light emitting element 20 to the top of the wire 30 in the vertical direction (third direction) is 0.3 times or more and 0.6 times the maximum length of the light emitting element 20 in the vertical direction (third direction). It is preferable that it is below. The wire 30 is exposed from the coating resin 40 because the maximum length from the top surface of the light emitting element 20 in the vertical direction to the top of the wire 30 is 0.3 times or more the maximum length of the light emitting element 20 in the vertical direction. can be suppressed. By making the maximum length from the top surface of the light emitting element 20 to the top of the wire 30 in the vertical direction 0.6 times or less of the maximum length of the light emitting element 20 in the vertical direction, the light emitting device 100 can be miniaturized in the vertical direction. It becomes easier. For example, the maximum length from the top surface of the light emitting element 20 to the top of the wire 30 in the vertical direction may be 20 μm or more and 100 μm or less.

The maximum length of the wire 30 in the first direction is not particularly limited. For example, it is preferable that the maximum length of the wire 30 in the first direction is 1.8 times or more and 3 times or less the maximum length of the light emitting element 20 in the vertical direction (third direction). The maximum length of the wire 30 in the first direction is 1.8 times or more the maximum length of the light emitting element 20 in the vertical direction, so that the length of the first wire extension part 32 and/or the second wire extension part 34 is It becomes easier to lengthen the length. Thereby, the first wire extending portion 32 and/or the second wire extending portion 34 are easily deformed, so that breakage of the wire 30 can be suppressed. Since the maximum length of the wire 30 in the first direction is three times or less the maximum length of the light emitting element 20 in the vertical direction, it becomes easier to downsize the light emitting device 100 in the first direction. For example, the maximum length of the left wire 30 shown in FIG. 2 in the first direction may be 200 μm or more and 500 μm or less. The maximum length of the right wire 30 shown in FIG. 2 in the first direction may be 300 μm or more and 500 μm or less. Note that the first direction is the direction in which each wire extends, and as described above, the first direction of the left wire 30 and the right wire shown in FIG. 2 are different.

The minimum length from the light emitting element 20 to the first wire connection part 31 when viewed from above is not particularly limited. The minimum length from the light emitting element 20 to the first wire connection part 31 when viewed from above is 0.8 times or more and 1.4 times or less the maximum length of the light emitting element 20 in the vertical direction (third direction). preferable. The light emitting element 20 and the wire 30 are in contact because the minimum length from the light emitting element 20 to the first wire connection part 31 in a top view is 0.8 times or more the maximum length of the light emitting element 20 in the vertical direction. can be easily suppressed. Since the minimum length from the light emitting element 20 to the first wire connection part 31 when viewed from the top is 1.4 times or less the maximum length of the light emitting element 20 in the vertical direction, it is easy to downsize the light emitting device when viewed from the top. Become. For example, the minimum length of the left wire 30 shown in FIG. 2 from the first wire connection portion 31 to the light emitting element 20 may be 150 μm or more and 400 μm or less. The minimum length of the right wire 30 shown in FIG. 2 from the first wire connection part 31 to the light emitting element 20 may be 200 μm or more and 500 μm or less.

Next, an example of a method for manufacturing the light emitting device 100 will be described with reference to FIGS. 6 to 8.

<Preparation process>
As shown in FIG. 6, a support 10 on which a light emitting element 20 is placed is prepared. By placing the light emitting element 20 on the support 10, the support 10 on which the light emitting element 20 is placed can be prepared. Further, the support 10 on which the light emitting element 20 is mounted may be prepared by purchasing or the like.

<First connection process>
As shown in FIG. 7A, an initial ball 30A is formed on the wire 30 inserted into the capillary 50. Specifically, the initial ball 30A is formed by melting the tip of the wire 30 by electric discharge or the like. Conditions such as electric discharge can be appropriately selected depending on the composition and diameter of the wire 30, the intended size of the initial ball 30A, and the like.

Next, as shown in FIG. 7B, the initial ball 30A of the wire 30 is brought into contact with the first connection part 11 of the support body 10 and connected. For example, the initial ball 30A and the first connecting portion 11 on the support body 10 are connected by crimp connection. A part of the first wire connection portion 31 of the wire 30 is formed by the initial ball 30A.

A recrystallized region where the wire 30 is altered may be formed due to electrical discharge when forming the initial ball 30A. The recrystallized region is a region whose grains are coarser than the region not affected by heat (normal region). The recrystallized region is a region that is more susceptible to stress from the coating resin 40 than the normal region, and breakage of the wire 30 can be suppressed by relaxing the stress applied to this region. In this embodiment, the wire 30 includes a first wire connecting portion 31, a first wire extending portion 32, a first wire bending portion 33, a second wire extending portion 34, a second wire bending portion 35, It is easy to deform by including. Thereby, the stress applied to a portion of the wire located near the portion where the initial ball 30A is formed can be alleviated, so that breakage of the wire 30 can be suppressed. Preferably, no recrystallized region is formed in the third wire extension portion 36 of the wire 30. By doing so, breakage of the wire 30 can be easily suppressed. Further, it is preferable that the recrystallized region is not formed in the second wire bent portion 35 of the wire 30. Preferably, no recrystallized region is formed in the second wire extension portion 34 of the wire 30. Preferably, no recrystallized region is formed in the first wire bent portion 33 of the wire 30. By increasing the portion of the wire 30 in which no recrystallized region is formed, breakage of the wire 30 can be more easily suppressed.

<First movement process>
As shown in FIG. 8, a first moving step is performed in which the capillary is moved to a first point P1 located above the first connecting portion 11 of the support 10. The other part of the wire 30 extending from the part of the wire 30 in contact with the first connection part 11 of the support body 10 is inserted into the through hole of the capillary and is not fixed. Therefore, as the capillary moves in the first moving step, the wire 30 is drawn out from the tip of the capillary. Also in the second moving step, the third moving step, the fourth moving step, the fifth moving step, the sixth moving step, and the seventh moving step, which will be described later, the capillary moves while drawing out the wire 30 from its tip. A part of the first wire connection portion 31 of the wire 30 is formed by the first moving step. The first point P1 is preferably located below the upper surface 20A of the light emitting element 20. By doing so, it becomes easier to position the first wire extending portion 32 and the second wire extending portion 34 of the wire 30 formed in a step described below below the upper surface 20A of the light emitting element 20.

<Second movement process>
As shown in FIG. 8, the capillary is moved from the first point P1 to the second point P2, which is located in the first direction opposite to the second connection portion 21 of the light emitting element 20 and located below the first point P1. A second moving step is performed. At least a portion of the first wire extension portion 32 of the wire 30 is formed by the second moving step.

<Third movement process>
As shown in FIG. 8, a third moving step is performed in which the capillary is moved from the second point P2 to a third point P3 located above the second point P2. A part of the first wire bent portion 33 of the wire 30 is formed by the third moving step. The third point P3 is preferably located above the upper surface 20A of the light emitting element 20. By doing so, it becomes easier to form the first wire bent portion 33 to be bent.

<Fourth movement process>
As shown in FIG. 8, a fourth moving step of moving the capillary from the third point P3 to a fourth point P4 located in the second direction opposite to the first direction and located below the third point P3. I do. A portion of the first wire bent portion 33 of the wire 30 is formed by the fourth moving step. Moreover, at least a portion of the second wire extension portion 34 of the wire 30 is formed by the fourth moving step. It is preferable that the fourth point P4 is located below the first point P1. By doing so, it becomes easier to position the second wire extension portion 34 of the wire 30 below the upper surface 20A of the light emitting element 20. The fourth point P4 is preferably located closer to the second direction than the first point P1. By doing so, it becomes easier to lengthen the second wire extension portion 34 of the wire 30. As a result, the length that the second wire extension portion 34 of the wire 30 can extend due to stress also increases, so that the wire 30 can be prevented from breaking. The fourth point P4 is preferably located below the first point P1 and on the second direction side of the first point P1. By doing so, a portion of the wire located at the tip of the capillary 50 can come into contact with a portion of the wire formed in the first moving step. Thereby, the flat portion 34A and/or the flat portion 34B can be easily formed on the surface of the second wire extending portion 34.

<Fifth movement process>
As shown in FIG. 8, a fifth moving step is performed in which the capillary is moved from the fourth point P4 to the fifth point P5 located above the fourth point P4. A portion of the second wire bent portion 35 of the wire 30 is formed by the fifth moving step. Moreover, at least a portion of the third wire extension portion 36 of the wire 30 is formed by the fifth moving step. It is preferable that the fifth point P5 is located above the third point P3. By doing so, the third wire extension portion 36 of the wire 30 can be made longer, which makes it easier to prevent the wire 30 and the light emitting element 20 from coming into contact with each other.

<Sixth movement process>
As shown in FIG. 8, a sixth moving step is performed in which the capillary is moved from the fifth point P5 to the sixth point P6 located on the first direction side from the fifth point P5. The operation of the capillary in the sixth movement step is a so-called reverse operation. By moving the capillary to the sixth point P6 in the sixth movement step, the wire 30 can be pulled diagonally. In the first direction, it is preferable that the sixth point P6 is further away from the second connection portion 21 of the light emitting element 20 than the second point P2 and the third point P3. By doing so, it becomes easier to pull the wire 30 in an oblique direction.

<Seventh movement process>
As shown in FIG. 8, a seventh moving step is performed in which the capillary is moved from the sixth point P6 to the seventh point P7 located above the sixth point P6. A portion of the third wire bent portion 37 of the wire 30 is formed by the seventh moving step. Moreover, at least a portion of the fourth wire extension portion 38 of the wire 30 is formed by the seventh moving step.

<Second connection process>
As shown in FIG. 8, the capillary is moved from the seventh point P7 to the second connection part 21 of the light emitting element 20, and a second connection process is performed in which the wire is connected to the second connection part 21 of the light emitting element 20. The second wire connection portion 39 of the wire 30 is formed by the second connection step.

<Coating resin forming process>
A covering resin forming step is performed to form a covering resin 40 covering the light emitting element 20 and the wire 30. The coating resin 40 can be formed by a known method such as potting. For example, the coating resin 40 can be formed by supplying a liquid or paste resin material using a dispense nozzle or the like, and then curing it with heat or light. By doing so, the light emitting device 100 shown in FIG. 3 can be manufactured. The method for manufacturing the light emitting device 100 shown above is an example, and various modifications are possible as long as there is no technical contradiction.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that can be implemented by appropriately modifying the design based on the above-described embodiments of the present invention by those skilled in the art also belong to the scope of the present invention as long as they encompass the gist of the present invention. In addition, those skilled in the art will be able to come up with various changes and modifications within the scope of the present invention, and these changes and modifications also fall within the scope of the present invention.

10 Support body 11 First connection part 20 Light emitting element 21 Second connection part 30 Wire 31 First wire connection part 32 First wire extension part 33 First wire bending part 34 Second wire extension part 35 Second wire bending part 36 3-wire extension part 37 3rd wire bending part 38 4th wire extension part 39 2nd wire connection part 40 Coating resin 50 Capillary

Claims (14)

a support including a first connection;
a light emitting element placed on the support and including a second connection part;
a wire that electrically connects the first connection part and the second connection part;
A coating resin that covers the light emitting element and the wire,
The wire is connected to a first wire connection part connected to the first connection part, and is connected to the first wire connection part and extends from the first wire connection part in a first direction opposite to the second connection part. a first wire bending part that is connected to the first wire bending part and bent; and a first wire bending part that is connected to the first wire bending part and extends in a second direction opposite to the first direction. a second wire extending portion, and a second wire bending portion connected to and bent with the second wire extending portion,
the first wire extending portion and the second wire extending portion are located below the upper surface of the light emitting element ;
In the light emitting device , at least a portion of the surface of the second wire extending portion is flat when viewed from above . The light emitting device according to claim 1, further comprising a gap between the first wire extending portion and the second wire extending portion. In a cross-sectional view, the maximum length of the gap in the third direction from the lower surface side of the light emitting element to the upper surface side of the light emitting element is shorter than the maximum length of the second wire extension part in the third direction. 2. The light emitting device according to 2. The light emitting device according to any one of claims 1 to 3, wherein at least a portion of the first wire extension section slopes downward as it advances in the first direction. The light emitting device according to any one of claims 1 to 4 , wherein the maximum length of the coating resin in the vertical direction is 1.5 times or more and 1.9 times or less the maximum length of the light emitting element in the vertical direction. . The light emitting device according to any one of claims 1 to 5 , wherein the maximum length of the coating resin in the vertical direction is 1.1 times or more and 1.5 times or less the maximum length of the wire in the vertical direction. 7. The maximum length from the top surface of the light emitting element to the top surface of the coating resin in the vertical direction is 0.6 times or more and 0.9 times or less the maximum length of the light emitting element in the vertical direction. The light emitting device according to any one of the items. Any one of claims 1 to 7 , wherein the maximum length from the top surface of the light emitting element to the top of the wire in the vertical direction is 0.3 times or more and 0.6 times or less the maximum length of the light emitting element in the vertical direction. 2. The light emitting device according to item 1. The light emitting device according to any one of claims 1 to 8 , wherein the maximum length of the wire in the first direction is 1.8 times or more and 3 times or less the maximum length of the light emitting element in the vertical direction. Any one of claims 1 to 9 , wherein the minimum length from the light emitting element to the first wire connection part in a top view is 0.8 times or more and 1.4 times or less the maximum length of the light emitting element in the vertical direction. 2. The light emitting device according to item 1. A method for manufacturing a light-emitting device, comprising a step of forming a wire that electrically connects a first connection portion of a support and a second connection portion of a light-emitting element placed on the support,
preparing the support on which the light emitting element is placed;
a first connecting step of forming an initial ball on the wire inserted into the capillary, and connecting the initial ball by contacting the first connecting portion of the support;
a first moving step of moving the capillary to a first point located above the first connection part;
a second moving step of moving the capillary from the first point to a second point located in a first direction opposite to the second connection portion and located below the first point;
a third moving step of moving the capillary from the second point to a third point located above the second point;
a fourth moving step of moving the capillary from the third point to a fourth point located in a second direction opposite to the first direction and located below the third point;
a fifth moving step of moving the capillary from the fourth point to a fifth point located above the fourth point;
a sixth moving step of moving the capillary from the fifth point to a sixth point located closer to the first direction than the fifth point;
a seventh moving step of moving the capillary from the sixth point to a seventh point located above the sixth point;
a second connecting step of moving the capillary from the seventh point to the second connecting portion to connect the wire to the second connecting portion of the light emitting element;
a coating resin forming step of forming a coating resin covering the light emitting element and the wire;
in order ,
In the fourth moving step, a portion of the wire located at the tip of the capillary comes into contact with a portion of the wire formed in the first moving step. 12. The method of manufacturing a light emitting device according to claim 11 , wherein the fourth point is located below the first point and closer to the second direction than the first point. The method for manufacturing a light emitting device according to claim 11 or 12 , wherein the fourth point is located above the second point. 14. The method of manufacturing a light emitting device according to claim 11 , wherein in the first direction, the sixth point is further away from the second connection portion than the second point and the third point.

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