JP7379056B2 - 受光素子、検知システム - Google Patents

受光素子、検知システム Download PDF

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Publication number
JP7379056B2
JP7379056B2 JP2019181577A JP2019181577A JP7379056B2 JP 7379056 B2 JP7379056 B2 JP 7379056B2 JP 2019181577 A JP2019181577 A JP 2019181577A JP 2019181577 A JP2019181577 A JP 2019181577A JP 7379056 B2 JP7379056 B2 JP 7379056B2
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JP
Japan
Prior art keywords
wavelength
reflectance
light receiving
layer
receiving element
Prior art date
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Active
Application number
JP2019181577A
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English (en)
Japanese (ja)
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JP2021057527A5 (enExample
JP2021057527A (ja
Inventor
武志 内田
貴子 須賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2019181577A priority Critical patent/JP7379056B2/ja
Priority to US17/036,000 priority patent/US11575060B2/en
Publication of JP2021057527A publication Critical patent/JP2021057527A/ja
Publication of JP2021057527A5 publication Critical patent/JP2021057527A5/ja
Application granted granted Critical
Publication of JP7379056B2 publication Critical patent/JP7379056B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0256—Compact construction
    • G01J3/0259—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
    • G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
    • G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
    • G01J3/513—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters having fixed filter-detector pairs
    • G01J2003/516—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters having fixed filter-detector pairs with several stacked filters or stacked filter-detector pairs
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
    • G02B5/0833—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Light Receiving Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
JP2019181577A 2019-10-01 2019-10-01 受光素子、検知システム Active JP7379056B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019181577A JP7379056B2 (ja) 2019-10-01 2019-10-01 受光素子、検知システム
US17/036,000 US11575060B2 (en) 2019-10-01 2020-09-29 Light-receiving element and detection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019181577A JP7379056B2 (ja) 2019-10-01 2019-10-01 受光素子、検知システム

Publications (3)

Publication Number Publication Date
JP2021057527A JP2021057527A (ja) 2021-04-08
JP2021057527A5 JP2021057527A5 (enExample) 2022-10-07
JP7379056B2 true JP7379056B2 (ja) 2023-11-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019181577A Active JP7379056B2 (ja) 2019-10-01 2019-10-01 受光素子、検知システム

Country Status (2)

Country Link
US (1) US11575060B2 (enExample)
JP (1) JP7379056B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022270355A1 (ja) * 2021-06-24 2022-12-29 パナソニックＩｐマネジメント株式会社 撮像システム、撮像システムに用いられる方法、および撮像システムに用いられるコンピュータプログラム
TW202510318A (zh) * 2023-08-28 2025-03-01 日商索尼半導體解決方案公司 光檢測裝置及測距裝置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308368A (ja) 2000-04-26 2001-11-02 Mitsubishi Electric Corp 光共振器構造素子
JP2003508876A (ja) 1999-08-20 2003-03-04 セイコーエプソン株式会社 複数波長発光素子および電子機器
US20170309757A1 (en) 2016-04-25 2017-10-26 International Business Machines Corporation Multi-wavelength detector array incorporating two dimensional and one dimensional materials
US20170345958A1 (en) 2016-05-27 2017-11-30 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Resonant-Cavity Infrared Photodetectors with Fully-Depleted Absorbers
CN109659386A (zh) 2018-12-06 2019-04-19 中国科学院上海微系统与信息技术研究所 多光谱超导纳米线单光子探测器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1204148A2 (en) 2000-11-06 2002-05-08 Agere Systems Optoelectronics Guardian Corporation Planar resonant cavity enhanced photodetector
JP5303962B2 (ja) * 2008-02-28 2013-10-02 三菱電機株式会社 半導体受光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003508876A (ja) 1999-08-20 2003-03-04 セイコーエプソン株式会社 複数波長発光素子および電子機器
JP2001308368A (ja) 2000-04-26 2001-11-02 Mitsubishi Electric Corp 光共振器構造素子
US20170309757A1 (en) 2016-04-25 2017-10-26 International Business Machines Corporation Multi-wavelength detector array incorporating two dimensional and one dimensional materials
US20170345958A1 (en) 2016-05-27 2017-11-30 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Resonant-Cavity Infrared Photodetectors with Fully-Depleted Absorbers
CN109659386A (zh) 2018-12-06 2019-04-19 中国科学院上海微系统与信息技术研究所 多光谱超导纳米线单光子探测器

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US20210098644A1 (en) 2021-04-01
US11575060B2 (en) 2023-02-07
JP2021057527A (ja) 2021-04-08

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