JP7378552B2 - トライボロジー被覆があるマイクロメカニカルな機能的アセンブリー - Google Patents
トライボロジー被覆があるマイクロメカニカルな機能的アセンブリー Download PDFInfo
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- 239000011248 coating agent Substances 0.000 title description 2
- 238000000576 coating method Methods 0.000 title description 2
- 239000010432 diamond Substances 0.000 claims description 50
- 229910003460 diamond Inorganic materials 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 20
- 229910052717 sulfur Inorganic materials 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000007306 functionalization reaction Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 3
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 125000004434 sulfur atom Chemical group 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B15/00—Escapements
- G04B15/14—Component parts or constructional details, e.g. construction of the lever or the escape wheel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
- B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0075—For improving wear resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B1/00—Driving mechanisms
- G04B1/10—Driving mechanisms with mainspring
- G04B1/14—Mainsprings; Bridles therefor
- G04B1/145—Composition and manufacture of the springs
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B15/00—Escapements
- G04B15/06—Free escapements
- G04B15/08—Lever escapements
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0074—Watchmakers' or watch-repairers' machines or tools for working materials for treatment of the material, e.g. surface treatment
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0074—Watchmakers' or watch-repairers' machines or tools for working materials for treatment of the material, e.g. surface treatment
- G04D3/0087—Watchmakers' or watch-repairers' machines or tools for working materials for treatment of the material, e.g. surface treatment for components of the escapement mechanism, e.g. lever escapement, escape wheel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/035—Microgears
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Micromachines (AREA)
Description
- 反応性ガス(12)は、SF6、SF4、SF2のようなSとFを含み、流量は、3~20sccm(標準立方cm/分:cm3・分-1)、好ましくは5~10sccm、の範囲内である。
- 無線周波数(RF)のパワーは、30~70W、好ましくは40~60Wの範囲内である。
- 反応器内の圧力は、3~15×106N/m2(30~150バール)、好ましくは8~12×106N/m2(80~120バール)、の範囲内である。
- 反応時間は、20~120分、好ましくは30~70分、の範囲内である。
2 第1の部分
2a 機能面とも呼ばれる第1の接触面
3 第2の部分
3a 機能面とも呼ばれる第2の接触面
4 パレット
4a 安静面
4b インパルス面
5 アンカー
6 エスケープ車
7 歯
7c 安静面
7d インパルス面
8 基材
9 トライボロジー層
9a ダイヤモンドを含む第1の層
9b SとFを含む第2の層
10 官能化装置
11 反応器
12 ガス
13 プラズマ
14 電極
Claims (14)
- 第1の基材(8)によって形成される少なくとも1つの第1の部分(2)を含むマイクロメカニカルな機能的アセンブリー(1)であって、
前記第1の基材(8)上に、第2の機能面(3a)と摩擦接触するように意図されている第1の機能面(2a)があり、
前記第2の機能面(3a)は、前記第1の部分(2)、又は第2の基材によって形成される少なくとも1つの第2の部分(3)のいずれかに属し、
前記第2の基材上に、前記第2の機能面(3a)があり、
前記第2の部分(3)は、前記第1の部分(2)と前記機能的アセンブリー(1)を構成し、
前記第1の機能面(2a)と前記第2の機能面(3a)がある前記機能的アセンブリー(1)は、第1の層(9a)によって形成され、
この第1の層(9a)は、前記第1の基材(8)と前記第2の基材(8)と一体的となっているか、又は前記第1の基材(8)と前記第2の基材(8)とは別個のものであるかのいずれかであり、
前記第1の層(9a)は、超ナノ結晶、ナノ結晶又は微結晶のダイヤモンドを含み、
前記第1の層(9a)上に、S及びF原子を含む第2の層(9b)があり、
前記第2の層(9b)は、2~50nmの範囲内の平均厚みを有する
ことを特徴とする機能的アセンブリー(1)。 - 前記第2の層(9b)は、SF6を含む
ことを特徴とする請求項1に記載の機能的アセンブリー(1)。 - 前記第2の層(9b)は、ロッドによって形成されている
ことを特徴とする請求項1に記載の機能的アセンブリー(1)。 - 前記第1の部分(2)は、パレット(4)であり、
前記第2の部分(3)は、エスケープ車(6)である
ことを特徴とする請求項1に記載の機能的アセンブリー(1)。 - 前記第1の部分(2)は、可動部品のシャフトであり、
前記第2の部分(3)は、ベアリングである
ことを特徴とする請求項1に記載の機能的アセンブリー(1)。 - 前記第1の部分(2)と前記第2の部分(3)は、歯車の歯である
ことを特徴とする請求項1に記載の機能的アセンブリー(1)。 - 前記第2の機能面は、前記第1の部分(2)に属し、
前記第1の部分(2)は、ブレードによって形成されるバレルばねであり、
前記ブレードの前面が、前記第1の機能面を形成し、
前記ブレードの背面が、前記第2の機能面を形成する
ことを特徴とする請求項1に記載の機能的アセンブリー(1)。 - 前記第1の層(9a)が前記第1の基材(8)と前記第2の基材(8)とは異なる場合に、前記第1の基材(8)と前記第2の基材(8)は、セラミックス、ケイ素、酸化ケイ素、窒化ケイ素、炭化ケイ素及び鋼から選択される材料によって作られている
ことを特徴とする請求項1に記載の機能的アセンブリー(1)。 - 超ナノ結晶、ナノ結晶又は微結晶のダイヤモンドを官能化する方法であって、
a)前記超ナノ結晶、ナノ結晶又は微結晶のダイヤモンドの第1の層(9a)で被覆された少なくとも1つの第1の基材(8)、又は超ナノ結晶、ナノ結晶又は微結晶のダイヤモンドによって作られた少なくとも1つの第1の基材(8)、を用意する用意ステップと、及び
b)反応器(11)と電極(14)がある反応性イオンエッチング装置(10)において前記用意ステップa)の第1の基材(8)を官能化するステップとを備え、
この官能化が、反応性ガス(12)としてSとFを含む化合物を用いて、40~60Wの範囲内の高周波パワーで行われ、
前記電極(14)の間の電圧が、130~170Vの範囲内である
ことを特徴とする方法。 - 前記化合物は、SF6である
ことを特徴とする請求項9に記載の方法。 - 前記反応器(11)内の圧力は、3~15×106N/m2 (30~150バール)の範囲内である
ことを特徴とする請求項9に記載の方法。 - 前記反応器(11)内の反応性ガス(12)の流量は、3~20sccmの範囲内である
ことを特徴とする請求項9に記載の方法。 - 前記反応器(11)内の前記第1の基材(8)の官能化時間は、20~120分の範囲内である
ことを特徴とする請求項9に記載の方法。 - 前記反応性イオンエッチング装置(10)において、容量性プラズマ結合を行う
ことを特徴とする請求項9に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP21212556.1 | 2021-12-06 | ||
EP21212556.1A EP4191345A1 (fr) | 2021-12-06 | 2021-12-06 | Ensemble fonctionnel de micromecanique avec un revetement tribologique |
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JP2023084081A JP2023084081A (ja) | 2023-06-16 |
JP7378552B2 true JP7378552B2 (ja) | 2023-11-13 |
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US (1) | US20230173788A1 (ja) |
EP (1) | EP4191345A1 (ja) |
JP (1) | JP7378552B2 (ja) |
CN (1) | CN116224739A (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001520974A (ja) | 1997-10-27 | 2001-11-06 | アドバンスト・リフラクトリー・テクノロジーズ・インコーポレイテッド | 酸素プラズマによるcvdダイヤモンド被膜の研磨方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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FR2731715B1 (fr) * | 1995-03-17 | 1997-05-16 | Suisse Electronique Microtech | Piece de micro-mecanique et procede de realisation |
EP2631721A1 (fr) * | 2012-02-23 | 2013-08-28 | Richemont International S.A. | Composants horlogers en titane revêtus de diamant |
CH712308A1 (fr) * | 2016-03-30 | 2017-10-13 | Officine Panerai Ag | Système de barillet autolubrifié pour pièce d'horlogerie. |
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2021
- 2021-12-06 EP EP21212556.1A patent/EP4191345A1/fr active Pending
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2022
- 2022-07-28 US US17/815,626 patent/US20230173788A1/en not_active Abandoned
- 2022-08-15 JP JP2022129167A patent/JP7378552B2/ja active Active
- 2022-11-17 CN CN202211439543.4A patent/CN116224739A/zh active Pending
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JP2001520974A (ja) | 1997-10-27 | 2001-11-06 | アドバンスト・リフラクトリー・テクノロジーズ・インコーポレイテッド | 酸素プラズマによるcvdダイヤモンド被膜の研磨方法 |
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