JP7332642B2 - 低スペックルラインとして撮像可能である均一化された照明ラインの形成 - Google Patents
低スペックルラインとして撮像可能である均一化された照明ラインの形成 Download PDFInfo
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- JP7332642B2 JP7332642B2 JP2021020221A JP2021020221A JP7332642B2 JP 7332642 B2 JP7332642 B2 JP 7332642B2 JP 2021020221 A JP2021020221 A JP 2021020221A JP 2021020221 A JP2021020221 A JP 2021020221A JP 7332642 B2 JP7332642 B2 JP 7332642B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
- G01B11/254—Projection of a pattern, viewing through a pattern, e.g. moiré
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/48—Laser speckle optics
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/8901—Optical details; Scanning details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0215—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having a regular structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0273—Diffusing elements; Afocal elements characterized by the use
- G02B5/0278—Diffusing elements; Afocal elements characterized by the use used in transmission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/8901—Optical details; Scanning details
- G01N2021/8908—Strip illuminator, e.g. light tube
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Immunology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Textile Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Facsimile Scanning Arrangements (AREA)
- Optical Elements Other Than Lenses (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
を平均化する。スペックルパターンが第1スキャンパス231及び/又は第2スキャンパス221に沿っておよそ毎ミクロン動かされるに応じて変化し、すなわち、δx=1μmである。上述のパラメーターが次の式を満足することに留意されたい。
式(1)によれば、およそ1mmの移動ΔXは、例えば、相対的な動きの周波数f=20Hzで十分である。式(1)を用いて決定されるこれら及び他の例は、パターン毎の移動(travel-per-pattern)δx、相対的な動きの周波数、移動距離の様々な値について、表1に要約される。
Claims (10)
- コリメートされたレーザービームを放射するように構成されたレーザー;
ファンビーム生成器と、拡散方向を有する少なくとも一つの線形拡散器を備えるファン照明生成器にして、前記少なくとも一つの線形拡散器は、前記拡散方向に沿って表面粗さがランダム又は疑似ランダムに変化する表面を有し、当該ファン照明生成器が、
前記コリメートされたレーザービームを受け取り、
前記少なくとも一つの線形拡散器の最遠位のものに形成された光ラインから拡散光の2次元ファンが発出するように拡散光の2次元ファンを出射し、及び
前記拡散光の2次元ファンと対象物の交差箇所に照明ラインを形成させるように配置及び構成される、ファン照明生成器;及び
前記拡散光の2次元ファンに光軸が鋭角を成すように配置され、また非スペックル画像として照明ラインの画像を形成するように構成された画像取得装置を備える、システム。 - 前記ファンビーム生成器は、前記コリメートされたレーザービームを受け取り、前記拡散方向に平行に前記光ラインに沿って前記少なくとも1つの線形拡散器の線形拡散器に交差するファンビームを形成するように配置及び構成され、
前記線形拡散器は、前記光ラインに対応する光を透過して2次元ファンを形成する、請求項1に記載のシステム。 - 前記ファン照明生成器の前記少なくとも一つの線形拡散器が単一の線形拡散器である、請求項2に記載のシステム。
- 前記ファンビーム生成器は、シリンドリカルレンズ又はパウエルレンズの1つを含む、請求項2に記載のシステム。
- 前記ファンビーム生成器により形成されるファンビームの発散角がターゲット発散角よりも大きく、
前記ファンビーム生成器と前記線形拡散器の間の間隔(d)が所定間隔よりも大きく、前記線形拡散器上にファンビームにより形成される前記光ラインの長さ(Lx)がターゲット長さよりも大きいことを保証し、前記所定間隔は、ターゲット発散角とターゲット長さに比例する、請求項2に記載のシステム。 - 前記ファンビーム生成器に対する前記線形拡散器の周期的動きを生じさせるように構成されたドライバーを更に備え、前記周期的動きが前記線形拡散器の前記拡散方向に沿うものである、請求項2に記載のシステム。
- 前記ドライバーは、周期的動きの速度が所定速度未満である時、前記レーザーを非活性化するように構成され、前記所定速度が、露光期間に反比例する、請求項6に記載のシステム。
- 前記画像取得装置は、均一化ラインとして照明ラインの画像を形成するように構成される、請求項2又は3に記載のシステム。
- 前記少なくとも1つの線形拡散器は、前記表面に形成された円柱アレイを備え、当該円柱アレイは、各々の円柱素子が、隣接する円柱素子に関してランダム又は疑似ランダムに変化する半径、開口数、及び高さを有する複数の円柱素子を含む、請求項1に記載のシステム。
- 前記ファンビームが前記線形拡散器の第1側面に交差し、
前記2次元ファンが前記線形拡散器の第2側面から放射され、前記第2側面が前記第1側面の反対側である、請求項2に記載のシステム。
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JP2023130407A JP2023157935A (ja) | 2018-01-19 | 2023-08-09 | 低スペックルラインとして撮像可能である均一化された照明ラインの形成 |
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US201862619675P | 2018-01-19 | 2018-01-19 | |
US62/619,675 | 2018-01-19 | ||
US16/252,484 | 2019-01-18 | ||
US16/252,484 US11314100B2 (en) | 2018-01-19 | 2019-01-18 | Forming a homogenized illumination line which can be imaged as a low-speckle line |
JP2019007821A JP6839214B2 (ja) | 2018-01-19 | 2019-01-21 | 低スペックルラインとして撮像可能である均一化された照明ラインの形成 |
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JP2023130407A Pending JP2023157935A (ja) | 2018-01-19 | 2023-08-09 | 低スペックルラインとして撮像可能である均一化された照明ラインの形成 |
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JP (3) | JP6839214B2 (ja) |
KR (2) | KR102246353B1 (ja) |
CN (2) | CN110057318B (ja) |
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WO2021188867A1 (en) * | 2020-03-20 | 2021-09-23 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Speckle-reduced illumination for improved scattering-based microscopy |
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CN111536905B (zh) * | 2020-06-03 | 2021-08-31 | 北京航空航天大学 | 一种基于参考图像的单目光栅结构光视觉测量方法及系统 |
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WO2023164009A1 (en) | 2022-02-25 | 2023-08-31 | Cognex Corporation | Configurable light emission by selective beam-sweeping |
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- 2019-01-18 US US16/252,484 patent/US11314100B2/en active Active
- 2019-01-18 CN CN201910049286.5A patent/CN110057318B/zh active Active
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JP2019128355A (ja) | 2019-08-01 |
CN110057318B (zh) | 2021-12-14 |
CN110057318A (zh) | 2019-07-26 |
US11314100B2 (en) | 2022-04-26 |
JP6839214B2 (ja) | 2021-03-03 |
KR102246353B1 (ko) | 2021-04-29 |
US20190227336A1 (en) | 2019-07-25 |
JP2023157935A (ja) | 2023-10-26 |
KR20210049067A (ko) | 2021-05-04 |
KR102426317B1 (ko) | 2022-07-29 |
US11598973B2 (en) | 2023-03-07 |
KR20190088919A (ko) | 2019-07-29 |
US20220236580A1 (en) | 2022-07-28 |
CN114061490A (zh) | 2022-02-18 |
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JP2021096262A (ja) | 2021-06-24 |
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