JP7311639B2 - ビーム変換素子を備えた半導体部品およびビーム変換素子を製造するための方法 - Google Patents
ビーム変換素子を備えた半導体部品およびビーム変換素子を製造するための方法 Download PDFInfo
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- JP7311639B2 JP7311639B2 JP2021572268A JP2021572268A JP7311639B2 JP 7311639 B2 JP7311639 B2 JP 7311639B2 JP 2021572268 A JP2021572268 A JP 2021572268A JP 2021572268 A JP2021572268 A JP 2021572268A JP 7311639 B2 JP7311639 B2 JP 7311639B2
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- 239000000758 substrate Substances 0.000 claims description 68
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- 230000001131 transforming effect Effects 0.000 claims description 29
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- 230000003595 spectral effect Effects 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 14
- 239000010409 thin film Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
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- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Description
10 前面
2 半導体チップ
20 活性領域
200 ビーム出射面
21 第1の半導体層
22 第2の半導体層
25 ミラー層
26 接続層
27 側面
29 支持体
3 ビーム変換素子
30 量子構造部
300 半導体積層体
31 量子層
32 バリア層
35 基板
351 分離部分
37 犠牲層
38 分離核
39 凹部
4 接着層
45 接点
46 さらなる接点
5 一次ビーム
51 励起
6 二次ビーム
901 特性曲線
9011 極大値
9012 極大値
902 特性曲線
9021 極大値
9022 極大値
9023 極大値
905 直線
906 直線
907 直線
908 矢印
910 特性曲線
920 特性曲線
990 窒化物半導体の材料系
Claims (15)
- 半導体チップ(2)と、該半導体チップ上に配置されたビーム変換素子(3)とを備えた半導体部品(1)であって、
前記半導体チップは、ピーク波長を有する一次ビーム(5)を生成するために設けられた活性領域(20)を有し、
前記ビーム変換素子は、量子構造部(30)を有し、
前記量子構造部は、バリア層(32)によって相互に分離された複数の量子層(31)を有し、
前記一次ビームの前記ピーク波長は、赤外線スペクトル範囲内にあり、
前記量子構造部は、前記一次ビームを少なくとも部分的に二次ビーム(6)に変換し、前記二次ビームの発光極大値の発光波長は、1000nm以上1700nm以下の範囲であり、前記ピーク波長よりも大きい、半導体部品(1)。 - 前記バリア層(32)は、前記ピーク波長を有する前記一次ビームのエネルギーよりも大きいバンドギャップを有する、請求項1記載の半導体部品。
- 前記量子構造部は、前記量子構造部のバンドギャップに関して相互に異なる少なくとも2つの量子層を有する、請求項1または2記載の半導体部品。
- 前記量子構造部は、InPの格子定数を有する、請求項1から3までのいずれか1項記載の半導体部品。
- 前記量子構造部は、以下の材料系のグループ、すなわち、Gax In1-x Asy P1-y、Inx Ga1-x Asy Sb1-y、Inx Ga1-x As、Inx Ga1-x Py Sb1-y、Inx Al1-x Py Sb1-yからの少なくとも1つの材料を有し、ただし、前記xおよび前記yは、それぞれ、前記材料の格子定数がInPの格子定数に対応するように選択される、請求項1から4までのいずれか1項記載の半導体部品。
- 前記ビーム変換素子は、前記半導体部品の平面図で見て、前記半導体チップの前記活性領域の最大80%を覆っている、請求項1から5までのいずれか1項記載の半導体部品。
- 前記ビーム変換素子は、前記半導体部品の平面図で見て、前記半導体チップの前記活性領域の少なくとも90%を覆っている、請求項1から5までのいずれか1項記載の半導体部品。
- 前記ビーム変換素子は、最大200μmの厚さを有する、請求項1から7までのいずれか1項記載の半導体部品。
- 前記半導体チップは、支持体(29)を有し、前記活性領域と前記支持体との間にミラー層(25)が配置されている、請求項1から8までのいずれか1項記載の半導体部品。
- 請求項1から9までのいずれか1項記載の半導体部品を製造するための方法であって、
a)量子構造部(30)を有する半導体積層体(300)を、基板(35)上に堆積させるステップと、
b)前記半導体積層体を、複数のビーム変換素子(3)に個別化するステップと、
c)個別化された前記ビーム変換素子(3)を、接着剤(4)を用いて前記半導体チップ(2)上に取り付けるステップとを含む、方法。 - 前記基板を、少なくとも部分的に前記量子構造部から除去する、請求項10記載の方法。
- 前記量子構造部(30)と前記基板(35)の堆積面との間に位置する犠牲層(37)が除去される、請求項11記載の方法。
- 分離核(38)が前記基板に導入され、前記分離核に沿って前記基板の一部が分離される、請求項11記載の方法。
- 前記基板の少なくとも一部は、前記方法のさらなる製造サイクルにおいて前記ステップa)のために再利用される、請求項10から13までのいずれか1項記載の方法。
- 前記基板は、前記ステップb)の前に薄膜化される、請求項10から13までのいずれか1項記載の方法。
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DE102019115351.4 | 2019-06-06 | ||
DE102019115351.4A DE102019115351A1 (de) | 2019-06-06 | 2019-06-06 | Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen |
PCT/EP2020/064398 WO2020244949A1 (de) | 2019-06-06 | 2020-05-25 | Halbleiterbauelement mit strahlungskonversionselement und verfahren zum herstellen von strahlungskonversionselementen |
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JP7311639B2 true JP7311639B2 (ja) | 2023-07-19 |
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JP (1) | JP7311639B2 (ja) |
CN (1) | CN113939921A (ja) |
DE (1) | DE102019115351A1 (ja) |
WO (1) | WO2020244949A1 (ja) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173977A (ja) | 2001-12-07 | 2003-06-20 | Sumitomo Chem Co Ltd | 化合物半導体の製造方法 |
JP2007506635A (ja) | 2003-09-26 | 2007-03-22 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック(セーエヌエールエス) | 犠牲層上のヘテロエピタキシによるiii族窒化物の自立基板の実現方法 |
JP2008078563A (ja) | 2006-09-25 | 2008-04-03 | Eudyna Devices Inc | 発光素子およびその製造方法 |
JP2008263015A (ja) | 2007-04-11 | 2008-10-30 | Hitachi Cable Ltd | 半導体発光素子 |
JP2010098194A (ja) | 2008-10-17 | 2010-04-30 | Meijo Univ | 蛍光体、発光素子、発光装置及び蛍光体の製造方法 |
JP2010238834A (ja) | 2009-03-31 | 2010-10-21 | Ube Ind Ltd | 発光ダイオード用基板の製造方法 |
JP2013539229A (ja) | 2010-09-29 | 2013-10-17 | コーニンクレッカ フィリップス エヌ ヴェ | 波長変換型発光デバイス |
JP2017524984A (ja) | 2014-07-28 | 2017-08-31 | オスラム・シルバニア・インコーポレイテッド | ソリッドステート照明用途向けの波長変換器を製造する方法 |
US20180166854A1 (en) | 2015-06-04 | 2018-06-14 | Osram Opto Semiconductors Gmbh | Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020140012A1 (en) * | 2001-03-30 | 2002-10-03 | Motorola, Inc. | Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same |
JP2006108350A (ja) * | 2004-10-05 | 2006-04-20 | Stanley Electric Co Ltd | 半導体発光素子 |
JP4699764B2 (ja) * | 2005-01-05 | 2011-06-15 | スタンレー電気株式会社 | 半導体発光素子 |
DE102006035627A1 (de) * | 2006-07-31 | 2008-02-07 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper |
KR20100077191A (ko) * | 2007-10-08 | 2010-07-07 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 접합된 반도체 파장 변환기를 갖는 발광 다이오드 |
EP2232596A4 (en) * | 2007-12-28 | 2011-03-02 | 3M Innovative Properties Co | LIGHT SOURCE SUBJECT TO DOWN CONVERSION WITH UNIFORM WAVE LENGTH EMISSION |
US9024292B2 (en) * | 2012-06-02 | 2015-05-05 | Xiaohang Li | Monolithic semiconductor light emitting devices and methods of making the same |
KR102008349B1 (ko) * | 2013-03-13 | 2019-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
DE102013112740B4 (de) * | 2013-11-19 | 2021-03-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauelement |
DE102016117189A1 (de) * | 2016-09-13 | 2018-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
KR20180076497A (ko) * | 2016-12-28 | 2018-07-06 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 구비한 반도체 소자 패키지 |
KR102384731B1 (ko) * | 2017-10-17 | 2022-04-08 | 삼성전자주식회사 | Led 장치 및 그 제조 방법 |
DE102017124559B4 (de) * | 2017-10-20 | 2024-05-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements |
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- 2020-05-25 CN CN202080041872.6A patent/CN113939921A/zh active Pending
- 2020-05-25 US US17/616,530 patent/US20220254965A1/en active Pending
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173977A (ja) | 2001-12-07 | 2003-06-20 | Sumitomo Chem Co Ltd | 化合物半導体の製造方法 |
JP2007506635A (ja) | 2003-09-26 | 2007-03-22 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック(セーエヌエールエス) | 犠牲層上のヘテロエピタキシによるiii族窒化物の自立基板の実現方法 |
JP2008078563A (ja) | 2006-09-25 | 2008-04-03 | Eudyna Devices Inc | 発光素子およびその製造方法 |
JP2008263015A (ja) | 2007-04-11 | 2008-10-30 | Hitachi Cable Ltd | 半導体発光素子 |
JP2010098194A (ja) | 2008-10-17 | 2010-04-30 | Meijo Univ | 蛍光体、発光素子、発光装置及び蛍光体の製造方法 |
JP2010238834A (ja) | 2009-03-31 | 2010-10-21 | Ube Ind Ltd | 発光ダイオード用基板の製造方法 |
JP2013539229A (ja) | 2010-09-29 | 2013-10-17 | コーニンクレッカ フィリップス エヌ ヴェ | 波長変換型発光デバイス |
JP2017524984A (ja) | 2014-07-28 | 2017-08-31 | オスラム・シルバニア・インコーポレイテッド | ソリッドステート照明用途向けの波長変換器を製造する方法 |
US20180166854A1 (en) | 2015-06-04 | 2018-06-14 | Osram Opto Semiconductors Gmbh | Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device |
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CN113939921A (zh) | 2022-01-14 |
WO2020244949A1 (de) | 2020-12-10 |
JP2022536292A (ja) | 2022-08-15 |
DE102019115351A1 (de) | 2020-12-10 |
US20220254965A1 (en) | 2022-08-11 |
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