JP7295408B2 - Method for manufacturing light emitting device - Google Patents

Description

Embodiments relate to a method for manufacturing a light-emitting device.

Patent Literature 1 discloses a side emission type light emitting device.

JP 2019-036713 A

However, since the light emitting device of Patent Document 1 has the lower housing portion on the rear side, the thickness between the light emitting surface and the rear surface tends to be large.

An object of the embodiments is to provide a method for manufacturing a compact light-emitting device.

A method for manufacturing a light-emitting device according to an embodiment includes a substrate having at least a pair of conductive members on a first surface, a semiconductor laminate, and a pair of element electrodes connected to the lower surface side of the semiconductor laminate. in a direction perpendicular to and passing through both of the pair of device electrodes, the device electrode has a narrow portion connected to the lower surface side of the semiconductor laminate, and a narrow portion located below the narrow portion. a light emitting element having a wide portion having a first lower surface and having a width in a direction from the electrode toward the other element electrode, the wide portion having a first lower surface; preparing an intermediate structure in which a light emitting element is arranged on a pair of conductive members via a bonding member in a direction facing the first surface; and exposing a second lower surface of the element electrode having a width narrower than the width of the first lower surface by removing.

According to the embodiment, it is possible to realize a method for manufacturing a small light-emitting device.

1 is an end view showing a light emitting device according to an embodiment; FIG. It is the figure which looked at the light-emitting device shown in FIG. 1 from the direction A. FIG. It is the figure which looked at the light-emitting device shown in FIG. 1 from the direction B. FIG. It is the figure which looked at the light-emitting device shown in FIG. 1 from the direction C. FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 3B is an end view taken along line 3B-3B shown in FIG. 3A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 4B is an end view taken along line 4B-4B shown in FIG. 4A; FIG. 1 is a cross-sectional view showing a light emitting device; FIG. It is sectional drawing which shows an example of the manufacturing method of a light emitting element. It is sectional drawing which shows an example of the manufacturing method of a light emitting element. It is sectional drawing which shows an example of the manufacturing method of a light emitting element. It is sectional drawing which shows an example of the manufacturing method of a light emitting element. It is an end elevation which shows the modification of a light emitting element. It is an end elevation which shows the modification of a light emitting element. It is an end elevation which shows the modification of a light emitting element. 1 is a cross-sectional view showing a light emitting device; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 5B is an end view taken along line 5B-5B shown in FIG. 5A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 6B is an end view taken along line 6B-6B shown in FIG. 6A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 7B is an end view taken along line 7B-7B shown in FIG. 7A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 8B is an end view taken along line 8B-8B shown in FIG. 8A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 9B is an end view through line 9B-9B shown in FIG. 9A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 10B is an end view taken along line 10B-10B shown in FIG. 10A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 11B is an end view through line 11B-11B shown in FIG. 11A; FIG. It is a top view which shows the manufacturing method of the light-emitting device which concerns on embodiment. 12B is an end view through line 12B-12B shown in FIG. 12A; FIG.

In the following description, the configuration of the light-emitting device after manufacture will be described first, and then the method for manufacturing the light-emitting device will be described.
Also, each drawing referred to below is schematic, and constituent elements are appropriately emphasized or omitted. Also, the dimensional ratios of the constituent elements do not necessarily match between the drawings.

(light emitting device)
FIG. 1 is an end view showing a light emitting device 1 according to this embodiment.
2A is a view of the light emitting device 1 shown in FIG. 1 as seen from direction A, FIG. 2B is a view of the light emitting device 1 shown in FIG. 1 as seen from direction B, and FIG. 2C is a view of the light emitting device 1 shown in FIG. is viewed from direction C. FIG.

A light emitting device 1 according to this embodiment includes a light emitting element 10 having a semiconductor laminate 11 and a pair of element electrodes 12 a and 12 b connected to the lower surface side of the semiconductor laminate 11 . The light-emitting device 1 shown in FIGS. 1 and 2A to 2C further includes a translucent member 14 provided on the light-emitting element 10. As shown in FIG. The light-emitting element 10 and the translucent member 14 are referred to as a laminate 20 . The light emitting device 1 also includes a light reflecting member 21 covering the side surface of the laminate 20, and a pair of conductive layers 25a and 25b located on the lower surface 40a of the light emitting device 1 and connected to the pair of element electrodes 12a and 12b, respectively. Prepare.

The light emitting device 1 has a bottom surface 40a, a top surface (light emitting surface) 40b located on the opposite side of the bottom surface 40a, and four side surfaces (a first side surface 40c and a second side surface 40d) located between the bottom surface 40a and the top surface 40b. , a third side 40e and a fourth side 40f). The four side surfaces (first side surface 40c, second side surface 40d, third side surface 40e, and fourth side surface 40f) are entirely formed of the light reflecting member 21 . The shape of the light emitting device 1 is, for example, a substantially rectangular parallelepiped.

The light emitting device 1 may be a top emission type (top view type) light emitting device or a side emission type (side view type) light emitting device. When the light-emitting device 1 is a top-view type light-emitting device, the light-emitting device 1 is mounted such that the lower surface 40a faces the secondary mounting substrate. When the light-emitting device 1 is a side-emission type (side-view type) light-emitting device, for example, the pair of conductive layers 25a and 25b are partially arranged to extend over the lower surface (rear surface) 40a and the first side surface (mounting surface) 40c. , and the light emitting device 1 is mounted so that the first side surface 40c faces the secondary mounting substrate. In FIG. 1 and the like, a top emission type light emitting device is taken as an example for explanation.

The light emitting element 10 is, for example, a light emitting diode (LED) and functions as a light source of the light emitting device 1 . The light emitting device 10 has a semiconductor laminate 11 and a pair of device electrodes 12a and 12b. In the semiconductor laminate 11, an n-layer, a light-emitting layer, and a p-layer are laminated. One of the n-layer and the p-layer is connected to the device electrode 12a, and the other is connected to the device electrode 12b. The pair of device electrodes 12 a and 12 b are exposed from the light reflecting member 21 on the lower surface 40 a of the light emitting device 1 . Thereby, the heat generated by the light emitting element 10 can be efficiently radiated from the lower surface 40 a of the light emitting device 1 . In FIG. 1, the lower surface 40a is flat, and the light reflecting member 21 is provided around the pair of device electrodes 12a and 12b.

A translucent member 14 is provided on the light emitting element 10 . By disposing the translucent member 14 on the light emitting element 10, the light emitting element 10 can be protected from external stress. Side surfaces of the translucent member 14 are preferably covered with the light reflecting member 21 . As a result, the contrast between the light-emitting region and the non-light-emitting region is increased, and the light-emitting device can have a clear view. In FIG. 1, the upper surface 40b, which is the light emitting surface, is flat, and the light reflecting member 21 is provided around the translucent member 14. As shown in FIG.

The translucent member 14 may include a phosphor layer 15 or a translucent layer 16 . The translucent member 14 may include both the phosphor layer 15 and the translucent layer 16 . Further, the phosphor layer 15 may be a single phosphor layer, two layers of the phosphor layer 15a and the phosphor layer 15b, or three or more phosphor layers. . The phosphor may be uniformly dispersed in the phosphor layer 15 , or the phosphor may be unevenly distributed on the light emitting element 10 side of the upper surface of the phosphor layer 15 . By unevenly distributing the phosphor closer to the light emitting element 10 than the upper surface of the phosphor layer 15, it is possible to easily suppress deterioration of the phosphor, which is sensitive to moisture, due to moisture. Examples of phosphors that are sensitive to moisture include manganese-activated fluoride-based phosphors. Manganese-activated fluoride-based phosphors can emit light with a relatively narrow spectral line width, so when incorporated into a liquid crystal backlight device, for example, the light after passing through a color filter tends to be light with high color purity. As a result, the color reproducibility of the entire liquid crystal backlight device is improved. The phosphor may be one type of phosphor, or may be a plurality of types of phosphors.

In FIG. 1, the translucent member 14 has a phosphor layer 15a, a phosphor layer 15b, and a translucent layer 16 laminated in this order. In each of the phosphor layers 15a and 15b, a phosphor is contained in a base material made of a transparent material. As a result, the light emitting device 1 mixes the light output from the light emitting element 10, the light emitted by the phosphor in the phosphor layer 15a, and the light emitted by the phosphor in the phosphor layer 15b to obtain a desired color. It can output mixed color light. In one example, the light emitting element 10 outputs blue light, the phosphor layer 15a emits green light, the phosphor layer 15b emits red light, and the light emitting device 1 as a whole outputs white light. . For example, the phosphor layer 15a contains a β-sialon phosphor, and the phosphor layer 15b contains a manganese-activated fluoride phosphor. The translucent layer 16 is made of a transparent material and does not substantially contain phosphor. In the present specification, "substantially free of" means that unavoidable contamination is allowed.

Laminate 20 includes light-emitting element 10 and translucent member 14 disposed on light-emitting element 10 . Moreover, the laminate 20 may further include a light guide member 13 positioned between the light emitting element 10 and the translucent member 14 . The light guide member 13 covers the side surface of the light emitting element 10 and guides the light emitted from the side surface of the light emitting element 10 toward the upper surface of the light emitting device 1 (upper surface 40b as a light emitting surface). By arranging the light guide member 13 on the side surface of the light emitting element 10 , it is possible to suppress part of the light reaching the side surface of the light emitting element 10 from being reflected by the side surface and attenuating within the light emitting element 10 . The light guide member 13 can cover the top and side surfaces of the light emitting element 10 . Thereby, the adhesion strength between the light emitting element 10 and the light guide member 13 can be improved.

The light guide member 13 is, for example, a member containing a resin material as a base material. As the resin material, translucent resins such as silicone resins, silicone-modified resins, epoxy resins, and phenol resins can be suitably used. In addition, it is preferable that the light guide member 13 has a high light transmittance. Therefore, it is preferable that the light guide member 13 does not have a substance that reflects, absorbs, or scatters light. For the light guide member 13, a member having a higher transmittance of light from the light emitting element 10 than the light reflecting member 21 is selected.

The light reflecting member 21 constitutes the outer surface of the light emitting device 1 . In the light-emitting device 1 shown in FIGS. 1 and 2A to 2C, the light reflecting member 21 is arranged outside any one of the lower surface 40a, the upper surface 40b, the first side surface 40c, the second side surface 40d, the third side surface 40e, and the fourth side surface 40f. It is also located on the surface. Also, the light reflecting member 21 covers the side surface of the light emitting element 10 and the side surface of the translucent member 14 . Since the light reflecting member 21 is positioned on the side of the light emitting element 10, the light emitted to the side of the light emitting element 10 can be reflected by the light reflecting member 21, and the light can be efficiently extracted upward. can be done. It is preferable that the light reflecting member 21 also partially cover the lower surface of the light emitting element 10 . Thereby, for example, the light emitted downward from the light emitting element 10 can be reflected upward. In addition, since the light reflecting member 21 covers the lower surface of the light emitting element 10, the adhesion strength between the light emitting element 10 and the light reflecting member 21 can be improved.

As shown in FIGS. 2B and 2C, the first side surface 40c, the second side surface 40d, the third side surface 40e, and the fourth side surface 40f have an upper portion 21a and a lower portion 21b each made of the light reflecting member 21. As shown in FIGS. The upper portion 21a is located on the upper surface (light emitting surface) 40b side, and the lower portion 21b is located on the lower surface 40a side. The lower portion 21b is recessed inside (toward the center of the light emitting device 1) of the upper portion 21a to form a recess 22. As shown in FIG. Since the light-emitting device 1 has the recessed portion 22, even if the amount of the bonding member is excessive when the light-emitting device 1 is arranged on the mounting substrate through the bonding member, the surplus portion of the bonding member can be absorbed into the recessed portion. 22. This can reduce the possibility that the light emitting device 1 is arranged with the upper surface (light emitting surface) 40b of the light emitting device 1 being inclined.

The thermal expansion coefficient difference between the light guide member 13 and the light emitting element 10 (this is referred to as “first thermal expansion coefficient difference ΔT30”) and the thermal expansion coefficient difference between the light reflecting member 21 and the light emitting element 10 (this is referred to as “ It is preferable to select the material of the light reflecting member 21 so that, for example, ΔT40<ΔT30 when compared with a second thermal expansion coefficient difference ΔT40″. This can prevent the light guide member 13 from peeling off from the light emitting element 10 .

The light emitting device 1 can further comprise a pair of conductive layers 25a, 25b located on the lower surface 40a. The pair of conductive layers 25 a and 25 b function as external electrodes of the light emitting device 1 . The pair of conductive layers 25a and 25b are electrically connected to the pair of device electrodes 12a and 12b. A pair of conductive layers 25a and 25b are separated from each other. The pair of conductive layers 25a and 25b are made of a conductive material, for example, a sputtered film containing gold or the like. The planar area of each conductive layer is preferably larger than the planar area of each device electrode of the light emitting device 10 . Accordingly, when mounting the light emitting device 1 on the substrate 100, the bonding area between the light emitting device 1 and the substrate 100 can be increased, and the bonding strength between the light emitting device 1 and the substrate 100 can be improved.

(Method for manufacturing light-emitting device)
Next, a method for manufacturing the light emitting device 1 according to this embodiment will be described. The method for manufacturing the light-emitting device 1 according to the present embodiment includes (I) a step of preparing an intermediate structure 23 having a substrate 100 and a light-emitting element 10; and a removing step of removing part of the pair of device electrodes 12a and 12b.
3A to 12B are diagrams showing the manufacturing method of the light emitting device according to this embodiment. 3A, 4A, 5A, . . . , 12A are plan views, and FIGS. 3B, 4B, 5B, .

[(I) Step of preparing an intermediate structure]
First, an intermediate structure 23 having a substrate 100 having at least a pair of conductive members 100a and 100b on a first surface 101 and a light emitting element 10 arranged on the pair of conductive members 100a and 100b via a bonding member 103 is prepared. prepare. The light emitting element 10 includes a semiconductor laminate 11 and a pair of element electrodes 12 a and 12 b connected to the lower surface 11 a side of the semiconductor laminate 11 . An example of the intermediate structure 23 is shown in FIGS. 10A and 10B. The intermediate structure 23 shown in FIGS. 10A and 10B further has a translucent member 14 and a light reflecting member 21, and a plurality of laminates 20 are arranged in the first direction (X direction) within the light reflecting member 21. ing. The step of preparing the intermediate structural body 23 may be prepared by manufacturing the intermediate structural body 23 according to an example of the manufacturing process described below, or may be prepared by purchasing the intermediate structural body 23 manufactured in advance.

An example of manufacturing and preparing the intermediate structure 23 will now be described in order.

First, as shown in FIGS. 3A and 3B, a substrate 100 is prepared. A base material of the substrate 100 is, for example, insulating, and has a pair of conductive members 100 a and 100 b on the first surface 101 . The substrate 100 may have multiple pairs of conductive members. The pair of conductive members 100a and 100b can have a convex portion 8 on the upper surface. The convex portion 8 is positioned to face a pair of element electrodes 12a and 12b of the light emitting element 10, which will be described later. The planar shape of the upper surface of the projection 8 is preferably substantially the same as the planar shape of the corresponding pair of device electrodes 12 a and 12 b of the light emitting device 10 . As a result, when the light emitting element 10 is arranged on the pair of protrusions 8 via the bonding member 103, self-alignment works effectively on the light emitting element 10, and the mounting accuracy of the light emitting element 10 can be improved. For example, the planar shape of the projection 8 and the device electrodes 12a and 12b of the light emitting device 10 is such that corresponding sides have approximately the same length (error is ±10% or less, preferably ±3% or less). can be a rectangular shape.

The substrate 100 is removed in a removing step, which will be described later. The maximum thickness of the substrate 100 is, for example, 100 μm or more and 500 μm or less, preferably 200 μm or more and 300 μm or less. This makes it possible to facilitate the removal process of the substrate 100 while maintaining the strength of the substrate 100 . Glass fiber reinforced resin, for example, can be used as the base material of the substrate 100 . The glass fiber contained in the base material is, for example, 30% to 70% by weight, preferably 40% to 60% by weight. Accordingly, the step of removing the substrate 100 can be easily performed.

In this specification, an XYZ orthogonal coordinate system is adopted for convenience of explanation. The direction from the pair of conductive members 100a and 100b to the adjacent pair of conductive members 100a and 100b is defined as the "X direction" (first direction), and the direction from the conductive member 100a to the conductive member 100b is defined as the "Y direction" (second direction). A direction perpendicular to the X direction and the Y direction, that is, a direction perpendicular to the upper surface (light exit surface) 40b is referred to as a "Z direction" (third direction).

The substrate 100 preferably has a recognition target portion 102 on the first surface 101 . The recognition target portion 102 is a mark for grasping the position of the pair of conductive members 100a and 100b and the position of forming a groove, which will be described later. The recognition target part 102 is, for example, a mark made of a conductive material. The recognition target portion 102 can have a shape of a convex portion, a concave portion, or a combination of a convex portion and a concave portion. The positions and number of recognition target parts 102 are arbitrary, but they are arranged in positions where they will not be covered by the light reflecting member 21 in a later process.

The recognition target portion 102 can be formed at the same time as the step of forming the pair of conductive members 100a and 100b. By forming the recognition target portion 102 at the same time as the step of forming the pair of conductive members 100a and 100b, the light emitting element 10 can be arranged on the pair of conductive members 100a and 100b using the recognition target portion 102 as a mark. This improves the positional accuracy of the light emitting element 10 .

Next, as shown in FIGS. 4A and 4B, a joining member 103 is provided on the pair of conductive members 100a and 100b. The joining member 103 is solder, for example. When the pair of conductive members 100 a and 100 b has the convex portion 8 , the joining member 103 is provided on the convex portion 8 . After that, the light emitting element 10 is mounted on the substrate 100 with the recognition target portion 102 as a reference. The light emitting element 10 is mounted such that the lower surfaces of the pair of element electrodes 12a and 12b and the upper surfaces of the pair of conductive members 100a and 100b of the substrate 100 are opposed to each other.

FIG. 4C is a cross-sectional view showing the light emitting device 10 used in this embodiment. The light emitting element 10 includes a semiconductor laminate 11 and a pair of element electrodes 12 a and 12 b connected to the lower surface 11 a side of the semiconductor laminate 11 . Moreover, the semiconductor laminate 11 can further include a growth substrate such as sapphire or a semiconductor substrate on the upper surface side.

As shown in FIG. 4C, the device electrodes 12a and 12b are connected to the lower surface 11a side of the semiconductor laminate 11 in a cross section passing through both the pair of device electrodes 12a and 12b in a direction perpendicular to the lower surface 11a. A narrow width portion 5 and a wide width portion positioned below the narrow width portion 5 and having a width in the direction from one element electrode 12a to the other element electrode 12b that is wider than the width of the narrow width portion 5 and having a first lower surface 7a. a part 6; The light emitting element 10 is arranged such that the first lower surface 7a of the wide portion 6 faces the first surface 101 of the substrate 100, and is arranged on the pair of conductive members 100a, 100a of the substrate 100 with the bonding member 103 interposed therebetween. . The device electrodes 12 a and 12 b can further include a pad portion 9 located between the semiconductor laminate 11 and the narrow portion 5 in addition to the narrow portion 5 and the wide portion 6 . The narrow portion 5 and the wide portion 6 may be made of the same member, and for example, it is preferable to use copper with high heat dissipation. A material different from that of the narrow portion 5 and the wide portion 6 may be used for the pad portion 9. For example, it is preferable to use corrosion-resistant gold.

Since the light emitting element 10 has the wide portion 6 and the wide portion 6 side is used as the mounting surface, the contact area between the element electrodes 12a and 12b of the light emitting element 10 and the bonding member 103 increases. This improves the bonding strength between the light emitting element 10 and the substrate 100 . As shown in FIG. 4B, the joining member 103 preferably covers a part of the side surface of the narrow portion 5 in addition to the side surface of the wide portion 6 . In other words, it is preferable that the highest position of the joint member 103 is positioned between the uppermost end and the lowermost end of the narrow portion 5 and that a portion of the joint member 103 is in contact with the narrow portion 5 . This increases the area where the bonding member 103 is in contact with the device electrodes 12a and 12b. Further, as shown in FIG. 4B , part of the joining member 103 wraps around and joins to the upper surface of the wide portion 6, so that the wide portion 6 serves as an anchor. Thereby, the bonding strength between the element electrodes 12a and 12b and the bonding member can be improved.

Each of the narrow portion 5 and the wide portion 6 shown in FIG. 4C has a rectangular parallelepiped shape. The narrow portion 5 and the wide portion 6 can be formed by plating, for example. Electroplating is preferably used. Specifically, as shown in FIG. 4D, a light emitting element 10 having a pad portion 9 is prepared. Next, as shown in FIG. 4E, the narrow portion 5 is formed. In this step, first, a first resist R1 is formed on the pad portion 9 of the light emitting element 10. Next, as shown in FIG. For example, after providing a mask on the upper surface of the first portion p1 of the pad section 9, the first resist R1 is arranged so as to cover the upper surface of the pad section 9. FIG. As a result, the upper surface of the first portion p1 is exposed from the first resist R1. For example, the first resist R1 covers the side surfaces of the pad section 9 . Then, the narrow portion 5 is formed in the first portion p1. The width of the narrow portion 5 in the X direction and the Y direction is, for example, 50 μm to 300 μm, preferably 100 μm to 200 μm. The height of the narrow portion 5 in the Z direction is, for example, 10 μm to 100 μm, preferably 10 μm to 40 μm.

Next, as shown in FIG. 4F, the wide portion 6 is formed. In this step, first, a second resist R2 is formed on the first resist R1. For example, after providing a mask on the upper surface of the second portion p2 on the pad portion 9, the second resist R2 is arranged so as to cover the side surface of the narrow portion 5. As shown in FIG. Then, the wide portion 6 is formed in the second portion p2. The wide portion 6 is formed such that one of the widths in the X direction and the Y direction of the wide portion 6 is wider than the width of the corresponding narrow portion 5 . The width of the wide portion 6 in the X direction and the Y direction is, for example, 50 μm to 300 μm, preferably 100 μm to 200 μm. The height of the wide portion 6 in the Z direction is, for example, 10 μm to 100 μm, preferably 100 μm to 200 μm. Note that the second resist R2 may be laminated on the first resist R1. Next, as shown in FIG. 4G, the second resist R2 is removed. Thereby, the narrow portion 5 and the wide portion 6 are formed.

As another method of forming the wide portion 6, after forming the narrow portion 5 shown in FIG. The wide portion 6 may be formed by depositing a metal material also on the first resist R1 so that the wide portion 6 is exposed. Since the step of arranging the second resist R2 can be omitted, the steps can be simplified. As another method, the first resist R1 is removed after forming the narrow portion 5 shown in FIG. 4E. After that, as shown in FIG. 4H, the second resist R2 is arranged such that a part of the narrow portion 5 is located above the upper surface of the second resist R2. After that, the wide portion 6 is formed by electrolytic plating, for example. According to this method, the wide portion 6 covers not only the upper surface of the narrow portion 5 but also part of the side surface of the narrow portion 5, so that the bonding strength between the narrow portion 5 and the wide portion 6 is improved.

The shape of the device electrodes 12a and 12b is such that a surface (second lower surface 7b) having a width narrower than the width of the first lower surface 7a is exposed in a removal step of removing a part of the device electrodes 12a and 12b, which will be described later. It can have various shapes as far as possible. Specifically, in the removing step of partially removing the device electrodes 12a and 12b, the device electrodes 12a and 12b are partially removed from the first lower surface 7a side of the device electrodes 12a and 12b. As a result, new surfaces of the element electrodes 12a and 12b (second lower surface 7b) are exposed. The newly formed second lower surface 7b has a width narrower than the width of the first lower surface 7a. Alternatively, the planar area of the second lower surface 7b is smaller than the planar area of the first lower surface 7a. FIGS. 4I and 4J show other shapes of such device electrodes 12a and 12b. Device electrodes 12a and 12b shown in FIG. The intermediate portion M is narrower than the narrow portion 5 and the wide portion 6 . Since the device electrodes 12a and 12b are provided with the intermediate portion M, the bonding member 103 can be easily retained in the recess D formed by the lower surface of the narrow portion 5, the side surface of the intermediate portion M, and the upper surface of the wide portion 6. It is possible to control the creeping up of the joining member 103 on the side surfaces of 12a and 12b. The device electrodes 12a and 12b shown in FIG. 4J have a shape in which the width of the device electrodes 12a and 12b narrows from the first lower surface 7a toward the upper surface in cross-sectional view. In the device electrodes 12a and 12b shown in FIG. 4J, with the central portion in the height direction of the device electrodes 12a and 12b excluding the pad portion 9 as a reference, the upper side is the narrow portion 5 and the lower side is the wide portion 6. be able to.

Further, as shown in FIG. 4K, when the device electrodes 12a and 12b are provided with the pad portions 9, the geometric center M1 of the narrow width portion 5 should be located outside the geometric center M2 of the pad portions 9 in a cross-sectional view. is preferred. This makes it easier to secure a long distance between the element electrodes 12a and 12b. As a result, it is possible to suppress unintentional contact between the joining member 103 joining the device electrode 12a and the joining member 103 joining the device electrode 12b.

Next, as shown in FIGS. 5A and 5B, translucent member 14 is prepared. The translucent member 14 is preferably a member in which a phosphor layer 15 (a phosphor layer 15a and/or a phosphor layer 15b) and a translucent layer 16 are laminated, as shown in FIG. 5B. The phosphor layer 15a and the phosphor layer 15b contain a phosphor, and the translucent layer 16 does not substantially contain a phosphor.

Next, the adhesive layer 13 is placed on the upper surface of the light emitting element 10 to bond the light emitting element 10 and the translucent member 14 together. When the translucent member 14 has the phosphor layer 15 and the translucent layer 16, for example, the translucent member 14 is adhered on the upper surface of the light emitting element 10 in such a direction that the phosphor layer 15 and the adhesive layer 13 are in contact with each other. be. The adhesive layer 13 to which the translucent member 14 is adhered (hereinafter referred to as light guide member 13 ) preferably covers the side surfaces of the light emitting element 10 in addition to the upper surface of the light emitting element 10 . Thereby, the adhesive force between the translucent member 14 and the light emitting element 10 can be improved.

6A and 6B show the state after placing the translucent member 14 on the light emitting element 10. FIG. After placing the translucent member 14 on the light emitting element 10, it is preferable to selectively remove the side portions of the translucent member 14 with the recognition target portion 102 as a reference. When the translucent member 14 is arranged on the light emitting element 10 , the translucent member 14 may slide sideways due to the surface tension of the adhesive layer 13 and deviate from the designed position. In such a case, by trimming the side portion of the translucent member 14 with the recognition target portion 102 as a reference, the translucent member 14 can be reshaped in a desired region. When the trimming process of the translucent member 14 is performed, it is preferable to prepare in advance the translucent member 14 having a planar shape larger than a desired planar shape in the step of preparing the translucent member 14 . For example, in the step of preparing the translucent member 14, the translucent member 14 having a plane area of 105% or more and 125% or less of the desired plane area of the translucent member 14 is prepared, preferably A translucent member 14 having a plane area of 105% or more and 110% or less is prepared. In the trimming process of the translucent member 14, the translucent member 14 having a desired shape can be formed. In addition, through this process, variations in size or shape of the translucent members 14 arranged on the plurality of light emitting elements 10 can be suppressed.

Moreover, it is preferable to employ a dry cutting method in the trimming process. As a result, for example, even if the phosphor in the phosphor layer 15 is weak against moisture or the like, deterioration of the phosphor can be suppressed. Examples of such phosphors include phosphors whose composition is represented by the following general formula (I).

_{A2MF6 :} Mn4 ⁺ (I)

However, in the general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs and NH ⁴⁺ , and M is from Group 4 elements and Group 14 elements is at least one element selected from the group consisting of
Note that, depending on the type of phosphor, other known cutting methods such as dicing and laser can be used other than the dry cutting method. In this manner, a plurality of laminates 20 including the light emitting elements 10 and the translucent members 14 are formed on the substrate 100 .

Next, a light reflecting member 21 can be formed on the substrate 100, as shown in FIGS. 7A and 7B. The light reflecting member 21 covers the pair of conductive members 100 a and 100 b of the substrate 100 , the joining member 103 and the laminate 20 . In the step of forming the light reflecting member 21, for example, the substrate 100 having a plurality of laminates 20 arranged on the first surface 101 is placed in a mold, and a resin material that will become the light reflecting member 21 is placed in the mold. It can be done by injecting and solidifying the resin material. The light reflecting member 21 is preferably formed so as not to cover the recognition target portion 102 . As a result, in the step of forming the groove 105, which will be described later, the groove 105 can be formed with high accuracy using the recognition target portion 102 as a reference. The light reflecting member 21 is made of, for example, white resin. Thereby, an intermediate structural body 23 including the light reflecting member 21 and the plurality of laminates 20 is formed on the substrate 100 . The plurality of laminates 20 are arranged along the first direction (X direction) inside the light reflecting member 21 .

Next, in FIGS. 8A and 8B, grooves 105 extending in the first direction (X direction) and the second direction (Y direction) are formed on the upper surface 23a of the intermediate structure 23 with the recognition target portion 102 as a reference. is preferred. In other words, it is preferable to form the shape of the light emitting surface side of the obtained light emitting device 1 with the recognition target portion 102 as a reference. Thereby, the shape of the light-emitting surface side of the light-emitting device 1 can be accurately formed.

Each groove 105 may have the same thickness and the same depth. The trench 105 preferably does not penetrate the intermediate structure 23 in the third direction (Z direction). Thereby, it is possible to suppress the strength of the intermediate structure 23 from decreasing. The groove 105 can be formed by dicing, laser, or the like.

Next, as shown in FIGS. 9A and 9B, the light reflecting member 21 located on the upper surface 23a of the intermediate structure 23 is removed. As a result, the translucent layer 16 of the translucent member 14 is exposed on the newly formed upper surface 23b. In the step of removing the light reflecting member 21, in addition to the light reflecting member 21 located on the upper surface 23b, part of the light transmitting layer 16 of the light transmitting member 14 located thereunder may be removed. Positioning the translucent layer 16 above the phosphor layer 15 can reduce the possibility of the phosphor layer 15 being unintentionally removed in the step of removing the light reflecting member 21 . As a method for removing the light reflecting member 21, known methods such as grinding, etching, cutting, and blasting can be used. Note that the step of removing the upper surface 23 a of the intermediate structure 23 may be performed before the step of forming the trench 105 .

An example of manufacturing and preparing the intermediate structure 23 has been described above. As described above, the step of preparing the intermediate structural body 23 may be prepared by purchasing the intermediate structural body 23 shown in FIGS. 10A and 10B, for example.

[(II) Removal step of removing part of the substrate and the pair of device electrodes]
Next, as shown in FIGS. 10A and 10B, the upper surface 23b of the intermediate structure 23 is fixed to the carrier 122 with the adhesive sheet 121 interposed therebetween. Carrier 122 is, for example, a silicon wafer or a metal substrate. In the following description, the up-down direction of the drawing is reversed with respect to the description so far. That is, in FIGS. 3A to 9B, the direction from the light-emitting element 10 to the light-transmitting member 14 is the upper direction in the drawing, but in FIGS. The direction is the upward direction in the drawing, and the description is also given accordingly.

Next, substrate 100 is removed. In the step of removing the substrate 100, the lower surface side of the substrate 100 (upper side in FIG. 10A) to part of the element electrodes 12a and 12b of the light emitting element 10 is ground using, for example, a grinding machine. A part of the light reflecting member 21 is removed in the step of removing the substrate 100 . By removing the substrate 100, a small light emitting device 1 can be manufactured. As a method for removing the substrate 100, known methods such as grinding, etching, cutting, and blasting can be used. In particular, it is preferable to use grinding as a method for removing the substrate 100 . Thereby, the exposed surface of the light reflecting member 21 and the exposed surface (upper surface 23c) of the device electrodes 12a and 12b can be positioned on the same plane, and the exposed surface (upper surface 23c) of the intermediate structure 23 can be made flat. can be done. By removing the substrate 100, the thickness from the light emitting surface to the rear surface of the obtained light emitting device 1 can be reduced, and the small light emitting device 1 can be obtained.

In FIG. 10B, the end of the bonding member 103 is positioned between the top end of the narrow portion 5 and the bottom end of the wide portion 6, and the step of removing the substrate 100 removes all of the bonding member 103. In FIG. ing. As a result, since the bonding member 103 does not remain on the exposed surface (upper surface 23 c ) of the intermediate structure 23 , the light reflecting member 21 located near the boundary between the bonding member 103 and the light reflecting member 21 after the substrate 100 is removed is cracked. can reduce the possibility of occurrence of

Moreover, it is preferable to perform a cleaning process after the process of removing the substrate 100 . By performing the cleaning step, even if removal debris such as the substrate 100 adheres to the surface of the intermediate structure 23 and remains, the removal debris can be effectively removed. The cleaning process is performed by blowing air, immersing in a cleaning liquid, or spraying a cleaning liquid (including fixed carbon dioxide).
In the following description, the intermediate structural body 23 from which the substrate 100 has been removed may be referred to as the intermediate structural body 23 .

Next, as shown in FIGS. 11A and 11B, it is preferable to form a pair of conductive films 25 on the surfaces of the pair of device electrodes 12a and 12b exposed on the upper surface 23c of the intermediate structure 23. Next, as shown in FIGS. A pair of conductive films 25 function as external electrodes. If the pair of device electrodes 12a and 12b is made of a member such as copper that is easily oxidized, the surfaces of the pair of device electrodes 12a and 12b exposed to the outside may deteriorate due to oxidation or the like. be. Therefore, the pair of conductive films 25 also has a role of protecting the surfaces of the device electrodes 12a and 12b. As a method for forming the conductive film 25, known methods such as sputtering, vapor deposition, printing, stamping, ALD, CVD, and plating can be used.

The conductive film 25 is preferably made of a material having excellent corrosion resistance and oxidation resistance. For example, the outermost layer of the conductive film 25 is a platinum group element metal such as gold or platinum. In particular, the outermost surface of the conductive film 25 is preferably made of gold, which has good solderability.

The conductive film 25 may be composed of only one layer of a single material, or may be composed of laminated layers of different materials. The conductive film 25 can be composed of a layer containing gold, silver, tin, platinum, rhodium, titanium, ruthenium, molybdenum, tantalum, aluminum, tungsten, palladium, nickel, or alloys thereof. In particular, the conductive film 25 preferably contains a high-melting-point metal such as ruthenium, molybdenum, or tantalum. Thereby, the heat resistance of the conductive film 25 can be improved. For example, when the conductive film 25 is composed of a plurality of layers, by providing these high melting point metals inside the outermost layer of the conductive film 25, Sn contained in the solder diffuses into the light emitting device 1. It is possible to reduce the number of The conductive film 25 can have a laminated structure such as Ni/Ru/Au or Ti/Pt/Au. Also, the thickness of the metal layer containing a high melting point metal such as ruthenium is preferably about 10 Å to 1000 Å.

Next, the conductive film 25 is selectively removed by, for example, laser light irradiation, etching, blasting, or photolithography. Specifically, the conductive film 25 covering the inter-electrode region between the element electrodes 12a and 12b on the upper surface 23c of the intermediate structure 23 is removed, and the adjacent element electrodes 12a and adjacent element electrodes are removed. The conductive film 25 covering the region 108 between the electrodes 12b is removed. As a result, the light reflecting members 21 located in the inter-electrode regions 107 and 108 are exposed. On the other hand, the device electrodes 12 a and 12 b are covered with a conductive film 25 .

Laser light irradiation is preferably used as a method for selectively removing the conductive film 25 . By using laser light irradiation, the conductive film 25 can be patterned without using a mask or the like. In addition, by irradiating the conductive film 25 with laser light, laser ablation can be generated and part of the conductive film 25 can be removed. Note that laser ablation is a phenomenon in which the surface of a solid is removed when the irradiation intensity of the laser beam irradiated on the surface of the solid exceeds a certain level (threshold value).
When the conductive film 25 is removed using laser light irradiation, the wavelength of the laser light is preferably selected such that the reflectance of the conductive film 25 is low, for example, the wavelength is 90% or less. For example, when the outermost surface of the conductive film 25 is Au, it is preferable to use a laser with an emission wavelength shorter than the green region (eg, 550 nm) rather than a red region (eg, 640 nm). As a result, laser ablation can be efficiently generated, and mass productivity can be improved.

The planar shape of the conductive film 25 can be rectangular, circular, elliptical, or a combination of these shapes. In addition, the outer edge of the conductive film 25 can be a straight line, a curved line, or a combination of a straight line and a curved line. For example, the planar shape of the conductive film 25 can be L-shaped or T-shaped. Further, the planar shape of the conductive film 25 on the device electrode 12a may be different from the planar shape of the conductive film 25 on the device electrode 12b. By making the planar shapes of the respective conductive films 25 different, for example, the polarity of the light emitting device 1 can be recognized.

Next, as shown in FIGS. 12A and 12B, the intermediate structure 23 is cut from the upper surface 23c side. A cutting position is set at a position facing the groove 105 . As a cutting method, for example, the cutting surface of the intermediate structure 23 is cut by dicing while applying a fluid such as water. Thereby, it is possible to suppress deformation of the light reflecting member 21 and the like due to heat generated by the cutting. As a cutting method, a known cutting method such as dicing including a dry cutting method or laser can be used. The cutting width is preferably larger than the width of the groove 105 . As a result, the width of the light emitting device 1 on the lower surface side is smaller than the width of the light emitting device 1 on the upper surface side (light emitting surface side). Thereby, miniaturization of the light-emitting device 1 can be achieved.

Each constituent member used in the manufacturing method of the light emitting device 1 of the present disclosure will be described below.

(Light emitting element 10)
The light emitting element 10 is, for example, an LED chip. The light-emitting element 10 has a semiconductor multilayer structure including, for example, a nitride semiconductor (In _x Al _y Ga _1-x-y N, 0≦x, 0≦y, x+y≦1) capable of emitting light in the ultraviolet to visible range. can have The emission peak wavelength of the light emitting element 10 is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and even more preferably 450 nm or more and 475 nm or less, in consideration of the luminous efficiency of the light emitting device, the excitation spectrum of the phosphor, the color mixing property, and the like. preferable.

The number of light emitting elements may be one, or two or more. When there are a plurality of light-emitting elements, the plurality of light-emitting elements may be, for example, a plurality of blue light-emitting elements that emit blue light, three light-emitting elements that emit blue light, green light, and red light, respectively, or blue light-emitting elements. A combination of a light emitting element that emits green light and a light emitting element that emits green light can be used. When the light-emitting device 1 is used as a light source for a liquid crystal display device or the like, the light-emitting elements include one light-emitting element that emits blue light, two light-emitting elements that emit blue light, three or more light-emitting elements that emit blue light, Alternatively, it is preferable to use a combination of a light-emitting element that emits blue light and a light-emitting element that emits green light. A light-emitting element that emits blue light and a light-emitting element that emits green light preferably have a half-value width of 40 nm or less, and more preferably have a half-value width of 30 nm or less. This allows blue light and green light to easily have sharp peaks. As a result, for example, when the light-emitting device is used as a light source for a liquid crystal display device, the liquid crystal display device can achieve high color reproducibility. Also, the plurality of light emitting elements can be electrically connected in series, in parallel, or in a connection method combining series and parallel.

The planar shape of the light emitting element 10 is not particularly limited, but may be a square shape or a rectangular shape elongated in one direction. Moreover, the planar shape of the light emitting element 10 may be a hexagonal shape or other polygonal shapes. The light emitting device 10 has a pair of device electrodes. Device electrodes can be composed of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or alloys thereof. The side surface of the light emitting element 10 may be perpendicular to the top surface of the light emitting element 10, or may be inclined inward or outward.

(translucent member 14)
The translucent member 14 is provided on the light emitting element 10 to protect the light emitting element 10 . The translucent member 14 may be a single layer or multiple layers. When the translucent member 14 has a plurality of layers, the base material of each layer may be the same or different.

As the base material of the translucent member 14, a material having translucency with respect to the light from the light emitting element 10 is used. In this specification, having translucency means that the light transmittance at the emission peak wavelength of the light emitting element 10 is 60% or more, preferably 70% or more, and more preferably 80% or more. . For the base material of the translucent member 14, for example, silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resin thereof can be used. Also, the base material of the translucent member 14 may be glass. In particular, silicone resins and epoxy resins are preferably used because of their excellent heat resistance and light resistance. Examples of silicone resins include dimethylsilicone resin, phenyl-methylsilicone resin, and diphenylsilicone resin. In addition, the modified resin in this specification includes a hybrid resin.

The translucent member 14 may contain light diffusing particles. Light diffusing particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, and the like. The light diffusing particles can be used singly or in combination of two or more of them. In particular, it is preferable to use silicon oxide, which has a small linear expansion coefficient, as the light diffusing particles. Moreover, it is preferable to use nanoparticles as the light diffusing particles. As a result, scattering of light emitted by the light emitting element is increased, and the amount of phosphor used can be reduced. Note that nanoparticles refer to particles having a particle size of 1 nm or more and 100 nm or less. Moreover, the particle size in this specification is mainly defined by D50.

The translucent member 14 may contain phosphor. A phosphor is a member that absorbs at least part of the primary light emitted by the light emitting element and emits secondary light with a wavelength different from that of the primary light. As the phosphor, one of the phosphors shown below can be used alone, or two or more of them can be used in combination.

Examples of phosphors include yttrium-aluminum-garnet-based phosphors (eg, Y ₃ (Al, Ga) ₅ O ₁₂ :Ce), lutetium-aluminum-garnet-based phosphors (eg, Lu ₃ (Al, Ga) ₅ O ₁₂ : Ce), terbium-aluminum-garnet-based phosphors (e.g., _Tb3 (Al, Ga) _5O12 :Ce), silicate-based _{phosphors (e.g., (Ba, Sr)2SiO4 :} Eu), chlorosilicate-based phosphors (e.g. Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ :Eu), β-sialon phosphors (e.g. Si _6-z Al _z O _z N _8-z :Eu (0<z<4.2)), SGS-based Phosphors (eg SrGa ₂ S ₄ :Eu), alkaline earth aluminate phosphors (eg (Ba,Sr,Ca)Mg _x Al ₁₀ O _17-x :Eu,Mn), α-sialon phosphors (eg M _z (Si, Al) ₁₂ (O, N) ₁₆ (where 0 < z ≤ 2 and M is a lanthanide element excluding Li, Mg, Ca, Y, and La and Ce), nitrogen-containing calcium aluminosilicate phosphors (for example, (Sr, Ca)AlSiN ₃ :Eu), manganese-activated fluoride phosphors (phosphors represented by the general formula (I) A ₂ [M _1-a Mna _{F 6} ] (provided that In the above general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs and _NH4 , and M is the group consisting of Group 4 elements and Group 14 elements. is at least one element selected from, and a satisfies 0 < a < 0.2)) The yttrium-aluminum-garnet-based phosphor emits light by substituting part of Y with Gd The peak wavelength can be shifted to the long wavelength side, and a representative example of the manganese-activated fluoride-based phosphor is a manganese-activated potassium fluorosilicate phosphor (for example, K ₂ SiF ₆ :Mn).
Also, the translucent member 14 may be a sintered body of a phosphor and an inorganic material such as alumina, or a plate crystal of the phosphor.

The translucent member 14 can include a wavelength conversion layer containing phosphor and a transparent layer substantially free of phosphor. By providing the transparent layer on the upper surface of the wavelength conversion layer, the transparent layer functions as a protective layer and deterioration of the phosphor in the wavelength conversion layer can be suppressed. Note that "substantially free of phosphor" means that unavoidable inclusion of phosphor is not excluded, and the content of phosphor is, for example, 0.05% by weight or less.

(Light reflecting member 21)
From the viewpoint of the light extraction efficiency in the upper surface direction of the light emitting device 1, the light reflecting member 21 preferably has a light reflectance of 70% or more, more preferably 80% or more, at the emission peak wavelength of the light emitting element 10. More preferably, it is 90% or more. Furthermore, the light reflecting member 21 is preferably white. The light-reflecting member 21 can contain a light-reflecting substance in a resin material serving as a base material. The light reflecting member 21 can be obtained by solidifying a liquid resin material. The light reflecting member 21 can be formed by transfer molding, injection molding, compression molding, potting, or the like.

The light reflecting member 21 can contain a resin material as a base material. A thermosetting resin, a thermoplastic resin, or the like can be used as the resin material that serves as the base material. Specifically, epoxy resin, silicone resin, modified epoxy resin such as silicone-modified epoxy resin, modified silicone resin such as epoxy-modified silicone resin, modified silicone resin, unsaturated polyester resin, saturated polyester resin, polyimide resin, modified polyimide resin , polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, and the like. In particular, as the resin material of the light reflecting member 21, it is preferable to use a thermosetting resin such as an epoxy resin or a silicone resin that is excellent in heat resistance and light resistance.

It is preferable that the light reflecting member 21 contains a light reflecting substance in the above-described base resin material. As the light-reflecting substance, it is preferable to use a member that hardly absorbs light from the light-emitting element and that has a large difference in refractive index with respect to the resin material serving as the base material. Such light-reflecting substances are, for example, titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride and the like.

(Adhesive layer 13, light guide member 13)
For the adhesive layer 13 and the light guide member 13, the resin material exemplified for the light reflecting member 21 can be used. In particular, it is preferable to use thermosetting translucent resin such as silicone resin, silicone-modified resin, epoxy resin, and phenol resin for adhesive layer 13 and light guide member 13 . It is preferable that the adhesive layer 13 and the light guide member 13 have high light transmittance. Therefore, it is usually preferable that the adhesive layer 13 and the light guide member 13 do not substantially contain additives that reflect, absorb, or scatter light. “Substantially free of additives” means that unavoidable contamination of additives is not excluded. The adhesive layer 13 and the light guide member 13 may contain light diffusing particles and/or phosphors similar to those of the translucent member 14 described above.

(Substrate 100)
The substrate 100 includes a plate-like base material made of glass epoxy resin, ceramic, polyimide, or the like. Further, the substrate 100 has land portions and wiring patterns made of copper, gold, silver, nickel, palladium, tungsten, chromium, titanium, or alloys thereof on the base material. The land portion and the wiring pattern are formed using methods such as plating, lamination press-bonding, pasting, sputtering, vapor deposition, and etching.

(Joining member 103)
Any material known in the art can be used for the joining member 103 . Specifically, the bonding member 103 is, for example, tin-bismuth-based, tin-copper-based, tin-silver-based, gold-tin-based solder (specifically, a solder containing Ag, Cu, and Sn as main components). alloys, alloys containing Cu and Sn as main components, alloys containing Bi and Sn as main components, etc.), eutectic alloys (alloys containing Au and Sn as main components, Au and Si as main components conductive pastes such as silver, gold, and palladium, bumps, anisotropic conductive materials, brazing materials such as low melting point metals, and the like.

1: light emitting device 5: narrow portion 6: wide portion 7a: first lower surface 7b: second lower surface 8: convex portion 9: pad portion 10: light emitting element 11: semiconductor laminate 11a: lower surface 11b: upper surface 12a, 12b: Element electrode 13: Adhesive layer, light guide member 14: Translucent member 15, 15a, 15b: Phosphor layer 16: Translucent layer 20: Laminated body 21: Light reflecting member 21a: Upper part 21b: Lower part 22: Recess 23 : intermediate structure 25: conductive film 25A: first conductive film 25B: second conductive film 40a: bottom surface 40b: top surface 40c: first side surface 40d: second side surface 40e: third side surface 40f: fourth side surface 100: substrate 100a , 100b: Conductive member 101: First surface 102: Recognition target part 103: Joining member 105: Groove 107: Inter-electrode region 108: Region 121: Adhesive sheet 122: Carrier D: Recess M: Intermediate part

Claims (5)

a substrate having at least one pair of conductive members on a first surface;
a semiconductor laminate, and a pair of element electrodes connected to the lower surface side of the semiconductor laminate, wherein a cross section passing through both of the pair of element electrodes in a direction perpendicular to the lower surface of the semiconductor laminate includes: are a narrow portion connected to the lower surface side of the semiconductor laminate, and a narrow portion positioned below the narrow portion and having a width in a direction from one of the device electrodes to the other of the device electrodes. a light emitting element having a wide portion having a first lower surface that is wider than the width of
an intermediate structure in which the light emitting element is arranged on the pair of conductive members via a bonding member such that the first lower surface of the wide portion of the light emitting element faces the first surface of the substrate; the process of preparing,
By removing a part of each of the substrate and the pair of element electrodes from the lower surface side of the substrate, a width narrower than the width of the first lower surface is formed from the narrow portion of each of the pair of element electrodes. and exposing the second lower surface of the device electrode. The step of preparing the intermediate structure includes:
A step of forming an end portion of the joint member so as to be positioned between an upper surface of the narrow portion and a lower surface of the wide portion in a height direction;
The step of exposing the second lower surface of the device electrode includes :
2. The method of manufacturing a light-emitting device according to claim 1, comprising the step of removing all of said joining member. 3. The method of manufacturing a light-emitting device according to claim 1, wherein said narrow portion and said wide portion are rectangular parallelepipeds in said cross section . each of the pair of device electrodes has an intermediate portion between the narrow portion and the wide portion;
In the cross section, the width of the intermediate portion in the direction from one device electrode to the other device electrode is equal to the width of the wide portion and the narrow portion in the direction from one device electrode to the other device electrode. 4. The method of manufacturing a light emitting device according to claim 3, wherein the width is narrower than the width. each of the pair of device electrodes further includes a pad portion located between the semiconductor laminate and the narrow portion;
The light emission according to any one of claims 1 to 4, wherein in the cross section, the geometric center of the narrow portion is located outside the geometric center of the pad portion with respect to the geometric center of the light emitting element. Method of manufacturing the device.

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