JP7294794B2 - パッド摩耗インジケータを有する研磨パッド - Google Patents
パッド摩耗インジケータを有する研磨パッド Download PDFInfo
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- JP7294794B2 JP7294794B2 JP2018214516A JP2018214516A JP7294794B2 JP 7294794 B2 JP7294794 B2 JP 7294794B2 JP 2018214516 A JP2018214516 A JP 2018214516A JP 2018214516 A JP2018214516 A JP 2018214516A JP 7294794 B2 JP7294794 B2 JP 7294794B2
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- 238000005498 polishing Methods 0.000 title claims description 61
- 229920001577 copolymer Polymers 0.000 claims description 37
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 13
- 229920002635 polyurethane Polymers 0.000 claims description 13
- 239000004814 polyurethane Substances 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 claims description 12
- 230000003750 conditioning effect Effects 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 125000005647 linker group Chemical group 0.000 claims description 4
- 238000000034 method Methods 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 13
- 239000000178 monomer Substances 0.000 description 9
- 239000002131 composite material Substances 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- GBJVVSCPOBPEIT-UHFFFAOYSA-N AZT-1152 Chemical compound N=1C=NC2=CC(OCCCN(CC)CCOP(O)(O)=O)=CC=C2C=1NC(=NN1)C=C1CC(=O)NC1=CC=CC(F)=C1 GBJVVSCPOBPEIT-UHFFFAOYSA-N 0.000 description 7
- 229920001109 fluorescent polymer Polymers 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000002073 fluorescence micrograph Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 241000894007 species Species 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- MJYSISMEPNOHEG-UHFFFAOYSA-N anthracen-9-ylmethyl 2-methylprop-2-enoate Chemical compound C1=CC=C2C(COC(=O)C(=C)C)=C(C=CC=C3)C3=CC2=C1 MJYSISMEPNOHEG-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 235000013877 carbamide Nutrition 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 229920001114 fluorescent copolymer Polymers 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BUQDPCFXOBQDLX-UHFFFAOYSA-N pyren-1-ylmethyl 2-methylprop-2-enoate Chemical compound C1=C2C(COC(=O)C(=C)C)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 BUQDPCFXOBQDLX-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- 150000003673 urethanes Chemical class 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- -1 Dansyl acrylate Chemical compound 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002872 contrast media Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- UACSZOWTRIJIFU-UHFFFAOYSA-N hydroxymethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCO UACSZOWTRIJIFU-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000011326 mechanical measurement Methods 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- CXOYJPWMGYDJNW-UHFFFAOYSA-N naphthalen-2-yl 2-methylprop-2-enoate Chemical compound C1=CC=CC2=CC(OC(=O)C(=C)C)=CC=C21 CXOYJPWMGYDJNW-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- WPBNLDNIZUGLJL-UHFFFAOYSA-N prop-2-ynyl prop-2-enoate Chemical compound C=CC(=O)OCC#C WPBNLDNIZUGLJL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
ケミカルメカニカルプラナリゼーション(CMP)は、多層3次元電気回路を正確に構築するために、集積回路の構成の層を平らにするかまたは平坦化するのに広く使用されている研磨プロセスの一種である。研磨されるべき層は、典型的には、基礎となる基板上に堆積されている薄いフィルム(10,000オングストローム未満)である。CMPの目的は、ウェーハ表面上の過剰の材料を取り除いて、均一の厚さの極めて平坦な層を生産することであり、前記均一性は、ウェーハ全域にわたって延在する。除去速度および除去の均一性の制御が最も重要である。
本発明のある態様は、集積回路ウェーハを研磨するのに適した研磨パッドであって、研磨されるべき物品と接触するポリウレタン研磨層であって、最上表面を有するポリウレタン研磨層と;ポリウレタン研磨層中の少なくとも1つの溝であって、前記ポリウレタン研磨層の最上表面から下方に延在している少なくとも1つの溝であって、ある深さを有する少なくとも1つの溝と、少なくとも1つの溝に隣接する研磨層の摩耗を検出するためのポリウレタン研磨層内に位置する少なくとも1つのコポリマー摩耗検出器であって、ダイヤモンドコンディショニング中のポリウレタン研磨層の摩耗率と類似の摩耗率を有する少なくとも1つの摩耗検出器であって、第一の領域が、UV硬化性連結基で連結された蛍光アクリレート/ウレタンコポリマーである、2つの領域を含む少なくとも1つの摩耗検出器とを含み、少なくとも1つの摩耗検出器が、蛍光透過性ポリマーを励起するのに十分な波長の活性化源で蛍光アクリレート/ウレタンコポリマー内の蛍光基を活性化することによって、少なくとも1つの溝に隣接する研磨層の摩耗を検出することを可能する、研磨パッドを含む。
本発明の本質的な特徴は、パッド摩耗インジケータにおける蛍光機能性を提供するための、研磨パッドにおけるコポリマー摩耗インジケータの使用である。これは、蛍光アクリレートをウレタンポリマーに組み込んで蛍光ウレタンアクリレートコポリマーを形成することによって達成される。本明細書の目的のために、ウレタンポリマーは、ウレタン、尿素およびウレタンと尿素のブレンドを含む。1つの領域は、多孔性もしくは非多孔性のポリウレタンまたは非多孔性のウレタン-アクリレートコポリマーなどの非蛍光材料である。第二の領域は、ポリマー構造それ自体の一部である蛍光部分を含有する。界面インターフェースがパッドにおける所望の最終溝深さの基準となるように2つの層の相対厚さを調整することによって、パッドの使用中の上部層の摩損を、溝摩耗インジケータとして採用することができる。
Claims (4)
- 研磨されるべき物品と接触する、研磨表面を有するポリウレタン研磨層と;
ポリウレタン研磨層中の少なくとも1つの溝であって、前記ポリウレタン研磨層の研磨表面から下方に延在している、ある深さを有する少なくとも1つの溝と、
前記少なくとも1つの溝に隣接する研磨層の摩耗を検出するためのポリウレタン研磨層内に位置する少なくとも1つのコポリマー摩耗検出器と、
を含む、集積回路ウェーハを研磨するのに適した研磨パッドであって、
前記少なくとも1つのコポリマー摩耗検出器が、ダイヤモンドコンディショニング中のポリウレタン研磨層の摩耗率と類似の摩耗率を有し、UV硬化性連結基で連結された蛍光アクリレート/ウレタンコポリマーである第一の領域と第二の非蛍光領域の2つの領域を含み、該2つの領域において、蛍光アクリレート/ウレタンコポリマーを励起するのに十分な波長の活性化源で蛍光アクリレート/ウレタンコポリマー内の蛍光基を活性化することによって、前記少なくとも1つの溝に隣接する研磨層の摩耗を検出することを可能にする、研磨パッド。 - 界面インターフェースが、第二の非蛍光領域と、蛍光アクリレート/ウレタンコポリマーを有する第一の領域とを分離する、請求項1に記載の研磨パッド。
- 界面インターフェースが、研磨パッドの研磨表面と平行である、請求項2に記載の研磨パッド。
- 界面インターフェースが、パッド摩耗の持続的な決定のために研磨パッドの研磨表面に対してある角度をなす、請求項2に記載の研磨パッド。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/815,121 | 2017-11-16 | ||
US15/815,121 US10465097B2 (en) | 2017-11-16 | 2017-11-16 | Aliphatic UV cured polyurethane optical endpoint detection windows with high UV transparency for CMP polishing pads |
US16/185,643 | 2018-11-09 | ||
US16/185,643 US11192215B2 (en) | 2017-11-16 | 2018-11-09 | Polishing pad with pad wear indicator |
Publications (2)
Publication Number | Publication Date |
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JP2019145779A JP2019145779A (ja) | 2019-08-29 |
JP7294794B2 true JP7294794B2 (ja) | 2023-06-20 |
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JP2018214516A Active JP7294794B2 (ja) | 2017-11-16 | 2018-11-15 | パッド摩耗インジケータを有する研磨パッド |
Country Status (5)
Country | Link |
---|---|
US (1) | US11192215B2 (ja) |
JP (1) | JP7294794B2 (ja) |
KR (1) | KR102607153B1 (ja) |
CN (1) | CN109794849B (ja) |
TW (1) | TWI800557B (ja) |
Families Citing this family (1)
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US11260495B2 (en) | 2018-07-27 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and methods for chemical mechanical polishing |
Citations (3)
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JP2008516452A (ja) | 2004-10-06 | 2008-05-15 | バジャジ,ラジェーヴ | 改良された化学機械平坦化の方法およびシステム |
JP2009018399A (ja) | 2007-07-13 | 2009-01-29 | Nitta Haas Inc | 研磨パッド |
JP2013542863A (ja) | 2010-11-18 | 2013-11-28 | キャボット マイクロエレクトロニクス コーポレイション | 透過性領域を含む研磨パッド |
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US6090475A (en) | 1996-05-24 | 2000-07-18 | Micron Technology Inc. | Polishing pad, methods of manufacturing and use |
JPH1086056A (ja) | 1996-09-11 | 1998-04-07 | Speedfam Co Ltd | 研磨パッドの管理方法及び装置 |
US5913713A (en) | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
US6106661A (en) * | 1998-05-08 | 2000-08-22 | Advanced Micro Devices, Inc. | Polishing pad having a wear level indicator and system using the same |
US20020077037A1 (en) * | 1999-05-03 | 2002-06-20 | Tietz James V. | Fixed abrasive articles |
US8075372B2 (en) | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
US9017140B2 (en) * | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
JP2013525126A (ja) | 2010-04-20 | 2013-06-20 | アプライド マテリアルズ インコーポレイテッド | 改善された研磨パッドプロファイルのための閉ループ制御 |
US9305851B2 (en) * | 2013-11-19 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for chemical mechanical planarization with fluorescence detection |
US9446498B1 (en) * | 2015-03-13 | 2016-09-20 | rohm and Hass Electronic Materials CMP Holdings, Inc. | Chemical mechanical polishing pad with window |
CN106853610B (zh) * | 2015-12-08 | 2019-11-01 | 中芯国际集成电路制造(北京)有限公司 | 抛光垫及其监测方法和监测系统 |
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- 2018-11-15 TW TW107140564A patent/TWI800557B/zh active
- 2018-11-15 JP JP2018214516A patent/JP7294794B2/ja active Active
- 2018-11-16 KR KR1020180141536A patent/KR102607153B1/ko active IP Right Grant
- 2018-11-16 CN CN201811372364.7A patent/CN109794849B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008516452A (ja) | 2004-10-06 | 2008-05-15 | バジャジ,ラジェーヴ | 改良された化学機械平坦化の方法およびシステム |
JP2009018399A (ja) | 2007-07-13 | 2009-01-29 | Nitta Haas Inc | 研磨パッド |
JP2013542863A (ja) | 2010-11-18 | 2013-11-28 | キャボット マイクロエレクトロニクス コーポレイション | 透過性領域を含む研磨パッド |
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JP2019145779A (ja) | 2019-08-29 |
KR102607153B1 (ko) | 2023-11-28 |
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US20190224811A1 (en) | 2019-07-25 |
TWI800557B (zh) | 2023-05-01 |
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KR20190056334A (ko) | 2019-05-24 |
US11192215B2 (en) | 2021-12-07 |
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