JP7291715B2 - Solar cell device and solar cell module - Google Patents

Description

TECHNICAL FIELD The present invention relates to a solar cell device and a solar cell module including the same.

In recent years, when modularizing double-sided electrode type solar cells, there is a method in which parts of the solar cells are overlapped to directly connect them electrically and physically without using conductive connection lines. exists. Such a connection method is called a shingling method, and a plurality of solar cells electrically connected by the shingling method is called a solar cell string (solar cell device) (see, for example, Patent Document 1).

In solar cell strings (solar cell devices), more solar cells can be mounted in the limited solar cell mounting area of a solar cell module. Better output. In addition, in the solar cell string (solar cell device), there is no gap between the solar cells, and the design of the solar cell module is improved.

JP 2017-517145 A

From the viewpoint of improving output and designability, it is being studied to overlap and connect parts of the solar cells using the shingling method even when back electrode type solar cells are modularized. .
However, when part of the back electrode type solar cells are overlapped using the shingling method, a step is generated between these solar cells, and a step is generated between the electrodes on the back side of these solar cells. . Therefore, the connection of these solar cells is not easy, and the productivity of the solar cell module is lowered.

An object of the present invention is to provide a solar cell device capable of improving output power, improving designability, and improving productivity, and a solar cell module including the same.

A solar cell device according to the present invention is a solar cell device comprising a plurality of solar cells electrically connected by a connecting member, wherein one solar cell among the adjacent solar cells in the plurality of solar cells A part of the one main surface side of the one end side of the cell is the other main surface side opposite to the one main surface side of the other end side opposite to the one end side of the other adjacent solar cell. Each of the plurality of solar cells includes a semiconductor substrate, a first conductivity type semiconductor layer formed on a portion of the other main surface side of the semiconductor substrate, and the other main surface of the semiconductor substrate. a second conductivity type semiconductor layer formed on the other part of the surface side; a first electrode formed on one end side of the other main surface side corresponding to the first conductivity type semiconductor layer; and a second electrode arranged on the other main surface side of the other end side corresponding to the semiconductor layer, and the connection member includes the conductive layer and the conductive layer on the solar cell side of the conductive layer. One end of the connection member is electrically connected to the first electrode of one solar cell, and the other end of the connection member is connected to the other solar cell. It is electrically connected to the second electrode of the cell.

A solar cell module according to the present invention comprises a single or a plurality of solar cell devices described above.

ADVANTAGE OF THE INVENTION According to this invention, the output of a solar cell module improves, the designability of a solar cell module improves, and also the productivity of a solar cell module improves.

It is the figure which looked at the solar cell module provided with the solar cell device which concerns on this embodiment from the back surface side. FIG. 2 is a cross-sectional view of the solar cell module shown in FIG. 1 taken along the line II-II. FIG. 3 is a view of the solar cell in the solar cell device shown in FIGS. 1 and 2 as viewed from the back side; FIG. 4 is a cross-sectional view taken along line IV-IV of the solar cell shown in FIG. 3; 3 is an enlarged cross-sectional view of the vicinity of the overlapping region of the solar cell device shown in FIG. 2; FIG. It is the figure which looked at the connection member which concerns on the modification of this embodiment from the resin layer side. FIG. 6B is a sectional view taken along line VIB-VIB of the connection member shown in FIG. 6A; FIG. 11 is an enlarged cross-sectional view of the vicinity of the overlapping region of the solar cell device according to the modified example of the present embodiment;

An example of an embodiment of the present invention will be described below with reference to the accompanying drawings. In each drawing, the same reference numerals are given to the same or corresponding parts. Also, for convenience, hatching, member numbers, etc. may be omitted, but in such cases, other drawings shall be referred to.

(solar cell module)
FIG. 1 is a view of a solar cell module provided with a solar cell device according to this embodiment, viewed from the back side, and FIG. 2 is a cross-sectional view of the solar cell module shown in FIG. 1 taken along line II-II. In FIG. 1, a light-receiving side protective member 3, a back side protective member 4, and a sealing material 5, which will be described later, are omitted, and a connecting member 6, which will be described later, is shown through. As shown in FIGS. 1 and 2, the solar cell module 100 is a solar cell device (also referred to as a solar cell string) in which a plurality of rectangular back electrode type solar cells 2 are electrically connected using a shingling method. 1).

Solar cell device 1 is sandwiched between light-receiving side protective member 3 and back side protective member 4 . A liquid or solid sealing material 5 is filled between the light-receiving-side protective member 3 and the back-side protective member 4 , thereby sealing the solar cell device 1 .

The encapsulant 5 seals and protects the solar battery device 1, that is, the solar battery cell 2, between the light-receiving-side surface of the solar battery cell 2 and the light-receiving-side protective member 3, and between the solar battery cell 2 and the light-receiving side protective member 3. 2 and the back side protection member 4.
The shape of the sealing material 5 is not particularly limited, and may be, for example, a sheet shape. This is because the sheet shape facilitates covering the front and back surfaces of the planar solar battery cell 2 .
The material of the sealing material 5 is not particularly limited, but preferably has a property of transmitting light (translucency). Moreover, it is preferable that the material of the encapsulant 5 has adhesiveness to bond the photovoltaic cell 2 , the light-receiving side protective member 3 , and the back side protective member 4 .
Examples of such materials include ethylene/vinyl acetate copolymer (EVA), ethylene/α-olefin copolymer, ethylene/vinyl acetate/triallyl isocyanurate (EVAT), polyvinyl butyrate (PVB), acrylic Translucent resins such as resins, urethane resins, and silicone resins can be used.

The light-receiving-side protective member 3 covers the surface (light-receiving surface) of the solar battery device 1 , that is, the solar battery cell 2 via the encapsulant 5 to protect the solar battery cell 2 .
The shape of the light-receiving-side protective member 3 is not particularly limited, but a plate-like or sheet-like shape is preferable from the point of indirectly covering the planar light-receiving surface.
Although the material of the light-receiving side protective member 3 is not particularly limited, it is preferable to use a material that has translucency and is resistant to ultraviolet light, similar to the sealing material 5. For example, glass, or Transparent resins such as acrylic resins and polycarbonate resins can be used. Further, the surface of the light-receiving-side protective member 3 may be processed into an uneven shape, or may be coated with an antireflection coating layer. This is because the light-receiving-side protective member 3 having such a configuration makes it difficult to reflect the received light, and guides more light to the solar cell device 1 .

The back side protection member 4 covers the back surface of the solar battery device 1 , that is, the solar battery cell 2 via the encapsulant 5 to protect the solar battery cell 2 .
The shape of the back side protective member 4 is not particularly limited, but like the light-receiving side protective member 3, it is preferably plate-like or sheet-like in that it indirectly covers the planar back side.
Although the material for the back side protection member 4 is not particularly limited, a material that prevents the infiltration of water or the like (highly impervious to water) is preferable. Examples thereof include laminates of resin films such as polyethylene terephthalate (PET), polyethylene (PE), olefin resins, fluorine-containing resins, or silicone-containing resins, and metal foils such as aluminum foil.

(solar cell device)
In the solar cell device 1 , the solar cells 2 are connected in series by partially overlapping the ends of the solar cells 2 . Specifically, one of the adjacent solar cells 2, 2 on one main surface side (for example, the light receiving surface side) of one end side in the X direction (for example, the right end side in FIG. 2) part is the other main surface side (opposite to the one main surface side described above) of the other end side in the X direction of the other solar cell 2 (the other end side opposite to the above-described one end side, for example, the left end side in FIG. 2). the other major surface side (for example, the back surface side) of the . A first electrode (described later) extending in the Y direction is formed on the back surface side of one end side of the solar cell 2 , and extends in the Y direction on the back surface side of the other end side of the solar cell 2 . A second electrode (described below) is formed. A first electrode on the back side of one end of one solar cell 2 is electrically connected to a second electrode on the back side of the other end of the other solar cell 2 via a connecting member 6 . .

In this way, a plurality of solar cells 2 are evenly aligned in a certain direction and tilted to form a stacked structure like a tiled roof. The method is called the shingling method. A plurality of solar cells 2 connected in a string is called a solar cell string (solar cell device).
Below, the region where the adjacent solar cells 2, 2 overlap is referred to as an overlapping region Ro.
Details of the solar cell device 1 and the connection member 6 will be described later. The solar cell 2 in the solar cell device 1 will be described below.

(solar battery cell)
FIG. 3 is a view of the solar cell 2 in the solar cell device 1 shown in FIGS. 1 and 2 as seen from the back side. The solar cell 2 shown in FIG. 3 is a rectangular back electrode type solar cell. The solar cell 2 includes a semiconductor substrate 11 having two main surfaces, one main surface (for example, the light receiving surface) and the other main surface (for example, the back surface). It has a first conductivity type region 7 and a second conductivity type region 8 on its side.

The first conductivity type region 7 has a so-called comb shape, and includes a plurality of finger portions 7f corresponding to comb teeth and bus bar portions 7b corresponding to support portions of the comb teeth. The busbar portion 7b extends in the Y direction (second direction) along one side of the semiconductor substrate 11, and the finger portions 7f extend from the busbar portion 7b in the X direction (first direction) intersecting the Y direction. extend to
Similarly, the second conductivity type region 8 has a so-called comb shape, and has a plurality of finger portions 8f corresponding to comb teeth and bus bar portions 8b corresponding to support portions of the comb teeth. Busbar portion 8b extends in the Y direction along one side portion of semiconductor substrate 11 opposite to the other side portion, and finger portion 8f extends in the X direction from busbar portion 8b.
The finger portions 7f and the finger portions 8f are alternately provided in the Y direction.
The first conductivity type region 7 and the second conductivity type region 8 may be formed in stripes.

FIG. 4 is a sectional view taken along line IV-IV of the solar cell 2 shown in FIG. As shown in FIG. 4 , the solar cell 2 includes an intrinsic semiconductor layer 13 and an antireflection layer 15 that are laminated in order on the light-receiving surface side, which is the main surface of the semiconductor substrate 11 on the light-receiving side. In addition, the solar cell 2 is partially (mainly, the first conductivity type region 7 ) on the back side, which is the main surface (the other main surface) of the main surface of the semiconductor substrate 11 opposite to the light-receiving surface. It comprises an intrinsic semiconductor layer 23, a first conductivity type semiconductor layer 25, a transparent electrode layer 27 and a metal electrode layer 28 which are laminated. In addition, the solar cell 2 includes an intrinsic semiconductor layer 33, a second conductivity type semiconductor layer 35, and a transparent electrode, which are laminated in order on another part (mainly, the second conductivity type region 8) of the back surface side of the semiconductor substrate 11. It comprises layer 37 and metal electrode layer 38 .

The semiconductor substrate 11, the intrinsic semiconductor layer 13 and the antireflection layer 15 on the light receiving surface side, the intrinsic semiconductor layer 23 on the back surface side, the first conductivity type semiconductor layer 25, the transparent electrode layer 27, the intrinsic semiconductor layer 33, the second conductivity type The semiconductor layer 35 and the transparent electrode layer 37 are also called the solar cell laminate 10 .

Semiconductor substrate 11 is formed of a crystalline silicon material such as monocrystalline silicon or polycrystalline silicon. The semiconductor substrate 11 is, for example, an n-type semiconductor substrate in which a crystalline silicon material is doped with an n-type dopant. Examples of n-type dopants include phosphorus (P).
The semiconductor substrate 11 functions as a photoelectric conversion substrate that absorbs incident light from the light receiving surface side and generates photocarriers (electrons and holes).
Since crystalline silicon is used as the material of the semiconductor substrate 11, dark current is relatively small, and relatively high output (stable output regardless of illuminance) can be obtained even when the intensity of incident light is low.

The semiconductor substrate 11 is one of divided large-sized semiconductor substrates of a predetermined size. A predetermined size is a size determined by a predetermined size (for example, 6 inches) of a semiconductor wafer.
For example, in the case of a 6-inch large-sized semiconductor substrate, the large-sized semiconductor substrate is divided into 4 or more and 10 or less pieces in one predetermined direction.
The long side of the semiconductor substrate 11 is preferably 120 mm or more and 160 mm or less.

The intrinsic semiconductor layer 13 is formed on the light receiving surface side of the semiconductor substrate 11 . The intrinsic semiconductor layer 23 is formed in the first conductivity type region 7 on the back side of the semiconductor substrate 11 . The intrinsic semiconductor layer 33 is formed in the second conductivity type region 8 on the back side of the semiconductor substrate 11 .
The intrinsic semiconductor layers 13, 23, 33 are made of intrinsic (i-type) amorphous silicon material, for example.
The intrinsic semiconductor layers 13, 23, and 33 function as passivation layers, suppress recombination of carriers generated in the semiconductor substrate 11, and enhance carrier recovery efficiency.

An antireflection layer 15 may be formed on the intrinsic semiconductor layer 13 on the light receiving surface side of the semiconductor substrate 11 . The antireflection layer 15 is made of a material such as SiO, SiN, or SiON.

The first conductivity type semiconductor layer 25 is formed on the intrinsic semiconductor layer 23 , that is, in the first conductivity type region 7 on the back side of the semiconductor substrate 11 . The first conductivity type semiconductor layer 25 is made of, for example, an amorphous silicon material. The first conductivity type semiconductor layer 25 is, for example, an n-type semiconductor layer formed by doping an n-type dopant (for example, phosphorus (P) described above) into an amorphous silicon material.

The second conductivity type semiconductor layer 35 is formed on the intrinsic semiconductor layer 33 , that is, in the second conductivity type region 8 on the back side of the semiconductor substrate 11 . The second conductivity type semiconductor layer 35 is made of, for example, an amorphous silicon material. The second conductivity type semiconductor layer 35 is, for example, a p-type semiconductor layer in which an amorphous silicon material is doped with a p-type dopant. Examples of p-type dopants include boron (B).

The first conductivity type semiconductor layer 25 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 35 may be an n-type semiconductor layer.
Semiconductor substrate 11 may also be a p-type semiconductor substrate in which a crystalline silicon material is doped with a p-type dopant (eg, boron (B) as described above).

The transparent electrode layer 27 is formed on the first conductivity type semiconductor layer 25 , that is, in the first conductivity type region 7 on the back side of the semiconductor substrate 11 . The transparent electrode layer 37 is formed on the second-conductivity-type semiconductor layer 35 , that is, in the second-conductivity-type region 8 on the back side of the semiconductor substrate 11 . The transparent electrode layers 27 and 37 are made of a transparent conductive material. Examples of transparent conductive materials include ITO (Indium Tin Oxide: a composite oxide of indium oxide and tin oxide).

The metal electrode layer 28 is formed on the transparent electrode layer 27 , that is, on the first conductivity type region 7 on the back side of the semiconductor substrate 11 . The metal electrode layer 38 is formed on the transparent electrode layer 37 , that is, in the second conductivity type region 8 on the back side of the semiconductor substrate 11 .
The metal electrode layers 28, 38 are made of a metal material. For example, Cu, Ag, Al, and alloys thereof are used as the metal material. The metal electrode layers 28 and 38 are made of a conductive paste material containing metal powder such as silver, for example.

Referring again to FIG. 3 (and FIG. 1), the metal electrode layer 28 has a so-called comb shape, and includes a plurality of finger electrode portions 28f corresponding to comb teeth and busbar electrode portions corresponding to support portions of the comb teeth. 28b. The busbar electrode portion 28b extends in the Y direction along the side portion of the semiconductor substrate 11 on the one end side in the X direction. The finger electrode portions 28f extend in the X direction from the busbar electrode portions 28b.
Similarly, the metal electrode layer 38 has a so-called comb shape, and includes a plurality of finger electrode portions 38f corresponding to comb teeth and busbar electrode portions 38b corresponding to support portions of the comb teeth. The busbar electrode portion 38b extends in the Y direction along the side portion of the semiconductor substrate 11 on the other end side in the X direction. The finger electrode portions 38f extend in the X direction from the busbar electrode portions 38b.

The busbar electrode portion 28b in the metal electrode layer 28 functions as a first electrode to which the connection member 6 is connected.
Similarly, the busbar electrode portion 38b in the metal electrode layer 38 functions as a second electrode to which the connection member 6 is connected.

(Details of solar cell device and connecting member)
FIG. 5 is an enlarged cross-sectional view of the vicinity of the overlapping region Ro of the solar cell device 1 shown in FIG. As shown in FIG. 5, a first electrode 28b is formed on the back surface side of one end side of the solar cell 2 in the X direction, and a second electrode 28b is formed on the back surface side of the other end side of the solar cell 2 in the X direction. Two electrodes 38b are formed. The first electrode 28b has a strip shape extending in the Y direction along one end of the solar cell stack 10 (in other words, the semiconductor substrate 11), that is, along the overlapping region Ro. The second electrode 38b has a strip shape extending in the Y direction along the other end of the solar cell stack 10 (in other words, the semiconductor substrate 11), that is, along the overlapping region Ro.

For example, the width Wo in the X direction of the overlapping region Ro where the solar cells 2 overlap is preferably 0.5 mm or more and 2 mm or less. According to this, there is no gap between the solar cells 2, and the design of the solar cell module 100 is improved.

Further, for example, the width W1 of the first electrode 28b in the X direction and the width W2 of the second electrode 38b in the X direction are preferably 1 mm or more and 2 mm or less. If the size of the electrode is not too large, carriers can be taken out even in the electrode-forming region, and the output of the solar cell module is improved. In addition, if the size of the electrodes is not too small, the adhesion between the electrodes and the connection member is obtained, and the productivity of the solar cell module is improved.

The connection member 6 has a belt shape extending in the Y direction (see FIG. 1) and is arranged so as to straddle the overlap region Ro in the X direction. One end portion of the connection member 6 in the X direction (for example, the left end portion in FIG. 5) is one end side in the X direction of one of the adjacent solar cells 2, 2 (for example, the right end portion in FIG. 5). side) is electrically connected to the first electrode 28b on the back side. The other end of the connection member 6 in the X direction (for example, the right end in FIG. 5) is the other end in the X direction of the other of the adjacent solar cells 2, 2 (for example, the left end in FIG. 5). side) is electrically connected to the second electrode 38b on the back side.

The connection member 6 includes a conductive layer 6a and a resin layer 6b laminated on the solar cell 2 side of the conductive layer 6a, and is in the form of a flexible thin film (film or sheet).
The conductive layer 6a contains a material containing copper as a main component, and has a foil shape with a thickness of 10 μm or more and 50 μm or less. An example of the conductive layer 6a is a tinned copper foil.
The resin layer 6b is made of, for example, a layered resin paste to which conductive particles are added. Here, as the resin paste, for example, an acrylic resin that exhibits adhesiveness at a low temperature (for example, 100 degrees) is used, but an epoxy resin, an imide resin, a phenol resin, or the like may also be used. The thickness of the resin layer 6b is preferably 10 μm or more and 50 μm or less from the viewpoint of ensuring adhesion to the electrodes, and more preferably 10 μm or more and 30 μm or less from the viewpoint of cost.
The conductive particles may be, for example, metal powders such as Ni, Au, Ag, Cu, Zn, or In, or conductive powders such as carbon powders. Furthermore, the conductive particles may be metal powder, or particles made of epoxy, acrylic, polyimide, phenol, etc. coated with a metal film. Among these, Ni particles or Cu particles coated with Ag are more preferable from the viewpoint of cost or reliability. Also, from the viewpoint of cost or ease of processing, the average particle size is 1 μm or more and 30 μm or less, preferably 5 μm or more and 15 μm or less, more preferably about 10 μm.
In short, it is sufficient if the conductive particles are capable of electrically connecting the electrodes 28b and 38b and the conductive layer 6a when the connection member 6 is connected across the first electrode 28b and the second electrode 38b. .
The resin layer 6b may be formed by layering a resin paste that does not contain conductive particles. The connection member 6 including the resin layer 6b containing no conductive particles is suitable for Modification 2 or Modification 3 to be described later.

As described above, according to the solar cell device 1 and the solar cell module 100 of the present embodiment, one end side of one of the adjacent solar cells 2, 2 in the X direction (for example, 2 and 5) is a part of the light-receiving surface side of the other solar cell 2 in the X direction (for example, the left end side in FIGS. 2 and 5). A plurality of photovoltaic cells 2 are electrically connected using a shingling method so as to overlap. As a result, more solar cells 2 can be mounted in the limited solar cell mounting area of the solar cell module 100, the light receiving area for photoelectric conversion is increased, and the output of the solar cell module 100 is improved. . Moreover, there is no gap between the solar cells 2, and the design of the solar cell module 100 is improved.

By the way, when parts of the back electrode type solar cells 2, 2 are overlapped with each other using the shingling method, a step occurs between these solar cells 2, 2, and these solar cells 2, 2 are separated from each other. A step is formed between the first electrode 28b and the second electrode 38b on the back side. Therefore, the connection of these solar cells 2, 2 is not easy, and the productivity is lowered.
For example, generally, a tinned copper wire having a thickness of about 200 μm is known as a connection wire for connecting solar cells. Since such a conventional connection wire is hard, when there is a step between electrodes and the distance between electrodes is short as in the single ring method, the connection wire is easily disconnected, resulting in a decrease in productivity.

In this regard, according to the present embodiment, the connection member 6 is formed of the conductive layer 6a and the resin layer 6b laminated on the solar cell 2 side of the conductive layer 6a. The ends of the connection member 6 are adhered to the first electrode 28b and the second electrode 38b of the solar cell 2 under a low temperature (for example, 100 degrees) environment. Also, the connection member 6 is in the form of a flexible thin film. As a result, even if there is a step between the solar cells 2 and the distance between the electrodes is short as in the shingling method, the connection between the solar cells 2 and 2 is facilitated, and the productivity of the solar cell module 100 is improved. improves.

Here, the thickness of the conductive layer 6a is reduced in order to provide flexibility while providing the resin layer 6b on the connecting member 6. As shown in FIG. Therefore, the resistance loss of the connection member 6 increases, and there is concern that the output of the solar cell module 100 may decrease.
In this regard, according to the present embodiment, the semiconductor substrate of the solar battery cell 2 is one obtained by dividing a large-sized semiconductor substrate of a predetermined size by the singling method. Small current flow. Thereby, even if the film thickness of the conductive layer 6a of the connection member 6 is thin, the resistance loss of the connection member 6 is suppressed, and the output of the solar cell module 100 is improved.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various changes and modifications are possible.

(Modification 1)
In the above-described embodiment, the first electrode (busbar electrode portion) 28b and the second electrode (busbar electrode portion) 38b to which the connection member 6 is connected are arranged in the X direction of the solar cell stack 10 (that is, the semiconductor substrate 11). A belt-like form extending along the one end side and the other end side is exemplified. However, the feature of the present invention is not limited to this. Alternatively, it may include a plurality of island-shaped electrodes (in other words, pad electrodes) spaced apart and arranged along the edge on the other end side.

(Modification 2)
In the above-described embodiment, at least one of the first electrode 28b and the second electrode 38b may have a surface roughness of arithmetic mean roughness Ra=1 μm or more and 10 μm or less. According to this, when the connection member 6 is connected to the first electrode 28b or the second electrode 38b, a part of the surface of the first electrode 28b or the second electrode 38b passes through the resin layer 6b to reach the conductive layer 6a. reach. Therefore, the contact resistance between the connection member 6 and the first electrode 28b or the second electrode 38b is reduced, and the output of the solar cell module 100 is improved. Moreover, in the case of the electrodes 28b and 38b having such surface roughness, the connection member 6 including the resin layer 6b containing no conductive particles may be used.

(Modification 3)
In the above-described embodiment, the resin layer 6b of the connecting member 6 may have a plurality of openings 6h spaced apart from each other on the surface of the connecting member 6, as shown in FIG. 6A. According to this, when the connection member 6 is connected to the first electrode 28b or the second electrode 38b, a part of the surface of the first electrode 28b or the second electrode 38b does not touch the conductive layer 6a in the opening 6h of the resin layer 6b. Contact. Therefore, the contact resistance between the connection member 6 and the first electrode 28b or the second electrode 38b is reduced, and the output of the solar cell module 100 is improved.

For example, as shown in FIG. 6B, an opening 6h may be formed in the resin layer 6b by pressing from the conductive layer 6a side. In this case, a portion of the conductive layer 6a is inserted into the opening 6h of the resin layer 6b, and a portion of the conductive layer 6a is exposed on the surface of the resin layer 6b. According to this, when the connection member 6 is connected to the first electrode 28b or the second electrode 38b, a part of the conductive layer 6a contacts the first electrode 28b or the second electrode 38b in the opening 6h of the resin layer 6b. . Therefore, the contact resistance between the connection member 6 and the first electrode 28b or the second electrode 38b is reduced, and the output of the solar cell module 100 is improved. Moreover, as long as the connection member 6 includes the resin layer 6b having such openings 6h, the connection member 6 including the resin layer 6b that does not contain the above-described conductive particles may be used.

(Modification 4)
In the above-described embodiment, as shown in FIG. 7, the connection member 6 has one end and the other end, except for one end connected to the first electrode 28b and the other end connected to the second electrode 38b. An insulating layer 6c laminated on the side of the solar cell 2 may be further provided in a portion between the portions. This prevents electrical contact between the connection member 6 and the solar cell 2 when the connection member 6 is connected to the first electrode 28b and the second electrode 38b. Therefore, productivity of the solar cell module 100 is further improved.

Further, in the above-described embodiment, the solar cell module 100 includes a single solar cell device 1, but the solar cell module 100 includes a plurality of solar cell devices 1 arranged in the Y direction, for example. good too.

Moreover, in the embodiment described above, the solar cell device 1 including the heterojunction solar cell 2 is illustrated as shown in FIG. However, the present invention is not limited to this, and can be applied to solar cell devices including various solar cells such as homojunction solar cells.

Moreover, in the embodiment described above, the form in which the longitudinal ends of the solar cells 2 are overlapped has been exemplified. However, the present invention is not limited to this, and can be applied to the case where the short ends of the solar cells are overlapped.

REFERENCE SIGNS LIST 1 solar battery device 2 solar battery cell 3 light receiving side protective member 4 back side protective member 5 sealing material 6 connecting member 6a conductive layer 6b resin layer 6c insulating layer 7 first conductivity type region 8 second conductivity type region 7b, 8b busbar portion 7f, 8f finger portion 10 solar cell laminate 11 semiconductor substrate 13, 23, 33 intrinsic semiconductor layer 25 first conductivity type semiconductor layer 27 transparent electrode layer 28 metal electrode layer 28b busbar electrode portion (first electrode)
28f finger electrode portion 35 second conductivity type semiconductor layer 37 transparent electrode layer 38 metal electrode layer 38b busbar electrode portion (second electrode)
38f finger electrode portion 100 solar cell module Ro overlapping region

Claims (10)

A solar cell device comprising a plurality of solar cells electrically connected by connecting members,
A part of one main surface side of one end side of one of the adjacent solar cells in the plurality of solar cells is the one of the adjacent solar cells of the other solar cell. It overlaps under a part of the other main surface side opposite to the one main surface side on the other end side opposite to the one end side,
Each of the plurality of photovoltaic cells includes a semiconductor substrate, a first conductivity type semiconductor layer formed on a portion of the semiconductor substrate on the other main surface side, and a semiconductor layer on the other main surface side of the semiconductor substrate. a second conductivity type semiconductor layer partially formed; a first electrode formed on the other main surface side of the one end side corresponding to the first conductivity type semiconductor layer; and the second conductivity type semiconductor a back electrode type solar cell comprising a second electrode arranged on the other main surface side of the other end side corresponding to the layer,
The connection member has a strip shape composed of a conductive layer and a resin layer laminated on the solar cell side of the conductive layer,
The connecting member is arranged to straddle an overlapping region where a part of the one solar cell and a part of the other solar cell overlap,
One end of the connection member is electrically connected to the first electrode of the one solar cell, and the other end of the connection member is electrically connected to the second electrode of the other solar cell. is connected to
the resin layer in the connection member includes a plurality of openings spaced apart on the surface of the connection member;
a portion of the conductive layer is inserted into each of the plurality of openings of the resin layer;
part of the conductive layer is exposed on the surface of the resin layer in each of the plurality of openings of the resin layer;
solar device. The connecting member is in the form of a flexible thin film,
The semiconductor substrate is one of divided large-sized semiconductor substrates of a predetermined size,
A solar cell device according to claim 1 . The semiconductor substrate has a rectangular shape with long sides and short sides,
The long side is 120 mm or more and 160 mm or less,
The long side/short side ratio is 2 or more and 10 or less,
3. The solar cell device of claim 2. At least one of the first electrode and the second electrode connected by the connection member is a strip-shaped electrode extending along the one end side or the other end side of the semiconductor substrate, The solar cell device according to any one of claims 1-3 . At least one of the first electrode and the second electrode connected by the connection member is a plurality of islands spaced apart along the one end side or the other end side of the semiconductor substrate. A solar cell device according to any one of claims 1 to 3 , comprising shaped electrodes. The solar cell device according to any one of claims 1 to 5 , wherein said conductive layer in said connecting member is foil-shaped with a thickness of 10 µm or more and 50 µm or less. The solar cell device according to any one of claims 1 to 6 , wherein said conductive layer in said connecting member comprises a material containing copper as a main component. The solar cell device according to any one of claims 1 to 7 , wherein at least one of said first electrode and said second electrode has a surface roughness of arithmetic mean roughness Ra = 1 µm or more and 10 µm or less. 9. The connection member according to any one of claims 1 to 8 , wherein the connecting member includes an insulating layer laminated on the solar cell side of the resin layer at a portion between the one end and the other end. The solar cell device according to . A solar cell module comprising one or more solar cell devices according to any one of claims 1-9 .

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