CN112640135B - Solar cell device and solar cell module - Google Patents
Solar cell device and solar cell module Download PDFInfo
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- CN112640135B CN112640135B CN201980057530.0A CN201980057530A CN112640135B CN 112640135 B CN112640135 B CN 112640135B CN 201980057530 A CN201980057530 A CN 201980057530A CN 112640135 B CN112640135 B CN 112640135B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention provides a solar cell device capable of improving output, appearance design and productivity. The solar cell device (1) is provided with a plurality of solar cells (2). Among the plurality of solar cells, a part of one principal surface side of one solar cell (2) of adjacent solar cells is overlapped under a part of the other principal surface side of the other solar cell (2), and the solar cell (2) is a back electrode type solar cell which is provided with a first electrode (28 b) formed on the other principal surface side of the one end side corresponding to the first conductive type semiconductor layer and a second electrode (38 b) arranged on the other principal surface side of the other end side corresponding to the second conductive type semiconductor layer. The connection member (6) is formed in a strip shape composed of a conductive layer (6 a) and a resin layer (6 b) laminated on the solar cell side of the conductive layer, one end of the connection member (6) is connected to a first electrode (28 b) of one solar cell, and the other end of the connection member (6) is connected to a second electrode (38 b) of the other solar cell.
Description
Technical Field
The present invention relates to a solar cell device and a solar cell module including the same.
Background
Recently, when a solar cell with two-sided electrode is modularized, there is a method in which a part of solar cells are overlapped with each other without using a conductive connection line, thereby directly performing electrical connection and physical connection. Such a connection method is called a shingle method, and a plurality of solar cells electrically connected by the shingle method are called a solar cell string (solar cell device) (for example, refer to patent document 1).
In a solar cell string (solar cell device), more solar cells can be mounted in a limited solar cell mounting area in a solar cell module, and a light receiving area for photoelectric conversion increases, thereby improving an output of the solar cell module. In addition, in the solar cell string (solar cell device), no gap is generated between the solar cells, thereby improving the design of the solar cell module.
Patent document 1: japanese patent laid-open No. 2017-517145
From the viewpoints of improving output and improving design, when the back electrode type solar cell is modularized, a method of overlapping and connecting a part of the solar cells to each other by using a shingle method has been studied.
However, when a part of the back electrode type solar cells are stacked with each other by using the shingle method, a step occurs between the solar cells, and a step occurs between the electrodes on the back side of the solar cells. Therefore, connection of these solar cell units is not easy, resulting in a decrease in productivity of the solar cell module.
Disclosure of Invention
The invention aims to provide a solar cell device capable of improving output, appearance design and productivity and a solar cell module provided with the solar cell device.
The solar cell device according to the present invention includes a plurality of solar cells electrically connected by a connection member, a portion of one principal surface side of one of adjacent solar cells among the plurality of solar cells being overlapped with a portion of the other principal surface side of the other of the adjacent solar cells opposite to the one principal surface side, each of the plurality of solar cells being a back electrode type solar cell, the solar cell including: a semiconductor substrate; a first conductivity type semiconductor layer formed on a part of the semiconductor substrate on the other main surface side; a second conductivity type semiconductor layer formed on the other portion of the semiconductor substrate on the other principal surface side; a first electrode formed on the other main surface side of the one end side in correspondence with the first conductive semiconductor layer; and a second electrode arranged on the other main surface side of the second conductive semiconductor layer, wherein the connection member is formed in a belt shape composed of a conductive layer and a resin layer laminated on the conductive layer and the solar cell side, one end of the connection member is electrically connected with the first electrode of one solar cell, and the other end of the connection member is electrically connected with the second electrode of the other solar cell.
The solar cell module according to the present invention includes the single or a plurality of solar cell devices described above.
According to the present invention, the output of the solar cell module is improved, the design of the solar cell module is improved, and the productivity of the solar cell module is improved.
Drawings
Fig. 1 is a view of a solar cell module including a solar cell device according to the present embodiment, as viewed from the back side.
Fig. 2 is a cross-sectional view of the solar cell module shown in fig. 1 taken along line II-II.
Fig. 3 is a view of the solar cell device shown in fig. 1 and 2, as seen from the back side.
Fig. 4 is a cross-sectional view of the solar cell unit shown in fig. 3 taken along line IV-IV.
Fig. 5 is an enlarged cross-sectional view of the vicinity of the overlapping region of the solar cell device shown in fig. 2.
Fig. 6A is a view of the connecting member according to the modification of the present embodiment, as viewed from the resin layer side.
Fig. 6B is a cross-sectional view taken along line VIB-VIB of the connecting means shown in fig. 6A.
Fig. 7 is an enlarged cross-sectional view of the vicinity of the overlapping region of the solar cell device according to the modification of the present embodiment.
Detailed Description
An example of an embodiment of the present invention will be described below with reference to the drawings. In addition, the same or corresponding portions in the drawings are denoted by the same reference numerals. For convenience, hatching, component reference numerals, and the like may be omitted, and in the above case, reference is made to other drawings.
(solar cell Module)
Fig. 1 is a view of a solar cell module including a solar cell device according to the present embodiment, as viewed from the back side, and fig. 2 is a cross-sectional view taken along line II-II of the solar cell module shown in fig. 1. In fig. 1, the light receiving side protection member 3, the back side protection member 4, and the seal 5, which will be described later, are omitted, and a connection member 6, which will be described later, is shown in perspective. As shown in fig. 1 and 2, the solar cell module 100 includes a solar cell device (also referred to as a solar cell string) 1 in which a plurality of rectangular back electrode type solar cells 2 are electrically connected by a shingle method.
The solar cell device 1 is sandwiched between the light receiving side protective member 3 and the back side protective member 4. The solar cell device 1 is sealed by filling a liquid or solid sealing material 5 between the light receiving side protective member 3 and the back side protective member 4.
The sealing material 5 seals and protects the solar cell device 1, that is, the solar cell 2, and is interposed between the light receiving side surface of the solar cell 2 and the light receiving side protection member 3, and between the back side surface of the solar cell 2 and the back side protection member 4.
The shape of the seal 5 is not particularly limited, and examples thereof include a sheet shape. This is because, if the solar cell 2 is in the form of a sheet, the front and rear surfaces of the solar cell 2 are easily coated.
The material of the seal 5 is not particularly limited, but is preferably a material having a property of transmitting light (light transmittance). The material of the sealing material 5 preferably has adhesion properties for adhering the solar cell 2, the light-receiving-side protective member 3, and the back-side protective member 4.
Examples of such a material include light-transmitting resins such as ethylene/vinyl acetate copolymer (EVA), ethylene/α -olefin copolymer, ethylene/vinyl acetate/triallyl isocyanurate (EVAT), polyvinyl butyral (PVB), acrylic resin, urethane resin, and silicone resin.
The light receiving side protection member 3 covers the solar cell device 1, that is, covers the surface (light receiving surface) of the solar cell 2 via the sealing material 5, and protects the solar cell 2.
The shape of the light-receiving-side protective member 3 is not particularly limited, but is preferably a plate or sheet from the point of indirectly covering the light-receiving surface in a planar shape.
The material of the light receiving side protective member 3 is not particularly limited, but is preferably a material having light transmittance and ultraviolet light resistance, like the sealing material 5, and examples thereof include glass, and transparent resins such as acrylic resins and polycarbonate resins. The surface of the light receiving side protective member 3 may be roughened or covered with an antireflection coating. This is because, if the light receiving side protection member 3 is configured in this way, it is not easy to reflect the received light, and more light is guided to the solar cell device 1.
The back-side protection member 4 covers the solar cell device 1, that is, covers the back surface of the solar cell 2 via the sealing material 5, and protects the solar cell 2.
The shape of the back-side protection member 4 is not particularly limited, but is preferably a plate or sheet shape in view of indirectly covering the surface-like back surface, as in the light-receiving-side protection member 3.
The material of the back-side protection member 4 is not particularly limited, but is preferably a material that prevents penetration of water or the like (high water blocking property). Examples thereof include polyethylene terephthalate (PET), polyethylene (PE), an olefin resin, a fluorine-containing resin, and a laminate of a resin film such as a silicon-containing resin and a metal foil such as an aluminum foil.
(solar cell device)
In the solar cell device 1, the solar cells 2 are connected in series by overlapping a part of the ends of the solar cells 2. Specifically, a part of one principal surface side (for example, light receiving surface side) of one of the adjacent solar cells 2, 2 in the X direction (for example, right end side in fig. 2) is overlapped with a part of the other principal surface side (for example, back surface side) of the other principal surface side (for example, other principal surface side opposite to the one principal surface side) of the other solar cell 2 in the X direction (for example, other principal surface side opposite to the one principal surface side in fig. 2) of the other side opposite to the one end side. A first electrode (described later) extending in the Y direction is formed on the rear surface side of one end side of the solar cell 2, and a second electrode (described later) extending in the Y direction is formed on the rear surface side of the other end side of the solar cell 2. The first electrode on the back surface side of one end side of one solar cell 2 is electrically connected to the second electrode on the back surface side of the other end side of the other solar cell 2 via the connection member 6.
In this way, since a stacked structure in which a plurality of solar cells 2 are uniformly inclined in a certain direction is formed as if the solar cells 2 are tiled on a roof, a system of electrically connecting the solar cells 2 in this way is called a tiling system. The plurality of solar cells 2 connected in a band shape are called a solar cell string (solar cell device).
The region where adjacent solar cells 2, 2 overlap is hereinafter referred to as an overlap region Ro.
The details of the solar cell device 1 and the connection member 6 will be described later. The solar cell 2 of the solar cell device 1 will be described below.
(solar cell unit)
Fig. 3 is a view of the solar cell 2 of the solar cell device 1 shown in fig. 1 and 2, as seen from the back side. The solar cell 2 shown in fig. 3 is a rectangular back electrode type solar cell. The solar cell 2 includes a semiconductor substrate 11, and the semiconductor substrate 11 has two main surfaces on one main surface side (for example, light-receiving surface side) and the opposite other main surface side (for example, back surface side), and the other main surface side of the semiconductor substrate 11 has a first conductivity type region 7 and a second conductivity type region 8.
The first conductivity type region 7 has a so-called comb shape, and has a plurality of finger portions 7f corresponding to comb teeth and a bus bar portion 7b corresponding to a support portion of the comb teeth. The bus bar portion 7b extends in the Y direction (second direction) along one side portion of the semiconductor substrate 11, and the finger portion 7f extends from the bus bar portion 7b in the X direction (first direction) intersecting the Y direction.
Similarly, the second conductivity type region 8 has a so-called comb shape, and has a plurality of finger portions 8f corresponding to comb teeth and a bus bar portion 8b corresponding to a support portion of the comb teeth. The bus bar portion 8b extends in the Y direction along the other side portion of the semiconductor substrate 11 that faces the one side portion, and the finger portion 8f extends from the bus bar portion 8b in the X direction.
The finger portions 7f and the finger portions 8f are alternately arranged in the Y direction.
The first conductivity type region 7 and the second conductivity type region 8 may be formed in a stripe shape.
Fig. 4 is a cross-sectional view taken along line IV-IV of the solar cell unit 2 shown in fig. 3. As shown in fig. 4, the solar cell 2 includes an intrinsic semiconductor layer 13 and an antireflection layer 15, which are sequentially stacked on a light-receiving surface side, which is a main surface on the light-receiving side of the main surface of the semiconductor substrate 11. The solar cell 2 includes an intrinsic semiconductor layer 23, a first conductivity type semiconductor layer 25, a transparent electrode layer 27, and a metal electrode layer 28, which are sequentially stacked on a portion (mainly the first conductivity type region 7) of a back surface side (main surface) which is a main surface (other main surface) opposite to the light receiving surface of the main surface of the semiconductor substrate 11. The solar cell 2 includes an intrinsic semiconductor layer 33, a second conductivity type semiconductor layer 35, a transparent electrode layer 37, and a metal electrode layer 38, which are sequentially stacked on the other portion (mainly the second conductivity type region 8) of the back surface side of the semiconductor substrate 11.
The semiconductor substrate 11, the light-receiving-surface-side intrinsic semiconductor layer 13 and the antireflection layer 15, the back-surface-side intrinsic semiconductor layer 23, the first conductivity-type semiconductor layer 25, the transparent electrode layer 27, the intrinsic semiconductor layer 33, the second conductivity-type semiconductor layer 35, and the transparent electrode layer 37 are also referred to as a solar cell laminate 10.
The semiconductor substrate 11 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon. The semiconductor substrate 11 is, for example, an n-type semiconductor substrate in which an n-type dopant is doped in a crystalline silicon material. As the n-type dopant, phosphorus (P) is exemplified.
The semiconductor substrate 11 functions as a photoelectric conversion substrate that absorbs incident light from the light receiving surface side and generates photocarriers (electrons and holes).
By using crystalline silicon as a material of the semiconductor substrate 11, even in the case where the dark current is relatively small, the intensity of incident light is low, a high output (stable output without being affected by the light emission intensity) can be obtained.
The semiconductor substrate 11 is one of large-sized semiconductor substrates having a predetermined size divided. The prescribed size refers to a size determined by a prescribed size (e.g., 6 inches) of the semiconductor wafer.
For example, in the case of a 6-inch large-sized semiconductor substrate, the large-sized semiconductor substrate is divided into four or more and 10 or less in a predetermined one direction.
The long side of the semiconductor substrate 11 is preferably 120mm to 160mm, and the ratio of the long side to the short side, which is the ratio of the long side to the short side of the semiconductor substrate 11, is preferably 2 to 10.
The intrinsic semiconductor layer 13 is formed on the light receiving surface side of the semiconductor substrate 11. The intrinsic semiconductor layer 23 is formed on the first conductivity type region 7 on the back surface side of the semiconductor substrate 11. The intrinsic semiconductor layer 33 is formed on the second conductivity type region 8 on the back surface side of the semiconductor substrate 11.
The intrinsic semiconductor layers 13, 23, 33 are formed of, for example, an intrinsic (i-type) amorphous silicon material.
The intrinsic semiconductor layers 13, 23, and 33 function as passivation layers, suppressing recombination of carriers generated on the semiconductor substrate 11, and improving the recovery efficiency of carriers.
An anti-reflection layer 15 may be formed on the intrinsic semiconductor layer 13 on the light receiving surface side of the semiconductor substrate 11. The antireflection layer 15 is formed of, for example, siO, siN, siON, or the like.
The first conductivity type semiconductor layer 25 is formed on the intrinsic semiconductor layer 23, i.e., the first conductivity type region 7 formed on the back surface side of the semiconductor substrate 11. The first conductivity type semiconductor layer 25 is formed of, for example, an amorphous silicon material. The first conductivity type semiconductor layer 25 is, for example, an n-type semiconductor layer in which an amorphous silicon material is doped with an n-type dopant (for example, phosphorus (P) described above).
The second conductivity type semiconductor layer 35 is formed on the intrinsic semiconductor layer 33, that is, the second conductivity type region 8 formed on the back surface side of the semiconductor substrate 11. The second conductivity type semiconductor layer 35 is formed of, for example, an amorphous silicon material. The second conductivity type semiconductor layer 35 is, for example, a p-type semiconductor layer doped with a p-type dopant in an amorphous silicon material. As the p-type dopant, boron (B) is exemplified.
The first conductive semiconductor layer 25 may be a p-type semiconductor layer, and the second conductive semiconductor layer 35 may be an n-type semiconductor layer.
The semiconductor substrate 11 may be a p-type semiconductor substrate in which a p-type dopant (e.g., boron (B) described above) is doped in a crystalline silicon material.
The transparent electrode layer 27 is formed on the first conductivity type semiconductor layer 25, that is, the first conductivity type region 7 formed on the back surface side of the semiconductor substrate 11. The transparent electrode layer 37 is formed on the second conductivity type semiconductor layer 35, that is, the second conductivity type region 8 formed on the back surface side of the semiconductor substrate 11. The transparent electrode layers 27 and 37 are formed of a transparent conductive material. The transparent conductive material may be ITO (Indium Tin Oxide: composite Oxide of Indium Oxide and Tin Oxide).
The metal electrode layer 28 is formed on the transparent electrode layer 27, i.e., the first conductivity type region 7 formed on the back surface side of the semiconductor substrate 11. The metal electrode layer 38 is formed on the transparent electrode layer 37, that is, on the second conductivity type region 8 on the back surface side of the semiconductor substrate 11.
The metal electrode layers 28, 38 are formed of a metal material. As the metal material, cu, ag, al, and an alloy thereof can be used, for example. The metal electrode layers 28 and 38 are formed of, for example, a conductive paste material containing a metal powder such as silver.
Referring again to fig. 3 (and fig. 1), the metal electrode layer 28 has a so-called comb shape, and includes a plurality of finger electrode portions 28f corresponding to the teeth of the comb and bus electrode portions 28b corresponding to the support portions of the teeth of the comb. The bus electrode portion 28b extends in the Y direction along a side portion of one end side of the semiconductor substrate 11 in the X direction. The finger electrode portion 28f extends from the bus bar electrode portion 28b in the X direction.
Similarly, the metal electrode layer 38 has a so-called comb shape, and includes a plurality of finger electrode portions 38f corresponding to the teeth of the comb and bus electrode portions 38b corresponding to the support portions of the teeth of the comb. The bus electrode portion 38b extends in the Y direction along the edge portion on the other end side in the X direction of the semiconductor substrate 11. The finger electrode portion 38f extends from the bus bar electrode portion 38b in the X direction.
The bus bar electrode portion 28b of the metal electrode layer 28 functions as a first electrode connected to the connection member 6.
Similarly, the bus bar electrode portion 38b of the metal electrode layer 38 functions as a second electrode connected to the connection member 6.
(details of solar cell device and connection Member)
Fig. 5 is an enlarged cross-sectional view of the vicinity of the overlapping region Ro of the solar cell device 1 shown in fig. 2. As shown in fig. 5, the first electrode 28b is formed on the back surface side of one end side in the X direction of the solar cell 2, and the second electrode 38b is formed on the back surface side of the other end side in the X direction of the solar cell 2. The first electrode 28b has a strip shape extending in the Y direction along one end side of the solar cell laminate 10 (in other words, the semiconductor substrate 11), that is, along the overlapping region Ro. The second electrode 38b has a strip shape extending in the Y direction along the other end side end of the solar cell laminate 10 (in other words, the semiconductor substrate 11), that is, along the overlapping region Ro.
For example, the width Wo in the X direction of the overlapping region Ro where the solar cells 2 overlap is preferably 0.5mm or more and 2mm or less. As a result, no gap is generated between the solar cells 2, and the design of the solar cell module 100 is improved.
For example, the width W1 of the first electrode 28b in the X direction and the width W2 of the second electrode 38b in the X direction are preferably 1mm to 2 mm. If the electrode size is not too large, carriers are taken out also in the electrode formation region, and the output of the solar cell module is improved. In addition, if the size of the electrode is not too small, the adhesion between the electrode and the connection member can be obtained, and the productivity of the solar cell module can be improved.
The connection member 6 has a strip shape extending in the Y direction (see fig. 1) and is disposed so as to cross the overlap region Ro in the X direction. One end (for example, the left end in fig. 5) of the connecting member 6 in the X direction is electrically connected to the first electrode 28b on the back surface side of one end (for example, the right end in fig. 5) of the adjacent solar cell 2 in the X direction of one solar cell 2 of the adjacent solar cells 2. The other end portion (for example, the right end portion in fig. 5) in the X direction of the connection member 6 is electrically connected to the second electrode 38b on the back surface side of the other end side (for example, the left end side in fig. 5) in the X direction of the other solar cell 2 out of the adjacent solar cells 2, 2.
The connection member 6 includes a conductive layer 6a and a resin layer 6b laminated on the solar cell 2 side of the conductive layer 6a, and has a flexible film shape (film shape or sheet shape).
The conductive layer 6a is formed in a foil shape having a thickness of 10 μm or more and 50 μm or less, and contains a material containing copper as a main component. As an example of the conductive layer 6a, a tin-plated copper foil is cited.
The resin layer 6b is formed by, for example, forming a resin paste containing conductive particles into a layer. Here, as the resin paste, a material exhibiting adhesiveness at a low temperature (for example, 100 degrees) is used, for example, an acrylic resin, but may be an epoxy resin, an imide resin, a phenolic resin, or the like. The thickness of the resin layer 6b is preferably 10 μm or more and 50 μm or less from the viewpoint of reliable adhesion to the electrode, and more preferably 10 μm or more and 30 μm or less from the viewpoint of cost.
The conductive particles may be, for example, metal powder such as Ni, au, ag, cu, zn or In, conductive powder such as carbon powder, or the like. The conductive particles may be formed by coating the surfaces of particles made of metal powder, epoxy, acrylic, polyimide, phenolic, or the like with a metal film. Among them, particles in which Ni particles or Cu particles are coated with Ag are more preferable from the viewpoint of cost and reliability. In addition, from the viewpoint of cost and ease of processing, the average particle diameter is 1 μm or more and 30 μm or less, preferably 5 μm or more and 15 μm or less, and more preferably about 10 μm.
In short, when the connection member 6 is connected to the first electrode 28b and the second electrode 38b so as to be bridged, the connection member may be any conductive particle that can electrically connect the electrodes 28b and 38b to the conductive layer 6a.
The resin layer 6b may be a resin layer in which a resin paste containing no conductive particles is formed in a layered shape. The connection member 6 including the resin layer 6b containing no conductive particles is applied to modification 2 or modification 3 described later.
As described above, according to the solar cell device 1 and the solar cell module 100 of the present embodiment, the plurality of solar cells 2 are electrically connected by the shingle method so that a portion of the light-receiving surface side of one solar cell 2 (for example, the right side in fig. 2 and 5) of the adjacent solar cells 2, 2 is overlapped with a portion of the back surface side of the other solar cell 2 (for example, the left side in fig. 2 and 5) in the X direction. As a result, more solar cells 2 can be mounted on a limited solar cell mounting area in the solar cell module 100, and the light receiving area for photoelectric conversion increases, thereby improving the output of the solar cell module 100. In addition, no gap is generated between the solar cells 2, and thus the design of the solar cell module 100 is improved.
However, when the back electrode type solar cells 2 and 2 are partially overlapped with each other by the shingle method, a step occurs between the solar cells 2 and 2, and a step occurs between the first electrode 28b and the second electrode 38b on the back side of the solar cells 2 and 2. Therefore, connection of these solar battery cells 2, 2 is not easy, resulting in a decrease in productivity.
For example, a tin-plated copper wire having a thickness of about 200 μm is generally known as a connection wire for connecting solar cells to each other. Since such a conventional connecting wire is hard, a step is formed between the electrodes like the shingle method, and when the distance between the electrodes is short, the connecting wire is easily detached, which results in a reduction in productivity.
In this regard, according to the present embodiment, since the connection member 6 is formed of the conductive layer 6a and the resin layer 6b laminated on the solar cell 2 side of the conductive layer 6a, the end portion of the connection member 6 is bonded to the first electrode 28b and the second electrode 38b of the solar cell 2 in a relatively low temperature (for example, 100 degrees) environment through the resin layer 6 b. The connection member 6 has a flexible film shape. As a result, even if there is a step between the solar cells 2 and 2 as in the shingle method, the distance between the electrodes is short, and the connection between the solar cells 2 and 2 is easy, thereby improving the productivity of the solar cell module 100.
Here, in order to provide the resin layer 6b on the connection member 6 and to provide flexibility to the connection member 6, the film thickness of the conductive layer 6a is made thin. Therefore, there is a concern that the resistance loss of the connection member 6 increases and the output of the solar cell module 100 decreases.
In this regard, according to the present embodiment, the semiconductor substrate of the solar cell 2 is one of the large-sized semiconductor substrates having a predetermined size, and thus the current flowing through each connection member 6 is small. Thus, even if the film thickness of the conductive layer 6a of the connection member 6 is reduced, the resistance loss of the connection member 6 can be suppressed, and the output of the solar cell module 100 can be improved.
The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments and various modifications and variations are possible.
Modification 1
In the above embodiment, the first electrode (bus bar electrode portion) 28b and the second electrode (bus bar electrode portion) 38b connected to the connection member 6 are illustrated as being in the form of a strip extending along the ends of one end side and the other end side in the X direction of the solar cell laminate 10 (i.e., the semiconductor substrate 11). However, the feature of the present invention is not limited to this, and at least one of the first electrode and the second electrode connected to the connection member may include a plurality of island-shaped electrodes (in other words, pad electrodes) arranged along one end side or the other end side of the X-direction of the solar cell laminate (i.e., semiconductor substrate) in a separated manner.
Modification 2
In the above embodiment, at least one of the first electrode 28b and the second electrode 38b may have a surface roughness having an arithmetic average roughness ra=1 μm or more and 10 μm or less. Thus, when the connection member 6 is connected to the first electrode 28b or the second electrode 38b, a part of the surface of the first electrode 28b or the second electrode 38b passes through the resin layer 6b and reaches the conductive layer 6a. Therefore, the contact resistance between the connection member 6 and the first electrode 28b or the second electrode 38b can be reduced, and the output of the solar cell module 100 can be improved. In addition, if the electrodes 28b, 38b have such surface roughness, the connection member 6 including the resin layer 6b containing no conductive particles may be used.
Modification 3
In the above embodiment, as shown in fig. 6A, the resin layer 6b of the connection member 6 may have a plurality of openings 6h provided separately on the surface of the connection member 6. Thus, when the connection member 6 is connected to the first electrode 28b or the second electrode 38b, a part of the surface of the first electrode 28b or the second electrode 38b contacts the conductive layer 6a at the opening 6h of the resin layer 6 b. Therefore, the contact resistance between the connection member 6 and the first electrode 28b or the second electrode 38b can be reduced, and the output of the solar cell module 100 can be improved.
For example, as shown in fig. 6B, the opening 6h may be formed in the resin layer 6B by pressing from the conductive layer 6a side. In this case, a part of the conductive layer 6a is inserted into the opening 6h of the resin layer 6b, and a part of the conductive layer 6a is exposed on the surface of the resin layer 6 b. Thus, when the connection member 6 is connected to the first electrode 28b or the second electrode 38b, a part of the conductive layer 6a is in contact with the first electrode 28b or the second electrode 38b at the opening 6h of the resin layer 6 b. Therefore, the contact resistance between the connection member 6 and the first electrode 28b or the second electrode 38b can be reduced, and the output of the solar cell module 100 can be improved. In addition, if the connection member 6 includes such a resin layer 6b having the opening 6h, the connection member 6 including the resin layer 6b containing no conductive particles described above may be used.
Modification 4
In the above embodiment, as shown in fig. 7, the connection member 6 may further include an insulating layer 6c laminated on the solar cell 2 side in a portion between one end portion and the other end portion other than the one end portion connected to the first electrode 28b and the other end portion connected to the second electrode 38b. This can prevent the connection member 6 from making electrical contact with the solar cell 2 when the connection member 6 is connected to the first electrode 28b and the second electrode 38b. Therefore, the productivity of the solar cell module 100 is further improved.
In the above embodiment, the solar cell module 100 has been described as having a single solar cell device 1, but the solar cell module 100 may have a plurality of solar cell devices 1 arranged in the Y direction, for example.
In the above embodiment, the solar cell device 1 including the heterojunction solar cell 2 shown in fig. 4 is exemplified. However, the present invention is not limited to this, and can be applied to a solar cell device including various solar cells such as homojunction solar cells.
In the above embodiment, the long side ends of the solar cells 2 are overlapped. However, the present invention is not limited to this, and can be applied to a case where short side ends of solar cells are overlapped.
Description of the reference numerals
1 … solar cell device; 2 … solar cell units; 3 … light receiving side protective member; 4 … backside protection component; 5 … seal; 6 … connection parts; 6a … conductive layer; 6b … resin layer; 6c … insulating layer; 7 … first conductivity type region; 8 … second conductivity type region; 7b, 8b … busbar portions; 7f, 8f … fingers; 10 … solar cell laminate; 11 … semiconductor substrate; 13. 23, 33, … intrinsic semiconductor layers; 25 … a first conductive semiconductor layer; 27 … transparent electrode layer; 28 … metal electrode layer; 28b … busbar electrode portion (first electrode); 28f … finger electrode portions; 35 … a second-conductivity-type semiconductor layer; 37 … transparent electrode layer; 38 … metal electrode layer; 38b … bus electrode portion (second electrode); 38f … finger electrode portions; 100 … solar cell module; ro … overlap region.
Claims (10)
1. A solar cell device comprising a plurality of solar cells electrically connected by a connecting member, characterized in that,
a part of one principal surface side of one of the adjacent solar cells is overlapped under a part of the other principal surface side of the other of the adjacent solar cells, which is opposite to the one principal surface side,
each of the plurality of solar cells is a back electrode type solar cell, and the solar cell includes: a semiconductor substrate; a first conductivity type semiconductor layer formed on a part of the semiconductor substrate on the other main surface side; a second conductive semiconductor layer formed on the other portion of the semiconductor substrate on the other principal surface side; a first electrode formed on the other main surface side of the one end side in correspondence with the first conductive semiconductor layer; and a second electrode disposed on the other main surface side of the other end side in correspondence with the second conductive semiconductor layer,
the connection member is formed in a band shape composed of a conductive layer and a resin layer laminated on the solar cell side of the conductive layer,
the connection member is configured to span an overlapping region where a portion of the one solar cell unit overlaps a portion of the other solar cell unit,
one end of the connecting member is electrically connected to the first electrode of the one solar cell, the other end of the connecting member is electrically connected to the second electrode of the other solar cell,
the resin layer of the connection member includes a plurality of openings separately provided at a surface of the connection member,
a portion of the conductive layer is inserted into each of the plurality of openings of the resin layer,
in each of the plurality of openings of the resin layer, a portion of the conductive layer is exposed at a surface of the resin layer.
2. The solar cell device according to claim 1, wherein,
the connecting component is in a flexible film shape,
the semiconductor substrate is one of large-size semiconductor substrates having a predetermined size divided.
3. The solar cell device according to claim 2, wherein,
the semiconductor substrate is rectangular with long sides and short sides,
the long side is 120mm to 160mm,
the ratio of the long side to the short side is 2 or more and 10 or less.
4. The solar cell device according to any one of claim 1 to 3, wherein,
at least one of the first electrode and the second electrode connected to the connection member is a strip-shaped electrode extending along an end portion of the one end side or the other end side of the semiconductor substrate.
5. The solar cell device according to any one of claim 1 to 3, wherein,
at least one of the first electrode and the second electrode connected to the connection member includes a plurality of island-shaped electrodes arranged along an end portion of the one end side or the other end side of the semiconductor substrate.
6. The solar cell device according to any one of claim 1 to 3, wherein,
the conductive layer of the connection member is foil-shaped having a thickness of 10 μm or more and 50 μm or less.
7. The solar cell device according to any one of claim 1 to 3, wherein,
the conductive layer of the connection member contains a material containing copper as a main component.
8. The solar cell device according to any one of claim 1 to 3, wherein,
at least one of the first electrode and the second electrode has a surface roughness having an arithmetic average roughness ra=1 μm or more and 10 μm or less.
9. The solar cell device according to any one of claim 1 to 3, wherein,
the connection member includes an insulating layer laminated on the solar cell side of the resin layer at a portion between the one end portion and the other end portion.
10. A solar cell module is characterized in that,
a solar cell device comprising one or more solar cell devices according to any one of claims 1 to 9.
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| JP2018169680 | 2018-09-11 | ||
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| PCT/JP2019/019526 WO2020054129A1 (en) | 2018-09-11 | 2019-05-16 | Solar cell device and solar cell module |
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| EP4092760A1 (en) * | 2021-05-20 | 2022-11-23 | International Solar Energy Research Center Konstanz E.V. | Photovoltaic module |
| WO2023074573A1 (en) * | 2021-10-29 | 2023-05-04 | 出光興産株式会社 | Photoelectric conversion module, paddle, and method for manufacturing photoelectric conversion module |
| CN114156358B (en) * | 2022-02-07 | 2022-04-26 | 广东爱旭科技有限公司 | Solar cell string, solar cell module, and solar cell system |
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| JP2016004980A (en) * | 2014-06-19 | 2016-01-12 | 株式会社カネカ | Solar battery module and manufacturing method for the same |
| KR101816164B1 (en) * | 2016-09-22 | 2018-01-08 | 엘지전자 주식회사 | Solar cell module |
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| JP6597014B2 (en) * | 2015-07-21 | 2019-10-30 | 三洋電機株式会社 | Secondary battery |
| US20170256661A1 (en) * | 2016-03-02 | 2017-09-07 | Solarcity Corporation | Method of manufacturing photovoltaic panels with various geometrical shapes |
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| JP2016004980A (en) * | 2014-06-19 | 2016-01-12 | 株式会社カネカ | Solar battery module and manufacturing method for the same |
| JP2018137463A (en) * | 2015-10-08 | 2018-08-30 | エルジー エレクトロニクス インコーポレイティド | Solar cell module |
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