JP7291331B2 - Trench MOS type Schottky diode - Google Patents

Description

The present invention relates to trench MOS Schottky diodes.

Conventionally, a Schottky barrier diode (Schottky diode) using Ga ₂ O ₃ as a semiconductor layer is known (for example, Patent Document 1).

For example, Patent Document 1 discloses that the breakdown voltage of a Schottky diode is 1000 V when the electron carrier concentration and thickness of the n ⁻ Ga ₂ O ₃ layer are 9.95×10 ¹⁶ cm ⁻³ and 3.3 μm, respectively. is stated.

Further, a trench MOS Schottky diode using Si as a semiconductor layer and a trench MOS Schottky diode using SiC as a semiconductor layer are known (for example, Non-Patent Documents 1 and 2).

Non-Patent Document 1 describes that the breakdown voltage of a trench MOS Schottky diode using Si for the semiconductor layer is 107 V when the doping concentration and thickness of the n ⁻ Si layer are 1×10 ¹⁶ cm ⁻³ and 9 μm, respectively. Something is stated.

From the reverse voltage-reverse current characteristics described in Non-Patent Document 2, SiC is used for the semiconductor layer when the doping concentration and thickness of the n ⁻ SiC layer are 6×10 ¹⁵ cm ⁻³ and 4 μm, respectively. It can be read that the withstand voltage of the trench MOS type Schottky diode is about several tens of volts.

JP 2013-102081 A

T. Shimizu et al., Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, Osaka, pp.243-246 (2001). V. Khemka, et al., IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 5, MAY 2000, pp.286-288

In Patent Document 1, the withstand voltage of the Schottky diode is defined by the dielectric breakdown electric field strength of Ga ₂ O ₃ . However, in a Schottky diode using a material such as Ga ₂ O ₃ having a _large dielectric breakdown field strength, increasing the reverse voltage causes the anode electrode and the Ga ₂ O ₃ layer to break down before dielectric breakdown occurs. The leakage current between _{the three} layers becomes so large that the Schottky diode burns out.

Therefore, for a Schottky diode using Ga ₂ O ₃ as a semiconductor layer, it is appropriate to define the breakdown voltage as the reverse voltage when a leakage current of a predetermined magnitude (eg, 1 μA) flows. Note that the Schottky diode of Patent Document 1 does not have a special structure for suppressing leakage current, and has a carrier concentration of 9.95×10 ¹⁶ cm ⁻³ in the n ⁻ Ga ₂ O ₃ layer. , and a reverse voltage of 64 V when a leakage current of 1 μA flows.

An object of the present invention is to provide a trench MOS Schottky diode with high breakdown voltage and low loss.

One aspect of the present invention provides the following trench MOS Schottky diodes [1] to [2] in order to achieve the above objects.

[1] A first semiconductor layer made of a β-type Ga ₂ O ₃ -based single crystal, and a layer laminated on the first semiconductor layer, on the surface opposite to the first semiconductor layer, a second semiconductor layer made of a β-type Ga ₂ O ₃ -based single crystal having an open trench; and an anode electrode formed on a surface of the second semiconductor layer opposite to the first semiconductor layer. a cathode electrode formed on the surface of the first semiconductor layer opposite to the second semiconductor layer; an insulating film covering the inner surface of the trench of the second semiconductor layer; a trench MOS gate embedded in the trench of the semiconductor layer so as to be covered with the insulating film and in contact with the anode electrode, wherein the second semiconductor layer is a lower layer on the side of the first semiconductor layer; and an upper layer on the anode electrode side having a donor concentration higher than that of the lower layer, and having a reverse voltage of 600 V or more and 1200 V or less when a leak current of 1 μA flows.
[2] the Schottky junction formed between the second semiconductor layer and the anode electrode has a barrier height of 0.7 eV or more, and the upper layer has a donor concentration of 4.5×10 ¹⁶ cm ⁻³ or more; 2.4×10 ¹⁷ cm ⁻³ or less, and a mesa-shaped portion of the second semiconductor layer between the adjacent trenches is 1.4 μm according to the donor concentration of the upper layer of the second semiconductor layer. The trench MOS Schottky diode according to the above [1], having the following width. ”

According to the present invention, it is possible to provide a trench MOS Schottky diode with high breakdown voltage and low loss.

FIG. 1 is a vertical sectional view of a trench MOS Schottky diode according to the first embodiment. 2A and 2B are top views of the second semiconductor layer, each showing a typical example of a planar pattern of trenches. FIG. 3 is a vertical sectional view of a modification of the trench MOS Schottky diode according to the first embodiment. FIG. 4 is a vertical sectional view of a trench MOS Schottky diode according to the second embodiment. FIG. 5 shows a trench MOS Schottky diode (withstand voltage of 1200 V) having a second semiconductor layer with a two-layer structure, and a trench MOS shot as a comparative example having a single semiconductor layer instead of the second semiconductor layer. 4 is a graph showing forward characteristics of a key diode (withstand voltage of 1200 V); FIG. 6 shows a trench MOS Schottky diode (withstand voltage of 600 V) having a second semiconductor layer with a two-layer structure, and a trench MOS shot as a comparative example having a single semiconductor layer instead of the second semiconductor layer. 4 is a graph showing forward characteristics of a key diode (withstand voltage of 600 V);

[First embodiment]
(Structure of Trench MOS Schottky Diode)
FIG. 1 is a vertical sectional view of a trench MOS Schottky diode 1 according to the first embodiment. A trench MOS Schottky diode 1 is a vertical Schottky diode having a trench MOS region.

The trench MOS Schottky diode 1 includes a first semiconductor layer 10 and a trench 12 which is a layer laminated on the first semiconductor layer 10 and which opens on a surface 17 opposite to the first semiconductor layer 10 . , the anode electrode 13 formed on the surface 17 of the second semiconductor layer 11, and the surface of the first semiconductor layer 10 opposite to the second semiconductor layer 11. an insulating film 15 covering the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16 in contact with.

In the trench MOS Schottky diode 1, by applying a forward voltage (a positive potential on the side of the anode electrode 13) between the anode electrode 13 and the cathode electrode 14, the anode electrode 13 viewed from the second semiconductor layer 11 and the second semiconductor layer 11 is lowered, current flows from the anode electrode 13 to the cathode electrode 14 .

On the other hand, when a reverse voltage (negative potential on the anode electrode 13 side) is applied between the anode electrode 13 and the cathode electrode 14, current does not flow due to the Schottky barrier. When a reverse voltage is applied between the anode electrode 13 and the cathode electrode 14, a depletion layer spreads from the interface between the anode electrode 13 and the second semiconductor layer 11 and the interface between the insulating film 15 and the second semiconductor layer 11. .

Generally, the upper limit of the reverse leakage current of a Schottky diode is 1 μA. In this embodiment, the reverse voltage when a leakage current of 1 μA flows is defined as the withstand voltage.

For example, “Hiroyuki Matsunami, Noboru Otani, Tsunenobu Kimoto, Takashi Nakamura, “Semiconductor SiC Technology and Application”, Second Edition, Nikkan Kogyo Shimbun, September 30, 2011, p. 355” on the dependence of the reverse leakage current on the Schottky interface electric field intensity in a Schottky diode having a semiconductor layer of SiC, the current density of the reverse leakage current is 0.0001 A/cm ² . The electric field intensity directly under the Schottky electrode is about 0.8 MV/cm at this time, where 0.0001 A/cm ² is the electric field strength when a current of 1 μA flows through the Schottky electrode with a size of 1 mm×1 mm. It is the current density directly below the Schottky electrode.

Therefore, even if the dielectric breakdown electric field strength of the semiconductor material itself is several MV/cm, if the electric field strength immediately below the Schottky electrode exceeds 0.8 MV/cm, a leakage current exceeding 1 μA will flow.

For example, in order to obtain a breakdown voltage of 1200 V in a conventional Schottky diode that does not have a special structure for suppressing the electric field intensity directly under the Schottky electrode, the electric field intensity directly under the Schottky electrode is set to 0.8 MV/cm or less. In order to reduce the donor concentration in the semiconductor layer to the order of 10 ¹⁵ cm ⁻³ , it is necessary to make the semiconductor layer very thick. As a result, the conduction loss becomes very large, and it is difficult to fabricate a Schottky barrier diode with high withstand voltage and low loss.

Since the trench MOS Schottky diode 1 according to the present embodiment has a trench MOS structure, a high breakdown voltage can be obtained without increasing the resistance of the semiconductor layer. That is, the trench MOS Schottky diode 1 is a high withstand voltage and low loss Schottky diode.

Junction barrier Schottky (JBS) _diodes are known _as Schottky diodes with high breakdown voltage and low _{loss .} The area is not suitable for the JBS diode material required.

The first semiconductor layer 10 is made of an n-type Ga ₂ O ₃ system single crystal containing a group IV element such as Si or Sn as a donor. The donor concentration of the first semiconductor layer 10 is, for example, 1.0×10 ¹⁸ or more and 1.0×10 ²⁰ cm ⁻³ or less. The thickness T _s of the first semiconductor layer 10 is, for example, 10-600 μm. The first semiconductor layer 10 is, for example, a Ga ₂ O ₃ -based single crystal substrate.

Here, the Ga ₂ O ₃ -based single crystal refers to a Ga ₂ O ₃ single crystal or a Ga ₂ O ₃ single crystal to which an element such as Al or In is added. For example, a Ga ₂ O ₃ single crystal doped with Al and In (Ga _x Al _y In _(1−x−y) ) ₂ O ₃ (0<x≦1, 0≦y<1, 0<x+y ≤1) It may be a single crystal. When Al is added, the bandgap widens, and when In is added, the bandgap narrows. The above Ga ₂ O ₃ single crystal has, for example, a β-type crystal structure.

The second semiconductor layer 11 is made of an n-type Ga ₂ O ₃ system single crystal containing a group IV element such as Si or Sn as a donor. The second semiconductor layer 11 is, for example, an epitaxial layer epitaxially grown on the first semiconductor layer 10, which is a Ga ₂ O ₃ -based single crystal substrate.

A high donor concentration layer containing a high concentration of donors may be formed between the first semiconductor layer 10 and the second semiconductor layer 11 . This high donor concentration layer is used, for example, when the second semiconductor layer 11 is epitaxially grown on the first semiconductor layer 10 which is the substrate. In the early stage of growth of the second semiconductor layer 11, the amount of dopant taken in is unstable, and the acceptor impurity diffuses from the first semiconductor layer 10, which is the substrate. If the second semiconductor layer 11 is grown directly on the substrate, the resistance of the region of the second semiconductor layer 11 near the interface with the first semiconductor layer 10 may increase. To avoid such problems, a high donor concentration layer is used. The concentration of the high-donor-concentration layer is, for example, set higher than that of the second semiconductor layer 11 , and more preferably higher than that of the first semiconductor layer 10 .

The second semiconductor layer 11 is composed of an upper layer 11a on the anode electrode 13 side and a lower layer 11b on the first semiconductor layer 10 side. Upper layer 11a has a higher donor concentration than lower layer 11b. Also, the donor concentrations of the upper layer 11 a and the lower layer 11 b are lower than the donor concentration of the first semiconductor layer 10 .

As the donor concentration in the second semiconductor layer 11 increases, the electric field strength in each portion of the trench MOS Schottky diode 1 increases. Therefore, a large leak current flows even when a relatively small reverse voltage is applied. That is, the withstand voltage of the trench MOS Schottky diode 1 is lowered.

However, as a result of intensive research, the present inventor found that even if the donor concentration in the layer in which the trench 12 is formed in the second semiconductor layer 11 is increased to a certain concentration, It was found that the electric field strength (in the vicinity of the Schottky interface) in the semiconductor layer 11 is hardly affected. On the other hand, by increasing the donor concentration in the layer in which the trench 12 is formed in the second semiconductor layer 11, the electrical resistance of the second semiconductor layer 11 is lowered and the loss of the trench MOS Schottky diode 1 is reduced. reduced.

Therefore, the second semiconductor layer 11 is divided into an upper layer 11a and a lower layer 11b, and the donor concentration in the upper layer 11a is higher than that in the lower layer 11b. The loss of the trench MOS Schottky diode 1 can be reduced while suppressing the electric field intensity (in the vicinity of the Schottky interface) to less than 0.8 MV/cm.

When the height of the interface between the upper layer 11a and the lower layer 11b is equal to or higher than the height of the bottom of the trench 12, it is possible to effectively suppress an increase in the electric field strength near the Schottky interface due to an increase in the donor concentration of the upper layer 11a. . Furthermore, when the height of the interface between upper layer 11a and lower layer 11b is equal to or higher than the height of the lowest portion of trench MOS gate 16, the increase in electric field intensity near the Schottky interface can be suppressed more effectively.

The upper limit of the donor concentration range of the upper layer 11a of the second semiconductor layer 11, which has little effect on the breakdown voltage of the trench MOS Schottky diode 1, is determined by the mesa shape of the second semiconductor layer 11 between adjacent trenches 12. Depends on the width W _m of the part. Therefore, it is preferable to set the width _Wm according to the donor concentration of the upper layer 11 a of the second semiconductor layer 11 .

The second It is preferable that the donor concentration of the lower layer 11b of the semiconductor layer 11 is approximately 6.0×10 ¹⁶ cm ⁻³ or less. On the other hand, the lower the donor concentration in the lower layer 11b, the higher the resistance of the second ^{semiconductor} layer 11, which increases the forward loss. ^-3 or more is preferable. Also, in order to obtain a higher withstand voltage, it is preferable to lower the donor concentration to about 1.0×10 ¹⁶ cm ^{−3 ,} for example.

As the thickness _Te of the second semiconductor layer 11 increases, the maximum electric field strength in the second semiconductor layer 11 and the maximum electric field strength in the insulating film 15 decrease. By setting the thickness T _e of the second semiconductor layer 11 to about 6 μm or more, the maximum electric field strength in the second semiconductor layer 11 and the maximum electric field strength in the insulating film 15 can be effectively reduced. From the viewpoint of reducing the electric field intensity and miniaturizing the trench MOS Schottky diode 1, the thickness T _e of the second semiconductor layer 11 is preferably about 5.5 μm or more and 9 μm or less.

The electric field intensity of each portion of the trench MOS Schottky diode 1 changes depending on the depth _Dt of the trench 12 . In order to suppress the maximum electric field strength in the region immediately below the anode electrode 13 in the second semiconductor layer 11, the maximum electric field strength in the second semiconductor layer 11, and the maximum electric field strength in the insulating film 15, the trench 12 is preferably about 2 μm or more and 6 μm or less, more preferably about 3 μm or _more and about 4 μm or less. Also, in this specification, the width of the trench 12 is _Wt .

As the dielectric constant of the insulating film 15 increases, the maximum electric field strength in the insulating film 15 decreases. Therefore, the insulating film 15 is preferably made of a material having a high dielectric constant. For example, Al ₂ O ₃ (having a dielectric constant of approximately 9.3) and HfO ₂ (having a dielectric constant of approximately 22) can be used as the material of the insulating film 15, but HfO ₂ having a high dielectric constant can be used. Especially preferred.

Further, as the thickness T _i of the insulating film 15 increases, the maximum electric field strength in the second semiconductor layer 11 decreases. Strength increases. From the viewpoint of ease of manufacture, the thickness of the insulating film 15 is preferably as small as possible, more preferably 300 nm or less. However, as a matter of course, the thickness must be such that almost no current flows directly between the trench MOS gate 16 and the second semiconductor layer 11 .

The material of the trench MOS gate 16 is not particularly limited as long as it has conductivity. For example, highly doped polycrystalline Si or metals such as Ni and Au can be used.

As described above, the electric field strength in the trench MOS Schottky diode 1 depends on the width of the mesa-shaped portion between two adjacent trenches 12, the depth _Dt of the trenches 12, the thickness Ti of the insulating film 15 _, and the like. , but the planar pattern of the trenches 12 is hardly affected. Therefore, the planar pattern of the trenches 12 of the second semiconductor layer 11 is not particularly limited.

2A and 2B are top views of the surface 17 of the second semiconductor layer 11, respectively showing typical examples of planar patterns of the trenches 12. FIG.

The trenches 12 shown in FIG. 2(a) have a linear planar pattern. The trench 12 shown in FIG. 2(b) has a planar pattern such that the planar pattern of the mesa-shaped portion between two adjacent trenches 12 is dot-like.

The cross section of the trench MOS Schottky diode 1 shown in FIG. 1 is the cross section along the cutting line AA in the trench MOS Schottky diode 1 shown in FIG. corresponds to the cut plane along the cut line BB in the trench MOS type Schottky diode 1 shown in FIG.

The anode electrode 13 makes Schottky contact with the second semiconductor layer 11 . The anode electrode 13 is made of materials such as Pt, Pd, Au, Ni, Ag, Cu, Al, Mo, In, Ti, polycrystalline Si, oxides, nitrides and alloys thereof. The reverse leakage current at the Schottky interface between the anode electrode 13 and the second semiconductor layer 11 decreases as the barrier height at the interface between the anode electrode 13 and the second semiconductor layer 11 increases. On the other hand, when a metal having a high barrier height is used for the anode electrode 13, the forward rise voltage increases, resulting in an increase in forward loss. Therefore, it is preferable to select a material having a barrier height such that the maximum reverse leakage current is about 1 μA. For example, when the reverse breakdown voltage is from 600 V to 1200 V, the barrier height is set to about 0.7 eV, which makes it possible to reduce the forward loss most while keeping the reverse leak current at about 1 μA. The anode electrode 13 may have a multilayer structure in which different metal films are laminated, such as Pt/Au, Pt/Al, Pd/Au, Pd/Al, or Pt/Ti/Au and Pd/Ti/Au. .

The cathode electrode 14 makes ohmic contact with the first semiconductor layer 10 . The cathode electrode 14 is made of metal such as Ti. The cathode electrode 14 may have a multilayer structure in which different metal films are laminated, such as Ti/Au or Ti/Al. In order to ensure ohmic contact between the cathode electrode 14 and the first semiconductor layer 10, the layer of the cathode electrode 14 that contacts the first semiconductor layer 10 is preferably made of Ti.

FIG. 3 is a vertical sectional view of a modification of the trench MOS Schottky diode 1. FIG. As shown in FIG. 3, trench MOS Schottky diode 1 may have a field plate structure.

In the modification shown in FIG. 3, a dielectric film 18 made of SiO 2 _or the like is provided along the edge of the surface 17 of the second semiconductor layer 11, and the anode electrode 13 is formed on the dielectric film 18. The rim is up.

By providing such a field plate structure, electric field concentration at the end of anode electrode 13 can be suppressed. The dielectric film 18 also functions as a passivation film that suppresses surface leak current flowing through the surface 17 of the second semiconductor layer 11 . The presence or absence of the field plate structure depends on each parameter in the structure of the trench MOS Schottky diode 1 (the width W _m of the mesa-shaped portion, the depth D _t of the trench 12, the thickness T _i of the insulating film 15, etc.). does not affect the optimal value of

[Second embodiment]
The second embodiment differs from the first embodiment in that an insulator other than the insulator forming the insulating film 15 is embedded in the bottom of the trench. Descriptions of the same points as in the first embodiment will be omitted or simplified.

(Structure of Trench MOS Schottky Diode)
FIG. 4 is a vertical sectional view of a trench MOS Schottky diode 2 according to a second embodiment.

The second semiconductor layer 11 of the trench MOS Schottky diode 2 has a trench 21 opening into the plane 17 . An insulator 22 is embedded in the bottom of the trench 21 , and the insulator 15 covers the upper surface of the insulator 22 and the inner side surfaces of the trench 21 . Trench MOS gate 16 is embedded in trench 21 so as to be covered with insulating film 15 .

For example, after embedding the insulator 22 in the bottom of the trench 21 , the trench 12 is formed by etching the upper portion of the insulator 22 in a round shape. Then, an insulating film 15 and a trench MOS gate 16 are formed inside the trench 12 . The bottom surface of the trench 21 may be flat or rounded like the trench 12 .

The insulator 22 is made of an insulator having a dielectric constant lower than that of the insulating film 15 . Therefore, when a voltage is applied between the anode electrode 13 and the cathode electrode 14 , the electric field applied to the insulator 22 is greater than the electric field applied to the insulating film 15 .

In the trench MOS Schottky diode 1 according to the first embodiment, the region in the insulating film 15 where the electric field strength is the highest is the region near the bottom of the trench 12 . Also, the region where the electric field strength is the highest in the second semiconductor layer 11 is the region immediately below the trench 12 .

By providing the insulator 22 according to the second embodiment, the electric field strength in the region near the bottom of the trench 12 in the insulating film 15 and the electric field strength in the region immediately below the trench 12 in the second semiconductor layer 11 can be reduced. That is, the maximum electric field strength in the insulating film 15 and the maximum electric field strength in the second semiconductor layer 11 can be reduced.

As a material for the insulator 22, it is preferable to use a material with a low dielectric constant such as SiO ₂ (having a dielectric constant of approximately 4). It is preferable that the thickness _Tb of the insulator 22 immediately below the lowermost portion of the insulating film 15 is approximately 200 nm or more. Insulator 22 has the same planar pattern as trench 12 and typically has a width approximately equal to width _Wt of trench 12 .

In the trench MOS Schottky diode 2, when the height of the interface between the upper layer 11a and the lower layer 11b is equal to or higher than the height of the bottom of the trench 21, the electric field intensity near the Schottky interface increases with the increase in the donor concentration of the upper layer 11a. can effectively suppress the increase in Furthermore, when the height of the interface between upper layer 11a and lower layer 11b is equal to or higher than the height of the lowest portion of trench MOS gate 16, the increase in electric field intensity near the Schottky interface can be suppressed more effectively.

(Effect of Embodiment)
According to the first and second embodiments, the semiconductor layer made of Ga ₂ O ₃ in which the trench is formed is divided into an upper layer and a lower layer, and the donor concentration of the upper layer is higher than that of the lower layer. It is possible to provide a trench MOS type Schottky diode with withstand voltage and low loss.

By simulation, the effect of dividing the second semiconductor layer 11 into the upper layer 11a and the lower layer 11b in the structure of the trench MOS Schottky diode 1 according to the first embodiment was examined.

Evaluation results when the breakdown voltage of the trench MOS Schottky diode 1 is set to 1200V and 600V will be described below as examples.

(When setting the withstand voltage to 1200V)
When the breakdown voltage of the trench MOS Schottky diode 1 is set to 1200 V, and the barrier height of the Schottky junction formed between the second semiconductor layer 11 and the anode electrode 13 is 0.7 eV, the leak current is In order to suppress it, the electric field intensity right under the anode electrode 13 is required to be 0.4 MV/cm or less.

In order to satisfy this condition, the width _Wm of the mesa-shaped portion of the second semiconductor layer 11 between adjacent trenches 12 is set according to the donor concentration of the upper layer 11a of the second semiconductor layer 11 . For example, when the donor concentration of the upper layer 11a is 4.5×10 ¹⁶ cm ⁻³ , the width W _m is set to 1.4 μm or less, and when the donor concentration of the upper layer 11a is 6.0×10 ¹⁶ cm ⁻³ When the width W _m is set to 1.0 μm or less and the donor concentration of the upper layer 11a is 9.0×10 ¹⁶ cm ⁻³ , the width W _m is set to 0.7 μm or less and the donor concentration of the upper layer 11a is set to 1.0 μm. In the case of 2×10 ¹⁷ cm ⁻³ , the width W _m is set to 0.5 μm or less.

Also, the donor concentration and thickness of the lower layer 11b of the second semiconductor layer 11 at this time may be set to, for example, 3×10 ¹⁶ cm ⁻³ and 4.0 μm, respectively.

FIG. 5 shows a trench MOS Schottky diode 1 (hereinafter referred to as Example 1) having the second semiconductor layer 11 of the two-layer structure described above and a single semiconductor layer instead of the second semiconductor layer 11. 10 is a graph showing forward characteristics of a trench MOS Schottky diode (hereinafter referred to as Comparative Example 1) as a comparative example having .

Here, for Example 1, the donor concentration and thickness of the upper layer 11a are 6.0×10 ¹⁶ cm ⁻³ and 3 μm, respectively, and the donor concentration and thickness of the lower layer 11b are 3.0×10 16 cm −3 and 3.0×10 ¹⁶ cm ⁻³ , respectively. The width _Wt of the trench 12 was set at 0.5 μm, and the width _Wm of the mesa-shaped portion of the second semiconductor layer 11 was set at 1 μm. In Comparative Example 1, the donor concentration and thickness of the single-layer semiconductor layer instead of the second semiconductor layer 11 were 3.0×10 ¹⁶ cm ⁻³ and 7 μm, respectively, and the width W _t of the trench 12 was 1.0×10 16 cm −3 . The width _Wm of the mesa-shaped portion of the second semiconductor layer 11 was set to 0 μm and 2 μm. In both Example 1 and Comparative Example 1, the barrier height of the Schottky junction was set to 0.7 eV, the depth _Dt of the trench 12 was set to 3 μm, and the insulating film 15 was set to a HfO ₂ film having a thickness of 50 nm.

FIG. 5 shows that the on-resistance of Example 1 is smaller than that of Comparative Example 1. FIG. From this, it was confirmed that the on-resistance is reduced by dividing the second semiconductor layer 11 into the upper layer 11a and the lower layer 11b and making the donor concentration of the upper layer 11a higher than that of the lower layer 11b.

(When setting the withstand voltage to 600V)
When the breakdown voltage of the trench MOS Schottky diode 1 is set to 600 V, and the barrier height of the Schottky junction formed between the second semiconductor layer 11 and the anode electrode 13 is 0.7 eV, the breakdown voltage is 1200 V. In the same way as in the case of designing for .theta.

In order to satisfy this condition, the width _Wm of the mesa-shaped portion of the second semiconductor layer 11 between adjacent trenches 12 is set according to the donor concentration of the upper layer 11a of the second semiconductor layer 11 . For example, when the donor concentration of the upper layer 11a is 9.0×10 ¹⁶ cm ⁻³ , the width W _m is set to 1.4 μm or less, and when the donor concentration of the upper layer 11a is 1.2×10 ¹⁷ cm ⁻³ When the width W _m is set to 1.0 μm or less and the donor concentration of the upper layer 11a is 1.89×10 ¹⁷ cm ⁻³ , the width W _m is set to 0.67 μm or less and the donor concentration of the upper layer 11a is set to 2.0 μm. In the case of 4×10 ¹⁷ cm ⁻³ , the width W _m is set to 0.5 μm or less.

Also, the donor concentration and thickness of the lower layer 11b of the second semiconductor layer 11 at this time may be set to, for example, 3×10 ¹⁶ cm ⁻³ and 1.5 μm, respectively.

FIG. 6 shows a trench MOS Schottky diode 1 (hereinafter referred to as Example 2) having the second semiconductor layer 11 of the two-layer structure described above and a single semiconductor layer instead of the second semiconductor layer 11. 10 is a graph showing forward characteristics of a trench MOS Schottky diode (hereinafter referred to as Comparative Example 2) as a comparative example having .

Here, for Example 2, the donor concentration and thickness of the upper layer 11a are 1.2×10 ¹⁷ cm ⁻³ and 3 μm, respectively, and the donor concentration and thickness of the lower layer 11b are 3.0×10 16 cm −3 and 3.0×10 ¹⁶ cm ⁻³ , respectively. The width _Wt of the trench 12 was set at 0.5 μm, and the width _Wm of the mesa-shaped portion of the second semiconductor layer 11 was set at 1 μm. In Comparative Example 2, the donor concentration and thickness of the single-layer semiconductor layer instead of the second semiconductor layer 11 were 3.0×10 ¹⁶ cm ⁻³ and 4.5 μm, respectively, and the width W _t of the trench 12 was The width Wm of the mesa-shaped portion of the second semiconductor layer 11 was set to 1.0 μm, and the width _Wm to 2 μm. In both Example 2 and Comparative Example 2, the barrier height of the Schottky junction was set to 0.7 eV, the depth _Dt of the trench 12 was set to 3 μm, and the insulating film 15 was set to a HfO ₂ film having a thickness of 50 nm.

FIG. 6 shows that the on-resistance of Example 2 is smaller than that of Comparative Example 2. FIG. From this, it was confirmed that the on-resistance is reduced by dividing the second semiconductor layer 11 into the upper layer 11a and the lower layer 11b and making the donor concentration of the upper layer 11a higher than that of the lower layer 11b.

Although the embodiments and examples of the present invention have been described above, the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the scope of the invention.

Moreover, the embodiments and examples described above do not limit the invention according to the scope of claims. Also, it should be noted that not all combinations of features described in the embodiments and examples are essential to the means for solving the problems of the invention.

Reference Signs List 1, 2 Trench MOS type Schottky diode 10 First semiconductor layer 11 Second semiconductor layer 11a Upper layer 11b Lower layer 12, 21 Trench 13 Anode electrode 14 Cathode electrode , 15, 22... insulating film, 16... trench MOS gate

Claims (2)

a first semiconductor layer made of a β-type Ga ₂ O _3- based single crystal;
A second layer laminated on the first semiconductor layer and made of β-type Ga ₂ O ₃ system single crystal having a plurality of trenches opening on a surface opposite to the first semiconductor layer. a semiconductor layer of
an anode electrode formed on a surface of the second semiconductor layer opposite to the first semiconductor layer;
a cathode electrode formed on a surface of the first semiconductor layer opposite to the second semiconductor layer;
an insulating film covering the inner surface of the trench of the second semiconductor layer;
a trench MOS gate embedded in the trench of the second semiconductor layer so as to be covered with the insulating film and in contact with the anode electrode;
has
the second semiconductor layer is composed of a lower layer on the first semiconductor layer side and an upper layer on the anode electrode side having a donor concentration higher than that of the lower layer;
The reverse voltage is 600 V or more and 1200 V or less when a leakage current of 1 μA flows.
Trench MOS type Schottky diode. A Schottky junction formed between the second semiconductor layer and the anode electrode has a barrier height of 0.7 eV or more,
the upper layer has a donor concentration of 4.5×10 ¹⁶ cm ⁻³ or more and 2.4×10 ¹⁷ cm ⁻³ or less;
a mesa-shaped portion of the second semiconductor layer between adjacent trenches has a width of 1.4 μm or less depending on the donor concentration in the upper layer of the second semiconductor layer;
2. The trench MOS Schottky diode according to claim 1.

Images