JP7265941B2 - zygote - Google Patents

Description

The technology disclosed in this specification relates to a joined body including a ceramic member, an external conductor, a metal member, and a joining portion.

2. Description of the Related Art A heating device (also called a “susceptor”) is known that holds an object (eg, a semiconductor wafer) and heats it to a predetermined processing temperature (eg, about 400 to 650° C.). A heating apparatus is used as part of a semiconductor manufacturing apparatus such as, for example, a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.).

In general, a heating device has a holding surface and a back surface that are substantially orthogonal to a predetermined direction (hereinafter referred to as a "first direction"), a plate-like holding body made of ceramics, and a holding body extending in the first direction. and a columnar support that has a columnar shape and is joined to the back surface of the holder. A resistance heating element is arranged inside the holder, and a plurality of power receiving electrodes (electrode pads) electrically connected to the resistance heating element are arranged on the back side of the holder. Further, electrode terminals joined to the respective power receiving electrodes are accommodated in the columnar support. When a voltage is applied to the resistance heating element via the electrode terminals and the power receiving electrode, the resistance heating element generates heat, and the object (eg, semiconductor wafer) held on the holding surface of the holder is heated to a temperature of 400 to 650° C., for example. heated to some extent. The power-receiving electrode of the holder and the electrode terminal (metal member) are joined by a joining portion made of brazing material containing gold and nickel. Conventionally, there is known a technique for improving the bonding strength between the ceramic member and the electrode terminal by setting the porosity of the bonding portion to 0.1 to 15% (see Patent Document 1).

JP 2014-91676 A

In the conventional technique in which the porosity of the joint is set to 0.1 to 15%, the adhesion between the external conductor (receiving electrode) and the joint cannot be sufficiently ensured, and as a result, the ceramic member and the metal member ( There is room for improvement because the bonding strength with the electrode terminal) cannot be sufficiently improved.

Such problems are not limited to heating devices. For example, holding devices such as electrostatic chucks and vacuum chucks; heating devices such as susceptors; This is a common problem in the case of a bonded body including a metal member and a bonding portion.

This specification discloses a technology capable of solving at least part of the above-described problems.

The technology disclosed in this specification can be implemented as the following modes.

(1) A bonded body disclosed in the present specification includes a ceramic member, an external conductor disposed on the surface side of the ceramic member and having a first metal component as a main component, a metal member, and a second In a joined body comprising a brazing material having a metal component as a main component and a joining portion for joining the outer conductor and the metal member, in at least one specific cross section of the joined body, the outer conductor is , the first requirement of including a portion in which the ratio of existence of the specific portion in which the concentration (atm %) of the second metal component is 10% or more is 20% or more is included. In this joint, the outer conductor satisfies the first requirement in at least one specific cross-section of the joint. The first requirement is that the external conductor includes a portion in which the specific portion having a concentration (atm %) of the second metal component of 10% or more has an existence ratio of 20% or more. As a result, according to this joined body, compared to a configuration in which the outer conductor does not satisfy the first requirement, the second metal component deeply penetrates into the outer conductor. Adhesion is high, and as a result, the bonding strength between the external conductor and the metal member can be improved.

(2) In the joined body, the presence ratio of the second metal component at the boundary between the ceramic member and the external conductor is 70% or less in at least one specific cross section of the joined body. A configuration that satisfies the requirements of According to this joined body, the amount of the second metal component present between the ceramic member and the external conductor is small compared to a configuration in which the joined body does not satisfy the second requirement. It can improve the bonding strength with the body.

(3) In the joined body, the outer conductor is separated from the outer conductor by a length of 3% or more of the thickness of the outer conductor in the facing direction between the outer conductor and the metal member. A configuration may be adopted in which the first requirement is satisfied at a position moved from the boundary line with the joint portion toward the ceramic member. According to this joined body, the outer conductor is located at the position shifted from the boundary line between the outer conductor and the joint portion toward the ceramic member by a length of 3% or more of the thickness of the outer conductor. Compared to the configuration that does not satisfy the requirements, the adhesion between the external conductor and the joint portion is higher, and as a result, the joint strength between the external conductor and the metal member can be further improved.

(4) In the joined body, a surface portion of the external conductor that does not satisfy the first requirement may not be exposed to the outside. According to this joined body, the external conductor is less likely to be oxidized when it comes into contact with the outside air, compared to a configuration in which at least a part of the surface portion of the external conductor that does not satisfy the first requirement is exposed to the outside. Therefore, it is possible to suppress the decrease in the bonding strength between the external conductor and the metal member.

The technology disclosed in the present specification can be implemented in various forms, for example, a holding device, an electrostatic chuck, a heater device such as a CVD heater, a vacuum chuck, a shower head, etc. It can be realized in the form of a bonded body including an external conductor, a metal member, and a bonding portion, a manufacturing method thereof, and the like.

1 is a perspective view schematically showing an external configuration of a heating device 100 according to an embodiment; FIG. It is an explanatory view showing roughly the XZ section composition of heating device 100 in an embodiment. 4 is an explanatory view schematically showing an XZ cross-sectional configuration near a power receiving electrode 54 in the heating device 100; FIG. FIG. 11 is an explanatory diagram showing an enlarged configuration of a part near the power receiving electrode 54 in Modification 1; FIG. 11 is an explanatory diagram showing an enlarged configuration of a part near a power receiving electrode 54 in Modification 2;

A. This embodiment:
A-1. Configuration of heating device 100:
FIG. 1 is a perspective view schematically showing the external configuration of a heating device 100 according to the present embodiment, and FIG. 2 is an explanatory view schematically showing the XZ cross-sectional configuration of the heating device 100 according to the present embodiment. Note that FIG. 2 shows an enlarged portion of the vicinity of a power receiving electrode 54, which will be described later. Each figure shows mutually orthogonal XYZ axes for specifying directions. In this specification, for the sake of convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. may

The heating device 100 is a device that holds an object (eg, a semiconductor wafer W) and heats it to a predetermined processing temperature (eg, about 400 to 650° C.), and is also called a susceptor. The heating apparatus 100 is used as part of a semiconductor manufacturing apparatus such as, for example, a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.).

As shown in FIGS. 1 and 2, the heating device 100 includes a holder 10 and a columnar support 20. As shown in FIG.

(Holding body 10)
The holding body 10 is a substantially disk-shaped member having a holding surface S1 and a back surface S2 that are substantially orthogonal to a predetermined direction (vertical direction in this embodiment). The holder 10 is made of ceramics containing, for example, AlN (aluminum nitride) or Al ₂ O ₃ (alumina) as a main component. In addition, the main component here means the component with the highest content ratio (weight ratio). The diameter of the holder 10 is, for example, about 100 mm or more and 500 mm or less, and the thickness (length in the vertical direction) of the holder 10 is, for example, about 3 mm or more and 20 mm or less.

As shown in FIG. 2, a resistance heating element 50 as a heater for heating the holder 10 is arranged inside the holder 10 . The resistance heating element 50 is made of a conductive material such as tungsten or molybdenum. In this embodiment, the resistance heating element 50 forms a linear pattern extending substantially concentrically when viewed in the Z-axis direction. Both ends of the linear pattern of the resistance heating element 50 are arranged near the center of the holder 10, and upper ends of via conductors 52 are connected to the respective ends. A pair of recesses 12 are formed on the rear surface S2 side of the holder 10, and a power receiving electrode (electrode pad) 54 is provided in each recess 12. As shown in FIG. A lower end portion of the via conductor 52 is connected to the power receiving electrode 54 . As a result, the resistance heating element 50 and the power receiving electrode 54 are electrically connected through the via conductors 52 .

(Column support 20)
The columnar support 20 is a substantially cylindrical member extending in the predetermined direction (vertical direction). Like the holder 10, the columnar support 20 is made of ceramics containing, for example, AlN or _Al2O3 as _a main component. The outer diameter of the columnar support 20 is, for example, approximately 30 mm or more and 90 mm or less, and the height (vertical length) of the columnar support 20 is, for example, approximately 100 mm or more and 300 mm or less.

The holder 10 and the columnar support 20 are arranged such that the back surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 face each other in the vertical direction. The columnar support 20 is bonded to the vicinity of the central portion of the rear surface S2 of the holder 10 via a bonding layer 30 made of a known bonding material.

As shown in FIG. 2, the columnar support 20 is formed with a through hole 22 that opens toward the rear surface S2 of the holder 10 . The through-hole 22 is a hole with a substantially circular cross section that extends in substantially the same direction as the vertical direction and has a substantially constant inner diameter over the extending direction. A plurality of (two in this embodiment) electrode terminals 70 are housed in the through hole 22 . An upper end portion of each electrode terminal 70 is joined to the power receiving electrode 54 via a joint portion 56 containing brazing material. Note that the joint portion 56 may contain a substance other than brazing material. When a voltage is applied to the resistance heating element 50 from a power source (not shown) through each electrode terminal 70, each power receiving electrode 54, and via conductor 52, the resistance heating element 50 generates heat and is held on the holding surface S1 of the holder 10. The target object (eg, semiconductor wafer W) is heated to a predetermined temperature (eg, about 400 to 650° C.).

A-2. Detailed configuration of joint 56:
As described above, the joint portion 56 contains brazing material, and the main component of the brazing material is the second metal component. Therefore, the joint portion 56 can join the power receiving electrode 54 and the electrode terminal 70 and electrically connect the power receiving electrode 54 and the electrode terminal 70 . The second metal component is a different kind of metal component from the first metal component, which is the main component of the power receiving electrode 54 described below. The second metal component is preferably, for example, a Ni-based or Au-based metal (other than the active metal).

A-3. Detailed configuration of power receiving electrode 54:
A main component of the power receiving electrode 54 is a first metal component. The first metal component is preferably tungsten or molybdenum, for example. Note that the power receiving electrode 54 may contain other types of metal components in addition to the first metal component as the main component. For example, the power receiving electrode 54 may be configured to contain tungsten and molybdenum and have one of tungsten and molybdenum as a main component. Moreover, the power receiving electrode 54 may contain a component other than a metal component. For example, in order to reduce the difference in thermal expansion between the holding body 10 and the power receiving electrode 54 , the power receiving electrode 54 preferably contains the same ceramics as the main component of the holding body 10 .

Moreover, the power receiving electrode 54 contains a second metal component in addition to the first metal component, and satisfies at least the following first requirement.
<First requirement>
In at least one specific cross section of the heating device 100, the power receiving electrode 54 includes a portion in which the specific portion having the second metal component concentration (atm %) of 10% or more has an abundance ratio of 20% or more.

FIG. 3 is an explanatory view schematically showing an XZ cross-sectional configuration near the power receiving electrode 54 in the heating device 100. As shown in FIG. In FIG. 3, the main component of the holder 10 is AlN, the main component of the power receiving electrode 54 is W (tungsten), and the main component of the joint 56 is Ni. In addition, in FIG. 3, the light gray part means a specific part where the Ni concentration (atm%) is 10% or more, the dark gray means a part mainly composed of AlN, and the white part is It means a portion containing W as a main component. The concentration (atm %) of each component element can be specified by EPMA (Electron Probe Micro Analyzer) quantitative analysis. A method for determining whether or not the first requirement is satisfied will be described below with reference to FIG. 3 as an example.

On the condition that at least one specific line TL can be drawn on the power receiving electrode 54 in at least one specific cross section (eg, XZ cross section, 50 μm square) of the heating device 100, the heating device 100 satisfies the first requirement. determined to be satisfied. Here, the specific line TL is a line substantially parallel to the first boundary line L1 between the power receiving electrode 54 and the joint 56, and has a predetermined length (for example, the total length in a specific cross section) of the specific line TL. On the other hand, it is a line (straight line or curved line) in which the ratio of the specific portion is 20% or more. The first boundary line L1 does not have to be a strict boundary line between the power receiving electrode 54 and the joint 56 in the specific cross section, and an approximate line (straight line or curved line) of the boundary between the power receiving electrode 54 and the joint 56. OK. In the example of FIG. 3, the first boundary line L1 is a straight line substantially parallel to the horizontal direction (X-axis direction). More specifically, of the specific line TL, a line segment that overlaps with the specific portion will be referred to as a "first overlapping line segment B1". The specific line TL is, for example, the length of the first overlapping line segment B1 with respect to the total length of the specific line TL (when there are a plurality of first overlapping line segments B1, a plurality of first overlapping line segments It is a line in which the ratio of the total length of B1) is 20% or more. In addition, in the specific cross section, for a virtual line (not shown) substantially parallel to the first boundary line L1, for a predetermined length of the virtual line (for example, the total length in the specific cross section), , the portion where the ratio of the total length of the line segment overlapping with the first metal component (W) is 20% or more is the power receiving electrode 54 . The ratio of the total length of the line segments overlapping the first metal component (W) to the virtual line is preferably 90% or less. As shown in FIG. 2 , in the present embodiment, a reaction layer 60 that satisfies the first requirement is formed on the surface portion (lower surface portion) of the power receiving electrode 54 that faces the joint portion 56 . The vertical thickness of the reaction layer 60 is 3% or more of the vertical thickness of the power receiving electrode 54 (see the third requirement described below).

Moreover, the heating device 100 preferably satisfies the following second requirement.
<Second requirement>
In at least one specific cross section of the heating device 100, the existence ratio of Ni (the above specific portion) at the boundary between the holder 10 and the power receiving electrode 54 is 70% or less.
Specifically, of the second boundary line L2 between the holder 10 and the power receiving electrode 54, a line segment that overlaps with the specific portion is referred to as a "second overlapping line segment B2". For example, the second boundary line L2 has a length of the second overlapping line segment B2 (second overlapping line segment If there are a plurality of B2, the heating device 100 is determined to satisfy the second requirement on the condition that the ratio of the total length of the plurality of second overlapping line segments B2) is 70% or less. do. It should be noted that the second boundary line L2 does not have to be a strict boundary line between the holder 10 and the power receiving electrode 54 in the above specific cross section, and an approximate line (a straight line or curve). In the example of FIG. 3, the second boundary line L2 is a straight line substantially parallel to the horizontal direction (X-axis direction).

Moreover, the heating device 100 preferably satisfies the following third requirement.
<Third requirement>
The power receiving electrode 54 is held from the first boundary line L1 by a length of 3% or more of the thickness of the power receiving electrode 54 in the facing direction (vertical direction (Z-axis direction)) between the power receiving electrode 54 and the joint 56. The position moved to the body 10 side satisfies the above first requirement.

Note that the heating device 100 corresponds to a joined body in the claims, and the holding body 10 corresponds to a ceramic member in the claims. The power receiving electrode 54 corresponds to an external conductor in the claims, and the electrode terminal 70 corresponds to a metal member in the claims. Tungsten and molybdenum correspond to the first metal component in the claims.

A-4. Manufacturing method of heating device 100:
A method of manufacturing the heating device 100 is, for example, as follows. First, the holder 10 and the columnar support 20 are produced.

A method for manufacturing the holder 10 is, for example, as follows. First, to a mixture of 100 parts by weight of aluminum nitride powder, 1 part by weight of yttrium oxide (Y ₂ O ₃ ) powder, 20 parts by weight of an acrylic binder, and appropriate amounts of a dispersant and a plasticizer, an organic solvent such as toluene is added. A solvent is added and mixed in a ball mill to prepare a green sheet slurry. This green sheet slurry is formed into a sheet by a casting apparatus and then dried to produce a plurality of green sheets.

Alternatively, a metallized paste is prepared by adding conductive powder such as tungsten or molybdenum to a mixture of aluminum nitride powder, an acrylic binder, and an organic solvent such as terpineol and kneading the mixture. By printing this metallizing paste using, for example, a screen printer, an unsintered conductor layer that will later become the resistance heating element 50, the power receiving electrode 54, and the like is formed on a specific green sheet. In addition, by printing in a state in which via holes are provided in advance in the green sheet, an unsintered conductor portion that becomes the via conductor 52 later is formed.

Next, a plurality (for example, 20) of these green sheets are thermocompressed, and the periphery is cut as necessary to produce a green sheet laminate. This green sheet laminate is cut by machining to produce a disk-shaped compact, the compact is degreased, the degreased compact is sintered to produce a sintered body, and the surface of the sintered body is polished. process. The holder 10 is produced by the above steps.

A method for manufacturing the columnar support 20 is, for example, as follows. First, an organic solvent such as methanol is added to a mixture of 100 parts by weight of aluminum nitride powder, 1 part by weight of yttrium oxide powder, 3 parts by weight of a PVA binder, and appropriate amounts of a dispersant and a plasticizer, followed by a ball mill. Mix to obtain a slurry. This slurry is granulated with a spray dryer to produce a raw material powder. Next, the raw material powder is filled into a rubber mold in which cores corresponding to the through holes 22 are arranged, and is subjected to cold isostatic pressing to obtain a compact. The molded body obtained is degreased, and the degreased body is fired. Through the steps described above, the columnar support 20 is manufactured.

Next, the holder 10 and the columnar support 20 are joined together. After the rear surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 are subjected to lapping as necessary, at least one of the rear surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 is coated with, for example, a Ni-based After uniformly applying the brazing material, it is degreased.

Here, the higher the temperature during brazing and the longer the heating time during brazing, the more the first metal component (for example, W), which is the main component of the power receiving electrode 54, and the main component of the joint 56. The reactivity with a certain second metal component (for example, Ni) is increased, making it easier to mix with each other. Therefore, by changing at least one of the brazing temperature and the heating time, it is possible to adjust the existence ratio of the specific portion in the power receiving electrode 54 . However, if the temperature during brazing is too high or the heating time during brazing is too long, the second metal component (for example, Ni) moves between the power receiving electrode 54 and the holder 10, As a result, the adhesion between the power receiving electrode 54 and the holding body 10 may be reduced. Therefore, it is preferable to appropriately adjust the upper limit of the temperature and heating time during brazing. The heating temperature is preferably 950 degrees or more and 1150 degrees or less. Next, the back surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 are superimposed and hot-pressed to bond the holder 10 and the columnar support 20 together.

After bonding the holder 10 and the columnar support 20, the electrode terminals 70 are inserted into the through holes 22, and the upper ends of the electrode terminals 70 are attached to the power receiving electrodes 54 at a temperature of, for example, about 950.degree. C. to 1200.degree. A joint portion 56 was formed by brazing with a foil brazing material in a vacuum. The heating device 100 having the configuration described above is manufactured by the manufacturing method described above.

A-5. Effect of this embodiment:
As described above, in the heating device 100 of the present embodiment, the power receiving electrode 54 satisfies the first requirement in at least one specific cross section of the heating device 100 . The first requirement is that the external conductor includes a portion in which the specific portion having a concentration (atm %) of the second metal component of 10% or more has an existence ratio of 20% or more. Thus, according to the present embodiment, the second metal component, which is the main component of the power receiving electrode 54, penetrates deeper into the power receiving electrode 54 than when the power receiving electrode 54 does not satisfy the first requirement. Therefore, the adhesion between the power receiving electrode 54 and the joint portion 56 is high, and as a result, the joint strength between the power receiving electrode 54 and the electrode terminal 70 can be improved.

The above embodiment satisfies the second requirement that the proportion of the second metal component present at the boundary between the holder 10 and the power receiving electrode 54 is 70% or less in at least one specific cross section of the heating device 100. preferably. In the above-described embodiment, when the second requirement is satisfied, the amount of the second metal component present between the holder 10 and the power receiving electrode 54 is less than when the heating device 100 does not satisfy the second requirement. Since the amount is small, the bonding strength between the holder 10 and the power receiving electrode 54 can be improved.

In the above-described embodiment, the power receiving electrode 54 has a length of 3% or more of the thickness of the power receiving electrode 54 in the direction in which the power receiving electrode 54 and the joint portion 56 face each other (vertical direction (Z-axis direction)). It is preferable that the first requirement is satisfied at a position moved from the boundary line L1 toward the holder 10 side. In the present embodiment, the power receiving electrode 54 satisfies the first requirement at a position shifted from the boundary line with the first boundary line L1 toward the holder 10 by a length of 3% or more of the thickness of the power receiving electrode 54. The adhesion between the power receiving electrode 54 and the joint portion 56 is higher than in a configuration that does not satisfy the above, and as a result, the joint strength between the power receiving electrode 54 and the electrode terminal 70 can be further improved.

B. Variant:
The technology disclosed in this specification is not limited to the above-described embodiments, and can be modified in various forms without departing from the scope of the invention. For example, the following modifications are possible.

The configuration of the heating device 100 in the above embodiment is merely an example, and various modifications are possible. For example, in the above-described embodiment, the holder 10 and the columnar support 20 have substantially circular outer shapes when viewed in the Z-axis direction, but they may have other shapes. Further, the electrode terminals accommodated in the through holes 22 formed in the columnar support 20 are not limited to the terminals electrically connected to the resistance heating element 50. It may be a terminal electrically connected or a terminal electrically connected to an attraction electrode for electrostatic attraction. Further, in the above-described embodiment, the power receiving electrode 54 is arranged in the recess 12 formed on the back surface S2 of the holder 10, but it may be arranged on the back surface S2 of the holder 10. FIG. In short, the power receiving electrode only needs to be arranged on the second surface side of the holder. Moreover, the external conductor is not limited to the power receiving electrode 54, and in short, any conductor disposed on the surface side of the ceramic member may be used. Moreover, the metal member is not limited to the electrode terminal 70, and in short, any metal member arranged to face the external conductor in the first direction may be used.

Further, in the above-described embodiment, as shown in FIG. 2, at least part of the surface portion of the power receiving electrode 54 that does not satisfy the first requirement is exposed to the outside. Specifically, the lower surface portion of the power receiving electrode 54 on which the reaction layer 60 is formed is covered with the joint portion 56 , and the upper surface portion of the power receiving electrode 54 is covered with the holder 10 . However, the side portion of the power receiving electrode 54 is exposed to the outside inside the concave portion 12 formed in the holder 10 and exposed to the outside air. For this reason, for example, when the heating device 100 is placed in a high-temperature atmosphere, the power receiving electrode 54 is oxidized from the side portion of the power receiving electrode 54 that is exposed to the outside air, and the power receiving electrode 54 deteriorates, and the bonding strength between the power receiving electrode 54 and the electrode terminal 70 increases. may decrease, and for example, the electrode terminal 70 may come off from the power receiving electrode 54 . Therefore, it is preferable that the surface portion of the external conductor (receiving electrode 54) that does not satisfy the first requirement is not exposed to the outside. FIG. 4 is an explanatory view showing an enlarged part of the structure near the power receiving electrode 54 in Modification 1, and FIG. 5 is an explanatory view showing an enlarged part of the structure near the power receiving electrode 54 in Modification 2. be.

As shown in FIG. 4, in Modification 1, the surface portion of the external conductor (receiving electrode 54) that does not satisfy the first requirement (the surface portion where the reaction layer 60a is not formed) is a ceramic member (holding body 10a) and the surface portion that satisfies the first requirement is covered with the joint portion 56, so that the entire external conductor is not exposed to the outside. Specifically, in Modification 1, the power receiving electrode 54 is embedded in the holder 10a. Therefore, the upper surface portion and the side surface portion of the power receiving electrode 54 are covered with the holder 10a. In addition, of the lower surface portion of the power receiving electrode 54, the central portion where the first requirement is satisfied and the reaction layer 60a is formed is covered with the joint portion 56, and the outer portion of the reaction layer 60a is attached to the holder 10a. covered.

As shown in FIG. 5, in Modification 2, the surface portion of the external conductor (receiving electrode 54) electrically connected to the internal conductor (via conductor 52) is covered with the ceramic member (holder 10b). Since the portions (the side surface portion and the lower surface portion) other than the surface portion are covered with the joint portion 56b, the entire external conductor is not exposed to the outside. Specifically, in Modification 2, the side surface portion and the lower surface portion of the power receiving electrode 54 that are in contact with the joint portion 56b are formed with the reaction layer 60b and are covered with the joint portion 56b. An upper surface portion of the power receiving electrode 54 that is not covered with the joint portion 56b is covered with the holder 10b. In addition to the first and second modifications described above, one part of the external conductor may be embedded in the ceramic member and the other part of the external conductor may be embedded in the joint.

Further, the material for forming each member constituting the heating device 100 in the above embodiment is merely an example, and each member may be formed of another material. For example, in the heating device 100 in the above embodiment, the holder 10 and the columnar support 20 are made of ceramics containing aluminum nitride or alumina as a main component, but at least one of the holder 10 and the columnar support 20 may be made of other ceramics. The columnar support 20 may be made of a material other than ceramics (for example, made of metal such as aluminum or aluminum alloy). Similarly, the materials for forming the electrode terminals 70 and the like may also be other materials. Moreover, the power receiving electrode 54 may be mainly composed of metal components other than tungsten and molybdenum. In addition to the metal component, the power receiving electrode 54 may also contain a component other than the metal component, such as glass. In the above-described embodiment, the power receiving electrode 54 is used as an example of the external conductor. In the above-described embodiment, the second metal component of the brazing material included in the joint portion 56 may be a metal component other than Ni-based or Au-based metals.

In the above embodiment, the heating device 100 may have a configuration that does not satisfy at least one of the second requirement and the third requirement. Further, the specific cross section is not limited to the XZ cross section of the heating device 100, and may be another cross section such as the XY cross section of the heating device 100, for example.

The present invention is applicable not only to heating devices, but also to holding devices such as electrostatic chucks and vacuum chucks, heating devices such as susceptors, and parts for semiconductor manufacturing equipment such as shower heads. In short, the present invention is applicable to a joined body including a ceramic member made of ceramics, an external conductor, a metal member, and a joining portion.

Moreover, the manufacturing method of the heating device 100 in the above-described embodiment is merely an example, and various modifications are possible. For example, the holder 10 may be formed by press molding.

10, 10a, 10b: holder 12: recessed part 20: columnar support 22: through hole 30: joining layer 50: resistance heating element 52: via conductor 54: power receiving electrode 56, 56b: joining part 60, 60a, 60b: reaction Layer 70: Electrode terminal 100: Heating device B1: First overlapping line segment B2: Second overlapping line segment L1: First boundary line L2: Second boundary line S1: Holding surface S2: Back surface S3: Top surface TL : Specific line W: Semiconductor wafer

Claims (1)

a ceramic member;
an external conductor disposed on the surface side of the ceramic member and containing tungsten as a main component;
a metal member;
A bonded body comprising a brazing material containing Ni as a main component and a bonding portion for bonding the external conductor and the metal member,
in at least one particular cross-section of said conjugate,
The external conductor extends from the boundary line between the external conductor and the joint by a length of 3% or more of the thickness of the external conductor in the direction in which the external conductor and the metal member face each other. It satisfies the first requirement that the position moved to the ceramic member side includes a portion where the existence ratio of the specific portion having a Ni concentration (atm%) of 10% or more is 20% or more , and the external conductor Among them, the surface portion that does not satisfy the first requirement is not exposed to the outside,
satisfying the second requirement that the proportion of Ni at the boundary between the ceramic member and the external conductor is 70% or less;
A zygote characterized by:

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