JP7261891B2 - 精密プラズマ制御システム - Google Patents

精密プラズマ制御システム Download PDF

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Publication number
JP7261891B2
JP7261891B2 JP2021544637A JP2021544637A JP7261891B2 JP 7261891 B2 JP7261891 B2 JP 7261891B2 JP 2021544637 A JP2021544637 A JP 2021544637A JP 2021544637 A JP2021544637 A JP 2021544637A JP 7261891 B2 JP7261891 B2 JP 7261891B2
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JP
Japan
Prior art keywords
bias
plasma
time
burst
generator
Prior art date
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Active
Application number
JP2021544637A
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English (en)
Japanese (ja)
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JP2022519547A (ja
Inventor
ジエンバ，ティモシー
ミラー，ケネス
プレガー，ジェームス
マグリ，ケヴィン
ハンソン，エリック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eagle Harbor Technologies Inc
Original Assignee
Eagle Harbor Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Eagle Harbor Technologies Inc filed Critical Eagle Harbor Technologies Inc
Publication of JP2022519547A publication Critical patent/JP2022519547A/ja
Priority to JP2023063348A priority Critical patent/JP2023093562A/ja
Application granted granted Critical
Publication of JP7261891B2 publication Critical patent/JP7261891B2/ja
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Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021544637A 2019-01-31 2020-01-31 精密プラズマ制御システム Active JP7261891B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023063348A JP2023093562A (ja) 2019-01-31 2023-04-10 精密プラズマ制御システム

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962799738P 2019-01-31 2019-01-31
US62/799,738 2019-01-31
US201962869999P 2019-07-02 2019-07-02
US62/869,999 2019-07-02
PCT/US2020/016253 WO2020160497A1 (en) 2019-01-31 2020-01-31 Precise plasma control system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023063348A Division JP2023093562A (ja) 2019-01-31 2023-04-10 精密プラズマ制御システム

Publications (2)

Publication Number Publication Date
JP2022519547A JP2022519547A (ja) 2022-03-24
JP7261891B2 true JP7261891B2 (ja) 2023-04-20

Family

ID=71841683

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021544637A Active JP7261891B2 (ja) 2019-01-31 2020-01-31 精密プラズマ制御システム
JP2023063348A Pending JP2023093562A (ja) 2019-01-31 2023-04-10 精密プラズマ制御システム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023063348A Pending JP2023093562A (ja) 2019-01-31 2023-04-10 精密プラズマ制御システム

Country Status (4)

Country Link
JP (2) JP7261891B2 (zh)
KR (1) KR20210123343A (zh)
CN (1) CN114144860A (zh)
WO (1) WO2020160497A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
KR20220157256A (ko) * 2021-05-20 2022-11-29 인투코어테크놀로지 주식회사 반도체 공정에서 바이어스 전원을 제공하는 주파수 발생 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070212811A1 (en) 2002-06-05 2007-09-13 Applied Materials, Inc. Low temperature CVD process with selected stress of the CVD layer on CMOS devices
US20150256086A1 (en) 2014-02-28 2015-09-10 Eagle Harbor Technologies, Inc. Galvanically isolated output variable pulse generator disclosure
JP2018535504A (ja) 2015-10-03 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 近似鋸歯状波パルス生成によるｒｆ電力供給

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164513A (en) * 1984-09-01 1986-03-19 Marconi Co Ltd A pulse generator
JP2001238470A (ja) * 2000-02-21 2001-08-31 Ngk Insulators Ltd パルス電力発生用スイッチ回路
US6831377B2 (en) * 2000-05-03 2004-12-14 University Of Southern California Repetitive power pulse generator with fast rising pulse
US11482404B2 (en) * 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US20200176234A1 (en) * 2017-04-07 2020-06-04 Ionquest Corp. High-power resonance pulse ac hedp sputtering source and method for material processing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070212811A1 (en) 2002-06-05 2007-09-13 Applied Materials, Inc. Low temperature CVD process with selected stress of the CVD layer on CMOS devices
US20150256086A1 (en) 2014-02-28 2015-09-10 Eagle Harbor Technologies, Inc. Galvanically isolated output variable pulse generator disclosure
JP2018535504A (ja) 2015-10-03 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 近似鋸歯状波パルス生成によるｒｆ電力供給

Also Published As

Publication number Publication date
WO2020160497A1 (en) 2020-08-06
KR20210123343A (ko) 2021-10-13
JP2023093562A (ja) 2023-07-04
CN114144860A (zh) 2022-03-04
JP2022519547A (ja) 2022-03-24

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