JP7254462B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP7254462B2
JP7254462B2 JP2018150541A JP2018150541A JP7254462B2 JP 7254462 B2 JP7254462 B2 JP 7254462B2 JP 2018150541 A JP2018150541 A JP 2018150541A JP 2018150541 A JP2018150541 A JP 2018150541A JP 7254462 B2 JP7254462 B2 JP 7254462B2
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oxide
insulator
conductor
transistor
oxygen
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JP2020027825A (ja
JP2020027825A5 (https=
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舜平 山崎
直樹 奥野
寛美 澤井
大樹 駒形
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2018150541A 2018-08-09 2018-08-09 半導体装置の作製方法 Active JP7254462B2 (ja)

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JP2020027825A JP2020027825A (ja) 2020-02-20
JP2020027825A5 JP2020027825A5 (https=) 2021-09-16
JP7254462B2 true JP7254462B2 (ja) 2023-04-10

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12604536B2 (en) 2020-03-26 2026-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7777531B2 (ja) * 2020-08-19 2025-11-28 株式会社半導体エネルギー研究所 ハフニウムジルコニウム酸化物の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017072627A1 (ja) 2015-10-28 2017-05-04 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
US20170229486A1 (en) 2016-02-05 2017-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2018022879A (ja) 2016-07-20 2018-02-08 株式会社リコー 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017072627A1 (ja) 2015-10-28 2017-05-04 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
US20170229486A1 (en) 2016-02-05 2017-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2017143255A (ja) 2016-02-05 2017-08-17 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP2018022879A (ja) 2016-07-20 2018-02-08 株式会社リコー 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム
US20190245090A1 (en) 2016-07-20 2019-08-08 Minehide Kusayanagi Field-effect transistor, method for producing the same, display element, image display device, and system

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