JP7242005B2 - INSULATION MOLDED BODY, SOLID INSULATED BUSBAR, METHOD FOR MANUFACTURING INSULATED MOLDED BODY, AND METHOD FOR MANUFACTURING SOLID INSULATED BUSBAR - Google Patents

Description

TECHNICAL FIELD The present disclosure relates to an insulating molded body, a solid insulating busbar, a method for manufacturing an insulating molded body, and a method for manufacturing a solid insulating busbar.
This application claims priority based on Japanese Patent Application No. 2018-157547 filed in Japan on August 24, 2018, and incorporates all the descriptions described in the Japanese application.

Solid insulated busbars are used for connections between power equipment. Patent Document 1 discloses a busbar in which a rod-shaped conductor and a short stranded wire are combined and connected, terminal fittings connected to both ends of the busbar, an internal semiconducting layer molded on the busbar and the terminal fitting, an insulating layer, and A molded insulated interconnect busbar with an outer semi-conductive layer is disclosed. In the molded insulated interconnecting busbar described in Patent Document 1, a busbar having terminal fittings connected to both ends is placed in a mold, and an internal semiconductive layer, an insulating layer, and an external semiconductive layer are sequentially molded thereon to insulate the busbar. Created by forming a body.

JP-A-10-233244

The insulating molded body of the present disclosure is
An insulating molded body molded into a hollow shape,
a tubular inner semi-conductive layer;
an insulating layer provided on the outer periphery of the inner semi-conductive layer;
an outer semi-conductive layer provided around at least an end of the insulating layer;
a first hollow end having a first end face of the insulating layer and a first end face of the outer semi-conductive layer;
A first end surface of the insulating layer is a machined surface.

The solid insulated busbar of the present disclosure includes:
the insulating molded body of the present disclosure;
a conductor inserted into the inner semiconductive layer of the insulating molded body with a gap therebetween.

The method for manufacturing an insulating molded body of the present disclosure includes:
a first step of forming a tubular inner semiconducting layer;
a second step of shaping the end of the hollow outer semiconducting layer with an open edge;
a third step of placing the inner semi-conductive layer and the edge of the outer semi-conductive layer in a mold;
a fourth step of inserting a core inside ends of the inner semi-conductive layer and the outer semi-conductive layer;
a fifth step of filling an insulating material in the mold to form an insulating layer that integrates the inner semiconductive layer and the end portion of the outer semiconductive layer;
The third step is performed so as to space the ends of the outer semiconductive layer at least near the outer periphery of both ends of the inner semiconductive layer,
The fourth step includes forming a gap between an outer peripheral surface of the core and an inner peripheral surface including the opening edge of the outer semiconductive layer,
In the fifth step, the insulating material is filled with the gap facing upward so that the insulating material overflows the gap.

A method of manufacturing a solid insulated busbar of the present disclosure includes:
a step of manufacturing an insulating molded body by the method for manufacturing an insulating molded body of the present disclosure;
and inserting a conductor into the inner semiconductive layer from one end side of the insulating molded body.

FIG. 1 is a schematic vertical cross-sectional view of a solid insulating busbar provided with an insulating molded body according to Embodiment 1. FIG. FIG. 2 is a sectional view taken along line II-II of FIG. FIG. 3 is a schematic configuration diagram showing an example of a solid-insulated busbar connection structure according to the first embodiment. 4 is a schematic longitudinal sectional view showing an example of a mold used for molding an insulating layer in Embodiment 1. FIG. FIG. 5 is a schematic vertical cross-sectional view of a molded body in which an inner semiconductive layer and an end portion of an outer semiconductive layer are integrated with an insulating layer in Embodiment 1. FIG. FIG. 6 is a schematic vertical cross-sectional view of a solid insulating busbar provided with an insulating molded body according to Embodiment 2. FIG. FIG. 7 is a schematic longitudinal sectional view showing an example of a mold used for molding an insulating layer in Embodiment 2. FIG.

[Problems to be Solved by the Present Disclosure]
When the insulator of the solid insulated busbar is an insulating molded body molded using a mold, gas such as air in the mold is released when the mold is filled with an insulating material and the insulating layer is formed. voids may occur in the insulating layer. Such voids often occur at the portion where the insulating material is finally filled in the mold. Hereinafter, the portion to be filled with the insulating material last is referred to as the “final filling portion”. If there are voids in the insulating layer, there is a risk of deterioration in quality, such as deterioration in the insulating properties of those portions. Therefore, an insulating molded body having a structure in which voids are less likely to occur in the insulating layer is desired.

An object of the present disclosure is to provide an insulating molded body that can suppress the generation of voids in an insulating layer, and a method for manufacturing the same. Another object of the present invention is to provide a solid insulating busbar having an insulating molding and a method for manufacturing the same.

[Effect of the present disclosure]
The insulating molded body of the present disclosure can suppress the generation of voids in the insulating layer. The solid insulating busbar of the present disclosure is excellent in insulating properties of the insulating layer in the insulating molded body. The method for manufacturing an insulating molded body according to the present disclosure can suppress the generation of voids in the insulating layer. The method for manufacturing a solid insulated busbar of the present disclosure can manufacture a solid insulated busbar in which the insulating layer in the insulating molded body has excellent insulating properties.

[Description of Embodiments of the Present Disclosure]
First, the embodiments of the present disclosure are listed and described.

(1) The insulating molded body according to the embodiment of the present disclosure is
An insulating molded body molded into a hollow shape,
a tubular inner semi-conductive layer;
an insulating layer provided on the outer periphery of the inner semi-conductive layer;
an outer semi-conductive layer provided around at least an end of the insulating layer;
a first hollow end having a first end face of the insulating layer and a first end face of the outer semi-conductive layer;
A first end surface of the insulating layer is a machined surface.

The insulating molded body of the present disclosure is a machined surface obtained by machining the first end face of the insulating layer at the first hollow end. The processed surface of the first end surface of the insulating layer is formed by removing by machining the portion where the insulating material overflows when the insulating layer is formed by filling the insulating material in the mold. be. Since the first end face of the insulating layer is exposed at the end face of the first hollow end, the first end face of the insulating layer is finally filled in the mold with the insulating material when molding the insulating layer. It can be provided in the final filling section. As a result, voids are less likely to occur in the insulating layer by allowing the insulating material to overflow from the portion of the first end surface that will be the final filled portion of the insulating material during molding of the insulating layer, thereby removing the gas in the mold. Therefore, the insulating molded body of the present disclosure can suppress the generation of voids in the insulating layer.

(2) As one form of the insulating molded body of the present disclosure,
Having a second hollow end other than the first hollow end,
The second hollow end part connects the second end surface of the outer semi-conductive layer and the second edge of the insulating layer located on the inner peripheral surface of the outer semi-conductive layer without reaching the second end surface. have.

The form has a second edge of the insulating layer located on the inner peripheral surface of the outer semi-conducting layer at the second hollow end. At the second hollow end, the second edge of the insulating layer is positioned on the inner peripheral surface without reaching the second end face of the external semiconductive layer. The end face is not exposed to the end face of the second hollow end. In this case, it is possible to eliminate the need for machining the end surface of the insulating layer in the second hollow end.

(3) As one form of the insulating molded body of the present disclosure,
Having a third hollow end other than the first hollow end,
the third hollow end portion has a third end face of the insulating layer and a third end face of the outer semi-conductive layer;
The third end surface of the insulating layer may be a molding surface molded with a mold.

In the above-described configuration, the third end surface of the insulating layer in the third hollow end portion is a molding surface formed by a mold, so machining of the third end surface can be omitted.

(4) As one form of the insulating molded body of the present disclosure,
all hollow ends other than the first hollow end are composed of at least one of a second hollow end and a third hollow end;
The second hollow end part connects the second end surface of the outer semi-conductive layer and the second edge of the insulating layer located on the inner peripheral surface of the outer semi-conductive layer without reaching the second end surface. have
the third hollow end portion has a third end face of the insulating layer and a third end face of the outer semi-conductive layer;
The third end surface of the insulating layer may be a molding surface molded with a mold.

In the above embodiment, all hollow ends other than the first hollow end are composed of at least one of the second hollow end and the third hollow end. Therefore, the first end surface of the insulating layer at the first hollow end portion is provided in the final filling portion of the insulating material when molding the insulating layer. In the second hollow end, the second edge of the insulating layer is located on the inner peripheral surface of the outer semiconductive layer, and in the third hollow end, the third end surface of the insulating layer is the molding surface. be. Therefore, it is not necessary to machine the end face of the insulating layer at the second and third hollow end portions.

(5) As one form of the insulating molded article of the present disclosure,
The inner semi-conductive layer, the insulating layer and the outer semi-conductive layer may be made of a rubber material.

In the above-described mode, the insulating molded body is made of a rubber material, thereby improving the flexibility of the insulating molded body.

(6) A solid insulated busbar according to an embodiment of the present disclosure,
The insulating molded article according to any one of (1) to (5) above;
a conductor inserted into the inner semiconductive layer of the insulating molded body with a gap therebetween.

The solid insulated busbar of the present disclosure includes the insulating molded body of the present disclosure. Therefore, the solid insulating busbar of the present disclosure has few voids in the insulating layer in the insulating molded body, and the insulating layer has excellent insulating properties.

(7) As one form of the solid insulated busbar of the present disclosure,
The conductor may be formed of a braided wire.

In the above configuration, the conductor is formed of a braided wire, so that the solid insulated busbar is excellent in flexibility. Therefore, it is easy to position and connect each end of the solid insulated bus bar to the connection point of each power device to be connected. When power devices are connected by a solid insulated busbar, the height positions of the connection points of the power devices may differ, and the positions of the connection points may shift due to the installation accuracy of the power devices. In that case, the solid insulated busbar must be bent to align each end with each connection target. A braided wire has excellent flexibility and is easy to bend, so the flexibility of the solid insulated busbar is improved. Therefore, in the above configuration, the solid insulated busbars can be easily bent, and it is easy to cope with positional deviation of the connection points.

(8) A method for manufacturing an insulating molded body according to an embodiment of the present disclosure includes:
a first step of forming a tubular inner semiconducting layer;
a second step of shaping the end of the hollow outer semiconducting layer with an open edge;
a third step of placing the inner semi-conductive layer and the edge of the outer semi-conductive layer in a mold;
a fourth step of inserting a core inside ends of the inner semi-conductive layer and the outer semi-conductive layer;
a fifth step of filling an insulating material in the mold to form an insulating layer that integrates the inner semiconductive layer and the end portion of the outer semiconductive layer;
The third step is performed so as to space the ends of the outer semiconductive layer at least near the outer periphery of both ends of the inner semiconductive layer,
The fourth step includes forming a gap between an outer peripheral surface of the core and an inner peripheral surface including the opening edge of the outer semiconductive layer,
In the fifth step, the insulating material is filled with the gap facing upward so that the insulating material overflows the gap.

In the method of manufacturing an insulating molded body of the present disclosure, the ends of the inner semi-conductive layer and the outer semi-conductive layer are placed in a mold. Further, a core is inserted inside the end portions of the inner semiconductive layer and the outer semiconductive layer, and is inserted between the outer peripheral surface of the core inserted inside the outer semiconductive layer and the inner peripheral surface including the opening edge. form a gap. Then, the mold is filled with an insulating material with the gap facing upward, and the insulating layer is molded so that the inner semiconductive layer and the end of the outer semiconductive layer are integrated. According to the manufacturing method, in the fifth step of molding the insulating layer, the gap provided above the mold is positioned at the final filling portion. Therefore, voids are less likely to occur in the insulating layer by allowing the insulating material to overflow from the gaps to release the gas in the mold. Therefore, the method for manufacturing an insulating molded body according to the present disclosure can suppress the generation of voids in the insulating layer.

When the insulating molded body is produced by the production method of the present disclosure, the gap formed between the core and the edge of the opening of the outer semiconducting layer is filled with an insulating material, and the end face of the insulating layer is the opening of the outer semiconducting layer. Exposed from the edge. The portion where the insulating material overflows from the gap is removed by machining after the insulating layer is molded, thereby forming a processed surface on the end surface of the insulating layer. Therefore, the manufacturing method of the present disclosure includes a hollow end portion having an end surface of an insulating layer and an end surface of an external semiconductive layer, and having the end surface of the insulating layer as a processing surface, specifically the above-described first hollow end. part can be formed.

(9) A method for manufacturing a solid insulated busbar according to an embodiment of the present disclosure includes:
A step of manufacturing an insulating molded body by the method for manufacturing an insulating molded body according to (8) above;
and inserting a conductor into the inner semiconductive layer from one end side of the insulating molded body.

The method for manufacturing a solid insulating busbar of the present disclosure uses the insulating molded body manufactured by the method for manufacturing an insulating molded body of the present disclosure. Therefore, the method for manufacturing a solid insulated busbar of the present disclosure can manufacture a solid insulated busbar that has few voids in the insulating layer of the insulating molded body and has excellent insulating properties of the insulating layer.

[Details of the embodiment of the present disclosure]
Specific examples of an insulating molded body and a solid insulating busbar according to embodiments of the present disclosure will be described below with reference to the drawings. The same reference numerals in the drawings indicate the same names. The present invention is not limited to these exemplifications, but is indicated by the scope of the claims, and is intended to include all modifications within the meaning and scope of equivalents to the scope of the claims.

[Embodiment 1]
An insulating molded body 20 and a solid insulating bus bar 1 according to Embodiment 1 will be described with reference to FIGS. 1 to 3. FIG. FIG. 1 is a vertical cross-sectional view along the central axis of the solid insulation busbar 1. FIG. FIG. 2 is a cross-sectional view taken along line II--II shown in FIG. The longitudinal direction of the solid insulation busbar 1 refers to the axial direction. FIG. 3 shows an example of a connection structure using a solid insulated busbar 1. As shown in FIG. A connection structure 100 illustrated in FIG. 3 connects a gas insulated switchgear (GIS: Gas Insulated Switchgear) serving as a mating device 101 and a transformer via a solid insulated busbar 1 . Although the GIS and transformer are not shown in FIG. 3, the GIS is located on the left side and the transformer is located on the right side. In the following description, one end side of the solid insulated bus 1 connected to the transformer is called the Tr side, and the other end side connected to the GIS is called the GIS side.

The solid insulated busbar 1 shown in FIG. 1 includes a long conductor 10, terminals 11G and 11T attached to the ends of the conductor 10, and an insulating molding 20 covering the conductor 10 and the terminals 11G and 11T. The insulating molded body 20 is molded in a hollow shape. As shown in FIGS. 1 and 2, the insulating molded body 20 includes an inner semi-conductive layer 21, an insulating layer 22 and an outer semi-conductive layer 23 in order from the inside to the outside. As shown in FIG. 1, the insulating molded body 20 according to the first embodiment has a first hollow end having a first end surface 221 of the insulating layer 22 and a first end surface 231 of the end portion 23eg of the outer semi-conductive layer 23. One of the features is that it has a part. In this example, the first hollow end corresponds to the hollow end 50 with the working opening 26 . A first end surface 221 of the insulating layer 22 is a machined surface.

<Solid insulated busbar>
The solid insulated busbar 1 includes a conductor 10, terminals 11G and 11T, and an insulating molding 20, as shown in FIG.

(conductor)
The conductor 10 is arranged in the insulating molded body 20 by being inserted into the inner semi-conductive layer 21 of the insulating molded body 20, as shown in FIG. The conductor 10 is typically made of a flexible conductor, such as a braided wire or a stranded wire, which has excellent flexibility with respect to a bar. Since the conductor 10 is made of a flexible conductor, the flexibility of the solid insulated busbar 1 can be improved. In particular, a braided wire is suitable as the conductor 10 because it is more flexible than a stranded wire. The cross-sectional shape of the conductor 10 is not particularly limited, and various shapes such as a rectangular shape, a circular shape, and an elliptical shape can be adopted. The cross-sectional shape of the conductor 10 is the cross-sectional shape orthogonal to the longitudinal direction of the conductor 10 . In this example, the conductor 10 is formed of a copper flat braided wire, and as shown in FIG. 2, the cross-sectional shape of the conductor 10 is rectangular. More specifically, the conductor 10 of this example is constructed by overlapping three flat braided wires in the thickness direction. The dimensions of the conductor 10 are appropriately set according to specifications. For example, the conductor 10 has a length of 30 cm or more and 300 cm or less, and a cross-sectional dimension of the conductor 10 indicated by thickness T ₁₀ ×width W ₁₀ in FIG. 2 is 2 mm×10 mm or more and 40 mm×75 mm or less.

(Terminal)
Terminals 11G and 11T are attached to the ends of the conductor 10 . In this example, as shown in FIGS. 1 and 3, the terminal 11G is attached to the end of the conductor 10 on the GIS side. A terminal 11T is attached to the end of the conductor 10 on the Tr side. In this example, the terminal 11G on the GIS side is flat. Specifically, the terminal 11G has a pair of flat plate-shaped terminal pieces that sandwich the end of the conductor 10 from the thickness direction, and is attached by bolts or the like. The terminal 11G is provided with a through hole 112 penetrating in the thickness direction of the terminal piece. This through hole 112 is for fixing the conductor lead-out rod 3G with a bolt 113 when connecting the conductor lead-out rod 3G shown in FIG. 3 which will be described later. On the other hand, the Tr-side terminal 11T has a cylindrical base portion 11b having a pair of semi-cylindrical terminal pieces that sandwich the end portion of the conductor 10 from the thickness direction, and a tip portion 11a that protrudes from the base portion 11b. etc. is installed. The tip portion 11a of the terminal 11T is thinner than the base portion 11b, and is fitted into an insertion hole 30 formed in the conductor lead-out rod 3T when connecting the conductor lead-out rod 3T shown in FIG. 3 to be described later. The terminals 11G and 11T are made of copper, for example.

(insulating molded body)
The insulating molded body 20 is a hollow elongated molded body, as shown in FIGS. 1 and 5 . The insulating molded body 20 is molded in the shape of a square tube having a uniform inner and outer diameter at its intermediate portion 20M. The Tr-side end portion 20T of the insulating molded body 20 is formed into a spindle shape that is thicker than the intermediate portion 20M. A GIS-side end portion 20G of the insulating molded body 20 is formed in a hammerhead shape substantially orthogonal to the intermediate portion 20M. The insulating molded body 20 of this example has a total of three hollow ends 50, one at the end 20T on the Tr side and two at the end 20G on the GIS side. are communicated with.

As shown in FIG. 1, the insulating molded body 20 includes a cylindrical inner semiconductive layer 21, an insulating layer 22 provided on the outer periphery of the inner semiconductive layer 21, and an outer periphery of at least an end portion of the insulating layer 22. and an outer semiconducting layer 23 . By having the inner semiconducting layer 21 and the outer semiconducting layer 23 inside and outside the insulating layer 22 , electric field stress applied to the insulating compact 20 when a voltage is applied to the conductor 10 can be relaxed. The insulating molded body 20 of this example is mainly made of a rubber material. Since the insulating molded body 20 is made of a rubber material, the flexibility of the insulating molded body 20 is improved, and the flexibility of the solid insulating busbar 1 can be improved.

An insertion hole 200 is formed in the inner semiconductive layer 21 along the axial direction from one end on the Tr side toward the other end on the GIS side. The conductor 10 with terminals 11G and 11T having the terminals 11G and 11T attached to the ends of the conductor 10 is inserted into the insertion hole 200 over the entire length.

The cross-sectional shape of the inner periphery of the internal semiconducting layer 21 , that is, the portion of the insertion hole 200 where the conductor 10 is arranged has a shape corresponding to the cross-sectional shape of the conductor 10 , and the cross-sectional dimension thereof is larger than the cross-sectional dimension of the conductor 10 . big. Therefore, as shown in FIG. 2, a gap 12 is formed between the outer peripheral surface of the conductor 10 and the inner peripheral surface of the internal semiconducting layer 21, and the conductor 10 is arranged in the insulating molded body 20 with the gap 12 therebetween. ing. That is, the conductor 10 of this example is inserted into the inner semiconducting layer 21 with the gap 12 therebetween. Therefore, the inner semiconductive layer 21 of the insulating molded body 20 does not adhere to the outer peripheral surface of the conductor 10, and the rubber material constituting the insulating molded body 20 does not enter the surface of the braided wire constituting the conductor 10. This allows independent behavior of the conductor 10 and the insulating molding 20 . Therefore, it is possible to allow the conductor 10 to move in the longitudinal direction with respect to the insulating molded body 20 when the solid insulating busbar 1 is bent. The cross-sectional shape and cross-sectional dimensions of the inner circumference of the internal semiconducting layer 21 are, as shown in FIG. In the case of this example, as shown in FIG. 2, the cross-sectional shape of the inner periphery of the inner semi-conductive layer 21 is rectangular.

Here, the gap 12 formed between the outer peripheral surface of the conductor 10 and the inner peripheral surface of the internal semiconducting layer 21 in the insulating molded body 20 allows independent behavior of the conductor 10 and the insulating molded body 20. is. The size of the gap 12 is, for example, 0.2 mm or more and 1.5 mm or less, and further 0.5 mm or more and 1.0 mm or less. When the gap 12 is 0.2 mm or more, it is possible to sufficiently allow independent behavior of the conductor 10 and the insulating molded body 20, and furthermore, when the solid insulated busbar 1 is manufactured, the conductor may be formed in the inner semiconductor layer 21. 10 is easy to insert.

The inner periphery of the internal semiconductive layer 21, that is, the portion of the insertion hole 200 where the terminal 11G is arranged has a rectangular cross-sectional shape corresponding to the cross-sectional shape of the terminal 11G, and the cross-sectional dimension thereof is larger than the cross-sectional dimension of the terminal 11G. is also big. Therefore, a gap exists between the outer peripheral surface of the terminal 11G and the inner peripheral surface of the internal semi-conductive layer 21 . On the other hand, of the inner periphery of the internal semi-conductive layer 21, the cross-sectional shape of the portion where the base portion 11b of the terminal 11T is arranged is a circular shape corresponding to the cross-sectional shape of the base portion 11b. In this example, the portion of the internal semi-conductive layer 21 where the terminal 11T is arranged has a cross-sectional dimension slightly smaller than the cross-sectional dimension of the base portion 11b before the terminal 11T is arranged. Therefore, when the terminal 11T is arranged in the insulating molded body 20, the elastic force of the insulating molded body 20 causes the outer peripheral surface of the base portion 11b of the terminal 11T and the inner peripheral surface of the inner semiconductive layer 21 of the insulating molded body 20 to is closely attached. As a result, the terminal 11T is crimped and fixed in the insulating molded body 20, and the conductor 10 with the terminals 11G and 11T and the insulating molded body 20 are integrated. In this example, the cross-sectional dimension of the base portion 11b of the terminal 11T is larger than the cross-sectional dimension of the conductor 10, and the cross-sectional dimension of the terminal 11G is equal to or smaller than the cross-sectional dimension of the conductor 10. FIG.

The inner semi-conducting layer 21 and the outer semi-conducting layer 23 are made of a semi-conducting material. The insulating layer 22 is made of an insulating material. In this example, the inner semi-conductive layer 21 and the outer semi-conductive layer 23 are made of a semi-conductive rubber material such as semi-conductive silicone rubber. The insulating layer 22 is made of an insulating rubber material such as insulating silicone rubber. The respective thicknesses of the inner semiconductive layer 21, the insulating layer 22, and the outer semiconductive layer 23 are appropriately set according to the current flowing through the conductor 10, the applied voltage, and the like. In FIG. 2, the thickness of each layer of the inner semiconductive layer 21 and the outer semiconductive layer 23 in the portion covering the conductor 10 is, for example, 2 mm or more and 15 mm or less. Moreover, the thickness of the insulating layer 22 is, for example, 5 mm or more and 30 mm or less.

In this example, both ends 23eg and 23et of the outer semi-conductive layer 23 and the inner semi-conductive layer 21 are made of a semi-conductive rubber material. Of the outer semi-conductive layer 23, an intermediate portion 23m connecting between the end portions 23eg and 23et is formed by coating the insulating layer 22 with a semi-conductive rubber paint. The outer semi-conductive layer 23 may be formed of a semi-conductive rubber material over its entire length, or both end portions 23eg and 23et and an intermediate portion 23m may be integrally formed of a semi-conductive rubber material. The insulating layer 22 is molded from an insulating rubber material.

(End of insulating molded body)
The configuration of the end portion of the insulating molded body 20 in this example will be described in detail with appropriate reference to FIG. A connection opening 25T into which the base end side of the bushing 4T is fitted is provided at the end 20T of the insulating molded body 20 on the Tr side. On the other hand, the end portion 20G of the insulating molded body 20 on the GIS side is provided with a connection opening portion 25G into which the base end side of the bushing 4G is fitted. The connection openings 25G and 25T are formed by the insulating layer 22, and the edges 23eg and 23et of the external semiconductive layer 23 are provided on the outer periphery of the insulating layer 22. As shown in FIG. The inner peripheral surfaces of the connection openings 25G and 25T have a truncated cone shape that decreases in diameter from the opening side toward the bottom side. Terminals 11G and 11T are exposed on the bottom sides of the connection openings 25G and 25T. The base ends of bushings 4G and 4T through which conductor pull-out rods 3G and 3T, which will be described later, are inserted are inserted into the connection openings 25G and 25T, respectively, and the terminals 11G and 11T and the conductor pull-out rods 3G and 3T are connected. be. In the case of this example, the proximal end sides of bushings 4G and 4T are press-fitted into the connection openings 25G and 25T, respectively.

Flanges 55 are attached to the ends 23eg, 23et of the outer semi-conductive layer 23 in the connection openings 25G, 25T. The flange 55 is an annular member attached to the flange portion 45 provided on the bushings 4G and 4T, and is made of brass, for example.

In this example, as shown in FIG. 1, the shape of the connection opening 25T on the Tr side is different from the shape of the connection opening 25G on the GIS side. The connection opening 25T is formed by protruding the insulating layer 22 in the axial direction from the end of the inner semi-conductive layer 21, and opens on the extension line of the inner semi-conductive layer 21 in the axial direction. On the other hand, the connection opening 25</b>G is formed by projecting the insulating layer 22 from the end of the inner semi-conductive layer 21 in a direction crossing the axial direction, and is opened in the direction crossing the axial direction of the inner semi-conductive layer 21 . are doing. In this example, the direction intersecting with the axial direction is the orthogonal direction. A work opening 26 is provided on the opposite side of the connection opening 25G across the terminal 11G. Similarly to the connection opening 25G, the working opening 26 is also formed of the insulating layer 22, and the outer periphery of the insulating layer 22 is provided with the end portion 23eg of the external semiconductive layer 23. As shown in FIG. The inner peripheral surface of the work opening 26 also has a truncated cone shape that decreases in diameter from the opening side toward the bottom side. A flange 56 is attached to the end 23eg of the outer semiconductive layer 23 in the working opening 26 .

(Form of hollow end)
The connection openings 25G and 25T and the working openings 26 provided at the ends of the insulating molded body 20 are all provided in a hollow end portion 50 formed in a hollow shape, as shown in FIGS. It is The configuration of the hollow end portion 50 will be described below mainly with reference to FIG. 5 and with appropriate reference to FIG.

The configuration of the hollow end portion 50 having the connection opening 25T will be described.
The internal semiconducting layer 21 gradually increases in thickness from the vicinity of the Tr side end of the conductor 10 toward the terminal 11T side, covers the entire periphery of the base 11b with a substantially constant thickness, and further extends halfway through the tip 11a. has a length of up to However, the Tr-side end portion of the internal semi-conductive layer 21 is formed so as to overlap the tip portion 11a with a gap therebetween without being in contact with the tip portion 11a. The Tr-side end of the inner semi-conductive layer 21 covers the outer circumference of the base-end side of the conductor lead-out rod 3T, which will be described later.
The end portion 23et of the external semiconductive layer 23 is formed into a cylindrical body having a length extending from a position substantially corresponding to the Tr-side end portion of the base portion 11b of the terminal 11T to the Tr-side end portion of the solid insulating bus 1. It is The end portion 23et has a shape in which the inner diameter gradually decreases from the GIS side to the Tr side, so that the thickness increases toward the Tr side.
The insulating layer 22 covers the Tr-side end of the inner semi-conductive layer 21 with a substantially constant thickness, and has a length reaching the opening edge 27 of the end 23et of the outer semi-conductive layer 23 . The Tr-side end of the insulating layer 22 is formed to protrude in a cylindrical shape from the position of the Tr-side end of the internal semi-conductive layer 21 toward the opening edge 27 of the end 23et. The end portion of the insulating layer 22 on the Tr side has a tapered shape in which the thickness becomes thinner toward the opening edge 27 of the end portion 23et, and has a conical inner peripheral surface in which the inner diameter gradually increases.

The inner peripheral surface of the hollow end portion 50 having the connection opening 25T is composed of the inner peripheral surface of the inner semiconductive layer 21, the inner peripheral surface of the insulating layer 22, and the outer semiconductive layer 23 in order from the GIS side to the Tr side. is configured by the inner peripheral surface of That is, the Tr-side edge of the internal semi-conductive layer 21 and the Tr-side edge of the insulating layer 22 do not reach the end surface of the hollow end portion 50 having the connection opening 25T. The end face of the hollow end portion 50 having the connection opening 25T is constituted by the end face of the annular outer semi-conductive layer 23, that is, the second end face 232. As shown in FIG.

The hollow end portion on the GIS side will be described. The hollow end on the GIS side is a T-shaped hollow end as shown in FIG. The hollow end portion on the GIS side has a central internal space having an axis coaxial with the axial direction of the internal semiconducting layer 21, and branches branching from this central internal space and having axes perpendicular to the axial direction of the internal semiconducting layer 21. have internal space. The central internal space and the branch internal spaces are in communication. The central internal space is constituted by the inner peripheral space of the internal semi-conductive layer 21 , that is, the insertion hole 200 . The hollow end on the GIS side comprises a hollow end 50 with a working opening 26 and a hollow end 50 with a connecting opening 25G.

The internal semi-conductive layer 21 extends continuously from the Tr side to the GIS-side end of the terminal 11G. The GIS-side end of the inner semi-conductive layer 21 has a closed tip and covers the terminal 11G with a substantially constant thickness. However, a hole 211 communicating in a direction perpendicular to the axial direction is provided at a position slightly on the Tr side from the tip of the inner semi-conductive layer 21 on the GIS side. When the conductor 10 with the terminals 11G and 11T is inserted into the internal semiconductive layer 21, the area of the hole 211 of the terminal 11G on the other end side, which is the GIS side, is not covered with the internal semiconductive layer 21, and the branch internal space is formed. exposed to
The end portion 23eg of the external semi-conductive layer 23 is formed integrally with the cylindrical head perpendicular to the GIS-side end portion of the internal semi-conductive layer 21 and is formed integrally with the cylindrical head so as to and a hollow shaft protruding from the intermediate position toward the Tr side. The end portion 23eg is formed in a T-shaped hollow body. The hollow shaft portion covers up to the vicinity of the GIS-side end of the conductor 10 . The inner space of the cylindrical head and the hollow shaft communicate with each other. The cylindrical head portion of the end portion 23eg has openings at both ends and is formed so as to increase in thickness from the center side toward the opening edges 271 and 272 side. A hollow shaft portion of the end portion 23eg extends from the GIS side toward the Tr side with a substantially constant thickness, and has an opening edge 273 on the Tr side. That is, the end portion 23eg has three openings, and communicates with the internal space from any of the openings.
The insulating layer 22 has a length that covers up to the GIS-side end of the inner semi-conductive layer 21 . The end portion of the insulating layer 22 on the GIS side is provided on the inner peripheral side of the end portion 23eg of the external semi-conductive layer 23, and the inner semi-conductive layer 21 is provided so as not to block the hole 211 of the internal semi-conductive layer 21. is formed in a cylindrical shape orthogonal to the GIS side end of the . The end portion of the insulating layer 22 on the GIS side has a tapered shape that is thicker toward the center and becomes thinner toward the opening edges 271 and 272 of the end portion 23eg. have.

A hollow end 50 having a working opening 26 is formed by the insulating layer 22 and the outer semi-conductive layer 23 . The inner peripheral surface of the hollow end portion 50 having the working opening 26 is formed by the inner peripheral surface of the insulating layer 22 . That is, the inner peripheral surface of the working opening 26 does not have the inner semi-conductive layer 21 . The end faces of the hollow end portion 50 having the working opening 26 are the end face of the annular insulating layer 22, namely the first end face 221, and the end face of the external semi-conductive layer 23 provided on the outer periphery thereof, namely the first end face 231. Configured. A hollow end portion 50 having a connection opening 25G is formed of the insulating layer 22 and the external semiconductive layer 23. As shown in FIG. The inner peripheral surface of the hollow end portion 50 having the connection opening 25G is composed of the inner peripheral surface of the insulating layer 22 and the inner peripheral surface of the external semiconducting layer 23 in order from the bottom side toward the opening side. That is, the inner peripheral surface of the connection opening 25G does not have the inner semiconductive layer 21 . The inner peripheral surface of the outer semi-conductive layer 23 includes an opening edge 272 . The end surface of the hollow end portion 50 having the connection opening 25G is constituted by the end surface of the annular outer semi-conductive layer 23, that is, the second end surface 232. As shown in FIG.

The GIS-side hollow end 50 having the working opening 26 and the connection opening 25G and the Tr-side hollow end 50 having the connection opening 25G communicate with each other in the internal space.

Examples of the form of the hollow end portion 50 include the forms shown below.

<First hollow end>
A first form has a first end face of an insulating layer and a first end face of an outer semi-conductive layer, wherein the first end face of the insulating layer is a machined working surface. is.
<Second hollow end>
A second form has a second edge of the outer semi-conductive layer and a second edge of the insulating layer positioned on the inner peripheral surface of the outer semi-conductive layer without reaching the second edge of the outer semi-conductive layer. Two hollow end configurations.
<Third Hollow End>
A third form has a third end surface of an insulating layer and a third end surface of an external semiconductive layer, and the third end surface of the insulating layer is a molding surface formed by a mold. is in the form of

One of the hollow end portions 50 must be composed of the first hollow end portion, and the others are composed of at least one of the second hollow end portion and the third hollow end portion. .

In this case, the hollow end 50 with the working opening 26 is constituted by the first hollow end. The working opening 26 has a first end face 221 of the insulating layer 22 and a first end face 231 of the end 23eg of the outer semi-conductive layer 23, as shown in FIG. A first end surface 221 of the insulating layer 22 is a machined surface. Further, each hollow end portion 50 having connection openings 25G and 25T is constituted by a second hollow end portion. The connection openings 25G and 25T are, as shown in FIG. and a second edge 222 of insulating layer 22 located on surface 230 . In the case of this example, none are constituted by a third hollow end.

In this example, the first end surface 221 of the insulating layer 22 and the first end surface 231 of the end portion 23eg of the external semiconductive layer 23 are exposed to the end surface of the first hollow end portion 50 having the working opening 26. is provided. The first end surface 221 and the first end surface 231 are substantially flush with each other. The first end surface 221 here is a region formed of a flat surface excluding an inclined surface formed on the inner peripheral side of the opening edge of the working opening 26 .

Although details will be described later, the processed surface of the first end surface 221 of the insulating layer 22 is formed by machining the portion where the insulating material overflows when the insulating layer 22 is formed by filling the insulating material in the mold. It is formed by removing. The first end surface 221 of the insulating layer 22 is provided at the final filling portion where the insulating material is finally filled into the mold when molding the insulating layer 22 . As a result, the insulating material overflows from the portion of the first end surface 221 that will be the final filled portion of the insulating material when the insulating layer 22 is molded, and voids are generated in the insulating layer 22 by removing the gas in the mold. it gets harder. Even if voids were to occur in the insulating layer 22 , the locations of voids would be concentrated in the vicinity of the first end surface 221 . Machining includes, for example, cutting, cutting, grinding, and polishing, and the processed surface of the first end surface 221 is, for example, a cut surface, a cut surface, a ground surface, a polished surface, and the like. Each of these processed surfaces has scratch marks such as cutting marks, cutting marks, grinding marks or polishing marks.

The width of the first end surface 221 of the insulating layer 22 is, for example, 0.2 mm or more and 1.5 mm or less, and further 0.5 mm or more and 1.0 mm or less. The width of the first end face 221 is the length of the first end face 221 in the radial direction. If the width of the first end surface 221 is 0.2 mm or more, gas in the mold can easily escape from the first end surface 221 portion when the insulating layer 22 is molded. If the width of the first end face 221 is 1.5 mm or less, the radial thickness of the outer semi-conductive layer 23 at the first hollow end 50, that is, the working opening 26 becomes relatively too thin. can be suppressed.

Here, the void area ratio of the insulating layer 22 in the working opening 26 that is the first hollow end 50 is, for example, 30% or less, and further 10% or less. When the void area ratio of the insulating layer 22 is 30% or less, it is possible to sufficiently suppress the deterioration of the insulating properties. In addition, since the locations of voids in the insulating layer 22 are concentrated in the vicinity of the first end surface 221, it is possible to suppress the occurrence of voids in the portion to which electrical stress is applied, thereby suppressing deterioration of the insulation characteristics. The area ratio of voids can be obtained, for example, as follows. The first hollow end 50, i.e., the area of 100 mm ² (for example, 10 mm × 10 mm) along the axial direction from the first end surface 221 of the inner peripheral surface of the insulating layer 22 in the working opening 26 is viewed internally. Observe with a mirror. Then, the area ratio of voids in the observation area can be obtained by image processing.

<Method for manufacturing insulating molded body>
A method of manufacturing the insulating molded body 20 of the first embodiment shown in FIG. 1 will be described with reference to FIGS. The method for manufacturing the insulating molded body 20 includes the following first to fifth steps.
First step: a step of forming the inner semi-conductive layer 21 Second step: a step of forming the ends 23eg and 23et of the outer semi-conductive layer 23 Third step: the inner semi-conductive layer 21 and the outer semi-conductive layer 23 A step of arranging the ends 23eg and 23et in the mold 9. A fourth step: A step of inserting cores 95a to 95c inside the ends 23eg and 23et of the inner semiconductive layer 21 and the outer semiconductive layer 23. Fifth step: A step of filling the mold with an insulating material to form the insulating layer 22 shown in FIG. 5 Sixth step: A step of removing predetermined portions of the insulating layer 22 shown in FIG. Each step will be described in detail below.

(First step)
The first step is to form a tubular inner semi-conductive layer 21 . An insertion hole 200 is formed in the inner semi-conductive layer 21 along the axial direction from one end on the Tr side toward the other end on the GIS side. In this example, as shown in FIG. 2, the cross-sectional dimension of the inner periphery of the inner semi-conductive layer 21, ie, the portion of the insertion hole 200 where the conductor 10 is arranged, is made larger than the cross-sectional dimension of the conductor 10. As shown in FIG. The molding of the inner semi-conductive layer 21 can be performed using a mold. Specifically, by using a mold having a core for forming the insertion hole 200 and filling the mold with a semiconductive material, the inner semiconductive layer 21 is molded with the semiconductive material. In this example, a semiconductive rubber material is used for the semiconductive material.

(Second step)
The second step forms the ends 23eg, 23et of the hollow outer semi-conductive layer 23 with opening edges. In this example, the end 23eg of the external semi-conductive layer 23 on the GIS side is a T-shaped hollow body as described above, and the three openings communicate with each other in the internal space. As shown in FIG. 5, the end portion 23eg forms an inner peripheral surface 230 by forming a cylindrical portion where the working opening portion 26 and the connection opening portion 25G are formed. An end portion 23et of the outer semi-conductive layer 23 on the Tr side is formed into a cylindrical body. As shown in FIG. 5, the end portion 23et forms an inner peripheral surface 230 by forming a cylindrical portion where the connection opening 25T is formed. The molding of the ends 23eg and 23et of the external semi-conductive layer 23 can be performed using a mold. Specifically, by using a mold having a core that forms the inner peripheral surface 230 and filling the mold with a semiconductive material, the ends 23eg and 23et of the outer semiconductive layer 23 are made semiconductive. Mold with material. In this example, a semiconductive rubber material is used for the semiconductive material.

Further, in the case of this example, the flanges 56 and 55 are formed on the end surfaces 231 and 232 of the end portion 23eg of the outer semiconductive layer 23 on the GIS side by molding with the flanges 55 and 56 arranged in the mold. unify. At the end 23et of the external semi-conductive layer 23 on the Tr side, the flange 55 is integrated with the end face 232 by molding with the flange 55 arranged in the mold.

The order of the first step and the second step is not particularly limited. For example, the second step may be performed after the first step, or the first step may be performed after the second step. It is also possible to perform the first step and the second step simultaneously.

(Third step)
In the third step, as shown in FIG. 4, the inner semi-conductive layer 21 and the ends 23eg and 23et of the outer semi-conductive layer 23 are arranged in the mold 9. As shown in FIG. In the third step, the end portions 23eg and 23et of the outer semiconductive layer 23 are spaced apart from each other at least in the vicinity of the outer periphery of both ends of the inner semiconductive layer 21 . A space formed between the inner semiconducting layer 21 and the ends 23eg and 23et of the outer semiconducting layer 23 is a filling space of the insulating layer 22 shown in FIG.

(Fourth step)
In the fourth step, cores 95a-95c are inserted inside the ends 23eg and 23et of the inner semi-conductive layer 21 and the outer semi-conductive layer 23, respectively. In the fourth step, a gap 92 is formed between the outer peripheral surface of the core 95 a and the inner peripheral surface 230 including the opening edge 271 in the external semiconductive layer 23 .

The configuration of the mold 9 shown in FIG. 4 will be described. The mold 9 is composed of a pair of split molds 91 that can be opened and closed in a direction orthogonal to the vertical direction, with a plane passing through the central axis of the inner semi-conductive layer 21 as a split plane. In FIG. 4, only one split mold 91 is illustrated. By closing and combining a pair of split molds 91 in a direction orthogonal to the plane of the paper, a cavity 90 that is a space for molding the insulating layer 22 shown in FIG. 5 is formed in the mold 9 .

In this example, the ends 23eg, 23et of the outer semi-conductive layer 23 are placed in the mold 9 with the flanges 55, 56 fixed to the mold 9. FIG. Inside the end 23eg on the GIS side, cores 95a and 95b forming the working opening 26 and the connecting opening 25G shown in FIG. 5 are inserted. The core 95a has a truncated cone shape and is formed to have a gap 92 between the outer peripheral surface of the core 95a and the inner peripheral surface including the opening edge 271 of the end portion 23eg. The gap 92 is provided upward of the mold 9 . The core 95b has a truncated cone shape and is formed so as to be in close contact with the opening edge 272 of the end portion 23eg. A core 95c forming the connection opening 25T shown in FIG. 5 is inserted inside the Tr-side end 23et. The core 95c has a truncated cone shape and is formed so as to be in close contact with the opening edge 27 of the end portion 23et. The core 95c is integrally provided with a rod-shaped portion 96 that is inserted into the inner semiconductive layer 21, that is, into the insertion hole 200. As shown in FIG. The inner semi-conductive layer 21 is placed in the mold 9 with the rod-like portion 96 of the core 95 c inserted into the insertion hole 200 of the inner semi-conductive layer 21 . The GIS-side end of the bar-shaped portion 96 is sandwiched between the cores 95a and 95b in a direction perpendicular to the core 95c. In this example, after the core 95c is inserted inside the end portions 23et of the inner semi-conductive layer 21 and the outer semi-conductive layer 23, the end portions 23eg of the inner semi-conductive layer 21 and the outer semi-conductive layer 23 are inserted into the mold 9. , 23et. After that, the core 95a and the core 95b are inserted inside the end portion 23eg of the outer semi-conductive layer 23. As shown in FIG.

The order of the third step and the fourth step is not particularly limited. For example, the fourth step may be performed after the third step, or the third step may be performed after the fourth step. Specifically, after the end portions 23eg and 23et of the inner semi-conductive layer 21 and the outer semi-conductive layer 23 are arranged in the mold 9, the end portions 23eg and 23et of the inner semi-conductive layer 21 and the outer semi-conductive layer 23 are placed. The cores 95a-95c may be inserted inside. Alternatively, after inserting the cores 95a to 95c inside the end portions 23eg and 23et of the inner semiconductive layer 21 and the outer semiconductive layer 23, the inner semiconductive layer 21 and the end portions 23eg and 23et of the outer semiconductive layer 23 are may be placed in the mold 9.

(Fifth step)
In the fifth step, the mold 9 with the gap 92 facing upward is filled with an insulating material so that the insulating material overflows the gap 92 . Then, as shown in FIG. 5, the insulating layer 22 that integrates the inner semiconductive layer 21 and the ends 23eg and 23et of the outer semiconductive layer 23 is formed. In this example, an insulating rubber material is used as the insulating material.

As shown in FIG. 4 , the mold 9 communicates with a cavity 90 in the mold 9 and communicates with a gate portion 93 for injecting an insulating material into the cavity 90 and a gap 92 . and an overflow portion 94 for receiving liquid material. The gate portion 93 may be a film gate extending along the axial direction of the inner semiconducting layer 21 . When molding the insulating layer 22 using the mold 9 shown in FIG. 4, the insulating material is injected from the gate portion 93 into the cavity 90 to fill the cavity. After the cavity 90 is filled with the insulating material, the insulating material overflowing from the gap 92 provided above the mold 9 is caused to flow out to the overflow portion 94 . Therefore, the gap 92 provided above the mold 9 is positioned at the final filling portion of the insulating material, and the insulating material overflows from the gap 92 to allow the gas in the cavity 90 to be released.

After the insulating layer 22 is molded, the molded body shown in FIG.

(Sixth step)
Insulating layer 22 has burrs, which are surplus portions of the insulating material formed in gate portion 93 , and surplus portions formed in overflow portion 94 by overflowing insulating material from gap 92 . A sixth step is to remove the excess portion of the insulating layer 22 by machining.

Further, after the insulating layer 22 is molded, a semiconductive paint is applied to the exposed portions of the insulating layer 22 between the end portions 23eg and 23et of the outer semiconductive layer 23 to the molded body shown in FIG. An intermediate portion 23m of the conductive layer 23 is formed. In this example, a conductive rubber paint is used as the semi-conductive paint. Thereby, the insulating molded body 20 shown in FIG. 1 is obtained.

In the case of this example, as shown in FIG. 5, a gap 92 is provided at the location where the working opening 26 is formed, and the gap 92 is filled with an insulating material. Therefore, after molding the insulating layer 22, the first end surface 221 of the insulating layer 22 is exposed from the opening edge 271 of the outer semi-conductive layer 23, as shown in FIG. A machined surface is formed on the first end surface 221 of the insulating layer 22 by removing the surplus portion formed by the overflow portion by the above-described machining. Therefore, the hollow end portion 50 having the working opening 26 has the first end surface 221 of the insulating layer 22 and the first end surface 231 of the end portion 23eg of the external semiconductive layer 23, and the first end surface 221 is processed. It is constituted by a first hollow end which is a plane.

At the location where the connection opening 25G shown in FIG. 5 is formed, the core 95b and the opening edge 272 of the external semi-conductive layer 23 are in close contact. Similarly, in the connection opening 25T shown in FIG. 5, the core 95c and the opening edge 27 of the external semi-conductive layer 23 are in close contact with each other. Therefore, after forming the insulating layer 22, the insulating layer 22 is formed so as to be positioned on the inner peripheral surface 230 of the end portions 23eg, 23et of the outer semi-conductive layer 23 as shown in FIG. A second edge 222 will be formed. Therefore, the hollow end portion 50 having the connection openings 25G and 25T is located inside the end portions 23eg and 23et without reaching the second end surfaces 232 of the end portions 23eg and 23et of the outer semi-conductive layer 23 and the second end surfaces 23eg and 23et. A second hollow end with a second edge 222 of the insulating layer 22 located on the peripheral surface 230 .

<Manufacturing method of solid insulated busbar>
A method for manufacturing the solid insulated busbar 1 of Embodiment 1 shown in FIG. 1 will be described. The method for manufacturing the solid insulated busbar 1 includes the steps of manufacturing the insulating molded body 20 by the above-described manufacturing method of the insulating molded body 20, and the steps of inserting the conductor 10 into the inner semiconducting layer 21 from one end side of the insulating molded body 20. And prepare.

In this example, the terminals 11G and 11T are attached to the ends of the conductor 10 to prepare the conductor 10 with the terminals 11G and 11T. Then, by inserting the conductor 10 with the terminals 11G and 11T into the inner semi-conductive layer 21 from one end of the insulating molded body 20 on the Tr side, the solid insulating bus 1 is manufactured.

In this example, the inner circumference of the inner semiconducting layer 21, that is, the cross-sectional dimension of the insertion hole 200 is larger than the cross-sectional dimension of the conductor 10. Therefore, as shown in FIG. The conductor 10 can be inserted while holding it. Therefore, the inner semiconductive layer 21 does not adhere to the outer peripheral surface of the conductor 10, and the gap 12 allows the conductor 10 to move in the longitudinal direction with respect to the insulating molded body 20 when the solid insulating bus bar 1 is bent. Further, the cross-sectional dimension of the portion of the internal semi-conductive layer 21 into which the base portion 11b of the terminal 11T is inserted is slightly smaller than the cross-sectional dimension of the base portion 11b. Therefore, by pressing the base portion 11b of the terminal 11T into the inner semi-conductive layer 21 and elastically deforming the insulating molded body 20, the terminal 11T is fixed in the insulating molded body 20 in a crimped state. Thereby, the conductor 10 with the terminals 11G and 11T and the insulating molding 20 can be integrated.

A connection structure 100 using the solid insulating busbar 1 will be described below with reference to FIG.

A connection structure 100 shown in FIG. 3 uses a solid insulated busbar 1 for connection between a GIS as a mating device 101 and a transformer. The solid insulated busbar 1 is connected to the mating device 101 via the conductor pull-out rods 3G and 3T. In the connection structure 100, the height position of the connection point 102 of the mating device 101 is different, and the solid insulation busbar 1 is bent and arranged. The connection portion 102 may be a lead wire or the like.

(Conductor pull-out rod)
The conductor pull-out rods 3G and 3T are connected to the terminals 11G and 11T of the solid insulated bus 1 on the base end side, respectively, and connected to each connection point 102 of the mating device 101 , GIS or transformer, on the tip end side. As a result, the terminals 11G and 11T of the solid insulated busbar 1 are electrically connected to the connecting point 102 of the mating device 101 via the conductor lead-out rods 3G and 3T, and the GIS and the transformer are electrically connected via the solid insulated busbar 1. connected to The conductor pull-out rods 3G, 3T are made of copper, for example.

In this example, the connection between the terminal 11T on the Tr side and the conductor pull-out rod 3T is performed by fitting the distal end portion 11a of the terminal 11T into the insertion hole 30 formed in the end face of the conductor pull-out rod 3T on the base end side. there is On the other hand, the connection between the terminal 11G on the GIS side and the conductor pull-out rod 3G is performed by connecting the terminal 11G from the working opening 26 side to the terminal 11G while the surface of the terminal 11G and the end face of the conductor pull-out rod 3G on the base end side are in contact with each other. A bolt 113 is inserted through the formed through hole 112 to fix the conductor pull-out rod 3G with the bolt 113. As shown in FIG. The work opening 26 is provided to perform the work of fastening the bolt 113 .

(bushing)
The bushings 4G, 4T are tubular members that cover the outer circumferences of the conductor pull-out rods 3G, 3T. Conductor pull-out rods 3G, 3T are inserted through the bushings 4G, 4T in the longitudinal direction thereof. The bushings 4G and 4T are made of epoxy resin, for example. In this example, a resin material such as an epoxy resin forming the bushings 4G and 4T is molded around the outer circumference of the conductor pull-out rods 3G and 3T, and the bushings 4G and 4T are integrally formed with the conductor pull-out rods 3G and 3T. .

The base ends of the bushings 4G and 4T are provided with insertion regions that are fitted into the connection openings 25G and 25T of the solid insulation busbar 1, respectively. The outer peripheral surfaces of the insertion regions of the bushings 4G and 4T have a shape corresponding to the inner peripheral surfaces of the connection openings 25G and 25T, and are formed in a truncated cone shape that tapers toward the base end. The outer diameter of the insertion area of the bushings 4G, 4T is slightly larger than the inner diameter of each connection opening 25G, 25T before the bushings 4G, 4T are inserted. Therefore, when the base ends of the bushings 4G and 4T are inserted into the connection openings 25G and 25T respectively, the insertion regions of the bushings 4G and 4T are fixed in the connection openings 25G and 25T in a crimped state.

The bushings 4G and 4T are each provided with a flange portion 45 protruding radially outward from the outer peripheral surface thereof. The flange portion 45 is located on the distal end side of the insertion regions of the bushings 4G and 4T, and is annularly formed on the outer peripheral surfaces of the bushings 4G and 4T. The outer peripheral surface of the flange portion 45 protrudes radially outward from the end surface of the solid insulating busbar 1, specifically the end surfaces of the connection openings 25G and 25T, and is radially outward from the outer peripheral surface of the flange 55. protrudes to A flange 55 is attached to the end face of the flange portion 45 on the base end side, and a mounting flange 8, which will be described later, is attached to the end face of the distal end side. In this example, the flange 55 and the mounting flange 8 are fixed to the flange portion 45 with bolts. A seal groove is formed in each of the end surfaces of the flange 55 and the mounting flange 8 facing the flange portion 45, and a seal member is fitted in each seal groove. As a result, it is possible to prevent water from entering the inside from between the flange portion 45 and the flange 55 and the mounting flange 8 . The sealing member is, for example, a rubber O-ring.

In this example, the bushing 4G on the GIS side and the bushing 4T on the Tr side have different shapes. The bushing 4T on the Tr side has a longer area than the bushing 4G on the GIS side in the area opposite to the insertion area with the flange part 45 interposed therebetween, and a plurality of flange parts are formed along the outer circumference in the longitudinal direction. . This flange secures the creepage distance.

(mounting flange)
The mounting flange 8 is an annular member interposed between each flange portion 45 of the bushings 4G and 4T and each housing 104 of the mating device 101, and is made of brass, for example. The outer peripheral surface of the mounting flange 8 protrudes radially outward from the outer peripheral surface of the flange portion 45 . A seal groove is formed in the end surface of the mounting flange 8 facing the housing 104, and a seal member is fitted in the seal groove. As a result, water can be prevented from entering the interior from between the housing 104 and the mounting flange 8 . The sealing member is, for example, a rubber O-ring.

(others)
An insulating plug 7 is fitted into a working opening 26 formed in the GIS-side end portion 1G of the solid insulating busbar 1 . The insulating plug 7 has a shape corresponding to the inner peripheral surface of the working opening 26 and is formed in a truncated cone shape that tapers toward the bottom side of the working opening 26 . The outer diameter of the insulating plug 7 is slightly larger than the inner diameter of the working opening 26 before the insulating plug 7 is inserted. Therefore, when the insulating plug 7 is inserted into the working opening 26 , the insulating plug 7 is crimped and fixed in the working opening 26 .

A lid 6 is attached to a flange 56 provided in the working opening 26 , and the inside of the working opening 26 is sealed with the lid 6 . The lid 6 is a disk-shaped member and is made of brass, for example. In this example, the lid 6 is bolted to the flange 56 . A seal groove is formed in the end surface of the flange 56 facing the lid 6, and a seal member is fitted in the seal groove. As a result, water can be prevented from entering inside from between the lid 6 and the flange 56 . The sealing member is, for example, a rubber O-ring.

Embedded electrodes 71 and 72 are embedded in the insulating plug 7 in the vicinity of the bolt 113 connecting the terminal 11G and the conductor lead-out rod 3G and in the vicinity of the lid 6, respectively.

"effect"
The insulating molded body 20, the solid insulating busbar 1, the manufacturing method of the insulating molded body 20, and the manufacturing method of the solid insulating busbar 1 according to the first embodiment described above have the following effects.

In the insulating molded body 20 of the above-described embodiment, the working opening 26 is configured by the first hollow end portion, so that the first end surface 221 of the insulating layer 22 has an insulating property when the insulating layer 22 is molded. It can be provided at the final filling of the material. As a result, it is possible to suppress the generation of voids in the insulating layer 22 by causing the insulating material to overflow from the portion that will become the first end surface 221 during molding of the insulating layer 22 and by releasing the gas in the mold.

Since the solid insulating busbar 1 of the above-described embodiment includes the insulating molded body 20 of the above-described embodiment, the insulating layer 22 in the insulating molded body 20 has few voids and the insulating layer 22 has excellent insulation properties. In addition, since the conductor 10 is inserted into the inner semiconductive layer 21 of the insulating molded body 20 with the gap 12 therebetween, the insulating molded body 20 is not in close contact with the outer peripheral surface of the conductor 10 . Therefore, since the conductor 10 is allowed to move in the longitudinal direction with respect to the insulating molded body 20 when the solid insulating bus 1 is bent, the solid insulating bus 1 is easy to bend.

In the method of manufacturing the insulating molded body 20 of the embodiment described above, the gap 92 is formed between the core 95a inserted inside the end portion 23eg of the outer semi-conductive layer 23 and the opening edge 271 of the outer semi-conductive layer 23. , an insulating material is filled in the mold 9 with the gap 92 directed upward, and the insulating layer 22 is formed. In the fifth step of molding the insulating layer 22, the gap 92 provided above the mold 9 is positioned at the final filling portion. Therefore, it is possible to suppress the generation of voids in the molded insulating layer 22 by causing the insulating material to overflow from the gap 92 to release the gas in the mold 9 .

Since the method for manufacturing the solid insulating busbar 1 of the embodiment described above uses the insulating molded body 20 manufactured by the method for manufacturing the insulating molded body 20 of the embodiment described above, the voids in the insulating layer 22 are few and the insulating layer 22 It is possible to manufacture a solid insulated bus bar 1 having excellent insulating properties.

[Embodiment 2]
In Embodiment 1, the hollow end portion 50 having the working opening 26 is configured by the first hollow end portion, and the other hollow end portions 50 having the connection openings 25G and 25T are all the second hollow end portions. A configuration has been described which is constituted by a hollow end of the . In the second embodiment, an example in which the hollow end 50 having the connection opening 25T on the Tr side in the first embodiment is changed to a third hollow end will be described with reference to FIGS. The insulating molded body 20 of Embodiment 2 shown in FIG. 6 has the same configuration as the insulating molded body 20 of Embodiment 1 shown in FIG. 1 except that the configuration of the connection opening 25T is changed to a third hollow end. Identical components are denoted by the same reference numerals, and descriptions thereof are omitted.

In this example, the hollow end portion 50 having the connection opening 25T is constituted by the third hollow end portion. As shown in FIG. 6, the connection opening 25T has a third end surface 223 of the insulating layer 22 and a third end surface 233 of the end portion 23et of the external semi-conductive layer 23, and the third end surface of the insulating layer 22 A molding surface 223 is molded by the mold. In this example, the third end surface 223 of the insulating layer 22 and the third end surface 233 of the end portion 23et are exposed at the end surface of the third hollow end portion 50 having the connection opening 25T. The third end face 223 and the third end face 233 are substantially flush with each other.

In the case of the third hollow end portion having the connection opening 25T, as shown in FIG. A gap 92 is formed with the inner peripheral surface 230 including the opening edge 27 of 23et. The open end of the gap 92 in the axial direction is closed by the split mold 91 and the core 95c that constitute the mold 9. As shown in FIG. In the case of this example, a gap 92 shown in FIG. 7 is provided at the location where the connection opening 25T shown in FIG. 6 is formed, and the gap 92 is filled with an insulating material. Therefore, after molding the insulating layer 22, the third end surface 223 of the insulating layer 22 is exposed from the opening edge 27 of the outer semi-conductive layer 23, as shown in FIG. Further, the open end of the gap 92 is closed by the inner surface of the split mold 91 and the outer peripheral surface of the core 95c forming the mold 9. As shown in FIG. Therefore, the third end surface 223 of the insulating layer 22 exposed from the opening edge 27 of the external semi-conductive layer 23 becomes the molding surface formed by the mold 9 . In other words, the third end surface 223 of the insulating layer 22 has no trace of abrasion caused by machining.

In the second embodiment, the hollow end 50 having the connection opening 25T in the first embodiment is configured by the third hollow end. However, the hollow end having the connection opening 25G shown in FIG. 50 may comprise a third hollow end. In this case, each of the hollow ends 50 having the connection opening 25G and the connection opening 25T may be composed of the third hollow end, or only one of them may be composed of the third hollow end. good too.

<Modification>
The invention is not limited to the embodiments described above. In the solid insulating bus 1 and connection structure 100 shown in FIGS. 1 and 3, it is possible to change the shapes of the GIS-side and Tr-side terminals 11G and 11T and conductor lead-out rods 3G and 3T. For example, the GIS-side end and the Tr-side end of the solid insulated bus 1 can be exchanged so that the terminal 11G is connected to the transformer and the terminal 11T is connected to the GIS. That is, the GIS side is a combination of the terminal 11T and the conductor lead-out rod 3T, and the transformer side is a combination of the terminal 11G and the conductor lead-out rod 3G. In this case, the terminal 11T of the solid insulated bus 1 is connected to the connection point 102 of the GIS via the conductor lead-out rod 3T, and the terminal 11G is connected to the connection point 102 of the transformer via the conductor lead-out rod 3G. , constitute the connecting structure 100 .

Reference Signs List 1 solid insulated busbar 10 conductor 11G, 11T terminal 11b base 11a tip 112 through hole 113 bolt 20 insulating molding 20G, 20T end 20M middle part 200 insertion hole 21 inner semiconductive layer 211 hole 22 insulating layer 221 first end surface 222 Second edge 223 Third end face 23 External semiconductive layer 230 Inner peripheral face 231 First end face 232 Second end face 233 Third end face 23eg, 23et End portion 23m Intermediate portion 25G, 25T Connection opening 26 Working opening 27 , 271, 272, 273 Opening edge 12 Gap 50 Hollow end 3G, 3T Conductor extraction rod 30 Insertion hole 4G, 4T Bushing 45 Flange 55, 56 Flange 6 Lid 7 Insulating plug 71, 72 Embedded electrode 8 Mounting flange 9 Gold Mold 90 Cavity 91 Split mold 92 Gap 93 Gate part 94 Overflow part 95a, 95b, 95c Core 96 Rod-shaped part 100 Connection structure of solid insulation busbar 101 Mating device 102 Connection point 104 Case T ₁₀ Thickness W ₁₀ Width

Claims (12)

An insulating molded body molded into a hollow shape,
a tubular inner semi-conductive layer;
an insulating layer provided on the outer periphery of the inner semi-conductive layer;
an outer semi-conductive layer provided around at least an end of the insulating layer;
a first hollow end having a first end face of the insulating layer and a first end face of the outer semi-conductive layer;
The first end surface of the insulating layer is a machined surface,
insulating molding. Having a second hollow end other than the first hollow end,
The second hollow end part connects the second end surface of the outer semi-conductive layer and the second edge of the insulating layer located on the inner peripheral surface of the outer semi-conductive layer without reaching the second end surface. The insulating molded body according to claim 1. Having a third hollow end other than the first hollow end,
the third hollow end portion has a third end face of the insulating layer and a third end face of the outer semi-conductive layer;
3. The insulating molded article according to claim 1, wherein the third end face of said insulating layer is a molded surface formed by a mold. all hollow ends other than the first hollow end are composed of at least one of a second hollow end and a third hollow end;
The second hollow end part connects the second end surface of the outer semi-conductive layer and the second edge of the insulating layer located on the inner peripheral surface of the outer semi-conductive layer without reaching the second end surface. have
the third hollow end portion has a third end face of the insulating layer and a third end face of the outer semi-conductive layer;
2. The insulating molded article according to claim 1, wherein the third end face of said insulating layer is a molding surface formed by a mold. 5. The insulating molded body according to claim 1, wherein said inner semi-conductive layer, said insulating layer and said outer semi-conductive layer are made of a rubber material. The insulating molded body has both end portions and an intermediate portion connecting the both end portions,
one of the two ends is hammerhead-shaped,
The hammerhead-shaped end has two openings that open in a direction that intersects with the inner semiconductive layer,
6. The hollow end portion having one of the two openings has a first end surface of the insulating layer and a first end surface of the outer semi-conductive layer. The insulating molded article described. 7. The insulating compact according to any one of claims 1 to 6, wherein said internal semi-conductive layer extends from one end of said insulating compact to the other end. 8. The insulating molded body according to claim 1, wherein the first end face of said insulating layer and the first end face of said outer semi-conductive layer are flush with each other. The insulating molded body according to any one of claims 1 to 8 ;
a conductor inserted with a gap in the inner semiconductive layer of the insulating molded body;
Solid insulated busbar. 10. The solid insulated busbar of claim 9 , wherein said conductor is formed of braided wire. a first step of forming a tubular inner semiconducting layer;
a second step of shaping the end of the hollow outer semiconducting layer with an open edge;
a third step of placing the inner semi-conductive layer and the edge of the outer semi-conductive layer in a mold;
a fourth step of inserting a core inside ends of the inner semi-conductive layer and the outer semi-conductive layer;
a fifth step of filling an insulating material in the mold to form an insulating layer that integrates the inner semiconductive layer and the end portion of the outer semiconductive layer;
The third step is performed so as to space the ends of the outer semiconductive layer at least near the outer periphery of both ends of the inner semiconductive layer,
The fourth step includes forming a gap between an outer peripheral surface of the core and an inner peripheral surface including the opening edge of the outer semiconductive layer,
In the fifth step, the insulating material is filled with the gap facing upward, and the insulating material overflows the gap.
A method for manufacturing an insulating molded body. a step of manufacturing an insulating molded body by the method for manufacturing an insulating molded body according to claim 11 ;
inserting a conductor into the inner semiconductive layer from one end side of the insulating molded body;
A method of manufacturing a solid insulated busbar.

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