JP7232882B2 - OLED display device manufacturing method, mask and mask design method - Google Patents

Description

The present disclosure relates to methods of manufacturing OLED displays, masks, and methods of designing masks.

An OLED (Organic Light-Emitting Diode) element is a current-driven self-luminous element, so it does not require a backlight, and has advantages such as low power consumption, a wide viewing angle, and a high contrast ratio. Expected in the development of flat panel displays.

There are two types of OLED displays. One is a color filter method in which three colors of R (Red), G (Green), and B (Blue) are produced by color filters based on a white OLED element. Another method is a separate coloring method in which three colors of RGB organic light-emitting materials are separately painted. The color filter method has the drawback that the color filter absorbs light, which reduces the light utilization rate and increases the power consumption. On the other hand, the separate coloring method is widely used because it is easy to widen the color gamut due to its high color purity and the light utilization rate is high because there is no color filter.

In the separate painting method, a thin plate-shaped metal mask (FMM: called Fine Metal Mask) is used in order to separately paint each color of the organic light-emitting material. An organic light-emitting material is deposited (deposited) through openings formed in the metal mask. Metal masks are easily deformed due to their structure, and are becoming more susceptible to deformation as they become thinner and larger as OLED display devices become more precise and have larger screens. is difficult.

US Pat. No. 6,200,000 discloses a suitable mask design method including the actual non-uniformity of a metal mask for an organic electroluminescent device in order to solve problems such as poor brightness and color mixture.

JP-A-2004-30975

The manufacture of the OLED display device of US Pat. No. 5,900,001 deposits an organic light-emitting material onto a substrate from a fixed deposition source. As a vapor deposition method for manufacturing an OLED display device, a method using a linear vapor deposition source (simply referred to as a linear source) in which a plurality of nozzles are arranged in one direction is known instead of a fixed vapor deposition source.

An OLED display manufacturing system uniaxially reciprocates a linear source to deposit organic light-emitting material on a substrate. Since vapor deposition using a linear source is completely different from vapor deposition using a fixed vapor deposition source, a mask design suitable for vapor deposition using a linear source and a vapor deposition technique using the mask are desired.

One aspect of the present embodiment is a method for manufacturing an OLED display device, in which an organic light-emitting material is applied to an electrode surface on a substrate through a mask while moving a linear source including a plurality of nozzles in a first direction. including depositing the The mask includes a plurality of holes formed in a surface facing the linear source. Each hole of the plurality of holes has a first opening, a second opening positioned between the first opening and the linear source and larger than the first opening, and between the first opening and the substrate. a third opening positioned and larger than the first opening. The substrate includes an insulating pixel definition layer and an insulating pillar spacer formed on the pixel definition layer facing the substrate side between the adjacent third openings. The side surface of the substrate and the top surface of the columnar spacer are arranged so as to be in contact with each other. distance SH from the first opening to the third opening, distance AD from the electrode surface to the top surface of the columnar spacer, maximum incident angle θM of the organic light-emitting material in the first direction, edge of the first opening to the adjacent sub-pixel electrode in the first direction, and the taper angle θT determined between the straight line connecting the edge of the first opening and the edge of the second opening and the first direction. θT<90−θM, SX>(SH+AD) tan(θM) is satisfied. A step angle θS determined between the straight line connecting the edge of the first opening and the edge of the third opening and the first direction satisfies θS<90−θM.

According to one aspect of the present invention, a mask suitable for use in the manufacture of OLED displays using linear sources can be provided.

A configuration example of an OLED display device 10 is schematically shown. A part of the cross-sectional structure of the OLED display device 10 is schematically shown. 1 schematically shows a configuration example of a metal mask module and a linear source used for vapor deposition of an organic light-emitting layer. 4 schematically shows a configuration example of a linear source; 4 schematically shows a configuration example of a metal mask. FIG. 4 shows a cross-sectional view of part of a mask pattern portion; 3 shows the relationship of the three openings viewed in the normal direction of the mask pattern. The same linear source at different positions is shown, and two nozzles are shown at different positions of the linear source, respectively. The same linear source at different positions is shown, and two nozzles are shown at different positions of the linear source, respectively. 4 schematically shows the relationship between a linear source, a mask pattern portion, and a mother substrate; 4 schematically shows the relationship between a linear source, a mask pattern portion, and a mother substrate; FIG. 4 shows a diagram for explaining a prescribed deviation ΔTp of opening pitches; FIG. 4 shows a diagram for explaining a prescribed deviation ΔCd of aperture size; FIG. 4 shows a diagram for explaining a prescribed deviation ΔAe of alignment.

Embodiments of the present invention will be described below with reference to the accompanying drawings. It should be noted that this embodiment is merely an example for realizing the present invention and does not limit the technical scope of the present invention. The same reference numerals are given to the common components in each figure.

[Configuration of display device]
The overall configuration of a display device 10 according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. In order to make the description easier to understand, the dimensions and shapes of the illustrated objects may be exaggerated.

FIG. 1 schematically shows a configuration example of an OLED (Organic Light-Emitting Diode) display device 10 according to this embodiment. The OLED display device 10 includes a TFT (Thin Film Transistor) substrate 100 on which light emitting elements are formed, a sealing substrate 200 that seals the OLED elements, and a bonding portion (glass substrate) that bonds the TFT substrate 100 and the sealing substrate 200 together. frit seal portion) 300. Dry air, for example, is enclosed between the TFT substrate 100 and the sealing substrate 200 and sealed by the joint portion 300 .

A scanning driver 131 , an emission driver 132 , and a driver IC 134 are arranged around the cathode electrode formation area 114 outside the display area 125 of the TFT substrate 100 . These are connected to external equipment via an FPC (Flexible Printed Circuit) 135 .

A scanning driver 131 drives the scanning lines of the TFT substrate 100 . Emission driver 132 drives the emission control line to control the light emission period of each sub-pixel. The driver IC 134 is mounted using, for example, an anisotropic conductive film (ACF).

The driver IC 134 supplies a power source and timing signals (control signals) to the scanning driver 131 and the emission driver 132, and also supplies a data voltage corresponding to video data to the data lines. That is, the driver IC 134 has a display control function.

Next, the detailed structure of the OLED display device 10 will be described. FIG. 2 schematically shows part of the cross-sectional structure of the OLED display device 10. As shown in FIG. The OLED display device 10 includes a TFT substrate 100 and a sealing substrate (transparent substrate) 200 facing the TFT substrate 100 . FIG. 2 schematically shows only a partial configuration of the TFT substrate 100. As shown in FIG. Moreover, in the following description, up and down indicate up and down in the drawings.

As shown in FIG. 2, the OLED display device 10 includes an insulating substrate 151 and a sealing structure facing the insulating substrate 151 . Here, one example of a sealing structure is a flexible or inflexible sealing substrate 200 . The encapsulation structure may be, for example, a thin film encapsulation (TFE) structure. The insulating substrate 151 can be regarded as the insulating substrate of FIG.

The OLED display device 10 includes a plurality of lower electrodes (eg, anode electrode 162), one upper electrode (eg, cathode electrode 166), and multiple and an organic light-emitting layer 165 . The cathode electrode 166 is a transparent electrode that transmits light from the organic light-emitting layer 165 toward the sealing structure.

Between one cathode electrode 166 and one anode electrode 162, one organic light-emitting layer 165 (also referred to as organic light-emitting film 165) is arranged. A plurality of anode electrodes 162 are arranged on the same plane (for example, on the planarization film 161), and one organic light-emitting layer 165 is arranged on one anode electrode 162. As shown in FIG.

The OLED display 10 has a plurality of Post Spacers (PS) 164 upstanding toward the encapsulation structure and a plurality of circuits each including a plurality of switches. Each of the multiple circuits is formed between the insulating substrate 151 and the anode electrode 162 and controls the current supplied to each of the multiple anode electrodes 162 .

FIG. 2 shows an example of a top-emission pixel structure. In the top emission type pixel structure, a cathode electrode 166 common to a plurality of pixels is arranged on the light emitting side (upper side in the drawing). The cathode electrode 166 has a shape that completely covers the entire surface of the display area 125 . The method for manufacturing an OLED display device of this embodiment can also be applied to an OLED display device having a bottom emission pixel structure. The bottom emission type pixel structure has a transparent anode electrode and a reflective cathode electrode, and emits light to the outside through the TFT substrate 100 .

The OLED display device 10 will be described in more detail below. The TFT substrate 100 includes sub-pixels (pixels) arranged in a display area and wiring formed in a wiring area around the display area. The wiring connects the pixel circuit and the control circuits (131, 132, 134) arranged in the wiring region.

A sub-pixel displays a color of either red, green, or blue. One pixel (main pixel) is composed of red, green, and blue sub-pixels. A sub-pixel includes a pixel circuit including an OLED element and a plurality of transistors. An OLED device includes an anode electrode as a lower electrode, an organic light-emitting layer, and a cathode electrode as an upper electrode. That is, multiple OLED elements are formed by one cathode electrode 166 , multiple anode electrodes 162 , and multiple organic light-emitting layers 165 .

The insulating substrate 151 is made of glass or resin, for example, and is an inflexible or flexible substrate. In the following description, the side closer to the insulating substrate 151 is referred to as the lower side, and the side farther from the insulating substrate 151 is referred to as the upper side. A gate electrode 157 is formed with a gate insulating film 156 interposed therebetween. An interlayer insulating film 158 is formed on the layer of gate electrode 157 .

A source electrode 159 and a drain electrode 160 are formed on the interlayer insulating film 158 in the display region 125 . The source electrode 159 and drain electrode 160 are made of, for example, a refractory metal or its alloy. The source electrode 159 and drain electrode 160 are connected to the channel portion 155 by contact portions 168 and 169 formed in contact holes in the interlayer insulating film 158 .

An insulating planarization film 161 is formed on the source electrode 159 and the drain electrode 160 . An anode electrode 162 is formed on an insulating planarization film 161 . The anode electrode 162 is connected to the drain electrode 160 through a contact portion formed in a contact hole in the planarizing film 161 . A pixel circuit (TFT) is formed below the anode electrode 162 .

An insulating pixel defining layer (PDL) 163 separating the OLED elements is formed on the anode electrode 162 . The OLED device is composed of (parts of) an anode electrode 162, an organic light-emitting layer 165, and a cathode electrode 166, which are stacked. OLED elements are formed in openings 167 in pixel defining layer 163 .

An insulating spacer 164 is formed on the surface of the pixel defining layer 163 between the two anode electrodes 162 . The top surface of the spacer 164 is positioned higher (closer to the encapsulation substrate 200) than the top surface of the pixel defining layer 163, and supports the encapsulation substrate 200 to seal the OLED element when the encapsulation substrate 200 is deformed. The distance from the stop substrate 200 is maintained.

An organic light emitting layer 165 is formed on the anode electrode 162 . The organic light emitting layer 165 adheres to the pixel defining layer 163 in and around the opening 167 of the pixel defining layer 163 . A cathode electrode 166 is formed on the organic light emitting layer 165 . Cathode electrode 166 is a transparent electrode. The cathode electrode 166 transmits all or part of visible light from the organic light-emitting layer 165 .

A stack of anode electrode 162, organic light emitting layer 165 and cathode electrode 166 formed in opening 167 of pixel defining layer 163 constitutes an OLED element. The cathode electrode 166 is common to the separately formed anode electrode 162 and the organic light emitting layer 165 (OLED element). A cap layer (not shown) may be formed on the cathode electrode 166 .

The sealing substrate 200 is a transparent insulating substrate such as a glass substrate. A λ/4 retardation plate 201 and a polarizing plate 202 are arranged on the light exit surface (front surface) of the sealing substrate 200 to suppress reflection of light incident from the outside.

[Production method]
An example of a method for manufacturing the OLED display device 10 will be described. As will be described later, the present disclosure features deposition of the organic light-emitting layer 165 . Other steps are optional if the deposition of the organic light-emitting layer 165 of the present embodiment is applicable. In the following description, elements formed in the same process (simultaneously) are elements in the same layer.

In manufacturing the OLED display device 10 , first, silicon nitride, for example, is deposited on an insulating substrate 151 by CVD (Chemical Vapor Deposition) or the like to form a first insulating film 152 . Next, a layer (polysilicon layer) including the channel portion 155 is formed using a known low-temperature polysilicon TFT manufacturing technique. For example, amorphous silicon can be deposited by CVD and crystallized by ELA (Excimer Laser Annealing) to form a polysilicon layer. The polysilicon layer is also used for connections between elements within the display area 125 .

Next, a gate insulating film 156 is formed by depositing, for example, a silicon oxide film on the polysilicon layer including the channel portion 155 by the CVD method or the like. Further, a metal material is deposited by a sputtering method or the like and patterned to form a metal layer including the gate electrode 157 .

In addition to the gate electrode 157, the metal layer includes, for example, storage capacitor electrodes, scanning lines, emission control lines, and power supply lines. As the metal layer, for example, one material selected from the group consisting of Mo, W, Nb, MoW, MoNb, Al, Nd, Ti, Cu, Cu alloys, Al alloys, Ag, Ag alloys to form a single layer, Alternatively, one layer selected from the group consisting of a two-layer structure or a multi-layer structure of more than two layers of low-resistance materials such as Mo, Cu, Al, or Ag may be formed to reduce wiring resistance.

Next, by using the gate electrode 157 as a mask, the channel portion 155 doped with high-concentration impurities before the formation of the gate electrode 157 is additionally doped with impurities to form a low-concentration impurity layer. lightly doped drain) structure. Next, an interlayer insulating film 158 is formed by depositing, for example, a silicon oxide film or the like by the CVD method or the like.

Anisotropic etching is performed on the interlayer insulating film 158 and the gate insulating film 156 to open a contact hole. Contact holes for contact portions 168 and 169 connecting the source electrode 159 and the drain electrode 160 to the channel portion 155 are formed in the interlayer insulating film 158 and the gate insulating film 156 .

Next, an aluminum alloy such as Ti/Al/Ti is deposited by sputtering or the like and patterned to form a metal layer. The metal layer includes a source electrode 159, a drain electrode 160 and contact portions 168,169. In addition, data lines, power supply lines, and the like are also formed.

Next, a photosensitive organic material is deposited to form a planarization film 161 . Contact holes for connecting to the source electrode 159 and the drain electrode 160 of the TFT are opened. An anode electrode 162 is formed on the planarization film 161 with the contact hole. The anode electrode 162 is a transparent film such as ITO, IZO, ZnO, In ₂ O ₃ , a reflective film of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound metal thereof. It contains three layers of transparent membranes. The three-layer structure of the anode electrode 162 is an example, and two layers may be used. Anode electrode 162 is connected to drain electrode 160 via a contact portion.

Next, for example, a photosensitive organic resin film is deposited by spin coating or the like, and patterning is performed to form the pixel definition layer 163 . Holes are formed in the pixel defining layer 163 by patterning, and the anode electrodes 162 of each sub-pixel are exposed at the bottom of the formed holes. The sides of the holes in the pixel defining layer 163 are forward tapered. A pixel defining layer 163 separates the light emitting area of each sub-pixel. Further, a photosensitive organic resin film, for example, is deposited by spin coating or the like and patterned to form spacers 164 on the pixel definition layer 163 .

Next, an organic light-emitting material is attached to the insulating substrate 151 on which the pixel definition layer 163 is formed to form an organic light-emitting layer 165 . An organic light-emitting material is deposited for each color of RGB to form an organic light-emitting layer 165 on the anode electrode 162 . A metal mask (MM) is used for film formation of the organic light emitting layer 165 .

A metal mask is prepared for each of the sub-pixel patterns of different colors. A metal mask is aligned and arranged on the surface of the TFT substrate 100 and fixed to the TFT substrate 100 . An organic light-emitting material is vapor-deposited on the TFT substrate 100 at positions corresponding to the sub-pixels through the openings of the metal mask. The details of the metal mask and vapor deposition using the metal mask will be described later.

The organic light-emitting layer 165 is composed of, for example, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer from the lower layer side. The organic light emitting layer 165 consists of electron transport layer/light emitting layer/hole transport layer, electron transport layer/light emitting layer/hole transport layer/hole injection layer, and electron injection layer/electron transport layer/light emitting layer/hole transport layer. , or a light-emitting layer alone. Other layers may be added, such as electron blocking layers. The material of the light-emitting layer differs depending on the color of the sub-pixel, and the film thickness of the hole injection layer, the hole transport layer, etc. is also controlled for each color if necessary.

Next, a metal material for the cathode electrode 166 is deposited on the TFT substrate 100 with the pixel defining layer 163, the spacers 164 and the organic light emitting layer 165 (at the opening of the pixel defining layer 163) exposed. A metal material is deposited on the pixel defining layer 163 , the spacers 164 and the organic light emitting layer 165 . The metal material deposited on the organic light-emitting layer 165 of one sub-pixel functions as the cathode electrode 166 of that sub-pixel.

The layer of the transparent cathode electrode 166 is formed, for example, by vapor deposition of Li, Ca, LiF/Ca, LiF/Al, Al, Mg, or alloys thereof. The film thickness of the cathode electrode 166 is optimized to improve the light extraction efficiency and ensure good viewing angle dependence. If the resistance of the cathode electrode 166 is high and the uniformity of light emission luminance is impaired, an auxiliary electrode layer is added with a material for forming a transparent electrode such as ITO, IZO, ZnO or In2O3. After forming the cathode electrode 166, an insulating film having a higher refractive index than glass may be deposited to form a cap layer in order to improve light extraction efficiency.

As described above, an OLED element corresponding to each of the RGB sub-pixels is formed, and the portions where the anode electrode 162 and the organic light-emitting layer 165 are in contact (within the opening of the pixel defining layer 163) are respectively formed into an R light-emitting region, a G light-emitting region, and a G light-emitting region. It becomes the B light emitting region.

Next, a glass frit is applied to the periphery of the TFT substrate 100, the sealing substrate 200 is placed thereon, and the glass frit portion is heated with a laser beam and melted to seal the TFT substrate 100 and the sealing substrate 200 together. do. After that, a λ/4 retardation plate 201 and a polarizing plate 202 are formed on the light emitting side of the sealing substrate 200 to complete the OLED display device 10 .

In the following, the details of the deposition of the organic light-emitting layer are described. The manufacturing system for the OLED display device 10 selectively deposits the organic light-emitting material using a metal mask. The manufacturing system sequentially aligns and sets metal masks having openings slightly larger than the light-emitting region on the TFT substrate 100, and selectively vapor-deposits organic light-emitting materials of each color. Current actually flows only through the opening of the pixel definition layer 163, and this portion becomes the light emitting region.

FIG. 3A schematically shows a configuration example of a metal mask module 500 and a linear source 400 used for vapor deposition of an organic light-emitting layer. The metal mask module 500 is used for vapor deposition of organic light-emitting materials on a mother substrate including panel portions of multiple OLED displays. Each OLED display panel is cut from the motherboard.

The metal mask module 500 includes a frame 501 and a plurality of strip-shaped metal masks 503 . For example, the frame 501 is rectangular and consists of four sides surrounding a central opening. The frame 501 is configured to have sufficient rigidity and small thermal deformation so as to support the metal mask 503 under tension with high accuracy. To reduce thermal deformation, the frame 501 is made of, for example, an Invar alloy. The shape and material of frame 501 may vary by design.

In FIG. 3A, each of the plurality of metal masks 503 is fixed to the frame 501 while being stretched in the longitudinal direction (X-axis direction). Each metal mask 503 is fixed to the frame 501 at fixing points 505 at four corners. Each metal mask 503 is fixed while being pulled in the longitudinal direction (X-axis direction) when fixed to the frame 501 . The tension suppresses deformation of the metal mask 503 . The metal mask 503 is made of nickel, nickel alloy, nickel-cobalt alloy, for example. The material of the metal mask 503 may vary according to design.

A plurality of metal masks 503, four metal masks 503 in FIG. 3A, are arranged in a direction (Y-axis direction) perpendicular to the pulling direction (X-axis direction). Note that the number of metal masks 503 is arbitrary, one or more.

Each metal mask 503 has a plurality of mask pattern portions 532 . In the example of FIG. 3A, each metal mask 503 has three mask pattern portions 532 arranged in the longitudinal direction (X-axis direction). One mask pattern portion 532 corresponds to one kind of sub-pixel pattern in one active area of one OLED display device 10 . Note that the number of mask pattern portions 532 in one metal mask 503 is 1 or more.

A linear source 400 has a plurality of nozzles 401 arranged in a row in the longitudinal direction (X-axis direction). The linear source 400 reciprocates over the metal mask module 500 in a direction (Y-axis direction) perpendicular to the direction in which the nozzles 401 are arranged to deposit an organic light-emitting material on the mother substrate.

The moving direction (Y-axis direction) of the linear source 400 is perpendicular to the pulling direction (X-axis direction) of the metal mask 503 . Alignment of the metal mask 503 has a large error in the tensile direction (X-axis direction) and is more accurate in the direction perpendicular thereto (Y-axis direction). Therefore, the linear source moves in the direction (Y-axis direction) perpendicular to the pulling direction. All mask pattern portions 532 of each metal mask 503 are positioned between the nozzles 401 at both ends in the X-axis direction. By moving the linear source 400 in the Y-axis direction, the organic light-emitting material is vapor-deposited on the mother substrate through all the mask pattern portions 532 .

FIG. 3B schematically shows a configuration example of the linear source 400. As shown in FIG. The X-axis direction and the Y-axis direction in FIG. 3B are the same as in FIG. 3A. The linear source 400 comprises a plurality of nozzles 401 , a body portion 403 and two walls 405 . In FIG. 3B only one nozzle is indicated at 401 and only one wall is indicated at 405 .

The main body part 403 has a space inside to accommodate an organic light-emitting material. The linear source 400 is heated, and the organic light-emitting material contained in the main body 403 is vaporized and ejected from the nozzles 401 toward the metal mask module 500 .

A plurality of nozzles 401 are arranged in a row on the surface of the main body 403 in the longitudinal direction (X-axis direction). A plurality of nozzles 401 are arranged at predetermined intervals. The arrangement pitch of the nozzles 401 may be constant or variable.

During vapor deposition while the linear source 400 is moving, the plurality of nozzles 401 (the nozzles thereof) and the surface on which they are arranged face the metal mask module 500 . A plurality of nozzles 401 protrude toward the metal mask module 500 . Each nozzle 401 (the ejection port thereof) is oriented at a predetermined angle with respect to the normal direction of the metal mask 503 in the movement direction (Y-axis direction) of the linear source 400 .

At least some of the nozzles 401 have angles different from each other in the movement direction (Y-axis direction) of the linear source 400 . Some nozzles 401 may be tilted in one Y-axis direction and some nozzles 401 may be tilted in the other Y-axis direction. In the example of FIG. 3A, some nozzles 401 may be slanted upward on the paper surface and some nozzles 401 may be slanted downward on the paper surface.

The direction of some nozzles 401 may match the normal direction of the metal mask 503 . There may be no nozzles 401 tilted in one of the two Y-axis directions. The direction of all the nozzles 401 may match the normal direction of the metal mask 503 in the X-axis direction, or a plurality of nozzles 401 may have different directions in the X-axis direction.

The two walls 405 are arranged so as to sandwich the arranged nozzles 401 in the movement direction (Y-axis direction) of the linear source 400 . Each wall 405 rises from the main body 403 toward the metal mask module 500 and extends in the X-axis direction. In the example of Figure 3B, the two walls 405 are parallel and their heights match. The shape and size of the two walls 405 can vary depending on the design. The orientation of the nozzle 401 and the height of the wall 405 are designed so that the organic light-emitting material is evenly deposited in the plane under uniform pressure.

The direction of each nozzle 401 and the height of the wall 405 define the incident angle of the organic light-emitting material ejected from each nozzle 401 onto the metal mask 503 and the mother substrate. Each wall 405 defines the upper limit of the ejection angle of the organic light-emitting material in the Y-axis direction, that is, the upper limit of the angle of incidence on the metal mask 503 and the mother substrate. The details of the incident angle of the organic light-emitting material will be described later.

FIG. 3C schematically shows a configuration example of the metal mask 503. As shown in FIG. The X-axis direction and the Y-axis direction in FIG. 3C are the same as in FIG. 3A. The metal mask 503 has a substantially rectangular outer shape and is fixed to the frame 501 by being pulled in the longitudinal direction (X-axis direction). The metal mask 503 includes a substrate body portion 531 and a plurality of mask pattern portions 532 arranged in the longitudinal direction (X-axis direction). In the example of FIG. 3C, three mask pattern portions 532 are formed.

The mask pattern portion 532 is an opening pattern and corresponds to one active area of the OLED display device 10 . The mask pattern portion 532 corresponds to the R, G or B sub-pixel pattern in this active area. The mask pattern portion 532 is composed of openings arranged corresponding to the pixel array and shielding portions between the openings. Each opening corresponds to each sub-pixel, and the organic light-emitting material passing through the openings is deposited on the anode electrode 162 of the corresponding sub-pixel.

The metal mask 503 further includes a plurality of dummy pattern portions 533 and a plurality of half-etched portions 534 . In FIG. 3C, only two of the six dummy pattern portions are indicated at 533 by way of example. Three pairs of dummy pattern portions 533 are formed so as to sandwich the mask pattern portion 532 in the Y-axis direction.

In FIG. 3C, only two of the four half-etches are indicated at 534 by way of example. The half-etched portions 534 are formed so as to sandwich the mask pattern portion 532 in the X-axis direction. Two half-etched portions 534 are formed on one side and two other half-etched portions 534 are formed on the other side. The dummy pattern portion 533 and the half-etched portion 534 are formed so that the metal mask 503 is uniformly stretched against tension. The presence/absence, number, position and shape of the dummy pattern portion 533 and the half-etched portion 534 are arbitrary depending on the design.

Area 537 shows an enlarged view of a portion of mask pattern portion 532 . First openings 541 (hereinafter also referred to as openings 541) are formed in a regular arrangement corresponding to the sub-pixel array. The anode electrode 162 of the sub-pixel is exposed through the opening 541 . The organic light emitting material passes through opening 541 and adheres to anode electrode 162 . As described below, in this embodiment, the size and pitch of the openings 541 in the moving direction (Y-axis direction) of the linear source 400 are important.

In this example, the length of the opening 541 in the linear source moving direction (Y-axis direction) is referred to as opening width HW. A shielding portion between openings 541 adjacent in the linear source movement direction (Y-axis direction) is referred to as a bridge. The length of the bridge in the direction of linear source movement (Y-axis direction) is referred to as bridge width BW. The bridge width BW is the distance between the closest edges of the openings 541 adjacent in the linear source movement direction (Y-axis direction). In one mask pattern portion 532 of this example, the opening width HW of the opening 541 is the same, and the bridge width BW of the bridge is common.

Note that the metal mask 503 of the present disclosure can be applied to various pixel arrangements such as stripe arrangement, mosaic arrangement, and pental arrangement. The shape of the opening 541 is determined by design, and may be rectangular or non-rectangular.

FIG. 4A shows a cross-sectional view of a portion of mask pattern portion 532 . In FIG. 4A , a mother substrate (not shown) is placed above the mask pattern portion 532 and the linear source 400 passes below the mask pattern portion 532 . As described with reference to FIG. 3C, the mask pattern portion 532 has a plurality of openings 541 arranged according to the sub-pixel arrangement. Below, the aperture 541 is also referred to as a reference aperture. As will be described below, in this embodiment the reference aperture 541 defines the deposition area of the organic light emitting material of the sub-pixel.

Each reference opening 541 is a boundary between a linear source side hole (space) 545 and a motherboard side hole (space) 546 (also referred to as a second hole 546). The linear source side hole 545 is formed from the linear source side surface 538 of the mask pattern portion 532 by wet etching, for example. The linear source side hole 545 has a second opening 543 on the linear source side, that is, on the opposite side of the reference opening 541 . The second opening 543 is also referred to as a linear source side opening 543 below. Linear source side opening 543 coincides with linear source side 538 . The linear source side surface 538 is the surface facing the linear source 400 .

The mother-board-side hole 546 is formed from the mother-board side surface 539 of the mask pattern portion 532 by wet etching, for example. The mother substrate side surface 539 is a surface facing the mother substrate to be vapor-deposited. The motherboard-side hole 546 has a third opening 547 on the motherboard side, that is, on the side opposite to the reference opening 541 . In the following, the third opening 547 is also referred to as the motherboard side opening 547 . The motherboard-side opening 547 coincides with the motherboard side surface 539 .

Wall surfaces of the linear source side hole 545 and the mother board side hole 546 are concave inclined surfaces. The width of the linear source side hole 545 in the linear source movement direction (Y-axis direction) decreases from the linear source side opening 543 toward the reference opening 541 . The width of the mother-board-side hole 546 in the linear source movement direction (Y-axis direction) decreases from the mother-board-side opening 547 toward the reference opening 541 .

By forming the linear source side hole 545 and the mother board side hole 546 from both sides of the mask pattern portion 532, the reference opening 541 of a desired size can be created with high accuracy.

As described with reference to FIG. 3C, the aperture width HW of the reference aperture 541 is defined in the linear source movement direction (Y-axis direction). Also, a bridge width BW is defined between adjacent edges of the reference opening 541 .

FIG. 4B shows the relationship of the three openings 541, 543 and 547 viewed in the normal direction of the mask pattern portion 532. FIG. The reference opening 541 is smaller than and contained in the linear source side opening 543 and the motherboard side opening 547 . In this example, the linear source side opening 543 is the largest, but the motherboard side opening 547 may be the largest. The mother-board-side opening 547 may be omitted, and the reference opening 541 may be formed on the same plane as the mother-board side surface 539 (at the position of the mother-board-side opening 547).

5 and 6 are first and second diagrams schematically showing the relationship between the moving linear source 400, the mask pattern portion 532, and the mother substrate. 5 and 6 show cross sections including the Y-axis direction perpendicular to the longitudinal direction (X-axis direction) of the linear source 400. FIG. 5 and FIG. 7 described later, it is assumed that the anode electrode 162 and the anode electrodes 162R1 and 162L1 adjacent to the anode electrode 162 are anode electrodes included in sub-pixels of the same color.

In FIG. 6 and FIG. 8 described later, it is assumed that the anode electrode 162 and the anode electrodes 162R2 and 162L2 adjacent to the anode electrode 162 are anode electrodes of sub-pixels of different colors. 6 and 8, for example, when the anode electrode 162 is the anode electrode included in the blue sub-pixel, the anode electrodes 162R2 and 162L2 are the anode electrodes included in the red sub-pixel.

In addition, for example, when the anode electrode 162 is the anode electrode included in the blue sub-pixel, the anode electrodes 162R2 and 162L2 are the anode electrodes included in the red and green sub-pixels, respectively. Hereinafter, the mask of this embodiment will be described in detail mainly with reference to FIGS. 5 and 6. FIG.

The mask pattern portion 532 (mask 503) is in contact with the mother substrate. Note that the mother substrate includes an anode electrode and a pixel definition layer that insulates the anode electrode. More specifically, the motherboard side surface 539 contacts the top surface of the spacer 164 . The surface of the anode electrode 162 is exposed through the opening of the pixel definition layer 163 . The surface of the anode electrode 162 and the pixel defining layer 163 around the anode electrode 162 are exposed through the reference opening 541 . On the surface of the anode electrode 162 and on the pixel defining layer 163 around the anode electrode 162 is deposited the organic light emitting material of the first color, ie the organic light emitting material of the sub-pixel containing the anode electrode 162 .

In FIG. 6, since the color of the sub-pixel including the anode electrodes 162R2 and 162L2 is different from the color of the sub-pixel including the anode electrode 162, the surfaces of the anode electrodes 162R2 and 162L2 are not exposed and the sub-pixel including the anode electrode 162 is not exposed. Avoid adhesion of organic light-emitting materials.

5 and 6 show the same linear source 400 in different positions, and also show nozzles 401A and 401B, respectively, in linear source 400 in different positions. In FIGS. 5 and 6, the leftward Y-axis direction is referred to as the YA direction, and the rightward Y-axis direction is referred to as the YB direction. Each nozzle 401 of the linear source 400 has a predetermined tilt angle in the linear source moving direction (Y-axis direction).

The nozzle 401A has the largest tilt angle in the YA direction in the linear source 400 . The organic light-emitting material ejected from the nozzle 401A flies toward the mask pattern portion 532 and the mother substrate at a predetermined divergence angle. The incident angle of the organic light-emitting material ejected from the nozzle 401A onto the mother substrate is θ1M in the YA direction and θ2 in the YB direction. The incident angle to the mother substrate is the angle between the normal line of the vapor deposition surface (principal surface) of the mother substrate and the incident direction of the organic light-emitting material. In this example, the angle of incidence on the mask pattern portion 532 matches the angle of incidence on the mother substrate.

The incident angle θ1M is the maximum incident angle of the linear source 400 in the YA direction. In this example, the incident angle θ1M is defined by wall 405 . In a configuration without wall 405, incident angle θ1M is defined by the tilt angle of nozzle 401A. Linear source 400 may include a plurality of nozzles that eject organic light emitting material at an incident angle θ1M.

Nozzle 401B has the largest tilt angle in the YB direction in linear source 400 . The organic light-emitting material ejected from the nozzle 401B flies toward the mask pattern portion 532 and the mother substrate at a predetermined divergence angle. The incident angle of the organic light-emitting material ejected from the nozzle 401B onto the mother substrate is θ1 in the YA direction and θ2M in the YB direction.

The incident angle θ2M is the maximum incident angle of the linear source 400 in the YB direction. In this example, the incident angle θ 2 M is defined by wall 405 . In a configuration without wall 405, incident angle θ2M is defined by the tilt angle of nozzle 401B. Linear source 400 may include multiple nozzles that eject organic light emitting material at an incident angle of θ2M.

A step height SH is defined in the mask pattern portion 532 . The step height SH is the distance in the normal direction between the reference opening 541 and the motherboard side opening 547 and corresponds to the depth of the motherboard side hole 546 .

A taper angle θT and a step angle θS are defined in the mask pattern portion 532 . 5 and 6 show the taper angle θT and the step angle θS at positions different from the linear source side hole 545 and the mother board side hole 546 indicated by the reference numerals. Similar angles are defined at linear source side holes 545 and motherboard side holes 546 shown in FIG.

A taper angle θT indicates the taper angle of the linear source side hole 545 . The taper angle θT is the angle (acute angle) between the line connecting the edge of the linear source side opening 543 and the edge of the reference opening 541 and the Y-axis direction.

A step angle θS indicates a taper angle of the motherboard side hole 546 . The step angle θS is an angle (acute angle) between a line connecting the edge of the mother board side opening 547 and the edge of the reference opening 541 and the Y-axis direction.

An anode depth AD is defined between the mask pattern portion 532 and the anode electrode 162 . The anode depth AD is the distance in the normal direction between the surface (vapor deposition surface) of the anode electrode 162 and the mother substrate side surface 539 of the mask pattern portion 532 . The distance (D1) in the normal direction between the surface of the anode electrode 162 and the reference opening 541 is the sum of the anode depth AD and the step height SH.

In the example of FIG. 5, the linear source side hole 545 and the motherboard side hole 546 are symmetrical. Therefore, the values of the left and right taper angles θT of the linear source side hole 545 are the same. Also, the values of the step angles θS on the left and right sides of the motherboard side hole 546 are the same. Further, the central positions of the anode electrode 162, the mother substrate side opening 547, the reference opening 541, and the linear source side opening 543 are located on one mother substrate normal line. The shapes of the anode electrode 162 and the pixel defining layer 163 exposed in the reference opening 541 are symmetrical.

The distances S1L, S1R and the distances S2L, S2R for the regions of the mother substrate where the organic light emitting material adheres are determined from the incident angle of the organic light emitting material and the shape of the mask pattern portion 532 . Distances S1L and S2L are distances to the left of the reference opening 541 in FIG. Distances S1R and S2R are distances on the right side of the reference opening 541 in FIG.

The distances S1L and S1R are the distances in the Y-axis direction between the edge of the reference opening 541 and the edge of the area on the anode electrode 162 where the organic material is uniformly deposited. The distances S2L and S2R are the distances in the Y-axis direction between the edge of the reference opening 541 and the edge of the region where the organic light-emitting material passing through the reference opening 541 may adhere. The area where the organic light emitting material can adhere is determined based on the deposition surface of the anode electrode 162 .

The distance S1L on the left side is determined by the organic luminescent material ejected from the nozzle 401B tilted to the right. On the right side of the position indicated by the distance S1L, the organic light emitting material ejected from the moving nozzle 401B adheres to the anode electrode 162 at all angles. As will be described later, in this example, the deposition area of the organic light emitting material is determined by the reference opening 541 . The organic light-emitting material deposition position immediately before the organic light-emitting material incident from the nozzle 401B is completely blocked by the left edge of the reference opening 541 defines the distance S1L.

Specifically, the distance S1L is represented by the following formula (1).
S1L=(SH+AD)×tan(θ2M) (1)

The right distance S1R is determined by the organic luminescent material ejected from the nozzle 401A tilted to the left. On the left side of the position indicated by the distance S1R, the organic light-emitting material at all angles incident from the moving nozzle 401A adheres to the anode electrode 162. FIG. The organic light emitting material adhesion position immediately before the organic light emitting material ejected from the nozzle 401A is completely blocked by the right edge of the reference opening 541 defines the distance S1R.

Specifically, the distance S1R is represented by the following formula (2).
S1R=(SH+AD)×tan(θ1M) (2)

The left distance S2L is determined by the organic luminescent material ejected from the nozzle 401A tilted to the left. The position indicated by the distance S2L is the edge of the region where the organic light-emitting material that has passed through the reference opening 541 from the nozzle 401A adheres. The organic light-emitting material deposition position just before the organic light-emitting material incident at the angle θ1M from the nozzle 401A is blocked by the left edge of the reference opening 541 defines the distance S2L.

Specifically, the distance S2L is represented by the following formula (3).
S2L=(SH+AD)×tan(θ1M) (3)

The right distance S2R is determined by the organic luminescent material ejected from the nozzle 401B tilted to the right. The position indicated by the distance S2R is the edge of the region where the organic light-emitting material that has passed through the reference opening 541 from the nozzle 401B adheres. The organic light-emitting material deposition position immediately before the organic light-emitting material incident at the angle θ2M from the nozzle 401B is blocked by the right edge of the reference opening 541 defines the distance S2R.

Specifically, the distance S2L is represented by the following formula (4).
S2R=(SH+AD)×tan(θ2M) (4)

As shown by the above formulas (1) to (4), S1L=S2R and S2L=S1R are established. When the maximum incident angle θ1M in the YA direction and the maximum incident angle θ2M in the YB direction are the same, S1L=S1R=S2R=S2R.

The conditions that the above numerical values of the metal mask 503 (mask pattern portion 532) should satisfy will be described below. Vapor deposition of organic light-emitting materials requires highly accurate deposition position control. Therefore, it is important that the deposition area of the organic light emitting material on the mother substrate is controlled by the reference opening 541 without being affected by the linear source side opening 543 and the mother substrate side opening 547 of the mask pattern portion 532 . By creating the reference opening 541 with high precision, the deposition area of the organic light-emitting material can be controlled with high precision.

Since the deposition area of the organic light emitting material is controlled only by the reference opening 541, the taper angle θT and the step angle θS must satisfy a predetermined relationship with the maximum incident angles θ1M and θ2M of the organic light emitting material.

Specifically, the taper angle θT must satisfy the following formulas (5) and (6).
θT<90−θ1M (5)
θT<90−θ2M (6)

By satisfying equations (5) and (6), the distances S1L, S2L, S1R, and S2R can be independent values from the taper angle θT. Here, formulas (5) and (6) are synonymous with formula (7).
θT<90-max(θ1M, θ2M) (7)
max(θ1M, θ2M) is the larger value of θ1M and θ2M.

When the formula (7) is satisfied, the organic light-emitting material from the moving linear source 400 first passes through the linear source side opening 543 and then is blocked by the blocking portion (bridge) without passing through the reference opening 541. be. Thereafter, as the linear source 400 moves further, the organic light emitting material will pass through the reference opening 541 . This phenomenon is the same for movement in the YA direction and movement in the YB direction.

In particular, the distance S1L or the distance S1R is defined by the linear source side aperture 543 if equation (7) is not satisfied. By satisfying the formula (7), the uniform deposition area on the anode electrode 162 can be defined with high accuracy by the reference opening 541 .

The step angle θS must satisfy the following formulas (8) and (9).
θS<90−θ1M (8)
θS<90−θ2M (9)

By satisfying equations (8) and (9), the distances S1L, S2L, S1R, and S2R can be independent values from the step angle θS. Here, formulas (8) and (9) are synonymous with formula (10).
θS<90-max (θ1M, θ2M) (10)

When the formula (10) is satisfied, all the organic light-emitting materials that have passed through the reference opening 541 pass through the motherboard-side opening 547 . The organic light-emitting material is not blocked by the edge of the motherboard-side opening 547 .

In particular, the distance S2L or the distance S2R is defined by the motherboard-side opening 547 when the formula (10) is not satisfied. By satisfying Expression (10), the deposition region edge can be defined with high precision by the reference opening 541 .

OLED display design requires that the distances S1L, S2L, S1R, and S2R fall within specified ranges in a manufactured OLED display. Specifically, allowable maximum values S1LM, S2LM, S1RM, and S2RM are defined for the distances S1L, S2L, S1R, and S2R, respectively.

For example, S1LM and S1RM are distances in the Y-axis direction from the edge of the reference opening 541 to the edge of the exposed surface of the anode electrode 162 . S2LM and S2RM are the distances in the Y-axis direction from the edge of the reference aperture 541 to the edge of the exposed surface of the adjacent subpixel electrodes adjacent to the anode electrode 162 (eg, the anode electrodes 162L2 and 162R2).

The allowable maximum value S1M achieves the required emission characteristics of each sub-pixel. The maximum allowable value S2M prevents the organic light-emitting material of a particular sub-pixel from encroaching on adjacent sub-pixels and causing color mixing.

From the above point of view, it is required that the following formulas (11) to (14) hold.
S1LM>S1L=(SH+AD)×tan(θ2M) (11)
S1RM>S1R=(SH+AD)×tan(θ1M) (12)
S2LM>S2L=(SH+AD)×tan(θ1M) (13)
S2RM>S2R=(SH+AD)×tan(θ2M) (14)

Let max(S1LM, S1RM) be S1M, max(S2LM, S2RM) be S2M, and max(θ1M, θ2M) be θM. Equations (11) and (12) are represented by Equation (15) below, and Equations (13) and (14) are represented by Equation (16) below.
S1M(SY)>(SH+AD)×tan(θM) (15)
S2M(SX)>(SH+AD)×tan(θM) (16)

By satisfying equation (16), for example in FIG. 6, the organic light-emitting material of the first color of the first sub-pixel including the anode electrode 162 is included in the second sub-pixel adjacent to the first sub-pixel. Deposition on the adjacent anode electrode (eg, anode electrode 162L2) can be prevented. As a result, the occurrence of color mix can be suppressed. Note that the second sub-pixel is a sub-pixel of the second color, and the organic light-emitting material of the second color is deposited on the adjacent anode electrode without depositing the organic light-emitting material of the first color. is preferred.

The vapor deposition step of the organic light-emitting material, which is one of the manufacturing processes of the OLED display device 10, is performed under conditions that satisfy Equations (5) and (6). Furthermore, the deposition step is performed under conditions that satisfy equations (11) to (14), or equations (15) and (16). In some designs, equations (11) and (12) (equation 15) may not be included in the manufacturing conditions when the uniformity of the organic light-emitting film on the anode electrode 162 is less demanding.

Similarly, metal mask 503 has (is manufactured to) a structure that satisfies equations (5) and (6). Further, the metal mask 503 has (is manufactured to) a structure that satisfies equations (11) to (14), or equations (15) and (16). For metal mask 503, S1LM, S1RM, S2LM, S2RM, AD, θ1M, and θ2M are given values.

The step angle θS of the metal mask 503 satisfies equations (5) and (6), and the step height SH satisfies equations (15) and (16). Moreover, the metal mask 503 is manufactured so that the metal mask 503 satisfies these conditions. As described above, the condition of Equation (15) may be omitted depending on the design.

7 and 8 schematically show the relationship between the linear source 400, the mask pattern section 532, and the mother substrate. 7 and 8 show cross sections including the X-axis direction perpendicular to the movement direction (Y-axis direction) of the linear source 400, and correspond to FIGS. 5 and 6, respectively.

The taper angle θT and the step angle θS may be different from or the same as the values in the Y-axis direction shown in FIG. The same applies to the distances S1L, S1R, S2L, and S2R. Regarding the X-axis direction, the smaller the taper angle θT, the less the organic light-emitting material that is blocked. However, since the direction of ejection from the nozzle 401 has a predetermined distribution angle centered on the vertical direction, it is not necessary to make the taper angle θT smaller than necessary.

As shown in FIGS. 7 and 8, a plurality of nozzles 401 are arranged in the X-axis direction. From the viewpoint of vapor deposition of the organic light emitting material for one sub-pixel, the arrangement area of the nozzle 401 is divided into a plurality of sections by the taper angle.

Specifically, the nozzle arrangement area is divided into one uniform deposition range 601 , two partial deposition ranges 603 , and two non-deposition ranges 605 . The uniform vapor deposition range 601 is sandwiched between two partial vapor deposition ranges 603 , and the two partial vapor deposition ranges 603 are sandwiched between two non-depositable ranges 605 .

All of the organic light-emitting material ejected from the nozzle 401 in the uniform deposition area 601 adheres to the areas where uniform deposition is desired on the substrate. Only a portion of the organic light-emitting material ejected from the nozzle 401 in the partial deposition area 603 adheres to the area where uniform deposition is required on the substrate. The organic light emitting material ejected from the nozzle 401 in the non-evaporation area 605 does not adhere to the area where uniform evaporation is required on the substrate.

A design and manufacturing method that considers manufacturing errors will be described below. For example, it is difficult to always manufacture the metal mask 503, assemble the metal mask module 500, and align the metal mask module 500 and the mother substrate without error.

Therefore, in the design of the metal mask 503 and the vapor deposition process using the metal mask 503, a process margin for manufacturing the OLED display device 10 is defined in advance. By designing and manufacturing in consideration of process margins, the organic light-emitting material can be vapor-deposited through the metal mask 503 on a desired region on the mother substrate more reliably.

Variations to be considered in the metal mask 503 are aperture pitch variation, aperture size variation, and alignment variation. By designing the manufacturing system of the metal mask 503 and the OLED display device 10 in consideration of the total variation including all of these, the organic light-emitting material can be vapor-deposited through the metal mask 503 on the desired area on the mother substrate more reliably. can do.

In designing the metal mask 503, a prescribed deviation ΔTp of the aperture pitch, a prescribed deviation ΔCd of the aperture size, and a prescribed deviation ΔAe of the alignment are determined in advance. In the metal mask design, the metal mask 503 is designed so as to satisfy predetermined conditions including the total deviation of these deviations.

FIG. 9A shows a diagram for explaining the specified deviation ΔTp of the opening pitch. The prescribed deviation ΔTp of the opening pitch indicates the deviation (design value) of the actual value with respect to the design value of the opening pitch in the metal mask module 500 . There are a specified deviation ΔTpx of the aperture pitch in the X-axis direction and a specified deviation ΔTpy of the aperture pitch in the Y-axis direction. In this embodiment, the mask is designed in consideration of the specified deviation ΔTpy of the opening pitch in the Y-axis direction.

FIG. 9B shows a diagram for explaining the specified deviation ΔCd of the aperture size. The prescribed deviation ΔTp of the aperture size indicates the deviation (design value) of the actual value from the design value of the aperture size in the metal mask module 500 . There are a specified deviation ΔCdx of the aperture size in the X-axis direction and a specified deviation ΔCdy of the aperture size in the Y-axis direction. In this embodiment, the mask is designed in consideration of the specified deviation ΔCdy of the aperture size in the Y-axis direction.

FIG. 9C shows a diagram for explaining the prescribed alignment deviation ΔAe. The specified deviation ΔAe of alignment indicates the deviation (design value) of the actual value from the design value in the positioning of the mask pattern portion 532 with respect to the mother substrate. There is an alignment deviation ΔAex in the X-axis direction and an alignment deviation ΔAey in the Y-axis direction. In this embodiment, the mask is designed in consideration of the alignment deviation ΔAey in the Y-axis direction.

In the metal mask design, the metal mask 503 is designed so as to satisfy the following Equations 17 to 20 or Equations 21 and 22 in addition to Equations (7) and (10).

S1LM>S1L=(SH+AD)×tan(θ2M)
+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2 (17)
S1RM>S1R=(SH+AD)×tan(θ1M)
+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2 (18)
S2LM>S2L=(SH+AD)×tan(θ1M)
+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2 (19)
S2RM>S2R=(SH+AD)×tan(θ2M)
+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2 (20)

S1M>(SH+AD)×tan(θM)
+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2 (21)
S2M>(SH+AD)×tan(θM)
+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2 (22)

Here, numerical values other than the step height SH are given values in the metal mask design. In manufacturing the OLED display device 10, the metal mask 503 designed according to the above conditions is used to vapor-deposit the organic light-emitting material on the mother substrate.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. A person skilled in the art can easily change, add, and convert each element of the above embodiments within the scope of the present invention. A part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment.

In addition to the features recited in the claims, a summary of features of the disclosure is provided below.
(1)
A method for manufacturing an OLED display device, comprising:
Depositing an organic light emitting material on an electrode surface on a substrate through a mask while moving a linear source including a plurality of nozzles in a first direction;
the mask includes a plurality of holes formed in a surface facing the linear source;
each hole of the plurality of holes includes a first opening and a second opening positioned between the first opening and the linear source and larger than the first opening;
Distance D1 from the first opening to the electrode surface
maximum incident angle θM of the organic light-emitting material in the first direction
Distance SX from the edge of the first opening to the adjacent sub-pixel electrode in the first direction
a taper angle θT determined between a straight line connecting the edge of the first opening and the edge of the second opening and the first direction;
As
θT<90−θM
SX>D1tan(θM)
is fulfilled, the manufacturing method.
(2)
(1) The production method according to
the mask includes a plurality of second holes on a surface opposite to the surface facing the linear source, the plurality of second holes overlapping each of the plurality of holes;
each of the plurality of second holes includes a third opening located between the first opening and the substrate and larger than the first opening;
A step angle θS determined between a straight line connecting the edge of the first opening and the edge of the third opening and the first direction is
θS<90−θM
A manufacturing method that satisfies
(3)
(1) or (2), the production method according to
The distance SY from the edge of the first opening to the electrode surface exposed from the first opening is
SY>D1tan(θM)
A manufacturing method that satisfies
(4)
(1), (2) or (3), the production method according to
Stipulated deviation ΔTp of opening pitch
Aperture size regulation deviation ΔCd
Alignment deviation ΔAe
is defined and
SX>D1tan(θM)+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2
A manufacturing method that satisfies
(5)
(4) The manufacturing method according to
SY>D1tan(θM)+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2
A manufacturing method that satisfies
(6)
(1) The production method according to
The organic light emitting material is a first color organic light emitting material,
The manufacturing method, wherein the adjacent sub-pixel electrodes are vapor-deposited with a second color organic light-emitting material.
(7)
A mask disposed between a linear source including a plurality of nozzles and moving in a first direction and an electrode surface on a substrate and used in vapor deposition of an organic light-emitting material on the electrode surface,
including a plurality of holes formed in a surface facing the linear source;
each hole of the plurality of holes includes a first opening and a second opening positioned between the first opening and the linear source and larger than the first opening;
Distance D1 from the first opening to the electrode surface
maximum incident angle θM of the organic light-emitting material in the first direction
Distance SX from the edge of the first opening to the adjacent sub-pixel electrode in the first direction
a taper angle θT determined between a straight line connecting the edge of the first opening and the edge of the second opening and the first direction;
As
θT<90−θM
SX>D1tan(θM)
Meet the mask.
(8)
(7) The mask according to
including a plurality of second holes overlapping each of the plurality of holes on the surface opposite to the surface facing the linear source;
each of the plurality of second holes includes a third opening located between the first opening and the substrate and larger than the first opening;
A step angle θS determined between a straight line connecting the edge of the first opening and the edge of the third opening and the first direction is
θS<90−θM
Meet the mask.
(9)
The mask according to (7) or (8),
The distance SY from the edge of the first opening to the surface exposed from the first opening is
SY>D1tan(θM)
Meet the mask.
(10)
The mask according to (7), (8) or (9),
A specified deviation ΔTp of the pitch of the first openings
A specified deviation ΔCd of the size of the first opening
Alignment deviation ΔAe
is defined and
SX>D1tan(θM)+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2
Meet the mask.
(11)
(10) The mask according to
SY>D1tan(θM)+(ΔTp ² +ΔCd ² +ΔAe ² ) ^1/2
Meet the mask.
(12)
A method for designing a mask disposed between a linear source including a plurality of nozzles and moving in a first direction and an electrode surface on a substrate and used in vapor deposition of an organic light-emitting material on the electrode surface, comprising:
the mask includes a plurality of holes formed in a surface facing the linear source;
each hole of the plurality of holes includes a first opening and a second opening positioned between the first opening and the linear source and larger than the first opening;
The design method is
maximum incident angle θM of the organic light-emitting material in the first direction
a distance SX in the first direction from the edge of the first aperture to an adjacent sub-pixel
Predefine the value of
a distance D1 from the first opening to the electrode surface;
A taper angle θT determined between a straight line connecting the edge of the first opening and the edge of the second opening and the first direction,
θT<90−θM
SX>D1tan(θM)
A design method that determines that is satisfied.
(13)
(12) The design method according to
predefining a value of a specified distance SY from the edge of the first opening to the electrode surface exposed from the first opening;
The distance D1 from the first opening to the electrode surface is
SY>D1 tan θM
A design method that determines that is satisfied.

OLED 10 display device 100 TFT substrate 111 insulating substrate 114 cathode electrode forming region 125 display region 131 scanning driver 132 emission driver 151 insulating substrate 152 first insulating film 155 channel section 156 gate insulating film 157 Gate electrode 158 Interlayer insulating film 159 Source electrode 160 Drain electrode 161 Planarization film 162 Anode electrode 163 Pixel defining layer 164 Spacer 165 Organic light emitting layer 166 Cathode electrode 168 Contact portion 200 Sealing substrate , 201 retardation plate, 202 polarizing plate, 400 linear source, 401 nozzle, 403 body portion, 405 wall, 503 metal mask, 532 mask pattern portion, 538 linear source side surface, 539 mother substrate side surface, 541 reference opening, 543 linear source side opening, 546 mother board side hole, 545 linear source side hole, 547 mother board side opening, HW opening width of reference opening, θT taper angle, θS step angle

Claims (11)

A method for manufacturing an OLED display device, comprising:
Depositing an organic light emitting material on an electrode surface on a substrate through a mask while moving a linear source including a plurality of nozzles in a first direction;
the mask includes a plurality of holes formed in a surface facing the linear source;
each hole of the plurality of holes,
a first opening;
a second opening positioned between the first opening and the linear source and larger than the first opening;
a third opening positioned between the first opening and the substrate and larger than the first opening;
the substrate includes an insulating pixel definition layer and an insulating columnar spacer formed on the pixel definition layer facing the substrate- side surface of the mask between the adjacent third openings;
the substrate- side surface of the mask and the top surface of the columnar spacer are arranged so as to be in contact with each other;
Distance SH from the first opening to the third opening
Distance AD from the electrode surface to the top surface of the columnar spacer
maximum incident angle θM of the organic light-emitting material in the first direction
Distance SX from the edge of the first opening to the adjacent sub-pixel electrode in the first direction
a taper angle θT determined between a straight line connecting the edge of the first opening and the edge of the second opening and the first direction;
As
θT<90−θM
SX > (SH + AD) tan (θM)
is filled and
A step angle θS determined between a straight line connecting the edge of the first opening and the edge of the third opening and the first direction is
θS<90−θM
A manufacturing method that satisfies The manufacturing method according to claim 1,
The distance SY from the edge of the first opening to the electrode surface exposed from the first opening is
SY > (SH + AD) tan (θM)
A manufacturing method that satisfies The manufacturing method according to claim 1 or 2,
Stipulated deviation ΔTp of opening pitch
Aperture size regulation deviation ΔCd
Alignment deviation ΔAe
is defined and
SX > (SH + AD) tan (θM) + (ΔTp2 + ΔCd2 + ΔAe2) 1/2
A manufacturing method that satisfies The manufacturing method according to claim 3,
SY > (SH + AD) tan (θM) + (ΔTp2 + ΔCd2 + ΔAe2) 1/2
A manufacturing method that satisfies The manufacturing method according to claim 1,
The organic light emitting material is a first color organic light emitting material,
The manufacturing method, wherein the adjacent sub-pixel electrodes are vapor-deposited with a second color organic light-emitting material. A mask disposed between a linear source including a plurality of nozzles and moving in a first direction and an electrode surface on a substrate and used in vapor deposition of an organic light-emitting material on the electrode surface,
including a plurality of holes formed in a surface facing the linear source;
each hole of the plurality of holes,
a first opening;
a second opening positioned between the first opening and the linear source and larger than the first opening;
a third opening positioned between the first opening and the substrate and larger than the first opening;
including
the substrate includes an insulating pixel definition layer and an insulating columnar spacer formed on the pixel definition layer facing the substrate- side surface of the mask between the adjacent third openings;
In the vapor deposition, the surface of the mask on the substrate side and the top surface of the columnar spacer are arranged so as to be in contact with each other,
Distance SH from the first opening to the third opening
Distance AD from the electrode surface to the top surface of the columnar spacer
maximum incident angle θM of the organic light-emitting material in the first direction
Distance SX from the edge of the first opening to the adjacent sub-pixel electrode in the first direction
a taper angle θT determined between a straight line connecting the edge of the first opening and the edge of the second opening and the first direction;
As
θT<90−θM
SX > (SH + AD) tan (θM)
is filled and
A step angle θS determined between a straight line connecting the edge of the first opening and the edge of the third opening and the first direction is
θS<90−θM
Meet the mask. A mask according to claim 6,
The distance SY from the edge of the first opening to the surface exposed from the first opening is
SY > (SH + AD) tan (θM)
Meet the mask. The mask according to claim 6 or 7,
A specified deviation ΔTp of the pitch of the first openings
A specified deviation ΔCd of the size of the first opening
Alignment deviation ΔAe
is defined and
SX > (SH + AD) tan (θM) + (ΔTp2 + ΔCd2 + ΔAe2) 1/2
Meet the mask. A mask according to claim 8,
SY > (SH + AD) tan (θM) + (ΔTp2 + ΔCd2 + ΔAe2) 1/2
Meet the mask. A method for designing a mask disposed between a linear source including a plurality of nozzles and moving in a first direction and an electrode surface on a substrate and used in vapor deposition of an organic light-emitting material on the electrode surface, comprising:
the mask includes a plurality of holes formed in a surface facing the linear source;
each hole of the plurality of holes,
a first opening;
a second opening positioned between the first opening and the linear source and larger than the first opening;
a third opening positioned between the first opening and the substrate and larger than the first opening;
including
the substrate includes an insulating pixel definition layer and an insulating columnar spacer formed on the pixel definition layer facing the substrate- side surface of the mask between the adjacent third openings;
the mask is arranged such that the substrate- side surface of the mask and the top surface of the columnar spacer are in contact with each other;
The design method is
maximum incident angle θM of the organic light-emitting material in the first direction
a distance SX in the first direction from the edge of the first aperture to an adjacent sub-pixel
Predefine the value of
a distance SH from the first opening to the third opening;
a distance AD from the electrode surface to the top surface of the columnar spacer;
a taper angle θT determined between a straight line connecting the edge of the first opening and the edge of the second opening and the first direction;
A step angle θS determined between a straight line connecting the edge of the first opening and the edge of the third opening and the first direction,
θT<90−θM
SX > (SH + AD) tan (θM)
θS<90−θM
A design method that determines that is satisfied. The design method according to claim 10,
predefining a value of a specified distance SY from the edge of the first opening to the electrode surface exposed from the first opening;
a distance SH from the first opening to the third opening and a distance AD from the electrode surface to the top surface of the columnar spacer,
SY > (SH + AD) tan (θM)
A design method that determines that is satisfied.

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